JPH03217224A - Leak mechanism of vacuum vessel - Google Patents
Leak mechanism of vacuum vesselInfo
- Publication number
- JPH03217224A JPH03217224A JP1069790A JP1069790A JPH03217224A JP H03217224 A JPH03217224 A JP H03217224A JP 1069790 A JP1069790 A JP 1069790A JP 1069790 A JP1069790 A JP 1069790A JP H03217224 A JPH03217224 A JP H03217224A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- control means
- vacuum container
- vacuum
- flow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000356 contaminant Substances 0.000 abstract description 10
- 239000007789 gas Substances 0.000 description 39
- 239000011261 inert gas Substances 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/002—Component parts of these vessels not mentioned in B01J3/004, B01J3/006, B01J3/02 - B01J3/08; Measures taken in conjunction with the process to be carried out, e.g. safety measures
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Packages (AREA)
- Self-Closing Valves And Venting Or Aerating Valves (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は、半導体製造施設においてウエハの保管等に用
いられる真空容器に関し、特に、該容器の真空を破壊(
ブレーク)するため該真空容器内へ気体を導入する真空
容器のリーク機構に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a vacuum container used for storing wafers in a semiconductor manufacturing facility.
The present invention relates to a leakage mechanism of a vacuum container that introduces gas into the vacuum container in order to break the vacuum container.
[従来の技術]
従来、真空容器内の真空をブレークするためには、該真
空容器内へ気体を導入する管路中にスローリークバルブ
を取り付け、該バルブを操作して空気(エア)或いは不
活性ガスを緩やかに導入することによって行われていた
。[Prior Art] Conventionally, in order to break the vacuum in a vacuum container, a slow leak valve is installed in a pipe that introduces gas into the vacuum container, and the valve is operated to release air or non-liquid. This was done by slowly introducing active gas.
[発明が解決しようとする課題]
しかし、この様な従来の方式では汚染の防止には不十分
であった。すなわち、真空容器内に保管されたウエハ等
の内容物に対する汚染は極力防止しなければならないが
、従来の技術では真空容器内へ導入される気体流の制御
が十分に行われていないので、エア或いは不活性ガスを
導入した際に乱流が発生する。そして、この乱流により
、容器内の汚染物質か舞い上がって内容物に再付着して
しまう。また、真空容器の内壁に付着していた汚染物質
がエア或いは不活性ガスの導入の際に剥離して、内容物
に再付着してしまうという問題がある。[Problems to be Solved by the Invention] However, such conventional methods were insufficient to prevent contamination. In other words, contamination of the contents such as wafers stored in the vacuum container must be prevented as much as possible, but with conventional technology, the gas flow introduced into the vacuum container is not sufficiently controlled. Alternatively, turbulence occurs when an inert gas is introduced. This turbulence causes contaminants within the container to fly up and re-adhere to the contents. Further, there is a problem in that contaminants that have adhered to the inner wall of the vacuum container are peeled off when air or inert gas is introduced and re-adhered to the contents.
内容物が例えばウエハである場合には、上記のような汚
染物質の再付着が起こると最終製品である半導体チップ
の歩留まりが悪化し、製造コストの高騰化を招く事とな
る。When the contents are wafers, for example, if the re-deposition of contaminants as described above occurs, the yield of semiconductor chips, which are final products, will deteriorate, leading to an increase in manufacturing costs.
本発明は上記した従来技術の問題点に鑑みて提案された
もので、真空がブレークされた際に内容物へ汚染物が再
付着することが防止される真空容器のリーク機構の提供
を目的としている。The present invention was proposed in view of the problems of the prior art described above, and aims to provide a leakage mechanism for a vacuum container that prevents contaminants from re-adhering to the contents when the vacuum is broken. There is.
[課題を解決するための手段]
本発明の真空容器のリーク機構は、真空容器内の真空を
破壊するため該真空容器内へ気体を導入する真空容器の
リーク機構において、真空容器内へ気体を導入する気体
導入流路が前記真空容器と接続する導入口部分に気体流
制御手段を設け、該気体流制御手段は気体が流れる流路
と該流路の内部に設けた流速減少手段とを含んでいる。[Means for Solving the Problems] The vacuum container leak mechanism of the present invention introduces gas into the vacuum container to break the vacuum inside the vacuum container. A gas flow control means is provided at an inlet portion where the gas introduction flow path connects with the vacuum container, and the gas flow control means includes a flow path through which the gas flows and a flow rate reduction means provided inside the flow path. I'm here.
本発明の実施に際して、真空容器内へ導入される気体が
空気である場合には、前記気体導入流路の空気流入口側
に目が微細なフィルタを設けて、外部からの粒子による
汚染を防止するのが好ましい。In carrying out the present invention, if the gas introduced into the vacuum container is air, a fine-mesh filter is provided on the air inlet side of the gas introduction channel to prevent contamination by particles from the outside. It is preferable to do so.
また、前記気体流制御手段の上流側にクイックカップリ
ング等の自動接続機構を設け、真空容器を移動自在に構
成することも可能である。Furthermore, it is also possible to provide an automatic connection mechanism such as a quick coupling on the upstream side of the gas flow control means to make the vacuum container movable.
さらに、前記流速減少手段としては、前記気体流制御手
段内瞬ある気体用の流路に形成した屈折部分或いは拡径
部分、該流路中に設置された多孔質体等が好ましい。Further, as the flow rate reducing means, a bent portion or an enlarged diameter portion formed in a gas flow path within the gas flow control means, a porous body installed in the flow path, etc. are preferable.
[作用コ
上記したような構成を有する本発明によれば、清浄なエ
アや不活性ガス(N2、Ar等)が真空のブレークのた
め真空容器内へ導入される際に、゛これ等の気体は気体
流制御手段の内部に設けた流速減少手段により拡径、衝
突、流路抵抗等を受け、気流がコントロールされて低速
となり、不必要な乱流を発生させることがない。その結
果、容器内の汚染物質が舞い上がって内容物に再付着す
ることや、真空容器の内壁に付着していた汚染物質がエ
ア或いは不活性ガスの導入の際に剥離して内容物に再付
着してしまうことが防止される。[Function] According to the present invention having the configuration described above, when clean air or inert gas (N2, Ar, etc.) is introduced into the vacuum container to break the vacuum, The airflow is subjected to diameter expansion, collision, flow path resistance, etc. by the flow velocity reduction means provided inside the gas flow control means, and the airflow is controlled to a low velocity, thereby preventing unnecessary turbulence from occurring. As a result, contaminants inside the container may fly up and re-adhere to the contents, or contaminants that have adhered to the inner wall of the vacuum container may peel off and re-adhere to the contents when air or inert gas is introduced. This will prevent you from doing so.
そのため、真空容器内に保管されていた内容物がウエハ
である場合には、その最終製品である半導体チップの歩
留まりも向上し、コストも低くなる。Therefore, when the contents stored in the vacuum container are wafers, the yield of the final product, the semiconductor chip, is improved and the cost is reduced.
[実施例]
以下、添付した図面を参照して、本発明の実施例につい
て説明する。[Example] Hereinafter, an example of the present invention will be described with reference to the attached drawings.
第1図において符号10は真空容器を示し、該真空容器
には気体導入流路12が接続されている。In FIG. 1, reference numeral 10 indicates a vacuum container, and a gas introduction channel 12 is connected to the vacuum container.
この気体導入流路l2は、合流部分14においてエア導
入流路16と不活性ガス導入流路18とが合流している
。エア導入流路16の端部にはエアフィルタ20が設け
られている。一方、不活性ガス導入流路18の端部は清
浄なN2、Ar等の不活性ガスの図示しない貯蔵部と接
続されている。In this gas introduction channel l2, an air introduction channel 16 and an inert gas introduction channel 18 merge at a merging portion 14. An air filter 20 is provided at the end of the air introduction channel 16. On the other hand, the end of the inert gas introduction channel 18 is connected to a storage section (not shown) of clean inert gas such as N2 or Ar.
なお、不活性ガス導入流路18の端部を清浄空気源(図
示せず)に接続しても良い。Note that the end of the inert gas introduction channel 18 may be connected to a clean air source (not shown).
真空容器10と気体導入流路12とが接続している箇所
には、詳細を第2図、第3図に示す気体流制御手段22
が設けられている。なお第1図において、符号23、2
6、28は開閉バルブ、符号30はリークバルブ、符号
32は真空ポンプ系を示している。At the point where the vacuum container 10 and the gas introduction channel 12 are connected, there is a gas flow control means 22 whose details are shown in FIGS. 2 and 3.
is provided. In addition, in FIG. 1, the symbols 23, 2
6 and 28 are open/close valves, 30 is a leak valve, and 32 is a vacuum pump system.
第2図、第3図において、気体導入流路12に接続され
た気体流制御手段22は気体が流れる流路24から構成
されており、該流路24は流速減少手段として屈折部分
34、36、38、40を含んでいる。また、屈折部分
36、38、40の各々を境界とし、流路24の上流側
に比較して下流側の管径が拡大している。換言すると、
屈折部分屈折部分36、38、40の各々はそれぞれ拡
径部分42、44、46を構成している。そして、前記
流路24は点線24tで示すような流路を形成する。In FIGS. 2 and 3, the gas flow control means 22 connected to the gas introduction flow path 12 is composed of a flow path 24 through which gas flows, and the flow path 24 has bent portions 34 and 36 as flow velocity reducing means. , 38, and 40. Further, each of the bent portions 36, 38, and 40 is used as a boundary, and the pipe diameter on the downstream side of the flow path 24 is larger than that on the upstream side. In other words,
Refracting Portions Each of the refracting portions 36, 38, 40 constitutes an enlarged diameter portion 42, 44, 46, respectively. The flow path 24 forms a flow path as shown by a dotted line 24t.
第1図、第2図、第3図の実施例において、真空容器1
0の真空をブレークするに際して、空気を使用する場合
にはバルブ26を開放してバルブ28を閉鎖し、そして
バルブ23を開放し、リークバルブ30を所定の開度に
設定すれば良い。導入される空気はエアフィルタ20に
より清浄化されて気体導入流路12内を通過する。In the embodiments of FIGS. 1, 2, and 3, the vacuum vessel 1
When using air to break the zero vacuum, it is sufficient to open the valve 26, close the valve 28, open the valve 23, and set the leak valve 30 to a predetermined opening degree. The introduced air is purified by the air filter 20 and passes through the gas introduction channel 12 .
一方、清浄化されたAr,N2等の不活性ガスを使用す
る場合には、バルブ26を閉鎖してバルブ28を開放す
る。この場合、導入されるガスは既に清浄化されている
ので、フィルタは不要である。On the other hand, when using a purified inert gas such as Ar or N2, the valve 26 is closed and the valve 28 is opened. In this case, a filter is not required since the gas introduced is already purified.
気体導入流路12内を通過した気体は気体流制御手段2
2を介して真空容器10内へ導入される。The gas that has passed through the gas introduction channel 12 is transferred to the gas flow control means 2.
2 into the vacuum vessel 10.
ここで、該気体は第2図及び第3図中で矢印1. Nで
示すように気体流制御手段22内に導入され、矢印OU
Tで示すように真空容器10内へ誘導されるが、気体流
制御手段22内の流路24の屈折部分34、36、38
、40及び拡径部分42、44、46を通過する度に減
速されるので、真空容器10内に到達した時には非常に
緩やかな流れとなっている。そのため、真空容器10内
に乱流を発生させることがなく、汚染物質を舞い上げた
り、真空容器10の内壁から汚染物質を剥離させてしま
うことは無い。従って、汚染物質が真空容器10の内容
物(ウエハ等)を再汚染することが防止される。Here, the gas is indicated by the arrow 1 in FIGS. 2 and 3. is introduced into the gas flow control means 22 as indicated by the arrow OU.
The bent portions 34, 36, 38 of the flow path 24 within the gas flow control means 22 are guided into the vacuum vessel 10 as shown at T.
, 40 and the enlarged-diameter portions 42, 44, and 46, the flow is very slow when it reaches the vacuum vessel 10. Therefore, no turbulent flow is generated within the vacuum container 10, and no contaminants are thrown up or peeled off from the inner wall of the vacuum container 10. Therefore, contaminants are prevented from recontaminating the contents (wafers, etc.) of the vacuum container 10.
第4図は気体流制御手段22の他の実施例を示しており
、流路24内に流速減少手段として多孔質体50を設け
ている。この多孔質体50により、流路24を通過する
気体は更に減速されるのである。FIG. 4 shows another embodiment of the gas flow control means 22, in which a porous body 50 is provided in the flow path 24 as a flow rate reducing means. This porous body 50 further decelerates the gas passing through the flow path 24.
第5図に示す実施例は、真空容器60を脱着自在として
移動可能にせしめたものであり、気体流制御手段22及
び真空ポンプ系32の直ぐ上流において、自動接続機構
としてクイックカップリング62、64がそれぞれ設け
られている。真空容器60を移動する際には、クイック
カップリング62、64をそれぞれ切り離せば良い。In the embodiment shown in FIG. 5, the vacuum container 60 is made detachable and movable, and quick couplings 62, 64 are installed as an automatic connection mechanism immediately upstream of the gas flow control means 22 and the vacuum pump system 32. are provided for each. When moving the vacuum container 60, it is sufficient to separate the quick couplings 62 and 64, respectively.
[発明の効果] 本発明の効果を以下に列挙する。[Effect of the invention] The effects of the present invention are listed below.
(1) 真空のブレークのため真空容器内へ導入される
清浄なエア或いは不活性ガス(N2、Ar等)が、気体
流制御手段の内部に設けた流速減少手段により拡径、衝
突、流路抵抗等を受け、その気流がコントロールされて
、不必要な乱流や巻上げ等を発生させることがない。(1) Clean air or inert gas (N2, Ar, etc.) introduced into the vacuum container to break the vacuum is expanded, collided, and blocked by the flow velocity reduction means provided inside the gas flow control means. The airflow is controlled by the resistance and does not cause unnecessary turbulence or winding up.
(2) エア或いは不活性ガスを容器内へ導入する際に
、汚染物質が内容物に再付着することが防止される。(2) Contaminants are prevented from re-adhering to the contents when air or inert gas is introduced into the container.
(3) 真空容器内に保管されていた内容物(ウエハ)
から製造される最終製品(例えば半導体チップ)の歩留
まりが向上し、コストも低くなる。(3) Contents (wafers) stored in the vacuum container
The yield of final products (for example, semiconductor chips) manufactured from these materials is improved and costs are reduced.
(4) 真空容器を脱着自在として移動可能することが
出来る。(4) The vacuum container can be detached and moved.
第1図は本発明の一実施例を示すブロック図、第2図は
第1図の実施例で用いられる気体流制御手段の正面断面
図、第3図は第2図のX矢視図、第4図は気体流制御手
段の他の実施例を示す正面断面図、第5図は本発明のそ
の他の実施例を示すブロック図である。
10・・・真空容器 12・・・気体導入流路 2
2・・・気体流制御手段 24・・・気体流制御手段
の流路 34、36、38、40・・・屈折部分42
、44、46・・・拡径部分 50・・・多孔質体6
2、64・・・自動接続機構
第
1
図
第
2
図
第
6
図FIG. 1 is a block diagram showing an embodiment of the present invention, FIG. 2 is a front sectional view of the gas flow control means used in the embodiment of FIG. 1, and FIG. 3 is a view taken along the X arrow in FIG. FIG. 4 is a front sectional view showing another embodiment of the gas flow control means, and FIG. 5 is a block diagram showing another embodiment of the present invention. 10... Vacuum container 12... Gas introduction channel 2
2... Gas flow control means 24... Channel of gas flow control means 34, 36, 38, 40... Bent portion 42
, 44, 46... Expanded diameter portion 50... Porous body 6
2, 64... Automatic connection mechanism Fig. 1 Fig. 2 Fig. 6
Claims (1)
導入する真空容器のリーク機構において、真空容器内へ
気体を導入する気体導入流路が前記真空容器と接続する
導入口部分に気体流制御手段を設け、該気体流制御手段
は気体が流れる流路と該流路の内部に設けた流速減少手
段とを含んでいることを特徴とする真空容器のリーク機
構。In a vacuum container leak mechanism that introduces gas into the vacuum container in order to break the vacuum inside the vacuum container, a gas introduction channel that introduces gas into the vacuum container has a gas flow at an inlet portion that connects with the vacuum container. 1. A leak mechanism for a vacuum container, comprising a control means, the gas flow control means including a flow path through which gas flows and a flow rate reduction means provided inside the flow path.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1069790A JPH03217224A (en) | 1990-01-22 | 1990-01-22 | Leak mechanism of vacuum vessel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1069790A JPH03217224A (en) | 1990-01-22 | 1990-01-22 | Leak mechanism of vacuum vessel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03217224A true JPH03217224A (en) | 1991-09-25 |
Family
ID=11757480
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1069790A Pending JPH03217224A (en) | 1990-01-22 | 1990-01-22 | Leak mechanism of vacuum vessel |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03217224A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009078848A (en) * | 2007-09-27 | 2009-04-16 | Mitsubishi Pencil Co Ltd | Fuel cartridge |
-
1990
- 1990-01-22 JP JP1069790A patent/JPH03217224A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009078848A (en) * | 2007-09-27 | 2009-04-16 | Mitsubishi Pencil Co Ltd | Fuel cartridge |
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