JPH03208331A - Equipment for processing resist film - Google Patents

Equipment for processing resist film

Info

Publication number
JPH03208331A
JPH03208331A JP2003267A JP326790A JPH03208331A JP H03208331 A JPH03208331 A JP H03208331A JP 2003267 A JP2003267 A JP 2003267A JP 326790 A JP326790 A JP 326790A JP H03208331 A JPH03208331 A JP H03208331A
Authority
JP
Japan
Prior art keywords
cooling
processing
processing units
plate
units
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003267A
Other languages
Japanese (ja)
Other versions
JP2815446B2 (en
Inventor
Kimiharu Matsumura
松村 公治
Hiroyuki Sakai
宏之 境
Masaaki Murakami
政明 村上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Tokyo Electron Kyushu Ltd
Original Assignee
Tokyo Electron Ltd
Tokyo Electron Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Tokyo Electron Kyushu Ltd filed Critical Tokyo Electron Ltd
Priority to JP2003267A priority Critical patent/JP2815446B2/en
Publication of JPH03208331A publication Critical patent/JPH03208331A/en
Application granted granted Critical
Publication of JP2815446B2 publication Critical patent/JP2815446B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

PURPOSE:To make a small-sized and low-cost processing system as a whole by providing respective heating means and cooling means in respective processing units and providing a common temperature controlling means for the respective cooling means to centralize the temperature controlling devices of the processing units. CONSTITUTION:Processing units 1A-1C are a adhesion unit, a hot plate and a cooling plate respectively, and are provided with a heating means 2 and a cooling means 3 respectively. Preferably, a heat generating body 21 of a thin film resistor on which an insulating layer 22 such as a ceramics is provided is used as the hot plate in the heating means 2. The cooling means 3 is the one in which a passage 22 of a cooling medium is provided in a plate-like body 31 comprising the material of excellent thermal conductivity. The respective passages 32 in the respectively processing units 1A-1C are connected via a common external pipeline 33 with a device 6 for feeding the cooling medium, which is a common temperature controlling means, and the respective cooling means are subjected to a centralized control. Further, the respective units are set at respective desired processing temperatures, using jointly with the respective heating means 2. Thereby, the size of the equipment, its production cost and its maintenance cost can be reduced as a whole.

Description

【発明の詳細な説明】 [産業上の利用分野] この発明はレジスト膜処理装置に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a resist film processing apparatus.

[従来の技術] 半導体製造工程、特にレジスト塗布、露光、現像工程に
おいてはレジスト塗布から洗浄までの一連の工程をコー
タ、デベロッパ、ヒータ等の各種処理ユニットを備えた
処理装置で連続して行っている。
[Prior Art] In semiconductor manufacturing processes, particularly resist coating, exposure, and development processes, a series of processes from resist coating to cleaning are performed continuously using processing equipment equipped with various processing units such as coaters, developers, and heaters. There is.

このような処理装置は1例えば第3図に示すように複数
のレジスト塗布あるいはアドヒージヨン処理等の塗布ユ
ニット10、複数の加熱プレート、冷却プレートの処理
ユニット11等を配置し、更にそれらユニット間に被処
理体であるウェハを搬送するための搬送装置13を配置
したもので、各加熱ユニット及び各冷却ユニットは各加
熱手段及び/又は冷却手段を備え、レジスト塗布前のウ
ェハを所定温度に予備加熱し、塗布後のウェハを所定温
度に冷却し、あるいは洗浄後のウェハを加熱するように
構成されている。
For example, as shown in FIG. 3, such a processing apparatus has a plurality of coating units 10 for resist coating or adhesion processing, a plurality of processing units 11 for heating plates, cooling plates, etc., and further includes a coating between these units. A transport device 13 is arranged for transporting a wafer as a processing object, and each heating unit and each cooling unit are equipped with respective heating means and/or cooling means to preheat the wafer to a predetermined temperature before resist coating. , the wafer after coating is cooled to a predetermined temperature, or the wafer after cleaning is heated.

一般に加熱プレートは、ヒータ等の電熱手段を内蔵する
熱板から成り、この熱板上に直接あるいは、この熱板上
に埋め込まれたセラミックスあるいは石英のボールを介
してウェハが載置されヒータへの電流を制御することに
より、熱板の設定温度すなわちウェハの加熱温度をコン
トロールしている。
In general, a heating plate consists of a heating plate with a built-in electric heating means such as a heater, and a wafer is placed on this heating plate either directly or via a ceramic or quartz ball embedded in the heating plate, and the wafer is placed on the heating plate and connected to the heater. By controlling the current, the set temperature of the hot plate, that is, the heating temperature of the wafer is controlled.

又、冷却プレートは、熱板と同様にボールの埋め込まれ
た冷却板と冷却板を冷却するための冷媒の流路とから成
り、冷媒の供給源において冷媒の温度を所定温度に設定
することにより冷却温度をコントロールしている。
Similarly to a hot plate, a cooling plate is made up of a cooling plate with embedded balls and a refrigerant flow path for cooling the cooling plate. Controls cooling temperature.

更に、塗布ユニットでも上記のような電熱板と冷却手段
を備えたものがあり、このようなものにおいては冷媒の
供給あるいはヒータを制御することにより処理温度を厳
密にコントロールすることができるように構成されてい
る。これらは例えば特開昭61−23321号、特開昭
61−67224号に記載され周知である。
Furthermore, some coating units are equipped with an electric heating plate and cooling means as described above, and such units are configured so that the processing temperature can be strictly controlled by controlling the supply of refrigerant or the heater. has been done. These are described in, for example, JP-A-61-23321 and JP-A-61-67224 and are well known.

[発明が解決しようとする課題] ところで、このような従来のレジスト膜処理装置におい
ては、個々の処理ユニットはそれら処理の種類によって
要求される設定温度が異なるので、処理ユニット毎に各
々その温度を制御するように構成されている。この場合
、電熱器の制御は電力のコントロールのみで行えるので
、共通の制御系で行うことが可能であるが、冷却の場合
、冷媒の温度を設定する必要上各ユニット毎に所定の温
度調整手段を備えた冷媒供給源、冷媒を冷却ユニットに
供給するための配管とを設けなければならなかった。従
ってこのような冷却ユニットを組み合わせた処理装置で
は、全体として非常に大型化し、しかも、集中管理がで
きないので保守、操作等の負担も大きかった。
[Problem to be Solved by the Invention] By the way, in such a conventional resist film processing apparatus, each processing unit has a different set temperature depending on the type of processing, so it is necessary to set the temperature for each processing unit individually. configured to control. In this case, the electric heater can be controlled only by controlling the electric power, so it can be done using a common control system, but in the case of cooling, it is necessary to set the temperature of the refrigerant, so a predetermined temperature adjustment means is required for each unit. A refrigerant supply source with a refrigerant and piping for supplying the refrigerant to the cooling unit had to be provided. Therefore, in a processing device combining such cooling units, the overall size is very large, and since centralized control is not possible, the burden of maintenance, operation, etc. is large.

[発明の目的コ この発明はこのような従来の問題点を解決し、複数の処
理ユニットの温度コントロールを一括して行うレジスト
膜処理装置を提供することを目的とする。更に本発明は
このようなレジスト膜処理装置の装置全体として小型化
、製造、保守コストの低減を目的とする。
[Object of the Invention] It is an object of the present invention to solve these conventional problems and provide a resist film processing apparatus that can collectively control the temperature of a plurality of processing units. Furthermore, the present invention aims at downsizing the resist film processing apparatus as a whole and reducing manufacturing and maintenance costs.

[課題を解決するための手段] このような目的を達成する本発明のレジスト膜処理装置
は、少なくともアドヒージヨン処理、ホットプレート、
冷却プレートを備えた装置において、前記処理ユニット
は各々加熱手段と冷却手段とを有し且つ前記ユニットの
各冷却手段は共通の温度制御手段を有するものである。
[Means for Solving the Problems] The resist film processing apparatus of the present invention that achieves the above object can perform at least adhesion processing, hot plate processing,
In the apparatus equipped with a cooling plate, each of the processing units has a heating means and a cooling means, and each cooling means of the units has a common temperature control means.

[作用] 複数のレジスト膜処理ユニットの各冷却手段を共通の温
度制御手段で単一にコントロールすると共に、各加熱手
段を併用することにより各ユニットを所望の処理温度に
設定する。
[Operation] Each cooling means of a plurality of resist film processing units is controlled by a common temperature control means, and each unit is set to a desired processing temperature by using each heating means in combination.

[実施例] 以下、本発明のレジスト膜処理装置をレジスト塗布装置
に適用した実施例について図面を参照して説明する。
[Example] Hereinafter, an example in which the resist film processing apparatus of the present invention is applied to a resist coating apparatus will be described with reference to the drawings.

第1図において、処理ユニットLA、IB、ICは各々
アドヒージヨンユニット、ホットプレートおよび冷却プ
レートであり、1台のレジスト塗布装置(図示せず)内
に設置されたものであり、加熱手段2と冷却手段3とを
備える。これら処理ユニットの加熱手段2は、第2図に
示すように熱板として好ましくは薄膜抵抗発熱体21を
用いたものであり、薄膜抵抗発熱体21上にセラミック
ス等の絶縁層22を設けたものが用いられる。このよう
な熱板2は通電することにより発熱体全体21が加熱さ
れるので、熱の分布が極めて均一で熱容量の大きい拡散
板等を不要とし全体として薄くできるので冷却手段2と
組み合わせた場合、熱(冷却)応答性が良好である。し
かもその温度コントロールは薄膜抵抗発熱体21への通
電量を制御すればよいので制御が容易である。
In FIG. 1, processing units LA, IB, and IC are adhesion units, hot plates, and cooling plates, respectively, and are installed in one resist coating device (not shown), and heating means 2 and cooling means 3. As shown in FIG. 2, the heating means 2 of these processing units preferably use a thin film resistance heating element 21 as a hot plate, and an insulating layer 22 of ceramic or the like is provided on the thin film resistance heating element 21. is used. Since the entire heating element 21 of such a heating plate 2 is heated by energizing it, the heat distribution is extremely uniform, and there is no need for a diffusion plate with a large heat capacity, and the overall thickness can be reduced, so when combined with the cooling means 2, Good thermal (cooling) response. Furthermore, the temperature can be easily controlled by simply controlling the amount of current applied to the thin film resistance heating element 21.

更に熱板2は絶縁層22に3ヶ所φ4程度の凹部22a
が設けられており、この凹部にセラミックス等の絶縁性
のボール4が埋め込まれている。
Furthermore, the heating plate 2 has three recesses 22a of about φ4 in the insulating layer 22.
is provided, and an insulating ball 4 made of ceramic or the like is embedded in this recess.

被処理体であるウェハ5はこのボール4を介して熱板2
上に載置され、所定の温度に加熱あるいは冷却される。
The wafer 5, which is the object to be processed, is passed through the ball 4 to the hot plate 2.
It is placed on top and heated or cooled to a predetermined temperature.

次に冷却手段3は熱伝導性の優れた材料から成る板状体
31内に冷媒の流路32が設けられたものである。
Next, the cooling means 3 includes a plate-shaped body 31 made of a material with excellent thermal conductivity, and a coolant flow path 32 provided therein.

各処理ユニットIA〜ICの各流路32はユニット外部
の配管33を介して共通の温度制御手段である冷媒供給
装置6に連結されている。冷媒供給装置6は冷媒を一定
の流量で循環させるためのポンプと、冷媒を一定温度に
保つための温調装置とを備えたものである。
Each flow path 32 of each of the processing units IA to IC is connected to a refrigerant supply device 6, which is a common temperature control means, via a pipe 33 outside the unit. The refrigerant supply device 6 includes a pump for circulating the refrigerant at a constant flow rate and a temperature control device for maintaining the refrigerant at a constant temperature.

温調装置は、例えば各ユニットから戻った冷媒を減圧化
で気化させて低温にした後、液化するものなどで慣用の
装置を用いることができる。尚、冷媒としては、水、フ
ロリナート(商品名)等の公知の流体が用いられる。
As the temperature control device, a conventional device can be used, for example, one that vaporizes the refrigerant returned from each unit by reducing pressure to lower the temperature and then liquefies it. Note that, as the refrigerant, known fluids such as water and Fluorinert (trade name) are used.

以上のような構成において、本実施例における制御方法
について説明する。
In the above configuration, a control method in this embodiment will be explained.

処理ユニットIA、IB、ICは各々異なる設定温度、
例えば25℃、30℃、23℃で載置されたウェハを処
理するとする。この場合、冷媒供給装置6では一定温度
例えば23℃に調節された冷媒をポンプによって各処理
ユニットの冷却手段3に供給する。従って各冷却手段3
は一様に約23℃に保たれている。ここで、冷却プレー
トICについてはその設定温度が23℃であるが、他の
処理ユニットIA、IBでは冷却手段3で保持された温
度(23℃)と設定温度とのギャップがあるのでこの温
度ギャップをなくすように各処理ユニットIA、IBの
熱板2の薄膜抵抗発熱体21に通電する。通電量を各温
度ギャップに応じて異ならせることにより、各々を所望
の設定温度に設定することができる。
Processing units IA, IB, and IC each have different set temperatures,
For example, assume that wafers placed at 25°C, 30°C, and 23°C are processed. In this case, the refrigerant supply device 6 supplies refrigerant adjusted to a constant temperature, for example, 23° C., to the cooling means 3 of each processing unit using a pump. Therefore, each cooling means 3
is uniformly maintained at about 23°C. Here, the set temperature of the cooling plate IC is 23°C, but in the other processing units IA and IB, there is a gap between the temperature maintained by the cooling means 3 (23°C) and the set temperature, so this temperature gap exists. The thin film resistance heating elements 21 of the hot plates 2 of each processing unit IA and IB are energized so as to eliminate the By varying the amount of energization depending on each temperature gap, each can be set to a desired set temperature.

尚、本実施例においてはレジスト膜処理装置のユニット
として処理ユニットの場合について説明したが、本発明
は冷却手段を有するユニットであればすべて適用可能で
あり、例えば、搬送手段が冷却手段を有している時、こ
のような搬送手段にも共通の冷媒供給手段により冷媒を
供給するように構成することができる。
In this embodiment, a processing unit is used as a unit of a resist film processing apparatus, but the present invention can be applied to any unit having a cooling means. For example, if the conveying means has a cooling means, When the refrigerant is used, the refrigerant can be supplied to such a conveying means by a common refrigerant supply means.

又、本実施例においては、一つのレジスト塗布装置内の
処理ユニットについて述べたが、併設された複数のレジ
スト塗布装置の各処理ユニットについて本発明のレジス
ト膜処理装置が適用できるのはいうまでもない。
Further, in this embodiment, the processing unit in one resist coating apparatus has been described, but it goes without saying that the resist film processing apparatus of the present invention can be applied to each processing unit of a plurality of resist coating apparatuses installed together. do not have.

[発明の効果] 以上の説明からも明らかなように、本発明のレジスト膜
処理装置によれば、複数の処理ユニットの温度制御装置
を一本化したので装置全体として小型化、低コスト化を
図ることができる。更に本発明のレジスト膜処理装置に
よれば、設定温度の異なる処理装置における微細な温度
コントロールを、電熱手段と冷却手段とを組み合わせる
ことにより、極めて容易に行うことができる。
[Effects of the Invention] As is clear from the above description, according to the resist film processing apparatus of the present invention, the temperature control devices of the plurality of processing units are integrated, so that the entire apparatus can be made smaller and lower in cost. can be achieved. Further, according to the resist film processing apparatus of the present invention, fine temperature control in processing apparatuses having different set temperatures can be performed extremely easily by combining electric heating means and cooling means.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明のレジスト膜処理装置が適用されるレジ
スト塗布装置の一実施例を示す図、第2図は本発明に係
る処理ユニットの一実施例を示す図、第3図は従来のレ
ジスト塗布装置を示す図である。 第1図 1A、IB、IC・・・・・・処理ユニット2・・・・
・・・・・熱板(加熱手段)3・・・・・・・・・冷却
手段 5・・・・・・・・・基板(ウェハ)
FIG. 1 is a diagram showing an embodiment of a resist coating apparatus to which a resist film processing apparatus of the present invention is applied, FIG. 2 is a diagram showing an embodiment of a processing unit according to the present invention, and FIG. FIG. 2 is a diagram showing a resist coating device. Fig. 1 1A, IB, IC... Processing unit 2...
...Hot plate (heating means) 3 ...Cooling means 5 ...Substrate (wafer)

Claims (1)

【特許請求の範囲】[Claims]  少なくともアドヒージヨン処理、ホットプレート、冷
却プレートを備えた装置において、前記処理ユニットは
各々加熱手段と冷却手段とを有し且つ前記ユニットの各
冷却手段は共通の温度制御手段を有することを特徴とす
るレジスト膜処理装置。
A resist apparatus comprising at least an adhesion treatment, a hot plate, and a cooling plate, wherein each of the processing units has a heating means and a cooling means, and each cooling means of the units has a common temperature control means. Membrane processing equipment.
JP2003267A 1990-01-10 1990-01-10 Processing equipment Expired - Fee Related JP2815446B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003267A JP2815446B2 (en) 1990-01-10 1990-01-10 Processing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003267A JP2815446B2 (en) 1990-01-10 1990-01-10 Processing equipment

Publications (2)

Publication Number Publication Date
JPH03208331A true JPH03208331A (en) 1991-09-11
JP2815446B2 JP2815446B2 (en) 1998-10-27

Family

ID=11552685

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003267A Expired - Fee Related JP2815446B2 (en) 1990-01-10 1990-01-10 Processing equipment

Country Status (1)

Country Link
JP (1) JP2815446B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001093830A (en) * 1999-07-19 2001-04-06 Tokyo Electron Ltd Substrate processing apparatus and substrate processing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001093830A (en) * 1999-07-19 2001-04-06 Tokyo Electron Ltd Substrate processing apparatus and substrate processing method

Also Published As

Publication number Publication date
JP2815446B2 (en) 1998-10-27

Similar Documents

Publication Publication Date Title
US8343280B2 (en) Multi-zone substrate temperature control system and method of operating
JP5032269B2 (en) Temperature adjusting apparatus and temperature adjusting method for substrate to be processed, and plasma processing apparatus including the same
JP3188363B2 (en) Temperature controller using circulating coolant and temperature control method therefor
US5802856A (en) Multizone bake/chill thermal cycling module
JP2008509553A (en) Method and system for substrate temperature profile control
JP2013534716A (en) Apparatus and method for temperature control of semiconductor substrate support
CN106663648A (en) Substrate carrier using a proportional thermal fluid delivery system
TW201131690A (en) Temperature control system and temperature control method for substrate mounting table
KR20040111509A (en) Method and device for conditioning semiconductor wafers and/or hybrids
KR19980081166A (en) Temperature control system for semiconductor processing equipment
WO2005064659A1 (en) Temperature regulating method for substrate treating system and substrate treating system
KR100752408B1 (en) Thermal management system of the board
TW201933429A (en) Temperature controlling apparatus and method for forming photoresist layer
JPH03208331A (en) Equipment for processing resist film
TW202341322A (en) Temperature regulating device for semiconductor manufacturing equipment, and semiconductor manufacturing system
CN1106046C (en) Thermal processing apparatus for sheet-like workpieces
KR930003263A (en) Coating device and coating method
JP2717108B2 (en) Resist treatment method
JP2010510649A (en) Heat treatment method and heat treatment apparatus for base layer
CN101322077A (en) Local control of heat flow for more precise regulation of machine temperature
KR20020086618A (en) Method for substrate thermal management
TW200805483A (en) Processing apparatus and processing method
KR20020066358A (en) Multi-channel temperature control system for semiconductor processing facilities
WO2007139327A1 (en) Electric boiler of direct connection type
JPH1116818A (en) Baking equipment

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees