JPH03212110A - Manufacture of power cable-connecting insulator tube - Google Patents
Manufacture of power cable-connecting insulator tubeInfo
- Publication number
- JPH03212110A JPH03212110A JP2007489A JP748990A JPH03212110A JP H03212110 A JPH03212110 A JP H03212110A JP 2007489 A JP2007489 A JP 2007489A JP 748990 A JP748990 A JP 748990A JP H03212110 A JPH03212110 A JP H03212110A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- insulating layer
- mold
- rubber
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000012212 insulator Substances 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 claims abstract description 71
- 238000000465 moulding Methods 0.000 claims abstract description 11
- 238000005266 casting Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 12
- 238000001746 injection moulding Methods 0.000 abstract description 20
- 238000002347 injection Methods 0.000 abstract description 19
- 239000007924 injection Substances 0.000 abstract description 19
- 238000009413 insulation Methods 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract 6
- 230000000694 effects Effects 0.000 description 5
- 230000000630 rising effect Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Processing Of Terminals (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明はゴム、プラスチック電力ケーブルの差込接続部
に使用する電力ケーブル接続用絶縁筒の製造方法に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method of manufacturing an insulating tube for power cable connection used as a plug-in connection for rubber or plastic power cables.
(従来の技術と発明が解決しようとする課題)ゴム、プ
ラスチック電力ケーブルの差込接続部に使用する電力ケ
ーブル接続用絶縁筒は、第3図に縦断面図を示すように
、内部半導電体11゜
3゜
と絶縁層2と外部半導電体3とから成り、通常、内部半
導電体1と外部半導電体3は半導電EPゴムにより、絶
縁層2は絶縁性EPゴムにより構成されている。絶縁層
2はその両側にテーパ一部21を有し、また外部半導電
体は両端にストレスコーン部31を、中間に筒体部33
を有し、ストレスコーン部31の端部にはケーブルが差
込接続されたときにケーブルの絶縁層および外部適蔽層
に接する円筒部32を備えている。(Problem to be solved by the prior art and the invention) The insulating cylinder for power cable connection used in the plug-in connection part of rubber or plastic power cables has an internal semiconductor as shown in the vertical cross-sectional view in Fig. 3. 11°3°, an insulating layer 2, and an outer semiconductor 3. Usually, the inner semiconductor 1 and the outer semiconductor 3 are made of semiconductive EP rubber, and the insulating layer 2 is made of insulating EP rubber. There is. The insulating layer 2 has tapered portions 21 on both sides, and the external semiconductor has stress cone portions 31 at both ends and a cylindrical portion 33 in the middle.
The stress cone part 31 has a cylindrical part 32 at the end thereof which comes into contact with the insulation layer and the external covering layer of the cable when the cable is plugged.
このケーブル接続用絶縁筒の製造に、製造能率の向上の
ため、ゴムの射出成型が利用されているが、内部半導電
体、絶縁層、外部半導電体の順に射出成型によりモール
ドしようとしても、半導電ゴムの粘性が大きく、また外
部半導電体の筒体部の厚さが絶縁筒の外径縮少の点から
あまり厚くできない(通常3〜4■程度)ことも電
あって、外部半導体の射出成型は、半導電ゴムΔ
の流動抵抗が大きく、成型が容易でないだけでなく、射
出圧力が高くなり内側の絶縁層に変形、クラック等の損
傷を与え易い。このため内部半導電体および絶縁層は射
出成型により成型するとしても、外部半導電体たけは射
出成型によらずに生ゴムテープを巻き、これに金型を被
せ加圧加熱して成型し加硫するという能率の悪い方法に
よっているのが通常である。In order to improve manufacturing efficiency, rubber injection molding is used to manufacture this insulating tube for cable connection, but even if you try to mold the inner semiconductor layer, the insulating layer, and the outer semiconductor layer in this order by injection molding, The viscosity of the semiconducting rubber is high, and the thickness of the cylindrical part of the external semiconductor cannot be made very thick (usually about 3 to 4 cm) due to the reduction in the outer diameter of the insulating cylinder. In injection molding, the flow resistance of the semiconductive rubber Δ is large, which not only makes molding difficult, but also increases the injection pressure, which tends to cause damage such as deformation and cracks to the inner insulating layer. For this reason, even though the internal semiconductor and insulating layer are molded by injection molding, the external semiconductor layer is not injection molded, but is wrapped in raw rubber tape, covered with a mold, heated under pressure, molded, and vulcanized. Usually, this is done using the inefficient method of
これを改善するために、内部半導電体と外部半導電体と
を予め製作しておき、これらを絶縁層成型用の金型内に
配置し、金型内に流動抵抗が小さい絶縁ゴムの射出成型
を行い、絶縁層を成型するという方法が試みられている
。In order to improve this, an inner semiconductor and an outer semiconductor are manufactured in advance, placed in a mold for forming an insulating layer, and an insulating rubber with low flow resistance is injected into the mold. A method of molding and molding an insulating layer has been attempted.
然し、外部半導電体が内径の大きい筒体部33の両側に
ストレスコーン部31の内径が小さい円筒部32を有す
るという形状であるため射出成型後に金型の中子を抜く
ことが難しく外部半導電体を射出成型により一体として
製造することは困難である。また、外部半導電体の内部
に絶縁層を注型する場合に、ストレスコーン部31の円
筒部32に隣接するテーパー立上り部と金型の中子との
間の空気が抜は難いため、この部分に気泡を残し易く、
成形された絶縁筒のストレスコーン部のテーパー立上り
部において外部半導電体と絶縁層との界面ンこ空隙を生
じさせたり、界面に乱れを生じさせたりする難点がある
。上記の部分の空気を抜くためにストレスコーン部のテ
ーパー立上り部に空気抜き用の孔を設けることが考えら
れるが、外部半導電体のこの部分に孔を設けることは電
界の乱れを生じさせ、充分な空気抜き効果をもつ大きさ
の孔を設けるとすれはその影響が大きく、高電圧ケーブ
ルの接続用絶縁筒の製造においては採用し難い。更に、
予め製作した外部半導電体のストレスコーン部の円筒部
32の内径とこれをセットする金型の中子の外径との選
定如何によっては射出成型した絶縁層の内径と外部半導
電体のストレスコーン部の円筒部の内径との間に径差を
生しることがあり、外部半導電体の製作誤差中子の外径
の調整誤差が上記径差を生じさせ易い。However, since the outer semiconductor body has a cylindrical part 32 with a small inner diameter of the stress cone part 31 on both sides of a cylindrical part 33 with a large inner diameter, it is difficult to remove the core of the mold after injection molding. It is difficult to manufacture conductors in one piece by injection molding. Furthermore, when casting an insulating layer inside the external semiconductor, it is difficult to remove air between the tapered rising part of the stress cone part 31 adjacent to the cylindrical part 32 and the mold core. It tends to leave air bubbles in the parts,
There is a problem in that a gap is formed at the interface between the external semiconductor and the insulating layer at the tapered rising portion of the stress cone portion of the formed insulating cylinder, and the interface is disturbed. It is conceivable to provide an air vent hole in the tapered rising part of the stress cone part in order to vent air from the above part, but providing a hole in this part of the external semiconductor will cause disturbance of the electric field, so it is not enough. If a hole is provided with a size that has an air venting effect, the effect will be large, and it is difficult to employ it in the manufacture of insulating tubes for connecting high voltage cables. Furthermore,
Depending on the selection of the inner diameter of the cylindrical part 32 of the stress cone portion of the external semiconductor prepared in advance and the outer diameter of the mold core in which it is set, the inner diameter of the injection molded insulating layer and the stress of the outer semiconductor A difference in diameter may occur between the inner diameter of the cone part and the inner diameter of the cylindrical part, and manufacturing errors in the outer semiconductor body and adjustment errors in the outer diameter of the core are likely to cause the above-mentioned difference in diameter.
上記したような難点のために、予め製作したイネ
内部半導電および外部半導電体を金型内にセラ人
トし、金型内に絶縁ゴムを注型して絶縁層を成型すると
いう方法は実用化が難しく、前述したように、通常は、
射出成型した絶縁層上に半導電性の生ゴムテープを巻き
、金型て加圧、加熱して成型し加硫するという能率の悪
い方法が実施されていた訳である。Due to the above-mentioned difficulties, the method of placing the pre-fabricated rice internal semiconducting material and external semiconducting material into a mold, and then casting insulating rubber into the mold to form an insulating layer is not possible. It is difficult to put it into practical use, and as mentioned above, it is usually
The inefficient method used was to wrap a semiconductive raw rubber tape around an injection-molded insulating layer, pressurize it with a mold, heat it, mold it, and vulcanize it.
本発明は上記難点を一掃して内部半導電体、絶縁層およ
び外部半導電体の全てを射出成型により成型することを
可能にするケーブル接続用絶縁筒の新規な製造法を提案
するものである。The present invention proposes a new manufacturing method for an insulating tube for cable connection, which eliminates the above-mentioned difficulties and makes it possible to mold all of the inner semiconductor, insulating layer, and outer semiconductor by injection molding. .
(l!題を解決するための手段)
本発明は予め成型した内部半導電体と外部半導電体筒体
部とを絶縁層成型用金型内に配置し、該金型内に絶縁ゴ
ムを注型してゴム絶縁層を成型したのちに、外部半導電
体の筒体部両側に半導電ゴムを注型して絶縁層上に外部
半導電体のストレスコーン部を成型することを特徴とす
る。(l! Means for Solving the Problem) The present invention arranges a pre-molded inner semiconductor and an outer semiconductor cylindrical part in a mold for molding an insulating layer, and insulating rubber is placed in the mold. The method is characterized in that after a rubber insulating layer is formed by casting, semiconducting rubber is cast on both sides of the cylindrical part of the outer semiconductor, and the stress cone part of the outer semiconductor is formed on the insulating layer. do.
(実施例および作用) 本発明およびその実施例を以下に詳細説明する。(Examples and effects) The present invention and its embodiments will be described in detail below.
本発明においては外部半導電体の藺体部と内部半導電体
とを半導電EPゴム等により予め裏作しておく。また外
部半導電体の筒体部には予め絶縁ゴムの注入口を設けて
おく。これらの製作は射出成型による成型に限られる訳
ではないが、製作の能率、コストの面から射出成型によ
り成型することが望ましく、また本発明の目的に最もよ
く適うものである。外部半導電体の筒体部のみを射出成
型により成型することには、外部半導電体の全体を一体
として射出成型する場合と異なり、格別な困難はない。In the present invention, the outer semiconductor body and the inner semiconductor body are lined in advance with semiconductive EP rubber or the like. Further, an injection port for insulating rubber is provided in advance in the cylindrical portion of the external semiconductor. The production of these is not limited to injection molding, but from the viewpoint of production efficiency and cost, injection molding is preferable and most suitable for the purpose of the present invention. There is no particular difficulty in molding only the cylindrical portion of the external semiconductor by injection molding, unlike in the case of injection molding the entire external semiconductor as one piece.
予め製作した内部半導電体と外部半導電体筒体部とを第
1図に示すように金型内に配置したのち、金型内に絶縁
ゴムを注入して絶縁層を射出成型し、更に加熱加硫する
。この場合、金型或は中子に適当tこ空気抜きを設けて
おけば射出成型された絶縁層のテーパ一部の立ち上り部
に残留空気に基づく表面の乱れが生じる惧れはない。第
1図において1は予め成型された内部半導電体であり、
33は同じく予め成型された外部半導電体の筒体部であ
る。34は該筒体部に設けた絶縁ゴム注入口である。5
は金型であり、長手方向或は径方向に割りを入れた割合
型として構成されている。6は該金型に設けた絶縁ゴム
注入口(射出ゲート)で、外部半導電体筒体部33の絶
縁ゴム注入口34に連通している。After placing the prefabricated inner semiconductor body and outer semiconductor cylindrical part in a mold as shown in Figure 1, insulating rubber is injected into the mold and an insulating layer is injection molded. Heat and vulcanize. In this case, if an appropriate air vent is provided in the mold or core, there is no risk of surface disturbance due to residual air at the rising part of the tapered part of the injection-molded insulating layer. In FIG. 1, 1 is a pre-molded internal semiconductor,
Reference numeral 33 designates a cylindrical body portion of the external semiconductor body which is also previously molded. 34 is an insulating rubber injection port provided in the cylindrical body portion. 5
is a mold, and is constructed as a proportioned mold with splits in the longitudinal or radial direction. Reference numeral 6 denotes an insulating rubber injection port (injection gate) provided in the mold, which communicates with the insulating rubber injection port 34 of the external semiconductor cylindrical body portion 33 .
7は中子である。筒体部34の絶縁ゴム注入口34は絶
縁層の成型、加硫後に切断し、切断面には半導電塗料を
塗布する。7 is the core. The insulating rubber injection port 34 of the cylindrical body portion 34 is cut after the insulating layer is molded and vulcanized, and a semiconductive paint is applied to the cut surface.
次に、第2図に示すように、上述のようにして得られた
内部半導電体1、絶縁層2および外部半導電体筒体部3
3より成る絶縁筒半成型体8に外部半導電体のストレス
コーン部を成型するための金型9を被せて、金型内に半
導電ゴムを注型して外部半導電体のストレスコーン部を
射出成型し、更に加熱加硫する。10は金型の半導電ゴ
ム注入口であり、7は中子である。絶縁層のテーパ一部
の表面が乱れがなくきれいに仕上っておれば、ストレス
コーン部を射出成形したとさ、絶縁層とストレスコーン
部との界面も乱れがなくきれいに仕上る。Next, as shown in FIG.
A mold 9 for molding the stress cone portion of the external semiconductor is placed on the insulating cylindrical semi-molded body 8 consisting of 3, and semiconducting rubber is cast into the mold to form the stress cone portion of the external semiconductor. is injection molded and then heated and vulcanized. 10 is a semiconductive rubber injection port of the mold, and 7 is a core. If the surface of the tapered part of the insulating layer is finished neatly without any disturbances, when the stress cone portion is injection molded, the interface between the insulating layer and the stress cone portion will also be finished neatly without any disturbances.
以上の方法によりケーブル接続用絶縁筒を全て射出成型
により成型することができる。By the method described above, the entire insulating tube for cable connection can be molded by injection molding.
射出成型では金型は加熱された熱板にセットされており
、また予熱されたゴムが金型内に注入される。In injection molding, a mold is set on a heated hot plate, and preheated rubber is injected into the mold.
従ってゴムの生テープを巻きこれに金型を被せて加熱す
る場合に較べて加硫時間は約半分に短縮される。Therefore, the vulcanization time is reduced to about half compared to when a raw rubber tape is wrapped and a mold is placed over the tape and heated.
上記はケーブルの直線接続用の絶縁筒を製造する場合に
ついて説明したが、本発明の方法は第4図に示すような
ケーブル接続用のエルポー絶縁筒を製造する場合にも勿
論適用でき、形状がより複雑なエルポー絶縁筒を製造す
る場合に本発明の方法はより効果的である。第4図ンこ
おいて1は内部半導電体であり、2は絶縁層、3は外部
半導電体であり、外部半導電体3は筒体部33とその両
側のストレスコーン部31とを備えている。内部半導電
体1の内部にこれと一体に導体接続用金具が埋込れるこ
ともある。このようなエルポー絶縁筒の製造においても
、直線接続用の絶縁筒を製造する場合と同じく、予め外
部半導電体の筒体部と内部半導電体を製作しておき、こ
れらを金型内に配置し、絶縁ゴムを金型内に注型して絶
縁層を射出成型し、加硫し、次いで外部半導電体のスト
レスコーン部を成型するための金型を被せ、金型内に半
導電ゴムを注型してストレスコーン部を射出成型し、加
硫する。Although the above description has been made regarding the case of manufacturing an insulating tube for straight line connection of cables, the method of the present invention can of course be applied to the case of manufacturing an elbow insulating tube for cable connection as shown in FIG. The method of the present invention is more effective when manufacturing more complex elbow insulation tubes. In FIG. 4, 1 is an internal semiconductor, 2 is an insulating layer, and 3 is an external semiconductor. We are prepared. A conductor connection fitting may be embedded inside the internal semiconductor body 1 integrally therewith. In manufacturing such elbow insulating tubes, as in the case of manufacturing insulating tubes for linear connections, the cylindrical portion of the external semiconductor and the internal semiconductor are manufactured in advance, and these are placed in a mold. The insulating rubber is injection molded into the mold, the insulating layer is injection molded, and the insulating layer is vulcanized.Then, a mold for molding the stress cone of the external semiconductor is covered, and the semiconductor is injected into the mold. Rubber is cast and the stress cone part is injection molded and vulcanized.
(発明の効果) 本発明の製造方法によれば、内部半導電体、電 絶縁層および外部半導体の全てを製造効率のよ△ い射出成型により製造することが可能になり。(Effect of the invention) According to the manufacturing method of the present invention, the internal semiconductor All insulating layers and external semiconductors are manufactured with high manufacturing efficiency. It can now be manufactured using injection molding.
かつ容易である。従来の外部半導電体を生ゴムテープを
巻きこれに金型を被せて加熱成型していた場合に較べる
と、生ゴムテープを手巻きする工程が省略でき、また前
述したように射出成型によるときは加硫時間が大巾に短
縮されるので、製造効率を著しく向上することができる
。And easy. Compared to the conventional method of wrapping raw rubber tape around the external semiconductor and heat-molding it by covering it with a mold, the process of manually winding the raw rubber tape can be omitted, and as mentioned above, injection molding requires less processing time. Since the sulfur time is greatly shortened, manufacturing efficiency can be significantly improved.
しかも、本発明の方法によれば、従来の絶縁層を成型し
たのちに外部半導電体全体を射出成型する場合や、予め
ストレスコーン部全体を含めた外部半導電体全体を製作
しておきこれを金型内に配置して絶縁層を射出成形する
場合における難点、すなわち外部半導電体の射出成型時
に絶縁層の変形やクラックを生じさせたり、外部半導電
体のストレスコーン部と絶縁層との界面に乱れを生じさ
せたり、或はストレスコーン部の円筒部の内径と絶縁層
の内径との間に径差を生じさせたりするような難点が一
掃され、耐電圧性の高い接続用絶縁筒を得ることができ
る。Moreover, according to the method of the present invention, it is possible to injection mold the entire external semiconductor after molding the conventional insulating layer, or to manufacture the entire external semiconductor including the entire stress cone in advance. When injection molding an insulating layer by arranging it in a mold, there are some difficulties, such as deformation or cracking of the insulating layer during injection molding of the external semiconductor, and the possibility that the stress cone of the external semiconductor and the insulating layer may This eliminates problems such as disturbances at the interface between the stress cone and the diameter difference between the inner diameter of the cylindrical part of the stress cone and the inner diameter of the insulating layer. You can get a tube.
なお、本発明の製造法では内部半導電体、絶縁層、外部
半導電体の筒体部、ストレスコーン部の全てを射出成型
することが最も有利であり、かつ本発明の目的に最もよ
く適うものであるが、本発明は予め製作する内部半導電
体および外部半導電体筒体部の製造を射出成型による製
作に限定するものではない。これらが射出成型以外の方
法により予め製作されている場合においても、上記した
本発明の効果を享受できるからで4
ある。In addition, in the manufacturing method of the present invention, it is most advantageous to injection mold all of the inner semiconductor, the insulating layer, the cylindrical part of the outer semiconductor, and the stress cone part, and it is most suitable for the purpose of the present invention. However, the present invention does not limit the manufacture of the internal semiconductor body and the external semiconductor cylinder body portion to be manufactured in advance by injection molding. This is because even if these are manufactured in advance by a method other than injection molding, the effects of the present invention described above can be enjoyed.
第1図および第2図は本発明の製造方法による絶縁層お
よび外部半導電体のストレスコーン部の成型を説明する
縦断面図であり、第3図および第4図はそれぞれケーブ
ルの直線接続用の絶縁筒およびエルボ−絶縁筒の縦断面
図である。
(符号の説明)
■=内部半導電体、2:絶縁層、3:外部半導[体、
31 :ストレスコーン部、33;筒体部、5:金型
、7:中子1 and 2 are longitudinal cross-sectional views illustrating the forming of the stress cone portion of the insulating layer and the external semiconductor by the manufacturing method of the present invention, and FIGS. 3 and 4 are respectively for straight connection of cables. FIG. (Explanation of symbols) ■=Inner semiconductor, 2: Insulating layer, 3: External semiconductor [body,
31: Stress cone part, 33; Cylinder part, 5: Mold, 7: Core
Claims (1)
縁層成型用金型内に配置し、該金型内に絶縁ゴムを注型
してゴム絶縁層を成型したのちに、外部半導電体の筒体
部両側に半導電ゴムを注型して絶縁層上に外部半導電体
のストレスコーン部を成型することを特徴とする電力ケ
ーブル接続用絶縁筒の製造方法。The pre-molded inner semiconductor body and outer semiconductor cylindrical part are placed in a mold for forming an insulating layer, and after insulating rubber is cast into the mold to form the rubber insulating layer, A method for manufacturing an insulating cylinder for connecting a power cable, characterized by casting semiconductive rubber on both sides of a cylindrical part of a semiconductor, and molding a stress cone part of an external semiconductor on an insulating layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007489A JPH0667086B2 (en) | 1990-01-16 | 1990-01-16 | Method for manufacturing insulating tube for connecting power cable |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007489A JPH0667086B2 (en) | 1990-01-16 | 1990-01-16 | Method for manufacturing insulating tube for connecting power cable |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03212110A true JPH03212110A (en) | 1991-09-17 |
| JPH0667086B2 JPH0667086B2 (en) | 1994-08-24 |
Family
ID=11667179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007489A Expired - Fee Related JPH0667086B2 (en) | 1990-01-16 | 1990-01-16 | Method for manufacturing insulating tube for connecting power cable |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0667086B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008067597A (en) * | 2007-10-25 | 2008-03-21 | Swcc Showa Cable Systems Co Ltd | Connector, inter-board connecting member using this connector, and cable terminal connecting portion using said connector |
| JP2023040782A (en) * | 2021-09-10 | 2023-03-23 | 株式会社プロテリアル | Power cable termination connection portion and manufacturing method thereof |
-
1990
- 1990-01-16 JP JP2007489A patent/JPH0667086B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008067597A (en) * | 2007-10-25 | 2008-03-21 | Swcc Showa Cable Systems Co Ltd | Connector, inter-board connecting member using this connector, and cable terminal connecting portion using said connector |
| JP2023040782A (en) * | 2021-09-10 | 2023-03-23 | 株式会社プロテリアル | Power cable termination connection portion and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0667086B2 (en) | 1994-08-24 |
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