JPH0321516B2 - - Google Patents
Info
- Publication number
- JPH0321516B2 JPH0321516B2 JP19472682A JP19472682A JPH0321516B2 JP H0321516 B2 JPH0321516 B2 JP H0321516B2 JP 19472682 A JP19472682 A JP 19472682A JP 19472682 A JP19472682 A JP 19472682A JP H0321516 B2 JPH0321516 B2 JP H0321516B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- crystal
- growth
- gases
- compound semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000001947 vapour-phase growth Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 description 15
- 150000004678 hydrides Chemical class 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】
この発明はGaAs、GaAlAs、InP、InGaAsP
等で代表される二種以上の元素から構成される化
合物半導体結晶の気相成長装置に関する。[Detailed Description of the Invention] This invention applies to GaAs, GaAlAs, InP, InGaAsP.
The present invention relates to a vapor phase growth apparatus for compound semiconductor crystals composed of two or more types of elements represented by the following.
近年、GaAs、GaAlAs、InP、InGaAsP等の
−族化合物半導体結晶を気相法により成長さ
せる方法として、Ga（CH3）3、Al（CH3）3、In
（C2H5）3等の族元素のアルキル化物と、AsH3、
PH3等の族元素の水素化物とを結晶成長用材料
として用いる気相成長法（以下MO−CVD法と
略記する）が注目されている。 In recent years, Ga(CH 3 ) 3 , Al(CH 3 ) 3 , In
Alkylated products of group elements such as (C 2 H 5 ) 3 and AsH 3 ,
A vapor phase growth method (hereinafter abbreviated as MO-CVD method) that uses a hydride of a group element such as PH 3 as a material for crystal growth is attracting attention.
第１図に従来用いられている横形MO−CVD
装置の概念構成図を示す。図において、１０は成
長炉部で、１１は成長炉、１２はグラフアイトサ
セプタ、１３は基板結晶、１４はグラフアイトサ
セプタ１２を高周波電力により加熱するためのコ
イルである。また、２０は結晶成長用材料供給部
で、PH3、AsH3は常温で気体であり、通常それ
ぞれ高圧ガスシリンダ２１ａ，２１ｂから供給さ
れる。 Figure 1 shows the conventionally used horizontal MO-CVD
A conceptual configuration diagram of the device is shown. In the figure, 10 is a growth furnace section, 11 is a growth furnace, 12 is a graphite susceptor, 13 is a substrate crystal, and 14 is a coil for heating the graphite susceptor 12 with high frequency power. Further, 20 is a crystal growth material supply section, in which PH 3 and AsH 3 are gases at room temperature, and are normally supplied from high pressure gas cylinders 21a and 21b, respectively.
一方、In（C2H5）3、Ga（CH3）3は常温で液体で
あるので、それぞれ容器２２ａ，２２ｂに収容さ
れており、H2等のキヤリヤガスにより気化させ
て供給される。また、この時の蒸気圧を制御する
ために、これらの容器２２ａ，２２ｂはそれぞれ
恒温槽２３ａ，２３ｂ内に収められる。２４はキ
ヤリヤガス供給管である。 On the other hand, since In(C 2 H 5 ) 3 and Ga(CH 3 ) 3 are liquids at room temperature, they are contained in containers 22a and 22b, respectively, and are supplied after being vaporized by a carrier gas such as H 2 . Further, in order to control the vapor pressure at this time, these containers 22a and 22b are placed in constant temperature baths 23a and 23b, respectively. 24 is a carrier gas supply pipe.
これらPH3、AsH3とH2によつて気化されたIn
（C2H5）3、Ga（CH3）3とは雰囲気ガスとしてのH2
と共に結晶成長材料供給部２０において互いに混
合された後、材料ガス供給管２５を経て成長炉部
１０へ供給される。なお、２６は排気管である。 In vaporized by these PH 3 , AsH 3 and H 2
(C 2 H 5 ) 3 and Ga(CH 3 ) 3 refer to H 2 as an atmospheric gas.
After being mixed with each other in the crystal growth material supply section 20, they are supplied to the growth furnace section 10 via the material gas supply pipe 25. Note that 26 is an exhaust pipe.
ところが、上述の従来のMO−CVD装置にお
いては、PH3およびAsH3並びにIn（C2H5）3およ
びGa（CH3）3の結晶成長用材料が結晶成長材料供
給部２０において互いに混合されるので、これら
の気体が成長炉１１内の結晶させるべき基板結晶
１３に到達する迄に互いに反応してしまい、基板
結晶１３上に所望の結晶を成長させる事が容易で
はなかつた。 However, in the conventional MO-CVD apparatus described above, the crystal growth materials of PH 3 and AsH 3 and In(C 2 H 5 ) 3 and Ga(CH 3 ) 3 are mixed with each other in the crystal growth material supply section 20. Therefore, these gases react with each other before reaching the substrate crystal 13 to be crystallized in the growth furnace 11, making it difficult to grow a desired crystal on the substrate crystal 13.
この発明は従来のMO−CVD装置における上
記の欠点を克服するためになされたものであり、
結晶成長用材料を成長炉内の基板結晶直前まで互
いに独立に供給することにより、これら結晶成長
用材料が基板結晶に到達する前に互いに反応して
いまうことを防止し、従つて基板結晶上に所望の
品質の結晶を成長することが出来るようにするこ
とを目的としている。 This invention was made to overcome the above-mentioned drawbacks of conventional MO-CVD equipment,
By feeding the crystal growth materials independently from each other up to just before the substrate crystal in the growth furnace, it is possible to prevent these crystal growth materials from reacting with each other before reaching the substrate crystal, and therefore to prevent the crystal growth materials from reacting with each other before reaching the substrate crystal. The purpose is to grow crystals of desired quality.
第２図にこの発明の一実施例になるMO−
CVD装置の概念構成図を示す。従来例と同一符
号は同等部分を示し説明を省略する。図におい
て、２７は雰囲気ガス専用供給管、２８は族元
素のアルキル化物専用供給管、２９は族元素の
水素化物専用供給管である。第２図に示したよう
に結晶成長用材料供給部２０において、族元素
のアルキル化物専用供給管２８と族元素の水素
化物専用供給管２９とを別個に設けたことによ
り、これらの結晶成長用材料を基板結晶１３の直
前まで互いに独立に供給することができ、従つて
これらの結晶成長用材料が基板結晶１３に到達す
る前に互いに反応してしまうことがなく、従つて
所望の結晶を基板結晶１３上に成長させることが
できる。 Figure 2 shows an MO-- which is an embodiment of this invention.
A conceptual configuration diagram of the CVD device is shown. The same reference numerals as in the conventional example indicate equivalent parts, and the explanation will be omitted. In the figure, 27 is a supply pipe exclusively for atmospheric gas, 28 is a supply pipe exclusively for alkylates of group elements, and 29 is a supply pipe exclusively for hydrides of group elements. As shown in FIG. 2, in the crystal growth material supply section 20, a supply pipe 28 exclusively for group element alkylates and a supply pipe 29 exclusively for group element hydrides are provided separately, so that these The materials can be supplied independently of each other up to just before the substrate crystal 13, and therefore these crystal growth materials will not react with each other before reaching the substrate crystal 13, and therefore the desired crystal can be fed directly to the substrate crystal 13. It can be grown on crystal 13.
第３図はこの発明の他の実施例を示す概念構成
図である。ここでは、族元素のアルキル化物専
用供給管２８と族元素の水素化物専用供給管２
９とは二重管を構成するように配置されている。
この場合には族元素のアルキル化物と族元素
の水素化物とは成長炉１１内でその流れ方向に対
して垂直な断面で互いに均一に混ざり合うので、
基板結晶１３上に成長する結晶がより一層均質に
なることが期待できる。 FIG. 3 is a conceptual diagram showing another embodiment of the present invention. Here, a supply pipe 28 exclusively for group element alkylates and a supply pipe 2 exclusively for group element hydrides are used.
9 are arranged to form a double pipe.
In this case, the alkylated product of the group element and the hydride of the group element are uniformly mixed with each other in the cross section perpendicular to the flow direction in the growth reactor 11.
It can be expected that the crystal grown on the substrate crystal 13 will be more homogeneous.
上記各実施例とも族元素のアルキル化物を２
種および族元素の水素化物を２種同時に供給す
る構成を示したが、これは例えば、InGaAsPの
ような化合物半導体結晶の気相成長の場合を想定
したもので、GaAsまたはInPのような化合物半
導体結晶の場合には図示は省略したが各高圧ガス
シリンダ２１ａ，２１ｂおよび各容器２２ａ，２
２ｂの出口にバルブを設け供給材料気体を適当に
選択すればよい。 In each of the above examples, 2 alkylated compounds of group elements were used.
Although we have shown a configuration in which two species and group element hydrides are supplied at the same time, this is intended for example in the case of vapor phase growth of compound semiconductor crystals such as InGaAsP. Although not shown in the case of crystals, each high pressure gas cylinder 21a, 21b and each container 22a, 2
A valve may be provided at the outlet of 2b to appropriately select the feed material gas.
なお、PH3やAsH3の代わりに（CH3）3P、
（CH3）3Asのようなアルキル化物が用いられるこ
とがあるが、この場合にはこれら族元素のアル
キル化物を族元素のアルキル化物と独立に供給
することにより同様の効果が得られる事はいうま
でもない。 In addition, instead of PH3 or AsH3 , ( CH3 ) 3P ,
Alkylated products such as (CH 3 ) 3 As are sometimes used, but in this case, the same effect cannot be obtained by supplying the alkylated products of these group elements independently from the alkylated products of the group elements. Needless to say.
なお以上の説明では、GaAsやInP等の−
族化合物半導体結晶の場合について示したが、
Zn（C2H5）2、Cd（CH3）2、Hg（CH3）2等の族元
素のアルキル化物およびH2Te等の族元素の水
素化物とを用いてのCdTe、HgCdTeといつた
−族化合物半導体結晶の気相成長の場合にもこ
の発明は適用できる。 In the above explanation, −
Although the case of group compound semiconductor crystals was shown,
When using CdTe, HgCdTe and alkylates of group elements such as Zn(C 2 H 5 ) 2 , Cd(CH 3 ) 2 , Hg(CH 3 ) 2 and hydrides of group elements such as H 2 Te, The present invention can also be applied to the case of vapor phase growth of compound semiconductor crystals.
以上説明したように、この発明になる化合物半
導体結晶成長装置では結晶成長用材料気体を互い
に別個の送給管によつて成長炉に送給し、成長炉
中の基板直前で混合させるようにしたので、品質
のよい成長結晶を効率よく得ることができる。 As explained above, in the compound semiconductor crystal growth apparatus according to the present invention, material gases for crystal growth are fed to the growth furnace through separate feed pipes, and mixed immediately before the substrate in the growth furnace. Therefore, high-quality grown crystals can be obtained efficiently.
第１図は従来の横形MO−CVD装置の一例を
示す概念構成図、第２図はこの発明の一実施例を
示す概念構成図、第３図はこの発明の他の実施例
を示す概念構成図である。
図において、１０は成長炉部、１１は成長炉、
１３は基板、２０は結晶成長用材料供給部、２８
は族元素のアルキル化物専用供給管、２９は
族元素の水素化物専用供給管である。なお、図中
同一符号は同一または相当部分を示す。
FIG. 1 is a conceptual configuration diagram showing an example of a conventional horizontal MO-CVD device, FIG. 2 is a conceptual configuration diagram showing one embodiment of the present invention, and FIG. 3 is a conceptual configuration diagram showing another embodiment of the present invention. It is a diagram. In the figure, 10 is a growth furnace section, 11 is a growth furnace,
13 is a substrate, 20 is a crystal growth material supply unit, 28
Reference numeral 29 indicates a supply pipe exclusively for alkylated group elements, and 29 indicates a supply pipe exclusively for hydrides of group elements. Note that the same reference numerals in the figures indicate the same or corresponding parts.
Claims (1)
上記それぞれの元素が含まれる複数種の気体を成
長炉中で加熱された基板上に供給し、これらの気
体を反応させて上記基板上に成長させる装置にお
いて、上記各気体が上記基板の直前まで反応しな
いように上記各気体を上記成長炉中の上記基板の
直前までは多重管構造を有する互いに独立の供給
管によつて供給するようにしたことを特徴とする
化合物半導体結晶気相成長装置。1 A compound semiconductor crystal made of multiple types of elements,
In an apparatus in which multiple types of gases containing each of the above elements are supplied onto a substrate heated in a growth furnace, and these gases are reacted to grow on the above substrate, each of the above gases reaches just before the above substrate. A compound semiconductor crystal vapor phase growth apparatus characterized in that each of the gases is supplied to the growth furnace immediately before the substrate through mutually independent supply pipes having a multi-tube structure so as not to react.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19472682A JPS5988395A (en) | 1982-11-08 | 1982-11-08 | Apparatus for growing compound semiconductor crystal in vapor phase |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19472682A JPS5988395A (en) | 1982-11-08 | 1982-11-08 | Apparatus for growing compound semiconductor crystal in vapor phase |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5988395A JPS5988395A (en) | 1984-05-22 |
| JPH0321516B2 true JPH0321516B2 (en) | 1991-03-22 |
Family
ID=16329216
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19472682A Granted JPS5988395A (en) | 1982-11-08 | 1982-11-08 | Apparatus for growing compound semiconductor crystal in vapor phase |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5988395A (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6016898A (en) * | 1983-07-08 | 1985-01-28 | Matsushita Electric Ind Co Ltd | Gaseous-phase growth device |
| JPS6163599A (en) * | 1984-09-05 | 1986-04-01 | Matsushita Electric Ind Co Ltd | Vapor phase growth equipment |
| JPS6183700A (en) * | 1984-09-28 | 1986-04-28 | Hitachi Ltd | Vapor phase epitaxial growth method and device |
| JPS6251209A (en) * | 1985-08-30 | 1987-03-05 | Hitachi Ltd | Vapor growth apparatus |
| JPS62291020A (en) * | 1986-06-10 | 1987-12-17 | Matsushita Electric Ind Co Ltd | Vapor growth device |
| JPH0626187B2 (en) * | 1987-04-14 | 1994-04-06 | 三菱電機株式会社 | Semiconductor crystal manufacturing equipment |
| JP2722833B2 (en) * | 1991-03-18 | 1998-03-09 | 富士通株式会社 | Vapor phase epitaxial growth apparatus and vapor phase epitaxial growth method |
| JP5500953B2 (en) * | 2009-11-19 | 2014-05-21 | 株式会社ニューフレアテクノロジー | Film forming apparatus and film forming method |
-
1982
- 1982-11-08 JP JP19472682A patent/JPS5988395A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5988395A (en) | 1984-05-22 |
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