JPH0320054A - Method of bonding liquid crystal device - Google Patents

Method of bonding liquid crystal device

Info

Publication number
JPH0320054A
JPH0320054A JP1155303A JP15530389A JPH0320054A JP H0320054 A JPH0320054 A JP H0320054A JP 1155303 A JP1155303 A JP 1155303A JP 15530389 A JP15530389 A JP 15530389A JP H0320054 A JPH0320054 A JP H0320054A
Authority
JP
Japan
Prior art keywords
liquid crystal
aluminum wire
aluminum
wiring film
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1155303A
Other languages
Japanese (ja)
Other versions
JP2715556B2 (en
Inventor
Yoshifumi Kitayama
北山　喜文
Yukio Maeda
幸男 前田
Tokuhito Hamane
浜根　徳人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1155303A priority Critical patent/JP2715556B2/en
Publication of JPH0320054A publication Critical patent/JPH0320054A/en
Application granted granted Critical
Publication of JP2715556B2 publication Critical patent/JP2715556B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07141—Means for applying energy, e.g. ovens or lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07521—Aligning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/953—Materials of bond pads not comprising solid metals or solid metalloids, e.g. polymers, ceramics or liquids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Liquid Crystal (AREA)
  • Wire Bonding (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

PURPOSE:To simplify the process and to improve the yield rate of a liquid crystal device by vibrating an aluminum wire with ultrasonics while pressing it with a tool so as to bond the aluminum wire with an ITO wiring film. CONSTITUTION:In the method of connecting a wire with the wiring film 2 of an indium tin oxide(ITO) formed on a glass board 1, an aluminum wire 6 is vibrated with ultrasonics while pressing it with a tool 8 so as to bond the aluminum wire with the wiring film 2. Accordingly, there is no necessity of forming a special aluminum film to take electrical contact with the ITO wiring film 2. Hereby, the process is simplified, and also defect following it vanishes.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は液晶デバイスにおいて、配線のレスキューや、
ベアーの液晶ドライバーＩＣをワイヤーで接続するため
の接合方法に関する。[Detailed Description of the Invention] Industrial Application Field The present invention is applicable to wiring rescue and
This invention relates to a joining method for connecting bare liquid crystal driver ICs with wires.

従来の技術 従来、液晶デバイスに液晶ドライバーＩＣを直接搭載し
てワイヤーポンディングする場合の例を第２図に示す。2. Description of the Related Art FIG. 2 shows an example of a conventional method in which a liquid crystal driver IC is directly mounted on a liquid crystal device and wire bonding is performed.

図において、１０１はガラス基板、１０２はＩＴＯ配線
膜、１０３はアルミニウｔ１膜、１０４は銀ペースト、
１０５は液晶ドライバーＩＣ、１０６は液晶ドライバー
ＩＣのアルミニウム電極、１０７は金ワイヤーである。In the figure, 101 is a glass substrate, 102 is an ITO wiring film, 103 is an aluminum T1 film, 104 is a silver paste,
105 is a liquid crystal driver IC, 106 is an aluminum electrode of the liquid crystal driver IC, and 107 is a gold wire.

第２図に示すように従来は、ガラス基板１０１上に形成
したインジウム・スズ・オキサイド（以下ＩＴＯと記す
）の配ＡＩＩＩＩＩｌ０２に部分的に真空蒸着、スパッ
タリングによってアルミニウム膜１０３を形成しておく
。次に銀ペースト１０４をガラス基板１０１上に塗布し
たのち、液晶ドライバーＩＣｌ０５をマウントして銀ペ
ースト１０４を硬化させる。しかるのち、液晶ドライバ
ー【Ｃ１０５のアルミニウム電極１０６とガラス基板１
０１上のアルミニウム１１１０３をボールボンディング
法によって金ワイヤー１０７によって接続する。As shown in FIG. 2, conventionally, an aluminum film 103 is partially formed on an indium tin oxide (hereinafter referred to as ITO) distribution AIII102 formed on a glass substrate 101 by vacuum evaporation and sputtering. Next, after applying silver paste 104 onto the glass substrate 101, a liquid crystal driver ICl05 is mounted and the silver paste 104 is hardened. After that, the aluminum electrode 106 and glass substrate 1 of the liquid crystal driver [C105]
Aluminum 11103 on 01 is connected by gold wire 107 by ball bonding method.

発明が解決しようとする課題 しかしながら、このような方法ではアルミニウム膜１０
３を形成しなければならないが、このアルミニウム膜１
０３を形成するには、たとえば真空蒸着→レジスト塗布
→ブリベーキング→ボストベーキング→エッチング→洗
浄といった複雑な工程を経なければならなかった。また
、この複雑な工程を経ることによって液晶デバイスの歩
留りが低下するという問題もあった。Problems to be Solved by the Invention However, in such a method, the aluminum film 10
3 must be formed, but this aluminum film 1
In order to form 03, it was necessary to go through a complicated process such as, for example, vacuum deposition → resist coating → pre-baking → boss baking → etching → cleaning. There is also the problem that the yield of liquid crystal devices decreases due to this complicated process.

課題を解決するための手段 本発明はかかる問題点に鑑み、アルミニウムワイヤーを
ツールで押圧させながら超音波で加振させて、アルミニ
ウムワイヤーとＩＴＯ配線膜とを接合させる方法をとっ
た。Means for Solving the Problems In view of these problems, the present invention adopts a method of joining the aluminum wire and the ITO wiring film by applying ultrasonic vibration to the aluminum wire while pressing it with a tool.

作　　　用 本発明によれば、アルミニウムワイヤーをツールで押圧
させながら超音波で加振させるため、大部分はアルミニ
ウムワイヤーとＩＴＯ配線膜が接合され、一部はＩＴＯ
ｆｉ＊を部分的に破壊して、アルミニウムワイヤーとＩ
ＴＯ膜の下地であるガラス基板が部分的に接合される。Function According to the present invention, since the aluminum wire is vibrated by ultrasonic waves while being pressed by a tool, most of the aluminum wire and the ITO wiring film are bonded, and a part of the aluminum wire is bonded with the ITO wiring film.
Partially destroy fi* and remove aluminum wire and I.
The glass substrate underlying the TO film is partially bonded.

したがって、アルミニウムワイヤーとＩ　Ｔ　Ｏ　Ｉｌ
ｌとは電気的に接続される。Therefore, aluminum wire and I T O Il
It is electrically connected to l.

実施例 第ｌ図は本発明の一実施例の構成を説明するための概略
図である。この図において、■はガラス基板、２はＩＴ
Ｏ配線膜、３は銀ペースト、４は液晶ドライバーＩＣ、
５は液晶ドライバーＩＣのアルミニウム電極、６はアル
ミニウムワイヤー７は超音波ホーン、８はワイヤー６を
ガイドする溝８ａを先に有するツールである。Embodiment FIG. 1 is a schematic diagram for explaining the configuration of an embodiment of the present invention. In this figure, ■ is the glass substrate, 2 is the IT
O wiring film, 3 is silver paste, 4 is liquid crystal driver IC,
5 is an aluminum electrode of a liquid crystal driver IC, 6 is an aluminum wire 7 is an ultrasonic horn, and 8 is a tool having a groove 8a at the tip for guiding the wire 6.

第１図に示すように、まずガラス基板１に銀ペーストを
塗布したのち液晶ドライバーＩＣ４をマウントして銀ペ
ースト３を硬化させる。しかるのち、液晶ドライバーＩ
Ｃ４のアルミニウム電極５とアルミニウムワイヤー６を
超音波ホーン７の先端に取付けたツール８によって押圧
させながら超音波を加振させながら接合させる。つぎに
、アルミニウムワイヤー６の他端をガラス基板１上に形
成したＩＴＯ配線膜２とを同様に超音波ホーン７の先端
に取付けたツール８によって押圧させながら超音波を加
振させて接合させる。As shown in FIG. 1, silver paste is first applied to a glass substrate 1, and then a liquid crystal driver IC 4 is mounted and the silver paste 3 is hardened. After that, LCD driver I
A C4 aluminum electrode 5 and an aluminum wire 6 are joined together while being pressed by a tool 8 attached to the tip of an ultrasonic horn 7 while exciting ultrasonic waves. Next, the other end of the aluminum wire 6 is joined to the ITO wiring film 2 formed on the glass substrate 1 by applying ultrasonic waves while pressing it with a tool 8 similarly attached to the tip of an ultrasonic horn 7.

なお、ここでは液晶ドライバーＩＣと液晶デノくイスと
の接合であったが、液晶デバイスのレスキューとしてＩ
ＴＯ配線膜間の接合にも使用できることはいうまでもな
い。Note that although the liquid crystal driver IC and liquid crystal denomination device were bonded here, I
Needless to say, it can also be used for bonding between TO wiring films.

発明の効果 本発明によれば、従来のようにＩＴＯ配線膜との電気的
接触をとるために特別にアルミニウム膜を形成する必要
はないため、工程が簡略化されるとともに、それに伴う
不良もなくなる。Effects of the Invention According to the present invention, there is no need to specially form an aluminum film to make electrical contact with the ITO wiring film as in the conventional method, which simplifies the process and eliminates defects associated with it. .

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の一実施例を示す断面図、第２図は従来
の液晶デバイスの接合状態を示す断面図で．ある。 １，１０１・・・・・・基板、２，１０２・・・・・・
ＩＴＯ配線膜、３，１０３・・・・・・銀ペースト、４
，１０４・・・・・・液晶ドライバーｔＣ、５．１０５
・・・・・・アルミニウム電極、６．１０６・・・・・
・アルミニウムワイヤー、７・・・・・・超音波ホーン
、８・・・・・・ツール、１０７・・・・・・金ワイヤ
ーFigure 1 is a cross-sectional view showing an embodiment of the present invention, and Figure 2 is a cross-sectional view showing the bonding state of a conventional liquid crystal device. be. 1,101...Substrate, 2,102...
ITO wiring film, 3,103...Silver paste, 4
,104...LCD driver tC, 5.105
...Aluminum electrode, 6.106...
・Aluminum wire, 7... Ultrasonic horn, 8... Tool, 107... Gold wire

Claims (3)

【特許請求の範囲】[Claims] （１）ガラス基板上に形成したインジウム・スズ・オキ
サイドの配線膜にワイヤーを接続する方法において、ア
ルミニウムワイヤーをツールで押圧させながら超音波で
加振させて、前記アルミニウムワイヤーと前記配線膜と
を接合させる液晶デバイスの接合方法。(1) In a method of connecting a wire to an indium tin oxide wiring film formed on a glass substrate, the aluminum wire and the wiring film are connected by pressing the aluminum wire with a tool and vibrating it with ultrasonic waves. A method for bonding liquid crystal devices. （２）アルミニウムワイヤーにおいて、不純物としてシ
リコンを１０％以下添加した請求項１記載の液晶デバイ
スの接合方法。(2) The method for bonding a liquid crystal device according to claim 1, wherein 10% or less of silicon is added as an impurity to the aluminum wire. （３）ツールにおいて、前記アルミニウムワイヤーと接
触する底面にアルミニウムワイヤーが沿うように溝が形
成されていることを特徴とする請求項１記載の液晶デバ
イスの接合方法。(3) The method for bonding liquid crystal devices according to claim 1, wherein the tool has a groove formed along the bottom surface of the tool that contacts the aluminum wire so that the aluminum wire runs along the bottom surface.
JP1155303A 1989-06-16 1989-06-16 Liquid crystal device joining method Expired - Fee Related JP2715556B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1155303A JP2715556B2 (en) 1989-06-16 1989-06-16 Liquid crystal device joining method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1155303A JP2715556B2 (en) 1989-06-16 1989-06-16 Liquid crystal device joining method

Publications (2)

Publication Number Publication Date
JPH0320054A true JPH0320054A (en) 1991-01-29
JP2715556B2 JP2715556B2 (en) 1998-02-18

Family

ID=15602953

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1155303A Expired - Fee Related JP2715556B2 (en) 1989-06-16 1989-06-16 Liquid crystal device joining method

Country Status (1)

Country Link
JP (1) JP2715556B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2010150351A1 (en) * 2009-06-23 2012-12-06 東芝三菱電機産業システム株式会社 Electrode substrate

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61216355A (en) * 1985-03-20 1986-09-26 Tanaka Denshi Kogyo Kk Al wire for bonding semiconductor element
JPS6271111A (en) * 1985-09-24 1987-04-01 三菱レイヨン株式会社 Transparent conductive substrate and its manufacturing method
JPS63276278A (en) * 1987-05-08 1988-11-14 Toa Nenryo Kogyo Kk Transparent electrode with buried interconnection
JPH01129429A (en) * 1987-11-16 1989-05-22 Mitsubishi Electric Corp Capillary for wire bonding device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61216355A (en) * 1985-03-20 1986-09-26 Tanaka Denshi Kogyo Kk Al wire for bonding semiconductor element
JPS6271111A (en) * 1985-09-24 1987-04-01 三菱レイヨン株式会社 Transparent conductive substrate and its manufacturing method
JPS63276278A (en) * 1987-05-08 1988-11-14 Toa Nenryo Kogyo Kk Transparent electrode with buried interconnection
JPH01129429A (en) * 1987-11-16 1989-05-22 Mitsubishi Electric Corp Capillary for wire bonding device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2010150351A1 (en) * 2009-06-23 2012-12-06 東芝三菱電機産業システム株式会社 Electrode substrate

Also Published As

Publication number Publication date
JP2715556B2 (en) 1998-02-18

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