JPH03126055U - - Google Patents

Info

Publication number
JPH03126055U
JPH03126055U JP1990034352U JP3435290U JPH03126055U JP H03126055 U JPH03126055 U JP H03126055U JP 1990034352 U JP1990034352 U JP 1990034352U JP 3435290 U JP3435290 U JP 3435290U JP H03126055 U JPH03126055 U JP H03126055U
Authority
JP
Japan
Prior art keywords
power module
power
phenolic resin
epoxy resin
overcoated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1990034352U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1990034352U priority Critical patent/JPH03126055U/ja
Publication of JPH03126055U publication Critical patent/JPH03126055U/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本考案によるパワーモジユールの一実
施例の要部断面図であり、第２図は従来の実施例
の要部断面図である。 図中、１……金属基板、２……電力用トランジ
スタ、３……電力用ダイオード、４……フエノー
ル系樹脂、５……エポキシ樹脂のオーバコート、
６……シリコーンゲル、７……エポキシ樹脂、８
……リード線である。 FIG. 1 is a sectional view of a main part of an embodiment of a power module according to the present invention, and FIG. 2 is a sectional view of a main part of a conventional embodiment. In the figure, 1... Metal substrate, 2... Power transistor, 3... Power diode, 4... Phenol resin, 5... Epoxy resin overcoat,
6...Silicone gel, 7...Epoxy resin, 8
...This is a lead wire.

Claims (1)

【実用新案登録請求の範囲】 (1) 同一基板上に実装された電力用トランジス
タと電力用ダイオードをフエノール系樹脂でコー
テイングすることを特徴とするパワーモジユール
。 (2) 上記フエノール系樹脂でコーテイングした
上にエポキシ樹脂にてオーバコートを行うことを
特徴とする請求項(1)記載のパワーモジユール。[Scope of Claim for Utility Model Registration] (1) A power module characterized by coating a power transistor and a power diode mounted on the same substrate with a phenolic resin. (2) The power module according to claim (1), wherein the power module is coated with the phenolic resin and then overcoated with an epoxy resin.
JP1990034352U 1990-03-30 1990-03-30 Pending JPH03126055U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1990034352U JPH03126055U (en) 1990-03-30 1990-03-30

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1990034352U JPH03126055U (en) 1990-03-30 1990-03-30

Publications (1)

Publication Number Publication Date
JPH03126055U true JPH03126055U (en) 1991-12-19

Family

ID=31538749

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1990034352U Pending JPH03126055U (en) 1990-03-30 1990-03-30

Country Status (1)

Country Link
JP (1) JPH03126055U (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011086896A1 (en) * 2010-01-15 2011-07-21 三菱電機株式会社 Power semiconductor module
JP2012043875A (en) * 2010-08-17 2012-03-01 Mitsubishi Electric Corp Power semiconductor device
WO2013008424A1 (en) * 2011-07-11 2013-01-17 三菱電機株式会社 Power semiconductor module

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011086896A1 (en) * 2010-01-15 2011-07-21 三菱電機株式会社 Power semiconductor module
CN102687270A (en) * 2010-01-15 2012-09-19 三菱电机株式会社 Power semiconductor module
JPWO2011086896A1 (en) * 2010-01-15 2013-05-16 三菱電機株式会社 Power semiconductor module
EP2525404A4 (en) * 2010-01-15 2014-01-01 Mitsubishi Electric Corp SEMICONDUCTOR POWER MODULE
CN109166833A (en) * 2010-01-15 2019-01-08 三菱电机株式会社 Semiconductor module for electric power
JP2012043875A (en) * 2010-08-17 2012-03-01 Mitsubishi Electric Corp Power semiconductor device
WO2013008424A1 (en) * 2011-07-11 2013-01-17 三菱電機株式会社 Power semiconductor module
CN103650137A (en) * 2011-07-11 2014-03-19 三菱电机株式会社 Power semiconductor module
JPWO2013008424A1 (en) * 2011-07-11 2015-02-23 三菱電機株式会社 Power semiconductor module
EP2733743A4 (en) * 2011-07-11 2015-03-18 Mitsubishi Electric Corp POWER SEMICONDUCTOR MODULE
JP2016167635A (en) * 2011-07-11 2016-09-15 三菱電機株式会社 Semiconductor module for electric power

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