JPH03148152A - Testing method for semiconductor element - Google Patents

Testing method for semiconductor element

Info

Publication number
JPH03148152A
JPH03148152A JP28692789A JP28692789A JPH03148152A JP H03148152 A JPH03148152 A JP H03148152A JP 28692789 A JP28692789 A JP 28692789A JP 28692789 A JP28692789 A JP 28692789A JP H03148152 A JPH03148152 A JP H03148152A
Authority
JP
Japan
Prior art keywords
test
derivative
product
resistance
program
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP28692789A
Other languages
Japanese (ja)
Inventor
Masanori Tomioka
昌則 冨岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP28692789A priority Critical patent/JPH03148152A/en
Publication of JPH03148152A publication Critical patent/JPH03148152A/en
Pending legal-status Critical Current

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To unify test programs into one per product by performing the resistance measurement for derivative decision at the outset of a test so as to decide the derivative on the program. CONSTITUTION:An original film resistance R2 for deciding the kind of a derivative is made on a substrate 1, and in execution of a test program, at first the decision resistance of a product set in a tester is measured. Next, it is decided what kind of derivative the read resistance valve correspond to, and the test is executed as soon as the standard value of the derivative is incorporated in a test program, and shifting to the next product, the test is executed similarly. Hereby, there is no necessity of preparing programs according to derivatives, and the test programs can be collected into one each per product.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はハイブリッドIOのテスト方法に関する0 〔従来の技術〕 派生品のあるハイブリッドICではそれぞれの派生品に
対し副番がつけられてかっ、基板上に印刷された副番に
よって区別されているoしかし、この多くの異なる種類
の派生品のある製品もテスト装置は同一のものを使用し
、派生品ごと別々に用意されたテストプログラムによっ
てそれぞれテストを行なっていた。
[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a test method for hybrid IO. Products with many different types of derivatives are differentiated by subnumbers printed on the circuit board. However, the same test equipment is used for the products with many different types of derivatives, and each derivative is tested by a separate test program. I was doing a test.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

従来の半導体素子のテスト方法は以上のように構成され
ていたので、1つの製品について多くの派生品がある場
合テストに際しても1つの製品に対して多くのテストプ
ログラムを用意しなければならず、大変手間がかかり作
業上もミスの可能性が高いという問題点があった。
Conventional semiconductor device testing methods have been configured as described above, so if one product has many derivatives, many test programs must be prepared for that one product. The problem was that it was very time consuming and there was a high possibility of making mistakes.

本発明は上記のような問題点に鑑みて為されたもので、
テストプログラムを1つの製品につき1つに統一するこ
とができる半導体素子のテスト方法を得ることを目的と
する。
The present invention was made in view of the above-mentioned problems.
An object of the present invention is to obtain a semiconductor device testing method that can unify test programs to one for each product.

〔課題を解決するためのチ段〕[Steps to solve the problem]

本発明に係る半導体素子のテスト方法は、派生品の判定
を行うために、それぞれの派生品ごとに製品の時性とは
全く関係のないある値の抵抗が設けられていることに着
目して、テストの始めに咬すその抵抗を測定し、それに
よって派生品の種類を判定するようにしたものである。
The semiconductor device testing method according to the present invention focuses on the fact that each derivative product is provided with a resistance of a certain value that is completely unrelated to the timeliness of the product, in order to determine whether it is a derivative product. , the resistance to biting is measured at the beginning of the test, and the type of derivative product can be determined based on this.

〔作用〕[Effect]

本発明に訃ける半導体素子のテスト方法は、派生品判定
のための抵抗測定をテストの始めに行うことによって、
プログラム上で派生品の判定をすることにな9、プログ
ラムを派生品別に用意する必要がなく、テストプログラ
ムを製品につきそれぞれ1つに會とめられる。
The method for testing semiconductor devices according to the present invention includes measuring resistance to determine derivative products at the beginning of the test.
There is no need to prepare a program for each derivative product to determine whether it is a derivative product on the program, and one test program can be created for each product.

〔実施例〕〔Example〕

以下、この発明の一実施例を図を用いて説明する。第2
図は本発明で使用されるハイブリッドICの説明図で、
その基板(1) ):に派生品の種類を判定するための
厚膜抵抗R(2)が形成されている。第1図は本発明の
一実施例であるテストプログラムの70−チャートであ
る。第1図において、例えばステップ11にかいてこの
テストプログラムを実行すると、まず最初にテスターに
セットされた製品の判定抵抗の測定を実行する(ステッ
プ12 )。
An embodiment of the present invention will be described below with reference to the drawings. Second
The figure is an explanatory diagram of the hybrid IC used in the present invention.
A thick film resistor R(2) for determining the type of derivative product is formed on the substrate (1). FIG. 1 is a 70-chart of a test program that is an embodiment of the present invention. In FIG. 1, when this test program is executed in step 11, for example, the determination resistance of the product set in the tester is first measured (step 12).

次に、読み取った抵抗値が派生品のどの種類に相当する
か判定する(ステップ13 )。それからその派生品の
規格値をテストプログラムに組み込む(ステップ14)
。以上の動作が終わbしだい直ちにテストを実行する(
ステップ15 )。次の製品に移りてはじめからテスト
を実行する。
Next, it is determined which type of derivative product the read resistance value corresponds to (step 13). Then incorporate the specification values of the derivative into the test program (step 14)
. As soon as the above operations are completed, run the test (
Step 15). Move on to the next product and run the test from the beginning.

〔発明の効果〕〔Effect of the invention〕

以上のように本発明によれば、派生品すべてに対してテ
ストプログラムを用意する必要がなく、1種類の製品に
対し1種類のテストプログラムしかないので、テストプ
ログラムの管理が容易で、また、テストに関しても間違
ったテストプログラムを使用するというようなミスは少
なくな、ちという効果がある。
As described above, according to the present invention, there is no need to prepare test programs for all derivative products, and there is only one type of test program for one type of product, so test programs can be easily managed. When it comes to testing, there are fewer mistakes such as using the wrong test program.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施列を示すテストプログラムの7
0−チャート、第2図は本発明でテストを行うハイブリ
ッドエ0の説明図である。 図にかいて、(1〉はハイブリッドエ0の厚膜基板、(
2)は派生品の識別用の厚膜抵抗を示す。
FIG. 1 shows 7 of a test program showing one implementation sequence of the present invention.
0-Chart, FIG. 2 is an explanatory diagram of Hybrid E 0 tested in the present invention. In the figure, (1> is a thick film substrate of Hybrid E0, (
2) shows a thick film resistor for identification of derivative products.

Claims (1)

【特許請求の範囲】[Claims]  ハイブリッドICが使用目的にあうように複数の派生
品がつくられている派生品のテスト時に派生品の種類を
判定する厚膜抵抗測定によつて判別することを特徴とす
る半導体素子のテスト方法。
A method for testing a semiconductor device, characterized in that when a hybrid IC is tested for a derivative product in which a plurality of derivative products are made to meet the purpose of use, the type of the derivative product is determined by thick film resistance measurement.
JP28692789A 1989-11-02 1989-11-02 Testing method for semiconductor element Pending JPH03148152A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28692789A JPH03148152A (en) 1989-11-02 1989-11-02 Testing method for semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28692789A JPH03148152A (en) 1989-11-02 1989-11-02 Testing method for semiconductor element

Publications (1)

Publication Number Publication Date
JPH03148152A true JPH03148152A (en) 1991-06-24

Family

ID=17710762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28692789A Pending JPH03148152A (en) 1989-11-02 1989-11-02 Testing method for semiconductor element

Country Status (1)

Country Link
JP (1) JPH03148152A (en)

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