JPH03183761A - Vapor deposition method - Google Patents

Vapor deposition method

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Publication number
JPH03183761A
JPH03183761A JP32188089A JP32188089A JPH03183761A JP H03183761 A JPH03183761 A JP H03183761A JP 32188089 A JP32188089 A JP 32188089A JP 32188089 A JP32188089 A JP 32188089A JP H03183761 A JPH03183761 A JP H03183761A
Authority
JP
Japan
Prior art keywords
gas
refractive index
vapor deposition
vacuum
index layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP32188089A
Other languages
Japanese (ja)
Inventor
Tatsuo Ota
達男 太田
Tomohito Nakano
智史 中野
Setsuo Tokuhiro
節夫 徳弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konica Minolta Inc
Original Assignee
Konica Minolta Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Inc filed Critical Konica Minolta Inc
Priority to JP32188089A priority Critical patent/JPH03183761A/en
Publication of JPH03183761A publication Critical patent/JPH03183761A/en
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To stably produce a vapor deposited film having uniform film thickness and free from reduction in F content by vacuum-depositing MgF2 in the presence of O2 gas or a gaseous mixture of O2 and inert gas. CONSTITUTION:The vacuum vapor deposition of MgF2 is carried out in the presence of O2 gas or gaseous mixture of O2 and inert gas, such as Ar. At this time, suitable O2 gas pressure is about 1.0-4X10<-4>mbar. Further, it is preferable to regulate the temp. of the substrate for vapor deposition to about 250-350 deg.C. By this method, the vapor deposited film having uniform film thickness, free from reduction in F content in the film, and excellent in the reproducibility and precision of optical refractive index can be obtained. By cumulatively vacuum-depositing the MgF2 low refractive index layer onto the high refractivity index layer composed essentially of TiO2 or Pr2O3 by the above method, the cumulative vapor deposited layer having uniform and stable optical properties can be formed.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は光学系に用いられる薄膜の蒸着法に関し、詳し
くは薄膜組成の安定化に関する。
DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a method for depositing a thin film used in an optical system, and more particularly to stabilizing the composition of a thin film.

(発明の背景) 近年、大容量のデータ記憶装置の必要性が高まり、光デ
イスク装置、光磁気ディスク装置などが多く利用される
ようになっている。これらの装置では、光学ヘッドを使
用してデータを読み取っている。この光学ヘッドの中に
ビームスプリッタが使用されており、骸光学ヘッドは例
えば所定形状に加工されたプリズムの一面に、高屈折率
の防電体物質と低屈折率の誘電体物質とが真空蒸着等に
より交互に累積された積層光学膜が形成される。
(Background of the Invention) In recent years, the need for large-capacity data storage devices has increased, and optical disk devices, magneto-optical disk devices, and the like have come into widespread use. These devices use optical heads to read data. A beam splitter is used in this optical head, and in the Mukuro optical head, for example, a high refractive index electrically shielding material and a low refractive index dielectric material are vacuum-evaporated on one surface of a prism processed into a predetermined shape. A laminated optical film is formed by alternately stacking layers.

前記真空蒸着法は、蒸着物質に対する禁忌が少く、薄膜
形成の制御が容易で、作業性がよく大量生産に適してい
ることから広く活用されている。
The vacuum evaporation method is widely used because there are few contraindications to the evaporation substance, easy control of thin film formation, good workability, and suitability for mass production.

しかし一方において、蒸着条件によって薄膜の性質が変
り易く、合金、化合物を蒸着すると蒸発源m或と蒸着暎
組戊との間に差を生することが多い。即ち一般に真空蒸
着法におていは、基板ホールダに配置された基板上への
蒸着膜厚を均一にするために、真空槽中にアルゴン等の
不活性ガスを導入し、訣ガス圧を調整しながら蒸着が進
められるが、往々にして製造バッチ間或はパッチ内で、
基板上に生皮した薄膜特性が変動する。
However, on the other hand, the properties of the thin film tend to change depending on the deposition conditions, and when alloys and compounds are deposited, there are often differences between the evaporation source and the deposition process. That is, in general, in the vacuum evaporation method, in order to make the thickness of the evaporated film uniform on the substrate placed in the substrate holder, an inert gas such as argon is introduced into the vacuum chamber and the gas pressure is adjusted. However, often between production batches or within patches,
The properties of the thin film deposited on the substrate vary.

その顕著な例として弗化マグネシウム(以後MgFxと
標記する。但しX≦2)をアルゴン(Arと標記)ガス
の存在下蒸着すると、弗素の含有量の低下、従ってマグ
ネシウム(Mg)11の増大を呼び膜組成が変動し、屈
折率の変化を招く。
As a notable example, when magnesium fluoride (hereinafter referred to as MgFx, where X≦2) is deposited in the presence of argon (Ar) gas, the fluorine content decreases, and therefore the magnesium (Mg) 11 increases. The primary film composition fluctuates, leading to a change in the refractive index.

従ってレンズ、プリズム等の光学部材表面に酸化チタン
(TtO,) 、酸化プラセオジム(Prow) 、或
はその混合物Tie、−Pry、を高屈折率層とし、M
gFxを低屈折率層として繰返し積層して所定の光学特
性を有する累積N(コートティングと称す)を形成する
と、その透過率、反射率或は偏光性等の光学特性の再現
性、性能値確度が著しく不安定となる。
Therefore, a high refractive index layer of titanium oxide (TtO, ), praseodymium oxide (Prow), or a mixture thereof, Tie, -Pry, is applied to the surface of optical members such as lenses and prisms, and M
When gFx is repeatedly laminated as a low refractive index layer to form a cumulative N (referred to as coating) having predetermined optical properties, the reproducibility of optical properties such as transmittance, reflectance, or polarization, and the accuracy of performance values are improved. becomes extremely unstable.

(発明の目的) 本発明の目的は、MgFxの関る真空蒸着において、基
板ホールダに配置される基板上の蒸着膜が製造バッチ間
及びバッチ内で、 l)蒸着膜厚が均一で、 2 ) MgFx蒸着膜中の弗素含有■の低下がなく光
学屈折率の再現性、確度が良好であり、 3)高屈折率層とMgFxの関る低屈折率層からなる累
積蒸着層の光学特性が均一、安定である。
(Objective of the Invention) The object of the present invention is to ensure that, in vacuum evaporation involving MgFx, the evaporated film on the substrate placed in the substrate holder is uniform between manufacturing batches and within the batch; 1) the thickness of the evaporated film is uniform; There is no decrease in the fluorine content in the MgFx deposited film, and the reproducibility and accuracy of the optical refractive index are good. 3) The optical properties of the cumulative deposited layer consisting of a high refractive index layer and a low refractive index layer related to MgFx are uniform. , stable.

蒸着法を提供することにある。The purpose of the present invention is to provide a vapor deposition method.

(発明の構成及び作用効果) 前記した本発明の目的は、MgFxの真空蒸着を酸素ガ
ス又は酸素と不活性ガス例えば、Ar、N*等との混合
ガスの存在下に行うことを特徴とする蒸着法によって達
成される。
(Structure and Effects of the Invention) The object of the present invention described above is characterized in that MgFx is vacuum evaporated in the presence of oxygen gas or a mixed gas of oxygen and an inert gas such as Ar, N*, etc. Achieved by vapor deposition method.

更に本発明の態様は高屈折率及びMgFx低屈折率贋の
累積真空蒸着に用いて効果を挙げることができ、また前
記高屈率層としてTi01、Pr01又はその混合物T
ie、−Pry、を用いる場合にも有用である。
Furthermore, embodiments of the present invention can be effectively used for cumulative vacuum deposition of high refractive index and MgFx low refractive index layers, and the high refractive index layer may be Ti01, Pr01 or a mixture thereof T.
It is also useful when using ie, -Pry.

次に本発明の真空蒸着に用いる真空蒸着装置の概要を第
1図に示した。
Next, FIG. 1 shows an outline of the vacuum evaporation apparatus used for the vacuum evaporation of the present invention.

図において11は真空槽、12は径80〜150cmの
大きさの曲面をもつ回転する蒸着基板ホールダであって
、回転によって蒸着の均一性を図っている。
In the figure, 11 is a vacuum chamber, and 12 is a rotating vapor deposition substrate holder having a curved surface with a diameter of 80 to 150 cm, and the rotation ensures uniformity of vapor deposition.

13は蒸発源を入れる坩堝である。本発明においては低
屈折率材料(L材料と称す)としてMgF x、高屈折
率材料(H材料)としてTie、、Pro、又はその混
合物TiO,−PrO,を用いる。
13 is a crucible containing an evaporation source. In the present invention, MgF x is used as a low refractive index material (referred to as L material), and Tie, Pro, or a mixture thereof TiO, -PrO, is used as a high refractive index material (H material).

前記蒸発源は加熱によって蒸発させられるが、本発明に
おでいは好ましくは電子銃14からの電子ビーム15に
よって行われる。
The evaporation source is evaporated by heating, but in the present invention, evaporation is preferably performed by an electron beam 15 from an electron gun 14.

16はガス導入管であって、本発明に係る酸素(0,)
ガスは、単独或はArガスとの併用の場合も1.0〜4
XIO−’+mbarに調整される。尚併用するArガ
スは10〜3XIO−’mbarが好ましい。
16 is a gas introduction pipe, and oxygen (0,) according to the present invention
The gas is 1.0 to 4 when used alone or in combination with Ar gas.
Adjusted to XIO-'+mbar. The Ar gas used in combination is preferably 10 to 3XIO-'mbar.

また蒸着速度はり、H両材料共にlO〜50A/see
に制御される。
Also, the deposition rate is 1O~50A/see for both H materials.
controlled by.

蒸着基板にBK−7ガラスを用いる場合には基板温度2
50〜350℃、好ましくは300℃に調節される。
When using BK-7 glass as the deposition substrate, the substrate temperature is 2.
The temperature is adjusted to 50-350°C, preferably 300°C.

前記の要件の下にArガス単独、O,ガス単独及びAr
ガスとO,ガスの混合ガスの導入でMgFx層を蒸着し
た場合の蒸着膜中の弗素含有■を表1に相対値表 表1に明かなようにO,ガスの存在によって弗素含有量
が上り、光学特性が安定となり、またバッチ内及びバッ
チ間の膜厚分布の均一性が上る。
Under the above requirements, Ar gas alone, O, gas alone and Ar
Table 1 shows relative values of fluorine content in the deposited film when a MgFx layer is deposited by introducing a mixed gas of gas and O gas.As is clear from Table 1, the fluorine content increases due to the presence of O gas. , the optical properties become stable, and the uniformity of the film thickness distribution within and between batches increases.

弗素含有量はオージェ(Auger)電子分光法を用い
た。又Arガスの代りにN、ガスを用いた場合も同様な
煩向を示した。
The fluorine content was measured using Auger electron spectroscopy. Similar problems were also observed when N gas was used instead of Ar gas.

また累積する蒸着層数は必要に応じ任意に定めうる。本
発明における高屈折率層は” 101P r Oxの単
組戊層であってもよいし、混合物Ti0x−PrOxの
混成高屈折率層であってもよいが、すべての高屈折率層
が混成高屈折率層であることが好ましい。
Further, the number of deposited layers to be accumulated can be arbitrarily determined as necessary. The high refractive index layer in the present invention may be a single layer of 101PrOx or a composite high refractive index layer of a Ti0x-PrOx mixture, but all the high refractive index layers are composite high refractive index layers. Preferably, it is a refractive index layer.

また該as、ymにおいてpro、、’rio、の重量
比は0.5〜5、好ましくは2〜3である。
In addition, the weight ratio of pro and 'rio in as and ym is 0.5 to 5, preferably 2 to 3.

更に前記混合物に、Zr、 Ta、 Y、 La等の金
属及び/又はそれらの酸化物が特性を損なわぬ範囲含有
されていてもよい。
Further, the mixture may contain metals such as Zr, Ta, Y, La, etc. and/or oxides thereof to the extent that the properties are not impaired.

〔実施例〕〔Example〕

次に実施例によって本発明を具体的に説明する。 Next, the present invention will be specifically explained with reference to Examples.

実施例1 Pro、とTiO2とを主成分とする混合物(例えばE
Example 1 A mixture containing Pro and TiO2 as main components (for example, E
.

Merck社製商品名”サブスタンス2H;以下5ub
−■と標記)を高屈折率物質、化学量論的にMgF、を
低屈折率物質として、直角等辺三角形ガラスプリズム(
材質:BK−7)の斜辺面上に真空蒸着を用いて交互に
7層累積蒸着した。蒸着時、基板加熱温度は300℃で
あった。5ub−IIは0.ガス2X10−’mbar
、蒸着速度4 A / see%MgF、は0.ガス3
XlO−’mbar%10人/seeで蒸着を行った。
Product name “Substance 2H” manufactured by Merck; hereinafter 5ub
−■) is a high refractive index material, stoichiometrically MgF is a low refractive index material, and a right equilateral triangular glass prism (
Seven layers were alternately and cumulatively deposited on the hypotenuse surface of material: BK-7) using vacuum deposition. During vapor deposition, the substrate heating temperature was 300°C. 5ub-II is 0. Gas 2X10-'mbar
, deposition rate 4 A/see%MgF, is 0. gas 3
The deposition was carried out at XlO-'mbar% 10 people/see.

前記斜辺面から数えて奇数番層を123.6gtμの高
屈折率層(5ub−n層)、偶数番層を196.7−μ
の低屈折率層(MgFx層)とした。
Counting from the hypotenuse surface, the odd numbered layer is a high refractive index layer (5ub-n layer) of 123.6 gtμ, and the even numbered layer is 196.7-μ.
A low refractive index layer (MgFx layer) was used.

蒸着後、前記プリズムを大気中に取出し、同形の接合ガ
ラスプリズム(材質:BK−7)と、紫外線硬化型接着
剤(ノーランド社製No、61)を用いて斜辺面を接合
した。10mw/cm”の強さの紫外線を仮固定に5秒
間、本硬化に10分間照射し、第2図に示す光学プリズ
ムを作成した。
After the vapor deposition, the prism was taken out into the atmosphere, and the hypotenuse surface was bonded to a bonded glass prism of the same shape (material: BK-7) using an ultraviolet curing adhesive (No. 61, manufactured by Norland). The optical prism shown in FIG. 2 was produced by irradiating ultraviolet rays with an intensity of 10 mw/cm'' for 5 seconds for temporary fixing and 10 minutes for final curing.

このプリズムへ垂直に光を入射させた時(積層膜への入
射角は45’) P波成分とS波成分の分光透過率を第
3図に示す。
FIG. 3 shows the spectral transmittance of the P-wave component and the S-wave component when light is incident perpendicularly to this prism (the angle of incidence on the laminated film is 45').

図の実線A、、 A、に示されるように780±15m
μの波長領域で P波成分;透過率85±1%1反射率15±1%S波戊
分;透過率4±1%1反射率96±1%となり、化学量
論的MgF!を用いた設計光学特性(曲線Cp、 Cm
)に近い値かえられた。
780±15m as shown by solid lines A, A, in the figure.
In the wavelength region of μ, P wave component; transmittance 85 ± 1% 1 reflectance 15 ± 1% S wave component; transmittance 4 ± 1% 1 reflectance 96 ± 1%, stoichiometric MgF! Design optical characteristics (curves Cp, Cm
) was changed to a value close to .

また性能の均一化、確度が良好となる。また再現性もよ
い。
In addition, the performance becomes more uniform and the accuracy becomes better. It also has good reproducibility.

比較例(1) 実施例1と同材料、層構成で、導入ガスを、5ub−I
I ; O,ガス、2X10−’mbarMgF1 ;
 Arガス、3X1G−’mbarとした外は全く同様
にして接合プリズムを作成し同様に評価し、第3図に併
示した(曲線B□ns)。
Comparative Example (1) The same material and layer configuration as in Example 1 were used, and the introduced gas was 5ub-I.
I; O, gas, 2X10-'mbarMgF1;
A bonded prism was prepared in exactly the same manner except that Ar gas and 3×1 G-'mbar were used and evaluated in the same manner, and the results are also shown in FIG. 3 (curve B□ns).

P波成分;透過率90±3%、反射率lO±3%S波成
分;透過率2±3%、反射率98±3%実施例に対して
、透過率においてP波成分が増加し、S波成分が減少す
る。
P wave component: transmittance 90 ± 3%, reflectance lO ± 3% S wave component: transmittance 2 ± 3%, reflectance 98 ± 3% Compared to the example, the P wave component increases in transmittance, The S wave component decreases.

化学量論的MgF!を用いた設計値から大きく偏り、ま
た性能値確度も低下し、また再現性も低下した。
Stoichiometric MgF! There was a large deviation from the design value using , the accuracy of the performance value decreased, and the reproducibility also decreased.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明に係る真空蒸着装置の概要図、第2図は
本発明に係る高、低屈折率層コーテングを有する接合プ
リズムの断面図、第3図は前記接合プリズムのP、S波
成分の光透過率−波長の関係図である。
FIG. 1 is a schematic diagram of a vacuum evaporation apparatus according to the present invention, FIG. 2 is a cross-sectional view of a bonded prism having high and low refractive index layer coatings according to the present invention, and FIG. 3 is a diagram showing P and S waves of the bonded prism. It is a relationship diagram of the light transmittance of a component - wavelength.

Claims (3)

【特許請求の範囲】[Claims] (1)弗化マグネシウムの真空蒸着を酸素ガス又は酸素
と不活性ガスの混合ガスの存在下に行うことを特徴とす
る蒸着法。
(1) A vapor deposition method characterized in that vacuum vapor deposition of magnesium fluoride is performed in the presence of oxygen gas or a mixed gas of oxygen and an inert gas.
(2)高屈折率層及び低屈折率層の累積真空蒸着におい
て、酸素ガス又は酸素と不活性ガスの混合ガスの存在下
に弗化マグネシウム低屈折率層を形成することを特徴と
する蒸着法。
(2) A vapor deposition method characterized by forming a magnesium fluoride low refractive index layer in the presence of oxygen gas or a mixed gas of oxygen and an inert gas in the cumulative vacuum deposition of the high refractive index layer and the low refractive index layer. .
(3)前記高屈折率層として酸化チタン、酸化プラセオ
ジム又は、酸化チタンと酸化プラセオジウムの混合物を
主成分とする材料を用いる請求項2に記載の蒸着法。
(3) The vapor deposition method according to claim 2, wherein a material containing titanium oxide, praseodymium oxide, or a mixture of titanium oxide and praseodymium oxide as a main component is used as the high refractive index layer.
JP32188089A 1989-12-12 1989-12-12 Vapor deposition method Pending JPH03183761A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32188089A JPH03183761A (en) 1989-12-12 1989-12-12 Vapor deposition method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32188089A JPH03183761A (en) 1989-12-12 1989-12-12 Vapor deposition method

Publications (1)

Publication Number Publication Date
JPH03183761A true JPH03183761A (en) 1991-08-09

Family

ID=18137437

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32188089A Pending JPH03183761A (en) 1989-12-12 1989-12-12 Vapor deposition method

Country Status (1)

Country Link
JP (1) JPH03183761A (en)

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