JPH03196626A - Semiconductor wafer cleaning equipment - Google Patents
Semiconductor wafer cleaning equipmentInfo
- Publication number
- JPH03196626A JPH03196626A JP33698789A JP33698789A JPH03196626A JP H03196626 A JPH03196626 A JP H03196626A JP 33698789 A JP33698789 A JP 33698789A JP 33698789 A JP33698789 A JP 33698789A JP H03196626 A JPH03196626 A JP H03196626A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- cleaning
- cleaned
- electrode
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 71
- 238000004140 cleaning Methods 0.000 title claims abstract description 58
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 230000005611 electricity Effects 0.000 claims abstract description 10
- 230000003068 static effect Effects 0.000 claims abstract description 10
- 230000003472 neutralizing effect Effects 0.000 claims abstract description 3
- 239000000428 dust Substances 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 9
- 235000012431 wafers Nutrition 0.000 description 63
- 230000032258 transport Effects 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007786 electrostatic charging Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
(1)発明の目的
[産業上の利用分野]
本発明は、ローダから受取った半導体ウェーハを洗浄室
で回転せしめつつ洗浄水によって洗浄し乾燥したのちア
ンローダに対し送出してなる半導体ウェーハ洗浄装置に
関し、特に、洗浄室の出口部に対して電極を配設するこ
とにより洗浄済の半導体ウェーハに発生された静電気を
中和してる。Detailed Description of the Invention (1) Purpose of the Invention [Field of Industrial Application] The present invention provides a semiconductor wafer received from a loader, which is rotated in a cleaning chamber, cleaned with cleaning water, dried, and then sent to an unloader. In this semiconductor wafer cleaning apparatus, in particular, an electrode is disposed at the outlet of the cleaning chamber to neutralize static electricity generated in the cleaned semiconductor wafer.
[従来の技術]
従来、この種の半導体ウェーハ洗浄装置としては、ロー
ダから受取った半導体ウェーハな洗浄室で1枚ずつ回転
保持体に保持して回転せしめつつ洗浄水によって洗浄し
乾燥したのちアンローダに向けて送出してなるものが提
案されていた。[Prior Art] Conventionally, in this type of semiconductor wafer cleaning equipment, semiconductor wafers received from a loader are held one by one on a rotating holder in a cleaning chamber and rotated, cleaned with cleaning water, dried, and then transferred to an unloader. It was proposed that the product be sent to the United States.
[解決すべき問題点]
しかしながら、従来の半導体ウェーハ洗浄装置では、半
導体ウェーハが回転保持体に保持された状態で回転せし
められつつ洗浄され乾燥されていたので、fil半導体
ウェーハに静電気が発生されてしまう欠点があり、ひい
ては(iil洗浄室からアンローダに向けて送出された
洗浄済の半導体ウェーハにダストかけ着されてしまう欠
点があり、結果的に1iiil洗浄効果を損う欠点があ
った。[Problems to be Solved] However, in conventional semiconductor wafer cleaning equipment, the semiconductor wafer is held in a rotary holder and rotated while being cleaned and dried, so static electricity is generated on the fil semiconductor wafer. This has the disadvantage that dust is deposited on the cleaned semiconductor wafers sent from the cleaning chamber to the unloader, and as a result, the cleaning effect of step 1iii is impaired.
そこで1本発明は、これらの欠点を除去すべく、洗浄室
の出口部に対し1を極を配設して洗浄清の半導体ウェー
ハに発生された静電気を中和してなる半導体ウェーハ洗
浄装置を提供せんとするものである。In order to eliminate these drawbacks, the present invention provides a semiconductor wafer cleaning apparatus in which a pole is disposed at the outlet of the cleaning chamber to neutralize static electricity generated on semiconductor wafers in the cleaning solution. This is what we intend to provide.
(2)発明の構成
E問題点の解決手段]
本発明により提供される問題点の解決手段は、[ローダ
から受取った半導体ウェー八を洗浄室で回転せしめつつ
洗浄水によって洗浄し乾燥したのちアンローダに向けて
送出してなる半導体ウェーハ洗浄装置において、洗浄室
の出口部に対して電極を配設することにより洗浄済の半
導体ウェーハに発生された静電気を中和してなることを
特徴とする半導体ウェーハ洗浄装置」
である。(2) Composition of the Invention E Means for Solving Problem E] The means for solving the problem provided by the present invention is as follows: [The semiconductor wafer received from the loader is rotated in a cleaning chamber, washed with cleaning water, dried, and then unloaded. A semiconductor wafer cleaning apparatus for sending semiconductor wafers to a semiconductor wafer, characterized in that static electricity generated in cleaned semiconductor wafers is neutralized by disposing an electrode at the outlet of a cleaning chamber. wafer cleaning equipment.
[作用]
本発明にかかる半導体ウェーハ洗浄装置は、上述のr問
題点の解決手段]に明示した構成を有しているので、
(i)洗浄済の半導体ウェーハから静電気な除去する作
用
をなし、ひいては
fiil洗浄済の半導体ウェーハに対しダストが付着す
ることを防止する作用
をなし、結果的に
fiii)洗浄効果を維持する作用
をなす。[Function] The semiconductor wafer cleaning apparatus according to the present invention has the configuration specified in the above-mentioned solution to problem r], so that: (i) it functions to remove static electricity from cleaned semiconductor wafers; In turn, it acts to prevent dust from adhering to the semiconductor wafer that has been filtrated, and as a result fiii) maintains the cleaning effect.
[実施例]
次に、本発明にかかる半導体ウェーハ洗浄装置について
、その好ましい実施例を挙げ、添付図面を参照しつつ、
具体的に説明する。しかしながら、以下に説明する実施
例は、本発明の理解を容易化ないし促進化するために記
載されるものであって、本発明を限定するために記載さ
れるものではない。換言すれば、以下に説明される実施
例において開示される各要素は、本発明の精神ならびに
技術的範囲に属する全ての設計変更ならびに均等物置換
を含むものである。[Example] Next, a preferred example of the semiconductor wafer cleaning apparatus according to the present invention will be described, and with reference to the attached drawings,
I will explain in detail. However, the examples described below are described to facilitate or accelerate understanding of the present invention, and are not described to limit the present invention. In other words, each element disclosed in the embodiments described below includes all design changes and equivalent substitutions that fall within the spirit and technical scope of the present invention.
工匡扛区皿五説里り
第1図は、本発明の半導体ウェーハ洗浄装置の一実施例
を示すための構成図である。FIG. 1 is a block diagram showing one embodiment of the semiconductor wafer cleaning apparatus of the present invention.
ユ衷施五辺盪風り
まず、第1図を参照しつつ、本発明にかかる半導体ウェ
ーハ洗浄装置の一実施例について、その構成を詳細に説
明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS First, the configuration of an embodiment of a semiconductor wafer cleaning apparatus according to the present invention will be described in detail with reference to FIG.
10は、本発明にかかる半導体ウェーハ洗浄装置であっ
て、半導体ウェーハ保持体1】Aに対して保持されてい
る半導体ウェー八Mを1枚ずつ取り出し搬送ガイドJI
Bの一端部に対して与えるためのローダ!1と、搬送ガ
イド1180他端部に入口部が配設されており洗浄水供
給管12Aから洗浄水(たとえば純水もしくは炭酸水)
を供給しつつローダ11から与えられた半導体ウェー八
Mを回転保持体12Bで保持して回転せしめることによ
り1枚ずつ洗浄し乾燥するための洗浄室12と、洗浄室
12の出口部に対し搬送ガイド+3Aを介して配設され
ており洗浄済の半導体ウェーハM0を1枚ずつ半導体ウ
ェーハ保持体13Bに保持せしめるためのアンローダ1
3と、搬送ガイド13Aの近傍に配置されており洗浄済
の半導体ウェー八M0に発生された静電気を中和するた
めの電極14とを備えてなる。Reference numeral 10 denotes a semiconductor wafer cleaning apparatus according to the present invention, in which the semiconductor wafers 8M held against the semiconductor wafer holder 1A are taken out one by one by a transport guide JI.
Loader for feeding against one end of B! 1, and an inlet is provided at the other end of the conveyance guide 1180, and cleaning water (for example, pure water or carbonated water) is supplied from the cleaning water supply pipe 12A.
The semiconductor wafers M given from the loader 11 are held and rotated by the rotary holder 12B while supplying the semiconductor wafers to the cleaning chamber 12 for cleaning and drying them one by one, and to the outlet of the cleaning chamber 12. An unloader 1 disposed via a guide +3A for holding cleaned semiconductor wafers M0 one by one on a semiconductor wafer holder 13B.
3, and an electrode 14 disposed near the transport guide 13A for neutralizing static electricity generated on the cleaned semiconductor wafer 8M0.
回転保持体12Bは、半導体ウェー八Mを真空吸着して
保持している。The rotating holder 12B holds the semiconductor wafer 8M by vacuum suction.
電極14は、洗浄済の半導体ウェーハM0が金属ダスト
によって汚染されることを回避するために、金属汚染の
少ない金属(たとえばタングステン)もしくは導電性珪
素によって形成されている。また、電極14は、適宜の
電源14^に接続されている。The electrode 14 is formed of a metal with little metal contamination (for example, tungsten) or conductive silicon in order to avoid contamination of the cleaned semiconductor wafer M0 with metal dust. Further, the electrode 14 is connected to a suitable power source 14^.
ユ!族且Ω庄里り
更に、第1図を参照しつつ1本発明にかかる半導体ウェ
ーハ洗浄装置の一実施例について、その作用を詳細に説
明する。Yu! Furthermore, with reference to FIG. 1, the operation of an embodiment of the semiconductor wafer cleaning apparatus according to the present invention will be described in detail.
本発明にかかる半導体ウェーハ洗浄装置厘では、半導体
ウェーハ保持体11Aを矢印A方向に移動せしめつつ、
ローダ11によって半導体ウェー八Mが半導体ウェーハ
保持体11Aから1枚ずつ搬送ガイドIIBに与えられ
る。In the semiconductor wafer cleaning apparatus according to the present invention, while moving the semiconductor wafer holder 11A in the direction of arrow A,
The loader 11 feeds the semiconductor wafers 8M one by one from the semiconductor wafer holder 11A to the transport guide IIB.
搬送ガイドIIBは、半導体ウェー八Mを洗浄室12に
向けて周知の要領で移送する。The transport guide IIB transports the semiconductor wafer M toward the cleaning chamber 12 in a well-known manner.
洗浄室12では、半導体ウェーハMを回転保持体12B
で吸着保持し矢印X方向に向けて回転しつつ、洗浄水供
給管12Aから洗浄水(たとλば純水もしくは炭酸水)
を供給することにより洗浄し乾燥する。In the cleaning chamber 12, the semiconductor wafer M is held on a rotating holder 12B.
While rotating in the direction of the arrow X, wash water (for example, pure water or carbonated water) is supplied from the wash water supply pipe 12A.
Wash and dry by supplying.
洗浄室12において洗浄された半導体ウェーハM(以下
M”と記す)は、搬送ガイド13Aに与えられる。この
とき、洗浄室12の出口部外側に電極14が配置されて
いるので、洗浄済の半導体ウェーハM°は、静電気を除
去される。The semiconductor wafer M (hereinafter referred to as "M") cleaned in the cleaning chamber 12 is given to the transport guide 13A. At this time, since the electrode 14 is disposed outside the outlet of the cleaning chamber 12, the cleaned semiconductor wafer The wafer M° is destaticized.
洗浄済の半導体ウェーハM°は、そののち、搬送ガイド
+3Aによってアンローダ13に与えられる。The cleaned semiconductor wafer M° is then delivered to the unloader 13 by the transport guide +3A.
アンローダ13では、半導体ウェーハ保持体13Bを矢
印B方向に移動せしめつつ、洗浄済の半導体ウェーハM
0が半導体ウェーハ保持体13Bに対し1枚ずつ保持せ
しめられる。In the unloader 13, while moving the semiconductor wafer holder 13B in the direction of arrow B, the cleaned semiconductor wafer M is
0 is held one by one in the semiconductor wafer holder 13B.
ユ且体刑上
加えて、本発明にかかる半導体ウェーハ洗浄装置につい
て、−層理解を深めるために、具体的な数値などを挙げ
て説明する。In addition to the physical description, the semiconductor wafer cleaning apparatus according to the present invention will be explained using specific numerical values in order to deepen the understanding.
!狙困
電極(ここでは導電性珪素)に対し電源から50Hzで
20KVの電圧を与えた状態で、ローダより洗浄室に対
し直径が5インチの半導体ウェーハ(ここではシリコン
ウェーハ)を1枚ずつ供給し、洗浄供給管から純水を供
給しつつ洗浄し乾燥せしめたのち、搬送ガイドを介して
アンローダに向けて送出した。半導体ウェーハは、全部
で25枚洗浄された。! Semiconductor wafers (silicon wafers in this case) each having a diameter of 5 inches were supplied from the loader to the cleaning chamber one by one while applying a voltage of 20 KV at 50 Hz to the target electrode (conductive silicon in this case) from the power supply. After washing and drying while supplying pure water from the washing supply pipe, the material was sent to an unloader via a transport guide. A total of 25 semiconductor wafers were cleaned.
この結果、アンローダに与えられた洗浄済の半導体ウェ
ーハは、静電気の帯電圧が全て100■以下となってお
り、0.3umu上の径をもつダスj・が平均6.2個
除去されていた。ちなみに、洗浄済の半導体ウェーハに
は、金属ダストの付着が見られなかった。As a result, all of the cleaned semiconductor wafers given to the unloader had an electrostatic charge voltage of 100 μ or less, and an average of 6.2 pieces of dust j. with a diameter of 0.3 μm or more were removed. . Incidentally, no metal dust was observed on the cleaned semiconductor wafer.
土較掴
電極に対し電源から電圧を印加することなく、実施例と
同一の洗浄作業を反復した。The same cleaning operation as in the example was repeated without applying voltage from the power source to the soil gripping electrode.
この結果、アンローダに与えられた洗浄済の半導体ウェ
ーハは、静電気の帯電圧が全て3.0〜4.0KVとな
っており、0.3um以上の径をもつダストが平均5.
3g除去されていた。ちなみに、洗浄済の半導体ウェー
ハには、金属ダストの付着が見られなかった。As a result, all of the cleaned semiconductor wafers given to the unloader had an electrostatic charging voltage of 3.0 to 4.0 KV, and dust particles with a diameter of 0.3 um or more were on average 5.0 KV.
3g was removed. Incidentally, no metal dust was observed on the cleaned semiconductor wafer.
釘 と −との 1
実施例は、比較例に比べ、03μm以上の径をもつダス
トを半導体ウェーハ1枚あたり平均(1,9個除去でき
た。Compared to the comparative example, the nails and - examples were able to remove an average of 1.9 dust particles with a diameter of 0.3 μm or more per semiconductor wafer.
(3)発明の効果
上述より明らかなように、本発明にかかる半導体ウェー
ハ洗浄装置は、上述の[問題点の解決手段jに明示した
構成を有しているので、(il洗浄済の半導体ウェーハ
から静電気を除去できる効果
を有し、ひいては
(iil洗浄済の半導体ウェーハに対しダストが付着す
ることを防止できる効果
を有し、結果的に
(iiil il浄効果を維持できる効果を有するヵ(3) Effects of the invention As is clear from the above, the semiconductor wafer cleaning apparatus according to the present invention has the configuration specified in the above-mentioned [means for solving problems j]. It has the effect of removing static electricity from the semiconductor wafer, which in turn has the effect of preventing dust from adhering to (iii) cleaned semiconductor wafers, and as a result, it has the effect of maintaining the (iii) il cleaning effect.
第1図は、本発明にかかる半導体ウェーハ洗浄装置の一
実施例を示すための構成図である。
10・・・・・・・・・・・ ・半導体ウェーハ洗浄装
置11・・ ・・・・・・ ・ ・ ・ローダ11A・
・・・ ・・・・・・半導体ウェーハ保持体11B・・
・・・・・・・・・搬送ガイド12・・・・・・・・・
・・・・・・・洗浄室12^・・・・・・・・・・・洗
浄水供給管12B・・・・・・・・・・・・回転保持体
13・・・・・・・・・・・・・・・・アンローダ13
A・・・・・・・・・・・搬送ガイド13B・・・・・
・・・・・・・半導体ウェーハ保持体14・・・・・・
・・・・・・・・・・電極14A・・・・・・・・・・
電源FIG. 1 is a configuration diagram showing an embodiment of a semiconductor wafer cleaning apparatus according to the present invention. 10... ・Semiconductor wafer cleaning equipment 11... ・・Loader 11A・
... ...Semiconductor wafer holder 11B...
......Transport guide 12...
......Cleaning chamber 12^...Cleaning water supply pipe 12B...Rotary holder 13... ...... Unloader 13
A......Transport guide 13B...
... Semiconductor wafer holder 14 ...
・・・・・・・・・・Electrode 14A・・・・・・・・・・
power supply
Claims (1)
めつつ洗浄水によって洗浄し乾燥したのちアンローダに
向けて送出してなる半導体ウェーハ洗浄装置において、
洗浄室の出口部に対して電極を配設することにより洗浄
済の半導体ウェーハに発生された静電気を中和してなる
ことを特徴とする半導体ウェーハ洗浄装置。In a semiconductor wafer cleaning device, a semiconductor wafer received from a loader is rotated in a cleaning chamber, washed with cleaning water, dried, and then sent to an unloader.
1. A semiconductor wafer cleaning device characterized by neutralizing static electricity generated in a cleaned semiconductor wafer by disposing an electrode at an outlet of a cleaning chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33698789A JP2915458B2 (en) | 1989-12-26 | 1989-12-26 | Semiconductor wafer cleaning equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33698789A JP2915458B2 (en) | 1989-12-26 | 1989-12-26 | Semiconductor wafer cleaning equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03196626A true JPH03196626A (en) | 1991-08-28 |
| JP2915458B2 JP2915458B2 (en) | 1999-07-05 |
Family
ID=18304433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33698789A Expired - Fee Related JP2915458B2 (en) | 1989-12-26 | 1989-12-26 | Semiconductor wafer cleaning equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2915458B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5603777A (en) * | 1994-06-27 | 1997-02-18 | Dainippon Screen Mfg. Co., Ltd. | Substrate surface treating apparatus and substrate surface treating method |
| US6009890A (en) * | 1997-01-21 | 2000-01-04 | Tokyo Electron Limited | Substrate transporting and processing system |
| US6543461B2 (en) * | 1999-02-11 | 2003-04-08 | Nova Measuring Instruments Ltd. | Buffer system for a wafer handling system field of the invention |
| CN112987314A (en) * | 2021-03-15 | 2021-06-18 | 维沃移动通信有限公司 | Control method and device of intelligent glasses, intelligent glasses and electronic equipment |
-
1989
- 1989-12-26 JP JP33698789A patent/JP2915458B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5603777A (en) * | 1994-06-27 | 1997-02-18 | Dainippon Screen Mfg. Co., Ltd. | Substrate surface treating apparatus and substrate surface treating method |
| US6009890A (en) * | 1997-01-21 | 2000-01-04 | Tokyo Electron Limited | Substrate transporting and processing system |
| US6543461B2 (en) * | 1999-02-11 | 2003-04-08 | Nova Measuring Instruments Ltd. | Buffer system for a wafer handling system field of the invention |
| CN112987314A (en) * | 2021-03-15 | 2021-06-18 | 维沃移动通信有限公司 | Control method and device of intelligent glasses, intelligent glasses and electronic equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2915458B2 (en) | 1999-07-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6550091B1 (en) | Double-sided wafer edge scrubbing apparatus and method for using the same | |
| JPH0645302A (en) | Processing apparatus | |
| CN1266740C (en) | Micro-powder remover | |
| WO1992015115A1 (en) | Semiconductor manufacturing equipment | |
| JPH10189511A (en) | Wafer cleaning equipment | |
| JPH03196626A (en) | Semiconductor wafer cleaning equipment | |
| US10549324B2 (en) | Method and apparatus for backside cleaning of substrates | |
| US6127289A (en) | Method for treating semiconductor wafers with corona charge and devices using corona charging | |
| JP2003188138A (en) | Liquid processing method and liquid processing apparatus | |
| JPH1167705A (en) | Processing equipment | |
| JPH0555184A (en) | Cleaning method | |
| JP3406701B2 (en) | Electrostatic chuck for dust collection | |
| JPH11121435A (en) | Substrate processing apparatus and substrate processing method | |
| JP2913363B2 (en) | Rotary processing equipment | |
| JPH07302827A (en) | Semiconductor wafer transfer device | |
| JPH06173041A (en) | Method for cleaning etching device | |
| JP2003031553A (en) | Plasma etching apparatus | |
| JPH04283075A (en) | Sand blast device | |
| WO2009128431A1 (en) | Atmosphere cleaning device | |
| JPH0955418A (en) | Wafer transfer device | |
| US5506744A (en) | Ionized airflow manifold for static reduction | |
| CN115705988B (en) | Jig wafer, cleaning jig, and cleaning method | |
| JPH0766266A (en) | Dust collector in substrate transfer device | |
| US6302459B1 (en) | Conveyance arm device | |
| JPS58215032A (en) | Removal of foreign matters |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |