JPH03201410A - Electronic part - Google Patents
Electronic partInfo
- Publication number
- JPH03201410A JPH03201410A JP1338488A JP33848889A JPH03201410A JP H03201410 A JPH03201410 A JP H03201410A JP 1338488 A JP1338488 A JP 1338488A JP 33848889 A JP33848889 A JP 33848889A JP H03201410 A JPH03201410 A JP H03201410A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- substrate
- vapor
- film
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000010931 gold Substances 0.000 claims abstract description 19
- 229910052737 gold Inorganic materials 0.000 claims abstract description 19
- 239000010409 thin film Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 11
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000011630 iodine Substances 0.000 claims abstract description 7
- 229910052740 iodine Inorganic materials 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 claims description 9
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 14
- 239000010408 film Substances 0.000 abstract description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052802 copper Inorganic materials 0.000 abstract description 10
- 239000010949 copper Substances 0.000 abstract description 10
- 229910052759 nickel Inorganic materials 0.000 abstract description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 6
- 229910021578 Iron(III) chloride Inorganic materials 0.000 abstract description 6
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 abstract description 6
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 4
- 238000007740 vapor deposition Methods 0.000 abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052786 argon Inorganic materials 0.000 abstract description 3
- 239000007772 electrode material Substances 0.000 abstract description 3
- 239000007789 gas Substances 0.000 abstract description 3
- 229910001120 nichrome Inorganic materials 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 238000009966 trimming Methods 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は電子部品に関するものであってフォトエツチン
グ方法を用いて製造した電子部品を提供するものである
。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to electronic components, and provides electronic components manufactured using a photoetching method.
電子部品の電極としては金が優れているが、価格が高い
ためニッケルや銅などと組み合わせて用いるのが一般的
である。機能性薄膜と接する電極は全以外のニッケルや
銅などの材料となり、電極と機能性薄膜の選択エツチン
グが不可能になることがあり、機能性薄膜の材料が制限
されることが多かった。Gold is excellent as an electrode for electronic components, but due to its high price, it is generally used in combination with nickel, copper, etc. The electrode in contact with the functional thin film is made of a material other than nickel or copper, which sometimes makes selective etching of the electrode and the functional thin film impossible, and the materials for the functional thin film are often limited.
〔この発明が解決しようとする問題点〕を極材料と機能
性薄膜の選択エツチングが不可能な組み合わせがあり機
能性ａ膜材料の選択にルリ限があった。[The problem to be solved by this invention] is that there are combinations of polar materials and functional thin films that cannot be selectively etched, and there are limits to the selection of functional a-film materials.
本発明は機能性薄膜と接する電極層を、エツチング液が
特定されている金層とすることにより機７１１性７４膜
との選択エツチングの幅を広げ電極材料との選択エツチ
ングを可能にしたものである。In the present invention, the electrode layer in contact with the functional thin film is made of a gold layer with a specified etching solution, thereby widening the range of selective etching with the functional 74 film and making it possible to perform selective etching with the electrode material. be.
本発明の実施例を図面を用いて説明する。第１図は本発
明による抵抗温度センサの構成の断面図である。Embodiments of the present invention will be described using the drawings. FIG. 1 is a sectional view of the configuration of a resistance temperature sensor according to the present invention.
第１図において原さ０．４ｍｒｎのアルミナ磁器基板を
絶縁基体とし、その表面に真空蒸着法にてニクロム２０
００人を蒸着し、続いてニッケルを７０００人蒸着人蒸
。この後、該蒸着済み！、（体をアルゴンガス４０００
Ｃ中で１時間の熱処理を行い感６Ｈ膜とした。続いて電
極として金を５００人、銅を１００００人蒸着し第２図
に示す構造の着膜基体を得た。In Figure 1, an alumina porcelain substrate with an original diameter of 0.4 mrn is used as an insulating base, and nichrome 20 is applied to the surface by vacuum evaporation.
00 people were deposited, followed by 7,000 people depositing nickel. After this, the vapor deposition has been completed! (The body was exposed to 4000 argon gas.
A heat treatment was performed in C for 1 hour to obtain a 6H film. Subsequently, gold was deposited by 500 evaporators and copper was deposited by 10,000 evaporators as electrodes to obtain a film-deposited substrate having the structure shown in FIG.
該蒸着基体上にフォトレジストにより第３図に示すよう
なパタンを形成した。この基体を塩化第二鉄溶液中に３
０秒間浸し銅層をエツチングした。次に沃素溶液中に３
０秒間浸漬し金層をエツチングし電極とした。更に塩化
第二鉄溶液を用い感温膜を第４図に示すパタンにエツチ
ングした。この後、第６図のようにレーザー光線を用い
抵抗値トリミングを行い２オームの抵抗値にした。この
後、絶縁保護膜としてエポキシ塗料を塗り抵抗温度セン
サを得た。本実施例では沃素溶液を用いたが、金のエツ
チングは沃化カリウム溶液でも同様な結果を得た。A pattern as shown in FIG. 3 was formed on the vapor deposition substrate using photoresist. This substrate was placed in a ferric chloride solution for 3
The copper layer was etched by dipping for 0 seconds. Then in the iodine solution 3
The gold layer was etched by dipping for 0 seconds to form an electrode. Furthermore, the temperature-sensitive film was etched into the pattern shown in FIG. 4 using a ferric chloride solution. Thereafter, as shown in FIG. 6, the resistance value was trimmed using a laser beam to obtain a resistance value of 2 ohms. After that, epoxy paint was applied as an insulating protective film to obtain a resistance temperature sensor. Although an iodine solution was used in this example, similar results were obtained for gold etching using a potassium iodide solution.
第１表に本発明による製造方法により製造した温度セン
サと電極として金のみを用いた温度センサの５０ット分
の抵抗値ばらつきを示した。Table 1 shows variations in resistance values for 50 tons of temperature sensors manufactured by the manufacturing method of the present invention and temperature sensors using only gold as electrodes.
この表で明らかなように本発明によるＴｔＪ造方決方法
電極として金のみを用いた方法と同様の結果をイ；）た
。また本発明による製造方法がら機能性被膜と接する金
層を除いた場合は銅層のエツチング時にニッケル層がエ
ツチングされ素子作製かできなかった。As is clear from this table, the TtJ fabrication method according to the present invention produced similar results to the method using only gold as an electrode. Furthermore, when the gold layer in contact with the functional coating was removed from the manufacturing method of the present invention, the nickel layer was etched during the etching of the copper layer, making it impossible to fabricate the device.
〔実施例２〕
本発明の実施例を図面を用いて説明する。第７図は本発
明による抵抗温度センサの構成の断面図である。[Example 2] An example of the present invention will be described with reference to the drawings. FIG. 7 is a cross-sectional view of the configuration of a resistance temperature sensor according to the present invention.
第７図において度さ０．４ｍｍのアルミナ磁器基板を絶
縁基体とし、その表面に真空蒸着法にて鉄７０００人を
蒸着し、続いてニッケルを２００ｏ人蒸零した。この後
、該蒸着済み基体をアルゴンガス４００ ’Ｃ中で１時
間の熱処理を行い感温膜とした。続いて電極として金を
５００Å、銅を１００００人、更に金を５００人蒸人蒸
第８図に示す構造の着膜基体を得た。In FIG. 7, an alumina porcelain substrate with a diameter of 0.4 mm was used as an insulating base, and 7,000 layers of iron were deposited on the surface by vacuum evaporation, followed by 200 layers of nickel. Thereafter, the vapor-deposited substrate was heat-treated for 1 hour in argon gas at 400'C to form a temperature-sensitive film. Subsequently, as electrodes, 500 Å of gold, 10,000 Å of copper, and 500 Å of gold were vaporized to obtain a substrate having a structure shown in FIG. 8.
該蒸着基体−１−にフォトレジストにより第９図に示す
ようなパタンを形成した。この基体を沃素溶液中に３０
秒間浸し金層をエツチングし、次に塩化第二鉄溶液中に
３０秒間浸し銅層をエツチングした。次に沃素溶液中に
３０秒間浸γλし金層をエツチングし電極とした。更に
塩化第二鉄溶液を用い感温膜を第１０図に示すパタンに
エツチングした。この後、第１２図のようにレーザー光
線を用い抵抗値トリミングを行い２オームの抵抗値にし
た。この後、絶縁保護膜としてエポキシ塗料を塗り抵抗
温度センサを得た。A pattern as shown in FIG. 9 was formed on the vapor deposition substrate-1 using photoresist. This substrate was placed in an iodine solution for 30 minutes.
A second dip etched the gold layer, followed by a 30 second dip in a ferric chloride solution to etch the copper layer. Next, the gold layer was etched by immersion in an iodine solution for 30 seconds to form an electrode. Furthermore, the temperature-sensitive film was etched into the pattern shown in FIG. 10 using a ferric chloride solution. Thereafter, as shown in FIG. 12, the resistance value was trimmed using a laser beam to obtain a resistance value of 2 ohms. After that, epoxy paint was applied as an insulating protective film to obtain a resistance temperature sensor.
本実施例では沃素溶液を用いたが、金のエツチングは沃
化カリウム溶液でも同様な結果を得た。Although an iodine solution was used in this example, similar results were obtained for gold etching using a potassium iodide solution.
本発明によれば電極と機能性薄膜との選択エツチングの
自由度が広がり、各種電極材料と各種機能性薄膜材料と
を組み合わせ使用でき、また従来の方法より金の使用量
を大幅に減らすことができ製造コストを下げられる。According to the present invention, the degree of freedom in selective etching of electrodes and functional thin films is increased, various electrode materials and various functional thin film materials can be used in combination, and the amount of gold used can be significantly reduced compared to conventional methods. can reduce manufacturing costs.
このように本発明は電子部品の製造方法としては画期的
な方法であり、工業的価（ｒｌは極めて高い。As described above, the present invention is an innovative method for manufacturing electronic components, and has an extremely high industrial value (rl).
第１図〜第１２図は本発明による抵抗温度センサの説明
図である。
図中各符号は下記のもの
を示す。
１ ：
絶縁基板
２：
ニクロム薄膜
３：
鉄薄膜
４： ニッケル薄膜
５：
金薄膜
６：
銅薄膜
７：
フ
オ
ト
レジス
ト８：
レーザート
リ
ミング溝
第４図
第５図
第６図
第１図
第２０
第３図
業７図
第８図
第９図1 to 12 are explanatory diagrams of a resistance temperature sensor according to the present invention. Each symbol in the figure indicates the following. 1: Insulating substrate 2: Nichrome thin film 3: Iron thin film 4: Nickel thin film 5: Gold thin film 6: Copper thin film 7: Photoresist 8: Laser trimming groove Figure 4 Figure 5 Figure 6 Figure 1 Figure 20 Figure 3 Figure 7 Figure 8 Figure 9
Claims (3)
形成する層の下層として該薄膜に接する面に金を蒸着し
、続いて少なくとも一層以上の電極を形成する材料を着
膜し多層電極となす。 この後、フォトエッチング方式を用いて電極パタンを形
成することを特徴とした電子部品の製造方法。(1) Deposit a functional thin film on an insulating substrate, then evaporate gold on the surface in contact with the thin film as the lower layer of the layer that will form the electrode, and then deposit at least one layer of material that will form the electrode. and a multilayer electrode. A method of manufacturing an electronic component, characterized in that an electrode pattern is then formed using a photo-etching method.
エッチング液として沃素又は沃化カリウムを用いた製造
方法。(2) A manufacturing method using iodine or potassium iodide as an etching solution for the gold layer in the manufacturing method according to claim (1).
より製造した電子部品。(3) An electronic component manufactured by the manufacturing method set forth in claims (1) and (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1338488A JPH03201410A (en) | 1989-12-28 | 1989-12-28 | Electronic part |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1338488A JPH03201410A (en) | 1989-12-28 | 1989-12-28 | Electronic part |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03201410A true JPH03201410A (en) | 1991-09-03 |
Family
ID=18318629
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1338488A Pending JPH03201410A (en) | 1989-12-28 | 1989-12-28 | Electronic part |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03201410A (en) |
-
1989
- 1989-12-28 JP JP1338488A patent/JPH03201410A/en active Pending
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