JPH03196523A - Polisher having high accuracy - Google Patents
Polisher having high accuracyInfo
- Publication number
- JPH03196523A JPH03196523A JP1337886A JP33788689A JPH03196523A JP H03196523 A JPH03196523 A JP H03196523A JP 1337886 A JP1337886 A JP 1337886A JP 33788689 A JP33788689 A JP 33788689A JP H03196523 A JPH03196523 A JP H03196523A
- Authority
- JP
- Japan
- Prior art keywords
- porous ceramic
- ceramic layer
- wax
- wafer
- parallelism
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分計〕
この発明は高精度研磨装置に関し、特にウェハ平行度調
整に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application] The present invention relates to a high-precision polishing apparatus, and particularly to wafer parallelism adjustment.
第２図は従来の高精度研磨装置を示す断面図で、図ζこ
おいて、（Ｉ）はウェハ、（２）はオプティカル・フラ
ット（以下０７Ｆと呼ぶ）の主部をなす多孔質セラミッ
クス層、（４）は反射鏡、（５）はシリング、（６）は
角度ｍ整ネｔ、 （Ｘ ／ Ｙ） 、 （７１はばね、
（８）はウェハ取付台、（９）は平行度を調整するオー
トコリメータ、叫はウェハを研磨するガラス板である。Figure 2 is a cross-sectional view of a conventional high-precision polishing device. , (4) is the reflector, (5) is the shilling, (6) is the angle m adjustment net t, (X / Y), (71 is the spring,
(8) is a wafer mount, (9) is an autocollimator for adjusting parallelism, and (9) is a glass plate for polishing the wafer.
次に動作について説明する。高精度研磨装置はオートコ
リメータ（９）により光学的にウェハ（１）の平行度を
調整、検査をしながら研磨する装置である。Next, the operation will be explained. The high-precision polishing device is a device that optically adjusts the parallelism of the wafer (1) using an autocollimator (9) and polishes it while inspecting it.
０７Ｆに対し平行にウェハ（１）を張り付け、それをウ
ェハ取付台（８）に固定する。ウェハ取付台（８）の中
心には円柱状の空洞があり、この空洞を通してオートコ
リメータ（９）から発した光が０／Ｆに当たり、その反
射してきた光の位置で０７Ｆの平行度を調整する。この
際、０７Ｆとウェハ（１）は平行でなければならないが
、高精度に平行にするにはＯ／Ｆを多孔質セラミック製
のものとし、Ｏ／Ｆの上にヒータで加熱しながらワック
スを塗り、完全にワックスが溶けたらウェハ（１）をの
せるようにする。A wafer (1) is pasted parallel to 07F and fixed to the wafer mount (8). There is a cylindrical cavity in the center of the wafer mount (8), and the light emitted from the autocollimator (9) hits 0/F through this cavity, and the parallelism of 07F is adjusted by the position of the reflected light. . At this time, 07F and wafer (1) must be parallel, but in order to make them parallel with high precision, the O/F should be made of porous ceramic, and wax should be applied to the O/F while heating it with a heater. Apply the wax, and when the wax has completely melted, place the wafer (1) on it.
その時、第３図のように多孔質セラミック層（２）でで
きたＯ／Ｆにワックスがしみ込み、ウェハとＯ／Ｆとの
間のワックスが極力抑えられ、ワックス厚を薄く均一、
且、平行に張り付けることができる。また、裏面はワッ
クスがしみ出さずオートコリメータ（９）からの光を容
易に反射できるように、熱膨張率が多孔質セラミック層
（２）と同程度の反射鏡と成り得る材料（金属、ガラス
、セラミックｅｔｃを張り付け、ワックスが裏面にしみ
出さず、両わきからしみ出す構造となっている。At that time, as shown in Figure 3, the wax soaks into the O/F made of the porous ceramic layer (2), and the wax between the wafer and the O/F is suppressed as much as possible, making the wax thin and uniform.
Moreover, they can be attached in parallel. In addition, the back surface is made of a material (metal, glass, , ceramic, etc., so that the wax does not seep out from the back side, but from the sides.
従来の高精度研磨装置（ま以上のように構成されていた
ので、０７Ｆは使用回数が増えてくると、ワックスが第
３図の多孔質セラミ９ク層（２）内に停滞してしまい停
滞したワックスの為ワックスのしみ込みが悪くなり、ウ
ェハをＯ／Ｆに平行に張ることができなくなりつ上ハの
平行度の調整が困難であるという問題点があった。Conventional high-precision polishing equipment (as it was configured as described above), as the number of times the 07F is used increases, the wax becomes stagnant within the porous ceramic layer (2) in Figure 3. There was a problem in that the wax penetrated poorly and the wafer could not be stretched parallel to the O/F, making it difficult to adjust the parallelism of the upper wafer.
この発明は上記のような問題点を解消するためになされ
たもので、０７Ｆのワックスのしみ込みを良くシ、オー
トコリメータによる平行度の調整を改善ずろことを目的
とする。This invention was made in order to solve the above-mentioned problems, and aims to improve the penetration of 07F wax and improve parallelism adjustment using an autocollimator.
この発明に係る高精度研磨装置は、Ｏ／Ｆを３層に重ね
合わせた構造とし、従来の多孔質セラミック層とワック
スをしみ込まずことのできない気密質なものでできた反
射鏡との間に、従来の多孔質セラミック層よりも更に目
の粗い多孔質セラミックス層を設けた構造にしたもので
ある。The high-precision polishing device according to the present invention has a structure in which the O/F is stacked in three layers, with a conventional porous ceramic layer and a reflecting mirror made of an airtight material that cannot be impregnated with wax. , which has a structure in which a porous ceramic layer is provided with a coarser opening than the conventional porous ceramic layer.
この発明における高精度研磨装置は、従来の多孔質セラ
ミック層と反射鏡との間に、目の粗い多孔質セラミック
層を設けたので、ワックスが両わきに流れ出やすくなり
、Ｏ／Ｆの使用回数を増やしワックスの使用量が増えて
もワックスのしみ込みは悪くならな（なる。In the high-precision polishing device of this invention, a coarse porous ceramic layer is provided between the conventional porous ceramic layer and the reflecting mirror, so wax easily flows out to both sides, and the number of times the O/F is used is Even if you increase the amount of wax used, the penetration of wax will not get worse.
以下、この発明の一実施例を図について説明する。第１
図において、（１）ばウェハ、（２）は０７Ｆの主部を
なしワックスをしみ込ませる乙とのできる多孔質セラミ
ック層、（３）は多孔質セラミック層（２）よりも更に
目の粗い多孔質セラミック層、（４）はワックスがしみ
込まずオートコリメータがら発した光を反射することの
できる反射鏡である。これら多孔質セラミックＮ（２１
、目の粗い多孔質セラミック層（３）２反射鏡（４）に
よってＯ／Ｆを形成する。An embodiment of the present invention will be described below with reference to the drawings. 1st
In the figure, (1) is the wafer, (2) is the porous ceramic layer that forms the main part of 07F and is impregnated with wax, and (3) is the porous ceramic layer with even coarser pores than (2). The ceramic layer (4) is a reflective mirror that can reflect the light emitted from the autocollimator without being soaked with wax. These porous ceramic N(21
, an O/F is formed by a coarse porous ceramic layer (3) and two reflecting mirrors (4).
次に、本発明に係る動作につき説明する。本実施例では
第１図のように０／Ｆがワックスをしみ込まず為の多孔
質セラミック層（２）と、これよりも更に目の粗い多孔
質セラミック層（３）と、オートコリメータからの光を
反射させる反射強（４）に分れた３ｒｆ！構造となって
おり、従来のもののように本装置を使用しても、Ｏ／Ｆ
内にワックスが停滞せず、目の粗い多孔質セラミックス
層（３）から両側にワックスは流れ出てしまう為、本装
置の使用回数が増え、ワックスの使用量が増えても、ワ
ックスのしみ込みは悪くならず、常にＯ／Ｆにウェハを
平行に張れる為、ウェハ（１）の平行度の調整が容易に
できるようになる。Next, the operation according to the present invention will be explained. In this example, as shown in Fig. 1, 0/F has a porous ceramic layer (2) to prevent wax from penetrating, a porous ceramic layer (3) with a coarser mesh than this layer, and a light beam from an autocollimator. 3RF divided into 4 strong reflections! structure, even if this device is used like a conventional one, the O/F
The wax does not stagnate within the interior and flows out from the coarse porous ceramic layer (3) on both sides, so even if the device is used more often and the amount of wax used increases, the wax will not seep in. Since the wafer can always be stretched parallel to the O/F without any problems, the parallelism of the wafer (1) can be easily adjusted.
尚、上記実施例ではＯ／Ｆを３層構造とした場合を示し
たが、４層以上の構造であっても同様の効果が得られる
ことは言うまでもない。In the above embodiment, the O/F has a three-layer structure, but it goes without saying that the same effect can be obtained even if the O/F has a structure of four or more layers.
以上のようにこの発明によれば、Ｏ／Ｆを３層構造とし
たので、常にウェハを０７Ｆ（こ平行に張れるようにな
る為、精度の高い高精度研磨装置が得られろ効果がある
。As described above, according to the present invention, since the O/F has a three-layer structure, the wafer can always be stretched parallel to the 07F (07F), so that a highly accurate polishing apparatus can be obtained.
第１図は乙の発明の一実施例による高精度研磨装置の０
７Ｆを示す断面図、第２図は従来の高精度研磨装置を示
す断面側面図、第３図は従来の高精度研磨装置のＯ／Ｆ
を示す断面図である。
図において、（１）はウェハ、（２）は多孔質セラミッ
ク層、（３）は目の粗い多孔質セラミック層、＋４１は
反射鏡を示す。
なお、図中、同一符号は同一、又は相当部分を示す。Figure 1 shows a high-precision polishing device according to an embodiment of the invention of B.
A cross-sectional view showing 7F, Fig. 2 is a cross-sectional side view showing a conventional high-precision polishing device, and Fig. 3 is an O/F of a conventional high-precision polishing device.
FIG. In the figure, (1) is a wafer, (2) is a porous ceramic layer, (3) is a coarse porous ceramic layer, and +41 is a reflecting mirror. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.
Claims (1)
ル・フラット、上記オプティカル・フラットの多孔質セ
ラミック層より更に目の粗い多孔質セラミック層を、反
射鏡と多孔質セラミック層との間に備えたことを特徴と
する高精度研磨装置。An optical flat having a reflecting mirror and comprising a porous ceramic layer, a porous ceramic layer having a coarser mesh than the porous ceramic layer of the above-mentioned optical flat is provided between the reflecting mirror and the porous ceramic layer. Features: High-precision polishing equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1337886A JPH03196523A (en) | 1989-12-25 | 1989-12-25 | Polisher having high accuracy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1337886A JPH03196523A (en) | 1989-12-25 | 1989-12-25 | Polisher having high accuracy |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03196523A true JPH03196523A (en) | 1991-08-28 |
Family
ID=18312923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1337886A Pending JPH03196523A (en) | 1989-12-25 | 1989-12-25 | Polisher having high accuracy |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03196523A (en) |
-
1989
- 1989-12-25 JP JP1337886A patent/JPH03196523A/en active Pending
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