JPH0321860U - - Google Patents
Info
- Publication number
- JPH0321860U JPH0321860U JP8184589U JP8184589U JPH0321860U JP H0321860 U JPH0321860 U JP H0321860U JP 8184589 U JP8184589 U JP 8184589U JP 8184589 U JP8184589 U JP 8184589U JP H0321860 U JPH0321860 U JP H0321860U
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- semiconductor device
- silicon substrate
- contact hole
- electrode structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Description
第１図ａ，ｂ，ｃ，ｄは本考案の電極構成を作
製する際のプロセスを示す断面説明図、第２図は
従来の半導体装置の電極構成を示す断面説明図で
ある。
１……シリコン基板、２……コンタクトホール
、３……ＡＩ配線、４……絶縁膜、５……ｐ型の
シリコン基板、６……ｎ＋領域、５……スパイク
、８……Ｓｉの析出、９……フオトレジストパタ
ーン、１０……ＡＩ、１１……Ｓｉリツチの部分
。
FIGS. 1a, b, c, and d are cross-sectional explanatory diagrams showing the process of manufacturing the electrode configuration of the present invention, and FIG. 2 is a cross-sectional explanatory diagram showing the electrode configuration of a conventional semiconductor device. 1...Silicon substrate, 2...Contact hole, 3...AI wiring, 4...Insulating film, 5...P type silicon substrate, 6...N + region, 5...Spike, 8...Si Deposition, 9...Photoresist pattern, 10...AI, 11...Si rich portion.
Claims (1)
クトホールを介してＡＩ配線を接触させて形成し
た半導体装置の電極構成において、ＡＩ配線の一
部に選択的にＳｉを導入し、ＡＩ配線が前記シリ
コン基板の所定の領域と接触するコンタクトホー
ルの近傍にのみＳｉを含有せしめてなることを特
徴とする半導体装置の電極構成。 In an electrode structure of a semiconductor device formed by contacting an AI wiring to a predetermined region formed on a silicon substrate via a contact hole, Si is selectively introduced into a part of the AI wiring, so that the AI wiring is connected to the silicon substrate. 1. An electrode structure for a semiconductor device, characterized in that Si is contained only in the vicinity of a contact hole that contacts a predetermined region of the semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8184589U JPH0321860U (en) | 1989-07-11 | 1989-07-11 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8184589U JPH0321860U (en) | 1989-07-11 | 1989-07-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0321860U true JPH0321860U (en) | 1991-03-05 |
Family
ID=31628140
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8184589U Pending JPH0321860U (en) | 1989-07-11 | 1989-07-11 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0321860U (en) |
-
1989
- 1989-07-11 JP JP8184589U patent/JPH0321860U/ja active Pending