JPH03214102A - Optical coupler - Google Patents

Optical coupler

Info

Publication number
JPH03214102A
JPH03214102A JP2009633A JP963390A JPH03214102A JP H03214102 A JPH03214102 A JP H03214102A JP 2009633 A JP2009633 A JP 2009633A JP 963390 A JP963390 A JP 963390A JP H03214102 A JPH03214102 A JP H03214102A
Authority
JP
Japan
Prior art keywords
light
prism
optical
laser
incident surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009633A
Other languages
Japanese (ja)
Other versions
JP2998162B2 (en
Inventor
Osamu Matsuda
修 松田
Tadashi Taniguchi
正 谷口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2009633A priority Critical patent/JP2998162B2/en
Publication of JPH03214102A publication Critical patent/JPH03214102A/en
Application granted granted Critical
Publication of JP2998162B2 publication Critical patent/JP2998162B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Optical Elements Other Than Lenses (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Optical Head (AREA)

Abstract

PURPOSE:To decrease the generation of noise by the return light to a laser by confining the reflectivity of the light incident surface of a prism to <=25%. CONSTITUTION:The light generated from a semiconductor laser diode LD is reflected by the light incident surface 2a of the prism 2 and an optical disk 5 having bit information is irradiated with this light via a lens system 4. The reflected light modulated according to this information is introduced from the light incident surface 2a of the prism 2 into the prism 2 and is introduced to plural sets of photodiodes PDs on an optical IC substrate 1. The reflectivity of the light incident surface 2a of the prism 2 as an optical coupler is confined to <=25%. The noise is decreased in this way, i.e. the S/N is improved.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、例えば光集積回路に対するレーザー光の光カ
プラー例えばレーザー光によって、光ディスクいわゆる
レーザーディスク、コンパクトディスク上の記録を読み
出す光ピツクアップ等に用いられる光カプラーに係わる
[Detailed Description of the Invention] [Industrial Application Field] The present invention is an optical coupler for a laser beam for an optical integrated circuit, for example, and is used in an optical pickup for reading out recordings on an optical disk, a so-called laser disk, a compact disk, etc. using a laser beam, for example. Related to optical couplers.

〔発明の概要〕[Summary of the invention]

本発明は、特にプリズムによるレーザー光の光カプラー
において、そのプリズムの光入射面の反射率を25%以
下とすることによって顕著にレーザーに対する戻り光に
よるノイズの発生の低減化をはかる。
In particular, in an optical coupler for laser light using a prism, the present invention significantly reduces noise generation due to return light to the laser by setting the reflectance of the light incident surface of the prism to 25% or less.

[従来の技術] 光ディスク、例えばいわゆるコンパクトディスク、レー
ザディスク上の記録されたビット情報を、レーザー光照
射によって読み出す光ピツクアップとしては、例えば第
1図にその構成図を示すように、光集積回路(光IC)
を存する光IC基板(+)上に、この光IC基板(1)
に形成されたフォトダイオードPDと所要の位置関係を
保持して光カプラーを構成するプリズム(2)がマウン
トされる。また、この光IC基板(1)上には、半導体
子ノブ(3)がマウントされる。この半導体チップ(3
)には、半導体レーザーLDが取着され、更にこれより
の例えば後方に向う光を検出してレーザーLDのパワー
制御を行う例えばPIN構造によるパワーモニター用の
フォトダイオードPD、が形成されて成る。
[Prior Art] As an optical pickup for reading bit information recorded on an optical disk, such as a so-called compact disk or a laser disk, by irradiating a laser beam, an optical integrated circuit ( optical IC)
This optical IC board (1) is placed on the optical IC board (+) containing
A prism (2) constituting an optical coupler is mounted while maintaining a required positional relationship with the photodiode PD formed in the photodiode PD. Furthermore, a semiconductor knob (3) is mounted on this optical IC board (1). This semiconductor chip (3
) is attached with a semiconductor laser LD, and is further formed with a power monitoring photodiode PD having, for example, a PIN structure, which detects light directed backward from the laser LD and controls the power of the laser LD.

半導体レーザーダイオードLDから発生させた光は、プ
リズム(1)の光入射面(2a)で反射させてレンズ系
(4)を介して、ビット情報を存する光ディスり(5)
に照射させ、この情報に応じて変調された光をプリズム
(2)の光入射面(2a)からプリズム(2)内に導入
し、光IC基板(1)上の複数組のフォトダイオードP
Dに導入、すなわちカップリングさせ、これによって、
記録情報変調されたレーザ光を検出して信号の読み出し
を行うと共に、トラッキングサーボ信号、フォーカスサ
ーボ信号等のサーボ信号をとり出すようになされている
The light generated from the semiconductor laser diode LD is reflected by the light incident surface (2a) of the prism (1) and passed through the lens system (4) to the optical disc (5) containing bit information.
The light modulated according to this information is introduced into the prism (2) from the light incidence surface (2a) of the prism (2), and the plurality of sets of photodiodes P on the optical IC board (1) are
Introduce or couple to D, thereby
The recording information modulated laser beam is detected to read signals, and servo signals such as tracking servo signals and focus servo signals are extracted.

この場合、光カプラーとしてのプリズム(2)は、その
入射面(2a)、すなわち所要の角度を有する斜面にハ
ーフミラ−の機能を持たしめて、半導体レーザーLDか
らのレーザー光を、光ディスク(5)にてできるだけ効
率良く反射させて向わしめると共に、光ディスク(5)
から反射して到来する光に関しては効率良くフォトダイ
オードPDに向わしめるべくプリズム(2)内に導入さ
せることが必要となる。
In this case, the prism (2) as an optical coupler has a half-mirror function on its entrance surface (2a), that is, an inclined surface having a required angle, and directs the laser light from the semiconductor laser LD to the optical disk (5). The optical disc (5)
It is necessary to introduce the light reflected from the prism (2) into the prism (2) in order to efficiently direct it to the photodiode PD.

そこで両機能を勘案して、光吸収を考慮しない状態で、
この入射面(2a)の反射率R3は50%程度に選定し
ている。すなわちプリズム(2)の入射面(2a)にお
ける反射率R3と、半導体レーザーLDへの戻り光量S
、と、光ディスク(5)からの反射光のフォトダイオー
ドPDへの光、すなわち信号光量Soについてみると、 となることから、反射率R3と各光量における比S(%
)は、第3図中曲線(31)及び(32)に示すように
なる。そして、従来一般には、その信号光量S0が最大
となるように原理的にはR+=50%としている。した
がって、この場合戻り光Sfは理論的には25%にも及
ぶものである。そこで通常この種の光カプラーを用いた
半導体レーザーLDにおいては、この戻り光によるノイ
ズへの影響が一般に小さい利得ガイド型のレーザー、す
なわち多モード発振による可干渉性の小さいレーザーが
用いられている。ところが昨今、例えば上述の光ピツク
アップにおける、より小型、軽量化に伴ってレーザーL
Dから出射したレーザー光の外部共振器長、すなわち光
路長L extが短縮化され、L !Xtが20mm程
度となると、レーザーLDへの戻り先によるノイズが無
視し得ないものとなって来た。
Therefore, taking both functions into consideration and not considering light absorption,
The reflectance R3 of this entrance surface (2a) is selected to be approximately 50%. That is, the reflectance R3 at the entrance surface (2a) of the prism (2) and the amount of light S returning to the semiconductor laser LD.
, and the light reflected from the optical disk (5) to the photodiode PD, that is, the signal light amount So, is as follows. Therefore, the ratio S (%) of the reflectance R3 and each light amount is
) are as shown in curves (31) and (32) in FIG. Conventionally, R+ is generally set to 50% in principle so that the signal light amount S0 is maximized. Therefore, in this case, the return light Sf theoretically reaches as much as 25%. Therefore, in a semiconductor laser LD using this type of optical coupler, a gain guide type laser is generally used in which the influence of the returned light on noise is small, that is, a laser with low coherence due to multimode oscillation is used. However, in recent years, laser L pickups have become smaller and lighter, for example in the optical pickups mentioned above.
The external cavity length, that is, the optical path length L ext of the laser beam emitted from D is shortened, and L ! When Xt becomes about 20 mm, noise due to the return destination to the laser LD becomes impossible to ignore.

すなわち、第2図にその光路長、つまり、レーザーの外
部共振器長り、8.とS/Nの関係を示すところから明
らかなように、L IIXLが20mmとなってくると
、そのノイズが著しく大となりS/Nが低下する。この
場合のノイズの谷(最悪値)の間隔は光学的キャビティ
(共振器)長lの、!=N、n’L (但し、Lはレー
ザーの共振器長、n“は有効屈折率、Nは整数)となる
That is, FIG. 2 shows the optical path length, that is, the external cavity length of the laser, 8. As is clear from the relationship between and S/N, when L IIXL becomes 20 mm, the noise becomes significantly large and the S/N decreases. In this case, the interval between the noise valleys (worst value) is the length of the optical cavity (resonator) l! =N, n'L (where L is the resonator length of the laser, n'' is the effective refractive index, and N is an integer).

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

本発明は、上述したプリズムによるレーザー光に対する
光カプラーにおいて、その光路長の短縮によって生ずる
戻り光によるノイズの発生、カプラーとしての感度、す
なわち結合効率の低下を抑制して得ることができるよう
にする。
The present invention makes it possible to obtain an optical coupler for laser light using the above-mentioned prism while suppressing noise generation due to return light caused by shortening of the optical path length and reduction in sensitivity as a coupler, that is, reduction in coupling efficiency. .

〔課題を解決するための手段〕[Means to solve the problem]

本発明は、第1図に示すように、プリズム(2)による
レーザー光の光カプラーにおいて、そのプリズム(2)
の光入射面(2a)の反射率を25%以下に選定する。
As shown in FIG. 1, the present invention provides an optical coupler for laser light using a prism (2).
The reflectance of the light incident surface (2a) is selected to be 25% or less.

〔作用〕[Effect]

上述したように、プリズム(2)の光入射面(2a)の
反射率を25%以下にしたことによってノイズの低減化
、すなわち、S/Hの向上がはかられた。
As described above, by setting the reflectance of the light incident surface (2a) of the prism (2) to 25% or less, noise was reduced, that is, S/H was improved.

(実施例〕 第1図を参照して本発明による光カプラーを用いて、光
ピツクアップに適用する場合について説明する。
(Example) A case in which the optical coupler according to the present invention is applied to optical pickup will be described with reference to FIG.

すなわちこの場合、前述したように、光集積回路(光I
C)を有する光IC基板(1)上に、この光IC基板(
1)に形成されたフォトダイオードPDと所要の位置関
係を保持して光カプラーを構成するプリズム(2)がマ
ウントされる。また、この光IC基板(1)上には、半
導体チップ(3)がマウントされる。
That is, in this case, as mentioned above, an optical integrated circuit (optical I
This optical IC board (1) is placed on the optical IC board (1) having a
A prism (2) constituting an optical coupler is mounted while maintaining a required positional relationship with the photodiode PD formed in (1). Further, a semiconductor chip (3) is mounted on this optical IC substrate (1).

この半導体チップ(3)上には、半導体レーザーLDが
取着され、また、半導体チップ(3)には、半導体レー
ザーLDよりの光のその例えば後方に向う光を検出して
レーザーLDのパワー制御を行う例えばPIN構造によ
るパワーモニター用のフォトダイオードPDイが形成さ
れる。半導体レーザダイオードLDから発生させた光は
プリズム(2)の光入射面(2a)で反射させてレンズ
系(4)を介して、ビット情報を有する光ディスク(5
)に照射させ、この情報に応じて変調された反射光をプ
リズム(2)の光入射面(2a)からプリズム(2)内
に導入し、光IC基板(1)上の複数組のフォトダイオ
ードPDに導入、すなわちカップリングさせ、これによ
って、記録情報変調されたレーザ光を検出して信号の読
み出しを行うと共に、トラッキングサーボ信号、フォー
カスサーボ信号等のサーボ信号をとり出すようになされ
ている。
A semiconductor laser LD is mounted on the semiconductor chip (3), and the semiconductor chip (3) detects the light emitted from the semiconductor laser LD, for example, the light directed backward, and controls the power of the laser LD. For example, a photodiode PD for power monitoring with a PIN structure is formed. The light generated from the semiconductor laser diode LD is reflected by the light incident surface (2a) of the prism (2) and is transmitted through the lens system (4) to the optical disc (5) having bit information.
), and the reflected light modulated according to this information is introduced into the prism (2) from the light incident surface (2a) of the prism (2), and the multiple sets of photodiodes on the optical IC board (1) are The laser light is introduced into the PD, that is, coupled to the PD, thereby detecting the recorded information-modulated laser light and reading out the signal, as well as extracting servo signals such as a tracking servo signal and a focus servo signal.

ここに、半導体レーザLDとしては、戻り光に対し、ノ
イズの影響を受けにくい多モード発振を示す例えば利得
ガイド型のいわゆるチーバード・ストライブ型の半導体
レーザーを用いる。
Here, as the semiconductor laser LD, for example, a gain guide type so-called Cheebird stripe type semiconductor laser is used, which exhibits multimode oscillation that is not easily affected by noise with respect to returned light.

この構成において本発明では、その光カプラーとしての
プリズム(2)の光入射面(2a)に、ハーフミラ−と
しての機能を持たしめるに、その反射率R1を25%以
下とする。この光入射面(2a)における反射率R3の
選定は、この面(2a)に、例えばアモルファスStと
、ZrO□との積層膜を例えば5〜6層設け、各膜厚制
御によって行うことができる。
In this configuration, in the present invention, the reflectance R1 is set to 25% or less in order to give the light incidence surface (2a) of the prism (2) as the optical coupler a function as a half mirror. The reflectance R3 on the light incident surface (2a) can be selected by providing, for example, five to six layers of amorphous St and ZrO□ on this surface (2a) and controlling the thickness of each film. .

このようにすると、半導体レーザーLDから出射端面か
らディスク(5)までの光路長いわゆる外部キャビティ
長L0□を、20IIIIIl程度にまで下げても、S
、/Nの低下が生じない。すなわち、今レンズ系(4)
の焦点距離を変えて、L ext = 40mm5 L
 ext ””30III11、■、。−= 20mn
+にしてそれぞれのプリズム(2)の光入射面(2a)
の反射率R,とS、/Nの関係を、各L extにおい
て微小に変化させて、その最悪値として測定した結果を
みると、第4図中曲線(41)。
In this way, even if the optical path length from the emission end face of the semiconductor laser LD to the disk (5), so-called external cavity length L0□, is reduced to about 20IIIIIIl, the S
, /N does not decrease. That is, now the lens system (4)
By changing the focal length of L ext = 40mm5 L
ext ””30III11,■,. −=20mn
+ and the light incidence surface (2a) of each prism (2)
Curve (41) in FIG. 4 shows the results obtained by slightly changing the relationship between the reflectance R, and S, /N at each L ext, and measuring the worst value.

(42)及び(43)で示したように、R,≦25%で
は、いずれもS、/Nの低下がみられない。つまりL 
extが長い場合に比し何ら遜色が生じいない。
As shown in (42) and (43), no decrease in S and /N is observed when R is ≦25%. In other words, L
There is no inferiority compared to the case where ext is long.

尚、上述した例では、本発明を光ディスクに対する光ピ
ツクアップに用いた場合であるが、そのほか各種レーザ
ー光のカプラーとして用いることができる。
In the above example, the present invention is used for optical pickup for an optical disc, but it can also be used as a coupler for various laser beams.

〔発明の効果〕〔Effect of the invention〕

本発明による光カプラーによれば、上述したように、例
えば光ピツクアップにおいて、半導体レーザーLDの外
部発振器長L extが20+mmにも及ぶ短い場合に
おいても、L、□が40m+w程度に長い場合と同様に
戻り光によるレーザー発振の不安定性、即ちシンターの
発生が回避され、またS、/Nの低下を抑制することが
できることから、光ピツクアップの、より小型、軽量を
特性の低下を招来することなく構成することができるの
で、携帯用コンパクトディスクのプレーヤ等のピックア
ップに適用してその実用上の利益は極めて大きい。
According to the optical coupler according to the present invention, as described above, even when the external oscillator length L ext of the semiconductor laser LD is as short as 20+mm in optical pickup, for example, the same effect can be obtained when L, □ is as long as about 40m+w. Since the instability of laser oscillation due to returned light, that is, the occurrence of sintering, can be avoided, and the reduction in S and /N can be suppressed, the optical pickup can be made smaller and lighter without deteriorating its characteristics. Therefore, it has extremely great practical benefits when applied to pickups in portable compact disc players and the like.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明による光カプラーを適用する光ピツクア
ップの一例の構成図、第2図は半導体レーザーの外部光
路長とS/Nの関係を示す図、第3図はプリズムの反射
率と信号光量S0及び戻り光量Stの関係を示す図、第
4図はブリ耐重とS、/Nの関係を示す図である。 (2)はプリズム、(2a)はその光入射面、導体レー
ザーである。 ズムの反 LDは半 代 理 人 松 隈 秀 盛
Fig. 1 is a block diagram of an example of an optical pickup to which the optical coupler according to the present invention is applied, Fig. 2 is a diagram showing the relationship between the external optical path length of a semiconductor laser and S/N, and Fig. 3 is a diagram showing the relationship between the reflectance of the prism and the signal. FIG. 4 is a diagram showing the relationship between the amount of light S0 and the amount of returned light St, and FIG. 4 is a diagram showing the relationship between the yellowing resistance and S, /N. (2) is a prism, (2a) is its light incident surface, and is a conductive laser. Zum's anti-LD is half agent Hidemori Matsukuma

Claims (1)

【特許請求の範囲】  プリズムによるレーザー光の光カプラーにおいて、 上記プリズムの光入射面の反射率を25%以下に選定し
て成ることを特徴とする光カプラー。
[Scope of Claims] An optical coupler for laser light using a prism, characterized in that the reflectance of the light incident surface of the prism is selected to be 25% or less.
JP2009633A 1990-01-19 1990-01-19 Optical pickup device Expired - Fee Related JP2998162B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009633A JP2998162B2 (en) 1990-01-19 1990-01-19 Optical pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009633A JP2998162B2 (en) 1990-01-19 1990-01-19 Optical pickup device

Publications (2)

Publication Number Publication Date
JPH03214102A true JPH03214102A (en) 1991-09-19
JP2998162B2 JP2998162B2 (en) 2000-01-11

Family

ID=11725642

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009633A Expired - Fee Related JP2998162B2 (en) 1990-01-19 1990-01-19 Optical pickup device

Country Status (1)

Country Link
JP (1) JP2998162B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0643368A (en) * 1992-01-14 1994-02-18 Matsushita Electric Ind Co Ltd Two-dimension scanner
EP0827140A3 (en) * 1996-08-27 1998-08-12 Nec Corporation Apparatus and method for optical pick-up
US6290134B1 (en) 1994-07-19 2001-09-18 Psc Scanning, Inc. Compact scanner module mountable to pointing instrument
JP2008204510A (en) * 2007-02-16 2008-09-04 Matsushita Electric Ind Co Ltd Light receiving / emitting element and optical pickup device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0643368A (en) * 1992-01-14 1994-02-18 Matsushita Electric Ind Co Ltd Two-dimension scanner
US6290134B1 (en) 1994-07-19 2001-09-18 Psc Scanning, Inc. Compact scanner module mountable to pointing instrument
US6572019B1 (en) 1994-07-19 2003-06-03 Psc Scanning, Inc. Compact scanner module mountable to pointing instrument
EP0827140A3 (en) * 1996-08-27 1998-08-12 Nec Corporation Apparatus and method for optical pick-up
US5956312A (en) * 1996-08-27 1999-09-21 Nec Corporation Pickup apparatus and method for laser beams having different wavelengths
JP2008204510A (en) * 2007-02-16 2008-09-04 Matsushita Electric Ind Co Ltd Light receiving / emitting element and optical pickup device

Also Published As

Publication number Publication date
JP2998162B2 (en) 2000-01-11

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