JPH03211837A - Semiconductor device - Google Patents

Abstract

PURPOSE:To prevent the short-circuiting caused by dust and the like during measurement, enable the inspection of failures caused by passivation, and reduce the operating speed difference between a semiconductor device and a circuit, by installing a through hole connecting an electrode for inspection use on a pasivation film and a wiring. CONSTITUTION:A silicon oxide film 102 is formed as an layer insulating film on a silicon substrate 101, and a wiring 103 is formed on the film 102 by using aluminum. After a silicon nitride film is formed as a passivation film 104 on the whole surface, a through hole 106 is formed on the wiring, and an electrode 105 for inspection use is formed in the upper part of the through hole 106 by using aluminum. Thereby the failures caused by dust which has fallen down during measurement because said measurement is performed after the passivation film is formed, and the short caused by hillock of aluminum after sintering can be prevented, and further the inspection of failures owing to stress caused by passivation is enabled. In addition, since the capacitance between the wiring 103 and the silicon substrate 101 is reduced, the operating speed difference between practical semiconductor and a circuit is reduced.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the structure of inspection electrodes in semiconductor devices.

[Prior Art] The structure of a test electrode in a conventional semiconductor device is such that an electrode having a sufficient area for setting a test needle is provided on a part of the wiring to be tested.

[Problem U and purpose to be solved by the invention] However, in the above-mentioned conventional technology, since the test electrode is on the same layer as the wiring, hillocks may occur due to the measurement being carried out on the aluminum sinter, and there is a possibility of short-circuiting. be. Also, since it is necessary to measure before applying passivation,
There is a risk that defects may occur due to adhesion of dust during measurement, and at the same time, it is impossible to analyze defects due to stress, etc. that occur after passivation is applied. Furthermore, in the conventional technology described above, the inspection electrode is on the same layer as the wiring, and the area is larger than the wiring, so the electrical capacitance between the wiring and the silicon substrate is large, resulting in a difference in operating speed of the actual semiconductor device. There is a problem that it comes out.

Therefore, the present invention not only prevents defects caused by dust falling during measurement and short circuits caused by hillocks of aluminum after sintering, but also enables inspection of defects caused by stress caused by passivation, and also makes it possible to detect defects caused by stress caused by passivation. It is an object of the present invention to provide an excellent semiconductor device with little difference in operating speed of circuits.

[Means for Solving the Problems] The wiring structure of the semiconductor device of the present invention includes an interlayer insulating film, a wiring formed above the interlayer insulation film, a passivation film formed above the wiring, It is characterized by having an inspection electrode formed above the passivation film and a through hole connecting the inspection electrode and the wiring.

[Example] A cross-sectional view of one example of the wiring structure of a semiconductor device of the present invention is shown in FIG. 1(a). 101 is a silicon substrate, 102
103 is an interlayer insulating film, 103 is a wiring, 104 is a passivation film, 105 is a test electrode, 106 is a through hole for connecting the test electrode and the wiring, and 107 is a pad.

A plan view of one embodiment of the wiring structure of a semiconductor device of the present invention is shown in FIG. 1(b). 103 is a wiring, 105 is an electrode for inspection, 106 is a through hole made in the passivation film to connect the wiring and the electrode for inspection, and 107 is a pad.

FIG. 2 shows a plan view of one embodiment of the semiconductor device of the present invention. 201 is a transistor part, 202 is a wiring, 20
3 is an electrode for inspection. If a transistor is located very close to the wiring you want to measure, as shown in Figure 2, if a testing electrode is placed on the wiring, when a testing needle is applied to the testing electrode, pressure will be applied to the transistor underneath, which will affect the transistor characteristics. Subject to change. Therefore, in such a case, such a problem can be solved by establishing a connection with the wiring through a through hole and then providing a test electrode in a place where there is no transistor, as shown in FIG.

A plan view of one embodiment of the semiconductor device of the present invention is shown in FIG. 301 is a wiring, and 302 is an electrode for inspection. Third
When you want to measure one of several parallel wires as shown in the figure, placing a test electrode directly above the wire you want to measure will reduce stress on the wire below when the test needle is applied. This may cause damage to the wiring. Therefore, in such a case, such a problem can be solved by establishing a connection with the wiring through a through hole as shown in FIG. 3, and then providing a testing electrode in a place where there is no wiring underneath.

Details will be explained below as we follow the process.

First, a silicon substrate 101 with junctions etc. formed thereon.
A silicon oxide film 102 with a thickness of approximately 400 mm is formed thereon as an interlayer insulating film.
After that, a wiring 103 made of aluminum with a thickness of about 5,000 is formed above it, and then a silicon nitride film with a thickness of about 1 μm is formed as a passivation film on the entire surface by CVD method, and a through hole is opened on the wiring. A test electrode is formed above the through hole using aluminum having a thickness of 1 μm.

Although the present invention has been described above based on Examples, it goes without saying that the present invention is not limited to the above-mentioned Examples and can be modified in various ways without departing from the spirit thereof. For example, the wiring structure is not limited to the aluminum-N wiring of the embodiment, but may have a structure of two or more layers. In addition, although silicon oxide is used for the interlayer insulating film, aluminum is used for the wiring, and silicon nitride is used for the passivation film, it goes without saying that various changes can be made without departing from the spirit of the invention.

[Effects of the Invention] As described above, according to the structure of the inspection electrode for a semiconductor device of the present invention, since the measurement is performed after attaching a passivation film, defects caused by dust etc. that fell during the measurement, and defects after sintering. In addition to preventing short circuits due to aluminum hillocks, it is also possible to inspect defects caused by stress caused by passivation, and because the capacitance between the wiring and the silicon substrate is reduced compared to conventional methods, it is possible to This has the effect of reducing the difference in operating speed of the circuit with the conductor.

[Brief explanation of drawings]

FIG. 1(a) is a sectional view showing an embodiment of the semiconductor device of the present invention. FIG. 1(b) is a plan view showing an embodiment of the semiconductor device of the present invention. FIG. 2 is a plan view showing an embodiment of the semiconductor device of the present invention. FIG. 3 is a plan view showing an embodiment of the semiconductor device of the present invention. 101...Silicon substrate 102...Interlayer insulating film 201...Transistor 103.202.301...Wiring 104...Badgecon film 105.203.302...Inspection electrode 106...
Through hole 107...More than pad

Claims (1)

[Claims] an interlayer insulating film, a wiring formed above the interlayer insulating film, a passivation film formed on the wiring, an inspection electrode formed on the passivation film, and an inspection electrode and the wiring. A semiconductor device characterized by having a through hole for connection.