JPH03211852A - Method for inspecting semiconductor device - Google Patents
Method for inspecting semiconductor deviceInfo
- Publication number
- JPH03211852A JPH03211852A JP745290A JP745290A JPH03211852A JP H03211852 A JPH03211852 A JP H03211852A JP 745290 A JP745290 A JP 745290A JP 745290 A JP745290 A JP 745290A JP H03211852 A JPH03211852 A JP H03211852A
- Authority
- JP
- Japan
- Prior art keywords
- light
- semiconductor substrate
- beams
- foreign matter
- beam splitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 230000001427 coherent effect Effects 0.000 claims abstract description 9
- 238000007689 inspection Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
Landscapes
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、コヒーレントな光を用いて、半導体基板上の
異物を検出する半導体装置の検査方法に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a semiconductor device inspection method that uses coherent light to detect foreign matter on a semiconductor substrate.
従来の技術
従来の半導体装置の検査方法は、半導体基板に対して、
斜め方向から単色光を照射し、その散乱光を検出するこ
とによって異物の検査を行う方法が用いられてきた。BACKGROUND OF THE INVENTION In a conventional semiconductor device inspection method, a semiconductor substrate is
A method of inspecting for foreign substances has been used by irradiating monochromatic light from an oblique direction and detecting the scattered light.
発明が解決しようとする課題
前記のような方法では、半導体基板上の異物の形状が平
坦で、エツジ部の傾斜がゆるやかであった場合、単色光
を照射しても、異物からの散乱が少ないために検出が困
難であるという問題点を有していた。Problems to be Solved by the Invention In the method described above, if the shape of the foreign object on the semiconductor substrate is flat and the slope of the edge part is gentle, even if monochromatic light is irradiated, there will be little scattering from the foreign object. Therefore, there was a problem that detection was difficult.
本発明は、上記問題に対して異物の形状にかかわらず、
半導体基板上の異物を検出することのできる半導体装置
の検査方法を提供することを目的とする。The present invention solves the above problem, regardless of the shape of the foreign object.
An object of the present invention is to provide a semiconductor device inspection method that can detect foreign matter on a semiconductor substrate.
課題を解決するための手段
この問題を解決するために、本発明の半導体装置の検査
方法は、コヒーレントな光を半導体基板表面と参照面に
２分割して照射し、半導体基板からの反射光と参照面か
らの参照光の干渉波形の違いにより、半導体基板上の異
物を検出する半導体装置の検査方法である。Means for Solving the Problem In order to solve this problem, the semiconductor device inspection method of the present invention irradiates the semiconductor substrate surface and the reference surface with coherent light in two parts, and separates the reflected light from the semiconductor substrate and the This is a semiconductor device inspection method that detects foreign substances on a semiconductor substrate based on differences in interference waveforms of reference light from a reference surface.
作用
この方法によって、半導体基板上に異物がない場合には
、反射光と参照光が干渉をおこし、異物がある場合は、
干渉が（ずれるために、異物の形状にかかわらず、半導
体基板上の異物を検出することが可能である。Effect: With this method, if there is no foreign matter on the semiconductor substrate, the reflected light and reference light will interfere; if there is a foreign matter,
Because of the interference (shift), it is possible to detect a foreign object on a semiconductor substrate regardless of the shape of the foreign object.
実施例
以下本発明の一実施例について、図面を参照Ｌ２ながら
説明する。EXAMPLE An example of the present invention will be described below with reference to the drawings.
図は、本発明の一実施例における半導体装置の検査方法
を示したものである。図において、１はコヒーレントな
光、２はビームスプリッタ、３は半導体基板、４は参照
面、５は検出器、６ａはビームスプリッタ２から半導体
基板３までの距離、６ｂはビームスプリッタ２から参照
面４までの距離である。ここで、ビームスプリッタ２か
ら半導体基板３までの距離６ａと、ビームスプリッタ２
から参照面４までの距離６ｂは等しい。The figure shows a method for testing a semiconductor device according to an embodiment of the present invention. In the figure, 1 is coherent light, 2 is a beam splitter, 3 is a semiconductor substrate, 4 is a reference plane, 5 is a detector, 6a is the distance from the beam splitter 2 to the semiconductor substrate 3, and 6b is the distance from the beam splitter 2 to the reference plane. The distance is up to 4. Here, the distance 6a from the beam splitter 2 to the semiconductor substrate 3 and the distance 6a from the beam splitter 2
The distance 6b from to the reference plane 4 is equal.
以上のような半導体装置の検査方法について、以下その
動作を説明する。The operation of the semiconductor device testing method as described above will be described below.
まず、コヒーレントな光１は、ビームスプリッタ２にお
いて２分割され、一方は半導体基板３に、他方は参照面
４に照射される。そこで、半導体基板３からの反射光と
、参照面４からの参照光が、ビームスプリッタ２で重ね
合わさり、検出器５によって検出される。この場合、ビ
ームスプリッタ２から半導体基板３までの距離６ａと、
ビームスプリッタ２から参照面４までの距離６ｂが等し
いため、半導体基板３上に異物がない場合は、ビームス
プリッタ２で重ね合わさった反射光は干渉をおこす。一
方、半導体基板３上に異物がある場合は、ビームスプリ
ッタ２で重ね合わさった反射光は干渉をおこさない。First, a coherent light 1 is split into two parts by a beam splitter 2, and one part is irradiated onto a semiconductor substrate 3 and the other part is irradiated onto a reference surface 4. Therefore, the reflected light from the semiconductor substrate 3 and the reference light from the reference surface 4 are superimposed by the beam splitter 2 and detected by the detector 5. In this case, the distance 6a from the beam splitter 2 to the semiconductor substrate 3,
Since the distance 6b from the beam splitter 2 to the reference surface 4 is equal, if there is no foreign matter on the semiconductor substrate 3, the reflected lights overlapped by the beam splitter 2 cause interference. On the other hand, if there is a foreign object on the semiconductor substrate 3, the reflected lights overlapped by the beam splitter 2 do not cause interference.
以上のように本実施例によれば、ビームスプリッタ２で
重ね合わさった反射光の干渉波形の違いによって、異物
の形状にかかわらず、半導体基板３上の異物を検出する
ことができる。As described above, according to this embodiment, the foreign object on the semiconductor substrate 3 can be detected regardless of the shape of the foreign object, based on the difference in the interference waveforms of the reflected lights superimposed by the beam splitter 2.
発明の効果
以上のように本発明は、コヒーレントな光を用いて、半
導体基板からの反射光と参照光との干渉波形の違いを検
出することにより、異物の形状にかかわらず、半導体基
板上の異物を検出することのできる優れた半導体装置の
検査方法を実現できるものである。Effects of the Invention As described above, the present invention uses coherent light to detect the difference in the interference waveform between the reflected light from the semiconductor substrate and the reference light, thereby detecting the difference in the interference waveform on the semiconductor substrate regardless of the shape of the foreign object. This makes it possible to realize an excellent semiconductor device inspection method that can detect foreign substances.
図は本発明の一実施例における半導体装置の検査方法を
示す図である。
１・・・・・・コヒーレントな光、２・・・・・・ビー
ムスプリッタ、３・・・・・・半導体基板、４・・・・
・・参照面、５・・・・・・［［ｉ、６ａ・・・・・・
ビームスプリッタから半導体基板までの距離、６ｂ・・
・・・・ビームスプリッタから参照面までの距離。The figure is a diagram showing a method for testing a semiconductor device in an embodiment of the present invention. 1...Coherent light, 2...Beam splitter, 3...Semiconductor substrate, 4...
...Reference plane, 5...[[i, 6a...
Distance from beam splitter to semiconductor substrate, 6b...
...Distance from the beam splitter to the reference plane.
Claims (1)
参照光の干渉波形の違いによって、半導体基板上の異物
を検出することを特徴とする半導体装置の検査方法。A method for inspecting a semiconductor device, which uses coherent light to detect foreign matter on a semiconductor substrate based on the difference in interference waveform between light reflected from the semiconductor substrate and reference light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP745290A JPH03211852A (en) | 1990-01-17 | 1990-01-17 | Method for inspecting semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP745290A JPH03211852A (en) | 1990-01-17 | 1990-01-17 | Method for inspecting semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03211852A true JPH03211852A (en) | 1991-09-17 |
Family
ID=11666218
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP745290A Pending JPH03211852A (en) | 1990-01-17 | 1990-01-17 | Method for inspecting semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03211852A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100871097B1 (en) * | 2007-01-08 | 2008-11-28 | 김태근 | Optical Imaging System Based on Coherent Frequency Domain Reflectometry |
| KR100896970B1 (en) * | 2008-10-01 | 2009-05-14 | 김태근 | Optical Imaging System Based on Coherent Frequency Domain Reflectometry |
-
1990
- 1990-01-17 JP JP745290A patent/JPH03211852A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100871097B1 (en) * | 2007-01-08 | 2008-11-28 | 김태근 | Optical Imaging System Based on Coherent Frequency Domain Reflectometry |
| KR100896970B1 (en) * | 2008-10-01 | 2009-05-14 | 김태근 | Optical Imaging System Based on Coherent Frequency Domain Reflectometry |
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