JPH03205752A - Ion implanter - Google Patents

Abstract

PURPOSE:To miniaturize a shield cabinet by arranging a tank section outside the shield cabinet, inserting a high-voltage bushing into the shield cabinet, connecting its high-voltage terminal to a high-potential section, and arranging an accelerating power source at the lower section of the high-potential section. CONSTITUTION:An insulating transformer 16 has a structure that a high-voltage bushing 16b on the secondary side is laterally (horizontally) protruded from a tank section 16a set to the ground potential. The tank section 16a is arranged outside a shield cabinet 17, the high-voltage bushing 16b is inserted into the shield cabinet 17 through the portion of a hole 17a, a high-voltage terminal is connected to a high-potential section 2, and power is fed to the high-potential section 2 from the ground potential section. An accelerating power source 15 is arranged in an insulating mount 3 at the lower section of the high-potential section 2. The periphery of the tank section 16a of the insulating transformer 16 is not required to be surrounded by the shield cabinet 17, and the shield cabinet 17 can be miniaturized.

Description

[Detailed Description of the Invention] [Field of Industrial Application] This invention relates to an ion implantation system in which a shield cabinet surrounds a high potential part that generates an ion beam and an acceleration tube that accelerates the ion beam from there. Regarding the equipment,
More specifically, the present invention relates to means for reducing the size of the shield cabinet.

[Conventional technology]

A conventional example of this type of ion implantation apparatus is shown in FIG.

An ion source and a high potential section 2 which usually includes an analysis electromagnet, a power source for the ion source, etc. (all not shown) and generates a required ion beam are supported by an insulating pedestal 3.

One end side of an acceleration tube 4 for accelerating the ion beam from there is connected to this high potential section 2, and the other end side of this acceleration tube 4 is normally set at ground potential.

The ion beam accelerated by the acceleration tube 4 is guided to a target (not shown), and ion implantation is performed.

Next to the high potential part 2, an acceleration power supply 5 is installed that applies an accelerating voltage (for example, about several tens to several hundred KV) to the high potential part 2 and the acceleration sensor 4. The section 2 is connected by a pipe 8.

Similarly, next to the high potential section 2, an isolation transformer 6 is installed which supplies power from the earth potential section to the high potential section 2 (more specifically, to the equipment inside the high potential section 2).

Normally, in the case of a one-stage structure of this type of isolation transformer 6, the main body part including the windings, iron core, etc. is connected to the tank part 6 which is at ground potential.
The secondary lead is housed in the high pressure bushing 6b inside the high pressure bushing 6b. Further, in the case of a multi-stage structure, the main body portion described above is divided into a tank portion 6a and a high-pressure bushing 6b, and the secondary lead thereof is housed in the high-pressure bushing 6b. In this conventional example, a high-voltage bushing 6b on the secondary side protrudes upward from the tank portion 6a, and the high-voltage terminal of this high-voltage bushing 6b and the high potential portion 2 are connected by a pipe 9. The necessary leads are threaded through it.

The high potential section 2, acceleration tube 4, acceleration power source 5, and isolation transformer 6 are surrounded by an electrical shield and a predetermined space insulation distance between them and the high voltage section. It also serves as a shield for X-rays emitted from part 2,
It is surrounded by a shield cabinet 7.

[Problem to be solved by the invention]

However, with the above configuration, although it is inevitable for the high potential section 2 and the acceleration tube 4 in the shield cabinet 7, installation space for the acceleration power source 5 and the isolation transformer 6 is required, and moreover, the high voltage section Since it is necessary to maintain a predetermined spatial insulation distance between the shield cabinet 7 and the shield cabinet 7, the shield cabinet 7 becomes very large. The miniaturization of this device has become a major issue for the following reasons.

In other words, ion implantation equipment is usually installed in an air-conditioned clean room with less dust, but since the construction cost of a clean room is high, it is important to reduce the area occupied by each device stored there. This is because it is important for reducing costs.

Therefore, the main object of the present invention is to reduce the size of the shield cabinet as described above.

[Means to solve the problem]

In order to achieve the above object, the ion implantation device of the present invention has a structure in which the isolation transformer has a high voltage bushing protruding sideways from its tank portion, the tank portion is disposed outside the shield cabinet, and the high voltage It is characterized in that a bushing is inserted into a shield cabinet and its high voltage terminal is connected to the high potential section, and the acceleration power source is disposed below the high potential section.

[Effect]

According to the above structure, since it is not necessary to surround the tank portion of the isolation transformer with a shield cabinet, the size of the shield cabinet can be reduced accordingly.

Further, by arranging the acceleration power source below the high potential section, there is no need for a dedicated space for the acceleration power source or a spatial insulation distance, and in this sense as well, the shield cabinet can be made smaller.

〔Example〕

FIG. 1 partially shows an ion implantation apparatus according to an embodiment of the present invention, in which (A) is a plan view thereof, and (B)
is its side view. This figure is drawn to approximately the same scale as FIG. 2 to facilitate comparison of the sizes of the shield cabinets. Further, parts equivalent to those of the conventional example shown in FIG. 2 are given the same reference numerals, and the differences from the conventional example will be mainly explained below.

In this embodiment, an isolation transformer l6 corresponding to the above-mentioned isolation transformer 6 is connected to a tank portion 16 at ground potential.
The high pressure bushing 16b on the secondary side protrudes laterally (horizontally) from a. Then, this tank part 16a is arranged outside the shield cabinet 7}17, and the high voltage bunsing 16b is inserted into the shield cabinet 17 through the hole 17a, and its high voltage terminal is connected to the high potential part 2 mentioned above. Power is supplied to the high potential section 2 from the ground potential section.

Further, an acceleration power source 15 corresponding to the acceleration power source 5 described above is arranged under the high potential section 2, more specifically, in the insulating frame 3 under the high potential section 2. In that case, in order to carry out such an arrangement effectively, it is preferable that the accelerating power source 15 is also miniaturized as in this embodiment.

According to the above structure, it is no longer necessary to surround the tank portion 16a of the isolation transformer 16 with the shield cabinet 17 with a predetermined spatial insulation distance as in the conventional example, so that the shield cabinet 17 can be made smaller. It is possible to aim for

Furthermore, by arranging the acceleration power source l5 at the lower part of the high potential section 2, the acceleration power source l5 can be placed in the shield cabinet 17.
A dedicated installation space is no longer required, and there is no need to provide a dedicated space insulation distance between the high voltage section and the shield cabinet 17, so from this point of view as well, the shield cabinet 17 can be made smaller. can.

More specifically, according to the embodiment shown in FIG. 1, the planar area of the shield cabinet 17 can be reduced to about 50%, and the volume can be reduced to about 45%, compared to the conventional example shown in FIG.

By reducing the size of the shield cabinet 17 in this way, not only the cost itself can be reduced, but also
The cost can be reduced by reducing the size of the clean room in which it is stored.

〔Effect of the invention〕

As described above, according to the present invention, there is no need to surround the tank part of the isolation transformer with a shield cabinet.
Furthermore, since there is no need for a space dedicated to an acceleration power source or a spatial insulation distance within the shield cabinet, the shield cabinet can be significantly downsized.

As a result, not only the cost of the shield cabinet itself can be reduced, but also the clean room in which it is housed can be made smaller to reduce the cost.

[Brief explanation of drawings]

FIG. 1 partially shows an ion implantation apparatus according to an embodiment of the present invention, in which (A) is a plan view thereof, and (B)
is a side view. FIG. 2 partially shows an example of a conventional ion implantation device, and (A) is a plan view thereof;
B) is its side view. 2...High potential part, 3...Insulation stand, 4...Acceleration tube, 15...Acceleration power supply, 16...Isolation transformer, 16a
...Tank part, 16b...High pressure pushing, 17.
... Shield cabinet.

Claims (1)

[Claims] (1) A high potential section that includes an ion source and generates an ion beam, an acceleration tube that is connected to this high potential section and accelerates the ion beam from there, and an acceleration voltage applied to the high potential section and the acceleration tube. an insulating transformer that supplies power from an earth potential part to the high potential part and has a high voltage bushing protruding from a tank part at earth potential; and at least the high potential part and the acceleration tube. In the ion implantation apparatus, the isolation transformer has a structure in which a high-voltage bushing protrudes sideways from a tank portion of the isolation transformer, and the tank portion is disposed outside the shield cabinet, and the high-voltage bushing An ion implantation apparatus characterized in that the ion implanter is inserted into a shield cabinet and its high voltage terminal is connected to the high potential section, and the acceleration power source is disposed below the high potential section.