JPH03145178A - Semiconductor light emitting device and manufacture thereof - Google Patents

Abstract

PURPOSE:To provide a P and an N electrode on one side of a semiconductor light emitting device so as to realize the mounting of the device without wire bonding by a method wherein a first region provided with a first electrode is provided to a multilayered laminar structure and a step is provided to a part of the region, a second region provided with an insulating film is provided onto the electrode and a part of the step, and a third region provided with a second electrode is provided onto the insulating film and the part of the step not covered with the insulating film. CONSTITUTION:A stripe-like multilayered laminar structure 7 is provided onto a semiconductor substrate 1, and an electrode 2 is provided onto the whole outermost face of the structure 7 or all over a first, a second, and a third region. The electrode 2 is exposed in the first region, and the electrode 2 and the side face of the structure 7 are covered with an insulating film 4 in the second and the third region. An electrode 5 is provided onto the insulating film 4 in the third region and comes into contact with the surface of the substrate 1 exposed at both the sides of the structure 7. The electrodes 2 and 5 are electrically insulated from each other through the insulating film 4, and a potential is applied between the electrodes 2 and 5, whereby a device of this design is made to function as a semiconductor light emitting device.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor light emitting device characterized by having two positive and negative current injection electrodes on the same side, and a method for manufacturing the same.

[Conventional technology]

In a conventional semiconductor light emitting device, current is injected using electrodes formed on the back side of the substrate and on the surface of a semiconductor layer epitaxially grown on the front surface of the substrate. Semiconductor light emitting devices that perform planar current injection have also been announced (for example, Electror+tc Letters,
24.1282 (1988>).

[Problem to be solved by the invention]

In a normal semiconductor light emitting device, electrode formation involves forming an electrode on the surface of an epitaxial growth layer by vapor deposition, polishing the back surface of the substrate to a predetermined thickness, and then forming another electrode on the back surface of the substrate. It takes. Furthermore, when mounting a semiconductor light emitting device, it is necessary to perform wiring using wire bonding, which may pose a problem in terms of reliability.

In a planar injection type semiconductor light emitting device, for example, like a TJS laser, it is necessary to create a p-type region and an n-type region on the same plane, which requires a process such as diffusion.

Also, because the distance between the p-electrode and the n-electrode is close, when fusing them to a heat sink or stem, it is possible to complete the wiring by simply fusing each electrode to the heat sink or stem without wire bonding. could not.

The purpose of the present invention is to eliminate such conventional drawbacks and provide a structure of a semiconductor light emitting device that has p and n electrodes on one side and can be mounted without wire bonding, and an element isolation trench. This paper provides a simple manufacturing method using the following methods.

[Means to solve the problem]

The present invention has two aspects, one of which is, in a semiconductor light emitting device having a striped multilayer fit layer structure including an active layer, a first region having a first electrode in the multilayer stacked structure;
a second region having a step reaching the substrate in a part of the region, having a first electrode on the multilayer stacked structure, and having an insulating film on the electrode and a part of the step; The present invention is a semiconductor light emitting device characterized by comprising a third region having a second electrode on an insulating film and on a step not covered with an insulating film.

The other step is to form a multilayer stacked structure on a semiconductor substrate, form a first electrode on this multilayer stacked structure, and perform etching that reaches the substrate to make the multilayer N-layer structure into a stripe shape. , depositing an insulating film thereon;
A step of removing the insulating film on both sides of the substrate surface of the striped multilayer stacked structure, a step of forming a second electrode thereon, and a step of removing the second electrode in a part of the region to expose the insulating film. This manufacturing method is characterized by comprising at least the steps of: and removing a part of the exposed insulating film to expose the first electrode.

[Effect]

By employing the structure of the present invention, the surface of the semiconductor light emitting device can be freely divided into a PT electrode and an N electrode insulating part, which increases the degree of freedom in using the device. For example, it is possible to implement mounting that does not require wire bonding. It is possible. Furthermore, it has a simple structure that does not require polishing of the substrate portion and does not require precise control techniques such as diffusion. In another invention, by using the manufacturing method of the invention, the above semiconductor light emitting device can be manufactured by simple processes and steps.

〔Example〕

In the embodiment, a semiconductor laser will be described as an example of a semiconductor light emitting device.

FIG. 1(a) shows a perspective view of an embodiment of the semiconductor laser according to the present invention, and FIG. 1(b) to (d> show FIG. 1(a).
AA', BB', CC' cross-sectional views are shown.

This semiconductor laser includes a striped multilayer structure 7 on a semiconductor substrate 1, including an active layer (not shown) that participates in light emission, and the entire uppermost layer of the multilayer structure 7, that is, the first
An electrode 2 is provided over a region 1, a second region, and a third region. In the first region, the electrode 2 is exposed as shown in FIGS. 1(a) and (b), but in the second region. As can be seen from Fig. 1 (a), (c) and (d), the third region is
The top of the electrode 2 and the side surface of the multilayer stacked structure 7 are covered with an insulating film 4. The third region has an electrode 5 on top of the insulating film 4.
There is.

The electrode 5 has a multilayer laminated structure 7, as shown in FIG. 1(d).
is in contact with the exposed substrate surface on both sides.

Electric f! 2 and electrode 5 are electrically insulated by an insulating film 4, electrode 2 is an electrode on the epitaxially grown layer surface of the multilayer N structure, and electrode 5 is an electrode on the substrate side. By applying a potential difference between electrode 2 and electrode 5, it functions as a semiconductor light emitting device.

To mount the semiconductor laser shown in FIG. 1, the semiconductor laser is fused to a heat sink 10 as shown in FIG. In this case, the electrode side should be in contact with the heat sink. Further, the insulating region 13 of the heat sink 10 is prevented from coming into contact with any region other than the insulating film 4'. Further, the welded metal is prevented from crossing the insulating region 13 during fusion and shorting the p-side current injection region 12 and the n-side current injection region 11.

In this way, the semiconductor laser can be driven without wire bonding. The insulating film 4 is made of AJ20, which has good thermal conductivity. By using the above, it is possible to prevent the temperature of the semiconductor laser from rising.

The manufacturing method will be described in detail below with reference to FIG. Ga 0.5In□, 5 on n-type GaAs substrate 1
After growing an n-GaAs current blocking layer on the (Afflo, 6Gag, 4) pull heterostructure with P as the active layer, p-GaAs is grown by current using photolithography.
A multilayer stack structure 7 is formed by growing an s cap layer. Next, a TiPtAu1i electrode 2 is deposited on the multilayer stacked structure by sputtering. Thereafter, a resist 3 is applied onto the electrode 2 (FIG. 3(a)). Using photolithography, the resist is removed from the area except for the vicinity of the current injection area (FIG. 3(b)). Using RIE as a mask, the electrode 2 and the multilayer stacked structure are etched down to the substrate 1 to form grooves 8, and the multilayer stacked structure is shaped into stripes (FIG. 3(C)). After removing the resist, an A, 12203 insulating film 4 is deposited by electron beam evaporation (FIG. 3(d)).

After removing the insulating film 4 at the bottom of the trench by photolithography (
(Fig. 3(e)), AuGeNi electrode 5 is deposited as an n-electrode (Fig. 3(f)).Next, using photolithography, a portion of the AuGeNi electrode 5 is removed by RIE to expose the insulating film. do. The region where this AuGeNi electrode 5 remains becomes the third region shown in FIG. 1(a). After that, using photolithography in the same way, the electrode 5
The electrode 2 is exposed by etching a portion of the insulating film 4 in the area where the insulating film is exposed after the removal of the insulating film. The area where this electrode 2 is exposed becomes the first area shown in FIG.
The region where the insulating film is exposed becomes the second region. In this way, two electrodes that are insulated from each other can be formed on the same surface.

〔Effect of the invention〕

As described above, according to the present invention, a structure in which two electrodes are located on the same side can be realized without controlling impurities such as diffusion or changing the crystal growth method. This allows assembly without wire bonding. Further, according to the method of the present invention, a planar injection type semiconductor light emitting device can be manufactured without significantly increasing the number of steps.

[Brief explanation of the drawing]

FIG. 1 is a diagram schematically showing the semiconductor light emitting device of the present invention, and FIG.
The figure shows a semiconductor light emitting device of the present invention fused to a heat sink, and FIG. 3 is a schematic diagram showing the manufacturing process of the present invention. In the figure, 1 is a substrate, 2 and 5 are electrodes, 4 is an insulating film, and 7 is a multilayer stacked structure.

Claims (2)

[Claims] (1) A striped multilayer structure including an active layer that participates in light emission is provided on a semiconductor substrate, a first electrode is provided on the surface of the multilayer structure, and the first electrode is insulated except for a part of the structure. further covering a part of the region covered with the insulating film with a second electrode, and covering a first region where the first electrode is exposed and adjacent to the first region. A semiconductor light emitting device comprising: a second region where the insulating film is exposed; and a third region adjacent to the second region and covered with the second electrode. (2) forming a multilayer stacked structure including an active layer that participates in light emission on a semiconductor substrate, further forming a first electrode on the surface of the multilayer stacked structure, and adding the first electrode and the multilayer stacked structure, a step of etching to a depth that reaches the substrate to form a striped multilayer stacked structure, a step of depositing an insulating film, and a step of removing the insulating film deposited on the substrate on both sides of the striped multilayer stacked structure; a step of forming a second electrode; a step of removing a part of the second electrode to expose an insulating film; and a step of removing a part of the insulating film exposed by removing the second electrode. A method for manufacturing a semiconductor light emitting device, comprising at least the step of exposing the first electrode.