JPH0321804A - Method and device for measuring thickness of extremely thin film - Google Patents
Method and device for measuring thickness of extremely thin filmInfo
- Publication number
- JPH0321804A JPH0321804A JP15647989A JP15647989A JPH0321804A JP H0321804 A JPH0321804 A JP H0321804A JP 15647989 A JP15647989 A JP 15647989A JP 15647989 A JP15647989 A JP 15647989A JP H0321804 A JPH0321804 A JP H0321804A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- ultra
- infrared
- infrared rays
- infrared sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims description 6
- 230000003287 optical effect Effects 0.000 claims abstract description 48
- 238000005259 measurement Methods 0.000 claims description 8
- 239000010408 film Substances 0.000 description 21
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Length Measuring Devices By Optical Means (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は、極薄フィルム厚さ測定方法およびその装置に
関する.
[従来の技術]
極薄フィルムの厚さ(たとえば0.5〜207zm)を
測定する従来の装置は、赤外msと赤外線センサとの間
に極薄フィルムを配置し、赤外線源からの赤外線が極薄
フイルムを透過し,この透過した赤外mlを赤外線セン
サが測定し、この測定値に基づいてフィルムの厚さを求
めるものである.[発明が解決しようとする課題]
極薄フィルム程度の厚さになると、そのフィルムを赤外
線が透過する場合、干渉が起こる.たとえば、3pmの
厚さのフィルムに赤外線を透過し、干渉が発生すると、
4JLmまたは57Lmの厚さに相当する赤外線のみが
、そのフィルムを透過する.つまり、フィルムの厚さが
、そのフィルムを透過する光の波長の2分の1の長さと
同じ場合に、干渉が最も起こり、この干渉によってフィ
ルムを透過する赤外線量が少な〈なるので、結局、実際
の厚さよりも厚いフィルム厚が測定値として得られる.
本発明は、極薄フィルム厚を測定中に光の干渉が生じた
場合に、その干渉が生じたことを迅速、確実に知ること
ができる極薄フィルム厚さ測定方法およびその装置を提
供することを目的とするものである.
[課題を解決する手段]
本発明は、赤外線源からの赤外線が極薄フイルムを透過
し、この透過した赤外線量を赤外線センサが測定し、こ
の測定値に基づいて上記極薄フィルムのノ1Iさを測定
する方法において、上記赤外線源から上記赤外線センサ
に向う赤外線が上記極薄フィルムに入射する入射角を順
次、変えて上記透過赤外線量を測定するものである.
[作用1
本発明は、赤外線源から極薄フィルムを透過して赤外線
センサに向う赤外線が上記極薄フィルムに入射する入射
角を順次、変えて透過赤外線量を測定するので、極薄フ
ィルム厚を測定中に光の干渉が生じた場合に、赤外線セ
ンサが受ける赤外線量に差が生じ,干渉が生じたことを
迅速、確実に知ることができる.
[実施例]
第1図は、本発明の一実施例の説明図である.
この実施例は、赤外線源である黒体10と赤外線センサ
40との間に極薄フィルムFが走行しこの走行している
フィルムFを瞬時的に厚さ測定するものである.
黒体lOとフィルムFとの間に、円板状のチョッパ20
が設けられ,このチョッパは、モータ21によって回転
する.
第2図は,上記実施例におけるチョッパ20の平面図で
ある.
チョッパ20は、6等分され、透孔24を有する部分と
、遮蔽部25を有する部分と、全反射ミラー22を有す
る部分との3種類の部分が2つづつ設けられ、第1図中
、ミラー22の下には、透孔23が設けられている.
第3図は,上記実施例において、黒体lOの真上に,透
孔24が位置し,黒体lOからの赤外線が直接フィルム
Fを透過し、ハーフミラー33を透過し、赤外線センサ
40に向かう場合を示す図である.
なお,ミラー22が2第l図に示すように、図中、黒体
10の真上に位置したときに、黒体10からの赤外線が
ミラー22で反射し、この反射光を反射する全反射ミラ
ー3lが設けられ、ミラー3lで反射した赤外線が極薄
フィルムFを透過した後に、全反射ミラー32で反射さ
れ、この反射光がハーフミラー33で反射し、赤外線セ
ンサ40に送られる.また、第3図に示すように、チョ
ッパ20の透孔24が図中、黒体lOの真上にきたとき
に、黒体10からの赤外線が反射されずに、極FIフィ
ルムFを直接照射し、ハーフミラー33を透過して赤外
線センサ40に送られる.なお、チョッパ20の透孔2
4が黒体lOの真上にきたときに,黒体10から直接フ
ィルムFを透過し、ハーフミラー33を透過し、赤外線
センサ40に向かうが、この光路のうち,チョッパ20
とハーフミラー33との間の光路を「第1光路OPIJ
(第1図には一点鎖線で示してある)と呼ぶ.また
、第1図に示すように黒体10の真上にミラー22が位
置したときに、黒体10からの赤外線がミラー22、3
1、32、33で反射し、赤外線センサ40に向かうが
、この光路のうち、ミラー31と32との間の光路を「
第2光路OP2J (第1図には実線の矢印で示して
ある)と呼ぶ.
ここで、第1光路OPIを経由した赤外線がハーフミラ
ー33を通過した後の光路と、第2光路OP2を経由し
た赤外線がミラー32、33を反射した後の光路とが同
一になるように、各ミラー22、3l、32、33の角
度が予め設定されている.また、黒体10と赤外線セン
サ40との間に極薄フィルムFが存在しないときに、第
1光路OPIを経由した赤外線がハーフミラー33を通
過した後の赤外線量と、第2光路OP2を経由した赤外
線がミラー32、33を反射した後の赤外線量とが同一
になるように、ミラー22、31,32、33の反射率
、ミラー33の透過率が予め設定されている.
黒体lOと透孔24とハーフミラー33とは、赤外線源
から赤外線センサに向う赤外線が第1の入射角で極薄フ
ィルムに入射する第1光学系の例である.また、黒体1
0と透孔23とミラー22、3l、32.32とは、赤
外線源から赤外線センサに向う赤外線が、上記第1の入
射角とは異なる第2の入射角で極薄フィルムに入射する
第2光学系の例である.
次に、上記実施例の動作について説明する.まず、黒体
10と赤外線センサ40との間から極薄フィルムFを除
去し、モータ21を回動し,第1図中、黒体10の真上
に,透孔24が位置するようにセットし、黒体10から
の赤外線が第1光路OPlを経由し、ハーフミラー33
を透過した後の赤外線量と、黒体10の真上にミラー2
2がセットされたときに、黒体lOからの赤外線が第2
光路OP2を経由し、ミラー33で反射した後の赤外線
量とが同じであることを確認する.もし、このときに,
上記2つの赤外線量(赤外線センサ40の出力値)が異
なっていれば、いずれかの場合における赤外線センサ4
0の出力値を補正する必要がある.
次に,極薄フィルムFを第1図に示すように横方向に走
行させ(または設置し)、黒体10からの赤外線が第1
光路OPIを通ったときにおける赤外線センサ40の出
力値と,黒体10からの赤外線が第2光路OP2を通っ
たときの赤外線センサ40の出力値とを検出する.2つ
の出力値は、通常、ほぼ同じかあり、このときには,光
の干渉が生じて無く,その赤外線センサ40の出力値は
正しいと判断する.
具体的には、赤外線が第1光路OPIを通ったときにお
ける赤外線センサ40の出力値と、赤外線が第2光路O
P2を通ったときにおける赤外線センサ40の出力値と
の差を求め、この差が所定の基準値よりも小さいときに
,2つの出力値が正しいと判断する.一方、上記差が基
準値以上であれば、その出力値のうちで少ない方の値を
、極薄フィルム厚さの測定値として使用するか,または
、2つの出力値をともに、極薄フィルム厚さの測定値と
しては使用しないようにする.このようにすることによ
って、光の干渉が生じていることを迅速、確実に知るこ
とができ、また、その干渉による厚さの誤測定を除去す
ることができる.
つまり、極薄フィルムFに対する第1光路OP1の入射
角と、極薄フィルムFに対する第2光路OP2の入射角
とは異なるので、赤外線が第1光路OPIを経由した場
合のフィルム厚値と、第2光路OP2を経由した場合に
おけるフィルム厚データとは異なるが、その差は僅かで
ある.しかし、第1光路OPIまたは第2光路OP2を
経由した赤外線が光の干渉を起こしていると、いずれか
のフィルム厚値が極端に大きくなり、上記差が大きくな
る。この差を検出すれば,干渉の発生の有無を知ること
ができる.
なお、上記実施例において、第1光路OPIと第2光路
OP2との交角(入射角の差)は、5〜10’程度であ
るが、それ以外の範囲に設定してもよい.
上記実施例においては、黒体lOを1つだけ設けている
が、第1図に示す黒体10の他に,第1図中、ミラー3
1の左下に,別の黒体を設け、ミラー31を除去し,こ
の別の黒体からの赤外線を第2光路OP2に通過させる
ようにしてもよい.また,上記実施例においては、赤外
線センサを1つだけ設けているが、赤外線センサ40の
他に、第1図中、ミラー32の右上に別の赤外線センサ
を設け、ミラー32を除去し、第2光路OP2を経由し
た赤外線を上記別の赤外線センサで受光するようにして
もよい.
また、上記実施例においては、光路OPI.OP2の2
つの光路のみを設定しているが、入射角が互いに異なる
3つ以上の光路を設け、その3つ以上の光路を経由した
赤外線に基づいて極薄フィルムFの厚さを測定するよう
にしてもよい.[発明の効果]
本発明によれば,極薄フィルム厚を測定中に光の干渉が
生じた場合に、その干渉が生じたことを迅速、確実に知
ることができるという効果を奏する.DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method and apparatus for measuring the thickness of an ultra-thin film. [Prior Art] A conventional device for measuring the thickness of an ultra-thin film (for example, 0.5 to 207 zm) places an ultra-thin film between an infrared ms and an infrared sensor, and measures the infrared rays from an infrared source. An infrared sensor measures the transmitted infrared ml through an ultra-thin film, and the thickness of the film is determined based on this measured value. [Problems to be Solved by the Invention] When the thickness of a film becomes as thin as that of an ultra-thin film, interference occurs when infrared rays pass through the film. For example, when infrared rays are transmitted through a 3 pm thick film and interference occurs,
Only infrared radiation corresponding to a thickness of 4 JLm or 57Lm is transmitted through the film. In other words, interference occurs most when the thickness of the film is equal to half the wavelength of the light that passes through the film, and this interference reduces the amount of infrared light that passes through the film. The measured film thickness is thicker than the actual thickness. The present invention provides a method and apparatus for measuring the thickness of an ultra-thin film that can quickly and reliably determine that the interference has occurred when light interference occurs while measuring the thickness of the ultra-thin film. The purpose is to [Means for Solving the Problems] The present invention allows infrared rays from an infrared source to pass through an ultra-thin film, an infrared sensor measures the amount of infrared rays that has passed through, and based on this measurement value, the ultra-thin film is In this method, the amount of transmitted infrared rays is measured by sequentially changing the incident angle at which infrared rays from the infrared source toward the infrared sensor are incident on the ultrathin film. [Operation 1] The present invention measures the amount of transmitted infrared rays by sequentially changing the angle of incidence of infrared rays transmitted from an infrared source through an ultra-thin film and directed toward an infrared sensor into the ultra-thin film. If light interference occurs during measurement, there will be a difference in the amount of infrared rays received by the infrared sensor, allowing you to quickly and reliably know that interference has occurred. [Example] FIG. 1 is an explanatory diagram of an example of the present invention. In this embodiment, an extremely thin film F runs between a black body 10, which is an infrared source, and an infrared sensor 40, and the thickness of the running film F is instantaneously measured. A disk-shaped chopper 20 is installed between the black body IO and the film F.
The chopper is rotated by a motor 21. FIG. 2 is a plan view of the chopper 20 in the above embodiment. The chopper 20 is divided into six equal parts, each having two of three types of parts: a part with a through hole 24, a part with a shielding part 25, and a part with a total reflection mirror 22. A through hole 23 is provided below the mirror 22. FIG. 3 shows that in the above embodiment, the through hole 24 is located directly above the black body 10, and the infrared rays from the black body 10 directly pass through the film F, pass through the half mirror 33, and reach the infrared sensor 40. FIG. Note that, as shown in Figure 2, when the mirror 22 is positioned directly above the black body 10 in the figure, infrared rays from the black body 10 are reflected by the mirror 22, and this reflected light is reflected by total internal reflection. A mirror 3l is provided, and after the infrared rays reflected by the mirror 3l pass through the ultra-thin film F, it is reflected by the total reflection mirror 32, and this reflected light is reflected by the half mirror 33 and sent to the infrared sensor 40. Further, as shown in FIG. 3, when the through hole 24 of the chopper 20 is directly above the black body 10 in the figure, the infrared rays from the black body 10 are not reflected and are directly irradiated onto the polar FI film F. The light passes through the half mirror 33 and is sent to the infrared sensor 40. Note that the through hole 2 of the chopper 20
4 directly above the black body 10, it passes directly through the film F from the black body 10, passes through the half mirror 33, and heads toward the infrared sensor 40. Among this optical path, the chopper 20
The optical path between the half mirror 33 and the first optical path OPIJ
(indicated by a dashed line in Figure 1). Furthermore, when the mirror 22 is positioned directly above the black body 10 as shown in FIG.
1, 32, and 33, and heads toward the infrared sensor 40. Of this optical path, the optical path between the mirrors 31 and 32 is
It is called the second optical path OP2J (indicated by a solid arrow in Figure 1). Here, the optical path after the infrared rays passing through the first optical path OPI passes through the half mirror 33 is the same as the optical path after the infrared rays passing through the second optical path OP2 reflects the mirrors 32 and 33. The angle of each mirror 22, 3l, 32, 33 is set in advance. Also, when there is no ultra-thin film F between the black body 10 and the infrared sensor 40, the amount of infrared rays after passing through the first optical path OPI and the amount of infrared rays after passing through the half mirror 33, and the amount of infrared rays passing through the second optical path OP2. The reflectance of the mirrors 22, 31, 32, and 33 and the transmittance of the mirror 33 are set in advance so that the amount of infrared rays reflected by the mirrors 32 and 33 is the same. The black body lO, the through hole 24, and the half mirror 33 are an example of a first optical system in which infrared rays directed from an infrared source to an infrared sensor are incident on the ultrathin film at a first incident angle. Also, black body 1
0, the through hole 23, and the mirrors 22, 3l, and 32.32 are a second channel in which the infrared rays directed from the infrared source toward the infrared sensor are incident on the ultrathin film at a second incident angle different from the first incident angle. This is an example of an optical system. Next, the operation of the above embodiment will be explained. First, remove the ultra-thin film F from between the black body 10 and the infrared sensor 40, rotate the motor 21, and set it so that the through hole 24 is located directly above the black body 10 in FIG. Then, the infrared rays from the black body 10 pass through the first optical path OPl and reach the half mirror 33.
The amount of infrared rays after passing through the mirror 2 directly above the black body 10
2 is set, the infrared rays from the black body lO
Confirm that the amount of infrared rays after passing through optical path OP2 and being reflected by mirror 33 is the same. If at this time,
If the above two amounts of infrared rays (output values of the infrared sensor 40) are different, the infrared sensor 4 in either case
It is necessary to correct the output value of 0. Next, as shown in FIG.
The output value of the infrared sensor 40 when the infrared rays pass through the optical path OPI and the output value of the infrared sensor 40 when the infrared rays from the black body 10 pass through the second optical path OP2 are detected. The two output values are usually approximately the same or are the same, and in this case, it is determined that no light interference occurs and the output value of the infrared sensor 40 is correct. Specifically, the output value of the infrared sensor 40 when the infrared rays pass through the first optical path OPI, and the output value of the infrared rays when the infrared rays pass through the second optical path OPI.
The difference between the output value and the output value of the infrared sensor 40 when passing through P2 is determined, and when this difference is smaller than a predetermined reference value, it is determined that the two output values are correct. On the other hand, if the above difference is greater than or equal to the reference value, the smaller of the output values is used as the measurement value for the ultra-thin film thickness, or both output values are used to measure the ultra-thin film thickness. Avoid using it as a measurement value. By doing this, it is possible to quickly and reliably know that light interference is occurring, and also to eliminate erroneous thickness measurements due to the interference. In other words, since the angle of incidence of the first optical path OP1 on the ultra-thin film F and the angle of incidence of the second optical path OP2 on the ultra-thin film F are different, the film thickness value when the infrared rays pass through the first optical path OPI and the angle of incidence of the second optical path OP2 on the ultra-thin film F are different. Although it differs from the film thickness data obtained when passing through two optical paths OP2, the difference is slight. However, if the infrared rays passing through the first optical path OPI or the second optical path OP2 cause optical interference, the thickness value of one of the films becomes extremely large, and the above-mentioned difference becomes large. By detecting this difference, it is possible to know whether interference is occurring. In the above embodiment, the intersection angle (difference in incidence angle) between the first optical path OPI and the second optical path OP2 is approximately 5 to 10', but it may be set to a range other than that. In the above embodiment, only one black body 10 is provided, but in addition to the black body 10 shown in FIG.
Another black body may be provided at the lower left of 1, the mirror 31 may be removed, and the infrared rays from this other black body may be passed through the second optical path OP2. Further, in the above embodiment, only one infrared sensor is provided, but in addition to the infrared sensor 40, another infrared sensor is provided at the upper right of the mirror 32 in FIG. The infrared rays that have passed through the two optical paths OP2 may be received by another infrared sensor. Further, in the above embodiment, the optical path OPI. OP2 no 2
Although only one optical path is set, it is also possible to provide three or more optical paths with different incident angles and measure the thickness of the ultra-thin film F based on the infrared rays that have passed through the three or more optical paths. good. [Effects of the Invention] According to the present invention, when light interference occurs while measuring the thickness of an ultra-thin film, it is possible to quickly and reliably know that the interference has occurred.
【図面の簡単な説明】
第1図は,本発明の一実施例の説明図である.
第2図は、上記実施例におけるチョッパ20の平面図で
ある.
第3図は、上記実施例において,黒体10の真上に,透
孔24が位置し、黒体lOからの赤外線が直接フィルム
Fを透過し、ハーフミラー33を透過し、赤外線センサ
40に向かう場合を示す図である.
33:n−7ミラーl
10・・・黒体、
20・・・チョッパ、
22、31、32・・・全反射ミラー
33・・・/\−7ミラー
40・・・赤外線センザ、
F・・・極薄フィ・ルム.[Brief Description of the Drawings] Figure 1 is an explanatory diagram of one embodiment of the present invention. FIG. 2 is a plan view of the chopper 20 in the above embodiment. FIG. 3 shows that in the above embodiment, the through hole 24 is located directly above the black body 10, and the infrared rays from the black body 10 directly pass through the film F, pass through the half mirror 33, and reach the infrared sensor 40. FIG. 33: n-7 mirror l 10...black body, 20...chopper, 22, 31, 32...total reflection mirror 33.../\-7 mirror 40...infrared sensor, F...・Ultra-thin film.
Claims (5)
この透過した赤外線量を赤外線センサが測定し、この測
定値に基づいて上記極薄フィルムの厚さを測定する方法
において、 上記赤外線源から上記赤外線センサに向う赤外線が上記
極薄フィルムに入射する入射角を順次、変えて上記透過
赤外線量を測定することを特徴とする極薄フィルム厚さ
測定方法。(1) Infrared rays from an infrared source pass through an ultra-thin film,
In a method in which an infrared sensor measures the amount of transmitted infrared rays, and the thickness of the ultra-thin film is measured based on the measured value, the infrared rays directed from the infrared source to the infrared sensor are incident on the ultra-thin film. A method for measuring the thickness of an ultra-thin film, characterized in that the amount of transmitted infrared rays is measured by changing the angle one after another.
この透過した赤外線量を赤外線センサが測定し、この測
定値に基づいて、上記極薄フィルムの厚さを測定する極
薄フィルム厚さ測定装置において、 上記赤外線源から上記赤外線センサに向う赤外線が第1
の入射角で上記極薄フィルムに入射する第1光学系と; 上記赤外線源から上記赤外線センサに向う赤外線が、上
記第1の入射角とは異なる第2の入射角で上記極薄フィ
ルムに入射する第2光学系と;を有することを特徴とす
る極薄フィルム厚さ測定装置。(2) Infrared rays from an infrared source pass through an ultra-thin film,
In an ultra-thin film thickness measuring device in which an infrared sensor measures the amount of transmitted infrared rays and measures the thickness of the ultra-thin film based on this measurement value, the infrared rays directed from the infrared source to the infrared sensor are 1
a first optical system that enters the ultra-thin film at an incident angle of; infrared rays directed from the infrared source toward the infrared sensor enter the ultra-thin film at a second incident angle different from the first incident angle; An ultra-thin film thickness measuring device comprising: a second optical system;
記第1光学系における赤外線源、赤外線センサと共通で
あり、上記第1光学系の赤外線源からの赤外線を2つの
ミラーで断続的に反射し、この反射光が上記極薄フィル
ムを透過し、この透過光を別のミラーで反射して、上記
第1光学系における赤外線センサに送ることを特徴とす
る極薄フィルム厚さ測定装置。(3) In claim (2), the infrared source and infrared sensor in the second optical system are common to the infrared source and infrared sensor in the first optical system, and the infrared rays from the infrared source in the first optical system are is intermittently reflected by two mirrors, this reflected light is transmitted through the ultra-thin film, this transmitted light is reflected by another mirror, and is sent to the infrared sensor in the first optical system. Ultra-thin film thickness measuring device.
における赤外線センサの受光量と、上記第2光学系にお
ける赤外線センサの受光量とを等しく設定したことを特
徴とする極薄フィルム厚さ測定装置。(4) In claim (2), when the ultra-thin film is not present, the amount of light received by the infrared sensor in the first optical system and the amount of light received by the infrared sensor in the second optical system are set to be equal. An ultra-thin film thickness measuring device featuring:
2光学系における赤外線センサの受光量との差が所定値
以上であるときに、上記両受光量のうちで少ない方の受
光量を極薄フィルム厚さの測定値として使用するか、ま
たは、上記両受光量を極薄フィルム厚さの測定値として
は使用しないことを特徴とする極薄フィルム厚さ測定装
置。(5) In claim (2), when the difference between the amount of light received by the infrared sensor in the first optical system and the amount of light received by the infrared sensor in the second optical system is a predetermined value or more, Ultra-thin film thickness characterized in that the smaller of the received light amounts is used as the measurement value of the ultra-thin film thickness, or both of the above-mentioned received light amounts are not used as the measurement value of the ultra-thin film thickness. measuring device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15647989A JPH0321804A (en) | 1989-06-19 | 1989-06-19 | Method and device for measuring thickness of extremely thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15647989A JPH0321804A (en) | 1989-06-19 | 1989-06-19 | Method and device for measuring thickness of extremely thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0321804A true JPH0321804A (en) | 1991-01-30 |
Family
ID=15628657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15647989A Pending JPH0321804A (en) | 1989-06-19 | 1989-06-19 | Method and device for measuring thickness of extremely thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0321804A (en) |
-
1989
- 1989-06-19 JP JP15647989A patent/JPH0321804A/en active Pending
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