JPH03200327A - Washer for semiconductor wafer - Google Patents

Washer for semiconductor wafer

Info

Publication number
JPH03200327A
JPH03200327A JP34104989A JP34104989A JPH03200327A JP H03200327 A JPH03200327 A JP H03200327A JP 34104989 A JP34104989 A JP 34104989A JP 34104989 A JP34104989 A JP 34104989A JP H03200327 A JPH03200327 A JP H03200327A
Authority
JP
Japan
Prior art keywords
cleaning
tank
cleaning liquid
pure water
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP34104989A
Other languages
Japanese (ja)
Inventor
Mitsuru Oishi
満 大石
Masashi Omori
大森 雅司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SPC Electronics Corp
Mitsubishi Electric Corp
Original Assignee
SPC Electronics Corp
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SPC Electronics Corp, Mitsubishi Electric Corp filed Critical SPC Electronics Corp
Priority to JP34104989A priority Critical patent/JPH03200327A/en
Publication of JPH03200327A publication Critical patent/JPH03200327A/en
Pending legal-status Critical Current

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  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体ウェハ表面を洗浄する装置に関し、特に
その洗浄装置の構造に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an apparatus for cleaning the surface of a semiconductor wafer, and particularly to the structure of the cleaning apparatus.

〔従来の技術〕[Conventional technology]

従来のこの種の洗浄を実施する洗浄槽を第3図を用いて
説明する。
A conventional cleaning tank for carrying out this type of cleaning will be explained with reference to FIG.

第3図は従来の洗浄槽を示す図であり、図中、1は半導
体ウェハ、2は洗浄槽、3は洗浄液である。洗浄槽2の
形状は通常矩形であり、この槽で洗浄液にウェハを浸す
。また、洗浄効果を高めるためには超音波エネルギーを
加え、洗浄するだけで十分であった。
FIG. 3 is a diagram showing a conventional cleaning tank, in which 1 is a semiconductor wafer, 2 is a cleaning tank, and 3 is a cleaning liquid. The shape of the cleaning tank 2 is usually rectangular, and the wafer is immersed in the cleaning liquid in this tank. In addition, in order to enhance the cleaning effect, it was sufficient to apply ultrasonic energy and perform cleaning.

しかし、集積回路が微細化するに従い、第4図に示すダ
イナミックRAMのようにウェハ表面の凹凸が大きくな
り(例えばトレンチ溝に代表されるように)、この凹凸
のすみずみまで洗浄を行うものとすると、第3図に示し
たような洗浄槽に常圧状態で単にウェハを浸すだけでは
穴の細部まで洗浄液を入れることは不可能である。
However, as integrated circuits become finer, as in the dynamic RAM shown in Figure 4, the irregularities on the wafer surface become larger (as typified by trenches, for example), and it becomes necessary to clean every corner of these irregularities. Therefore, it is impossible to fill the holes with cleaning solution by simply immersing the wafer in a cleaning tank as shown in FIG. 3 under normal pressure.

そこで、第4図のようなトレンチ溝の洗浄では減圧下で
ウェハを洗浄液に浸し、常圧又はさらに加圧することよ
りトレンチ溝の細部まで洗浄液を入れ、洗浄を完全に行
うことが考えられる。
Therefore, in cleaning the trench grooves as shown in FIG. 4, it is conceivable to immerse the wafer in a cleaning liquid under reduced pressure, and then apply normal pressure or even higher pressure to fill the cleaning liquid into the finer details of the trench grooves for complete cleaning.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかしながら、従来、このような減圧状態でウェハを浸
す装置は実現されていなかった。
However, a device for immersing a wafer in such a reduced pressure state has not been realized so far.

この発明は、上記のような従来のものの問題点を解決す
るためになされたもので、減圧状態でウェハに洗浄液を
供給する装置を実現できるとともに、減圧時のミストの
発生を抑えることができる、半導体ウェハの洗浄装置を
得ることを目的としている。
This invention was made in order to solve the problems of the conventional ones as described above, and it is possible to realize a device that supplies cleaning liquid to a wafer under reduced pressure, and also to suppress the generation of mist when the pressure is reduced. The purpose is to obtain a cleaning device for semiconductor wafers.

〔課題を解決するための手段〕[Means to solve the problem]

この発明にかかる半導体ウェハの洗浄装置は、洗浄槽の
減圧状態を実現するために洗浄槽と洗浄液の貯液槽との
2層構造にし、洗浄液供給系及び排液系をN2または純
水で常にリンスして系を清浄に保ち、洗浄槽に対して排
液系と真空排気系を共通にして真空排気系を清浄に保つ
ようにしたものである。
The semiconductor wafer cleaning apparatus according to the present invention has a two-layer structure consisting of a cleaning tank and a cleaning liquid storage tank in order to realize a reduced pressure state in the cleaning tank, and the cleaning liquid supply system and drainage system are constantly filled with N2 or pure water. The system is kept clean by rinsing, and the drainage system and vacuum exhaust system are shared for the cleaning tank to keep the vacuum exhaust system clean.

〔作用〕[Effect]

この発明においては、洗浄液供給系、排液系及び真空排
気系を洗浄槽に対して清浄な状態に保つことができ、洗
浄槽内のウェハに対する汚れ、特に真空−常圧の変化に
対する気流の乱れ、を防ぐことができ、ミストの発生を
防止することができる。また、洗浄槽と貯液槽とにわけ
ることにより、洗浄液を繰り返し使うことができ、洗浄
液の使用量を削減できる。
In this invention, the cleaning liquid supply system, drainage system, and vacuum exhaust system can be kept clean with respect to the cleaning tank, and dirt on the wafer in the cleaning tank can be prevented, especially airflow turbulence caused by changes in vacuum and normal pressure. , and the generation of mist can be prevented. Moreover, by separating the cleaning tank and the liquid storage tank, the cleaning liquid can be used repeatedly, and the amount of cleaning liquid used can be reduced.

〔実施例〕〔Example〕

以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.

第1図は本発明の一実施例による半導体ウェハの洗浄装
置を示し、本実施例においては、洗浄槽Aの構成は第1
図に示すように、外槽11とN13とで密閉構造にでき
るようになっており、外槽11の内に内槽12を持つ2
重槽になっている。
FIG. 1 shows a semiconductor wafer cleaning apparatus according to an embodiment of the present invention. In this embodiment, the configuration of the cleaning tank A is
As shown in the figure, the outer tank 11 and N13 can form a sealed structure, and the outer tank 11 has an inner tank 12 inside.
It is in a heavy tank.

また、この内槽12の内下部には洗浄液又は純水を供給
する供給口14が設けられている。内槽12をあふれた
洗浄液は外槽11を経て、ドレイン34より槽より排出
される。洗浄されるウェハ1は内槽12に入れられ、洗
浄されることになる。
Further, a supply port 14 for supplying cleaning liquid or pure water is provided in the inner lower part of the inner tank 12. The cleaning liquid overflowing the inner tank 12 passes through the outer tank 11 and is discharged from the tank through the drain 34. The wafer 1 to be cleaned is placed in the inner bath 12 and will be cleaned.

次に、洗浄装置の動作及び機能の説明を第2図の洗浄シ
ーケンスを例にとり行う。
Next, the operation and function of the cleaning device will be explained using the cleaning sequence shown in FIG. 2 as an example.

■ 内槽12にウェハ1を収納した後、蓋13で外槽1
1を閉じ、洗浄槽Aを密閉にする(ステップSL)。
■ After storing the wafer 1 in the inner tank 12, open the outer tank 1 with the lid 13.
1, and the cleaning tank A is made airtight (step SL).

■ 3方弁24.25.26により外槽11内槽12を
真空ポンプ38と接続し、外槽11と内槽12をともに
減圧(数100ton〜数t0n以下)にする(ステッ
プS2)。
(2) Connect the outer tank 11 and the inner tank 12 to the vacuum pump 38 using the three-way valves 24, 25, and 26, and reduce the pressure in both the outer tank 11 and the inner tank 12 (several 100 tons to several tons or less) (step S2).

■ 3方弁24.25を閉じ、3方弁23を使い、洗浄
液の貯液槽Bと洗浄槽Aとを接続し、槽Bより洗浄液を
内槽12に供給する(ステップS3)。
(2) Close the three-way valves 24 and 25, connect the cleaning liquid storage tank B and the cleaning tank A using the three-way valve 23, and supply the cleaning liquid from tank B to the inner tank 12 (step S3).

■ 洗浄液が内槽12をオーバフロー又はウェハ1を完
全に浸った状態で、−旦弁23を閉じ、弁21を開き、
内槽12.外槽11をNzなどの不活性ガスで満たし、
常圧にする。この時、ウェハ1表面上の凹凸部(トレン
チ溝も含めて)を完全に洗浄液で覆うことになる。
- With the cleaning liquid overflowing the inner tank 12 or completely immersing the wafer 1, close the valve 23 and open the valve 21.
Inner tank 12. Fill the outer tank 11 with an inert gas such as Nz,
Bring to normal pressure. At this time, the uneven portions (including the trench grooves) on the surface of the wafer 1 are completely covered with the cleaning liquid.

この後、3方弁25により外槽11と貯液槽Bとを接続
し、内槽12より外槽11へあふれた洗浄液を貯液槽B
に戻す。さらに弁23により貯液槽Bと洗浄槽Aの内槽
12とを接続させ、圧送ポンプ40を使い、貯液槽Bよ
りフィルタリングされた洗浄液を常に内槽12に供給し
、外槽11より貯液槽Bへのリターンを繰り返し、常に
清浄な洗浄液によりウェハ1表面の洗浄を行う(ステッ
プS4)。
After that, the outer tank 11 and the liquid storage tank B are connected by the three-way valve 25, and the cleaning liquid overflowing from the inner tank 12 to the outer tank 11 is transferred to the liquid storage tank B.
Return to Further, the valve 23 connects the liquid storage tank B and the inner tank 12 of the cleaning tank A, and the pressure pump 40 is used to constantly supply filtered cleaning liquid from the liquid storage tank B to the inner tank 12, and from the outer tank 11 to the inner tank 12. The return to the liquid tank B is repeated, and the surface of the wafer 1 is constantly cleaned with a clean cleaning liquid (step S4).

■ 3方弁23を閉じ、貯液槽Bから内槽12への液供
給を止め、3方弁24を開き、さらに弁21を開き、N
!を洗浄!!Aに供給し、内槽12゜外槽11の洗浄液
を貯液槽Bに戻す。このとき弁22、弁23とにより内
槽12に配管32よりNtを供給することにより、洗浄
液を配管32より完全に追い出すことが必要である(ス
テップS5)。
■ Close the 3-way valve 23, stop the liquid supply from the liquid storage tank B to the inner tank 12, open the 3-way valve 24, open the valve 21, and turn the N
! Wash! ! The cleaning liquid in the inner tank 12 and the outer tank 11 is returned to the liquid storage tank B. At this time, it is necessary to completely expel the cleaning liquid from the pipe 32 by supplying Nt from the pipe 32 to the inner tank 12 using the valves 22 and 23 (step S5).

■ 弁21によりN2を止め、弁25により内槽12と
貯液槽Bとを止め、弁22.23によって純水を内槽1
2に供給する。さらに弁24.26により外槽11を排
液12と接続する。純水は内槽12→外槽11→排液口
の順で流れ、内槽12のウェハ1は純水でリンスされる
(ステップS6)。
■ Stop N2 with valve 21, stop inner tank 12 and liquid storage tank B with valve 25, and supply pure water to inner tank 1 with valves 22 and 23.
Supply to 2. Furthermore, the outer tank 11 is connected to the drain 12 by means of valves 24,26. The pure water flows in the order of the inner tank 12 → outer tank 11 → drain port, and the wafers 1 in the inner tank 12 are rinsed with the pure water (step S6).

■ 弁21によりN2を外槽11に供給し、弁22によ
り内槽12に対して純水の供給を止め、N2を供給する
。弁25と27とにより内槽12を排液12へ接続し、
内槽12.外槽11の純水を排液口へ流し出す(ステッ
プ37)。
(2) The valve 21 supplies N2 to the outer tank 11, the valve 22 stops the supply of pure water to the inner tank 12, and supplies N2. connecting the inner tank 12 to the drain 12 by means of valves 25 and 27;
Inner tank 12. The pure water in the outer tank 11 is drained to the drain port (step 37).

■ 弁21.23により洗浄槽Aに対するN。■ N to cleaning tank A by valves 21 and 23.

供給を止め、弁26.27により内槽12.外槽11を
真空ポンプ38に接続する。洗浄槽Aを減圧状態にし、
槽A及びウェハ1表面に残留する純水を蒸発させ、ウェ
ハ1の乾燥を行う(ステップS8)。
The supply is stopped and the inner tank 12. Connect outer tank 11 to vacuum pump 38. Cleaning tank A is brought to a reduced pressure state,
The pure water remaining in tank A and the surface of wafer 1 is evaporated to dry wafer 1 (step S8).

■ 弁24.25を閉じ、弁21を開き、N2を洗浄槽
Aに供給し、槽内を常圧に戻し、蓋13を開き、洗浄乾
燥されたウェハを取り出す(ステップ39)。
(2) Close the valves 24 and 25, open the valve 21, supply N2 to the cleaning tank A, return the inside of the tank to normal pressure, open the lid 13, and take out the cleaned and dried wafer (step 39).

■ 以降の乾燥工程は別の乾燥装置で行うことも可能で
ある。
■ The subsequent drying process can also be performed using a separate drying device.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明に係る洗浄装置によれば、
洗浄槽と洗浄液の貯液槽との2重構造にしたので、ウェ
ハ表面に対し減圧状態で洗浄液を供給でき、洗浄液をウ
ェハ表面全体(トレンチ溝を含めて)を覆うようにでき
、完全な洗浄が可能となる。
As explained above, according to the cleaning device according to the present invention,
The dual structure of a cleaning tank and a cleaning liquid storage tank allows the cleaning liquid to be supplied to the wafer surface under reduced pressure, allowing the cleaning liquid to cover the entire wafer surface (including the trenches), ensuring complete cleaning. becomes possible.

また、洗浄液供給系及び排液系をN2または純水で常に
リンスして系を清浄に保ち、洗浄槽に対して排液系と真
空排気系を共通にして真空排気系を清浄に保つようにし
たので、洗浄液供給管、排管は常に純水で洗浄するシー
ケンスに組み込むことができ、清浄な状態を維持できる
Also, keep the system clean by constantly rinsing the cleaning liquid supply system and drainage system with N2 or pure water, and keep the vacuum exhaust system clean by using the same drain system and vacuum exhaust system for the cleaning tank. Therefore, the cleaning liquid supply pipe and the drain pipe can be incorporated into the sequence of always washing with pure water, and the clean state can be maintained.

さらに洗浄槽に対し、排液管と真空管を共通にできるた
め、余分な液だめを生じず、洗浄液ミストも発生しない
Furthermore, since the drain pipe and vacuum tube can be shared for the cleaning tank, there is no excess liquid reservoir and no cleaning liquid mist is generated.

さらに、真空管を純水で洗浄できるため、減圧←常圧時
の圧力変動による洗浄液ミストの発生を防ぐことができ
る。
Furthermore, since the vacuum tube can be cleaned with pure water, it is possible to prevent the generation of cleaning liquid mist due to pressure fluctuations between reduced pressure and normal pressure.

また、真空ポンプに対して洗浄液の混入を防ぐことがで
きるため、真空ポンプの劣化をなくすことができる。
Furthermore, since cleaning liquid can be prevented from entering the vacuum pump, deterioration of the vacuum pump can be prevented.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例による半導体ウェハの洗浄装
置の構成図、第2図は本発明による洗浄シーケンスの一
例を示す図、第3図は従来の洗浄装置を示す図、第4図
はトレンチ溝を含んだ横型キャパシターセルの断面構造
図である。 図において、11は外槽、12内槽、13は蓋、14は
供給口、34はドレインである。 なお図中同一符号は同−又は相当部分を示す。
FIG. 1 is a block diagram of a semiconductor wafer cleaning apparatus according to an embodiment of the present invention, FIG. 2 is a diagram showing an example of a cleaning sequence according to the present invention, FIG. 3 is a diagram showing a conventional cleaning apparatus, and FIG. 4 is a diagram showing an example of a cleaning sequence according to the present invention. 1 is a cross-sectional structural diagram of a horizontal capacitor cell including a trench. In the figure, 11 is an outer tank, 12 is an inner tank, 13 is a lid, 14 is a supply port, and 34 is a drain. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (5)

【特許請求の範囲】[Claims] (1)洗浄槽と、洗浄液の貯液槽とからなる洗浄装置に
おいて、 上記洗浄槽は減圧手段、不活性ガス供給手段、洗浄液供
給手段、純水供給手段を備え、 貯液槽より洗浄槽へ洗浄液を供給し、処理済の洗浄液を
洗浄槽から貯液槽へ戻す構成としたことを特徴とする洗
浄装置。
(1) In a cleaning device consisting of a cleaning tank and a cleaning liquid storage tank, the cleaning tank is equipped with a pressure reduction means, an inert gas supply means, a cleaning liquid supply means, and a pure water supply means, and the cleaning tank is supplied from the liquid storage tank to the cleaning tank. A cleaning device characterized by having a configuration in which a cleaning liquid is supplied and the treated cleaning liquid is returned from a cleaning tank to a liquid storage tank.
(2)請求項1記載の洗浄装置において、 上記洗浄槽は、減圧中に洗浄液又は純水を供給する手段
を持ち、かつ不活性ガスで常圧または加圧を可能とした
構成を持つことを特徴とする洗浄装置。
(2) The cleaning device according to claim 1, wherein the cleaning tank has a means for supplying cleaning liquid or pure water during depressurization, and is configured to be able to be pressurized with an inert gas at normal pressure or pressurization. Characteristic cleaning equipment.
(3)請求項1記載の洗浄装置において、 上記洗浄槽は、洗浄液供給管に純水またはN_2などの
不活性ガスを供給する手段を持ち、洗浄液供給管を常に
純水、N_2でパージ可能とした構成を持つことを特徴
とする洗浄装置。
(3) In the cleaning device according to claim 1, the cleaning tank has means for supplying pure water or an inert gas such as N_2 to the cleaning liquid supply pipe, and the cleaning liquid supply pipe can be constantly purged with pure water or N_2. A cleaning device characterized by having a configuration.
(4)請求項1記載の洗浄装置において、 洗浄液排出管及び真空排気管において純水排出手段を持
ち、洗浄液排出管及び真空排気管を常に純水でパージ可
能とした構成を持つことを特徴とする洗浄装置。
(4) The cleaning device according to claim 1, characterized by having a pure water discharge means in the cleaning liquid discharge pipe and the vacuum exhaust pipe, so that the cleaning liquid discharge pipe and the vacuum exhaust pipe can be constantly purged with pure water. cleaning equipment.
(5)請求項4記載の洗浄装置において、 洗浄槽よりの洗浄液排水管と真空排気管とを共用した構
成を持つことを特徴とする洗浄装置。
(5) The cleaning device according to claim 4, wherein the cleaning device has a configuration in which a cleaning liquid drain pipe from the cleaning tank and a vacuum exhaust pipe are shared.
JP34104989A 1989-12-27 1989-12-27 Washer for semiconductor wafer Pending JPH03200327A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34104989A JPH03200327A (en) 1989-12-27 1989-12-27 Washer for semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34104989A JPH03200327A (en) 1989-12-27 1989-12-27 Washer for semiconductor wafer

Publications (1)

Publication Number Publication Date
JPH03200327A true JPH03200327A (en) 1991-09-02

Family

ID=18342762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34104989A Pending JPH03200327A (en) 1989-12-27 1989-12-27 Washer for semiconductor wafer

Country Status (1)

Country Link
JP (1) JPH03200327A (en)

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