JPH03185864A - Image reading device - Google Patents
Image reading deviceInfo
- Publication number
- JPH03185864A JPH03185864A JP1325707A JP32570789A JPH03185864A JP H03185864 A JPH03185864 A JP H03185864A JP 1325707 A JP1325707 A JP 1325707A JP 32570789 A JP32570789 A JP 32570789A JP H03185864 A JPH03185864 A JP H03185864A
- Authority
- JP
- Japan
- Prior art keywords
- light
- transparent
- image reading
- substrate
- holding member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔技術分野〕
本発明は、画像読取装置に関する。とくに本発明は、完
全密着型等倍画像読取装置とりわけ、センサ基板の巾が
極めて狭いタイプの完全密着型等倍画像読取装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to an image reading device. In particular, the present invention relates to a fully contact type 1x image reading device, and particularly to a fully contact type 1x image reading device of a type in which the width of the sensor substrate is extremely narrow.
等倍センサの低コスト化を目指す方向として、基板の狭
巾化が考えられる。多数本の等倍センサ基板を大面積の
基板により一括して製造することで、−本あたりの製造
装置コストと、材料費を低減することができるからであ
る。基板中は狭ければ狭いほど一本あたりの基板コスI
〜は低下する。One way to reduce the cost of full-size sensors is to make the substrate narrower. This is because by manufacturing a large number of same-size sensor substrates at once using a large-area substrate, it is possible to reduce the manufacturing equipment cost and material cost per unit. The narrower the inside of the board, the lower the board cost I per board.
~ decreases.
しかしながら、特に、センサ面に画像が密着した状態で
1画信号の読み取りを行なう。いわゆる完全密着型等倍
センサの場合、等倍結像素子が不要となり、低コスト化
がはかれるという利点を有するものの、基板中が狭くな
ることによって、必要な入射光量を維持したまま、確実
な基板保持を行なうことが困難となるため、従来技術で
は、S/Nの低下が生じてしまうという問題点を有して
いた。第1図に従来例を示す。However, in particular, one image signal is read with the image in close contact with the sensor surface. In the case of a so-called full-contact type 1-magnification sensor, an 1-magnification imaging element is not required and the cost can be reduced. Since it becomes difficult to maintain the signal, the conventional technique has a problem in that the S/N ratio decreases. FIG. 1 shows a conventional example.
透明基板上に光電変換素子と入射光が通過する窓を有す
る遮光層(図示せず)と、透明保護層を有する等倍セン
サ基板は、通常金属からなる遮光性保持部材によって保
持されており、遮光性保持部材には入射光が通過できる
スリットが開けられている。第1図Aに示したように基
板巾が充分広い場合には問題にならないが、第1図Bに
示すように基板巾が狭くなると、基板を確実に保持する
ためにスリット巾も狭くならざるを得ない。スリット巾
が狭くなった分、入射光量が減少し、信号出力Sが低下
するため、S/Nが低下する。第2図に信号出力Sとス
リット巾との関係を示す。スリット巾1+m+以上では
。A light-shielding layer (not shown) having a photoelectric conversion element and a window through which incident light passes on a transparent substrate, and a same-size sensor substrate having a transparent protective layer are usually held by a light-shielding holding member made of metal, The light-shielding holding member has a slit through which incident light can pass. This is not a problem if the substrate width is sufficiently wide as shown in Figure 1A, but as the substrate width becomes narrower as shown in Figure 1B, the slit width must also become narrower in order to securely hold the substrate. I don't get it. As the slit width becomes narrower, the amount of incident light decreases and the signal output S decreases, resulting in a decrease in S/N. FIG. 2 shows the relationship between the signal output S and the slit width. When the slit width is 1+m+ or more.
信号出力Sはほとんど変化しないが1圓以下では急激に
減少し、0.5mnのとき、Sは1/2まで低下してし
まう。The signal output S hardly changes, but sharply decreases below 1 circle, and at 0.5 mn, S decreases to 1/2.
本発明の目的は、前記の問題点を解決しようとするもの
で、基板巾の狭い等倍センサにおいても確実な保持が可
能で、かつS/Nの劣化のむい実装方式を提案しようと
するものである。The purpose of the present invention is to solve the above-mentioned problems, and to propose a mounting method that can securely hold even a same-size sensor with a narrow board width and prevent S/N deterioration. It is.
本発明は、透明基板、該透明基板上に形成された採光窓
を有する遮光層、該遮光層上に形成された光電変換素子
列を少くとも有するセンサ基板と該センサ基板を支持す
るための保持部材よりなる画像読取装置において、前記
保持部材の必要個所を透明材料で構成することを特徴と
する画像読取装置に関する。The present invention provides a transparent substrate, a light blocking layer formed on the transparent substrate having a lighting window, a sensor substrate having at least an array of photoelectric conversion elements formed on the light blocking layer, and a holder for supporting the sensor substrate. The present invention relates to an image reading device comprising a member, wherein necessary portions of the holding member are made of a transparent material.
前記光電変換素子が直接画像、たとえば原稿に接触する
と素子を痛めるので、素子と画像の間には何らかの離間
層があることが好ましい。If the photoelectric conversion element directly contacts an image, for example, a document, the element will be damaged, so it is preferable that there is some sort of spacing layer between the element and the image.
離間層は単なる空間でもよいが、5L−C,5i−N、
5L−0,微結晶化Cなどの透明薄膜あるいは石英、プ
ラスチックス等の透明薄板材料を使用してもよい。薄膜
の場合は通常の成膜方法を使用すればよく、薄板材料の
場合は透明接着剤を使用する。The spacing layer may be a mere space, but it may be 5L-C, 5i-N,
A transparent thin film such as 5L-0 or microcrystalline C or a transparent thin plate material such as quartz or plastic may be used. In the case of a thin film, a normal film forming method may be used, and in the case of a thin plate material, a transparent adhesive may be used.
第3図にもとづき、以下に詳細な説明を行なう。A detailed explanation will be given below based on FIG.
透明基板1は石英、バイレクス等のガラス、プラスチッ
クスなどからなる。透明基板1上にはCr、An等から
なる遮光層2が真空蒸着法、スパッタリング法等により
、0.1μ■から0.5μmの厚さで形成された後、読
み取り素子数とほぼ同数の採光窓4がエツチング法によ
って形成される(第5図)。その後、遮光層2と他電極
材料とのショートを防ぐために、全面に透明絶縁膜が形
成される。透明絶縁膜としては、5i−N。The transparent substrate 1 is made of quartz, glass such as virex, plastics, or the like. A light-shielding layer 2 made of Cr, An, etc. is formed on the transparent substrate 1 to a thickness of 0.1 μm to 0.5 μm by vacuum evaporation, sputtering, etc., and then a light shielding layer 2 of approximately the same number as the number of reading elements is formed. A window 4 is formed by an etching method (FIG. 5). Thereafter, a transparent insulating film is formed on the entire surface in order to prevent short circuit between the light shielding layer 2 and other electrode materials. The transparent insulating film is 5i-N.
5i−0,5i−C,微結晶化C等をCVD法などによ
って形成したものが用いられる。膜厚は。5i-0, 5i-C, microcrystalline C, etc. formed by CVD or the like are used. What is the film thickness?
0.5〜3μmが好適である。その後、第5図に示した
ように採光窓4と一定距離を有する位置に画像読取素子
として、光電変換素子3を形成する。これは、アモーフ
ァスシリコンを主体とする膜の上下に電極を設けたもの
が好ましく用いられ、通常のCVD等による製膜、フォ
トリソグラフィー法によるエツチングを通して微細加工
される。なお、光電変換素子3の下部電極として、遮光
層を用いることも可能である。0.5 to 3 μm is suitable. Thereafter, as shown in FIG. 5, a photoelectric conversion element 3 is formed as an image reading element at a position having a certain distance from the lighting window 4. A film mainly made of amorphous silicon with electrodes provided above and below is preferably used, and is microfabricated through film formation by conventional CVD and etching by photolithography. Note that it is also possible to use a light shielding layer as the lower electrode of the photoelectric conversion element 3.
以上のように画像読取デバイスが形成された後、保護層
5として、5〜50μmの厚さの透明耐摩耗性膜、例え
ば5i−C,5L−N、5i−0゜微結晶化Cなどの膜
をCVD法によって全面に形成したり、30〜70μm
の厚さの薄板ガラスを透明接着剤により全面に接着して
センサ基板工程を終了する。After the image reading device is formed as described above, a transparent wear-resistant film with a thickness of 5 to 50 μm, such as 5i-C, 5L-N, 5i-0° microcrystalline C, etc., is used as the protective layer 5. A film is formed on the entire surface by CVD method, or a film is formed with a thickness of 30 to 70 μm.
The sensor substrate process is completed by gluing a thin glass sheet with a thickness of .
次にこのようにして得られたセンサ基板を透明保持部材
7上に接着する(第3図、第4図)。Next, the sensor substrate thus obtained is adhered onto the transparent holding member 7 (FIGS. 3 and 4).
透明保持部材および透明接着剤は、透明基板と同程度の
屈折率(1,4〜1.5)を有するものが好ましく用い
られる。The transparent holding member and the transparent adhesive preferably have a refractive index (1.4 to 1.5) comparable to that of the transparent substrate.
透明保持部材として特に望ましい材料は1石英、パイレ
クス等のガラスおよびプラスチックスである。Particularly desirable materials for the transparent holding member are glass such as quartz, Pyrex, and plastics.
さらに本発明においては、第4図に示すように保持部材
に光が入射する部分および透明基板上の光感応素子が乗
る面以外を遮光することが好ましい。遮光手段としては
、遮光性の保持部材、例えばAQやSUS等の金属材料
で保持したり、遮光性の充てん材に埋めたり、遮光性接
着剤を塗布するなどの方法やそれらの組合せ方式を用い
て遮光性保持部材6とする。Further, in the present invention, as shown in FIG. 4, it is preferable to shield the holding member from light except for the portion where light enters and the surface on the transparent substrate on which the photosensitive element is mounted. As a light-shielding means, methods such as holding with a light-shielding holding member such as a metal material such as AQ or SUS, burying in a light-shielding filler, applying a light-shielding adhesive, or a combination thereof are used. A light-shielding holding member 6 is obtained.
以上に述べた構成によりセンサ基板山分の光の通路が確
保できるのでセンサ基板巾が狭い場合でも確実にセンサ
基板保持ができ、外部へのユニットの取り付けも容易に
なるとともに、透明保持部材の使用により入射光量が充
分確保できるので信号出力Sも低下せず、かつ外部から
の迷光も遮断することができることから、S/Nの低下
のない完全密着型等倍センサが提供できる。The above-mentioned configuration makes it possible to secure a light path for the sensor board, making it possible to securely hold the sensor board even when the sensor board width is narrow, making it easy to attach the unit externally, and using a transparent holding member. Since a sufficient amount of incident light can be ensured, the signal output S will not decrease, and stray light from the outside can also be blocked, making it possible to provide a fully contact type 1x sensor with no decrease in S/N.
第1図AおよびBは、いずれも従来タイプの画像読取装
置の断面図を示し、第1図Aは、センサ基板中が広い場
合であり、第1図Bは、センサ基板中が狭い場合を示す
。第2図は、第1図におけるスリット巾の大小が信号出
力(相対値)にどのような影響を与えているかを示すグ
ラフである。第3図は1本発明の画像読取袋装置の1例
を示す断面図、第4図は、本発明の画像読取装置の変形
例を示す断面図である。第5図は、本発明の画像読取装
置の上面図を示す。
1・・・透明基板 2・・・遮光層3・・・光電
変換素子 4・・・採光窓5・・・透明保護層
7・・・透明保持部材
9・・・スリット
6・・・遮光性保持部材
8・・・透明接着剤層
11・・・原稿
第
図
スリット@ (mml
第4
図
第
5図1A and 1B are cross-sectional views of conventional image reading devices. FIG. 1A shows a case where the sensor board is wide, and FIG. 1B shows a case where the sensor board is narrow. show. FIG. 2 is a graph showing how the size of the slit width in FIG. 1 affects the signal output (relative value). FIG. 3 is a sectional view showing an example of the image reading bag device of the present invention, and FIG. 4 is a sectional view showing a modified example of the image reading device of the present invention. FIG. 5 shows a top view of the image reading device of the present invention. 1... Transparent substrate 2... Light blocking layer 3... Photoelectric conversion element 4... Lighting window 5... Transparent protective layer 7... Transparent holding member 9... Slit 6... Light blocking property Holding member 8...Transparent adhesive layer 11...Document figure slit @ (mml Figure 4 Figure 5
Claims (1)
る遮光層、該遮光層上に形成された光電変換素子列を少
くとも有するセンサ基板と該センサ基板を支持するため
の保持部材よりなる画像読取装置において、前記保持部
材の必要個所を透明材料で構成することを特徴とする画
像読取装置。1. A transparent substrate, a light-shielding layer having a lighting window formed on the transparent substrate, a sensor substrate having at least an array of photoelectric conversion elements formed on the light-shielding layer, and a holding member for supporting the sensor substrate. An image reading device characterized in that necessary portions of the holding member are made of a transparent material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1325707A JPH03185864A (en) | 1989-12-15 | 1989-12-15 | Image reading device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1325707A JPH03185864A (en) | 1989-12-15 | 1989-12-15 | Image reading device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03185864A true JPH03185864A (en) | 1991-08-13 |
Family
ID=18179809
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1325707A Pending JPH03185864A (en) | 1989-12-15 | 1989-12-15 | Image reading device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03185864A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009139029A1 (en) * | 2008-05-12 | 2009-11-19 | パイオニア株式会社 | Self-luminous sensor device and method for manufacturing the same |
-
1989
- 1989-12-15 JP JP1325707A patent/JPH03185864A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009139029A1 (en) * | 2008-05-12 | 2009-11-19 | パイオニア株式会社 | Self-luminous sensor device and method for manufacturing the same |
| JPWO2009139029A1 (en) * | 2008-05-12 | 2011-09-08 | パイオニア株式会社 | Self-luminous sensor device and manufacturing method thereof |
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