JPH03185869A - Semiconductor integrated circuit device - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for hybrid fabrication of semiconductor integrated circuit devices and molecular element integrated circuit devices.

[Prior Art] Conventionally, semiconductor integrated circuit devices and molecular element integrated circuit devices have been manufactured and developed independently, and none have been hybridized within a single substrate.

[Problems to be Solved by the Invention] According to the above-mentioned prior art, there is a problem in that it is difficult to hybridize a semiconductor integrated circuit device and a molecular element integrated circuit device that requires processing at the molecular level.

It is an object of the present invention to solve the problems of the prior art and to provide a new structure that easily hybridizes a semiconductor integrated circuit device and a molecular element integrated circuit device within one substrate.

[Means for Solving the Problems] In order to solve the above problems, the present invention relates to a semiconductor integrated circuit device, in which a molecular element integrated circuit is formed in a limited area on the surface of the semiconductor integrated circuit device, and the molecular element integrated circuit is A means is taken to connect a molecular electrode made of polyacetylene or the like with a metal electrode formed on the semiconductor integrated circuit device.

[Example] Hereinafter, the present invention will be explained in detail with reference to Examples.

1 to 3 are cross-sectional views of essential parts of a hybrid integrated device in which a molecular element integrated circuit device is formed on the surface of a semiconductor integrated circuit substrate according to an embodiment of the present invention.

In FIG. 1, Set substrate 11. Diffusion layer 12. Gate oxide film 15. The 310. [A molecular device integrated circuit device 17 is formed in the area opened in 15, and the molecular device integrated circuit device 17 includes:
Each molecule has a function such as memory retention or switch operation. A functional element 18 is connected to molecular electrodes 19 and 19' made of polyacetylene, etc., and insulating molecules are embedded. The molecular electrodes 19 and 19'
is Pt formed on the surface of the semiconductor integrated circuit device substrate.
, At, Ti, W, Si, etc., metal electrodes 16 and 1
6' and the diffusion layer 12 are also connected to a wiring layer.

In FIG. 2, a Si substrate 21. Diffusion layer 22. Gate oxide film 23. A molecular element integrated circuit device 27 is formed in a limited area on the surface of the 5iO1 film 250 of a semiconductor integrated circuit device substrate consisting of a gate electrode 24, a sin film 25, etc., and the molecular element integrated circuit device 27 has a molecular functional element 28. The molecular electrodes 29 and 29' are made of insulating molecules, polyacetylene, etc., and the molecular electrodes 29 and 29' are connected to metal electrodes 26 and 26' formed on the surface of the semiconductor integrated circuit board, etc. It consists of being done. It goes without saying that the molecular element integrated circuit device 27 may be formed on nine functional elements such as transistors formed on a semiconductor integrated circuit device substrate.

In FIG. 5, 81 substrates 51. Diffusion layer 52j gate blur d
The molecular element integrated circuit device 3 is formed on the metal electrode 37 formed in series with the diffusion layer 52 of the semiconductor integrated circuit device substrate consisting of the i, sse gate electrode 54 and the SiO, film 55.
7 is formed in a region surrounded by an insulating film 40, and the molecular element integrated circuit device is composed of a molecular functional element 38, insulating molecules, molecular electrodes 39 and 39', etc.
9 is connected to the underlying metal electrode 5Ii 56, and the molecular electrode 59' is connected to the metal electrode 36' formed on the upper part of the insulating film 40.

[Effects of the Invention] The present invention has the effect that it is possible to easily construct a hybrid molecular element integrated circuit device by integrating each molecule on a semiconductor integrated circuit device substrate formed by a conventional technique. .

[Brief explanation of drawings]

1 to 3 are cross-sectional views of essential parts of a hybrid integrated device in which a molecular element integrated circuit device is formed on the surface of a semiconductor integrated circuit substrate, showing an embodiment of the present invention. t1*21. ! M...Si substrate 12 22,5
2...Diffusion layer 15.25.55...Gate oxide film 4.24.
34... Gate electrode 5.25, 55...
・slo, membrane 6.16', 26.26',
56. '56'...Metal electrode7.27.57...Molecular element integrated circuit device8.
28.58...Molecular functional element 9.1.9',
29.29', 59.59'...Molecular electrode 0......
More than insulation film

Claims (1)

[Claims] A molecular element integrated circuit is formed in a limited area on the surface of a semiconductor integrated circuit device, and a molecular electrode made of polyacetylene or the like of the molecular element integrated circuit is connected to a metal electrode formed on the semiconductor integrated circuit device. A semiconductor integrated circuit device characterized by comprising: