JPH03218996A - Production of lithium niobate single crystal - Google Patents

Production of lithium niobate single crystal

Info

Publication number
JPH03218996A
JPH03218996A JP1370290A JP1370290A JPH03218996A JP H03218996 A JPH03218996 A JP H03218996A JP 1370290 A JP1370290 A JP 1370290A JP 1370290 A JP1370290 A JP 1370290A JP H03218996 A JPH03218996 A JP H03218996A
Authority
JP
Japan
Prior art keywords
single crystal
lithium niobate
annealing
niobate single
pool
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1370290A
Other languages
Japanese (ja)
Other versions
JP2664508B2 (en
Inventor
Tetsuo Suzuki
徹郎 鈴木
Hitoshi Takeda
均 武田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to JP2013702A priority Critical patent/JP2664508B2/en
Publication of JPH03218996A publication Critical patent/JPH03218996A/en
Application granted granted Critical
Publication of JP2664508B2 publication Critical patent/JP2664508B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To prevent the cracking of a large-sized lithium niobate single crystal obtd. by a pulling method at the time of treatment for forming a single domain and annealing by putting the single crystal on a tray covered with crushed pieces of such single crystals and subjecting the single crystal to treatment for forming a single domain and annealing. CONSTITUTION:A large-sized lithium niobate single crystal obtd. by a pulling method is put on a tray, preferably a platinum tray covered with crushed pieces (3-5mm size) of defective lithium niobate single crystals and residue after slicing by >=1cm thickness and the single crystal is subjected to treatment for forming a single domain and annealing by heating in an electric furnace to obtain a large-sized lithium niobate single crystal used for an acoustic surface wave filter.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は弾性表面波フィルターに用いるニオブ酸リチウ
ム単結晶の改良された製造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to an improved method for producing lithium niobate single crystals for use in surface acoustic wave filters.

[従来の技術] 弾付表面波フィルター用としてニオブ酸リチウムの大型
単結晶が使用されている。ニオブ酸リチウム羊結晶は通
常、炭酸リチウムと五酸化ニオビウムとをコングルエン
ト組成比に混合し、高温焼成して得られた二才ブ酸リチ
ウムを原料とする。
[Prior Art] A large single crystal of lithium niobate is used for a bullet surface wave filter. Lithium niobate crystals are usually made from lithium dibutate obtained by mixing lithium carbonate and niobium pentoxide in a congruent composition ratio and firing at a high temperature.

この原料を高周波誘導加熱炉内で白金ルッポ中で溶融し
、引き上げて大型結晶(プールと称す)となす。これを
一亘冷却した後、別の抵抗加熱炉で1000℃以上に数
10時間、保持し、アニーリングを行い、更に単一分域
化処理を行う.単一分域化処理としては、プールをニオ
ブ酸リチウムの焼結したセラミック板を電極としてリー
ド線を配し、抵抗加熱炉にてキュリー温度以上に加熱し
ながら直流電圧を印加してその後冷却しキュリー温度を
通過させ分極化させるのである。
This raw material is melted in a platinum lupus in a high-frequency induction heating furnace and pulled up to form large crystals (referred to as pools). After cooling it for a while, it is kept at a temperature of 1000°C or higher for several tens of hours in a separate resistance heating furnace, annealed, and then subjected to a single-zone treatment. In the single-segmentation process, the pool is heated to a temperature above the Curie temperature in a resistance heating furnace using a ceramic plate made of sintered lithium niobate as an electrode and a lead wire is applied, followed by cooling. It passes through the Curie temperature and becomes polarized.

しかし、上記したように、プールをアニーリングし、更
に単一分域化処理を行うと、アニーリング時ではプール
を乗せるニオブ酸リチウムのセラミック板との界面で、
単一分域化処理ではプールのへき開面でそれぞれクラッ
クが生じやすく、品質においても生産性においても極め
て不都合であるという問題点があった。
However, as mentioned above, when the pool is annealed and then subjected to a single domain treatment, at the interface with the lithium niobate ceramic plate on which the pool is placed during annealing,
The single-segmentation process has the problem that cracks are likely to occur at each cleavage plane of the pool, which is extremely disadvantageous in terms of both quality and productivity.

[,発明が解決しようとする課題] 本発明の目的は上記の問題点を解消し、プールのアニー
リング時および単一分域化処理時でのクラックの発生を
防止することができるニオブ酸リチウム単結晶の製造方
法を提供することにある。
[Problems to be Solved by the Invention] The purpose of the present invention is to solve the above-mentioned problems and to provide a lithium niobate monolith that can prevent the occurrence of cracks during pool annealing and single segmentation processing. An object of the present invention is to provide a method for producing crystals.

〔課題を解決するための手段〕[Means to solve the problem]

本発明は上記目的を達成するために、引上げ法で得られ
たニオブ酸リチウム単結晶(プール)をニオブ酸リチウ
ム単結晶粉砕品が敷き詰められた皿の上に設置し該プー
ルを単一分域化処理ならびにアニーリングを行う点に特
徴がある。
In order to achieve the above object, the present invention installs a lithium niobate single crystal (pool) obtained by a pulling method on a plate covered with crushed lithium niobate single crystals, and divides the pool into a single domain. It is characterized by the fact that it undergoes chemical treatment and annealing.

[イ乍用] 本発明方法で用いることのできるニオブ駿リチウム単結
晶粉砕品は、単結晶であればそれの製法はどのようなも
のでもよいが、質的に該プールと同等のものが好ましい
。従って引上げ法で得られたものが望ましく、不良品や
切断後の残品でも差し支えない。粉砕方法としては該単
結晶をスライサー等で0.5〜1mmの厚さのウエハー
状としたものを、水洗及び有機溶媒等で洗浄したのち、
乳鉢、ボールミル等により5mm以下、望ましくは3〜
51四方の粒状物となせば好適である。
[For use] The pulverized niobium lithium single crystal that can be used in the method of the present invention may be manufactured by any method as long as it is a single crystal, but it is preferably one that is qualitatively equivalent to the pool. . Therefore, it is preferable to use a material obtained by the pulling method, and even a defective product or a product left after cutting is acceptable. As for the pulverization method, the single crystal is cut into a wafer shape with a thickness of 0.5 to 1 mm using a slicer, etc., and then washed with water and an organic solvent, etc.
5 mm or less, preferably 3 to 3 mm using a mortar, ball mill, etc.
It is preferable that the particles be made into 51 square granules.

該粉砕品の大きさは必ずしも同等にする必要はなく、3
〜5mmが望ましく、形状はどのようなものでも差し支
えないが、ペレット状が望ましい。
The sizes of the crushed products do not necessarily have to be the same;
~5 mm is desirable, and any shape is acceptable, but pellets are preferred.

該皿としては高温と酸化に耐えられる材質が良く、特に
白金が好適である。該皿の上に該粉砕品を敷き詰めるに
当り、最密充填し、間隙なく詰めることが重要である。
The plate is preferably made of a material that can withstand high temperatures and oxidation, and platinum is particularly suitable. When placing the pulverized products on the plate, it is important to pack them as close as possible without any gaps.

該粉砕品の敷き詰めた厚さは1cII1以下が望ましく
、その幅はこの上に設置するプールの底面よりも大であ
ればよい。該皿上の該粉砕品を敷き詰めた上にプールを
設置するに当り、該プールを垂直に立てればよく、アニ
ーリングにおいては、このままの形態で炉中にて処理す
ればよい。また、プールの上部と該皿下部にリード線を
付け電流を流すことにより電気炉中で加熱し単一分域化
処理をすることができる。
The thickness of the pulverized product spread is desirably 1cII1 or less, and the width thereof may be larger than the bottom of the pool to be installed on top of the pulverized product. When installing a pool on top of the pulverized product on the plate, it is sufficient to stand the pool vertically, and for annealing, the pool may be treated as it is in a furnace. Further, by attaching lead wires to the upper part of the pool and the lower part of the dish and passing an electric current through the pool, it is possible to heat the pool in an electric furnace and perform a single-zone treatment.

[実施例−1] 引き上げ法で得られた二才ブ酸リチウム単結晶を内周刃
型スライサーで0。5腸lI〜IIIIII+の厚さの
ウェハーに切断し、表面汚れを水およびエタノールで洗
浄したのち、アルミナ乳鉢で31IIII1〜5mm四
方のペレット状とした。次に白金板で10cmX10c
mの皿を作成し、この中にペレットをlcmの厚さに敷
き詰めた。この皿を耐火レンガに載せ、リード線を皿と
耐火レンガの間にはさんで配線した。ベレットの上に8
0mmφX15C)ma+のブールを垂直に立て、プー
ルの上部にセラミック板をのせ、リード線が付いた白金
板を、このセラミック板の上にのせた。こうして電気炉
内へ設置し電流を流しながら1190℃で1時間保持し
たのち冷却しキュリー温度を通過させて単一分域化処理
を行った。この結果、クラックの発生は全く認められな
かった。
[Example-1] A two-year-old lithium butate single crystal obtained by the pulling method was cut into wafers with a thickness of 0.5mm to 1III+ using an internal blade slicer, and the surface dirt was washed with water and ethanol. Thereafter, it was made into a pellet of 1 to 5 mm square in an alumina mortar. Next, use a platinum plate to measure 10cm x 10cm.
A dish of 1 cm was prepared, and the pellets were spread in the dish to a thickness of 1 cm. This plate was placed on a fireproof brick, and the lead wire was wired between the plate and the firebrick. 8 on top of the beret
A boule of 0 mmφX15C)ma+ was stood vertically, a ceramic plate was placed on top of the pool, and a platinum plate with lead wires was placed on top of the ceramic plate. In this way, it was placed in an electric furnace and held at 1190° C. for 1 hour while flowing an electric current, and then cooled and passed through the Curie temperature to perform a single-sector treatment. As a result, no cracks were observed at all.

[実施例−2] リード線を配線しない以外は実施例−1と全く同様の白
金皿、ペレット、プールからなるサンプルを抵抗加熱炉
で約1200℃、2日間のアニールを行った。
[Example 2] A sample consisting of a platinum plate, pellets, and pool that was completely the same as in Example 1 except that no lead wire was wired was annealed at about 1200° C. for 2 days in a resistance heating furnace.

この結果、クラックの発生は全く認められなかった。As a result, no cracks were observed at all.

[発明の効果] 本発明方法を行うことにより、引き上げ法で得られたプ
ールをクラツク発生を起すことなくアニールおよび単一
分域化処理を行うことができる。
[Effects of the Invention] By carrying out the method of the present invention, the pool obtained by the pulling method can be subjected to annealing and single-area processing without causing cracks.

Claims (1)

【特許請求の範囲】[Claims] 引上げ法で得られたニオブ酸リチウム単結晶をニオブ酸
リチウム単結晶粉砕品が敷き詰められた皿の上に設置し
該ニオブ酸リチウム単結晶の単一分域化処理ならびにア
ニーリングを行うことを特徴とするニオブ酸リチウム単
結晶の製造方法。
A lithium niobate single crystal obtained by the pulling method is placed on a plate covered with pulverized lithium niobate single crystals, and the lithium niobate single crystal is subjected to single-sector treatment and annealing. A method for producing lithium niobate single crystal.
JP2013702A 1990-01-25 1990-01-25 Method for producing lithium niobate single crystal Expired - Lifetime JP2664508B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013702A JP2664508B2 (en) 1990-01-25 1990-01-25 Method for producing lithium niobate single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013702A JP2664508B2 (en) 1990-01-25 1990-01-25 Method for producing lithium niobate single crystal

Publications (2)

Publication Number Publication Date
JPH03218996A true JPH03218996A (en) 1991-09-26
JP2664508B2 JP2664508B2 (en) 1997-10-15

Family

ID=11840539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013702A Expired - Lifetime JP2664508B2 (en) 1990-01-25 1990-01-25 Method for producing lithium niobate single crystal

Country Status (1)

Country Link
JP (1) JP2664508B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0615005A3 (en) * 1993-03-09 1994-11-23 Nihon Kessho Kogaku Co Ltd Plate of crystalline lithium niobate, process for its preparation and method for evaluating it.
CN1324167C (en) * 2003-04-08 2007-07-04 住友金属矿山株式会社 Lithium tantanate substrate and its prepn. process
CN116200828A (en) * 2023-05-06 2023-06-02 天通控股股份有限公司 Preparation method of large-size lithium niobate crystal

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59227799A (en) * 1983-06-07 1984-12-21 Fujitsu Ltd Method for annealing oxide single crystal

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59227799A (en) * 1983-06-07 1984-12-21 Fujitsu Ltd Method for annealing oxide single crystal

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0615005A3 (en) * 1993-03-09 1994-11-23 Nihon Kessho Kogaku Co Ltd Plate of crystalline lithium niobate, process for its preparation and method for evaluating it.
US5437761A (en) * 1993-03-09 1995-08-01 Nihon Kessho Kogaku Co., Ltd. Lithium niobate crystal wafer, process for the preparation of the same, and method for the evaluation thereof
CN1324167C (en) * 2003-04-08 2007-07-04 住友金属矿山株式会社 Lithium tantanate substrate and its prepn. process
CN116200828A (en) * 2023-05-06 2023-06-02 天通控股股份有限公司 Preparation method of large-size lithium niobate crystal

Also Published As

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JP2664508B2 (en) 1997-10-15

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