JPH0321927A - Optical writing type liquid crystal light valve - Google Patents
Optical writing type liquid crystal light valveInfo
- Publication number
- JPH0321927A JPH0321927A JP15803989A JP15803989A JPH0321927A JP H0321927 A JPH0321927 A JP H0321927A JP 15803989 A JP15803989 A JP 15803989A JP 15803989 A JP15803989 A JP 15803989A JP H0321927 A JPH0321927 A JP H0321927A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- light
- film
- writing
- photoconductive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 41
- 230000003287 optical effect Effects 0.000 title claims abstract description 37
- 230000004888 barrier function Effects 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000010408 film Substances 0.000 claims description 28
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 claims description 22
- 230000015654 memory Effects 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical class 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 238000002310 reflectometry Methods 0.000 abstract 3
- 230000010287 polarization Effects 0.000 description 12
- 230000001427 coherent effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000010365 information processing Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 2
- 238000012432 intermediate storage Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 102100025828 Centromere protein C Human genes 0.000 description 1
- 101000914241 Homo sapiens Centromere protein C Proteins 0.000 description 1
- 101000927579 Homo sapiens D-dopachrome decarboxylase Proteins 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 206010041662 Splinter Diseases 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007334 memory performance Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は,光プリンタの中間記憶媒体,画像表示装置.
光シャソタ.画像処理装置,光情報処理システム等に応
用される強誘電性液晶を用いた光書込型液晶ライトバル
ブに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to an intermediate storage medium for an optical printer and an image display device.
Hikari Shasota. This invention relates to an optical writing type liquid crystal light valve using ferroelectric liquid crystal that is applied to image processing devices, optical information processing systems, etc.
[発明の1既要コ
本発明は.暗時には高抵抗率,光照射時には高い導電率
を示す高感度な光導電層と.双安定メモリ性を有する強
透電性液晶を組合せた光書込型液晶ライトバルブの光導
電層の構造に関するもので光書込み側の透明電極上に,
バリア金属薄膜層その上に,水素化アモルファスシリコ
ンのi層からなる光導電層を形戒した構造をしており,
金属一半導体接合によるショットキーバリアダイオード
が形成され.暗時に逆方向電圧印加状態で非常に高い抵
抗率を示し.順方向電圧印加状態では逆方向印加状態よ
り低い抵抗率を示す。上記の構造を有する光導電膜を,
双安定メモリ性を有する強誘電性液晶と組合せることに
より,直流駆動による光書込みが可能で,またメモリ状
態の画像の消去も高速に行うことができる光書込型液晶
ライトバルブを実現した。[Part 1 of the Invention: The present invention is. A highly sensitive photoconductive layer that exhibits high resistivity in the dark and high conductivity when illuminated with light. This relates to the structure of the photoconductive layer of an optical writing type liquid crystal light valve that combines a highly transparent liquid crystal with bistable memory properties.On the transparent electrode on the optical writing side,
It has a structure in which a photoconductive layer consisting of an i-layer of hydrogenated amorphous silicon is placed on top of the barrier metal thin film layer.
A Schottky barrier diode is formed by a metal-semiconductor junction. It exhibits extremely high resistivity when reverse voltage is applied in the dark. When a forward voltage is applied, the resistivity is lower than when a reverse voltage is applied. A photoconductive film having the above structure,
By combining this with a ferroelectric liquid crystal that has bistable memory properties, we have created an optically writable liquid crystal light valve that is capable of optical writing using direct current drive and that can erase images in memory at high speed.
[従来の技術]
従来から光書込型液晶ライトバルブは,アドレノシング
法や使用する液晶の表示モード等に.様々な検討が重ね
られている。中でも.ツイストネマティフクモードや.
電圧制御複屈折モードと光導電膜を組み合わせた液晶ラ
イトバルブは.ほぼ実用レベルに近い特性を有しており
,光情報処理用インコヒーレント コヒーレント変換器
等に用いられてきている。しかしながら,これらのモー
ドでは書込み像のメモリ性は無く,書込み光を取り去る
と像は消滅してしまう。レーザー光等のビームスポット
でデジタル的に書込む場合も,書込み部分の像の保持時
間が短い為,解像度を上げる事が出来ず.高解像度の大
画面ディスプレーを得ようとすると.全く同じ箇所を高
速に何度も重ね書きする必要があり,そのための超高速
,超高精度なレーザースキャナ及び超高感度の光導電膜
の開発が不可欠となり,これを実現するのは極めて困難
な事である。コレステリックーネマティソク相転移モー
ドと光導電膜を組合せたものは,メモリ性は有するが,
書込み速度が遅く,コントラストが低いという欠点を有
していた。近年では,高速応答,メモリ性,高コントラ
スト,広視野再等,優れた特性を発見できる可能性のあ
る強誘電性液晶に着目し,強誘電性液晶と光導電膜とを
組み合わせた光書込型液晶ライトバルブが活発に研究さ
れるようになってきた。[Conventional technology] Optical writing type liquid crystal light valves have traditionally been used for adrenosing methods and the display mode of the liquid crystal used. Various studies are being carried out. Among others. Twisted nematic mode.
A liquid crystal light valve that combines a voltage-controlled birefringence mode and a photoconductive film. It has characteristics close to practical levels, and has been used in incoherent-coherent converters for optical information processing, etc. However, in these modes, there is no memorability of the written image, and the image disappears when the writing light is removed. Even when writing digitally with a beam spot such as a laser beam, the image retention time of the written part is short, so it is not possible to increase the resolution. When trying to obtain a high resolution large screen display. It is necessary to overwrite the exact same location over and over again at high speed, which requires the development of an ultra-high-speed, ultra-high-precision laser scanner and an ultra-sensitive photoconductive film, which is extremely difficult to achieve. That's a thing. A combination of cholesteric-nematic phase transition mode and photoconductive film has memory properties, but
It had the disadvantages of slow writing speed and low contrast. In recent years, we have focused on ferroelectric liquid crystals, which have the potential to discover excellent properties such as high-speed response, memory performance, high contrast, and wide field of view, and have developed an optical writing system that combines ferroelectric liquid crystals and photoconductive films. type liquid crystal light valves have been actively researched.
[発明が解決しようこする課題]
従来の光導電膜と強誘電性液晶を組合せた光書込型液晶
ライトバルプでは,暗時における光導電膜と強誘電性液
晶層の抵抗率がほぼおなし値を示し,印加された直流電
圧は.光導電膜と,強誘電液晶層に同し割合で印加され
る。このため強誘電性液晶の持っている,あるしきい値
での双安定メモリーを利用した光書込みが難しくなって
いる。さらに1従来の光導電膜においては印加される直
流電圧の極性が変わっても,抵抗率の値はほぼおなし値
を示すため,光書込みメモリーされた画像を消去する場
合.逆極性でかなり高い電圧を印加する必要があり,実
用上不利である。[Problem to be solved by the invention] In a conventional optical writing type liquid crystal light valve that combines a photoconductive film and a ferroelectric liquid crystal, the resistivity of the photoconductive film and the ferroelectric liquid crystal layer in the dark is almost the same value. , and the applied DC voltage is . It is applied at the same rate to the photoconductive film and the ferroelectric liquid crystal layer. This makes it difficult to perform optical writing using the bistable memory of ferroelectric liquid crystals at a certain threshold. Furthermore, in conventional photoconductive films, even if the polarity of the applied DC voltage changes, the resistivity value remains almost the same, so when erasing an image that has been optically written into memory. It is necessary to apply a considerably high voltage with reverse polarity, which is disadvantageous in practice.
[課題を解決するための手段]
上記問題を解決するために.本発明は.光書込み側透明
電極と光導電膜の間に.光導電膜との接合面でショソト
キーバリアを形或するような金属材料の薄膜を設けた。[Means for solving the problem] To solve the above problem. The present invention is. Between the transparent electrode on the optical writing side and the photoconductive film. A thin film of metallic material was provided to form a Shosotky barrier at the interface with the photoconductive film.
ショソトキーバリアは,暗暗時における逆方向での直流
電圧印加で.強誘電性液晶より大きな抵抗率を示し,双
安定メモリーを利用した光書込みを可能にし,また,順
方向での直流電圧印加で強誘電性液晶層より小さな抵抗
率を示し.光書込みメモリーされた画像を簡単に冫肖去
できる。The Shosotokhi barrier is created by applying a DC voltage in the opposite direction in dark and dark conditions. It exhibits a higher resistivity than a ferroelectric liquid crystal layer, enabling optical writing using bistable memory, and also exhibits a lower resistivity than a ferroelectric liquid crystal layer when DC voltage is applied in the forward direction. Images stored in optically written memory can be easily erased.
[作用]
本発明の液晶ライトバルブは,■度,ショットキーバリ
アダイオード特性を示す光導電膜に暗時のしきい値電圧
よりも十分に高い順方向直流バイアス電圧を印加して強
誘電性液晶を一方向の安定状態まで揃え,その状態をメ
モリさせる。この第1の工程を経た後.暗時にはしきい
値電圧以下であり.光照射時にはしきい値電圧以上とな
る。逆極性の直流バイアス電圧を印加しながらレーザー
光等によって光書込みを行う第2の工程によって,画像
書込みを行う。光照射を受けた領域の光導電層には光キ
ャリアが発生し,発生したキャリアは直流バイアス電圧
により電界方向にドリフトし,その結果光導電層の抵抗
が下がり.光照射を受けた領域には,しきい値電圧以上
の逆極性の電圧が印加され,自発分極の反転に伴う液晶
分子の反転が起こり,もう一方の安定状態にメモリされ
る事になる。この様にして形成された画像は,第1の工
程によって揃えられた液晶分子の配列方向(又はそれと
直角方向)に偏光軸を合わせた直線偏光の投射光の照射
及び反射層により反射光の偏光方向に対し偏光軸が直交
(又は平行)するように配置された検光子を通した投影
によりスクリーン上に読み出すことができる。[Function] The liquid crystal light valve of the present invention is manufactured by applying a forward DC bias voltage that is sufficiently higher than the threshold voltage in the dark to a photoconductive film exhibiting Schottky barrier diode characteristics. are aligned to a stable state in one direction, and that state is stored in memory. After going through this first step. In the dark, it is below the threshold voltage. At the time of light irradiation, the voltage exceeds the threshold voltage. Image writing is performed in a second step in which optical writing is performed using a laser beam or the like while applying a DC bias voltage of opposite polarity. Photocarriers are generated in the photoconductive layer in the area irradiated with light, and the generated carriers drift in the direction of the electric field due to the DC bias voltage, resulting in a decrease in the resistance of the photoconductive layer. A voltage of opposite polarity that is higher than the threshold voltage is applied to the region that has been irradiated with light, and the liquid crystal molecules are reversed due to the reversal of spontaneous polarization, and the region is memorized in the other stable state. The image formed in this way is irradiated with linearly polarized projection light whose polarization axis is aligned with the alignment direction (or perpendicular direction) of the liquid crystal molecules aligned in the first step, and the polarization of the reflected light by the reflective layer. It can be read out on a screen by projection through an analyzer arranged so that the polarization axis is perpendicular (or parallel) to the direction.
[実施例]
第1図は.本発明による液晶ライトバルブの構造を示す
断面図である。以下,図を用いて本発明の説明を行う。[Example] Figure 1 is. 1 is a cross-sectional view showing the structure of a liquid crystal light valve according to the present invention. The present invention will be explained below using figures.
レーザー光やLED,CRT等の光書込み手段(1)に
よる画像書込みが行われる側の透明基板(2a)の内側
には,透明電極(3a),バリア金属膜(13).光導
電層(4),遮光膜(5).誘電体旦ラー(6),液晶
配向膜(7a〉が形戊されており,投射光(8)によっ
て反射投影される側の透明基板(2b)の内側には対向
透明電極(3b).液晶配向膜(7b)が形戒されてい
る。これら一対の透明基板は,グラスファイバ等のスベ
ーサ剤を含む外周シール(9)によって重ね合わされ.
その間隙には強誘電性液晶(10)が封入されている。A transparent electrode (3a), a barrier metal film (13), etc. are provided on the inside of the transparent substrate (2a) on the side on which image writing is performed by an optical writing means (1) such as a laser beam, an LED, or a CRT. Photoconductive layer (4), light shielding film (5). A dielectric layer (6) and a liquid crystal alignment film (7a) are formed, and a counter transparent electrode (3b) and a liquid crystal are formed inside the transparent substrate (2b) on the side reflected and projected by the projection light (8). An alignment film (7b) is formed.These pair of transparent substrates are overlapped by a peripheral seal (9) containing a substrate such as glass fiber.
A ferroelectric liquid crystal (10) is sealed in the gap.
上記の様な液晶ライトバルプによれば,外面からの書込
み光1によって強誘電性液晶層(10〉に書込みが行わ
れ,また書込まれた光学情報は投影光により読み出し,
スクリーン(12)へ映し出される.第2図は,本発明
による光導電層のバイアス電圧に対する抵抗率の値を示
す特性図である。逆バイアス状態では,ショットキーバ
リアによる大きな抵抗率を示し,順方向バイアス状態で
は,より小さな抵抗率を示す.第3図は,このようにし
て形成された光書込型液晶ライトバルブを用い,光書込
み側を暗くし,!極間に電圧を印加した時の電圧一光反
射率特性を示したものである。逆方向バイアス状態では
,光導電層の抵抗率は,強誘電性液晶よりも大きく.印
加電圧は殆ど,光導電層に印化される.順方向バイアス
状態では.光導電層の抵抗率は,強誘電性液晶よりも小
さく,印加電圧は,殆ど液晶層に印加される。第4図は
,光書込み側から全面に光照射を行いながら電極間に電
圧を印加した時の電圧一光反射率特性を示したものであ
る。この場合光導電層は全面にわたり低抵抗状態となっ
ており,印加電圧は殆ど強誘電性液晶に印加される。従
って、本発明の光書込型液晶ライトバルブに於では、第
3図に示す順方向バイアス状態の、低い印加電圧で液晶
分子のダイレクタを全面均一に配列保持させることが、
暗時に可能となり、また 第3図の逆方向バイアス状態
に印加電圧を変化させ大きな印加電圧を与えても液晶分
子のダイレクタの配列は保持された状態を保ち反射率は
高い状態を保つ。この状態で、書き込み光を照射すると
、光の照射された部分は、第4図に示す逆方向バイアス
状態の反射率特性の反射率の低い状態に変化し,光の照
射されなかった部分は反射率の高い状態に保つことによ
って,画像情報の書込みが可能になる。実施例において
は,先ず透明基板2a,2bとして両面とも1/4ラム
ダ以下に研磨された厚さ2mmのガラス基板を用意し.
透明電極3a,3bとして500Aの厚さのITO透明
電極を形成した。光書込み側透明電極層3a上には,バ
リア金属膜13として,Ptが薄膜形成されている。p
t薄膜は.真空蒸着によって形成されるが,r¥すぎる
と光の透過率が低下するので,50オングストロームの
膜厚を選んでいる。その上に,SiH4を主体とするガ
スを放電分解して厚さ4umのイントリンシソクな水素
化アモルファスシリコン<a−s i: H) ヲ形成
し,光導電N4とした。この様にして形成した光導電層
の上にSiとGeを15層積層して光反射膜としての誘
電体藁ラー6を形成した。誘電体ミラー6及び投影側の
透明基板3b上に,一酸化珪素(Si○〉を基板の法線
方向に対して82度の角度で且つ蒸着の法線方向にセソ
トした膜厚計で2000オングストロームの厚さに斜方
蒸着して液晶配向層7a,7bを形成した。透明基板2
a,2bは.その配向層7a,7bを対向させ.直径1
.Sun+に制御され接着し,強誘電性液晶組底物は、
エステル系スメクチソクC液晶混合物に光学活性物質を
添加して強誘電性液晶MlF2物としたものである。ま
た,この実用例においては,バリア金属膜13の材料と
してptが使用されているが,Ir,Au,Pd,Rh
,Ni,Cr等の金属を使用してバリア金属膜l3を形
成した場合でも,ptを使用した時と同じ結果が得られ
ている。次に本発明の液晶ライトバルブをインコヒーレ
ント.コヒーレント変換器として応用する場合の例を説
明する。第5図は.本発明に係わる液晶光学素子を用い
た可干渉光相関システムの概念図である。According to the liquid crystal light valve as described above, writing is performed on the ferroelectric liquid crystal layer (10) by the writing light 1 from the outer surface, and the written optical information is read out by the projection light.
It is projected onto the screen (12). FIG. 2 is a characteristic diagram showing the resistivity value versus bias voltage of the photoconductive layer according to the present invention. In the reverse bias state, it exhibits a large resistivity due to the Schottky barrier, and in the forward bias state, it exhibits a smaller resistivity. Figure 3 shows that using the optical writing type liquid crystal light valve formed in this way, the optical writing side is darkened and! This shows the voltage-light reflectance characteristics when a voltage is applied between the electrodes. Under reverse bias conditions, the resistivity of the photoconductive layer is greater than that of the ferroelectric liquid crystal. Most of the applied voltage is applied to the photoconductive layer. In the forward bias state. The resistivity of the photoconductive layer is lower than that of the ferroelectric liquid crystal, and most of the applied voltage is applied to the liquid crystal layer. FIG. 4 shows the voltage-light reflectance characteristics when a voltage is applied between the electrodes while irradiating the entire surface with light from the optical writing side. In this case, the entire surface of the photoconductive layer is in a low resistance state, and most of the applied voltage is applied to the ferroelectric liquid crystal. Therefore, in the optically writable liquid crystal light valve of the present invention, it is possible to keep the directors of liquid crystal molecules aligned uniformly over the entire surface with a low applied voltage in the forward bias state shown in FIG.
This is possible in the dark, and even if a large applied voltage is applied by changing the applied voltage to the reverse bias state shown in FIG. 3, the alignment of the directors of the liquid crystal molecules is maintained and the reflectance remains high. In this state, when the writing light is irradiated, the part irradiated with the light changes to a state with low reflectance according to the reflectance characteristics in the reverse bias state shown in Figure 4, and the part not irradiated with the light reflects. By keeping the rate high, image information can be written. In the example, first, glass substrates with a thickness of 2 mm and polished to 1/4 lambda or less on both sides are prepared as the transparent substrates 2a and 2b.
ITO transparent electrodes with a thickness of 500A were formed as transparent electrodes 3a and 3b. A thin Pt film is formed as a barrier metal film 13 on the optical writing side transparent electrode layer 3a. p
t thin film. Although it is formed by vacuum evaporation, a film thickness of 50 angstroms is selected because the light transmittance decreases if the thickness is too high. On top of that, a gas mainly composed of SiH4 was decomposed by discharge to form a 4 um thick layer of intrinsically hydrogenated amorphous silicon to form photoconductive N4. On the photoconductive layer thus formed, 15 layers of Si and Ge were laminated to form a dielectric layer 6 as a light reflecting film. On the dielectric mirror 6 and the transparent substrate 3b on the projection side, silicon monoxide (Si◯) was deposited at an angle of 82 degrees to the normal direction of the substrate and in the normal direction of vapor deposition to a film thickness of 2000 angstroms. The liquid crystal alignment layers 7a and 7b were formed by oblique vapor deposition to a thickness of .Transparent substrate 2
a, 2b are. The alignment layers 7a and 7b are made to face each other. Diameter 1
.. Adhesion is controlled by Sun+, and the ferroelectric liquid crystal bottom is
A ferroelectric liquid crystal MIF2 is obtained by adding an optically active substance to an ester-based Smectisoc C liquid crystal mixture. In addition, in this practical example, pt is used as the material for the barrier metal film 13, but Ir, Au, Pd, Rh
Even when the barrier metal film l3 is formed using metals such as , Ni, Cr, etc., the same results as when using PT are obtained. Next, the liquid crystal light valve of the present invention is made incoherent. An example of application as a coherent converter will be explained. Figure 5 is. 1 is a conceptual diagram of a coherent optical correlation system using a liquid crystal optical element according to the present invention.
測定対象物19からの反射光は.レンズ20により本発
明に係わる液晶ライトバルブ2l上に結像される。ここ
で,本発明に係わる液晶光学素子は,非線形光学結晶を
用いたものに較べて大面積であるため,測定対象物が大
きくても対応でき,又,TN.DSM等のモードの液晶
を用いたものに較べて応答速度が速いため,リアルタイ
ムに近い高速処理が可能である。液晶ライトバルブ21
に生じた像には.偏光ビームスプリンター22により直
線偏光に分けられ,その偏光軸方向が全消去時の強誘電
性液晶分子のダイレク夕方向に合ったコヒーレント光2
3が照射される。照射光は,書込みによってダイレクタ
の反転が起こった部分でのみ,復屈折による偏光状態の
変換を受けて反射される。前記反射光は,再び偏光ビー
ムスブリソタ−22を通り,復屈折による偏光状態の変
換を受けた部分の強度が必然的に低くなって,入射光2
3のうち,偏光ビームスプリッター22により液晶ライ
トバルブ2lへ入射しなかった戒分と合威サレ,レンズ
24,マツチドフィルタ25,レンズ26を通って相関
座標面27上に結像させることにより.光情報処理を行
うものである。本応用例に於て,本発明の液晶光学素子
によるインコヒーレント.コヒーレント変換器を用いた
ことにより,大きな物体にも用いることができ.かつ,
リアルタイムに近い高速処理が可能な可干渉光相関シス
テムが実現される
[発明の効果]
以上述べてきた様に,本発明のショットキーバリアダイ
オード型の光導電層を用いた光書込型強誘電性液晶ライ
トバルブにおいては.直流バイアスにおいて光書込みが
実現でき,また,書込み画像の消去も低電圧で実現でき
る,大面積で高速なインコヒーレント.コヒーレント変
換器,書替え消去可能な光双安定メモリ等への応用が可
能である。具体的には.光プリンタの中間記憶媒体,画
像表示装置,光シャッター,画像処理装置,光情報処理
システム等への応用範囲を飛躍的に拡大する事ができる
。The reflected light from the measurement object 19 is . An image is formed by the lens 20 onto the liquid crystal light valve 2l according to the present invention. Here, since the liquid crystal optical element according to the present invention has a larger area than one using a nonlinear optical crystal, it can be used even if the object to be measured is large. Since the response speed is faster than that using a liquid crystal in a mode such as DSM, high-speed processing close to real time is possible. LCD light bulb 21
In the image that occurred. Coherent light 2 is split into linearly polarized light by a polarization beam splinter 22, and its polarization axis direction matches the direct direction of the ferroelectric liquid crystal molecules at the time of complete erasure.
3 is irradiated. The irradiated light undergoes polarization state conversion due to birefringence and is reflected only at the portion where the director is reversed due to writing. The reflected light passes through the polarization beam subsoter 22 again, and the intensity of the portion where the polarization state has been changed by birefringence is inevitably lowered, so that the intensity of the part where the polarization state has been changed by birefringence is reduced, and the intensity of the part where the polarization state has been changed by birefringence is reduced.
3, by using the polarizing beam splitter 22 to form an image on the correlation coordinate plane 27 through the polarization beam splitter 22, which does not enter the liquid crystal light valve 2l, and through the lens 24, mated filter 25, and lens 26. It performs optical information processing. In this application example, incoherence is achieved by the liquid crystal optical element of the present invention. By using a coherent transducer, it can be used for large objects. and,
A coherent optical correlation system capable of high-speed processing close to real time is realized [Effects of the invention] As described above, the optically written ferroelectric system using the Schottky barrier diode type photoconductive layer of the present invention is realized. Regarding liquid crystal light valves. A large-area, high-speed incoherent device that can perform optical writing under DC bias and erase the written image at low voltage. It can be applied to coherent converters, rewritable and erasable optical bistable memories, etc. in particular. The range of applications of optical printers to intermediate storage media, image display devices, optical shutters, image processing devices, optical information processing systems, etc. can be dramatically expanded.
第1図は,本発明による光書込型液晶ライトバルブの構
造示す断面図,第2図は,本発明による光導電層のバイ
アス電圧に対する抵抗率の値を示す特性図,第3図は,
本発明の光書込型液晶ライトバルブの暗時における直流
バイアス電圧駆動による電圧一光反射率特性図,第4図
は.本発明の光書込型液晶ライトバルブの光照射時の直
流バイアス電圧駆動による電圧一光反射率特性図.第5
図は,本発明の液晶ライトバルブを用いた可干渉システ
ムの概念図である。
1・・光書込み手段,’la,’lb・・透明基盤,3
a,3b・・透明電極,4・・光導電層,5・・遮光膜
.6・・誘電体ミラー,?a,7b・・液晶配向膜,8
・・投射光,9・・外周シール,10・・強誘電性液晶
,11・・反射防止膜.l2・・スクリーン,13・・
バリア金属膜。FIG. 1 is a cross-sectional view showing the structure of an optically writable liquid crystal light valve according to the present invention, FIG. 2 is a characteristic diagram showing the resistivity value with respect to bias voltage of the photoconductive layer according to the present invention, and FIG.
Figure 4 is a voltage-light reflectance characteristic diagram of the optically writable liquid crystal light valve of the present invention when driven by DC bias voltage in the dark. A voltage-light reflectance characteristic diagram of the optically writable liquid crystal light valve of the present invention driven by DC bias voltage during light irradiation. Fifth
The figure is a conceptual diagram of a coherent system using the liquid crystal light valve of the present invention. 1... Optical writing means, 'la,'lb... Transparent substrate, 3
a, 3b...transparent electrode, 4...photoconductive layer, 5...light shielding film. 6...Dielectric mirror,? a, 7b...Liquid crystal alignment film, 8
...Projection light, 9..Outer seal, 10..Ferroelectric liquid crystal, 11..Anti-reflection film. l2...Screen, 13...
Barrier metal film.
Claims (2)
る書き込み手段と、光導電層、光反射層、液晶配向層、
強誘電性液晶が、電圧印加手段の形成された一対の透明
電極基板間に挟持された構造を有し、前記強誘電性液晶
は光反射率と印加電圧との間に双安定メモリー性を有す
る光書込型液晶ライトバルブに於て、光書き込み側の透
明電極と該光導電層の間に、ショットキー障壁をつくる
バリア金属薄膜を形成したことを特徴とする光書込型液
晶ライトバルブ。(1) A writing means using light such as a laser beam, LED, or halogen light, a photoconductive layer, a light reflection layer, a liquid crystal alignment layer,
A ferroelectric liquid crystal has a structure in which a ferroelectric liquid crystal is sandwiched between a pair of transparent electrode substrates on which a voltage applying means is formed, and the ferroelectric liquid crystal has a bistable memory property between light reflectance and applied voltage. An optically writable liquid crystal light valve characterized in that a barrier metal thin film forming a Schottky barrier is formed between a transparent electrode on the optical writing side and the photoconductive layer.
i型であり、前記バリア金属薄膜材料は、Pt、Ir、
Au、Pd、Rh、Ni、Cr等の金属薄膜である事を
特徴とする請求項1記載の光書込型液晶ライトバルブ。(2) The photoconductive layer is i-type hydrogenated amorphous silicon, and the barrier metal thin film material is Pt, Ir,
2. The optically writable liquid crystal light valve according to claim 1, characterized in that it is a thin metal film of Au, Pd, Rh, Ni, Cr, or the like.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15803989A JPH0321927A (en) | 1989-06-19 | 1989-06-19 | Optical writing type liquid crystal light valve |
| EP19900111356 EP0402944A3 (en) | 1989-06-16 | 1990-06-15 | Light addressed liquid crystal light valve |
| KR1019900008966A KR910001429A (en) | 1989-06-16 | 1990-06-16 | Optical address liquid crystal light valve |
| CA 2019202 CA2019202A1 (en) | 1989-06-19 | 1990-06-18 | Light addressed liquid crystal light valve |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15803989A JPH0321927A (en) | 1989-06-19 | 1989-06-19 | Optical writing type liquid crystal light valve |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0321927A true JPH0321927A (en) | 1991-01-30 |
Family
ID=15662948
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15803989A Pending JPH0321927A (en) | 1989-06-16 | 1989-06-19 | Optical writing type liquid crystal light valve |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH0321927A (en) |
| CA (1) | CA2019202A1 (en) |
-
1989
- 1989-06-19 JP JP15803989A patent/JPH0321927A/en active Pending
-
1990
- 1990-06-18 CA CA 2019202 patent/CA2019202A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| CA2019202A1 (en) | 1990-12-19 |
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