JPH03182011A - Organic superconductor thin film and its manufacture - Google Patents
Organic superconductor thin film and its manufactureInfo
- Publication number
- JPH03182011A JPH03182011A JP1320974A JP32097489A JPH03182011A JP H03182011 A JPH03182011 A JP H03182011A JP 1320974 A JP1320974 A JP 1320974A JP 32097489 A JP32097489 A JP 32097489A JP H03182011 A JPH03182011 A JP H03182011A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film
- organic
- substrate
- monomolecular
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000002887 superconductor Substances 0.000 title abstract description 4
- 239000010408 film Substances 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 230000001186 cumulative effect Effects 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 15
- 239000011521 glass Substances 0.000 abstract description 11
- 239000002253 acid Substances 0.000 abstract description 8
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 239000002841 Lewis acid Substances 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 150000007513 acids Chemical class 0.000 abstract description 2
- 229910052736 halogen Inorganic materials 0.000 abstract description 2
- 150000002367 halogens Chemical class 0.000 abstract description 2
- 150000007517 lewis acids Chemical class 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 229910052723 transition metal Inorganic materials 0.000 abstract description 2
- 150000003624 transition metals Chemical class 0.000 abstract description 2
- 239000002356 single layer Substances 0.000 abstract 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 abstract 1
- 239000005977 Ethylene Substances 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 abstract 1
- 229920000728 polyester Polymers 0.000 abstract 1
- 239000000370 acceptor Substances 0.000 description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- 235000014113 dietary fatty acids Nutrition 0.000 description 4
- 229930195729 fatty acid Natural products 0.000 description 4
- 239000000194 fatty acid Substances 0.000 description 4
- 150000004665 fatty acids Chemical class 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical compound N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- -1 dimethyl (ethylenedithio) Chemical class 0.000 description 3
- 239000008151 electrolyte solution Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000009918 complex formation Effects 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- YMWLPMGFZYFLRP-UHFFFAOYSA-N 2-(4,5-dimethyl-1,3-diselenol-2-ylidene)-4,5-dimethyl-1,3-diselenole Chemical compound [Se]1C(C)=C(C)[Se]C1=C1[Se]C(C)=C(C)[Se]1 YMWLPMGFZYFLRP-UHFFFAOYSA-N 0.000 description 1
- XFMDETLOLBGJAX-UHFFFAOYSA-N 2-methylideneicosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCC(=C)C(O)=O XFMDETLOLBGJAX-UHFFFAOYSA-N 0.000 description 1
- CMSGUKVDXXTJDQ-UHFFFAOYSA-N 4-(2-naphthalen-1-ylethylamino)-4-oxobutanoic acid Chemical compound C1=CC=C2C(CCNC(=O)CCC(=O)O)=CC=CC2=C1 CMSGUKVDXXTJDQ-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- LLCSWKVOHICRDD-UHFFFAOYSA-N buta-1,3-diyne Chemical group C#CC#C LLCSWKVOHICRDD-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920001184 polypeptide Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 102000004196 processed proteins & peptides Human genes 0.000 description 1
- 108090000765 processed proteins & peptides Proteins 0.000 description 1
- JUJWROOIHBZHMG-UHFFFAOYSA-O pyridinium Chemical compound C1=CC=[NH+]C=C1 JUJWROOIHBZHMG-UHFFFAOYSA-O 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 239000003115 supporting electrolyte Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
Description
本発明は、超電導性を有する有機薄膜に関し、さらに詳
しくは、ラングミュア−プロジェット膜(LB膜)法に
よる有機超電導性薄膜とその製造法に関する。The present invention relates to an organic thin film having superconductivity, and more particularly to an organic superconducting thin film using the Langmuir-Prodgett film (LB film) method and a method for producing the same.
有機薄膜は、LB腹膜法蒸着法、ICB(クラスターイ
オンビーム蒸@)法およびMBE (分子線エピタキシ
)法などの技術により製造される。
これらの有機薄膜製造方法により、テトラシアノキノジ
メタン(TCNQ) 、テトラチオフルバレン−テトラ
シアノキノジメタン(TTF−TCNQ) 、金属フタ
ロシアニン等の半導電性ないし導電性の有機薄膜や、脂
肪酸などの絶縁膜が作成されてきた。
電気伝導性を有する有機薄膜は、電気伝導体あるいは半
導体としての性質を利用して、エレクトロニクスやオプ
トエレクトロニクス材料、エネルギー変換材料などへの
応用が可能である。特に、高い導電性、さらには超電導
性をもつ有機薄膜は、ミクロ配線、ストリップ線路、セ
ンサ、表示素子、メモリ、スイッチング素子などへの応
用が期待される。
ところで、LB腹膜法よる有機導電性超薄膜技術として
、例えば、ヨウ素ドープしたフタロシアニンLB膜(電
気伝導度10−’S/cm) s長鎖ピリジニウム・テ
トラシアノキノジメタン(TCNQ)1:1錯体のLB
膜(10−’S/cm)などがある。
また、ヨウ素ドープなどの二次処理を行なわないで、長
鎖炭化水素基を有する電荷移動錯体化合物からなる導電
性超薄膜も提案されている(特開昭62−163205
号)。
このように、従来、LB腹膜法よる導電性有機超薄膜の
作成が試みられているが、金属的な電導度、もしくは金
属的な電導性を示す有機薄膜は、いまだ作成されていな
い。超電導を示す有機超薄膜も知られていない。
〔発明が解決しようす−る課題〕
本発明の目的は、高い電導度や金属的な電導性を示す有
機薄膜、さらには超電導を示す有機薄膜を提供すること
にある。
本発明者らは、有機超電導体薄膜を作成すべく鋭意研究
した結果、導電性基板上に、ドナー分子(電子供与体)
を含む単分子膜形成物質の単分子累積膜を形成し、次い
で、アクセプター(電子受容体)を電解法によりドーピ
ングすることにより、超導電性を示す有機薄膜の得られ
ることを見出し、この知見に基づいて本発明を完成する
に至った。
〔課題を解決するための手段〕
かくして、本発明によれば、導電性基板上に、ドナー分
子を含む単分子膜形成物質の単分子累積膜を形成し、次
いで、アクセプターを電解法によりドーピングすること
を特徴とする有機超電導薄膜およびその製造法が提供さ
れる。
以下、本発明について詳述する。
本発明の導電性有機薄膜の製造方法は、基本的に次の各
工程を包含する。
(1)導電性基板上に、ドナー分子と単分子累積膜形成
物質との混合物を用い、LB法により単分子累積膜を作
成する。
(2)次いで、アクセプターを電解法により膜中にドー
ピングして、有機超電導薄膜を得る。
本発明で用いるドナー分子としては、例えば、ビスエチ
レンジチオテトラチアフルバレン(BEDT−TTF)
、テトラメチルテトラセレノフルバレン(TMTSF
) 、ジメチル(エチレンジチオ)ジセレナジチアフル
バレン (DMET) 、メチレンジチオテトラチアフ
ルバレン(MDT−TTFlなどを挙げることができる
。
ドナー分子と混合して用いる単分子膜形成物質としては
、例えば、バルミチン酸、ステアリン酸、アラキシン酸
などの脂肪酸;ω−トリコセン酸、α−オクタデシルア
クリル酸、ジアセチレン誘導体などの二重結合や三重結
合を有する重合性脂肪酸;アルキルビロールなどの電解
重合性モノマー;ポリメタクリル酸、ポリビニルアルコ
ール、ポリビニルアセテート、ポリメチルメタクリレー
ト、ポリペプチド、ポリイミドなどの高分子物質;等が
挙げられる。
本発明で使用する導電性基板は、特に限定されず、例え
ば、ITOコートガラス、IOココ−ガラス、NESA
ガラス、ITOコートポリエステルフィルム、金属蒸着
ガラス、シリコンウェハ(n型、p型)、導電性高分子
フィルムや薄膜、導電性LB膜、カーボン、グラファイ
トなどからなる基板などを挙げることができる。
本発明で用いるアクセプターとしては、ハロゲン、ルイ
ス酸、プロトン酸、遷移金属ハロゲン化物、その他のド
ーパントがあり、例えば、11IBr*−、Brx\B
F、−1IC12−、AuI=−1AuCji−1Au
Brx−1Hg*、 5tBrs、PFa−、Au(C
N)*−1NO,−1Cu(NC3)*−、Ag(NC
3)i−、Au(NC3)x−、CjO,−Cu (N
C3e) *−1Cu(NCO)*−、Au(CN)*
−1N03−1Re04\等の陰イオンを例示すること
ができるが、これらに限定されるものではない。
本発明においては1.LB法により、導電性基板上に、
ドナー分子と単分子累積膜形成物質とからなる単分子累
積膜を形成させる。
LB法は、通常、水面上に単分子膜を形成させ、この単
分子膜を固体基板上に移しとり、1分子層が固定された
単分子膜あるいは水面からの移しとりを繰り返し単分子
膜を重ねた累積膜(LB膜)を作成する方法である。
具体的には、LB膜作製装置(市販品でよい)を用い、
ドナー分子と単分子形成物質をクロロホルム、アセトニ
トリル、ベンゼン等の展開溶媒に溶解して、ラングミュ
ア・トラフの水面上に滴下して展開し、溶媒を気化させ
る。次いで、可動性の浮子などを用いて、表面積および
表面圧を制御して、単分子膜を形成した後、垂直付着法
や水平付着法など公知の方法により、導電性基板上に単
分子膜を繰り返し付着させ、単分子累積膜を形成する。
累積する回数により、膜厚を制御することができる。膜
厚数10人の単分子膜から、数100〜数1000人の
厚さの薄膜を容易に得ることができる。
本発明においては、ドナー分子を含む単分子膜形成物質
の有機超薄膜が形成された導電性基板を陽極として、ア
クセプターを、電気化学的酸化還元法(電解法)によっ
て、ドーピングする。ドーピングにより、ドナー分子と
アクセプターとの電荷移動錯体形成反応が膜中で起こり
、有機超電導薄膜を得ることができる。
電解法によるドーピングは、例えば、公知の電解結晶成
長装置などを用いて、常法により行なうことができる。
ただし、電解液は、ドナー分子を含まず、アクセプター
のみを含むものを用いる。
さらに、ドナー分子や単分子膜形成物質が溶解しない溶
媒を用いる必要がある。溶媒としては、メタノール、エ
タノールなどのアルコール類や水などが効果的である。
電解ドーピングの条件としては、例えば、20℃、0.
5μA、5〜6時間でドーピングを完了することができ
る。ドーピングの進行は、当初の無色ないしは淡黄色の
薄膜が黒褐色に変化することから分かる。
本発明の実施例では、第3図に示す反応器を用い、陽極
側に薄膜を形成した導電性基板(10)を保持できるよ
うにし、陰極側に白金板(11)を用いた。電解液とし
ては、前記陰イオンを含む支持電解質を、酸化・還元を
受けにくい極性の強い有機溶媒溶液に溶解したものを用
いる。
本発明では、電解法によりドーピングを行なうため、電
位や電気量を制御することにより、ドープ率を任意かつ
正確に制御することができる。
単分子膜形成物質として、重合性脂肪酸や電解重合性モ
ノマーを用いた場合、ドーピング完了後、重合を行なう
ことにより、膜強度の向上、耐熱性の向上を図ることが
できる。アルキルビロールなど導電性ポリマーを与える
単分子膜形成物質を用いると、得られる有機超電導薄膜
の電導度が向上するので好ましい。Organic thin films are manufactured by techniques such as LB peritoneal deposition, ICB (cluster ion beam evaporation), and MBE (molecular beam epitaxy). These organic thin film manufacturing methods can produce semiconductive or conductive organic thin films such as tetracyanoquinodimethane (TCNQ), tetrathiofulvalene-tetracyanoquinodimethane (TTF-TCNQ), metal phthalocyanine, fatty acids, etc. Insulating films have been created. Organic thin films with electrical conductivity can be applied to electronics, optoelectronic materials, energy conversion materials, etc. by utilizing their properties as electrical conductors or semiconductors. In particular, organic thin films with high conductivity and even superconductivity are expected to be applied to microwirings, strip lines, sensors, display elements, memories, switching elements, etc. By the way, as an organic conductive ultra-thin film technology using the LB peritoneal method, for example, iodine-doped phthalocyanine LB film (electrical conductivity 10-'S/cm) s long chain pyridinium tetracyanoquinodimethane (TCNQ) 1:1 complex LB
There are membranes (10-'S/cm), etc. Furthermore, a conductive ultra-thin film made of a charge transfer complex compound having a long-chain hydrocarbon group without performing secondary treatments such as iodine doping has also been proposed (Japanese Patent Laid-Open No. 163-205-1989).
issue). As described above, attempts have been made to create conductive organic ultra-thin films using the LB peritoneal method, but no organic thin film that exhibits metallic conductivity or metallic conductivity has yet been created. There are also no known organic ultrathin films that exhibit superconductivity. [Problems to be Solved by the Invention] An object of the present invention is to provide an organic thin film that exhibits high electrical conductivity or metallic conductivity, and furthermore, an organic thin film that exhibits superconductivity. As a result of intensive research to create an organic superconductor thin film, the present inventors discovered that donor molecules (electron donors)
They discovered that an organic thin film exhibiting superconductivity could be obtained by forming a monomolecular cumulative film of a monomolecular film-forming substance containing , and then doping with acceptors (electron acceptors) using an electrolytic method. Based on this, the present invention has been completed. [Means for Solving the Problems] Thus, according to the present invention, a monomolecular cumulative film of a monomolecular film-forming substance containing donor molecules is formed on a conductive substrate, and then an acceptor is doped by an electrolytic method. An organic superconducting thin film and a method for producing the same are provided. The present invention will be explained in detail below. The method for producing a conductive organic thin film of the present invention basically includes the following steps. (1) A monomolecular cumulative film is created on a conductive substrate by the LB method using a mixture of donor molecules and a monomolecular cumulative film forming substance. (2) Next, an acceptor is doped into the film by an electrolytic method to obtain an organic superconducting thin film. As the donor molecule used in the present invention, for example, bisethylene dithiotetrathiafulvalene (BEDT-TTF)
, tetramethyltetraselenofulvalene (TMTSF
), dimethyl (ethylenedithio) diselena dithiafulvalene (DMET), methylene dithiotetrathiafulvalene (MDT-TTFl), etc. Examples of the monomolecular film forming substance used in combination with donor molecules include, for example, valmitin. fatty acids such as stearic acid and alaxic acid; polymerizable fatty acids with double bonds and triple bonds such as ω-tricosenic acid, α-octadecyl acrylic acid, and diacetylene derivatives; electrolytically polymerizable monomers such as alkylvirol; Examples include polymeric substances such as methacrylic acid, polyvinyl alcohol, polyvinyl acetate, polymethyl methacrylate, polypeptide, and polyimide.The conductive substrate used in the present invention is not particularly limited, and includes, for example, ITO coated glass, IO coco glass, NESA
Examples include substrates made of glass, ITO-coated polyester film, metallized glass, silicon wafers (n-type, p-type), conductive polymer films and thin films, conductive LB films, carbon, graphite, and the like. Acceptors used in the present invention include halogens, Lewis acids, protonic acids, transition metal halides, and other dopants, such as 11IBr*-, Brx\B
F, -1IC12-, AuI=-1AuCji-1Au
Brx-1Hg*, 5tBrs, PFa-, Au(C
N)*-1NO,-1Cu(NC3)*-,Ag(NC
3) i-, Au(NC3)x-, CjO,-Cu (N
C3e) *-1Cu (NCO) *-, Au (CN) *
Examples include anions such as -1N03-1Re04\, but are not limited to these. In the present invention, 1. By the LB method, on a conductive substrate,
A monomolecular cumulative film consisting of a donor molecule and a monomolecular cumulative film forming substance is formed. In the LB method, a monomolecular film is usually formed on a water surface, this monomolecular film is transferred onto a solid substrate, and the monomolecular film is repeatedly transferred from the water surface to a fixed monomolecular layer. This is a method of creating a stacked cumulative film (LB film). Specifically, using an LB film production device (a commercially available product may be used),
The donor molecule and the monomolecule-forming substance are dissolved in a developing solvent such as chloroform, acetonitrile, or benzene, and the solution is dropped onto the water surface of the Langmuir Trough to be developed, and the solvent is vaporized. Next, a movable float or the like is used to control the surface area and surface pressure to form a monomolecular film, and then the monomolecular film is deposited on a conductive substrate by a known method such as a vertical adhesion method or a horizontal adhesion method. Repeated deposition forms a monomolecular cumulative film. The film thickness can be controlled by the number of times of accumulation. From a monomolecular film with a thickness of several 10 layers, a thin film with a thickness of several 100 to several 1000 layers can be easily obtained. In the present invention, an acceptor is doped by an electrochemical redox method (electrolysis method) using a conductive substrate on which an organic ultra-thin film of a monolayer-forming substance containing donor molecules is formed as an anode. By doping, a charge transfer complex formation reaction between donor molecules and acceptors occurs in the film, and an organic superconducting thin film can be obtained. Doping by electrolytic method can be performed by a conventional method using, for example, a known electrolytic crystal growth apparatus. However, the electrolytic solution used does not contain donor molecules but only contains acceptors. Furthermore, it is necessary to use a solvent in which donor molecules and monolayer-forming substances are not dissolved. As the solvent, alcohols such as methanol and ethanol, water, etc. are effective. The conditions for electrolytic doping are, for example, 20°C and 0.5°C.
Doping can be completed in 5 to 6 hours at 5 μA. The progress of doping can be seen from the fact that the initially colorless or pale yellow thin film changes to blackish brown. In the example of the present invention, a reactor shown in FIG. 3 was used, and a conductive substrate (10) on which a thin film was formed could be held on the anode side, and a platinum plate (11) was used on the cathode side. The electrolytic solution used is one in which the supporting electrolyte containing the anion is dissolved in a highly polar organic solvent solution that is not susceptible to oxidation and reduction. In the present invention, since doping is performed by an electrolytic method, the doping rate can be arbitrarily and accurately controlled by controlling the potential and the amount of electricity. When a polymerizable fatty acid or an electrolytically polymerizable monomer is used as the monomolecular film forming substance, the film strength and heat resistance can be improved by polymerizing the monomer after doping is completed. It is preferable to use a monomolecular film-forming substance that provides a conductive polymer, such as alkylpyrrole, since this improves the conductivity of the resulting organic superconducting thin film.
以下、本発明について実施例を挙げて具体的に説明する
が、本発明は、これらの実施例のみに限定されるもので
はない。
[実施例1]
導電性基板として、ITOガラス基板(10mmX20
mmX 1mm)を用い、以下の方法で該基板上にBE
DT−TTFと単分子膜形成物質との混合物からなる累
積膜を作成した。
BEDT−TTFとアラキシン酸とを精製クロロホルム
に、BEDT−TTFとアラキシン酸とのモル比がl:
lとなるように加えて溶解させ、サブフェーズとしてC
dCn、4X 10−’M、KHCOコ5×10−@M
を含む水を用い、LB膜作製装置を使用する通常の方法
で、ラングミュア・トラフに単分子膜を作成した。
この水面上の単分子膜を、ITOコートガラス基板上に
、垂直浸漬法により繰り返し移しとって累積し、膜厚約
1000入の累積膜(LB膜)を作製した(第1図)。
次いで、第2図に示す反応器(4)中で、窒素ガス雰囲
気中でCuSCN70mg%KSCN126mg、18
−クラウン−6210mgを100mI2のエタノール
に溶解させ、電解液(5)を調製した。
次に、第3図に示すように、BEDT−TTF/アラキ
シン酸混合LB膜を形成したITOコートガラス基板(
lO)を電解液中に浸漬し、陽極側に金属クリップ(9
)で保持し、温度20℃の恒温器(図示せず)中で、両
電極間に10ILAの直流定電流を流した。
約5〜6時間で、無色ないし淡黄色の薄膜が黒色に変化
し始め、電荷移動錯体形成反応の起こっていることが確
認された。反応終了後、基板を取出し、エタノールで洗
浄し、乾燥させた。
得られた黒色薄膜のX線回折結果からに−(BEDT−
TTF) icu (NCS) *に帰属されるピーク
の存在が確認できた。
この薄膜の直流帯磁率を測定したところ、約8にでマイ
スナー効果を示した。
また、この黒色薄膜の電導度は、室温で1×10−”3
7cmであった。
〔発明の効果]
本発明により、アクセプターによりドーピングされたド
ナー分子と単分子膜形成物質のLB膜からなる有機超電
導性薄膜を提供することができる。
この有機超電導性薄膜は、その低い作成温度のゆえに、
各種の基板材料の上に薄膜製作、加工が可能であり、接
合の作成やセンサ、デバイスの作成に有効に利用できる
。
そして、電磁シールド、磁気シールド、ミクロ配線、ス
トリップ線路、センサ、表示素子、メモリ、スイッチン
グ素子などへの応用が期待される。EXAMPLES The present invention will be specifically described below with reference to Examples, but the present invention is not limited to these Examples. [Example 1] As a conductive substrate, an ITO glass substrate (10 mm x 20
BE is applied onto the substrate using the following method.
A cumulative film consisting of a mixture of DT-TTF and a monomolecular film-forming substance was created. BEDT-TTF and alaxic acid were mixed into purified chloroform, and the molar ratio of BEDT-TTF and alaxic acid was l:
1 and dissolve it, and as a subphase C
dCn, 4X 10-'M, KHCO 5x10-@M
A monomolecular film was created in the Langmuir trough by a conventional method using water containing . This monomolecular film on the water surface was repeatedly transferred and accumulated on an ITO-coated glass substrate by a vertical dipping method to produce a cumulative film (LB film) with a film thickness of about 1000 cm (FIG. 1). Next, in the reactor (4) shown in FIG. 2, CuSCN70mg%KSCN126mg, 18
-Crown-6210 mg was dissolved in 100 mI2 of ethanol to prepare an electrolytic solution (5). Next, as shown in Fig. 3, an ITO-coated glass substrate (
1O) is immersed in the electrolyte, and a metal clip (9) is attached to the anode side.
), and a constant DC current of 10 ILA was passed between both electrodes in a thermostat (not shown) at a temperature of 20°C. In about 5 to 6 hours, the colorless to pale yellow thin film began to turn black, confirming that a charge transfer complex formation reaction was occurring. After the reaction was completed, the substrate was taken out, washed with ethanol, and dried. From the X-ray diffraction results of the obtained black thin film -(BEDT-
The presence of a peak assigned to TTF) ICU (NCS)* was confirmed. When the DC magnetic susceptibility of this thin film was measured, it showed a Meissner effect at about 8. Moreover, the electrical conductivity of this black thin film is 1×10-”3 at room temperature.
It was 7cm. [Effects of the Invention] According to the present invention, it is possible to provide an organic superconducting thin film consisting of a donor molecule doped with an acceptor and an LB film of a monomolecular film forming substance. This organic superconducting thin film, due to its low production temperature,
It is possible to fabricate and process thin films on various substrate materials, and it can be effectively used to create bonds, sensors, and devices. Applications are expected for electromagnetic shielding, magnetic shielding, microwiring, strip lines, sensors, display elements, memories, switching elements, etc.
【図面の簡単な説明】
第1図は、BEDT−TTF/アラキシン酸単分酸素分
子累積膜したITOコートガラス基板の断面図と平面図
である。
第2図は、電子アクセプターを含む溶液を作成する反応
容器の略図であり、第3図は、電解法による電子アクセ
プターのドーピングを行なう装置の略図である。
第1図ないし第3図中の符合は、次のとおりである。
1 、、、 BEDT−TTF/アラキシン酸単分酸素
分子累積膜、、ITO層、310.ガラス基板、491
0反応器、590.電解液、
619.ガラスフィルター
711.リードI! (陽極側)、
7’、、、 リード線(陰極側)、
809.ポリテトラフルオロエチレン製テルモホルダー
931.金属製クリップ、
Ol、。
BEDT−T丁F/アラキシン酸単分子累積膜を有する
導電性基板、
l 0.。
白金電極BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view and a plan view of an ITO-coated glass substrate coated with a BEDT-TTF/araxic acid monooxygen molecule cumulative film. FIG. 2 is a schematic diagram of a reaction vessel for preparing a solution containing electron acceptors, and FIG. 3 is a schematic diagram of an apparatus for doping electron acceptors by an electrolytic method. The symbols in FIGS. 1 to 3 are as follows. 1, BEDT-TTF/araxic acid monooxygen molecule cumulative film, ITO layer, 310. Glass substrate, 491
0 reactor, 590. Electrolyte, 619. Glass filter 711. Lead I! (Anode side), 7', Lead wire (Cathode side), 809. Terumo holder 931 made of polytetrafluoroethylene. Metal clip, Ol. BEDT-T Ding F/Conductive substrate having a monomolecular araxic acid cumulative film, l 0. . platinum electrode
Claims (2)
物質の単分子累積膜を形成し、次いで、アクセプターを
電解法によりドーピングすることを特徴とする有機超電
導薄膜の製造法。(1) A method for producing an organic superconducting thin film, which comprises forming a monomolecular cumulative film of a monomolecular film-forming substance containing donor molecules on a conductive substrate, and then doping with an acceptor by an electrolytic method.
物質の単分子累積膜を形成し、次いで、アクセプターを
電解法によりドーピングしてなることを特徴とする有機
超電導薄膜。(2) An organic superconducting thin film characterized in that a monomolecular cumulative film of a monomolecular film-forming substance containing donor molecules is formed on a conductive substrate, and then an acceptor is doped by an electrolytic method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1320974A JPH03182011A (en) | 1989-12-11 | 1989-12-11 | Organic superconductor thin film and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1320974A JPH03182011A (en) | 1989-12-11 | 1989-12-11 | Organic superconductor thin film and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03182011A true JPH03182011A (en) | 1991-08-08 |
Family
ID=18127380
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1320974A Pending JPH03182011A (en) | 1989-12-11 | 1989-12-11 | Organic superconductor thin film and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03182011A (en) |
-
1989
- 1989-12-11 JP JP1320974A patent/JPH03182011A/en active Pending
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