JPH03139824A - 半導体薄膜の堆積方法 - Google Patents

半導体薄膜の堆積方法

Info

Publication number
JPH03139824A
JPH03139824A JP27793889A JP27793889A JPH03139824A JP H03139824 A JPH03139824 A JP H03139824A JP 27793889 A JP27793889 A JP 27793889A JP 27793889 A JP27793889 A JP 27793889A JP H03139824 A JPH03139824 A JP H03139824A
Authority
JP
Japan
Prior art keywords
hydrogen
thin film
substrate
film
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP27793889A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0587171B2 (mo
Inventor
Yutaka Hayashi
豊 林
Mitsuyuki Yamanaka
光之 山中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP27793889A priority Critical patent/JPH03139824A/ja
Publication of JPH03139824A publication Critical patent/JPH03139824A/ja
Priority to US07/800,711 priority patent/US5214002A/en
Publication of JPH0587171B2 publication Critical patent/JPH0587171B2/ja
Granted legal-status Critical Current

Links

JP27793889A 1989-10-25 1989-10-25 半導体薄膜の堆積方法 Granted JPH03139824A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP27793889A JPH03139824A (ja) 1989-10-25 1989-10-25 半導体薄膜の堆積方法
US07/800,711 US5214002A (en) 1989-10-25 1991-12-03 Process for depositing a thermal CVD film of Si or Ge using a hydrogen post-treatment step and an optional hydrogen pre-treatment step

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27793889A JPH03139824A (ja) 1989-10-25 1989-10-25 半導体薄膜の堆積方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP09125182A Division JP3084395B2 (ja) 1997-05-15 1997-05-15 半導体薄膜の堆積方法

Publications (2)

Publication Number Publication Date
JPH03139824A true JPH03139824A (ja) 1991-06-14
JPH0587171B2 JPH0587171B2 (mo) 1993-12-15

Family

ID=17590376

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27793889A Granted JPH03139824A (ja) 1989-10-25 1989-10-25 半導体薄膜の堆積方法

Country Status (1)

Country Link
JP (1) JPH03139824A (mo)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993010555A1 (fr) * 1991-11-14 1993-05-27 Kanegafuchi Chemical Industry Co., Ltd. Couche mince en silicium polycristallin et son procede de formation a basse temperature
JPH0897159A (ja) * 1994-09-29 1996-04-12 Handotai Process Kenkyusho:Kk エピタキシャル成長方法および成長装置
US5624873A (en) * 1993-11-12 1997-04-29 The Penn State Research Foundation Enhanced crystallization of amorphous films
KR20000048288A (ko) * 1998-12-22 2000-07-25 마찌다 가쯔히꼬 결정성실리콘계 반도체박막의 제조방법
US6773762B1 (en) 1997-11-20 2004-08-10 Tokyo Electron Limited Plasma treatment method

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002080244A2 (en) 2001-02-12 2002-10-10 Asm America, Inc. Improved process for deposition of semiconductor films
US7186630B2 (en) 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6118122A (ja) * 1984-07-04 1986-01-27 Hitachi Ltd 半導体製造装置
JPS6126774A (ja) * 1984-07-16 1986-02-06 Canon Inc 非晶質シリコン膜形成装置
JPS61151092A (ja) * 1984-12-24 1986-07-09 Hitachi Ltd 薄膜形成方法及び薄膜形成装置
JPS62213118A (ja) * 1986-03-13 1987-09-19 Nec Corp 薄膜形成方法およびその装置
JPH01238112A (ja) * 1988-03-18 1989-09-22 Sanyo Electric Co Ltd 半導体処理方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6118122A (ja) * 1984-07-04 1986-01-27 Hitachi Ltd 半導体製造装置
JPS6126774A (ja) * 1984-07-16 1986-02-06 Canon Inc 非晶質シリコン膜形成装置
JPS61151092A (ja) * 1984-12-24 1986-07-09 Hitachi Ltd 薄膜形成方法及び薄膜形成装置
JPS62213118A (ja) * 1986-03-13 1987-09-19 Nec Corp 薄膜形成方法およびその装置
JPH01238112A (ja) * 1988-03-18 1989-09-22 Sanyo Electric Co Ltd 半導体処理方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993010555A1 (fr) * 1991-11-14 1993-05-27 Kanegafuchi Chemical Industry Co., Ltd. Couche mince en silicium polycristallin et son procede de formation a basse temperature
US5387542A (en) * 1991-11-14 1995-02-07 Kanegafuchi Chemical Industry Co., Ltd. Polycrystalline silicon thin film and low temperature fabrication method thereof
US5624873A (en) * 1993-11-12 1997-04-29 The Penn State Research Foundation Enhanced crystallization of amorphous films
JPH0897159A (ja) * 1994-09-29 1996-04-12 Handotai Process Kenkyusho:Kk エピタキシャル成長方法および成長装置
US5769942A (en) * 1994-09-29 1998-06-23 Semiconductor Process Laboratory Co. Method for epitaxial growth
US6110290A (en) * 1994-09-29 2000-08-29 Semiconductor Process Laboratory Co. Method for epitaxial growth and apparatus for epitaxial growth
US6773762B1 (en) 1997-11-20 2004-08-10 Tokyo Electron Limited Plasma treatment method
KR20000048288A (ko) * 1998-12-22 2000-07-25 마찌다 가쯔히꼬 결정성실리콘계 반도체박막의 제조방법

Also Published As

Publication number Publication date
JPH0587171B2 (mo) 1993-12-15

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Legal Events

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