JPH03201345A - Lamination type cathode device - Google Patents

Lamination type cathode device

Info

Publication number
JPH03201345A
JPH03201345A JP1341404A JP34140489A JPH03201345A JP H03201345 A JPH03201345 A JP H03201345A JP 1341404 A JP1341404 A JP 1341404A JP 34140489 A JP34140489 A JP 34140489A JP H03201345 A JPH03201345 A JP H03201345A
Authority
JP
Japan
Prior art keywords
metal powder
metal
powder sintered
sintered layer
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1341404A
Other languages
Japanese (ja)
Inventor
Kinjiro Sano
佐野 金治郎
Toyoichi Kamata
鎌田 豊一
Takashi Shinjo
孝 新庄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1341404A priority Critical patent/JPH03201345A/en
Publication of JPH03201345A publication Critical patent/JPH03201345A/en
Pending legal-status Critical Current

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  • Solid Thermionic Cathode (AREA)

Abstract

PURPOSE:To improve an electron radiation characteristic by forming an electron radiation substance layer on substrate metal via a metal powder sintered layer. CONSTITUTION:Metal powder sintered layer is wrappedly formed on substrate metal 10 wrappedly formed on one surface of a heat-resistant insulation substrate 1, an electron radiation substance layer 4 is formed on the metal powder sintered layer 11, and also a heater is formed on the other surface of the substrate 1. The application of voltage to a heating body 51 causes the heating body 51 to be heat-generated by Joule heat, the substrate metal 10 and the metal powder sintered layer 11 to be heated, and barium oxide, which is a component of the electron radiation substance layer 4, and silicon, a trace amount of which is contained in the metal powder sintered layer 11, to react. Ba produced by the reaction is made as a donor to conduct electron radiation. This improves an electron radiation characteristic.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、インライン型カラーブラウン管に用いられ
る電子放射特性を向上したM jl状陰極装置に関する
ものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an Mjl-shaped cathode device with improved electron emission characteristics used in an in-line color cathode ray tube.

(従来の技術〕 第8図〜第5図は従来のこの種陰極装置の拡大図で、図
において、1は0.1〜Q、4fjl程度の厚さのサフ
ァイア等から構成された耐熱性絶縁基板・2は耐熱性M
k基板lの一面にタングステンがスパッタリング等の方
法で被着形成され直線状に配置された基体金属、3は基
体金属2と同様の方法で一体的に耐熱性絶縁基板1の上
に被着形成され先端に陰極端子31が形成されたリード
線、4は8個の基体金属2上にスプレー等の方法で被着
形成された(Ba、8r、Oa) O等のアルカリ土類
金属酸化物からなる電子放射物質、51は耐熱性絶縁基
板1の他面の基体色M2に対向する部位にスパッタリン
グでタングステンの薄膜を被着して後写真製版によって
蛇行形状にした発熱体、認はS@の発熱体51と一体的
に被着成形され発熱体51を直列に接続する導線、詔は
発熱体51および導4152と共にヒータ5を構成する
ヒータ端子、6はステアタイト製の陰極容器、7は陰極
容′a6に植立された陰極ビン、8は陰極容器6に植立
されたヒータビン、9は陰極端子31と陰極ビン7およ
びヒータ端子部とヒータビン8とを接続する導線である
(Prior Art) Figures 8 to 5 are enlarged views of conventional cathode devices of this type. Substrate 2 is heat resistant M
K A base metal in which tungsten is deposited on one surface of the substrate l by a method such as sputtering and arranged in a straight line, and 3 is integrally deposited on the heat-resistant insulating substrate 1 in the same manner as the base metal 2. A lead wire 4 with a cathode terminal 31 formed at the tip thereof is made of an alkaline earth metal oxide such as (Ba, 8r, Oa), etc., which is deposited on the eight base metals 2 by a method such as spraying. 51 is a heating element formed by sputtering a thin tungsten film on the other side of the heat-resistant insulating substrate 1 at a portion opposite to the base color M2, and then forming a meandering shape by photolithography. A conductive wire that is molded integrally with the heating element 51 and connects the heating element 51 in series, a wire is a heater terminal that constitutes the heater 5 together with the heating element 51 and the conductor 4152, 6 is a cathode container made of steatite, and 7 is a cathode. The cathode bin erected in the container 'a6, 8 a heater bin erected in the cathode container 6, and 9 a conductive wire connecting the cathode terminal 31 and the cathode bin 7 and the heater terminal portion and the heater bin 8.

この従来のものでは、ヒータビン8の両端に電圧を印加
すると、発熱体51に電流が流れ、ジュール熱が下式に
示すように電流の2乗と発熱体51の電気抵抗と時間と
の櫂で決まる量で発生する。
In this conventional device, when a voltage is applied across the heater bin 8, a current flows through the heating element 51, and Joule heat is generated by the square of the current, the electrical resistance of the heating element 51, and time, as shown in the equation below. Occurs in a fixed amount.

Q ” I’xRXt ここでQは熱量、lは電流、Rは抵抗、tは時間を表す
Q ” I'xRXt Here, Q is the amount of heat, l is the current, R is the resistance, and t is the time.

この発生熱が熱伝導および熱輻射によって耐熱性絶縁基
板1を通して3個の基体金属2を加熱する。基体金Ps
2が約8000の動作温度まで加熱されると、電子放射
物質4の成分であるBaOが基体金属2であるWと還元
反応を起こして遊離Baが生じる。この遊離Daがドナ
ーとなって電子放射物質4から電子ビームが発射され、
カラーブラウン管の8色の螢光面を光らせる。
This generated heat heats the three base metals 2 through the heat-resistant insulating substrate 1 by thermal conduction and thermal radiation. Base gold Ps
When 2 is heated to an operating temperature of about 8,000 °C, BaO, which is a component of the electron emitting material 4, undergoes a reduction reaction with W, which is the base metal 2, to generate free Ba. This free Da becomes a donor and an electron beam is emitted from the electron emitting material 4,
Lights up the 8-color fluorescent surface of a color cathode ray tube.

この積層状陰極装置においては、基体金属2σ〕動作温
度を800℃、電子放射物質4の層からの収り出し電流
密度を0.5^/crdとして寿命試験を行った結果、
寿命時間は僅か4,000時間であった。なお寿命時間
の定義としては初期値の値0)50%の値迄に劣化する
時間とした。この短寿命の原因としてはBaOの還元反
応生成物であるバリウムタングステイトが基体金属2上
に生成されて電子放射物質4と基体金属2とσ〕還元反
応が起こりにくくなることも一因ではあるが、王に基体
金属2が薄膜でできているため非常に薄く、還元反応に
より早期に消耗してしまうためである。この改善のため
には、基体金属2であるWを長時間のスパッタリングで
厚く被着形成する手段もあるが、遺産上あるいは製造コ
スト上の制約があり実用上での問題があった。
In this laminated cathode device, a life test was conducted with the base metal 2σ] operating temperature at 800°C and the current density emitted from the layer of electron emitting material 4 at 0.5^/crd.
The life time was only 4,000 hours. Note that the life time is defined as the time required for deterioration to reach 0)50% of the initial value. One reason for this short life is that barium tungstate, which is a reduction reaction product of BaO, is generated on the base metal 2, making it difficult for the reduction reaction between the electron emitting material 4 and the base metal 2 to occur. However, since the base metal 2 is made of a thin film, it is very thin and is quickly consumed by the reduction reaction. In order to improve this, there is a method of thickly depositing W, which is the base metal 2, by long-term sputtering, but there are practical problems due to heritage or manufacturing cost constraints.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

従来の積層状陰極装置は以上のように構成されているた
め、電子放射特性が早期に劣化し始め実用上問題があっ
た。
Since the conventional laminated cathode device is constructed as described above, the electron emission characteristics begin to deteriorate early, which poses a practical problem.

この発明はこのような問題点を解消するためになされた
ものであり、電子放射特性の向上を目的とする改良され
た積層状陰極装置を提供しようとするものである。
The present invention was made to solve these problems, and it is an object of the present invention to provide an improved laminated cathode device with the purpose of improving electron emission characteristics.

〔課題を解決するための手段〕[Means to solve the problem]

こσ〕発明に係る積層状陰極装置は、耐熱性絶縁基板の
一面に被着形成された基体金属上に金網粉末焼結を被着
形成し、この金属粉末焼結層上に電子放射物質層を形成
すると共に、耐熱性絶縁基板の他面にヒータを形成した
ものである。
[σ] The laminated cathode device according to the present invention includes a sintered wire mesh powder deposited on a base metal deposited on one surface of a heat-resistant insulating substrate, and an electron emissive material layer on the sintered metal powder layer. In addition, a heater is formed on the other surface of the heat-resistant insulating substrate.

〔作用〕[Effect]

この発明においては、電子放射物質の下に金属粉末の焼
結層を設けたため、厚膜の焼結金属層が比較的簡単に形
成でき、その結果、電子放射特性が長期間にわたって維
持可能となる積層状陰極装置を得ることが可能となる。
In this invention, since a sintered layer of metal powder is provided under the electron emitting material, a thick sintered metal layer can be formed relatively easily, and as a result, the electron emission characteristics can be maintained for a long period of time. It becomes possible to obtain a laminated cathode device.

〔実施例〕〔Example〕

以下この発明の一実施例を第1図および第2図にもとづ
いて説明する。
An embodiment of the present invention will be described below with reference to FIGS. 1 and 2.

即ちyg1図において・】Oは耐熱性絶縁基体1上にス
パッタリングによって8ミクロンの厚さに被着後写真製
版によって所定の形状にエツチング加工して直径2fi
に形成されたニッケルからなる金属基体、11は平均粒
径が10ミクロンのニッケル粉末を生成分とし、機微の
シリコン、マグネシウムを含有する金属粉末をスクリー
ン印刷あるいはスプレーの方法によって約100ミクロ
ンの厚さに基体金@ 10上に被着し、水素中あるいは
真空算−気中で10000で10分間熱処理を施してニ
ッケル粉末相互およびニッケル粉末と基体金属ioであ
るニッケル薄膜とが焼結して形成された付着力および機
械的細度の大きい金属粉末焼結層である。
That is, in the yg1 diagram, O is deposited on the heat-resistant insulating substrate 1 to a thickness of 8 microns by sputtering, and then etched into a predetermined shape by photolithography to a diameter of 2fi.
The metal substrate 11 is made of nickel powder with an average particle size of 10 microns, and a metal powder containing fine silicon and magnesium is formed by screen printing or spraying to a thickness of about 100 microns. The nickel powder is deposited on the substrate gold@10 and heat-treated for 10 minutes at 10000C in hydrogen or vacuum air to sinter the nickel powder and the nickel thin film that is the base metal io. It is a metal powder sintered layer with high adhesion and mechanical fineness.

なおその他の構成は、第8図〜第5図に示す従来のもの
と同様であるので説明を省略する。
Note that the other configurations are the same as those of the conventional device shown in FIGS. 8 to 5, and therefore the description thereof will be omitted.

ここで電子放射物質4はスプレーあるいは筆塗の方法に
より金属粉末焼結層11上に60〜100ミクロンの厚
さにコーティングされる。また発熱体51は膜厚が8ミ
クロン、巾が0.2flに形成される。
Here, the electron emitting material 4 is coated on the metal powder sintered layer 11 to a thickness of 60 to 100 microns by spraying or brush painting. Further, the heating element 51 is formed to have a film thickness of 8 microns and a width of 0.2 fl.

このように構成されたものでは、発熱体51に電圧が印
加されると、発熱体51は従来のものと同様に、ジュー
ル熱によって発熱する0このジュール熱による輻射熱お
よび伝導熱により基体金属10および金属粉末焼結層1
1が加熱される。
With this configuration, when a voltage is applied to the heating element 51, the heating element 51 generates heat due to Joule heat, as in the conventional case. Metal powder sintered layer 1
1 is heated.

金属粉末焼結層11が約8000の高温にDO熱される
と、電子放射物質4層の成分である酸化ノ<リウムと金
属粉末焼結#11中に微量含有されている、例えばシリ
コンと次のような反応を起こす。
When the metal powder sintered layer 11 is heated to a high temperature of approximately 8,000 °C, the metal powder sintered layer 11 is heated to a high temperature of approximately 8,000 °C, and the sintered metal powder layer 11 is heated to a high temperature of about 8,000 ℃. cause a similar reaction.

4 BaO+ 81 = 2Ba 十B&1810m2
 BaO−1−81= zBa +8 土OIこれらの
反応で生じたBaがドナーとなって電子放射が行なわれ
る。基体金属10上に厚@構造の金属粉末焼結層11が
設けられているので、還元反応による金属粉末焼結層1
1の消耗も無く寿命特性を大幅に同上できた。
4 BaO+ 81 = 2Ba 10B & 1810m2
BaO-1-81=zBa+8 Soil OI Ba generated in these reactions serves as a donor, and electron emission is performed. Since the metal powder sintered layer 11 with a thick @ structure is provided on the base metal 10, the metal powder sintered layer 1 is formed by a reduction reaction.
There was no wear and tear, and the life characteristics could be significantly improved.

第2図は寿命試験特性を示すもので、寿命試験条件は陰
極温度が8000、取り出し電流0 、5 A/crd
とした。その結果、従来のものは、初期値の50%の値
まで電子放射特性が劣化する時間が4,000時間であ
ったが、この実施例のもので(ユ、12,000時間と
長寿命であった。さらにこの実施例のものは、スクリー
ン印刷手法により簡単に厚膜の金属粉末焼結)id 1
1を得ることが可能なため祉産性に富んでいる。
Figure 2 shows the life test characteristics, and the life test conditions were: cathode temperature 8000, extraction current 0, 5 A/crd.
And so. As a result, in the conventional model, it took 4,000 hours for the electron emission characteristics to deteriorate to 50% of the initial value, but in this example, it had a long life of 12,000 hours. In addition, this example can be easily sintered into a thick film of metal powder by screen printing method) id 1
Since it is possible to obtain 1, it has a high welfare value.

なお、ここでは基体金親10としてニンケル薄膜のもの
について説明したが、チタン等の他の金属であってもよ
い。
Although the gold base metal 10 is made of a thin film of Ninkel, it may be made of other metals such as titanium.

〔発明の効果〕〔Effect of the invention〕

上記のようにこの発明による積層状陰極製造は、Ali
 K金民上に金属粉末焼結層を介して電子放射物質を配
置したため、電子放射特性が同上すると共に1産性に優
れている。
As mentioned above, the laminated cathode fabrication according to the present invention can be performed using
Since the electron emitting material is disposed on the K metal through the metal powder sintered layer, the electron emitting properties are the same as above and the productivity is excellent.

【図面の簡単な説明】[Brief explanation of drawings]

第1図および第2図は、この発明の一実施例を示す図で
、第1図は要部拡大断面図、第2図は寿命特性図、第8
図〜第5図は従来のこの種檀層状陰極装置を示す図で、
第8図は平面図、第4図は要部平面図、第5図は断面図
である0 図中・1は耐熱性絶縁基板、4は電子放射物質、51は
発熱体、lOは基体金属、11は金属粉末焼結層である
。 なお図中同一符号は同一または相当部分を示す。
1 and 2 are diagrams showing an embodiment of the present invention, in which FIG. 1 is an enlarged sectional view of the main part, FIG. 2 is a life characteristic diagram, and FIG.
Figures 5 to 5 are diagrams showing a conventional layered cathode device of this kind.
Figure 8 is a plan view, Figure 4 is a plan view of main parts, and Figure 5 is a cross-sectional view. , 11 is a metal powder sintered layer. Note that the same reference numerals in the figures indicate the same or corresponding parts.

Claims (1)

【特許請求の範囲】[Claims] 耐熱性絶縁基板の一面に被着形成された基体金属、この
基体金属上に被着形成された金属粉末焼結層、この金属
粉末焼結層上に被着された電子放射物質、上記耐熱性絶
縁基板の他面に被着形成されたヒータを備えた積層状陰
極装置。
A base metal deposited on one surface of a heat-resistant insulating substrate, a metal powder sintered layer deposited on the base metal, an electron-emitting material deposited on the metal powder sintered layer, and the heat-resistant A laminated cathode device equipped with a heater formed on the other side of an insulating substrate.
JP1341404A 1989-12-26 1989-12-26 Lamination type cathode device Pending JPH03201345A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1341404A JPH03201345A (en) 1989-12-26 1989-12-26 Lamination type cathode device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1341404A JPH03201345A (en) 1989-12-26 1989-12-26 Lamination type cathode device

Publications (1)

Publication Number Publication Date
JPH03201345A true JPH03201345A (en) 1991-09-03

Family

ID=18345807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1341404A Pending JPH03201345A (en) 1989-12-26 1989-12-26 Lamination type cathode device

Country Status (1)

Country Link
JP (1) JPH03201345A (en)

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