JPH03217843A - Foreign matter inspecting device - Google Patents
Foreign matter inspecting deviceInfo
- Publication number
- JPH03217843A JPH03217843A JP2012592A JP1259290A JPH03217843A JP H03217843 A JPH03217843 A JP H03217843A JP 2012592 A JP2012592 A JP 2012592A JP 1259290 A JP1259290 A JP 1259290A JP H03217843 A JPH03217843 A JP H03217843A
- Authority
- JP
- Japan
- Prior art keywords
- scattered light
- frame
- foreign matter
- height
- pellicle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/94—Investigating contamination, e.g. dust
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、枠にペリクルを形成した異物付着防止手段を
基板に装着した状態で、枠の高さを検出する方法及びそ
の装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method and apparatus for detecting the height of a frame in a state where a foreign matter adhesion prevention means in which a pellicle is formed on the frame is attached to a substrate.
従来の異物検査装置は、第1図及び第2図に示すように
構成されていた。即ち、レテイクルまたはマスクの基板
1上に存在する異物6に対して斜め上方よりレーザ発振
器4より出射された偏光レーザ光5が照射されると、異
物6より散乱7が生じる。そこで、この散乱7の一部の
散乱光8を受光器9により検出することにより異物6の
存在を知ることができる。異物検査は、基板1の面上の
異物ばかりではなく、ペリクル膜3の膜上の異物10を
対象にすることも必要になる。通常、偏光レーザ5と散
乱光8との各光路は一定位置に定めておく場合が多く,
このため、異物10を検査する際には、ペリクル枠2の
高さ、即ち基板1の表面からペリクル膜3までの高さの
ずれ分だけZ軸方向の位置調整を行なわなければならな
い。これまで、高さとしては,ペリクルのカタログ仕様
等より引用して固定の数値を検査開始前の条件設定時に
キー人力する方法等が用いられていた。装置の高感度化
に伴い、偏光レーザ光5のビーム径が小さくなりつつあ
り、その焦点深度も狭くなっていること,また高倍率顕
微鏡で異物観察も行なえるようにすると、やはり焦点深
度が狭くなるため、特に前述のペリクル枠2の高さは正
確な値が要求される。A conventional foreign matter inspection device was constructed as shown in FIGS. 1 and 2. That is, when the polarized laser beam 5 emitted from the laser oscillator 4 is irradiated obliquely from above onto a foreign object 6 existing on the substrate 1 of a reticle or mask, scattering 7 occurs from the foreign object 6. Therefore, by detecting a part of the scattered light 8 of the scattered light 7 with the light receiver 9, the presence of the foreign object 6 can be known. In the foreign matter inspection, it is necessary to target not only the foreign matter on the surface of the substrate 1 but also the foreign matter 10 on the pellicle film 3. Usually, the optical paths of the polarized laser 5 and the scattered light 8 are often set at fixed positions.
Therefore, when inspecting foreign matter 10, it is necessary to adjust the position in the Z-axis direction by the amount of deviation in the height of pellicle frame 2, that is, the height from the surface of substrate 1 to pellicle film 3. Up until now, the height has been determined by manually inputting a fixed value from the pellicle catalog specifications, etc., when setting conditions before starting an inspection. As equipment becomes more sensitive, the beam diameter of the polarized laser beam 5 is becoming smaller, and its depth of focus is also becoming narrower.Also, if it is possible to observe foreign objects with a high-magnification microscope, the depth of focus is becoming narrower. Therefore, an accurate value is particularly required for the height of the pellicle frame 2 mentioned above.
しかしながら、ペリクル枠2の高さは、公称値に対しば
らつきが多いこと、また基板1に取付ける際の接着剤の
厚み等も、焦点深度に比べて無視できないことから、数
値を入力する方法では性能に与える影響も大きい。また
、一つ一つその都度計測して数値を入力するのも実用的
ではない。However, the height of the pellicle frame 2 varies widely from the nominal value, and the thickness of the adhesive used when attaching it to the substrate 1 cannot be ignored compared to the depth of focus. It also has a large impact on Furthermore, it is not practical to measure each item one by one and input the numerical values.
本発明の目的は、上記従来技術の欠点をなくして、枠の
高さの実寸法を検査の都度,簡単な構成で正確に測定し
、偏光レーザ光及び顕微鏡の各焦点位置に迅速に合せら
れる装置を提供することにある。An object of the present invention is to eliminate the drawbacks of the above-mentioned conventional techniques, and to accurately measure the actual height of the frame each time an inspection is performed with a simple configuration, and to quickly align the polarized laser beam and each focal point of the microscope. The goal is to provide equipment.
上記目的を達成するために、異物からの散乱光を受光す
る検出器とは別に独立した検出器をペリクル枠の真上の
位置に設けて、枠で散乱する光を検出して枠の高さを正
確に測定し、この高さに相当する分、Z軸方向の位置調
整機構を駆動することによりペリクル面上の異物に焦点
位置を合わせられるようにしたものである。In order to achieve the above objective, an independent detector separate from the detector that receives the scattered light from the foreign object is installed directly above the pellicle frame, and the light scattered by the frame is detected and the height of the frame is adjusted. By accurately measuring the height and driving the position adjustment mechanism in the Z-axis direction by an amount corresponding to this height, the focus position can be adjusted to the foreign object on the pellicle surface.
異物からの散乱光を受光する検出器のみでは、異物から
の散乱光の他に枠からの散乱光も同時に受光してしまう
ために、枠からの散乱光のみを正確に弁別がしにくいが
、本発明の技術的手段によれば、枠からの散乱光のみを
とらえることができるので、正確に枠の高さを測定する
ことができる。If the detector only receives the scattered light from the foreign object, it will simultaneously receive the scattered light from the frame as well as the scattered light from the foreign object, making it difficult to accurately distinguish only the scattered light from the frame. According to the technical means of the present invention, only the scattered light from the frame can be captured, so the height of the frame can be accurately measured.
以下、本発明の一実施例を第3図により説明する。レー
ザ発振器4より出射された偏光レーザ光5が基板1の表
面に照射されると,反射点11で反射して散乱光8が生
じて受光器9により検出される。ここで反射点11に異
物があると異物の大きさにより散乱光の強度も変わり、
異物の大きさを知ることができる。An embodiment of the present invention will be described below with reference to FIG. When the polarized laser beam 5 emitted from the laser oscillator 4 is irradiated onto the surface of the substrate 1, it is reflected at the reflection point 11 to generate scattered light 8, which is detected by the light receiver 9. If there is a foreign object at the reflection point 11, the intensity of the scattered light will change depending on the size of the foreign object.
You can know the size of foreign objects.
いま、基板1の位置を例えばXまたはY軸方向に移動さ
せながら偏光レーザ光5を基板1に照射させると、X+
αまたはX一αの位置では、反射点11からまたは異物
からの散乱光8のみが検出される。一方、ちょうどXの
位置では、反射点l1からの散乱光は、ペリクル枠2の
天井コーナー・エッジ部に当たるため、ここで再度・散
乱光12を生じ、散乱光12の一部は受光器9で検出さ
れ、また一部はペリクル枠2の真上に設けられた受光器
13で検出される。この散乱光12が生ずる位置又は、
狭い範囲で定まるため、かなり正確にとらえることがで
きる.従って、X軸またはY軸方向を例えばエンコーダ
等で詳しく座標を読める手段を用いてX寸法を読みとれ
ば、ペリクル分2の高さはh=x−tanθ で求める
ことができる。ここで,θは,レーザ発振器4と受光器
9の固定されている配置及び基板1の表面の反射点11
のそれぞれの位置関係により容易に求めることができる
。Now, if the polarized laser beam 5 is irradiated onto the substrate 1 while moving the position of the substrate 1 in the X or Y axis direction,
At the position α or X-α, only the scattered light 8 from the reflection point 11 or from the foreign object is detected. On the other hand, at exactly the position X, the scattered light from the reflection point l1 hits the ceiling corner/edge of the pellicle frame 2, so it again generates scattered light 12, and a part of the scattered light 12 is transmitted to the light receiver 9. A portion of the light is detected by a light receiver 13 provided directly above the pellicle frame 2. The position where this scattered light 12 occurs or
Since it is determined within a narrow range, it can be captured quite accurately. Therefore, if the X dimension is read in the X-axis or Y-axis direction using a means that can read coordinates in detail, such as with an encoder, the height of the pellicle 2 can be determined as h=x-tanθ. Here, θ is the fixed arrangement of the laser oscillator 4 and the light receiver 9 and the reflection point 11 on the surface of the substrate 1.
can be easily determined from the respective positional relationships.
以上のことから、受光器13により散乱光が検出される
X軸またはY軸上のX位置を正確に検出し,増幅器14
より信号を得てCPU15へ入力する。そしてCPU1
5では.x−tanθ の計算を行ない、これにより得
られた寸法hに相当する量をZ軸の位置調整機構16へ
信号を送り移動させ,ペリクル膜3の面を基板1の表面
の位置へ垂直に移動させる。この結果、ペリクル膜3の
上に付着する異物10は、ちょうど反射点11の高さに
正確に移動させることができ,偏光レーザ光5の焦点が
正しく合った高さにすることができるため、異物10を
正確に検出できる。From the above, the X position on the X-axis or Y-axis where the scattered light is detected by the light receiver 13 is accurately detected, and the amplifier 14
A signal is obtained and input to the CPU 15. and CPU1
In 5. x-tanθ is calculated, and a signal is sent to the Z-axis position adjustment mechanism 16 to move the amount corresponding to the dimension h obtained thereby, and the surface of the pellicle film 3 is moved perpendicularly to the position of the surface of the substrate 1. let As a result, the foreign matter 10 adhering to the pellicle film 3 can be precisely moved to the height of the reflection point 11, and the polarized laser beam 5 can be properly focused at a height. Foreign matter 10 can be detected accurately.
本発明によれば、ペリクル枠の高さ、即ち基板表面より
ペリクル膜面までの正確な高さが測定でき,ペリクル膜
上の異物に対して焦点を合わせることができるので、異
物の検出性能が向上する他に、顕微鏡観察の際にも像の
ボケをなくすことができる。さらに、構成も簡素にまと
めることができる.According to the present invention, it is possible to accurately measure the height of the pellicle frame, that is, the height from the substrate surface to the pellicle film surface, and it is possible to focus on foreign objects on the pellicle film, thereby improving foreign object detection performance. In addition to improving image quality, it is also possible to eliminate blurring of images during microscopic observation. Furthermore, the configuration can be simplified.
第1図,第2図は異物検査装置の異物検査原理を示す概
略図、第3図は本発明を示す図である。
1・・・基板、2・・・ペリクル枠、3汽・ペリクル膜
、4・・・レーザ発振器、5・・・偏光レーザ光、6,
10・・・異物、7,8.12・・・散乱光、9,13
・・・受光器、11・・・反射点、14・・・増幅器、
15・・・CPU、16・・・位置調整機構。1 and 2 are schematic diagrams showing the principle of foreign matter inspection by a foreign matter inspection device, and FIG. 3 is a diagram illustrating the present invention. DESCRIPTION OF SYMBOLS 1... Substrate, 2... Pellicle frame, 3... Pellicle film, 4... Laser oscillator, 5... Polarized laser beam, 6,
10... Foreign matter, 7,8.12... Scattered light, 9,13
...Receiver, 11...Reflection point, 14...Amplifier,
15...CPU, 16...Position adjustment mechanism.
Claims (1)
ビームの焦点位置からの散乱光を光電検出することによ
つて異物を検出する異物検査装置において、前記基板上
の光ビーム焦点位置で反射する第一次の散乱光を光電検
出する一つもしくは複数の検出手段と、前記散乱光がペ
リクル枠のコーナー・エッジ部分に当つたときに再度発
生する第二次の散乱光をペリクル枠の上部にて光電検出
するための前記検出手段とは別の一つもしくは複数の検
出手段とを備え、前記該ペリクル枠の上部にて光電検出
した信号を用いてペリクル枠と前記ビームの焦点位置と
の距離の特定を行ない、該焦点位置を第一次の散乱光の
検出器との角度をもとに、ペリクル枠の高さを求め、該
高さに相当する量を高さ方向に位置調整を行ない、この
結果、ペリクル膜上に、前記光ビームの焦点位置を合わ
せることができるようにしたことを特徴とする異物検査
装置。1. In a foreign matter inspection device that detects foreign matter by scanning a substrate made of a pellicle frame material with a light beam and photoelectrically detecting scattered light from the focal position of the light beam, the light beam focus on the substrate is one or more detection means for photoelectrically detecting the primary scattered light reflected at the pellicle frame; one or more detection means separate from the detection means for photoelectric detection at the upper part of the frame, and detecting the pellicle frame and the focus of the beam using the signal photoelectrically detected at the upper part of the pellicle frame. The height of the pellicle frame is determined based on the angle between the focus position and the primary scattered light detector, and an amount corresponding to the height is moved in the height direction. A foreign matter inspection apparatus characterized in that the position adjustment is performed so that the focal position of the light beam can be aligned on the pellicle film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012592A JPH03217843A (en) | 1990-01-24 | 1990-01-24 | Foreign matter inspecting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012592A JPH03217843A (en) | 1990-01-24 | 1990-01-24 | Foreign matter inspecting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03217843A true JPH03217843A (en) | 1991-09-25 |
Family
ID=11809620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012592A Pending JPH03217843A (en) | 1990-01-24 | 1990-01-24 | Foreign matter inspecting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03217843A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1715329A1 (en) * | 2005-04-20 | 2006-10-25 | Canon Kabushiki Kaisha | Particle inspection apparatus and method, exposure apparatus, and device manufacturing method |
-
1990
- 1990-01-24 JP JP2012592A patent/JPH03217843A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1715329A1 (en) * | 2005-04-20 | 2006-10-25 | Canon Kabushiki Kaisha | Particle inspection apparatus and method, exposure apparatus, and device manufacturing method |
| US7388659B2 (en) | 2005-04-20 | 2008-06-17 | Canon Kabushiki Kaisha | Particle inspection apparatus and method, exposure apparatus, and device manufacturing method |
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