JPH03180468A - Production of sputtering target - Google Patents
Production of sputtering targetInfo
- Publication number
- JPH03180468A JPH03180468A JP1319394A JP31939489A JPH03180468A JP H03180468 A JPH03180468 A JP H03180468A JP 1319394 A JP1319394 A JP 1319394A JP 31939489 A JP31939489 A JP 31939489A JP H03180468 A JPH03180468 A JP H03180468A
- Authority
- JP
- Japan
- Prior art keywords
- sputtering target
- target
- mixture
- melting point
- state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、薄膜形成するためのスパッタ用ターゲットの
製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method of manufacturing a sputtering target for forming a thin film.
従来の技術
薄膜形成するために用いられるスパッタ用ターゲットは
広く一般に利用されているが、通常減圧雰囲気中または
不活性ガス雰囲気中で材料を加熱溶解させ合金状態にし
て冷却する。ここで生成された焼成物を椙かい機などで
粉砕し、金型に入れ不活性ガス中で加圧を行ないホット
プレスなどで製造されていた。BACKGROUND OF THE INVENTION Sputtering targets used for forming thin films are widely used, and materials are usually heated and melted in a reduced pressure atmosphere or an inert gas atmosphere to form an alloy and then cooled. The fired product produced here was pulverized using a mill, placed in a mold, pressurized in an inert gas, and manufactured using a hot press or the like.
発明が解決しようとする課題
しかしながら、スパッタ用ターゲットを製造する場合、
混合された金属を溶融させる工程を設けており、生産性
の低下や設備が大掛かりになるという問題がある。また
、溶融させ冷却するということでターゲット中に不純物
が入りやすいという問題があった。また、蒸気圧の高い
成分が蒸発し易いため、目標組成を得ることが困難であ
るという問題があった。Problems to be Solved by the Invention However, when manufacturing a sputtering target,
This method involves a process of melting the mixed metals, which poses problems such as reduced productivity and the need for large-scale equipment. In addition, there was a problem in that impurities were likely to enter the target because it was melted and cooled. In addition, there was a problem in that it was difficult to obtain a target composition because components with high vapor pressure easily evaporated.
本発明はこのような課題を解決するもので、不純物の少
ない目標組成を持つスパッタ用ターゲットを容易に得る
ことができるスパッタ用ター−ゲットの製造方法を提供
することを目的とするものである。SUMMARY OF THE INVENTION The present invention is intended to solve these problems, and it is an object of the present invention to provide a method for manufacturing a sputtering target that can easily obtain a sputtering target having a target composition containing few impurities.
課題を解決するための手段
この課題を解決するために本発明は、２種類以上の金属
または半金属よりなる材料を粉砕混合して均一な混合物
とした後、この混合物をホットプレスにより非合金状態
の成形体とするものである。Means for Solving the Problem In order to solve this problem, the present invention involves grinding and mixing two or more types of metals or semimetals to form a homogeneous mixture, and then hot-pressing this mixture into a non-alloyed state. This is a molded article.
作用
この構成により、非合金状態の成形体とすることで、融
点以上に上げないために不純物の混入を防ぎ、混合物を
安定な状態で製造することができる０以上のことから不
純物の少ない、目標組成を持つターゲットを容易に得る
ことが可能となる。Effect With this configuration, by creating a molded body in a non-alloyed state, it is possible to prevent the mixing of impurities by not raising the temperature above the melting point, and to produce a mixture in a stable state. It becomes possible to easily obtain a target having a certain composition.
実施例 以下、本発明の一実施例について詳細に説明する。Example Hereinafter, one embodiment of the present invention will be described in detail.
なお、下記の説明では金属または半金属材料としてＴｅ
、Ｇｅ、Ｓｂを使用した。In the following explanation, Te is used as a metal or semimetal material.
, Ge, and Sb were used.
まず、Ｔｅ、Ｇｅ、Ｓｂの金属粉末を目標組成になるよ
うに秤量し、撞かい機あるいはボールミルなどで混傘し
、均一な混合物を作成する。この混合物をたとえばΦ１
５０Ｉｆｌ＋、厚さ６ｍの成形体になるような金型に入
れＮ２のような不活性ガス雰囲気中で５０ｋＩｒ／ｄか
ら３００ｈｇ／−の範囲で加圧を行なうとともに、３つ
の元素のうち最も融点の低いＴｅの融点４４９℃より低
い温度、たとえば３５０℃に加熱して非合金状態でホッ
トプレスを行ない、Ｔ ｅ −Ｇ ｅ −Ｓ ｂのター
ゲットを完成させる。First, metal powders of Te, Ge, and Sb are weighed so as to have a target composition, and mixed in a mill or ball mill to create a uniform mixture. For example, if this mixture is Φ1
The material with the highest melting point of the three elements is placed in a mold to form a molded product of 50 Ifl + and 6 m thick and pressurized in the range of 50 kIr/d to 300 hg/- in an inert gas atmosphere such as N2. The target of Te-Ge-Sb is completed by heating to a temperature lower than the low melting point of Te, 449°C, for example, 350°C, and performing hot pressing in an unalloyed state.
以上の実施例で説明したターゲットを用いてＡｒ雰囲気
中、３閤■０「「のスパッタ圧力でＲＦスパッタを実施
した。このようにして薄膜にした組成は１時間のスパッ
タを行なった後において、■ＣＰによる分析で目標組成
にほとんど同一であることが判明した。また、不純物と
して含有する酸素濃度を分析した結果、非合金状態で成
形するため、はとんど検出されなかった。Using the target described in the above example, RF sputtering was carried out in an Ar atmosphere at a sputtering pressure of 3 mm. After sputtering for 1 hour, the composition formed into a thin film in this way (2) Analysis by CP revealed that the composition was almost the same as the target composition.Also, as a result of analysis of the concentration of oxygen contained as an impurity, it was hardly detected because it was molded in a non-alloyed state.
ところで本実施例においてはＴｅ、Ｇｅ、Ｓｂの金属を
用いて説明したが、他の金属または半金属についても同
様である。また、その種類は２種類以上で、金属または
半金属の融点が３００℃以上のものであれば良く、要は
混合物の中で最も融点の低い金属または半金属が活性状
態になる温度を選択すれば良い。Incidentally, although this embodiment has been described using metals Te, Ge, and Sb, the same applies to other metals or semimetals. In addition, there may be two or more types, as long as the metal or metalloid has a melting point of 300°C or higher, and the key is to select the temperature at which the metal or metalloid with the lowest melting point in the mixture becomes active. Good.
発明の効果
以上のように本発明によれば、簡易な方法で不純物の少
ない目標組成を持つスパッタ用ターゲットを容易に得る
ことができるスパッタ用ターゲットの製造方法を提供す
ることができる。Effects of the Invention As described above, according to the present invention, it is possible to provide a method for manufacturing a sputtering target that can easily obtain a sputtering target having a target composition with few impurities using a simple method.
Claims (1)
混合して均一な混合物とした後、この混合物をホットプ
レスにより非合金状態の成形体とすることを特徴とする
スパッタ用ターゲットの製造方法。1. A method for producing a sputtering target, which comprises pulverizing and mixing two or more types of metals or semimetals to form a homogeneous mixture, and then hot-pressing the mixture to form a non-alloyed compact. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1319394A JPH03180468A (en) | 1989-12-08 | 1989-12-08 | Production of sputtering target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1319394A JPH03180468A (en) | 1989-12-08 | 1989-12-08 | Production of sputtering target |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03180468A true JPH03180468A (en) | 1991-08-06 |
Family
ID=18109686
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1319394A Pending JPH03180468A (en) | 1989-12-08 | 1989-12-08 | Production of sputtering target |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03180468A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009034775A1 (en) | 2007-09-13 | 2009-03-19 | Nippon Mining & Metals Co., Ltd. | Method for producing sintered body, sintered body, sputtering target composed of the sintered body, and sputtering target-backing plate assembly |
| WO2009057422A1 (en) | 2007-11-01 | 2009-05-07 | Nippon Mining & Metals Co., Ltd. | Copper anode or phosphorus-containing copper anode, method for electroplating copper on semiconductor wafer, and semiconductor wafer with particle not significantly deposited thereon |
| JP2017025349A (en) * | 2015-07-15 | 2017-02-02 | 三菱マテリアル株式会社 | Te-Ge-based sputtering target and method for producing Te-Ge-based sputtering target |
-
1989
- 1989-12-08 JP JP1319394A patent/JPH03180468A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009034775A1 (en) | 2007-09-13 | 2009-03-19 | Nippon Mining & Metals Co., Ltd. | Method for producing sintered body, sintered body, sputtering target composed of the sintered body, and sputtering target-backing plate assembly |
| WO2009057422A1 (en) | 2007-11-01 | 2009-05-07 | Nippon Mining & Metals Co., Ltd. | Copper anode or phosphorus-containing copper anode, method for electroplating copper on semiconductor wafer, and semiconductor wafer with particle not significantly deposited thereon |
| JP2017025349A (en) * | 2015-07-15 | 2017-02-02 | 三菱マテリアル株式会社 | Te-Ge-based sputtering target and method for producing Te-Ge-based sputtering target |
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