JPH0321332A - Highly selective gas separation composite membrane - Google Patents
Highly selective gas separation composite membraneInfo
- Publication number
- JPH0321332A JPH0321332A JP15730689A JP15730689A JPH0321332A JP H0321332 A JPH0321332 A JP H0321332A JP 15730689 A JP15730689 A JP 15730689A JP 15730689 A JP15730689 A JP 15730689A JP H0321332 A JPH0321332 A JP H0321332A
- Authority
- JP
- Japan
- Prior art keywords
- membrane
- carbon atoms
- fumarate
- gas separation
- composite membrane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012528 membrane Substances 0.000 title claims abstract description 68
- 239000002131 composite material Substances 0.000 title claims abstract description 21
- 238000000926 separation method Methods 0.000 title claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 20
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- LKKPNUDVOYAOBB-UHFFFAOYSA-N naphthalocyanine Chemical class N1C(N=C2C3=CC4=CC=CC=C4C=C3C(N=C3C4=CC5=CC=CC=C5C=C4C(=N4)N3)=N2)=C(C=C2C(C=CC=C2)=C2)C2=C1N=C1C2=CC3=CC=CC=C3C=C2C4=N1 LKKPNUDVOYAOBB-UHFFFAOYSA-N 0.000 claims abstract description 11
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 6
- 125000001424 substituent group Chemical group 0.000 claims abstract description 6
- 125000000547 substituted alkyl group Chemical group 0.000 claims abstract description 4
- -1 fumaric acid diester Chemical class 0.000 claims description 45
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 40
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Natural products OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 claims description 37
- 239000001530 fumaric acid Substances 0.000 claims description 23
- 125000004432 carbon atom Chemical group C* 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 9
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 125000005842 heteroatom Chemical group 0.000 claims description 4
- 125000005843 halogen group Chemical group 0.000 claims description 3
- 125000005346 substituted cycloalkyl group Chemical group 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 12
- 238000000807 solvent casting Methods 0.000 abstract description 3
- 238000007740 vapor deposition Methods 0.000 abstract description 3
- 150000001875 compounds Chemical class 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 150000005690 diesters Chemical class 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 32
- 239000010409 thin film Substances 0.000 description 24
- 239000010408 film Substances 0.000 description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- 230000035699 permeability Effects 0.000 description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 15
- 229910052760 oxygen Inorganic materials 0.000 description 15
- 239000001301 oxygen Substances 0.000 description 15
- 229920000642 polymer Polymers 0.000 description 13
- 125000004469 siloxy group Chemical group [SiH3]O* 0.000 description 11
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 229920001296 polysiloxane Polymers 0.000 description 9
- ANRHNWWPFJCPAZ-UHFFFAOYSA-M thionine Chemical compound [Cl-].C1=CC(N)=CC2=[S+]C3=CC(N)=CC=C3N=C21 ANRHNWWPFJCPAZ-UHFFFAOYSA-M 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 239000004743 Polypropylene Substances 0.000 description 6
- 238000006116 polymerization reaction Methods 0.000 description 6
- 229920001155 polypropylene Polymers 0.000 description 6
- 238000003892 spreading Methods 0.000 description 6
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 5
- 150000002430 hydrocarbons Chemical group 0.000 description 4
- 229920000620 organic polymer Polymers 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000004205 dimethyl polysiloxane Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 3
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 3
- 229920006254 polymer film Polymers 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 238000009834 vaporization Methods 0.000 description 3
- 230000008016 vaporization Effects 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 244000043261 Hevea brasiliensis Species 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000005062 Polybutadiene Substances 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 239000003708 ampul Substances 0.000 description 2
- WDEQGLDWZMIMJM-UHFFFAOYSA-N benzyl 4-hydroxy-2-(hydroxymethyl)pyrrolidine-1-carboxylate Chemical compound OCC1CC(O)CN1C(=O)OCC1=CC=CC=C1 WDEQGLDWZMIMJM-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 239000001913 cellulose Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000007334 copolymerization reaction Methods 0.000 description 2
- MSVGHYYKWDQHFV-BQYQJAHWSA-N ditert-butyl (e)-but-2-enedioate Chemical compound CC(C)(C)OC(=O)\C=C\C(=O)OC(C)(C)C MSVGHYYKWDQHFV-BQYQJAHWSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920003052 natural elastomer Polymers 0.000 description 2
- 229920001194 natural rubber Polymers 0.000 description 2
- 229920001197 polyacetylene Polymers 0.000 description 2
- 229920002857 polybutadiene Polymers 0.000 description 2
- 239000003505 polymerization initiator Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- NIISBQNZHJKWDS-AATRIKPKSA-N (E)-4-(2,5-dimethylhexan-3-yloxy)-4-oxobut-2-enoic acid Chemical compound CC(C)CC(C(C)C)OC(=O)\C=C\C(O)=O NIISBQNZHJKWDS-AATRIKPKSA-N 0.000 description 1
- JIFYESTXGWSCMR-AATRIKPKSA-N (E)-4-(2,6-dimethylheptan-4-yloxy)-4-oxobut-2-enoic acid Chemical compound CC(C)CC(CC(C)C)OC(=O)\C=C\C(O)=O JIFYESTXGWSCMR-AATRIKPKSA-N 0.000 description 1
- NBRXWLFYHKFJSO-MDZDMXLPSA-N (E)-4-(4-ethyl-2-methyloctan-3-yl)oxy-4-oxobut-2-enoic acid Chemical compound CCCCC(CC)C(C(C)C)OC(=O)\C=C\C(O)=O NBRXWLFYHKFJSO-MDZDMXLPSA-N 0.000 description 1
- ADPPMQUYEVRJGN-VOTSOKGWSA-N (E)-4-[2,2-dimethylpropyl(dimethyl)silyl]oxy-4-oxobut-2-enoic acid Chemical compound CC(C)(C)C[Si](C)(C)OC(=O)\C=C\C(O)=O ADPPMQUYEVRJGN-VOTSOKGWSA-N 0.000 description 1
- WCTPKXDDBWKQJF-CMDGGOBGSA-N (E)-4-[cyclohexylmethyl(dimethyl)silyl]oxy-4-oxobut-2-enoic acid Chemical compound OC(=O)/C=C/C(=O)O[Si](C)(C)CC1CCCCC1 WCTPKXDDBWKQJF-CMDGGOBGSA-N 0.000 description 1
- GPUQAVJXGNOGDT-AATRIKPKSA-N (E)-4-[dimethyl(propyl)silyl]oxy-4-oxobut-2-enoic acid Chemical compound CCC[Si](C)(C)OC(=O)\C=C\C(O)=O GPUQAVJXGNOGDT-AATRIKPKSA-N 0.000 description 1
- MQZDRCLJRULPKE-AATRIKPKSA-N (E)-4-[ethyl(dimethyl)silyl]oxy-4-oxobut-2-enoic acid Chemical compound CC[Si](C)(C)OC(=O)\C=C\C(O)=O MQZDRCLJRULPKE-AATRIKPKSA-N 0.000 description 1
- FHGPJHNJOBQYOR-VOTSOKGWSA-N (E)-4-oxo-4-(2,2,5-trimethylhexan-3-yloxy)but-2-enoic acid Chemical compound CC(C)CC(C(C)(C)C)OC(=O)\C=C\C(O)=O FHGPJHNJOBQYOR-VOTSOKGWSA-N 0.000 description 1
- UTOVMEACOLCUCK-SNAWJCMRSA-N (e)-4-butoxy-4-oxobut-2-enoic acid Chemical compound CCCCOC(=O)\C=C\C(O)=O UTOVMEACOLCUCK-SNAWJCMRSA-N 0.000 description 1
- KMHSUNDEGHRBNV-UHFFFAOYSA-N 2,4-dichloropyrimidine-5-carbonitrile Chemical compound ClC1=NC=C(C#N)C(Cl)=N1 KMHSUNDEGHRBNV-UHFFFAOYSA-N 0.000 description 1
- WSSSPWUEQFSQQG-UHFFFAOYSA-N 4-methyl-1-pentene Chemical compound CC(C)CC=C WSSSPWUEQFSQQG-UHFFFAOYSA-N 0.000 description 1
- 102100023826 ADP-ribosylation factor 4 Human genes 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- 101000623895 Bos taurus Mucin-15 Proteins 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920001393 Crofelemer Polymers 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 101000684189 Homo sapiens ADP-ribosylation factor 4 Proteins 0.000 description 1
- YIVJZNGAASQVEM-UHFFFAOYSA-N Lauroyl peroxide Chemical compound CCCCCCCCCCCC(=O)OOC(=O)CCCCCCCCCCC YIVJZNGAASQVEM-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000003282 alkyl amino group Chemical group 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- RSRICHZMFPHXLE-AATRIKPKSA-N bis(2-methylpropyl) (e)-but-2-enedioate Chemical compound CC(C)COC(=O)\C=C\C(=O)OCC(C)C RSRICHZMFPHXLE-AATRIKPKSA-N 0.000 description 1
- 238000012662 bulk polymerization Methods 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- MPMSMUBQXQALQI-UHFFFAOYSA-N cobalt phthalocyanine Chemical compound [Co+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 MPMSMUBQXQALQI-UHFFFAOYSA-N 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000502 dialysis Methods 0.000 description 1
- BLKQQTCUGZJWLN-VAWYXSNFSA-N dicyclohexyl (e)-but-2-enedioate Chemical compound C1CCCCC1OC(=O)/C=C/C(=O)OC1CCCCC1 BLKQQTCUGZJWLN-VAWYXSNFSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 125000001303 disiloxanyl group Chemical group [H][Si]([*])([H])O[Si]([H])([H])[H] 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 125000003827 glycol group Chemical group 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- XWHPIFXRKKHEKR-UHFFFAOYSA-N iron silicon Chemical compound [Si].[Fe] XWHPIFXRKKHEKR-UHFFFAOYSA-N 0.000 description 1
- LRDFRRGEGBBSRN-UHFFFAOYSA-N isobutyronitrile Chemical compound CC(C)C#N LRDFRRGEGBBSRN-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- LBAIJNRSTQHDMR-UHFFFAOYSA-N magnesium phthalocyanine Chemical compound [Mg].C12=CC=CC=C2C(N=C2NC(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2N1 LBAIJNRSTQHDMR-UHFFFAOYSA-N 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 125000006340 pentafluoro ethyl group Chemical group FC(F)(F)C(F)(F)* 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 229920001515 polyalkylene glycol Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920005597 polymer membrane Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000007870 radical polymerization initiator Substances 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000001223 reverse osmosis Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000000108 ultra-filtration Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Landscapes
- Separation Using Semi-Permeable Membranes (AREA)
Abstract
Description
【発明の詳細な説明】
く産業上の利用分野〉
本発明は、高選択性気体分離複合膜に関し、さらに詳し
くはフマル酸ジエステル重合体の薄膜上に金属フタロシ
アニン又はナフタロフタ口シアニン誘導体(以下両者を
まとめて金属フタロシアニン誘導体という)を蒸着して
なる機能性膜を有する高選択性気体分離膜に関する。Detailed Description of the Invention Industrial Field of Application The present invention relates to a highly selective gas separation composite membrane, and more specifically, the present invention relates to a highly selective gas separation composite membrane. The present invention relates to a highly selective gas separation membrane having a functional membrane formed by vapor-depositing metal phthalocyanine derivatives.
〈従来の技術〉
高分子素材の膜を用いて行う気体の分離′a縮は、近年
省資源、省エネルギーの観点から注目を集めている.な
かでも空気から酸素濃度の高められた酸素富化空気が安
価にかつ連続的に得られれば、その価値は大きく、医療
用から産業用まで大きな効果が期待される.
ところで、工業的に実用可能な酸素富化膜は,酸素の透
過速度及び酸素に対する選択性が大きくなくてはならな
い。気体の透過速度は高分子物質に固有の値である透過
係数(通常Pで表わされ、単位はcs (STP)
・cs/al−s e c−anHg)は,膜の両側間
の差圧およびび膜の表面積に比例し、膜厚に反比例する
ことが明らかにされている.また酸素の窒素に対する選
択性は、酸素の透過係数(Pop)と窒素の透過係数(
PN2)との比(PO,/PN!、以下αと略す)によ
って定まり,実用的な透過速度を得るにはまずPO2の
大きな素材が必要で、高酸素濃度を得るためには、αの
大きな高分子を選ばねばならない.さらに大きな透過速
度を得るために膜厚を十分薄くする必要があり,機械的
強度の大きな素材が望まれている.すなわち工業的に実
用可能な酸素富化用の膜素材としては,po,およびα
が大きくかつ機械的強度および耐久性に優れたものが要
求される。しかしながら既存の高分子物質で,これらの
要求を満たすものはほとんどなく、従来からの高分子を
改質又は改良する試みも数多くなされているが,いずれ
も十分目的を達するには至っていない.これまでに知ら
れている高分子で,po,が10−3以上のものはごく
限られており、わずかにポリジメチルシロキサン、(特
開昭54−56985号)ポリ−4−メチルベンテン−
1(特開昭55−41809号)、天然ゴム、ポリアセ
チレン誘導体等があるが、αの値はいずれも3程度であ
る。例えば,天然ゴムはαの値が小さく,その主鎖に二
重結合を有するため耐久性、特に酸化安定性、耐熱性に
問題がある.同様にポリアセチレン誘導体のPO8は驚
くべき透過性を有しているが、気体の選択率が2以下で
あって低過ぎることや、機械的強度が低くしかも薄膜化
が困難であって実用的には問題が多い.又主鎖に共役二
重結合を有しているため化学的安定性(酸化安定性)に
不安がある.またポリ−4−メチルーペンテン−1は機
械的強度に優れ,化学的安定性を有し、気体の選択率も
比較的高いが,前記三種の高分子に比して気体透過性が
劣ること、有機溶媒に対する溶解性が低いために従来の
薄膜化技術に適さず、薄膜化が困難という欠点がある.
ポリジメチルシロキサンは大きな気体透過性を有してい
るが,機械的強度が弱<20μ以下の膜を作製すること
は極めて困難であり、さらにα値が、1.9と最も小さ
く,高濃度酸素富化空気の要求される用途には使用でき
ないのが実状である.
一方,気体透過性の高い高分子素材を開発するかわりに
、比較的αが大きく,かつ機械的強度に優れた素材の薄
膜化を行ない,気体透過性を克服する試みがなされてい
る.特に均質な薄膜の作成方法としては,高分子を適当
な溶媒に溶解させ、平滑な平面上にスビンコートするか
、水面展開法によって薄膜をつくることが行なわれてい
る。また高分子溶液を平滑な平面上に流延させ一部溶媒
を窯発させ、この1漠を非溶媒中に浸漬してゲル化させ
、比較的厚い多孔質層の上に均質な薄膜が形威された非
対称性の膜(「ロブ型膜」と呼ばれている)とする方法
が開発されている.その他に,多孔質の基質の表面に別
の化学組成を有する分子をγ線その他の方法でグラフト
共重合させる方法や,高周波を使ってプラズマ重合する
方法が開発されている。<Prior art> Gas separation 'a-condensation' performed using polymeric membranes has recently attracted attention from the viewpoint of resource and energy conservation. In particular, if oxygen-enriched air with increased oxygen concentration could be obtained from air cheaply and continuously, it would be of great value, and great effects could be expected from medical to industrial uses. Incidentally, an industrially practical oxygen enrichment membrane must have a high oxygen permeation rate and high selectivity to oxygen. The gas permeation rate is determined by the permeability coefficient (usually expressed as P, unit: cs (STP)), which is a value specific to polymeric substances.
・cs/al-sec-anHg) has been shown to be proportional to the differential pressure between both sides of the membrane and the surface area of the membrane, and inversely proportional to the membrane thickness. In addition, the selectivity of oxygen to nitrogen is determined by the oxygen permeability coefficient (Pop) and the nitrogen permeability coefficient (Pop).
PN2) (PO, /PN!, hereinafter abbreviated as α). To obtain a practical permeation rate, a material with a large PO2 is required, and in order to obtain a high oxygen concentration, a material with a large α is required. A polymer must be selected. In order to obtain an even higher permeation rate, the film thickness must be made sufficiently thin, and a material with high mechanical strength is desired. In other words, as industrially practical membrane materials for oxygen enrichment, po and α
A material with a large diameter and excellent mechanical strength and durability is required. However, there are almost no existing polymer materials that meet these requirements, and although many attempts have been made to modify or improve conventional polymers, none of them have been able to fully achieve their goals. Among the polymers known so far, there are only a limited number of polymers with a po of 10-3 or more, and only a few include polydimethylsiloxane, poly-4-methylbentene-
1 (Japanese Unexamined Patent Publication No. 55-41809), natural rubber, polyacetylene derivatives, etc., all of which have an α value of about 3. For example, natural rubber has a small α value and has double bonds in its main chain, so it has problems with durability, especially oxidation stability and heat resistance. Similarly, PO8, a polyacetylene derivative, has amazing permeability, but its gas selectivity is too low (less than 2), its mechanical strength is low, and it is difficult to form a thin film, making it impractical. There are many problems. Also, because it has a conjugated double bond in its main chain, there are concerns about its chemical stability (oxidative stability). In addition, poly-4-methyl-pentene-1 has excellent mechanical strength, chemical stability, and relatively high gas selectivity, but it has poor gas permeability compared to the three types of polymers mentioned above. Due to its low solubility in solvents, it is not suitable for conventional thin film formation techniques, making it difficult to form thin films.
Although polydimethylsiloxane has high gas permeability, it is extremely difficult to create a membrane with weak mechanical strength <20μ or less, and its α value is the lowest at 1.9, making it difficult to fabricate a membrane with a weak mechanical strength of less than 20μ. The reality is that it cannot be used for applications that require enriched air. On the other hand, instead of developing polymeric materials with high gas permeability, attempts have been made to overcome gas permeability by making thin films of materials with relatively large α and excellent mechanical strength. Particularly, as a method for producing a homogeneous thin film, a thin film is produced by dissolving a polymer in a suitable solvent and coating it on a smooth flat surface with a spin coating, or by a water surface spreading method. Alternatively, a polymer solution is cast onto a smooth flat surface, some of the solvent is evaporated in a kiln, and this part is immersed in a non-solvent to gel, forming a homogeneous thin film on a relatively thick porous layer. A method has been developed to create a highly asymmetric membrane (called a ``lobed membrane''). Other methods that have been developed include graft copolymerization of molecules with different chemical compositions onto the surface of a porous substrate using gamma rays or other methods, and plasma polymerization using radio frequency.
しかしながら、前述した方法では種々の問題点があり,
例えば溶媒キャスト法では10μ以下の薄膜とするには
高度な技術が必要であり工業的に行なうには問題がある
.また『ロブ型膜』 (松浦剛: 〔合成膜の基礎)P
53,1981,喜多見書房)の様な非対称性膜の製法
は,透析用膜あるいは逆浸透膜等には適した膜であるが
,気体を分離する目的には適さない6さらに,水面展開
法は,膜の欠陥を減らすため積層回数を多くとる必要が
あり,比較的厚い膜となり,十分な透過速度が得られな
いという欠点がある。その他γ線によるグラフト共重合
,プラズマ重合も検討されているが,膜厚のコントロー
ルが困難であるばかりでなく,大きな膜の作或には大装
置が必要であるのが実状である.
従って、P02が10−9以上の実用的な値を有し、強
度及びαの値が十分に大きく、しかも膜欠陥のない薄膜
とすることができる素材および薄膜化して得られる気体
分離膜の開発が強く望まれている。However, the method described above has various problems.
For example, in the solvent casting method, advanced technology is required to form a thin film of 10 μm or less, which poses problems for industrial use. Also, “lob-type membrane” (Tsuyoshi Matsuura: [Basics of synthetic membranes) P.
53, 1981, Kitami Shobo) is suitable for dialysis membranes or reverse osmosis membranes, but it is not suitable for the purpose of gas separation.6 Furthermore, the water surface development method is However, in order to reduce defects in the membrane, it is necessary to increase the number of laminations, resulting in a relatively thick membrane, which has the disadvantage that a sufficient permeation rate cannot be obtained. Graft copolymerization using gamma rays and plasma polymerization are also being considered, but the reality is that it is not only difficult to control the film thickness, but also requires large equipment to produce large films. Therefore, the development of a material that has a practical value of P02 of 10-9 or more, a sufficiently large strength and α value, and can be made into a thin film without membrane defects, and a gas separation membrane obtained by thinning the film. is strongly desired.
〈発明が解決しようとする課題〉
本発明の目的は、気体選択透過性に優れ、且つ薄膜化が
容易であり、実用的な機械的強度を有する高選択透過性
気体分離複合膜を提供することにある。<Problems to be Solved by the Invention> An object of the present invention is to provide a highly permselective gas separation composite membrane that has excellent gas selective permselectivity, is easy to form into a thin film, and has practical mechanical strength. It is in.
〈課題を解決するための手段〉
本発明によれば、下記一般式(I)
(式中,R1及びR2は同一若しくは異なる基であって
、R1及びR2の少なくとも一方の基は炭素数3〜12
の分枝アルキル基、炭素数3〜12のシクロアルキル基
、炭素数3〜14の環構造の置換基を有する炭素数2〜
6の置換アルキル基、前記環構造の置換基を有する炭素
数3〜10の置換シクロアルキル基又はシロキサン系炭
化水素基を表わし、前記各々の基にはへテロ原子が含ま
れていても良く、またハロゲン原子で置換されていても
良い)で示されるフマル酸ジエステルの反復単位を含む
薄膜上に,金属フタ口シアニン又はナフタロシアニン誘
導体を蒸着してなる機能性膜を有する高選択性気体分離
複合膜が提供される.以下本発明を更に詳細に説明する
.
本発明の高選択性気体分Jv複合膜は、特定のフマル酸
ジエステルの反復単位を含む薄膜上に,金属フタロシア
ニン誘導体(ナフタロシアニン誘導体を含む)を蒸着し
てなる機能性膜を有することを特徴とする.
本発明において、フマル酸ジエステルの反復単位は、下
記一般式(夏)で表わすことができ、式中、R1及びR
2は同一若しくは異なる基であって,Rユ及びR2の少
なくとも一方の基は炭素数3〜12の分枝アルキル基、
炭素数3〜12のシクロアルキル基、炭素数3〜14の
環構造の置換基を有する炭素数2〜6の置換アルキル基
、前記環構造の置換基を有する炭素数3〜10の置換シ
クロアルキル基又はシロキサン系炭化水素基を表わし.
前記各基には窒素原子,酸素原子、リン原子、イオウ原
子等のへテロ原子が含まれていても良く,またハロゲン
原子で置換されていても良い。<Means for Solving the Problems> According to the present invention, the following general formula (I) (wherein R1 and R2 are the same or different groups, and at least one of R1 and R2 has 3 to 3 carbon atoms) 12
A branched alkyl group having 3 to 12 carbon atoms, a cycloalkyl group having 3 to 12 carbon atoms, and a substituent having a ring structure having 3 to 14 carbon atoms.
6 substituted alkyl group, a substituted cycloalkyl group having 3 to 10 carbon atoms or a siloxane hydrocarbon group having a substituent in the ring structure, each of the groups may contain a heteroatom, A highly selective gas separation composite having a functional membrane formed by depositing a metal capped cyanine or naphthalocyanine derivative on a thin membrane containing a repeating unit of fumaric acid diester (which may also be substituted with a halogen atom). A membrane is provided. The present invention will be explained in more detail below. The highly selective gas component Jv composite film of the present invention is characterized by having a functional film formed by depositing a metal phthalocyanine derivative (including a naphthalocyanine derivative) on a thin film containing repeating units of a specific fumaric acid diester. Suppose that In the present invention, the repeating unit of fumaric acid diester can be represented by the following general formula (summer), in which R1 and R
2 are the same or different groups, and at least one of R and R is a branched alkyl group having 3 to 12 carbon atoms,
A cycloalkyl group having 3 to 12 carbon atoms, a substituted alkyl group having 2 to 6 carbon atoms having a substituent having a ring structure having 3 to 14 carbon atoms, and a substituted cycloalkyl group having 3 to 10 carbon atoms having a substituent having the above ring structure. group or a siloxane-based hydrocarbon group.
Each of the above groups may contain a heteroatom such as a nitrogen atom, an oxygen atom, a phosphorus atom, a sulfur atom, or the like, or may be substituted with a halogen atom.
この際R1及びR2が前記各基の炭素数の範囲外である
場合には製造が困難である。また,R1及びR2の一方
の基のみが前記炭化水素基の場合、他方の基は炭素数1
〜12のアルキル基,炭素数3〜12のシクロアルキル
基であるのが望ましい。At this time, production is difficult if R1 and R2 are outside the range of carbon numbers of each group. In addition, when only one of R1 and R2 is the hydrocarbon group, the other group has 1 carbon number.
-12 alkyl groups and cycloalkyl groups having 3 to 12 carbon atoms are preferable.
前記一般式(I)で表わされる構造単位を有するフマル
酸ジエステルとしては、例えばフマル酸ジイソプ口ピル
、フマル酸ジーtert−ブチル、フマル酸ジシクロヘ
キシル,フマル酸ジーsea一ブチル,フマル酸ジー4
−メチル−2−ペンチル、フマル酸イソプロビルーte
rt−ブチル、フマル酸イソプロピルーイソアミル、フ
マル酸イソプロビル−4−メチル−2−ペンチル、フマ
ル酸イソプロビル−2−エチルヘキシル、フマル酸イソ
プロピルーノニル、フマルfil−tert−ブチルー
sec−ブチル、フマル酸−tert−プチルーイソア
ミル、フマル酸一tert−プチル−4−メチル−2−
ペンチル,フマル酸一tert−ブチルー2−エチルヘ
キシル等の炭化水素基を有するフマル酸ジエステル,メ
チルー(トリメチルシリル)一フマレート、エチルー(
トリメチルシリル)一フマレート、イソプロビル=(ト
リメチルシリル)一フマレート、シクロヘキシル(トリ
メチルシリル)一フマレート、tert−ブチルー(ト
リメチルシリル)一フマレート、イソプロビル〔3−ト
リス(トリメチルシロキシ)シリル〕プロビルーフマレ
ート,イソプロビル−3−〔(ペンタメチル)ジシロキ
サニル〕プロピルーフマレート等のシロキサン系炭化水
素基を有するフマル酸ジエステル、N,N−ジメチルア
ミノエチルーイソプロビルフマレート、tert−ブチ
ルー1−ブトキシ−2−プロビルフマレート、2−シア
ノエチルーイソプロビルフマレート、グリシジルーイソ
プロビルフマレート,ジエチルホスホノメチルーイソプ
口ピルフマレート、2−メチルチオエチルーイソプロビ
ルフマレート等のへテロ原子を有するフマル酸ジエステ
ル、パーフルオロオクチルエチルーイソプロピルフマレ
ート、トリフルオロメチルーイソブロビルフマレート、
ペンタフルオロエチルーイソプロビルフマレート、ヘキ
サフルオ口イソプ口ピルーイソプロビルフマレート,1
−クロ′ロプロピルーイソプロピルフマレート等のハロ
ゲン置換炭化水素基を有するフマル酸ジエステル等を挙
げることができる.本発明において,前記一般式(I)
で表わされるフマル酸ジエステルの反復単位を有するフ
マル酸ジエステル重合体を製造するには、フマル酸ジエ
ステル類を,通常のラジカル重合方法等により合成する
ことができる.重合に際して用いる重合開始剤としては
,選択10時間半減期温度が120℃以下の有機過酸化
物及びアゾ化合物等の1種又は2種以上を使用すること
ができる.
具体的には例えば,過酸化ベンゾイル、ジイソプロビル
ベルオキシカーボネート、tart−プチルペルオキシ
−2−エチルヘキサノエート、tart−プチルペルオ
キシピパレート, tart −プチルペルオキシジイ
ソブチレート、過酸化ラウロイル,アゾビスイソブチロ
ニトリル等が挙げられる.重合開始剤の使用量としては
原料モノマー100重量部に対して10重量部以下が好
ましく,さらに好ましくは5重量部以下である。又II
Iの性能,特に機械的強度,l!膜性、気体透過性等の
初点から、用いるフマル酸ジエステル重合体の分子量は
高い方がよく、10,000〜1,000,OOOが好
ましい.また重合条件は、10〜60℃程度の低温で、
しかもフマル酸ジエステルの濃度が例えば60モル%以
上の高い濃度で重合することが望ましい.
本発明において、前記一般式(目で表わされるフマル酸
ジエステルの反復単位を含む薄膜を調製するには、前記
フマル酸ジエステル重合体を例えば溶媒キャスト法,水
面展開法,スピンコート法等により行なうことができ,
得られる薄膜をそのまま分離膜として用いることもでき
るが,更に目的に応じて、機械的強度を増強するために
例えば,ボリスルホン、ポリエーテルスルホン,セルロ
ース,ポリテトラフルオロエチレン等の強度を有する素
材によって得られる支持膜上に前記薄膜を形威し、複合
化することも可能である.また気体透過速度の点から該
支持膜は,例えばポリアクリロニトリル、ポリスルホン
、ボリアミド、ポリイミド、ボリフッ化ビニリデン,ポ
リプロピレン、ポリカーボネート塩化ビニルーアクリロ
ニトリル共重合体,セルロース誘導体等により形或され
る多孔質有機高分子膜を用いるのが好ましく更には市販
の限外濾過膜等の多孔質有機高分子膜を用いることもで
きる.
一方、前記多孔質有機高分子膜の表面が粗雑で,しかも
孔の大きさもかなり大きい場合には、一旦ポリブタジエ
ンあるいはポリジメチルシロキサン等の高気体透過性の
高分子薄膜を、水面展開法等により多孔質有機高分子膜
上に1〜3層程度積層して、表酊を比較的平滑にした後
、前記薄膜を複合化するのが好ましい.この際,ポリフ
マレート膜の膜厚は100〜5000人であるのが望ま
しい。Examples of the fumaric acid diester having a structural unit represented by the general formula (I) include diisobutyl fumarate, di-tert-butyl fumarate, dicyclohexyl fumarate, di-sea monobutyl fumarate, and di-tert-butyl fumarate.
-Methyl-2-pentyl, isoprobyl fumarate
rt-butyl, isopropyl-isoamyl fumarate, isopropyl-4-methyl-2-pentyl fumarate, isopropyl-2-ethylhexyl fumarate, isopropynonyl fumarate, fumarfil-tert-butyl-sec-butyl, fumaric acid -tert-butylisoamyl, monotert-butyl-4-methyl-2-fumarate
Fumaric acid diesters with hydrocarbon groups such as pentyl, fumaric acid mono-tert-butyl-2-ethylhexyl, methyl-(trimethylsilyl) mono-fumarate, ethyl-(
trimethylsilyl) monofumarate, isoprobyl (trimethylsilyl) monofumarate, cyclohexyl(trimethylsilyl) monofumarate, tert-butyl(trimethylsilyl) monofumarate, isoprovil [3-tris(trimethylsiloxy)silyl]provir fumarate, isoprobyl- Fumaric acid diesters having a siloxane hydrocarbon group such as 3-[(pentamethyl)disiloxanyl]propylphumarate, N,N-dimethylaminoethyl-isoprobyl fumarate, tert-butyl-1-butoxy-2-probyl fumarate fumaric acid diesters with heteroatoms such as 2-cyanoethyl-isoprobyl fumarate, glycidy-isoprobyl fumarate, diethylphosphonomethyl-isopropylphumarate, 2-methylthioethyl-isoprobyl fumarate, perfluorooctyl ethyl Ru-isopropyl fumarate, trifluoromethyl-isobrobyl fumarate,
Pentafluoroethyl isoprobyl fumarate, hexafluoroisopropyl isoprobyl fumarate, 1
Examples include fumaric acid diesters having a halogen-substituted hydrocarbon group such as -chloropropyl-isopropyl fumarate. In the present invention, the general formula (I)
In order to produce a fumaric acid diester polymer having a repeating unit of fumaric acid diester represented by, fumaric acid diesters can be synthesized by a conventional radical polymerization method. As the polymerization initiator used in the polymerization, one or more of organic peroxides and azo compounds having a selected 10-hour half-life temperature of 120° C. or less can be used. Specifically, for example, benzoyl peroxide, diisopropylberoxycarbonate, tart-butylperoxy-2-ethylhexanoate, tart-butylperoxypiparate, tart-butylperoxydiisobutyrate, lauroyl peroxide, azobis Examples include isobutyronitrile. The amount of the polymerization initiator used is preferably 10 parts by weight or less, more preferably 5 parts by weight or less, based on 100 parts by weight of the raw material monomer. Mata II
I performance, especially mechanical strength, l! From the viewpoint of membrane properties, gas permeability, etc., the molecular weight of the fumaric acid diester polymer used is preferably higher, and is preferably 10,000 to 1,000,000. In addition, the polymerization conditions are at a low temperature of about 10 to 60°C,
Moreover, it is desirable that the polymerization be carried out at a high concentration of fumaric acid diester, for example, 60 mol% or more. In the present invention, in order to prepare a thin film containing the repeating unit of fumaric acid diester represented by the general formula (visual), the fumaric acid diester polymer is coated with the fumaric acid diester polymer by, for example, a solvent casting method, a water surface spreading method, a spin coating method, etc. can be done,
The obtained thin membrane can be used as it is as a separation membrane, but depending on the purpose, it may be made of a strong material such as boris sulfone, polyether sulfone, cellulose, polytetrafluoroethylene, etc., to increase its mechanical strength. It is also possible to form a composite film by applying the thin film on a support film that can be used. In addition, from the viewpoint of gas permeation rate, the support membrane is made of a porous organic polymer formed of, for example, polyacrylonitrile, polysulfone, polyamide, polyimide, polyvinylidene fluoride, polypropylene, polycarbonate vinyl chloride-acrylonitrile copolymer, cellulose derivative, etc. It is preferable to use a membrane, and it is also possible to use a commercially available porous organic polymer membrane such as an ultrafiltration membrane. On the other hand, if the surface of the porous organic polymer membrane is rough and the pores are quite large, a highly gas-permeable polymer thin membrane such as polybutadiene or polydimethylsiloxane is first prepared using a water surface development method or the like. It is preferable to laminate one to three layers on a high-quality organic polymer film to make the surface relatively smooth, and then form the thin film into a composite. At this time, the thickness of the polyfumarate film is preferably 100 to 5,000.
本発明において、前記フマル酸ジエステルの反復単位を
含む薄膜上に蒸着する金属フタ口シアニン誘導体として
は,例えば下記一般式(II)又は(m)で表わされる
化合物を好ましく挙げることができる.
式中Rは、特に限定されるものではないが、例えば水素
原子、炭素数1〜22のアルキル基、炭素数4〜10の
シクロアルキル基、アリール基,炭素数1〜22のアル
コキシル基,炭素数4〜1oのシクロアルコキシル基、
ポリアルキレングリコール基、ヒドロキシル基、カルボ
キシル基、アミノ基、アルキルアミノ基等を好ましく挙
げることができ、nは0又は1を示す.またMは中心金
属であって,分離する気体の種類により種々選択するこ
とができる。具体的には、例えば酸素と窒素の分離,い
わゆる酸素富化膜、あるいは窒素富化膜を作成する場合
には,酸素又は窒素のいずれかと親和性を有する例えば
、酸素との親和性を有するケイ素,鉄、銅、亜鉛、ニッ
ケル、コバルト、パナジウム等の金属を好ましく挙げる
ことができ、特に、気体透過性を低下させずに選択性の
みを高くするには、ケイ素を用いるのが最も望ましい.
前記金属フタロシアニン誘導体としては、例えばビス〔
トリ(n−プロビル)シロキシ〕フタ口シアネートシリ
コン、ビス〔トリ(イソブロビル)シロキシ〕フタロシ
アネートシリコン、ビス〔トリ(n−ブチル)シロキシ
〕フタ口シアネートシリコン、ビス〔トリ(メチル)シ
ロキシ〕フタ口シアネートシリコン、ビス〔トリ(エチ
ル)シロキシ〕フタ口シアネートシリコン,ビス〔トリ
(see−ブチル)シロキシ〕フタロシアネートシリコ
ン、ビス〔トリ(n−ブチル)シロキシ〕ナフタロシア
ネートシリコン、ビス〔トリ(メチル)シロキシ〕ナフ
タロシアネートシリコン、鉄フタロシアニン、ニッケル
フタロシアニン、銅フタロシアニン、鉄ナフタロシアニ
ン、コバルトフタロシアニン、マグネシウムフタロシア
ニン,亜鉛フタロシアニン、クロムフタロシアニン、コ
バルトナフタロシアニン、マグネシウムナフタロシアニ
ン,亜鉛ナフタロシアニン,クロムナフタロシアニン等
を好ましく挙げることができる。In the present invention, as the metal cap cyanine derivative to be deposited on the thin film containing repeating units of fumaric acid diester, for example, compounds represented by the following general formula (II) or (m) can be preferably mentioned. In the formula, R is not particularly limited, but includes, for example, a hydrogen atom, an alkyl group having 1 to 22 carbon atoms, a cycloalkyl group having 4 to 10 carbon atoms, an aryl group, an alkoxyl group having 1 to 22 carbon atoms, and a carbon atom. cycloalkoxyl group of number 4 to 1o,
Preferred examples include polyalkylene glycol groups, hydroxyl groups, carboxyl groups, amino groups, and alkylamino groups, where n represents 0 or 1. Further, M is a central metal, and can be selected from various types depending on the type of gas to be separated. Specifically, when creating a so-called oxygen-enriched membrane or a nitrogen-enriched membrane for separating oxygen and nitrogen, for example, silicon having an affinity for either oxygen or nitrogen is used. Preferred examples include metals such as iron, copper, zinc, nickel, cobalt, and panadium. In particular, in order to increase selectivity without reducing gas permeability, it is most desirable to use silicon.
Examples of the metal phthalocyanine derivative include bis[
Tri(n-propyl)siloxy] cap cyanate silicone, bis[tri(isobrobyl)siloxy] phthalocyanate silicone, bis[tri(n-butyl)siloxy] cap cyanate silicone, bis[tri(methyl)siloxy] cap cyanate silicone, bis[tri(ethyl)siloxy] cap cyanate silicone, bis[tri(see-butyl)siloxy] phthalocyanate silicone, bis[tri(n-butyl)siloxy] naphthalocyanate silicone, bis[tri(methyl)siloxy] ) Siloxy] naphthalocyanate silicone, iron phthalocyanine, nickel phthalocyanine, copper phthalocyanine, iron naphthalocyanine, cobalt phthalocyanine, magnesium phthalocyanine, zinc phthalocyanine, chromium phthalocyanine, cobalt naphthalocyanine, magnesium naphthalocyanine, zinc naphthalocyanine, chromium naphthalocyanine, etc. It can be mentioned preferably.
本発明において,前記金属フタ口シアニン誘導体を、フ
マル酸ジエステルの反復単位を含むarf4上に蒸着さ
せて、本発明の高選択性気体分離複合膜を製造するには
、イオンスパッタ装置、プラズマ処理装置等の反応器を
用いて、公知の例えば真空蒸着法等により行うことがで
きる。次に第1図を参照して真空蒸着法の好ましい例を
具体的に説明する.第1図において,1は反応器であっ
て、まず反応器l内の試料台2にフマル酸ジエステルの
反復単位を含む薄膜3を設置し、また加熱炉4の上側中
央部に設けられた凹部に、金属フタロシアニン誘導体5
を投入した後,ロータリーポンプ又は油拡散ポンプ等の
ポンプ6により、反応器1内を高真空にする。次いで電
極7に電流を通し、加熱炉4を加熱して金属フタ口シア
ニン誘導体5を蒸気化する。蒸気化する際の条件は、金
属フタロシアニン誘導体の融点に応じて,加熱温度を、
また得られる膜の欠陥及び膜の生成速度の関係により、
蒸気化させる速度を適宜決定することができるが、好ま
しくは加熱温度100〜500℃,蒸気化速度0.5〜
1 0 0 0mg/hrであるのが望ましい。蒸気化
された金属フタロシアニン誘導体は、反応器1内の両側
面に沿って設けられたカバー8により指示されながら薄
膜3の表面に到達し、金属フタ口シアニン誘導体から或
る機能性膜を薄膜3上に形成することができ、従って本
発明の高選択性気体分離複合Jllを得ることができる
.前記機能性膜の膜厚は、気体透過速度及び強度との関
係で目的に応じて選択することができるが,好ましくは
100〜1000人,特に好ましくは20〜100λの
範囲であるのが望ましい。In the present invention, in order to produce the highly selective gas separation composite membrane of the present invention by depositing the metal cap cyanine derivative on ARF4 containing a repeating unit of fumaric acid diester, an ion sputtering device, a plasma processing device, etc. This can be carried out by a known method such as a vacuum evaporation method using a reactor such as the above. Next, a preferred example of the vacuum evaporation method will be specifically explained with reference to FIG. In FIG. 1, reference numeral 1 denotes a reactor. First, a thin film 3 containing repeating units of fumaric acid diester was placed on a sample stage 2 inside the reactor 1, and a recess provided in the upper center of a heating furnace 4 was placed. , metal phthalocyanine derivative 5
After charging the reactor 1, the interior of the reactor 1 is brought to a high vacuum using a pump 6 such as a rotary pump or an oil diffusion pump. Next, an electric current is passed through the electrode 7 to heat the heating furnace 4 and vaporize the metal lid cyanine derivative 5. The conditions for vaporization vary depending on the melting point of the metal phthalocyanine derivative.
Also, due to the relationship between the defects in the film obtained and the film formation rate,
The rate of vaporization can be determined as appropriate, but preferably the heating temperature is 100-500°C and the vaporization rate is 0.5-500°C.
It is desirable that it be 1000 mg/hr. The vaporized metal phthalocyanine derivative reaches the surface of the thin film 3 while being directed by the covers 8 provided along both sides of the reactor 1, and transfers a certain functional film from the metal lid cyanine derivative to the thin film 3. The highly selective gas separation composite Jll of the present invention can therefore be obtained. The thickness of the functional membrane can be selected depending on the purpose in relation to gas permeation rate and strength, but it is preferably in the range of 100 to 1000, particularly preferably in the range of 20 to 100.
〈発明の効果〉
本発明の高選択性気体分ll複合膜はフマル酸ジエステ
ルの反復単位を含む薄膜を有するので、成膜性に優れ、
酸素透過係数も非常に高くすることができる.更に本発
明の複合膜では,前記薄膜上に金属フタ口シアニン誘導
体を蒸着してなる機能性膜を有するので、特に酸素と窒
素との透過係数比α(PG2/PI−)の値が4以上の
優れた気体選択性を有している。<Effects of the Invention> Since the highly selective gas component II composite membrane of the present invention has a thin film containing repeating units of fumaric acid diester, it has excellent film formability,
The oxygen permeability coefficient can also be made very high. Furthermore, since the composite film of the present invention has a functional film formed by vapor-depositing a metal capped cyanine derivative on the thin film, the value of the oxygen to nitrogen permeability coefficient ratio α (PG2/PI-) is 4 or more. It has excellent gas selectivity.
〈実施例〉
以下本発明を、実施例、参考例により更に詳細に説明す
るが本発明はこれらに限定されるものではない。<Examples> The present invention will be explained in more detail below using Examples and Reference Examples, but the present invention is not limited thereto.
豊[1生L
ジイソブ口ピルフマレートをガラスアンプル中にlog
とり、ラジカル重合開始剤として,アゾビスイソブチロ
ニトリルを0.1g添加し、次にアンプル内を窒素置換
および脱気をくり返した後密封し、40℃で48時間塊
状重合を行なった.重合後内容物をベンゼンに溶解し、
大量のメタノールに投入してボリマーを沈殿させ、濾別
し十分メタノール洗浄を行なった後、減圧乾燥して,分
子量235000のポリ(ジイソプロビルフマレート)
(以下PDIPFと略す)を得た.失直旌よ
最初に多孔質支持膜として、ポリプロピレンの多孔質膜
にポリブタジエンの水面展開膜を3層累積して表面を平
滑にした多孔質ポリブロビレン支持膜を!1IIL,た
.
すなわちポリ(シスー1,4−ブタジエン)5wt%の
シクロヘキサン溶液を清浄な水面上に静かに滴下して水
面展開膜を作成し,次いで平滑なガラス板に貼り付けた
多孔質ポリプロピレン膜を静かに水面展開膜に押し付け
て多孔質ポリプロピレン膜上に水面展開膜を3層累積さ
せて表面を平滑にした.次に参考例1で調製したPDi
PF5tgt%のトルエン溶液を前記と同様な方法で水
面展開して薄膜を゜作成し,前記多孔質膜上に、該薄膜
を101累積させて支持膜を有する重合体膜を調製した
.得られた重合体膜を十分乾燥して完全にトルエンを蒸
発させた後、真空蒸着装置に入れ十分減圧して10−”
cnHg以下となったところで、ビス〔トリ(n−プロ
ビル)シロキシ〕フタ口シアネートシリコン(■)(以
下Pc (Si)と略す)を加熱して分子状の蒸気を発
生させ、重合体膜上に均一な膜厚60λになるように金
属フタロシアニン膜を推積させ高選択性気体分離複合膜
を作威した.得られた複合膜の気体選択透過速度を酸素
及び窒素について高真空法で測定したところ、透過速度
(QO.)= 3.5 X 1 0−’. QN.=
7.6 X10″″@aJ (STP)/aJ−sec
・cs+Hg(25℃)であった,蒸着の条件及び気体
透過性の結果を表1に示す.
去104亀
実施例1と同様にして得られたボリプロビレン多孔質膜
を処理した膜上に、PDiPFの代わりにポリ(フマル
酸ジーt−ブチル)(以下PDtBFと略す)4vt%
のトルエン溶液を水面展開して得られる薄膜を10WI
累積させ、さらにPc(Si)を真空蒸着して重合体膜
を作製した.次いで実施例1と同様に行ない、複合膜を
作製し、複合膜の気体透過性を測定した.蒸着の条件及
び気体透過性の結果を表1に示す.
失産園主二上主
実施例2で用いたPDtBFの代わりに実施例3ではポ
リ(フマル酸ジシクロヘキシル)(以下P D c H
Fと略す)を、実施例4ではポリ(フマル酸ジー11
eQ−ブチル)(以下PDsl3Fと略す)を、実施例
5ではポリ(フマル酸ジー4−メチル−2−ペンチル)
(以下PDMPFと略す)を,実施例6ではポリ(フマ
ル酸tert−ブチルーsea−ブチル)(以下P t
B / s B Fと略す)を、実施例7ではポリ(
フマル酸tert一ブチルーイソアミル)(以下P t
B / i A m Fと略す)を、実施例8ではポ
リ(フマル酸tart一ブチルー4−メチル−2−ペン
チル)(以下PtB/MPFと略す)を,実施例9では
ポリ(フマル酸tert−ブチルー2−エチルーヘキシ
ル)(以下PtB/EHFと略す)を、実施例10では
ポリ(フマル酸イソプロピルーパーフルオロオクチルエ
チル)(以下P i P / Fエ,Fと略す)を,実
施例11ではポリ(フマル酸イソプロピルーヘキサフル
オロイソプロビル)(以下PiP/iP−F,Fと略す
)を、実施例12ではポリ(フマル酸−1−クロロプ口
ピルーイソブ口ピル)(以下PDCliPFと略す)を
、実施例l3ではポリ(N,N−ジメチルアミノエチル
ーイソプ口ピルフマレート)(以下PAE/iPFと略
す)を、実施例14ではポリ(I−ブトキシ−2−プロ
ピルーtert−プチルフマレート)(以下pnptB
Fと略す)を、実施例15ではポリ(イソプロビルー〔
3−トリス(トリメチルシロキシ)シリル〕プロビルフ
マレート)(以下P S i / i PFと略す)を
、実施例16〜19ではポリ(フマル酸ジーt−ブチル
)(以下PDtBFと略す)を用い、更に表1に示す膜
の累積数、条件及び金属フタ口シアニン誘導体を用いた
以外は実施例2と同様に複合膜を!11製した。次に得
られた複合膜について気体透過性を測定した。その結果
及び条表
1
ビス[トリ(メチル)シロキシ]ナフタ口シアネートシ
リコン鉄フタロシアニン
ニッケルフタロシアニン
銅フタロシアニン
鉄ナフタロシアニンToyo [1 raw L diisobutylphumarate in a glass ampoule log]
Then, 0.1 g of azobisisobutyronitrile was added as a radical polymerization initiator, and the inside of the ampoule was repeatedly purged with nitrogen and degassed, then sealed, and bulk polymerization was carried out at 40°C for 48 hours. After polymerization, the contents are dissolved in benzene,
The polymer was poured into a large amount of methanol to precipitate, separated by filtration, thoroughly washed with methanol, and dried under reduced pressure to obtain poly(diisoprobyl fumarate) with a molecular weight of 235,000.
(hereinafter abbreviated as PDIPF) was obtained. First of all, the porous support membrane is a porous polypropylene support membrane made by stacking three layers of polybutadiene water surface spreading membrane on a polypropylene porous membrane to make the surface smooth! 1IIL, T. That is, a cyclohexane solution containing 5 wt% poly(cis-1,4-butadiene) was gently dropped onto a clean water surface to create a water surface spreading film, and then a porous polypropylene film attached to a smooth glass plate was gently dropped onto the water surface. The surface was smoothed by stacking three layers of water surface spreading membrane on the porous polypropylene membrane by pressing it against the developing membrane. Next, PDi prepared in Reference Example 1
A thin film was prepared by spreading a toluene solution containing 5 tgt% PF on the water surface in the same manner as described above, and 101 layers of the thin film were accumulated on the porous membrane to prepare a polymer membrane having a support membrane. After thoroughly drying the obtained polymer film to completely evaporate the toluene, it was placed in a vacuum evaporator and the pressure was sufficiently reduced to 10"
When the temperature is below cnHg, bis[tri(n-propyl)siloxy] cyanate silicone (■) (hereinafter abbreviated as Pc (Si)) is heated to generate molecular vapor, which is then deposited on the polymer film. A highly selective gas separation composite membrane was created by depositing a metal phthalocyanine membrane to a uniform thickness of 60λ. When the gas selective permeation rate of the obtained composite membrane was measured using a high vacuum method for oxygen and nitrogen, the permeation rate (QO.) = 3.5 x 1 0-'. QN. =
7.6 X10″″@aJ (STP)/aJ-sec
・Table 1 shows the vapor deposition conditions and gas permeability results, which were cs+Hg (25°C). 4vt% of poly(di-t-butyl fumarate) (hereinafter abbreviated as PDtBF) was added instead of PDiPF on the polypropylene porous membrane obtained in the same manner as in Example 1.
The thin film obtained by developing the toluene solution on the water surface was 10WI
A polymer film was produced by accumulating and further vacuum-depositing Pc(Si). Next, a composite membrane was prepared in the same manner as in Example 1, and the gas permeability of the composite membrane was measured. Table 1 shows the deposition conditions and gas permeability results. In Example 3, instead of PDtBF used in Example 2, poly(dicyclohexyl fumarate) (hereinafter referred to as P D c H
In Example 4, poly(fumaric acid di-11
In Example 5, poly(di-4-methyl-2-pentyl fumarate)
In Example 6, poly(tert-butyl-sea-butyl fumarate) (hereinafter referred to as PDMPF) was used.
In Example 7, poly(
tert-butylisoamyl fumarate) (hereinafter P t
In Example 8, poly(tart-butyl-4-methyl-2-pentyl fumarate) (hereinafter abbreviated as PtB/MPF) was used, and in Example 9, poly(tert-fumarate) was used. butyl-2-ethylhexyl) (hereinafter abbreviated as PtB/EHF), in Example 10 poly(isopropyl-perfluorooctylethyl fumarate) (hereinafter abbreviated as P i P / F, F), and in Example 11 Poly(isopropyl fumarate-hexafluoroisoprobyl) (hereinafter abbreviated as PiP/iP-F,F), and in Example 12, poly(isopropyl fumarate-1-chloropropyl-isobutyl fumarate) (hereinafter abbreviated as PDCliPF), In Example 13, poly(N,N-dimethylaminoethylisopropyl fumarate) (hereinafter abbreviated as PAE/iPF) was used, and in Example 14, poly(I-butoxy-2-propyl-tert-butyl fumarate) (hereinafter pnptB) was used.
In Example 15, poly(isoprobyl-[
In Examples 16 to 19, poly(di-t-butyl fumarate) (hereinafter abbreviated as PDtBF) was used. Furthermore, a composite membrane was prepared in the same manner as in Example 2, except that the cumulative number of membranes, conditions, and metal capped cyanine derivatives shown in Table 1 were used! 11 was made. Next, the gas permeability of the obtained composite membrane was measured. Results and Table 1 Bis[tri(methyl)siloxy]naphthalocyanate silicon iron phthalocyanine nickel phthalocyanine copper phthalocyanine iron naphthalocyanine
第1図は真空蒸着法に用いる反応器の略示断面図である
。
1・・反応器、3・・薄膜、5・・金属フタ口シアニン
誘導体。FIG. 1 is a schematic cross-sectional view of a reactor used in the vacuum evaporation method. 1. Reactor, 3. Thin film, 5. Metal lid cyanine derivative.
Claims (1)
って、R_1及びR_2の少なくとも一方の基は炭素数
3〜12の分枝アルキル基、炭素数3〜12のシクロア
ルキル基、炭素数3〜14の環構造の置換基を有する炭
素数2〜6の置換アルキル基、前記環構造の置換基を有
する炭素数3〜10の置換シクロアルキル基又はシロキ
サン系炭化水素基を表わし、前記各々の基にはヘテロ原
子が含まれていても良く、またハロゲン原子で置換され
ていても良い)で示されるフマル酸ジエステルの反復単
位を含む薄膜上に、金属フタロシアニン又はナフタロシ
アニン誘導体を蒸着してなる機能性膜を有する高選択性
気体分離複合膜。[Claims] The following general formula (I) ▲There are mathematical formulas, chemical formulas, tables, etc.▼... (I) (In the formula, R_1 and R_2 are the same or different groups, and at least one of R_1 and R_2 The group is a branched alkyl group having 3 to 12 carbon atoms, a cycloalkyl group having 3 to 12 carbon atoms, a substituted alkyl group having 2 to 6 carbon atoms having a substituent having a ring structure having 3 to 14 carbon atoms, and the above ring structure. represents a substituted cycloalkyl group or siloxane hydrocarbon group having 3 to 10 carbon atoms, each of which may contain a hetero atom or be substituted with a halogen atom. ) A highly selective gas separation composite membrane having a functional membrane formed by depositing a metal phthalocyanine or a naphthalocyanine derivative on a thin membrane containing a repeating unit of a fumaric acid diester represented by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15730689A JPH0321332A (en) | 1989-06-20 | 1989-06-20 | Highly selective gas separation composite membrane |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15730689A JPH0321332A (en) | 1989-06-20 | 1989-06-20 | Highly selective gas separation composite membrane |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0321332A true JPH0321332A (en) | 1991-01-30 |
Family
ID=15646786
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15730689A Pending JPH0321332A (en) | 1989-06-20 | 1989-06-20 | Highly selective gas separation composite membrane |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0321332A (en) |
-
1989
- 1989-06-20 JP JP15730689A patent/JPH0321332A/en active Pending
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