JPH0320916B2 - - Google Patents
Info
- Publication number
- JPH0320916B2 JPH0320916B2 JP18677784A JP18677784A JPH0320916B2 JP H0320916 B2 JPH0320916 B2 JP H0320916B2 JP 18677784 A JP18677784 A JP 18677784A JP 18677784 A JP18677784 A JP 18677784A JP H0320916 B2 JPH0320916 B2 JP H0320916B2
- Authority
- JP
- Japan
- Prior art keywords
- cobalt
- iron
- nickel
- oxide
- powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 35
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 22
- 239000011230 binding agent Substances 0.000 claims description 19
- 229910052742 iron Inorganic materials 0.000 claims description 17
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 16
- 239000000919 ceramic Substances 0.000 claims description 16
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 15
- 239000010941 cobalt Substances 0.000 claims description 14
- 229910017052 cobalt Inorganic materials 0.000 claims description 14
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000000843 powder Substances 0.000 claims description 14
- 239000011521 glass Substances 0.000 claims description 13
- 229910052759 nickel Inorganic materials 0.000 claims description 13
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 10
- 229910000428 cobalt oxide Inorganic materials 0.000 claims description 7
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 7
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 239000003960 organic solvent Substances 0.000 claims description 5
- 238000007639 printing Methods 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 4
- 239000011812 mixed powder Substances 0.000 claims description 4
- 238000010304 firing Methods 0.000 claims description 3
- 238000004898 kneading Methods 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims 1
- 239000004020 conductor Substances 0.000 description 31
- 239000011347 resin Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 239000001293 FEMA 3089 Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000006072 paste Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- -1 so in practice Chemical compound 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
産業上の利用分野
本発明は、IC、LSI、チツプ部品などからなる
回路の高密度実装用基板として用いることのでき
るセラミツク多層配線基板ならびにその製造方法
に関するものである。
従来例の構成とその問題点
近年、機器の小型化や多機能化の要望が年を追
つて強くなつてきているが、これらの要望に応え
るため回路部品の高密度実装が重要な技術となつ
てきている。特に、IC、LSIやチツプ部品の発達
に伴い回路の小型化は急速に進展しつつある。部
品の高密度実装化には限られた面積のなかにでき
るだけ多くの部品を搭載する必要があり、そのた
めには部品を小型化するとともに部品を搭載する
基板の有効面積を大きくすることである。部品の
有効搭載面積を大きくするには基板に形成される
配線の密度を高くする必要がある。近年、前述し
たようにIC、LSI、チツプ部品にみられるように
小型部品の進歩は大きい。一方、配線密度を高く
する方法としては、配線を十分にフアインライン
にするか配線を多層構造にするかの方法がある。
配線をフアインライン化するには印刷またはエツ
チング技術を高度な方法で行う必要があるが、そ
れにしてもその程度には限度がある。配線密度を
高くするのに最も効果的なのは配線を多層化する
ことである。
従来、多層構造を有する部品搭載用の基板とし
ては有機樹脂をベースとするものとセラミツクを
ベースにするものとに代表される。これらのうち
樹脂ベースのものは
第1図に示すように基板内部の導体層間の導
体接続は、基板表裏に貫通孔を設け、この貫通
孔の内壁にメツキを施すことによつて行つてお
り内部導体層間の接続箇所が多いとき、貫通孔
の数も多くなり部品実装の有効搭載面積が小さ
くなる。
部品の搭載密度が高くなるにつれて、部品自
体から発熱するような場合、樹脂の熱伝導度が
小さいため熱の放散性が悪い。
部品が例えばシリコンの半導体チツプであり
これを基板に直付けしようとしたときシリコン
と有機樹脂の熱膨張係数の差が大きすぎるため
信頼性面から樹脂基板への半導体チツプ直付け
はむずかしい。
などの問題点があり、樹脂基板では高度の実装密
度化に対しては対応しきれない。
一方、セラミツクによる多層基板構成では第2
図に示すように層間の導体接続(ビア)が基板内
部に形成できることやセラミツクの熱伝導度が樹
脂に比べて格段に高いため熱の放散性にすぐれて
いること、さらには熱膨張係数が小さくシリコン
の熱膨張係数に近いためチツプの直付が可能であ
るなどの利点があり高密度実装用基板として極め
てすぐれた性質を有している。従来セラミツクに
よる多層基板には大きく分けて2つの構成があ
る。そのひとつは焼結セラミツク基板(例えばア
ルミナ基板)上に金または銀−パラジウム系の導
体ペーストとガラス絶縁ペーストを交互に印刷、
焼成を繰り返し多層化する方法である。
この方法では、ビアが基板内部に形成でき部品
搭載の有効面積が広くなり高密度実装用基板に適
している。しかし、この構成では導体材料に金ま
たは銀−パラジウムのような貴金属を用いてお
り、そのため高価なものとなつている。その結
果、この構成によるセラミツク多層基板は産業用
機器などその使用は極限られた分野にとどまり、
民生用機器などへの応用の例がないのが実状であ
る。
また、セラミツクを用いた多層基板のもうひと
つの例はアルミナを主成分とする無機粉末と有機
結合剤とからなるグリーンシート上にタングステ
ンまたはモリブデンの導体ペーストを印刷し、乾
燥後これらの複数枚を加熱、圧着により積層化
し、さらにこれを還元雰囲気中、1500〜1600℃の
高温で焼結する方法である。この方法は、未焼結
の状態で積層、多層化するため多層化が極めて容
易である。また、アルミナ、タングステン、モリ
ブデンから構成されるため極めてすぐれた安定性
を示し、またその材料コストも小さいという利点
がある。しかし、この構成をとるためには極めて
高温を必要とするため設備が大がかりになること
や、またタングステンやモリブデンには直接半田
付できないため実際にはタングステン、モリブデ
ン導体層表面にニツケル、金のメツキを施す必要
があるなどの問題がある。
前述したように近年は部品が年々小型化され、
これらの小型部品は産業用のみならず民生用機器
にも多用されているのが現状である。一方、産業
用のみならず民生用機器の分野においても機器は
多機能化、小型化の方向にあり、部品実装用基板
においてもその必要性から基板の多層化が望まれ
ている。しかし、現在の多層基板技術には上記し
たような問題点があり広く使用されるに至つてい
ない。
発明の目的
本発明の目的は、上記欠点に鑑み低コストでか
つ部品の高密度実装を可能とするセラミツク多層
基板の製造方法を提供することである。
発明の構成
上記目的を達成するために本発明のセラミツク
多層基板は、アルミナを主成分とする焼結基板上
に酸化鉄、酸化ニツケル、酸化コバルトまたはこ
れらの混合粉を有機バインダと有機溶剤とからな
るビークルとともに混練したペーストと鉄、ニツ
ケル、コバルトまたはこれらの合金を酸化せず、
かつ鉄、ニツケル、コバルトの融点より低い温度
で焼結するガラス粉またはガラス粉とアルミナ粉
とからなる粉体を有機バインダと有機溶剤とから
なるビークルとともに混練したペーストを交互に
印刷、乾燥を繰り返す工程と、その工程で得られ
た基板を絶縁層が焼結し始めない温度で空気中で
熱処理し有機バインダを燃焼させる工程と、その
工程で得られた基板を還元雰囲気中で熱処理し酸
化鉄、酸化ニツケル、酸化コバルトまたはこれら
の混合粉を金属に還元する工程と、その工程で得
られた基板を鉄、ニツケル、コバルトの融点より
低い温度で焼成し、ガラスまたはガラスとアルミ
ナの混合相と金属を緻密化する工程とからなる製
造工程としたもので、これにより極めて低コスト
の鉄、ニツケルまたはコバルトを使用したセラミ
ツク多層板を製造することを可能とするものであ
る。
実施例の説明
以下に本発明の各工程を詳細に説明する。
本発明では、鉄、ニツケル、コバルトのそれぞ
れの導体の出発原料として酸化鉄、酸化ニツケ
ル、酸化コバルトを用い、また絶縁材料としては
鉄、ニツケル、コバルトの融点以下で焼結し、か
つ鉄、ニツケルまたはコバルトを酸化しないガラ
スまたはガラスとアルミナの混合物を用いる。酸
化鉄としてはFe2O3(ベンガラ)が最も代表的で
あり、ニツケルではNiO、コバルトではCoOが代
表的であるが、もちろん他の価数の酸化物であつ
ても構わない。絶縁材料としては、例えばBaO、
B2O3、CaO、MgO、Al2O3、SiO2などの成分か
ら構成されるガラスがある。これらのような成分
は熱力学的に十分安定なものであり、鉄やニツケ
ル、コバルトのそれぞれの金属を酸化させる事は
ない。このような成分からなる導体粉と絶縁材料
粉を有機バインダと有機溶剤とからなるビークル
とを混練しペースト化する。このペーストをアル
ミナ焼結基板上に導体ペーストを所定のパターン
状にスクリーン印刷したのち乾燥し、更にこの上
に絶縁ペーストを印刷、乾燥する。必要に応じ
て、この工程を繰り返し積層化する。次にこれを
600℃〜800℃、空気中で熱処理する。この工程
は、ペースト中にある有機バインダを完全に散逸
させる工程である。有機バインダは、普通には炭
素と水素から構成される高分子であり、これを中
性雰囲気中または還元雰囲気中で熱処理した場
合、最後に炭素が残り完全に散逸させる事は困難
である。有機バインダを含む未焼成セラミツクを
酸素を含まない系で焼結させる場合、有機バイン
ダを完全散逸させる事が焼結技術上最も問題とな
る事が多い。一方、本発明では有機バインダを含
むペーストを印刷、積層化したものを空気中で熱
処理するため雰囲気には十分多量の酸素が存在す
る。そのため、有機バインダが分散し、最後に炭
素が残つてもまわりの雰囲気の酸素により燃焼さ
れCOまたはCO2というガスとなつて完全に有機
バインダは完全に外部に散逸する。この空気中熱
処理の工程では導体の酸化鉄、酸化ニツケルまた
は酸化コバルトと絶縁層が交互に積層化され互い
に接触しているが、まだ十分に高温でないためこ
れらの導体酸化物と絶縁層との間には極小量の相
互拡散しか生じない。この温度領域で完全に相互
拡散が生じるような場合は構成上都合が悪く、し
たがつて絶縁層の材料としては導体酸化物と相互
拡散しにくい系を選ぶ必要がある。このように完
全に有機バインダを消逸させたのち、これを還元
雰囲気中700〜900℃で熱処理する。
この工程のポイントは、導体材料酸化物の部分
を金属に還元するところにある。この工程では還
元性気体が十分に積層部内部に拡散する必要があ
るため、積層部の緻密化を起さないようにする事
が重要である。また、当然の事ながら絶縁層成分
中に還元され易い成分が含まれる事は好ましくな
く、このような成分が含まれると絶縁層の絶縁不
良や一度還元された導体部を再び酸化してしまう
という現象につながる。還元雰囲気としては水素
または水素とちつ素の混合気体が一般的である。
次に、還元された金属が酸化されない程度の還
元雰囲気を保ち、温度をあげ金属層と絶縁層を焼
結させ緻密化させる。緻密化される過程で金属と
絶縁層の密着性が確保され絶縁層と金属が積層化
され、多層一体構造のものが得られる。
以下に本発明の具体的な実施例についてのべ
る。
実施例
酸化鉄(α−Fe2O3)粉末とテレピン油に10w
%のエチルセルロースを溶かしたビークルを三段
ロールで混練し、導体ペーストとした。また、コ
ーニング社製ガラス#7070の粉末と昭和電工製ア
ルミナ(AL−30)、50/50の重量比からなる粉末
と上記ビークルを混練し絶縁ペーストとした。焼
結96%アルミナ基板上に上記の導体ペーストを所
定のパターンに印刷し乾燥した。さらにこの上に
上記絶縁ペーストを印刷し、乾燥した。この絶縁
層の所定箇所にはこの上に形成する導体層と下部
導体層を接続する目的で小孔(ビア)が設けられ
ている。上記絶縁層の上にさらに所定のパターン
で導体層を印刷し、乾燥した。この積層体を空気
中、700℃で30分間熱処理した。更にこの積層体
を850℃、10%H2・90%N2混合気体中で30分間
熱処理した。次にこれを1%H2−99%N2混合気
体雰囲気中で1200℃、1時間熱処理した。このよ
うにして得た積層体は一体構造となつており、ま
た鉄は完全な金属層となつており最上層鉄層と下
部鉄層との電気的導通も得られた。以下には、こ
のようにして得た積層体の代表的特性を示す。
INDUSTRIAL APPLICATION FIELD The present invention relates to a ceramic multilayer wiring board that can be used as a board for high-density mounting of circuits including ICs, LSIs, chip components, etc., and a method for manufacturing the same. Conventional configurations and their problems In recent years, demands for smaller devices and multifunctionality have become stronger year by year, and in order to meet these demands, high-density mounting of circuit components has become an important technology. It's coming. In particular, the miniaturization of circuits is progressing rapidly with the development of ICs, LSIs, and chip components. To achieve high-density mounting of components, it is necessary to mount as many components as possible within a limited area, and to achieve this, it is necessary to reduce the size of the components and increase the effective area of the board on which the components are mounted. In order to increase the effective mounting area of components, it is necessary to increase the density of wiring formed on the board. In recent years, as mentioned above, there has been great progress in small parts, as seen in ICs, LSIs, and chip parts. On the other hand, methods for increasing the wiring density include making the wiring sufficiently fine-lined or making the wiring a multilayer structure.
Fine-line wiring requires advanced printing or etching techniques, but even then there are limits to the extent to which they can be achieved. The most effective way to increase wiring density is to use multiple layers of wiring. Conventionally, substrates for mounting components having a multilayer structure include those based on organic resin and those based on ceramic. Among these, resin-based ones, as shown in Figure 1, conductor connections between the conductor layers inside the board are made by providing through holes on the front and back of the board and plating the inner walls of these through holes. When there are many connection points between conductor layers, the number of through holes also increases, and the effective mounting area for component mounting becomes smaller. As the mounting density of components increases, if heat is generated from the components themselves, the thermal conductivity of the resin is low, resulting in poor heat dissipation. When the component is, for example, a silicon semiconductor chip and it is attempted to be directly attached to a substrate, the difference in thermal expansion coefficients between silicon and organic resin is too large, making it difficult to attach the semiconductor chip directly to the resin substrate from the viewpoint of reliability. Due to these problems, resin substrates cannot cope with high packaging density. On the other hand, in a multilayer board configuration using ceramics, the second
As shown in the figure, conductor connections (vias) between layers can be formed inside the board, ceramic has a much higher thermal conductivity than resin, so it has excellent heat dissipation, and it has a small coefficient of thermal expansion. Since it has a thermal expansion coefficient close to that of silicon, it has the advantage of allowing direct attachment of chips, and has extremely excellent properties as a substrate for high-density packaging. Conventional ceramic multilayer substrates can be roughly divided into two configurations. One method is to alternately print gold or silver-palladium conductor paste and glass insulation paste on a sintered ceramic substrate (e.g. alumina substrate).
This is a method of repeating firing to create multiple layers. With this method, vias can be formed inside the board, increasing the effective area for mounting components, making it suitable for high-density mounting boards. However, this configuration uses a noble metal such as gold or silver-palladium as the conductor material, making it expensive. As a result, the use of ceramic multilayer substrates with this configuration is limited to extremely limited fields such as industrial equipment.
The reality is that there are no examples of its application to consumer devices. Another example of a multilayer board using ceramic is to print tungsten or molybdenum conductive paste on a green sheet made of inorganic powder mainly composed of alumina and an organic binder, and then print these sheets after drying. This is a method in which the layers are laminated by heating and pressure bonding, and then sintered at a high temperature of 1500 to 1600°C in a reducing atmosphere. In this method, since the materials are laminated and multilayered in an unsintered state, multilayering is extremely easy. Furthermore, since it is composed of alumina, tungsten, and molybdenum, it exhibits extremely high stability and has the advantage of low material cost. However, this configuration requires extremely high temperatures, which requires large-scale equipment, and it is not possible to solder directly to tungsten or molybdenum, so in practice, nickel or gold plating is applied to the surface of the tungsten or molybdenum conductor layer. There are problems such as the need to perform As mentioned above, in recent years, parts have become smaller year by year,
Currently, these small components are widely used not only in industrial equipment but also in consumer equipment. On the other hand, not only in the field of industrial use but also in the field of consumer equipment, devices are becoming more multi-functional and smaller, and multi-layered boards are desired for component mounting boards as well. However, the current multilayer board technology has the above-mentioned problems and has not been widely used. OBJECTS OF THE INVENTION In view of the above-mentioned drawbacks, an object of the present invention is to provide a method for manufacturing a ceramic multilayer board that is low cost and enables high-density mounting of components. Structure of the Invention In order to achieve the above object, the ceramic multilayer substrate of the present invention is produced by applying iron oxide, nickel oxide, cobalt oxide, or a mixed powder thereof to a sintered substrate mainly composed of alumina using an organic binder and an organic solvent. It does not oxidize the paste and iron, nickel, cobalt, or their alloys, which are mixed together with the vehicle.
A paste made by kneading glass powder or powder consisting of glass powder and alumina powder, which is sintered at a temperature lower than the melting point of iron, nickel, and cobalt, with a vehicle consisting of an organic binder and an organic solvent is alternately printed and dried repeatedly. A process in which the substrate obtained in that process is heat-treated in air at a temperature that does not cause the insulating layer to start sintering to burn off the organic binder, and a process in which the substrate obtained in that process is heat-treated in a reducing atmosphere to form iron oxide. , a process of reducing nickel oxide, cobalt oxide, or a mixed powder of these to metal, and firing the substrate obtained in this process at a temperature lower than the melting point of iron, nickel, or cobalt to form a glass or a mixed phase of glass and alumina. This manufacturing process consists of a step of densifying the metal, and this makes it possible to manufacture extremely low-cost ceramic multilayer plates using iron, nickel, or cobalt. Description of Examples Each step of the present invention will be described in detail below. In the present invention, iron oxide, nickel oxide, and cobalt oxide are used as the starting materials for conductors of iron, nickel, and cobalt, and the insulating material is sintered at a temperature below the melting point of iron, nickel, and cobalt. Or use glass or a mixture of glass and alumina that does not oxidize cobalt. The most typical iron oxide is Fe 2 O 3 (red iron), NiO for nickel, and CoO for cobalt, but of course oxides with other valences may be used. Examples of insulating materials include BaO,
There are glasses composed of components such as B 2 O 3 , CaO, MgO, Al 2 O 3 , and SiO 2 . These components are thermodynamically stable enough to not oxidize the metals iron, nickel, and cobalt. Conductive powder and insulating material powder made of such components are kneaded with a vehicle made of an organic binder and an organic solvent to form a paste. This paste is screen printed on a sintered alumina substrate in a predetermined pattern, and then dried, and then an insulating paste is printed on top of this and dried. If necessary, this process is repeated to form layers. then this
Heat treated in air at 600℃~800℃. This step is a step to completely dissipate the organic binder in the paste. An organic binder is usually a polymer composed of carbon and hydrogen, and when it is heat-treated in a neutral atmosphere or a reducing atmosphere, carbon remains at the end and is difficult to completely dissipate. When a green ceramic containing an organic binder is sintered in an oxygen-free system, the most important problem in sintering technology is often to completely dissipate the organic binder. On the other hand, in the present invention, a printed and laminated paste containing an organic binder is heat-treated in air, so a sufficiently large amount of oxygen exists in the atmosphere. Therefore, the organic binder is dispersed, and even if carbon remains at the end, it is burned by the oxygen in the surrounding atmosphere and becomes a gas called CO or CO 2 , and the organic binder is completely dissipated to the outside. In this in-air heat treatment process, the conductor iron oxide, nickel oxide, or cobalt oxide and the insulating layer are layered alternately and are in contact with each other, but the temperature is not yet high enough, so the gap between these conductor oxides and the insulating layer is Only a minimal amount of interdiffusion occurs. If interdiffusion occurs completely in this temperature range, it would be inconvenient from a structural standpoint, and therefore it is necessary to select a material for the insulating layer that is difficult to interdiffuse with the conductor oxide. After completely dissipating the organic binder in this manner, it is heat treated at 700 to 900°C in a reducing atmosphere. The key point of this process is to reduce the oxide portion of the conductive material to metal. In this step, it is necessary for the reducing gas to sufficiently diffuse into the laminated portion, so it is important to prevent the laminated portion from becoming dense. In addition, it is of course undesirable for the insulating layer components to contain components that are easily reduced, and if such components are included, they may cause poor insulation of the insulating layer or re-oxidize the conductor parts that have been reduced. lead to phenomena. The reducing atmosphere is generally hydrogen or a mixed gas of hydrogen and nitrogen. Next, while maintaining a reducing atmosphere to the extent that the reduced metal is not oxidized, the temperature is raised to sinter and densify the metal layer and the insulating layer. During the densification process, the adhesion between the metal and the insulating layer is ensured, and the insulating layer and metal are laminated to obtain a multilayer integrated structure. Specific examples of the present invention will be described below. Example: 10w of iron oxide (α-Fe 2 O 3 ) powder and turpentine oil
% of ethylcellulose was kneaded with a three-stage roll to form a conductive paste. Further, the above vehicle was kneaded with powder of glass #7070 manufactured by Corning Co., Ltd. and alumina (AL-30) manufactured by Showa Denko Corporation in a weight ratio of 50/50 to form an insulating paste. The above conductive paste was printed in a predetermined pattern on a sintered 96% alumina substrate and dried. Furthermore, the above insulation paste was printed on this and dried. Small holes (vias) are provided at predetermined locations on this insulating layer for the purpose of connecting the conductor layer formed thereon and the lower conductor layer. A conductor layer was further printed in a predetermined pattern on the insulating layer and dried. This laminate was heat treated in air at 700°C for 30 minutes. Further, this laminate was heat-treated at 850° C. in a mixed gas of 10% H 2 and 90% N 2 for 30 minutes. Next, this was heat treated at 1200° C. for 1 hour in a 1% H 2 -99% N 2 mixed gas atmosphere. The thus obtained laminate had a monolithic structure, and the iron was a complete metal layer, and electrical continuity was obtained between the uppermost iron layer and the lower iron layer. Typical characteristics of the laminate thus obtained are shown below.
【表】
ニツケル導体またはコバルト導体の多層基板も
導体材料原料として酸化ニツケル(NiO)、酸化
コバルト(CoO)の粉末を用い、ビークルと混練
し導体ペーストとした。これを鉄の場合と同じ絶
縁ペーストを用い、同じ手順、条件で印刷、乾
燥、空気中熱焼理、還元雰囲気中熱処理、高温熱
処理をし積層体を作成した。これらのものも鉄の
場合同様、金属層と絶縁層は一体構造となつてお
り、また最上層導体層と下部導体層間の電気的導
通が得られた。
この2者の性質はほぼ同じ程度であり、絶縁層
抵抗は>1012Ω、導体抵抗は7〜9mΩ/ロ、接
着強度は0.8〜1.1Kg/mm2であつた。
なお上の実施例では層数は導体2層としたが、
この層数は2層に限定されるものでなく印刷、乾
燥を繰り返えすことによつて更に多くの層数とす
ることができる。
発明の効果
以上の説明から明らかなように、本発明はアル
ミナ焼結基板の上に金属酸化物導体材料ペースト
と絶縁ペーストを交互に印刷、乾燥し、脱バイン
ダ空気中熱処理工程、金属酸化物還元熱処理、金
属、絶縁層焼結緻密化工程からなるように構成さ
れており次のような効果が得られる。
(1) 導体材料は鉄、ニツケル、コバルトのような
卑金属を用いているため極めて低コストの多層
基板が得られる。
(2) 導体材料は印刷時、金属の酸化物を用いるた
め、脱バインダは空気中で行う事が可能となる
ため容易にかつ完全にバインダの除去ができ金
属層、絶縁層の焼結状態に好結果を与える。
(3) 焼結の条件は完全な還元雰囲気で行うため、
微妙な雰囲気制御を必要とせず条件設定が容易
などの優れた効果が得られる。
その効果により、多層基板が低コストで、かつ
容易に製造ができるため低コスト、高密度実装回
路モジユールを提供し機器の小型、多機能化の拡
大に貢献するところ大である。[Table] Multilayer substrates with nickel or cobalt conductors also use nickel oxide (NiO) and cobalt oxide (CoO) powders as conductor material raw materials and are kneaded with a vehicle to form a conductor paste. This was printed, dried, baked in air, heat treated in a reducing atmosphere, and heat treated at high temperature using the same insulating paste as for iron and the same procedures and conditions to create a laminate. In these cases, as in the case of iron, the metal layer and the insulating layer had an integral structure, and electrical continuity was obtained between the uppermost conductor layer and the lower conductor layer. The properties of these two materials were approximately the same, with an insulating layer resistance of >10 12 Ω, a conductor resistance of 7 to 9 mΩ/2, and an adhesive strength of 0.8 to 1.1 Kg/mm 2 . In the above example, the number of layers was two conductor layers, but
The number of layers is not limited to two, but can be increased by repeating printing and drying. Effects of the Invention As is clear from the above description, the present invention involves alternately printing and drying a metal oxide conductive material paste and an insulating paste on an alumina sintered substrate, performing a binder removal heat treatment process in the air, and reducing the metal oxide. It consists of heat treatment, metal, and insulating layer sintering and densification processes, and the following effects can be obtained. (1) Since base metals such as iron, nickel, and cobalt are used as conductor materials, an extremely low-cost multilayer board can be obtained. (2) Since metal oxide is used for the conductor material during printing, the binder can be removed in the air, making it easy and complete to remove the binder and leaving the metal layer and insulating layer in a sintered state. Gives good results. (3) Sintering is performed in a completely reducing atmosphere, so
Excellent effects such as easy condition setting without the need for delicate atmosphere control can be obtained. As a result, multilayer boards can be manufactured at low cost and easily, providing low-cost, high-density mounting circuit modules, greatly contributing to the expansion of equipment miniaturization and multifunctionality.
第1図は樹脂多層基板の断面図、第2図はセラ
ミツク多層配線基板の断面図である。
1……表面導体、2……スルホール内壁導体、
3……内部導体、4……樹脂絶縁体、5……表面
導体、6……内部導体、7……セラミツク絶縁
体。
FIG. 1 is a sectional view of a resin multilayer board, and FIG. 2 is a sectional view of a ceramic multilayer wiring board. 1...Surface conductor, 2...Through-hole inner wall conductor,
3...Inner conductor, 4...Resin insulator, 5...Surface conductor, 6...Inner conductor, 7...Ceramic insulator.
Claims (1)
鉄、酸化ニツケル、酸化コバルまたはこれらの混
合粉を有機バインダと有機溶剤とからなるビーク
ルとともに混練したペーストと鉄、ニツケル、コ
バルトまたはこれらの合金を酸化せず、かつ鉄、
ニツケル、コバルトの融点より低い温度で焼結す
るガラス粉またはガラス粉とアルミナ粉とからな
る粉体を有機バインダと有機溶剤とからなるビー
クルとともに混練したペーストを交互に印刷乾燥
を繰り返えす工程と、その工程で得られた基板を
絶縁層が焼結し始めない温度で空気中で熱処理し
有機バインダを燃焼させる工程と、その工程で得
られた基板を還元雰囲気中で熱処理し、酸化鉄、
酸化ニツケル、酸化コバルトまたはこれらの混合
粉を金属に還元する工程と、その工程で得られた
基板を鉄、ニツケル、コバルトの融点より低い温
度で焼成し、ガラスまたはガラスとアルミナの混
合相と金属を緻密化する工程とからなるセラミツ
ク多層配線基板の製造方法。1 A paste prepared by kneading iron oxide, nickel oxide, cobalt oxide, or a mixed powder of these together with a vehicle consisting of an organic binder and an organic solvent, and iron, nickel, cobalt, or an alloy of these are placed on a sintered substrate mainly composed of alumina. without oxidizing, and iron,
A process of alternately printing and drying a paste made by kneading glass powder or powder consisting of glass powder and alumina powder, which is sintered at a temperature lower than the melting point of nickel or cobalt, with a vehicle consisting of an organic binder and an organic solvent. , a step in which the substrate obtained in that step is heat-treated in air at a temperature at which the insulating layer does not begin to sinter to burn off the organic binder, and a step in which the substrate obtained in that step is heat-treated in a reducing atmosphere to remove iron oxide,
A process of reducing nickel oxide, cobalt oxide, or a mixed powder thereof to metal, and firing the substrate obtained in this process at a temperature lower than the melting point of iron, nickel, or cobalt to form glass or a mixed phase of glass and alumina and metal. A method for manufacturing a ceramic multilayer wiring board, which comprises a step of densifying a ceramic multilayer wiring board.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59186777A JPS6164194A (en) | 1984-09-06 | 1984-09-06 | Manufacturing method of ceramic multilayer wiring board |
| US06/756,081 US4714570A (en) | 1984-07-17 | 1985-07-17 | Conductor paste and method of manufacturing a multilayered ceramic body using the paste |
| US07/066,182 US4863683A (en) | 1984-07-17 | 1987-06-24 | Conductor paste and method of manufacturing a multilayered ceramic body using the paste |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59186777A JPS6164194A (en) | 1984-09-06 | 1984-09-06 | Manufacturing method of ceramic multilayer wiring board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6164194A JPS6164194A (en) | 1986-04-02 |
| JPH0320916B2 true JPH0320916B2 (en) | 1991-03-20 |
Family
ID=16194425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59186777A Granted JPS6164194A (en) | 1984-07-17 | 1984-09-06 | Manufacturing method of ceramic multilayer wiring board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6164194A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7841346B2 (en) * | 2022-05-19 | 2026-04-07 | 新光電気工業株式会社 | Ceramic substrate and method for manufacturing the same, electrostatic chuck, substrate fixing device, package for semiconductor device |
-
1984
- 1984-09-06 JP JP59186777A patent/JPS6164194A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6164194A (en) | 1986-04-02 |
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