JPH0320719A - Optical write type liquid crystal light valve - Google Patents

Optical write type liquid crystal light valve

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Publication number
JPH0320719A
JPH0320719A JP15522589A JP15522589A JPH0320719A JP H0320719 A JPH0320719 A JP H0320719A JP 15522589 A JP15522589 A JP 15522589A JP 15522589 A JP15522589 A JP 15522589A JP H0320719 A JPH0320719 A JP H0320719A
Authority
JP
Japan
Prior art keywords
liquid crystal
light valve
light
layer
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15522589A
Other languages
Japanese (ja)
Inventor
Shuhei Yamamoto
修平 山本
Naoki Kato
直樹 加藤
Teruo Ebihara
照夫 海老原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP15522589A priority Critical patent/JPH0320719A/en
Publication of JPH0320719A publication Critical patent/JPH0320719A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To write an image with high storage performance and high resolution while suppressing its lateral expansion by driving a photoconductive layer, formed on the transparent electrode on an optical write side, to a size within a specific range. CONSTITUTION:Transparent electrodes 3 and 4 are liquid crystal orienting films 5 and 6 are formed on the surfaces of transparent substrates 1 and 2 and a ferroelectric liquid crystal layer 7 is inserted between the films 5 and 6. Then the photoconductive layer 9 which is divided by insulators 10 to a 4 - 40mum<2> size is formed on the electrode on the optical write side. The light valve which is thus formed is applied with a DC bias voltage generated by superposing a high-frequency AC waveform to write an image, and then a sharp image of the same level as that when only a direct current is applied to an undivided light valve is obtained. Further, an excellent memory having no expansion of the liquid crystal molecule array state of an unwritten part is obtained. Consequently, high-resolution writing which is free from DC defect is enabled.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、光プリンタの中間記録媒体、画像表示装置、
光シャンタ、画像処理装置、光情報処理システム等に応
用される強誘電性液晶を用いた光書込型液品ライトバル
ブに関するものである。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an intermediate recording medium of an optical printer, an image display device,
The present invention relates to an optically writable liquid light valve using ferroelectric liquid crystal that is applied to optical shunters, image processing devices, optical information processing systems, and the like.

〔発明の概要〕[Summary of the invention]

本発明は、暗時には高抵抗率、光照射時には高い導電率
を示す高感度な光導7J.層と、双安定メモリ性を有す
る強誘電性液晶を組み合わせた光書込型液品ライトバル
ブの光導電層の構造に関するものである.光書込型液晶
ライトバルブに用いられる光導電膜は従来、スパッタ法
、真空蒸着法、グロー放電分解法等により、光書込側電
極上に全面均一に形戒されていたが、光書込時に交流駆
動波形を印加すると光導電層のインピーダンス低下が起
こり、書込むべきパターンが横方向に広がり、分解能を
損なうという問題をかかえていたが、本発明のように、
フォトリソグラフィーによるエッチング法、マスク蒸着
法、マスクスパソタ法などを用いて、光導電層を4μ一
から400μm2の範囲の大きさに分割する事により、
分解能を飛躍的に向上させる事が可能となり、極めて高
性能な光書込型液晶ライトバルブを提供することができ
る。
The present invention provides highly sensitive light guide 7J. This paper concerns the structure of the photoconductive layer of an optically writable liquid light valve that combines a ferroelectric liquid crystal with bistable memory properties and a ferroelectric liquid crystal with bistable memory properties. Conventionally, photoconductive films used in optically written liquid crystal light valves have been formed uniformly over the entire surface of the optical writing side electrode by sputtering, vacuum evaporation, glow discharge decomposition, etc. At times, when an AC driving waveform is applied, the impedance of the photoconductive layer decreases, causing the pattern to be written to spread laterally, impairing resolution, but as in the present invention,
By dividing the photoconductive layer into sizes ranging from 4μm to 400μm2 using photolithographic etching method, mask evaporation method, mask spattering method, etc.
It becomes possible to dramatically improve the resolution, and it is possible to provide an extremely high-performance optical writing type liquid crystal light valve.

又、光導電膜としては、光感度が高く、キャリア移動度
の大きな水素化アモルファスシリコンが極めて有効であ
り、強誘電性液晶と組み合わせる事により、ハロゲン光
等による書込みは勿論の事、低出力の半導体レーザによ
っても極めて高速、高解像、高コントラストな書込みが
可能な光書込型液晶ライトバルプを実現する事ができる
In addition, hydrogenated amorphous silicon, which has high photosensitivity and large carrier mobility, is extremely effective as a photoconductive film, and by combining it with ferroelectric liquid crystal, it can be used not only for writing with halogen light, but also for low-power writing. It is also possible to realize an optical writing type liquid crystal light bulb that can perform extremely high-speed, high-resolution, and high-contrast writing using a semiconductor laser.

〔従来の技術〕[Conventional technology]

従来から光書込型ライトバルブは、アドレノシング法や
使用する液晶の表示モード等に様々な検討が重ねられて
きている.中でも、ツイストネマティックモードや、電
界制御複屈折モードと光導電膜を組み合わせた液晶ライ
トバルブはほぼ実用レベルに近い特性を有しており、光
情報処理用インコヒーレント・コヒーレント変換器等に
用いられてきている.しかしながら、これらのモードで
は書込み像のメモリ性はなく、書込み光を取り去ると像
は消滅してしまう.レーザ光等のビームスポットでデジ
タル的に書込む場合も、書込み部分の像の保持時間が短
い為、解像度を上げる事ができず、高解像度の大画面デ
ィスプレイを得ようとすると、全く同し箇所を高速に何
度も重ね書きする必要があり、その為の超高速、超高精
度なレーザスキャナ及び超高感度の光導電膜の開発が不
可欠となり、これを実現するのは極めて困難な事である
。コレステリソクーネマテイック相転移モードと光導電
膜を組み合わせたものは、メモリ性は有するが、書込み
速度が遅く、コントラストが低いという欠点を有してい
た。
For optical writing type light valves, various studies have been conducted on the adrenosing method and the display mode of the liquid crystal used. Among them, liquid crystal light valves that combine twisted nematic mode, electric field-controlled birefringence mode, and photoconductive film have characteristics close to practical level, and are used in incoherent-coherent converters for optical information processing, etc. ing. However, in these modes, there is no memorability of the written image, and the image disappears when the writing light is removed. Even when writing digitally with a beam spot such as a laser beam, the retention time of the image of the written area is short, so it is not possible to increase the resolution, and when trying to obtain a high-resolution large screen display, it is impossible to increase the resolution. It is necessary to overwrite the image many times at high speed, which requires the development of an ultra-high-speed, ultra-high-precision laser scanner and an ultra-sensitive photoconductive film, which is extremely difficult to achieve. be. A combination of the cholesteri-Sochnematic phase transition mode and a photoconductive film has memory properties, but has the disadvantages of slow writing speed and low contrast.

近年では、高速応答、メモリ性、高コントラスト、広視
野角等優れた特性を発現できる可能性のある強誘電性液
晶に着目し、強誘電性液晶と光導1i膜とを組み合わせ
た光書込型液晶ライトハルブが活発に研究されるように
なってきた。
In recent years, we have focused on ferroelectric liquid crystals that have the potential to exhibit excellent properties such as high-speed response, memory performance, high contrast, and wide viewing angles, and have developed an optical writing type that combines ferroelectric liquid crystals and photoconductive 1i films. Liquid crystal light halves are now being actively researched.

何れの場合も、光導電膜は通常光書込例のITO等の透
明電極上に、スパソタ法、真空蒸着法、グロー放電分解
法等の方法により全面均一に数一〜数10一の厚さで形
成されていた. 〔発明が解決しようとする課題〕 しかしながら、前述の光書込型液晶ライトバルプに必要
な情報を光書込みする際は、書込み駆動波形として、殆
んどの場合交流電圧波形を用いており、大きな自発分極
を有し、極性によって自発分極の反転に伴う分子の反転
を起こす強誘電性液晶を用いた場合でも、配向欠陥を防
ぐ、あるいは信頼性を高める為に、100tlzから5
Q k fiz程度の交流波形を重畳した直流バイアス
電圧波形を用いる事が多い。しかしながら、交流電圧を
印加すると、光導電膜のインピーダンスが低くなり、光
書込み像が横方向に広がり、解像度を低下させてしまう
という問題があった。時に強誘電性液晶を用いる場合に
は、液晶層の厚みが薄い為、高解像書込みが期待されて
いるが、期待通りの解像度を得る事は困難であった.又
、強誘電性液晶は層方向に分子が流れやすく、メモリ性
が損なわれてしまいやすいという欠点を有していた。
In either case, the photoconductive film is usually coated onto a transparent electrode made of ITO or the like for optical writing using a method such as a spasoter method, a vacuum evaporation method, or a glow discharge decomposition method, to a thickness of several tens to several tens of meters uniformly over the entire surface. It was formed of. [Problems to be Solved by the Invention] However, when optically writing the necessary information to the optically written liquid crystal light bulb described above, an AC voltage waveform is used as the write drive waveform in most cases, and large spontaneous polarization occurs. Even when using ferroelectric liquid crystals, which have molecular inversion due to spontaneous polarization reversal depending on the polarity, in order to prevent alignment defects or improve reliability, it is necessary to
A DC bias voltage waveform on which an AC waveform of approximately Q k fiz is superimposed is often used. However, when an alternating current voltage is applied, the impedance of the photoconductive film becomes low, the optically written image spreads in the lateral direction, and there is a problem in that the resolution decreases. When using ferroelectric liquid crystals, high-resolution writing is expected because the liquid crystal layer is thin, but it has been difficult to obtain the expected resolution. Furthermore, ferroelectric liquid crystals have the disadvantage that molecules tend to flow in the layer direction, which tends to impair memory properties.

〔課題を解決するための手段〕[Means to solve the problem]

上記問題を解決するために、本発明は光書込み側透明電
極上に形成される光導電層を、4μm2から400μ一
の大きさに分割する事により、横方向への書込み画像の
広がりを押え、且つメモリ性を高める事によって、高解
像書込みを可能ならしめたものである。
In order to solve the above problem, the present invention divides the photoconductive layer formed on the transparent electrode on the optical writing side into sizes of 4 μm to 400 μm, thereby suppressing the spread of the written image in the lateral direction. In addition, high-resolution writing is made possible by improving memory performance.

〔作用〕[Effect]

本発明の液晶ライトバルブは、一度液晶ライトバルブの
書込面全面を光照射し、光導電層の明時の閾稙電圧より
も十分に高い直流ハイアス電圧あるいは、1001{z
から5Qkflzの交流電圧を重畳した直流バイアス電
圧を印加して強誘電性液晶を一方向の安定状態迄揃える
、もしくは光照射無しで、暗時の闇値電圧よりも十分に
高い直流バイアス電圧あるいは、100Bzから50k
Hzの交流電圧を重畳した直流バイアス電圧を印加して
強誘電性岐晶を一方向の安定状態迄揃える第1の工程を
経た後、光照射なしで、暗時には闇値電圧以下であり、
光照射時には闇値電圧以上となる逆極性の直流バイアス
電圧あるいは10 0 hから5QkHzの交流電圧を
印加しなからレーザ光等によって、光書込みを行う第2
の工程によって、画像書込みを行う。光照射を受けた領
域の光導電層には光キャリアが発生し、発生したキャリ
アは直流バイアス電圧により電界方向にドリフトし、そ
の結果光導電層の抵抗が下がり、光照射を受けた領域に
は闇値電圧以上の逆極性の電圧が印加され、自発分極の
反転に伴う液晶分子の反転が起こり、もう一方の安定状
態に書き込まれる事になる.このようにして形成された
画像は、第1の工程によって揃えられた液晶分子の配列
方向(又はそれと直角方向)に偏光軸を合わせた直線偏
光の投影光の照射及び反射層による反射光の偏光方向に
対し偏光軸が直交(又は平行)するように配置された検
光子を通した投影によりスクリーン上に読み出すことが
できる.交流電圧を重畳した波形を用いれば、配向膜近
傍の液晶分子配列が壊れ、液晶分子が印加電圧に対して
応答しなくなる、いわゆるDC欠陥と称する構造欠陥発
生の問題を解決でき、液晶ライトバルブの信頼性を高め
る事が可能である。
In the liquid crystal light valve of the present invention, once the entire writing surface of the liquid crystal light valve is irradiated with light, a DC high voltage sufficiently higher than the threshold voltage of the photoconductive layer during the bright period or 1001{z
Apply a DC bias voltage superimposed with an AC voltage of 5Qkflz to align the ferroelectric liquid crystal to a stable state in one direction, or apply a DC bias voltage sufficiently higher than the dark value voltage without irradiation with light, or, 100Bz to 50k
After going through the first step of applying a DC bias voltage superimposed with an AC voltage of Hz to align the ferroelectric branch crystals to a stable state in one direction, the voltage is below the dark value voltage in the dark without light irradiation,
At the time of light irradiation, a DC bias voltage of opposite polarity or an AC voltage of 100 h to 5QkHz, which is higher than the dark value voltage, is not applied, and optical writing is performed using a laser beam or the like.
Image writing is performed through the steps. Photocarriers are generated in the photoconductive layer in the area irradiated with light, and the generated carriers drift in the direction of the electric field due to the DC bias voltage.As a result, the resistance of the photoconductive layer decreases, and in the area irradiated with light, photocarriers are generated. A voltage of opposite polarity higher than the dark value voltage is applied, and the liquid crystal molecules are reversed due to the reversal of spontaneous polarization, and the other stable state is written. The image formed in this way consists of irradiation with linearly polarized projection light whose polarization axis is aligned with the alignment direction (or perpendicular direction) of the liquid crystal molecules aligned in the first step, and polarization of the reflected light by the reflective layer. It can be read out on a screen by projection through an analyzer placed so that the polarization axis is perpendicular (or parallel) to the direction. By using a waveform in which an alternating current voltage is superimposed, it is possible to solve the problem of structural defects, so-called DC defects, where the arrangement of liquid crystal molecules near the alignment film is broken and the liquid crystal molecules no longer respond to the applied voltage. It is possible to improve reliability.

〔実施例〕〔Example〕

以下に本発明の内容を、図面に用いて詳細に説明する。 The contents of the present invention will be explained in detail below using the drawings.

第1図は本発明による液晶ライトバルブの構造を示す断
面図である。
FIG. 1 is a sectional view showing the structure of a liquid crystal light valve according to the present invention.

透明基板1.2は表面に透明電極3,4.液晶配向膜5
.6が設けられている。透明基板1,2は、その配向膜
5.6を対向させ、il!!誘電性液晶N7を狭持して
いる。
The transparent substrate 1.2 has transparent electrodes 3, 4 . Liquid crystal alignment film 5
.. 6 is provided. The transparent substrates 1 and 2 have their alignment films 5.6 facing each other, and il! ! A dielectric liquid crystal N7 is sandwiched between them.

光書込みを行う側の透明電極4の上では、光導電層9が
絶縁物10により分割された形で形成され、その上に光
反射層としての誘電体ミラー8が積層されている。
On the transparent electrode 4 on the side where optical writing is performed, a photoconductive layer 9 is formed divided by an insulator 10, and a dielectric mirror 8 as a light reflecting layer is laminated thereon.

上記のような液晶ライトバルブによれば、外面からの書
込み光l1によって強誘電性液晶層7に書込みが行われ
、また書込まれた光学情報は、投影光l2により読み出
すことができる。
According to the liquid crystal light valve as described above, writing is performed on the ferroelectric liquid crystal layer 7 by the writing light l1 from the outer surface, and the written optical information can be read out by the projection light l2.

第2図は、本発明による光導電層の分割構造を示す模式
図であり、13a.l3bはそれぞれ正方形、円形に分
割された光導電層、14a,14bは分割された間隙を
埋める為の絶縁物である。
FIG. 2 is a schematic diagram showing a divided structure of a photoconductive layer according to the present invention, and 13a. 13b is a photoconductive layer divided into squares and circles, respectively, and 14a and 14b are insulators for filling the divided gaps.

実施例においては、先ず透明基板1.2として板を用意
し、透明電極3。4として500人の厚さのITOyi
明電極を形成した. 光書込側透明電極層4上には、SiF4を主体とするガ
スを放電分解して厚さ4−のイントリンシソクな水素化
アモルファスシリコン(a−Si:H)を形成し、光導
電層9とした。その後、フォトリソグラフィー法を用い
て、13aに示すように4n×4一の大きさに光導電層
を分割した。その後、表面のレベリングの為、テトラヒ
ド口フランに溶解したポリカーボネイト冫容冫夜を、ド
クターフ゛レードを用いて0.3一の厚さでコーティン
グし、エッチングされた部分の隙間を埋め絶縁層10,
 143を形成し、光導電層の分割を行った。このよう
にして形成した分割された光導電層の上に、珪素(St
)と二酸化珪素(Sing)を15Ji積層して誘電体
ミラー8を形成した。誘電体ミラー8及び投影側の透明
基板3上に、一酸化珪素(Sin)を、基板の法線方向
に対して82度の角度で、且つ蒸着の法線方向にセント
した膜厚計で、2000人の厚さに斜方蒸着して液晶配
向層5,6を形成した. 透明基板1.2は、その配向層5,6を対向させ、直径
1.5−のガラス球を加えた接着剤よりなるスベーサを
介して間隙を2. 01!IIIにt!II御され接着
し、@誘電性液晶7を狭持するようにした。封入した強
誘電性液晶組戊物は、エステル系スメクチソクC液晶混
合物に光学活性物質を添加して強誘電性岐晶組威物とし
たものであり、エステル系SmC液晶混合物として、4
−((4“−オクチル)フェニル)安患香酸(3″−フ
ルオロ、4”−オクチルオキシ)フェニルエステルと、
4−((4’−オクチルオキシ)フェニル)安息香M(
3″−フルオロ54”−オクチルオキシ)フェニルエス
テルをl:1に混合したものを用い、これに光学活性物
質として5−オクチルオキシナフタレンカルボン酸、1
′−シアノエチルエステルを、25重量%を加えて強誘
電性液晶組成物としたものを用いた。
In the example, first, a plate is prepared as the transparent substrate 1.2, and ITOyi with a thickness of 500 mm is used as the transparent electrode 3.4.
A bright electrode was formed. On the optical writing side transparent electrode layer 4, a 4-thick intrinsic hydrogenated amorphous silicon (a-Si:H) is formed by discharge decomposition of a gas mainly composed of SiF4, and the photoconductive layer 9 and did. Thereafter, using a photolithography method, the photoconductive layer was divided into 4n×4 pieces as shown in 13a. Thereafter, in order to level the surface, a polycarbonate film dissolved in tetrahydrofuran was coated with a thickness of 0.3 mm using a doctor blade, and the gaps between the etched parts were filled and the insulating layer 10,
143 was formed, and the photoconductive layer was divided. On the thus formed divided photoconductive layer, silicon (St
) and silicon dioxide (Sing) were laminated to form a dielectric mirror 8. Silicon monoxide (Sin) was placed on the dielectric mirror 8 and the transparent substrate 3 on the projection side at an angle of 82 degrees to the normal direction of the substrate, and with a film thickness meter centered in the normal direction of vapor deposition. The liquid crystal alignment layers 5 and 6 were formed by oblique vapor deposition to a thickness of 2000 mm. The transparent substrate 1.2 has its alignment layers 5 and 6 facing each other, and a gap of 2.5 mm is separated by a spacer made of adhesive to which glass spheres with a diameter of 1.5 mm are added. 01! III to t! The dielectric liquid crystal 7 was held between the two by adhesion. The encapsulated ferroelectric liquid crystal composite is a ferroelectric liquid crystal composite obtained by adding an optically active substance to an ester-based SmC liquid crystal mixture.
-((4"-octyl)phenyl)benzoic acid (3"-fluoro, 4"-octyloxy)phenyl ester,
4-((4'-octyloxy)phenyl)benzoic M(
A 1:1 mixture of 3"-fluoro54"-octyloxy)phenyl ester was used, and to this was added 5-octyloxynaphthalenecarboxylic acid and 1 as optically active substances.
A ferroelectric liquid crystal composition was prepared by adding 25% by weight of '-cyanoethyl ester.

第3図は、このようにして形成された光書込型液品ライ
トバルブを用い、光書込側から全面ハロゲン光による光
照射を行いながら電極間に電圧を印加した時の電圧一光
反射率特性を示したものである.この場合光学導電層は
全面にわたり導通状態(低抵抗状Li)となっており、
印加電圧は殆んど強誘電性液晶に印加される。電圧波形
は0.1Hz,20VF−Pの三角波を用いた.図から
明らかなように本発明による液晶ライトバルブは、比較
的明瞭な閾値特性と双安定性を示している。しかしなが
ら、この液晶ライトバルプを偏光顕微鏡で観察すると、
経時的に液晶分子の反転が起こりにくくなる、いわゆる
DC欠陥領域が広がり、分子の配列が不均一になって全
体のコントラストが低下してくる事が確認された。
Figure 3 shows the voltage-light reflection when a voltage is applied between the electrodes while irradiating the entire surface with halogen light from the optical writing side using the optically written liquid light valve formed in this way. This shows the rate characteristics. In this case, the optical conductive layer is in a conductive state (low resistance Li) over the entire surface,
The applied voltage is mostly applied to the ferroelectric liquid crystal. The voltage waveform used was a 0.1Hz, 20VF-P triangular wave. As is clear from the figure, the liquid crystal light valve according to the present invention exhibits relatively clear threshold characteristics and bistability. However, when observing this liquid crystal light bulb with a polarizing microscope,
It was confirmed that over time, the so-called DC defect region, in which inversion of liquid crystal molecules becomes difficult to occur, expands, the arrangement of molecules becomes non-uniform, and the overall contrast deteriorates.

第4図は、同じ光書込型液晶ライトバルブを用い、ハロ
ゲン光を全面照射しながら、3kHz,20V.,の矩
形波を重畳しながら、20VP−Pの三角波を印加した
時の電圧一光反射率特性を示したものである.図から明
らかなように、三角波に交流を重畳する事により、より
明瞭な双安定性が現れてくる事が理解できる.又、偏光
顕微鏡観察においても全体の液晶分子の配列は均一であ
り、DC欠陥の発生は認められなかった。
FIG. 4 shows the same optical writing type liquid crystal light valve being used to illuminate the entire surface with halogen light at 3kHz, 20V. This figure shows the voltage-light reflectance characteristics when a 20VP-P triangular wave is applied while superimposing a rectangular wave of . As is clear from the figure, it can be seen that by superimposing alternating current on the triangular wave, more clear bistability appears. Also, when observed under a polarizing microscope, the alignment of the liquid crystal molecules was uniform throughout, and no DC defects were observed.

次いで、光導電層を分割しない従来の光書込型液晶ライ
トバルブを用い、第5図に示すように、偏光顕微鏡を用
いたシステムによって、マスクl7に形成された画像を
液晶ライトバルブ18に光書込みを行った.この場合も
、直流バイアスのみによる書込みでは、DC欠陥が発生
し、書き込まれた画倣は、液晶分子配列の不均一性に伴
うコントラストむらが発生し、交流を重畳した場合は、
そのような現象が発生せず良好なコントラストの画像を
書き込む事が可能であった。しかしながら、書込時の画
像の端面のシャープさは直流のみの場合よりも悪く、少
し滲んだような形で書込まれ、書込み後印加電圧をオー
ブン状態にして画像をメモリすると、強誘電性液晶の層
方向に、非書込み部の液晶分子配列状態が広がり、あま
り良好なメモリ性を示さなかった. 同様な手段により、本発明による光導電層が4μ×4−
の大きさで分割された光書込型ライトバルブを用いて、
25VP−Pの交流波形を重畳した直流バイアス電圧を
印加しながら光書込みを行ったところ、画像の端面部分
のシャープさは、光導電膜を分割しない従来の光書込型
液晶ライトバルブを用い、直流のみによって書込んだ時
と、ほぼ同等のレベルであった。また、書込後電圧をオ
ープン状態にしてメモリさせると、層方向への非書込み
部の液晶分子配列状態の広がりが無く、極めて良好なメ
モリ状態をとる事が判明した.光導電層の分割形状は、
第2図138に示す正方形、第2図13bに示す円形の
他、長方形等何れでも良く、分割する大きさは解像度の
点から、4μm2から400μ一が適正である。
Next, using a conventional optical writing type liquid crystal light valve that does not divide the photoconductive layer, the image formed on the mask l7 is exposed to the liquid crystal light valve 18 by a system using a polarizing microscope, as shown in FIG. I wrote. In this case as well, when writing with only a DC bias, DC defects occur, and the written image has uneven contrast due to non-uniform alignment of liquid crystal molecules, and when alternating current is superimposed,
It was possible to write an image with good contrast without such a phenomenon occurring. However, the sharpness of the edge of the image during writing is worse than when only DC is used, and it is written in a slightly smeared form. The alignment state of liquid crystal molecules in the non-written area spread in the layer direction, and the memory properties were not very good. By similar means, a photoconductive layer according to the invention of 4μ×4−
Using an optical writing type light valve divided by the size of
When optical writing was performed while applying a DC bias voltage with a 25VP-P AC waveform superimposed, the sharpness of the edge portion of the image was confirmed by using a conventional optical writing type liquid crystal light valve that does not divide the photoconductive film. The level was almost the same as when writing using direct current only. Furthermore, it was found that when the voltage is left open after writing and memory is performed, the alignment state of liquid crystal molecules in the non-written area does not spread in the layer direction, resulting in an extremely good memory state. The division shape of the photoconductive layer is
In addition to the square shown in FIG. 2 138, the circular shape shown in FIG. 2 13b, any rectangular shape may be used, and from the viewpoint of resolution, the appropriate dividing size is 4 μm 2 to 400 μm.

光導電膜を分割形成する方法としては、前述のフォトリ
ソグラフィー法の他、微細なマスクを置いて、真空蒸着
やスパンタを行う方法等がある.分割は完全に行われる
方が望ましいが、部分的につながっていても殆んど問題
はない。但し、光導電層間の間隙が広すぎると有効面積
が小さくなってしまい、逆に分解能を損ねてしまう。
Methods for forming the photoconductive film in sections include, in addition to the above-mentioned photolithography method, methods such as vacuum evaporation and spuntering using a fine mask. Although it is preferable that the division be completed completely, there is almost no problem even if the division is partially connected. However, if the gap between the photoconductive layers is too wide, the effective area will become small, which will conversely impair resolution.

そこで、光導電層間の間隙は、l〜2一程度に?さえる
事が望ましい。光導電層としては、暗時の抵抗が高く、
光照射時の抵抗が著しく低下する高感度な水素化アモル
ファスシリコン(a−Si:H)が本光書込型液晶ライ
トバルブに適しており、フォトリソ法による分割も容易
に行う事ができる。この他にもITO上にマスクを置き
、CdS,  Se−Te等の真空蒸着を行って、分割
した光導電層を形成しても良い.分割された光導電層間
の間隙を埋める絶縁物としては、ポリカーボ不イトの他
、ポリイミド、ポリアミド等比較的耐熱性が良く抵抗率
の高い有機高分子材料や、SiO■. ZrO等の無機
材料でも良い. a−Si:Hの膜厚としては、ビンホールが存在しない
こと、光感度を一様にする事及びa−Si:Hの暗時の
抵抗率は1011〜10′!Ω0であり、強誘電性液晶
の抵抗率も10”〜IQ1!Ωcra程度である事から
、分圧比を考慮すると強誘電性液晶層の厚さと同程度の
2一以上が望ましく、又、解像度を考慮すれば、10J
IMが上限と考えられる。
Therefore, the gap between the photoconductive layers should be approximately 1 to 2. It is desirable to keep it in check. As a photoconductive layer, it has high resistance in the dark,
Highly sensitive hydrogenated amorphous silicon (a-Si:H), which has a significantly lower resistance when irradiated with light, is suitable for this optically written liquid crystal light valve, and can be easily divided by photolithography. Alternatively, a mask may be placed on ITO and vacuum evaporation of CdS, Se-Te, etc. may be performed to form divided photoconductive layers. Insulators that fill the gaps between the divided photoconductive layers include, in addition to polycarbonite, organic polymer materials with relatively good heat resistance and high resistivity such as polyimide and polyamide, as well as SiO. Inorganic materials such as ZrO may also be used. The film thickness of a-Si:H is such that there are no bin holes, the photosensitivity is uniform, and the resistivity of a-Si:H in the dark is 1011 to 10'! Ω0, and the resistivity of the ferroelectric liquid crystal is about 10” to IQ1!Ωcra, so when considering the partial voltage ratio, it is desirable to have a thickness of 21 or more, which is about the same as the thickness of the ferroelectric liquid crystal layer. Considering, 10J
IM is considered to be the upper limit.

次に、本発明の液晶ライトバルブをインコヒーレント・
コヒーレント変換器として応用する場合の例を説明する
. 第6図は、本発明の液晶ライトバルブを用いた可干渉光
相関システムの概念図である.測定対象物I9からの反
射光は、レンズ20により本発明に関わる液晶ライトバ
ルブ21上に結像される。ここで、本発明に関わる液晶
光学素子は、非線形光学結晶を用いたものに較べて大面
積であるため、測定対象物が大きくても対応でき、また
、TN,DSM等のモードの液晶を用いたものに較べて
応答速度が連いため、リアルタイムに近い高速処理が可
能である.液晶ライトバルプ21に生じた像には、偏光
ビームスプリンター22により直線偏光に分けられ、そ
の偏光軸方向が全消去時の強誘電性液晶分子のダイレク
タ方向に合ったコヒーレント光23が照射される.照射
光は、書込みによってダイレクタの反転が起こった部分
でのみ、複屈折による偏光状態の変換を受けて反射され
る.前記反射光は、再びビームスブリソター22を通り
、複屈折による偏光状態の変換を受けた部分の強度が必
然的に低くなって、入射光23のうち、偏光ビームスブ
リ・2ター22により液晶ライトバルブ21へ入射しな
かった戒分と合成され、レンズ24.マソチドフィルタ
25,レンズ26を通って相関座標面27上に結像させ
ることにより、光情報処理を行うものである.本応用例
においては、本発明の液晶光学素子によるインコヒーレ
ント・コヒーレント変換器を用いたことにより、大きな
物体にも用いることができ、かつ、リアルタイムに近い
高速処理が可能な可干渉光相関システムが実現される. 〔発明の効果〕 以上述べたきたように、本発明の分割された光導電層構
造を用いれば、DC欠陥がなく、均一な分子配列をとる
為にコントラストが高く、画像端面がシャープな良好な
メモリ性を有する、高速、高解像、高信頼性の光書込型
強誘電性液晶ライトバルブを実現でき、大面積で高速な
インコヒーレント・コヒーレント変換器、高速高密度高
速アクセス、書替え消去可能な光双安定メモリ等への応
用が可能である.具体的には、光プリンタの中間記録媒
体、画像表示装置、光シャソタ、画像処理装置、光情報
処理システム等への応用範囲を飛躍的に拡大することが
できる。
Next, the liquid crystal light valve of the present invention is made into an incoherent light valve.
An example of application as a coherent converter will be explained. FIG. 6 is a conceptual diagram of a coherent optical correlation system using the liquid crystal light valve of the present invention. The reflected light from the measurement object I9 is imaged by a lens 20 onto a liquid crystal light valve 21 related to the present invention. The liquid crystal optical element according to the present invention has a larger area than one using a nonlinear optical crystal, so it can be used even when measuring a large object. Because the response speed is faster than that of previous models, high-speed processing close to real time is possible. The image formed on the liquid crystal light bulb 21 is irradiated with coherent light 23 which is split into linearly polarized light by a polarizing beam splinter 22 and whose polarization axis direction matches the director direction of the ferroelectric liquid crystal molecules at the time of total erasure. The irradiated light undergoes polarization state conversion due to birefringence and is reflected only at the portion where the director is reversed due to writing. The reflected light passes through the beam sub-soter 22 again, and the intensity of the portion where the polarization state has been changed due to birefringence is inevitably lowered, so that the polarized beam sub-soter 22 converts the incident light 23 into a liquid crystal light. It is combined with the precepts that did not enter the bulb 21, and is sent to the lens 24. Optical information processing is performed by forming an image on a correlation coordinate plane 27 through a massotid filter 25 and a lens 26. In this application example, by using an incoherent-coherent converter using the liquid crystal optical element of the present invention, a coherent optical correlation system that can be used for large objects and can perform high-speed processing close to real time is created. It will be realized. [Effects of the Invention] As described above, if the divided photoconductive layer structure of the present invention is used, there will be no DC defects and a uniform molecular arrangement will result in high contrast and a good image with sharp image edges. A high-speed, high-resolution, and highly reliable optically written ferroelectric liquid crystal light valve with memory properties can be realized, and a large-area, high-speed incoherent-coherent converter, high-speed, high-density, high-speed access, and rewrite/erasable are possible. Applications such as optical bistable memory are possible. Specifically, the scope of application to intermediate recording media of optical printers, image display devices, optical shutters, image processing devices, optical information processing systems, etc. can be dramatically expanded.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明による液晶ライトバルブの構造を示す断
面図、第2図は本発明による光導電層の分割構造を示す
模式図、第3図は本発明の光書込型液晶ライトバルブの
直流バイアス電圧駆動による光照射時の電圧一光反射率
特性図、第4図は本発明の光書込型液品ライトバルブの
交流波形を重畳した直流バイアス電圧駆動による光照射
時の電圧一光反射率特性図、第5図は本発明の液晶ライ
トバルブを用いた画像書込み装置の光書込システム図、
第6図は本発明の液晶ライトバルブを用いた可干渉シス
テムの概念図である. 1,2・・・透明基板 3.4・・・透明電極 5.6・・・液晶配向層 ・+IJ誘電性液晶 ・誘電体ξラー ・光導電層 ・絶縁層 ・書込み光 ・投影光 13b・・・分割された光導電層 14b・・・絶縁層 ・・・マスク ・・・光書込型液品ライトバルブ ・・・測定対象物 26・・・レンズ ・光書込液晶ライトバルブ ・ビームスプリンタ ・コヒーレント光 ・マッチドフィルタ ・相関座標面 ・温度コントローラ ・PINフォト ・ランプ 7 ・ ・ ・ ・ 8 ・ ・ ・ ・ 9 ・ ・ ・ ・ lO・ ・ ・ ・ 11・ ・ ・ ・ l2・ ・ 13a 14a, 17・ ・ 18・ ・ l9・ ・ 20,  24, 21・ ・ 22・ ・ ・ ・ 23・ ・ ・ ・ 25・ ・ ・ ・ 27・ ・ ・ ・ 30・ ・ ・ ・ 31・ ・ ・ ・ 32・ ・ ・ ・ 33・ ・断熱ボックス 34・ ・偏光子 35・ ・検光子 36・ ・対物レンズ 37・ ・オシロスコープ 38・ ・発振器 以 上
FIG. 1 is a cross-sectional view showing the structure of a liquid crystal light valve according to the present invention, FIG. 2 is a schematic diagram showing a divided structure of a photoconductive layer according to the present invention, and FIG. Figure 4 shows the voltage vs. light reflectance characteristic diagram when light is irradiated by DC bias voltage driving. Figure 4 shows the voltage vs. light reflectance characteristic diagram when light is irradiated by DC bias voltage driving with an AC waveform superimposed on the optical writing type liquid light valve of the present invention. A reflectance characteristic diagram, FIG. 5 is an optical writing system diagram of an image writing device using the liquid crystal light valve of the present invention,
Figure 6 is a conceptual diagram of a coherent system using the liquid crystal light valve of the present invention. 1, 2...Transparent substrate 3.4...Transparent electrode 5.6...Liquid crystal alignment layer, +IJ dielectric liquid crystal, dielectric ξ layer, photoconductive layer, insulating layer, writing light, projection light 13b. ...Divided photoconductive layer 14b...Insulating layer...Mask...Optically written liquid crystal light valve...Measurement object 26...Lens, optically written liquid crystal light valve, beam splinter・Coherent light・Matched filter・Correlation coordinate plane・Temperature controller・PIN photo・Lamp 7 ・ ・ ・ ・ 8 ・ ・ ・ ・ 9 ・ ・ ・ 1O・ ・ ・ ・ 11・ ・ ・ ・ 12・ ・ 13a 14a, 17・ ・ 18・ ・ l9 ・ ・ 20, 24, 21 33. ・Insulation box 34. ・Polarizer 35. ・Analyzer 36. ・Objective lens 37. ・Oscilloscope 38. ・More than oscillator.

Claims (2)

【特許請求の範囲】[Claims] (1)レーザビーム、LED、ハロゲン光等の光による
書込み手段と、光導電層、光反射層、液晶配向層、液晶
層、電圧印加手段が形成され、該液晶層に光反射率と印
加電圧との間に双安定性を有する強誘電性液晶を用いた
光書込型液晶ライトバルブにおいて、前記光導電層は4
μm^2から400μm^2の範囲の大きさに分割され
ている事を特徴とする光書込型液晶ライトバルブ。
(1) A writing means using light such as a laser beam, an LED, or a halogen light, a photoconductive layer, a light reflection layer, a liquid crystal alignment layer, a liquid crystal layer, and a voltage application means are formed, and the light reflectance and the applied voltage are formed on the liquid crystal layer. In the optical writing type liquid crystal light valve using a ferroelectric liquid crystal having bistability between
An optical writing type liquid crystal light valve characterized by being divided into sizes ranging from μm^2 to 400 μm^2.
(2)前記光導電膜は、2μmから10μmの厚さの水
素化アモルファスシリコンであることを特徴とする請求
項1記載の光書込型液晶ライトバルブ。
(2) The optically writable liquid crystal light valve according to claim 1, wherein the photoconductive film is hydrogenated amorphous silicon having a thickness of 2 μm to 10 μm.
JP15522589A 1989-06-16 1989-06-16 Optical write type liquid crystal light valve Pending JPH0320719A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15522589A JPH0320719A (en) 1989-06-16 1989-06-16 Optical write type liquid crystal light valve

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15522589A JPH0320719A (en) 1989-06-16 1989-06-16 Optical write type liquid crystal light valve

Publications (1)

Publication Number Publication Date
JPH0320719A true JPH0320719A (en) 1991-01-29

Family

ID=15601259

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15522589A Pending JPH0320719A (en) 1989-06-16 1989-06-16 Optical write type liquid crystal light valve

Country Status (1)

Country Link
JP (1) JPH0320719A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5221980A (en) * 1990-09-10 1993-06-22 Seiko Instruments Inc. Method for driving ferroelectric liquid crystal light valve of light writing type
US7578487B2 (en) 2006-11-21 2009-08-25 Sony Corporation Music stand and article retaining apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5221980A (en) * 1990-09-10 1993-06-22 Seiko Instruments Inc. Method for driving ferroelectric liquid crystal light valve of light writing type
US7578487B2 (en) 2006-11-21 2009-08-25 Sony Corporation Music stand and article retaining apparatus

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