JPH03218997A - Production of thin film of lithium niobate single crystal - Google Patents
Production of thin film of lithium niobate single crystalInfo
- Publication number
- JPH03218997A JPH03218997A JP34235789A JP34235789A JPH03218997A JP H03218997 A JPH03218997 A JP H03218997A JP 34235789 A JP34235789 A JP 34235789A JP 34235789 A JP34235789 A JP 34235789A JP H03218997 A JPH03218997 A JP H03218997A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- thin film
- lithium niobate
- lithium
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 title claims abstract description 109
- 239000013078 crystal Substances 0.000 title claims abstract description 107
- 239000010409 thin film Substances 0.000 title claims abstract description 98
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims abstract description 83
- 239000000155 melt Substances 0.000 claims abstract description 63
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims abstract description 57
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000010586 diagram Methods 0.000 claims abstract description 9
- 239000000203 mixture Substances 0.000 claims description 56
- 230000012010 growth Effects 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 15
- 229910001947 lithium oxide Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 15
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 abstract description 11
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 abstract description 11
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 abstract 4
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 abstract 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 description 47
- 239000011734 sodium Substances 0.000 description 47
- 229910052708 sodium Inorganic materials 0.000 description 41
- 230000003287 optical effect Effects 0.000 description 34
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 33
- 239000011777 magnesium Substances 0.000 description 31
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 28
- 229910052749 magnesium Inorganic materials 0.000 description 28
- 238000001816 cooling Methods 0.000 description 21
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 20
- 239000002994 raw material Substances 0.000 description 18
- 229910052744 lithium Inorganic materials 0.000 description 11
- 239000007791 liquid phase Substances 0.000 description 10
- 229910052758 niobium Inorganic materials 0.000 description 10
- 229910052697 platinum Inorganic materials 0.000 description 10
- 229910052720 vanadium Inorganic materials 0.000 description 10
- 238000005498 polishing Methods 0.000 description 9
- 239000000306 component Substances 0.000 description 8
- 239000010936 titanium Substances 0.000 description 6
- 229910019704 Nb2O Inorganic materials 0.000 description 5
- 230000004907 flux Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000002244 precipitate Substances 0.000 description 5
- 239000011651 chromium Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- JXGGISJJMPYXGJ-UHFFFAOYSA-N lithium;oxido(oxo)iron Chemical compound [Li+].[O-][Fe]=O JXGGISJJMPYXGJ-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910011763 Li2 O Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 description 1
- VCUFZILGIRCDQQ-KRWDZBQOSA-N N-[[(5S)-2-oxo-3-(2-oxo-3H-1,3-benzoxazol-6-yl)-1,3-oxazolidin-5-yl]methyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C1O[C@H](CN1C1=CC2=C(NC(O2)=O)C=C1)CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F VCUFZILGIRCDQQ-KRWDZBQOSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 206010025135 lupus erythematosus Diseases 0.000 description 1
- 229910001425 magnesium ion Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Landscapes
- Optical Integrated Circuits (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、薄膜導波路型SHG素子を始めとして、各種
光学材料に好適な膜厚のニオブ酸リチウムの製造方法に
関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a method for producing lithium niobate having a film thickness suitable for various optical materials including thin film waveguide type SHG elements.
(従来の技術)
近年の光応用技術の進展に伴って、レーザ光源の短波長
化が要求されている。(Prior Art) With the recent progress in optical application technology, there is a demand for shorter wavelength laser light sources.
これは、短波長化により、記録密度、感光感度を向上さ
せることができるためであり、光ディスク、レーザプリ
ンタ等の光機器分野への応用が考えられる。This is because recording density and photosensitivity can be improved by shortening the wavelength, and application to the field of optical equipment such as optical disks and laser printers can be considered.
このため、入射するレーザ光の波長を1/2に変換でき
る第2高調波発生(SHG)素子の研究が行なわれてき
た。For this reason, research has been conducted on second harmonic generation (SHG) elements that can convert the wavelength of incident laser light to 1/2.
かかる、第2高調波発生(SHG)素子としては、従来
高出力のガスレーザを光源として、非線形光学結晶のバ
ルク単結晶が用いられてきた。しかし、光ディスク装置
、レーザプリンタ等の装置を小型化する要求が強いこと
、ガスレーザは、光変調のため、外部に変調器が必要で
あるのに対して、半導体レーザは、変調器を必要とせず
、また安価であることなどのために、ガスレーザに代え
て半導体レーザが主として用いられるようになってきた
。As such a second harmonic generation (SHG) element, a bulk single crystal of a nonlinear optical crystal has conventionally been used using a high-output gas laser as a light source. However, there is a strong demand for miniaturization of devices such as optical disk devices and laser printers, and while gas lasers require an external modulator for optical modulation, semiconductor lasers do not require a modulator. Also, semiconductor lasers have come to be mainly used instead of gas lasers due to their low cost.
このため、数mW〜数十mWの低い光源出力で高い変換
効率を得る必要から、薄膜導波路型のSHG素子が必要
となってきた。Therefore, since it is necessary to obtain high conversion efficiency with a low light source output of several mW to several tens of mW, a thin film waveguide type SHG element has become necessary.
このような薄膜導波路型SHG素子用の非線形光学材料
としては、従来ニオブ酸リチウムバルク単結晶にTi等
を拡散させることにより、屈折率を変化させた層を導波
路としたものや、タンタル酸リチウム基板上に高周波ス
パッタ法により形成させたニオブ酸リチウム薄膜を導波
路としたものなどが知られているが、何れも結晶性に優
れたニオブ酸リチウム薄膜を得ることが困難で、高い変
換効率を得ることができなかった。Conventional nonlinear optical materials for such thin-film waveguide type SHG devices include waveguides made of a layer in which the refractive index is changed by diffusing Ti or the like into a lithium niobate bulk single crystal, and tantalum acid. Waveguides using a lithium niobate thin film formed by high-frequency sputtering on a lithium substrate are known, but in both cases it is difficult to obtain a lithium niobate thin film with excellent crystallinity, resulting in high conversion efficiency. I couldn't get it.
ところで、結晶性に優れた単結晶薄膜を製造する方法と
して、液相エピタキシャル法が好適であると考えられる
。Incidentally, a liquid phase epitaxial method is considered to be suitable as a method for producing a single crystal thin film with excellent crystallinity.
ニオブ酸リチウム薄膜を得るための液相エピタキシャル
法としては、例えば、
1)Applied Physics Let.ter
s, Vol. 26、No.l,January 1
975には、タンタル酸リチウムを基板として、L1,
0、V20.をフラックスとして、液相エピタキシャル
成長法により光導波路用ニオブ酸リチウム薄膜を形成し
て、光を導波させた例が記載されている。Examples of the liquid phase epitaxial method for obtaining a lithium niobate thin film include: 1) Applied Physics Let. ter
s, Vol. 26, No. l, January 1
975 uses lithium tantalate as a substrate, L1,
0, V20. An example is described in which a lithium niobate thin film for an optical waveguide is formed by a liquid phase epitaxial growth method using as a flux to guide light.
又、2)特公昭51−9720号公報には、タンタル酸
リチウムを基板とし、Li2O、■,0.をフラックス
として、液相エピタキシャル成長法により、光導波路用
ニオブ酸リチウム薄膜を形成する方法が記載されている
。2) Japanese Patent Publication No. 51-9720 discloses that lithium tantalate is used as a substrate, and Li2O, ■, 0. A method of forming a lithium niobate thin film for an optical waveguide by a liquid phase epitaxial growth method using as a flux is described.
更に、3)特公昭56−47160号公報には、Li2
O、V30.をフラックスとして、エピタキシャル成長
法により基板上に、Mgを含有したニオブ酸リチウム・
タンタル酸リチウム固溶体薄膜単結晶を形成する方法が
記載されている。Furthermore, 3) Japanese Patent Publication No. 56-47160 states that Li2
O, V30. As a flux, lithium niobate containing Mg was grown on the substrate by epitaxial growth.
A method for forming lithium tantalate solid solution thin film single crystals is described.
また、4)特公昭56−11650号公報には、Li2
O、■,0.をフラックスとして、エピタキシャル成長
法により基板上に、ニオブ酸リチウム・タンタル酸リチ
ウム固溶体薄膜単結晶を形成する方法が記載されている
。In addition, 4) Japanese Patent Publication No. 11650/1983 states that Li2
O, ■, 0. A method is described in which a thin film single crystal of a lithium niobate/lithium tantalate solid solution is formed on a substrate by an epitaxial growth method using as a flux.
しかしながら、従来知られた液相エピタキシャル法では
、結晶性に優れたニオブ酸リチウム単結晶が、タンタル
酸リチウム基板上に得られないばかりでなく、特にSH
G素子を製造するのに必要な膜厚のニオブ酸リチウム単
結晶を得ることが困難であり、薄膜導波路型のSHG素
子が実用化されたという例は知られていない。However, in the conventionally known liquid phase epitaxial method, not only is it not possible to obtain a lithium niobate single crystal with excellent crystallinity on a lithium tantalate substrate, but also
It is difficult to obtain a lithium niobate single crystal with a film thickness necessary for manufacturing a G element, and there are no known examples of a thin film waveguide type SHG element being put into practical use.
前記薄膜導波路型のSHG素子を製造するのに必要な膜
厚とは、すなわち入射させるレーザ光と第2高調波との
位相整合を行なうため、波長λの基本波長光と波長λ/
2の第2高調波との実効屈折率を一致させることのでき
る膜厚のことであり、特にタンタル酸リチウム基板上に
形成させたニオブ酸リチウム単結晶薄膜を用いて、半導
体レーザ用SHG素子を作成する場合、実効屈折率を一
致させるためには、研磨により除去される分を考慮する
と、5μm以上の厚さのニオブ酸リチウム薄膜が必要で
ある。The film thickness required to manufacture the thin film waveguide type SHG element is, in other words, in order to phase match the incident laser light and the second harmonic, the fundamental wavelength light of wavelength λ and the wavelength λ/
This refers to the film thickness that can match the effective refractive index with the second harmonic of When creating a lithium niobate thin film, in order to match the effective refractive index, a lithium niobate thin film with a thickness of 5 μm or more is required, considering the amount removed by polishing.
(発明が解決しようとする課題)
以上のように、これまではタンタル酸リチウム基板上に
SHG素子の光学デバイスを作成するために必要な膜厚
のニオブ酸リチウム単結晶薄膜を実用的に製造する方法
はなかった。(Problems to be Solved by the Invention) As described above, until now it has not been possible to practically produce a lithium niobate single crystal thin film having the thickness necessary to create an SHG element optical device on a lithium tantalate substrate. There was no way.
そこで、本発明者等は種々研究した結果、このような問
題が生ずるのは、ニオブ酸リチウム単結晶薄膜の格子定
数が、タンタル酸リチウム基板の格子定数より小さく、
液相エピタキシャル成長の結果、得られたニオブ酸リチ
ウム単結晶薄膜の結晶格子に歪が発生するからであると
考え、これを解決するために、タンタル酸リチウム基板
の格子定数とニオブ酸リチウム単結晶薄膜の格子定数を
近付ければよいことに想達した。As a result of various studies, the inventors of the present invention have found that this problem occurs because the lattice constant of the lithium niobate single crystal thin film is smaller than the lattice constant of the lithium tantalate substrate.
We believe that this is because distortion occurs in the crystal lattice of the obtained lithium niobate single crystal thin film as a result of liquid phase epitaxial growth.To solve this problem, we investigated the lattice constant of the lithium tantalate substrate and the lithium niobate single crystal thin film. It was concluded that it would be better to make the lattice constants of
本発明者等は、ニオブ酸リチウム単結晶にナトリウムと
マグネシウムを含有させることにより、ニオブ酸リチウ
ム単結晶の光損傷(強い光を照射すると結晶の屈折率が
変化すること)を防止して、なお且つ、ニオブ酸リチウ
ム基板の格子定数を調整してタンタル酸リチウム基板の
格子定数に整合(格子整合)させ、S}IG素子などの
光学デバイスを作成するために必要な膜厚のニオブ酸リ
チウム単結晶を実用的に製造できることができることを
全く新規に知見し、本発明を完成するに至った。The present inventors have discovered that by incorporating sodium and magnesium into a lithium niobate single crystal, the lithium niobate single crystal can be prevented from being photodamaged (the refractive index of the crystal changes when irradiated with strong light), and In addition, the lattice constant of the lithium niobate substrate is adjusted to match (lattice match) the lattice constant of the lithium tantalate substrate, and the lithium niobate monolayer is made with a film thickness necessary to create an optical device such as an S}IG element. The inventors have made a completely new discovery that crystals can be practically produced, and have completed the present invention.
ただ、Journal of Crystal Gro
wth 54(1981)572−576に、ニオブ酸
リチウムにナトリウムを添加し、液相エピタキシャル成
長法にょりY一カットのニオブ酸リチウム基板上に膜厚
2oμmのナトリウム含有ニオブ酸リチウム薄膜単結晶
を形成した例が記載されている。However, Journal of Crystal Gro
wth 54 (1981) 572-576, a sodium-containing lithium niobate thin film single crystal with a film thickness of 2 μm was formed on a Y-cut lithium niobate substrate by liquid phase epitaxial growth by adding sodium to lithium niobate. Examples are given.
また、Journal of Crystal Gro
wth 84(1987)402−412にはニオブ酸
リチウムにナトリウムを添加し、液相エピタキシャル成
長法にょりYカットのタンタル酸リチウム基板上にナト
リウム含有ニオブ酸リチウム薄膜単結晶を形成した例が
記載されている。Also, Journal of Crystal Gro
Wth 84 (1987) 402-412 describes an example of adding sodium to lithium niobate and forming a sodium-containing lithium niobate thin film single crystal on a Y-cut lithium tantalate substrate by liquid phase epitaxial growth. There is.
しかし、これらの文献にはナトリウム含有によりニオブ
酸リチウム単結晶の格子定数が変化することは記載され
ているものの、SAW(Surface Acoust
ic Wave)デバイスに関する技術であり、光学特
性やタンタル酸リチウム基板と格子整合させると光学特
性に優れた膜が得られることについては何ら記載されて
いない。又これらの文献に示されたニオブ酸リチウム単
結晶薄膜はSAiilデバイス用であり、前者の文献に
記載された薄膜は基板にニオブ酸リチウムを用いること
、又後者の文献に記載の薄膜は、タンタル酸リチウム基
板に形成させているものの薄膜と基板との格子整合がな
されていないなどにより、何れも本願の目的とする光学
材料としては使用することができない。However, although these documents describe that the lattice constant of lithium niobate single crystal changes due to sodium content, SAW (Surface Acoust
ic Wave) device, and there is no mention of optical properties or the fact that a film with excellent optical properties can be obtained by lattice matching with a lithium tantalate substrate. Furthermore, the lithium niobate single crystal thin films shown in these documents are for SAiil devices; the thin films described in the former document use lithium niobate as a substrate, and the thin films described in the latter document use tantalum. Although the thin film is formed on a lithium oxide substrate, there is no lattice matching between the thin film and the substrate, so none of them can be used as the optical material aimed at in the present application.
又、米国特許4093781号には、リチウムフェライ
ト膜を基板上に液相エピタキシャル成長法で形成する際
、リチウムをナトリウムで置換し、格子定数を基板に近
づけ、歪のないリチウムフェライト膜を形成する方法が
記載されている。Furthermore, US Pat. No. 4,093,781 discloses a method in which when forming a lithium ferrite film on a substrate by liquid phase epitaxial growth, lithium is replaced with sodium to bring the lattice constant closer to that of the substrate, thereby forming a strain-free lithium ferrite film. Are listed.
しかしながら、これは、リチウムフェライトに関する技
術であって、本願の目的とする光学材料用として使用す
ることはできない。However, this is a technology related to lithium ferrite, and cannot be used for optical materials, which is the object of the present application.
(課題を解決するための手段)
本発明は、溶融体にタンタル酸リチウム基板を接触させ
、エピタキシャル成長により、ニオブ酸リチウム単結晶
薄膜を育成させる方法であって、溶融体トシテ、主トL
,テLi,0、■,0.、Nb,0,、Na,0、Mg
Oからなり、Na,0とMgOを除いた前記Li,0、
v20,、Nb,0,(7)組成範囲が、Li2O−V
2O,−Nb2O.(7)3?分系の三角図において、
A(88.90, 2.22, 8.88)、B(55
.00, 43.00; 2.00)、C(46,50
, 51.50, 2.00)、D(37.50, 5
.00, 57.50)の4組成点で囲まれる領域で示
される組成割合にあるものを用い、ニオブ酸リチウム単
結晶薄膜のa軸の格子定数とタンタル酸リチウム基板の
a軸の格子定数を整合させることを特徴とするニオブ酸
リチウム単結晶薄膜の製造方法からなる。(Means for Solving the Problems) The present invention is a method of bringing a lithium tantalate substrate into contact with a melt and growing a lithium niobate single crystal thin film by epitaxial growth.
,TeLi,0,■,0. , Nb,0, , Na,0, Mg
The above Li,0 consisting of O and excluding Na,0 and MgO,
v20,, Nb,0, (7) composition range is Li2O-V
2O, -Nb2O. (7) 3? In the trigonometric diagram of the fractional system,
A (88.90, 2.22, 8.88), B (55
.. 00, 43.00; 2.00), C (46,50
, 51.50, 2.00), D(37.50, 5
.. 00, 57.50), the a-axis lattice constant of the lithium niobate single crystal thin film and the a-axis lattice constant of the lithium tantalate substrate were matched. A method for producing a lithium niobate single crystal thin film characterized by:
(作用)
本発明によれば、タンタル酸リチウム基板上にニオブ酸
リチウム単結晶薄膜を析出させる際、エピタキシャル成
長法に用いる溶融体として、主とシテ、L110、V2
O■Nb.O,、Na2O, MgOがらなり、Na2
OとMgOを除いた前記Li,Q、V, O,、Nb2
O.の組成範囲が、Li , O−V, O, −Nb
, O,の3成分系の三角図におイテ、A(88.90
, ’2.22, 8.88)、B(55.00, 4
3.00,2.00)、C(46.50, 5].50
, 2.00)、D(37.50, 5,00,57.
50)の4組成点で囲まれる領域で示される組成割合に
あるものを用いることにより、ニオブ酸リチウム単結晶
薄膜のa軸の格子定数とタンタル酸リチウム基板のa軸
の格子定数を整合させることが必要である。(Function) According to the present invention, when depositing a lithium niobate single crystal thin film on a lithium tantalate substrate, the melts used in the epitaxial growth method are mainly Cite, L110, and V2.
O■Nb. O,, Na2O, MgO, Na2
The above Li, Q, V, O,, Nb2 excluding O and MgO
O. The composition range of Li, O-V, O, -Nb
, O, in the triangular diagram of the three-component system, ite, A (88.90
, '2.22, 8.88), B (55.00, 4
3.00, 2.00), C(46.50, 5].50
, 2.00), D(37.50, 5,00,57.
Matching the a-axis lattice constant of the lithium niobate single crystal thin film and the a-axis lattice constant of the lithium tantalate substrate by using a composition having the composition ratio shown in the region surrounded by the four composition points in 50). is necessary.
本発明においてタンタル酸リチウムを基板として用いる
理由は、前記タンタル酸リチウム基板の結晶系が、ニオ
ブ酸リチウム単結晶に類似しておりエピタキシャル成長
させやすく、更に前記タンタル酸リチウム基板は市販さ
れているため、品質のよいものが安定して入手できるか
らである。The reason why lithium tantalate is used as a substrate in the present invention is that the crystal system of the lithium tantalate substrate is similar to a lithium niobate single crystal and easy to grow epitaxially, and furthermore, the lithium tantalate substrate is commercially available. This is because products of good quality can be stably obtained.
又、前記タンタル酸リチウム基板としては、種々の元素
を含有させたもの、あるいは表面を化学エッチングした
ものなどを用いることができる。Further, as the lithium tantalate substrate, one containing various elements or one whose surface has been chemically etched can be used.
前記溶融体として、Li2O、v30.、Nb2O,、
Na, O、MgOが必要な理由を以下に説明する。As the melt, Li2O, v30. ,Nb2O,,
The reason why Na, O, and MgO are necessary will be explained below.
前記Li2O, V2O,はフラックスとして作用して
、ニオブ酸リチウム単結晶の液相エピタキシャル成長を
実現できる。The Li2O and V2O act as a flux to realize liquid phase epitaxial growth of a lithium niobate single crystal.
又、前記Na,0、MgOを溶融体成分として用いるこ
とにより、ナトリウムとマグネシウムをニオブ酸リチウ
ム単結晶薄膜中に含有させることができる。Furthermore, by using the aforementioned Na, 0, and MgO as melt components, sodium and magnesium can be contained in the lithium niobate single crystal thin film.
前記ナトリウムとマグネシウムをニオブ酸リチウム単結
晶薄膜に含有させることにより、ニオブ酸リチウム単結
晶薄膜のa軸の格子定数を大きくすることができるため
、ナトリウムとマグネシウムの組成を調整することによ
り、ニオブ酸リチウム単結晶薄膜のa軸の格子定数を、
タンタル酸リチウム基板のa軸の格子定数に合わせるこ
とができ、厚い膜厚を有し、光学的特性に優れたニオブ
酸リチウム単結晶薄膜を得ることができる。By incorporating sodium and magnesium into the lithium niobate single crystal thin film, the a-axis lattice constant of the lithium niobate single crystal thin film can be increased. The a-axis lattice constant of the lithium single crystal thin film is
It is possible to obtain a lithium niobate single crystal thin film that can be matched to the a-axis lattice constant of the lithium tantalate substrate, has a large film thickness, and has excellent optical properties.
一般に、ニオブ酸リチウムのa軸の格子定数は、タンタ
ル酸リチウムのa軸の格子定数より小さいため、タンタ
ル酸リチウム基板とニオブ酸リチウム単結晶薄膜のa軸
の格子定数を合わせるためには、ニオブ酸リチウムのa
軸の格子定数を大きくすることが望ましい。Generally, the a-axis lattice constant of lithium niobate is smaller than that of lithium tantalate, so in order to match the a-axis lattice constants of the lithium tantalate substrate and the lithium niobate single crystal thin film, it is necessary to lithium oxide a
It is desirable to increase the lattice constant of the axis.
ナトリウムとマグネシウムを同時に含有させる理由は、
マグネシウムのみではタンタル酸リチウム基板とニオブ
酸リチウム単結晶薄膜を格子整合させることができず、
又ナトリウムのみでは、格子整合は可能であるが、光損
傷を防止することができないからである。The reason for containing sodium and magnesium at the same time is
Magnesium alone cannot lattice match the lithium tantalate substrate and the lithium niobate single crystal thin film.
Moreover, although lattice matching is possible with sodium alone, optical damage cannot be prevented.
マグネシウムには光損傷を防止する効果があるため、光
学材料には好適である。Since magnesium has the effect of preventing optical damage, it is suitable for optical materials.
前記ナトリウム、マグネシウムがニオブ酸リチウム単結
晶薄膜中に含有されることにより、a軸の格子定数が大
きくなるが、これは、ナトリウムとマグネシウムのイオ
ン或いは原子が、ニオブ酸リチウム結晶格子にドーブさ
れるか、或いはニオブ酸リチウム結晶格子を構成するイ
オン或いは原子と置換されることに起因する。When the sodium and magnesium are contained in the lithium niobate single crystal thin film, the a-axis lattice constant increases, but this is because sodium and magnesium ions or atoms are doped into the lithium niobate crystal lattice. Or, it is caused by substitution with ions or atoms constituting the lithium niobate crystal lattice.
又、本発明におけるNa2OとMgOを除いたLi2O
,■.0.、Nb2O,(7)組成範囲トL テLi2
O−V2O.−Nb2O, (7)3成分系の三角図に
おいて、A(88.90, 2.22, 8.88)、
B(55.00, 43.00, 2.00)、C(4
6.50, 51.50, 2.00)、D(37,5
0, 5.00, 57.50)の4組成点で囲まれる
領域で示される組成割合が必要とされる理由は、この範
囲で得られるニオブ酸リチウム薄膜の光学的特性が優れ
ており、なかでも光伝搬損失が低く、良質なニオブ酸リ
チウム単結晶薄膜を得る二とができるからである。Moreover, Li2O excluding Na2O and MgO in the present invention
, ■. 0. , Nb2O, (7) Composition range
O-V2O. -Nb2O, (7) In the triangular diagram of the three-component system, A(88.90, 2.22, 8.88),
B (55.00, 43.00, 2.00), C (4
6.50, 51.50, 2.00), D(37,5
The reason why the composition ratio shown in the region surrounded by the four composition points (0, 5.00, 57.50) is required is that the optical properties of the lithium niobate thin film obtained in this range are excellent, and However, the optical propagation loss is low and it is possible to obtain a high quality lithium niobate single crystal thin film.
前記、L120、V10.、Nb,0,の組成範囲は、
更に、Li,0−V,0,−Nb,0, (7)3成分
系ノ三角図ニおイテ、E(69.85, 21.33,
8.82)、F(49.95, 45.02, 5.
03)、G(44.13, 16.76, 39.11
)、H(54.72, 11,12, 34.16)の
4組成点で囲まれる領域で示される組成割合であること
が好ましく、LiオO−Vオ0,−Nb,0,の3成分
系の三角図において、I(57.43, 35,05,
7.52)、J(49.95, 42.53, 7.
52)、K(47.36, 26.32, 26.32
)、L(56.38, 17.91, 25.71)の
4組成点で囲まれる領域で示される組成割合であること
が好適である。Said, L120, V10. , the composition range of Nb,0, is
Furthermore, Li,0-V,0,-Nb,0, (7) Triangular diagram of the three-component system, E(69.85, 21.33,
8.82), F (49.95, 45.02, 5.
03), G (44.13, 16.76, 39.11
), H (54.72, 11, 12, 34.16), and the composition ratio is preferably expressed by a region surrounded by four composition points: LiO, O-Vo, -Nb, 0, In the triangular diagram of the component system, I(57.43, 35,05,
7.52), J (49.95, 42.53, 7.
52), K (47.36, 26.32, 26.32
), L(56.38, 17.91, 25.71).
本発明におけるNa2Oの組成割合として、モル比でN
a2O/Li2Oが、2.0798. 0 〜93.
576.5を満たす範囲であることが必要である理由は
、前記モル比の範囲からNa2Oの割合が外れる場合、
ニオブ酸リチウム単結晶薄.膜とタンタル酸リチウム基
板を格子整合させることができないからである。As the composition ratio of Na2O in the present invention, the molar ratio is N
a2O/Li2O is 2.0798. 0 to 93.
The reason why it is necessary that the range satisfies 576.5 is that if the proportion of Na2O deviates from the above molar ratio range,
Lithium niobate single crystal thin. This is because the film and the lithium tantalate substrate cannot be lattice matched.
前記、Na2Oの組成割合として、モル比でNa2O/
Li2Oが、7.4792.6〜80.0/20.0を
満たす範囲であることが好ましく、16.7783.3
〜48.4751,6を満たす範囲であることが好適で
ある。As mentioned above, as the composition ratio of Na2O, the molar ratio is Na2O/
It is preferable that Li2O is in a range satisfying 7.4792.6 to 80.0/20.0, and 16.7783.3
It is preferable that the range satisfies 48.4751.6 to 48.4751.6.
又、MgOの組成割合として、モル比でMgO/ニオブ
酸リチウムが、0. 1/99,9 〜25,0/75
, Oを満たす組成範囲であることが望ましい。前記ニ
オブ酸リチウムとは溶融体組成から析出可能なニオブ酸
リチウムの理論量を意味する。Further, as the composition ratio of MgO, the molar ratio of MgO/lithium niobate is 0. 1/99,9 ~25,0/75
, O is desirable. The above-mentioned lithium niobate means the theoretical amount of lithium niobate that can be precipitated from the composition of the melt.
この理由は、前記範囲よりMgOの割合が低い場合は、
Mgの光損傷防止効果が不充分で、前記範囲よりMgO
の割合が高い場合は、ニオブ酸マグネシウムの結晶が析
出して、ニオブ酸リチウム単結晶薄膜が得られないから
である。The reason for this is that when the proportion of MgO is lower than the above range,
The effect of preventing Mg from optical damage is insufficient, and MgO
This is because if the ratio is high, crystals of magnesium niobate will precipitate and a lithium niobate single crystal thin film cannot be obtained.
更に、MgOの組成割合として、モル比でMgO /ニ
オブ酸リチウムが、0.77100〜9.07100を
満たす範囲であることが好ましく、3.57100 〜
6.07100を満たす範囲であることが好適である。Further, as for the composition ratio of MgO, it is preferable that the molar ratio of MgO/lithium niobate is in a range of 0.77100 to 9.07100, and 3.57100 to 9.07100.
It is preferable that the range satisfies 6.07100.
本発明における原料組成物は、その酸化物として組成割
合が前記組成範囲内になるように選択されるが、原料成
分としては酸化物、もしくは加熱により酸化物に変化す
る化合物が望ましく、例えば、Na,CO,, Nbl
lO,、Li,Co,、■.0.、MgO%NaVO,
、NaNbO,、LiVO.、LiNbO,の組成物な
どが挙げられる。The raw material composition in the present invention is selected so that the composition ratio of its oxide is within the above composition range, but the raw material component is preferably an oxide or a compound that changes into an oxide upon heating, such as Na , CO,, Nbl
lO,, Li, Co,, ■. 0. , MgO%NaVO,
, NaNbO, , LiVO. , LiNbO, and the like.
前記原料成分は、600〜1300℃で加熱溶融される
ことが望ましい。又、前記加熱溶融は、空気雰囲気化或
いは酸化雰囲気化で行なうことが望ましい。It is desirable that the raw material components are heated and melted at 600 to 1300°C. Further, it is preferable that the heating and melting is performed in an air atmosphere or an oxidizing atmosphere.
本発明によれば、前記溶融体を過冷却状態とした後、タ
ンタル酸リチウム基板を接触させ、育成させることが望
ましい。According to the present invention, it is desirable that after the melt is brought into a supercooled state, a lithium tantalate substrate is contacted and grown.
前記溶融体を過冷却状態とするための冷却速度は、0.
5〜300℃1時であることが望ましい。The cooling rate for bringing the melt into a supercooled state is 0.
It is desirable that the temperature is 5 to 300°C.
前記育成のための温度は、600〜1250℃であるこ
とが望ましい。この理由はニオブ酸リチウムの融点が1
250℃であり、これ以上の温度では、結晶が析出せず
、又、600℃は、溶融剤(Li2O−V2O.)の融
点であるため、これより低い温度では、原料を溶融体と
することができないためである。The temperature for the growth is preferably 600 to 1250°C. The reason for this is that the melting point of lithium niobate is 1
The temperature is 250°C, and at temperatures higher than this, crystals will not precipitate, and since 600°C is the melting point of the melting agent (Li2O-V2O.), at temperatures lower than this, the raw material cannot be made into a melt. This is because it is not possible.
本発明においては、ニオブ酸リチウム単結晶薄膜の成長
面として、タンタル酸リチウム基板の(0001)面を
使用することが望ましい。In the present invention, it is desirable to use the (0001) plane of the lithium tantalate substrate as the growth plane of the lithium niobate single crystal thin film.
前記タンタル酸リチウム基板の(0001)面とは、タ
ンタル酸リチウムのC軸に垂直な面を指す。ニオブ酸リ
チウム単結晶薄膜の成長面として、タンタル酸リチウム
基板の(0001)面を使用することが望ましい理由は
、前記タンタル酸リチウムは、結晶構造が六方晶(第1
図参照)であり、前記(0001)面はa軸のみで構成
されるため、前記(0001)面を成長面とすることで
、ニオブ酸リチウム単結晶薄膜のa軸の格子定数を変え
るだけで、格子整合させることができるからである。The (0001) plane of the lithium tantalate substrate refers to a plane perpendicular to the C axis of lithium tantalate. The reason why it is desirable to use the (0001) plane of the lithium tantalate substrate as the growth plane of the lithium niobate single crystal thin film is that the crystal structure of the lithium tantalate is hexagonal (first
(see figure), and since the (0001) plane consists of only the a-axis, by using the (0001) plane as the growth plane, it is possible to simply change the lattice constant of the a-axis of the lithium niobate single crystal thin film. This is because lattice matching can be achieved.
また、本発明においては、前記ニオブ酸リチウム単結晶
薄膜の格子定数(a軸)を前記ニオブ酸リチウム単結晶
薄膜の格子定数(a軸)は、前記タンタル酸リチウム基
板の99.81〜100.07%にすることが望ましい
。Further, in the present invention, the lattice constant (a-axis) of the lithium niobate single crystal thin film is 99.81 to 100. It is desirable to set it to 0.7%.
前記格子定数の範囲を外れた場合、タンタル酸リチウム
基板とニオブ酸リチウム単結晶薄膜のa軸の格子の相違
が大きくなり、光学材料として使用可能な光学特性に優
れたニオブ酸リチウム単結晶薄膜を充分に厚く形成する
ことができないからである。When the lattice constant is outside the above range, the difference in the a-axis lattice between the lithium tantalate substrate and the lithium niobate single crystal thin film becomes large, making it difficult to produce a lithium niobate single crystal thin film with excellent optical properties that can be used as an optical material. This is because it cannot be formed sufficiently thick.
さらに前記ニオブ酸リチウム単結晶薄膜の格子定数(a
軸)は、前記タンタル酸リチウム基板の99.92〜1
00.03%にすることが好適である。Furthermore, the lattice constant (a
axis) is 99.92 to 1 of the lithium tantalate substrate.
It is preferable to set it to 00.03%.
前記タンタル酸リチウム基板のa軸の格子定数が、5.
1538人の場合、ニオブ酸リチウム単結晶のa軸の格
子定数は,5.150〜5,155Aの範囲が好適であ
る。The a-axis lattice constant of the lithium tantalate substrate is 5.
In the case of 1538 people, the a-axis lattice constant of the lithium niobate single crystal is preferably in the range of 5.150 to 5,155A.
前記育成の際には、タンタル酸リチウム基板を回転させ
ることが望ましい。これは、タンタル酸リチウム基板を
回転させることにより、特性及び膜厚が、均一な結晶が
できるからである。During the growth, it is desirable to rotate the lithium tantalate substrate. This is because by rotating the lithium tantalate substrate, crystals with uniform properties and film thickness can be formed.
又、前記タンタル酸リチウム基板は、少なくとも片面は
、光学研磨されていることが望ましい。Further, it is desirable that at least one side of the lithium tantalate substrate is optically polished.
本発明においてはタンタル酸リチウム基板と溶融体との
接触時間、溶融体の温度を適当に選択することにより、
タンタル酸リチウム基板上に析出するニオブ酸リチウム
基板上に析出するニオブ酸リチウム単結晶薄膜の厚みを
制御することができる。In the present invention, by appropriately selecting the contact time between the lithium tantalate substrate and the melt and the temperature of the melt,
The thickness of the lithium niobate single crystal thin film deposited on the lithium niobate substrate that is deposited on the lithium tantalate substrate can be controlled.
本発明においては、溶融体組成として、Li2O、■.
0.、Nb2O,、Na, OとMgOの他に、Nd%
Rh, Zn%Ni,Co. Ti, Crなどから選
ばれる元素の酸化物を使用することができる。In the present invention, the melt composition includes Li2O, .
0. ,Nb2O,,Na,O and MgO, as well as Nd%
Rh, Zn%Ni, Co. Oxides of elements selected from Ti, Cr, etc. can be used.
前記Nd, Rh, Zn, Ni, Co, Ti,
Crなどの元素を添加することにより、ニオブ酸リチ
ウム単結晶薄膜の屈折率や格子定数を変えることができ
る。Said Nd, Rh, Zn, Ni, Co, Ti,
By adding elements such as Cr, the refractive index and lattice constant of the lithium niobate single crystal thin film can be changed.
特に、前記Tiは、ニオブ酸リチウム単結晶の格子定数
を小さくすることができる。In particular, the Ti can reduce the lattice constant of the lithium niobate single crystal.
以上のようにして、本発明の製造方法により得られるニ
オブ酸リチウム単結晶薄膜は、タンタル酸リチウム基板
と一体となっており、格子の歪や結晶の欠陥が極めて少
なく、クラックなどのない高品質の膜であり、光導波路
として好適な性質を持ち、特に光伝搬損失が低く、なお
且つ従来よりも厚い膜が得られるため、薄膜導波路型S
}IG素子の構成材料として最適であるだけでなく、光
偏向器、光変調器、マルチモードの光デバイスに使用で
きる。As described above, the lithium niobate single crystal thin film obtained by the production method of the present invention is integrated with the lithium tantalate substrate, has extremely few lattice distortions and crystal defects, and is of high quality without cracks. It is a thin film waveguide type S because it has properties suitable for an optical waveguide, especially low optical propagation loss, and can obtain a thicker film than conventional ones.
}Not only is it optimal as a constituent material for IG elements, but it can also be used for optical deflectors, optical modulators, and multimode optical devices.
次に本発明の実施例について説明する。Next, examples of the present invention will be described.
実施例l
(1)Na,C帆44.4モル%、Li,CO344.
4モル%、V, O,5.6モル%、Nb,0.5.6
モル%、MgOを前記原料物組成から析出可能なLiN
bO,の理論量に対して5モル2添加(MgO/LiN
bO,・5/95) L,て混合物を白金ルッポにいれ
、エピタキシャル成長育成装置中で空気雰囲気下で11
00℃まで加熱してルッポの内容物を溶解させた。Example 1 (1) Na, C 44.4 mol%, Li, CO 344.
4 mol%, V, O, 5.6 mol%, Nb, 0.5.6
Mol%, LiN that can precipitate MgO from the raw material composition
5 mol 2 added to the theoretical amount of bO (MgO/LiN
bO,・5/95) L, the mixture was placed in a platinum lupus and heated in an epitaxial growth apparatus under an air atmosphere for 11 minutes.
The contents of the Luppo were dissolved by heating to 00°C.
(2)溶融体を1時間当りに60℃の冷却速度で840
℃まで徐冷した後、タンタル酸リチウム単結晶の(00
01)面を光学研磨した後、化学エッチングしたものを
基板材料として溶融体中にloOrpmで回転させなが
ら15分間浸漬した。(2) Cool the melt at a cooling rate of 60°C per hour to 840°C.
After slowly cooling to ℃, lithium tantalate single crystal (00
01) After optically polishing the surface, the chemically etched material was used as a substrate material and immersed in the melt for 15 minutes while rotating at loOrpm.
(3)溶液体から基板材料を引き上げ、回転数100O
rpmで30秒間溶融体上で溶融体を振り切った後、室
温まで徐冷し、基板材料上に約19μmの厚さのナトリ
ウム、マグネシウム含有ニオブ酸リチヴム単結晶薄膜を
得た。(3) Pull up the substrate material from the solution and rotate at 100 O.
After shaking the melt over the melt at rpm for 30 seconds, the melt was slowly cooled to room temperature to obtain a lithium niobate single crystal thin film containing sodium and magnesium with a thickness of about 19 μm on the substrate material.
(4)得られたニオブ酸リチウムの単結晶薄膜中に含有
されていたナトリウム、マグネシウムの量は、それぞれ
1モル%、6モル%であった。又、薄膜の格子定数(a
軸)は5.]53A、入射光波長1.15μmで測定し
た屈折率は、2.230±0.001であった。(4) The amounts of sodium and magnesium contained in the obtained single crystal thin film of lithium niobate were 1 mol% and 6 mol%, respectively. In addition, the lattice constant (a
axis) is 5. ] 53A, the refractive index measured at an incident light wavelength of 1.15 μm was 2.230±0.001.
実施例2
(1)Li,Co, 69%、V,0.16モJL,%
%Nb,0.15モル%、Na, Co.を前記原料物
組成から析出可能なLiNbOsの理論量に対して、6
0モル%添加(Na2O/Li2O=45/69)、M
gOを前記原料物組成から析出可能なLiNbO.の理
論量に対して、6モAt%添加(MgO/LiNbO,
・6/94)、Cr2O,を前記原料物組成から析出
可能なLiNbO,の理論量に対して、2モル%添加し
た混合物を白金ルツボにいれ、エピタキシャル成長育成
装置中で空気雰囲気下で1100℃まで加熱してルッポ
の内容物を溶解させた。Example 2 (1) Li, Co, 69%, V, 0.16MoJL,%
%Nb, 0.15 mol%, Na, Co. is 6 for the theoretical amount of LiNbOs that can be precipitated from the raw material composition.
0 mol% addition (Na2O/Li2O=45/69), M
LiNbO.gO can be precipitated from the raw material composition. 6 moAt% addition (MgO/LiNbO,
・6/94) A mixture in which 2 mol% of Cr2O was added to the theoretical amount of LiNbO that can be precipitated from the raw material composition was placed in a platinum crucible, and the mixture was heated to 1100°C in an air atmosphere in an epitaxial growth growth apparatus. Heat was applied to dissolve the contents of the Luppo.
(2)溶融体を1時間当り60℃の冷却速度で954℃
まで徐冷した後、タンタル酸リチウム単結晶の(000
1)面を光学研磨した後、化学エッチングしたものを基
板材料として溶融体中にIOOrpmで回転させながら
IO分間浸漬した。(2) Cool the melt to 954°C at a cooling rate of 60°C per hour.
After slowly cooling the lithium tantalate single crystal to (000
1) After the surface was optically polished, the chemically etched material was immersed as a substrate material in a melt for IO minutes while rotating at IOO rpm.
(3)溶融体から基板材料を引き上げ、回転数100O
rpmで30秒間溶融体上で溶融体を振り切った後、室
温まで徐冷し、基板材料に約11μmの厚さのクロム、
ナトリウム、マグネシウム含有ニオブ酸リチウム単結晶
薄膜を得た。(3) Pull up the substrate material from the melt and rotate at 100O.
After shaking the melt over the melt at rpm for 30 seconds, it was slowly cooled to room temperature, and the substrate material was coated with chromium with a thickness of about 11 μm.
A lithium niobate single crystal thin film containing sodium and magnesium was obtained.
(4)得られたニオブ酸リチウムの単結晶薄膜中に含有
されていたクロム、ナトリウム、マグネシウムの量は、
それぞれ2モル%、2モル%及び7モル%であった。又
、薄膜の格子定数(a軸)は5, 155人、入射光波
長1.15μmで測定した屈折率は、2.236±0.
001であった。(4) The amounts of chromium, sodium, and magnesium contained in the single crystal thin film of lithium niobate obtained were:
They were 2 mol%, 2 mol%, and 7 mol%, respectively. The lattice constant (a-axis) of the thin film is 5,155, and the refractive index measured at an incident light wavelength of 1.15 μm is 2.236±0.
It was 001.
実施例3
(1 )Na, Cos44.4モル%、Li,Co,
37.8モル%、■10.15モル%、Nb,0,
2.8モル%、MgOを原料物組成から析出可能なLi
NbO.の理論量に対して、3モル%添加(MgO /
L i NbO ,・3/97)、Tie,を原料物
組成から析出可能なLiNbO,の理論量に対して、1
5モル%添加した混合物を白金ルツボにいれ、エピタキ
シャル成長育成装置中で空気雰囲気下で1100℃まで
加熱してルツボの内容物を溶解した。Example 3 (1) Na, Cos 44.4 mol%, Li, Co,
37.8 mol%, ■10.15 mol%, Nb,0,
2.8 mol%, Li that can precipitate MgO from the raw material composition
NbO. Addition of 3 mol% (MgO/
LiNbO, 3/97), Tie, is 1 for the theoretical amount of LiNbO that can be precipitated from the raw material composition.
The mixture to which 5 mol% was added was placed in a platinum crucible and heated to 1100° C. in an air atmosphere in an epitaxial growth and growth apparatus to melt the contents of the crucible.
(2)溶融体を1時間当り60℃の冷却速度で780℃
まで徐冷した後、タンタル酸リチウム単結晶の(000
l)面を光学研磨した後、化学エッチングしたものを基
板材料として溶融体中に100rpmで回転させながら
8分間浸漬した。(2) Cool the melt to 780°C at a cooling rate of 60°C per hour.
After slowly cooling the lithium tantalate single crystal to (000
l) After optically polishing the surface, the chemically etched material was used as a substrate material and immersed in the melt for 8 minutes while rotating at 100 rpm.
(3)溶融体から基板材料を引き上げ、回転数1000
rpmで回転させながら30秒間溶融体上で溶融体を振
り切った後、室温まで徐冷し、基板上に約7μmの厚さ
のナトリウム、マグネシウム、チタン含有ニオブ酸リチ
ウム単結晶薄膜を得た。(3) Pull up the substrate material from the melt and rotate at 1000 rotations.
The melt was shaken off on the melt for 30 seconds while rotating at rpm, and then slowly cooled to room temperature to obtain a single crystal thin film of lithium niobate containing sodium, magnesium, and titanium with a thickness of about 7 μm on the substrate.
(4)得られたニオブ酸リチウムの単結晶薄膜のナトリ
ウム、マグネシウム、チタンの量は、それぞれ1.2モ
ル%、4モル%、8モル%であった。又格子定数(a軸
)は5.154人、入射光波長1.15μmで測定した
屈折率は、2.239± 0.001であった。(4) The amounts of sodium, magnesium, and titanium in the obtained single crystal thin film of lithium niobate were 1.2 mol%, 4 mol%, and 8 mol%, respectively. The lattice constant (a-axis) was 5.154, and the refractive index measured at an incident light wavelength of 1.15 μm was 2.239±0.001.
実施例4
(1)Li,C0, 52モル%、V,0. 44モル
%、Nb,0. 4モル%、Na, CO,を前記原料
物組成から析出可能なLiNbO,の理論量に対して、
48モル%添加(Na,0/Li,0=7,4/52)
、MgOを前記原料物組成から析出可能なljNbo,
の理論量に対して、5モル%添加(MgO/LiNbO
, =5/95)シた混合物を白金ルツボにいれ、エビ
タキシ?ル成長育成装置中で空気雰囲気下で1100℃
まで加熱してルツボの内容物を溶解させた。Example 4 (1) Li, C0, 52 mol%, V, 0. 44 mol%, Nb, 0. 4 mol%, Na, CO, with respect to the theoretical amount of LiNbO, which can be precipitated from the raw material composition,
Addition of 48 mol% (Na, 0/Li, 0=7, 4/52)
, ljNbo, which can precipitate MgO from the raw material composition,
Addition of 5 mol% (MgO/LiNbO
, =5/95) Put the mixed mixture into a platinum crucible and boil it. 1100°C under air atmosphere in a growth system
to dissolve the contents of the crucible.
(2)溶融体を1時間当り60℃の冷却速度で835℃
まで徐冷した後、タンタル酸リチウム単結晶の(000
l)面を光学研磨したものを基板材料として溶融体中に
IOOrpmで回転させながら12分間浸漬した。(2) Cool the melt to 835°C at a cooling rate of 60°C per hour.
After slowly cooling the lithium tantalate single crystal to (000
l) A material whose surface had been optically polished was used as a substrate material and immersed in the melt for 12 minutes while rotating at IOO rpm.
(3)溶融体から基板材料を引き上げ、回転数100o
rpmで30秒間溶融体上で、溶融体を振り切った後、
室温まで徐冷し、基板材料上に約8μmの厚さのナトリ
ウム、マグネシウム含有ニオブ酸リチウム単結晶薄膜を
得た。(3) Pull up the substrate material from the melt and rotate at 100o.
After shaking off the melt on the melt for 30 seconds at rpm,
The mixture was slowly cooled to room temperature, and a lithium niobate single crystal thin film containing sodium and magnesium with a thickness of about 8 μm was obtained on the substrate material.
(4)得られたニオブ酸リチウムの単結晶薄膜中に含有
されていたナトリウム、マグネシウムの量は、それぞれ
1モル%、6モル%であった。又薄膜の格子定数(a軸
)は5,153人、入射光波長1.15μmで測定した
屈折率は、2.232±0.001であった。(4) The amounts of sodium and magnesium contained in the obtained single crystal thin film of lithium niobate were 1 mol% and 6 mol%, respectively. The lattice constant (a-axis) of the thin film was 5,153, and the refractive index measured at an incident light wavelength of 1.15 μm was 2.232±0.001.
実施例5
(1)Li,C0, 50モル%、V,0. 30モル
%、Nb,0.20モル%、Na, Co,を前記原料
物組成から析出可能なLiNbO.の理論量に対して5
0モル%添加(Na,0/Li,0■40/50)、M
goを前記原料物組成から析出可能なLiNbO.の理
論量に対して4モル%添加(MgO/LiNbO, =
4/96) Lた混合物を白金ルツボにいれ、エピタキ
シャル成長育成装置中で空気雰囲気下で1150℃まで
加熱してルツボの内容物を溶解した。Example 5 (1) Li, C0, 50 mol%, V, 0. LiNbO.30 mol%, Nb, 0.20 mol%, Na, Co, can be precipitated from the raw material composition. 5 for the theoretical quantity of
0 mol% addition (Na, 0/Li, 0 40/50), M
LiNbO.go can be precipitated from the raw material composition. Addition of 4 mol% to the theoretical amount of (MgO/LiNbO, =
4/96) The mixture was placed in a platinum crucible and heated to 1150°C in an air atmosphere in an epitaxial growth and growth apparatus to melt the contents of the crucible.
(2)溶融体を1時間当り60℃の冷却速度で995℃
まで徐冷した後、タンタル酸リチウム単結晶の(000
l)面を光学研磨した後、化学エッチングしたものを基
板材料として溶融体中にloorpmで回転させながら
12分間浸漬した。(2) Cool the melt to 995°C at a cooling rate of 60°C per hour.
After slowly cooling the lithium tantalate single crystal to (000
l) After optically polishing the surface, the chemically etched material was used as a substrate material and immersed in the melt for 12 minutes while rotating at loorpm.
(3)溶融体から基板材料を引き上げ、回転数100O
rpmで30秒間溶融体上で、溶融体を振り切った後、
室温まで徐冷し、基板材料上に約9μmの厚さのナトリ
ウム、マグネシウム含有ニオブ酸リチウム単結晶薄膜を
得た。(3) Pull up the substrate material from the melt and rotate at 100O.
After shaking off the melt on the melt for 30 seconds at rpm,
The mixture was slowly cooled to room temperature, and a lithium niobate single crystal thin film containing sodium and magnesium with a thickness of about 9 μm was obtained on the substrate material.
(4)得られたニオブ酸リチウムの単結晶薄膜中に含有
されていたナトリウム、マグネシウムの量は、それぞれ
2モル%、5モル%であった。又薄膜の格子定数(a軸
)は5.155人、入射光波長1.15μmで測定した
屈折率は、2, 233±0.001であった。(4) The amounts of sodium and magnesium contained in the obtained single crystal thin film of lithium niobate were 2 mol% and 5 mol%, respectively. The lattice constant (a-axis) of the thin film was 5.155, and the refractive index measured at an incident light wavelength of 1.15 μm was 2,233±0.001.
実施例6
(1)Na,Co, 47.4モル%、Li,C0,
23.7モル%、V, O.4.2モル%、Nb,0,
24.7モル%、MgOを前記原料物組成から析出可
能なLiNbO,の理論量に対して、2モル%添加(M
gO/LiNbO.・2/90) Lて混合物を白金ル
ツボにいれ、エピタキシャル成長育成装置中で空気雰囲
気下で1150℃まで加熱してルツボの内容物を溶解し
た。Example 6 (1) Na, Co, 47.4 mol%, Li, CO,
23.7 mol%, V, O. 4.2 mol%, Nb,0,
24.7 mol%, MgO added to the theoretical amount of LiNbO that can be precipitated from the raw material composition (MgO
gO/LiNbO.・2/90) The mixture was placed in a platinum crucible and heated to 1150° C. in an air atmosphere in an epitaxial growth growth apparatus to melt the contents of the crucible.
(2)溶融体を1時間当り60℃の冷却速度で1023
℃まで徐冷した後、タンタル酸リチウム単結晶の(00
0l)面を光学研磨した後、化学エッチングしたものを
基板材料として溶融体中に10Orpmで回転させなが
ら13分間浸漬した。(2) The melt was cooled at a cooling rate of 60°C per hour to 1023°C.
After slowly cooling to ℃, lithium tantalate single crystal (00
After optically polishing the surface, the chemically etched material was immersed in the melt for 13 minutes as a substrate material while rotating at 10 rpm.
(3)溶融体から基板材料を引き上げ、回転数100O
rpmで30秒間溶融体上で、溶融体を振り切った後、
室温まで徐冷し、基板材料上に約Itμmの厚さのナト
リウム、マグネシウム含有ニオブ酸リチウム単結晶薄膜
を得た。(3) Pull up the substrate material from the melt and rotate at 100O.
After shaking off the melt on the melt for 30 seconds at rpm,
The mixture was slowly cooled to room temperature, and a lithium niobate single crystal thin film containing sodium and magnesium with a thickness of about It μm was obtained on the substrate material.
(4)得られたニオブ酸リチウムの単結晶薄膜中に含有
されていたナトリウム、マグネシウムの量は、それぞれ
2.5モル2、および3モル2であった。又薄膜の格子
定数(a軸)は5,156A、入射光波長1. 15μ
mで測定した屈折率は、2,235±0.001であっ
た。(4) The amounts of sodium and magnesium contained in the obtained single crystal thin film of lithium niobate were 2.5 mol2 and 3 mol2, respectively. The lattice constant (a-axis) of the thin film is 5,156A, and the wavelength of the incident light is 1. 15μ
The refractive index measured in m was 2,235±0.001.
実施例7
(1)Na,Co, 45.9モル%、Li,C0,
36.8モル%、V, O,2.7モル%、Nb,0,
14.6モル%、MgOを前記原料物組成から析出可
能なLiNbO,の理論量に対して、4モル%添加(M
gO/LiNbO,=4/96)、Nd2O,を前記原
料物組成から析出可能なLiNbO,の理論量に対して
、1モル%添加した混合物を白金ルッポにいれ、エピタ
キシャル成長育成装置中で空気雰囲気下で1150℃ま
で加熱してルッポの内容物を溶解させた。Example 7 (1) Na, Co, 45.9 mol%, Li, CO,
36.8 mol%, V, O, 2.7 mol%, Nb, 0,
14.6 mol%, 4 mol% added (MgO) to the theoretical amount of LiNbO that can be precipitated from the raw material composition
gO/LiNbO, = 4/96), Nd2O, was added in an amount of 1 mol % based on the theoretical amount of LiNbO that can be precipitated from the raw material composition, and the mixture was placed in a platinum lupo and grown in an epitaxial growth apparatus under an air atmosphere. The contents of Luppo were dissolved by heating to 1150°C.
(2)溶融体を1時間当り60℃の冷却速度で970℃
まで徐冷した後、タンタル酸リチウム単結晶の(000
l)面を光学研磨した後、化学エッチングしたものを基
板材料として溶融体中にloorpmで回転させながら
18分間浸漬した。(2) Cool the melt to 970°C at a cooling rate of 60°C per hour.
After slowly cooling the lithium tantalate single crystal to (000
l) After optically polishing the surface, the chemically etched material was used as a substrate material and immersed in the melt for 18 minutes while rotating at loorpm.
(3)溶融体から基板材料を引き上げ、回転数100O
rpmで30秒間溶融体上で、溶融体を振り切った後、
室温まで徐冷し、基板材料上に約9μmの厚さのナトリ
ウム、マグネシウム、ネオジム含有ニオブ酸リチウム単
結晶薄膜を得た。(3) Pull up the substrate material from the melt and rotate at 100O.
After shaking off the melt on the melt for 30 seconds at rpm,
The mixture was slowly cooled to room temperature, and a lithium niobate single crystal thin film containing sodium, magnesium, and neodymium with a thickness of about 9 μm was obtained on the substrate material.
(4)得られたニオブ酸リチウムの単結晶薄膜中に含有
されていたナトリウム、マグネシウム、ネオジムの量は
、それぞれ1.2モル%、5モル%及び0.3モル%で
あった。又薄膜の格子定数(a軸)は5, 154人、
入射光波長1.15μmで測定した屈折率は2.233
±0.001であった。(4) The amounts of sodium, magnesium, and neodymium contained in the obtained single crystal thin film of lithium niobate were 1.2 mol%, 5 mol%, and 0.3 mol%, respectively. The lattice constant (a-axis) of the thin film is 5,154.
The refractive index measured at an incident light wavelength of 1.15 μm is 2.233
It was ±0.001.
実施例8
(1)Li,Co, 60モル%、v20。20モル%
、Nb,0. 20−Eル%、Na, Co,を前記原
料物組成から析出可能なL INb O wの理論量に
対して、50モル%添加(Na2O/Li,0・40/
60)、MgOを前記原料物組成から析出可能なしiN
bo,の理論量に対して、4モル%添加(MgO/Li
NbO,・4/96) Lた混合物を白金ルツボにいれ
、エピタキシャル成長育成装置中で空気雰囲気下で11
50℃まで加熱してルツホの内容物を溶解した。Example 8 (1) Li, Co, 60 mol%, v20.20 mol%
, Nb,0. 20-El%, Na, Co, were added at 50 mol% (Na2O/Li, 0.40/
60), MgO can be precipitated from the raw material composition and iN
4 mol% addition (MgO/Li
NbO, 4/96) The mixture was placed in a platinum crucible and heated for 11 hours in an air atmosphere in an epitaxial growth apparatus.
It was heated to 50° C. to dissolve the contents of the Lutuho.
(2)溶融体を1時間当り60℃の冷却速度で995℃
まで徐冷した後、タンタル酸リチウム単結晶の(000
l)面を光学研磨した後、化学エッチングしたちのを基
板材料として溶融体中にIOOrpmで回転させながら
12分間浸漬した。(2) Cool the melt to 995°C at a cooling rate of 60°C per hour.
After slowly cooling the lithium tantalate single crystal to (000
l) After optically polishing the surface, the chemically etched material was immersed in a melt for 12 minutes as a substrate material while rotating at IOO rpm.
(3)溶融体から基板材料を引き上げ、回転数100O
rpmで30秒間溶融体上で、溶融体を振り切った後、
室温まで徐冷し、基板材料上に約8μmの厚さのナトリ
ウム、マグネシウム含有ニオブ酸リチウム単結晶薄展を
得た。(3) Pull up the substrate material from the melt and rotate at 100O.
After shaking off the melt on the melt for 30 seconds at rpm,
The mixture was slowly cooled to room temperature, and a thin lithium niobate single crystal containing sodium and magnesium having a thickness of about 8 μm was obtained on the substrate material.
(4)得られたニオブ酸リチウムの単結晶薄膜中に含有
されていたナトリウム、マグネシウムの量は、それぞれ
1.8モル%、5モル%であった。又薄膜の格子定数(
a軸)は5.155人、入射光波長1.15μmで測定
した屈折率は、2. 233±0.001であった。(4) The amounts of sodium and magnesium contained in the obtained single crystal thin film of lithium niobate were 1.8 mol% and 5 mol%, respectively. Also, the lattice constant of the thin film (
a-axis) is 5.155 people, and the refractive index measured at an incident light wavelength of 1.15 μm is 2. It was 233±0.001.
実施例9
(1)Li,Co, 52モル%、V,0, 44モ)
Ii%、Nb,0.4モル%、Na, Co,をLiN
bO,に対して、93モル%添加、MgOをLiNbO
,に対して0.Olモル%添加した混合物を白金ルツボ
にいれ、エピタキシャル成長育成装置中で空気雰囲気下
で1150℃まで加熱してルツボの内容物を溶解した。Example 9 (1) Li, Co, 52 mol%, V, 0, 44 mol%)
Ii%, Nb, 0.4 mol%, Na, Co, LiN
93 mol% addition to bO, MgO to LiNbO
, 0. The mixture to which mol % of Ol was added was placed in a platinum crucible and heated to 1150° C. in an air atmosphere in an epitaxial growth and growth apparatus to melt the contents of the crucible.
(2)溶融体を1時間当りに60℃の冷却速度で835
℃まで徐冷した後、タンタル酸リチウム単結晶の(00
01)面を光学研磨した後、化学エッチングしたものを
基板材料として溶融体中に10Orpmで回転させなが
ら12分間浸漬した。(2) Cool the melt at a cooling rate of 60°C per hour to 835°C.
After slowly cooling to ℃, lithium tantalate single crystal (00
01) After optically polishing the surface, the chemically etched material was used as a substrate material and immersed in the melt for 12 minutes while rotating at 10 rpm.
(3)溶融体から基板材料を引き上げ、回転数100o
rpmで30秒間溶融体上で、溶融体を振り切った後、
室温まで徐冷し、基板材料上に約8μmの厚さのナトリ
ウム、マグネシウム含有ニオブ酸リチウム単結晶薄膜を
得た。(3) Pull up the substrate material from the melt and rotate at 100o.
After shaking off the melt on the melt for 30 seconds at rpm,
The mixture was slowly cooled to room temperature, and a lithium niobate single crystal thin film containing sodium and magnesium with a thickness of about 8 μm was obtained on the substrate material.
(4)得られたニオブ酸リチウムの単結晶薄膜のナトリ
ウム、マグネシウムの量は、それぞれ2モル%、0.0
2モル%であった。又、薄膜の格子定数(a軸)はs,
153 A、入射光波長1.15μmで測定した屈折
率は、2. 232±0.001であった。(4) The amounts of sodium and magnesium in the obtained single crystal thin film of lithium niobate were 2 mol% and 0.0 mol%, respectively.
It was 2 mol%. Also, the lattice constant (a-axis) of the thin film is s,
153 A, the refractive index measured at an incident light wavelength of 1.15 μm is 2. It was 232±0.001.
実施例10
(1)Li,C0, 50モルχ、V2OS30モル%
、Nb,0. 20モル%、Na,Co,をliNbo
,に対して86モル%添加、MgOをLiNbO.に対
して0.2モル%添加した混合物を白金ルツボにいれ、
エピタキシャル成長育成装置中で空気雰囲気下で115
0℃まで加熱してルツボの内容物を溶解した。Example 10 (1) Li, C0, 50 mol χ, V2OS 30 mol%
, Nb,0. 20 mol% Na, Co, liNbo
, 86 mol% of MgO was added to LiNbO. 0.2 mol% of the mixture was put into a platinum crucible,
115 in an air atmosphere in an epitaxial growth growth apparatus.
The contents of the crucible were dissolved by heating to 0°C.
(2)溶融体を1時間当りに60℃の冷却速度で995
℃まで徐冷した後、タンタル酸リチウム単結晶の(00
01)面を光学研磨した後、化学エッチングしたものを
基板材料として溶融体中に10Orpmで回転させなが
ら12分間浸漬した。(2) Cool the melt at a cooling rate of 60°C per hour to 995°C.
After slowly cooling to ℃, lithium tantalate single crystal (00
01) After optically polishing the surface, the chemically etched material was used as a substrate material and immersed in the melt for 12 minutes while rotating at 10 rpm.
(3)溶融体から基板材料を引き上げ、回転数100o
rpmで30秒間溶融体上で、溶融体を振り切った後、
室温まで徐冷し、基板材料上に約9μmの厚さのナトリ
ウム、マグネシウム含有ニオブ酸リチウム単結晶薄膜を
得た。(3) Pull up the substrate material from the melt and rotate at 100o.
After shaking off the melt on the melt for 30 seconds at rpm,
The mixture was slowly cooled to room temperature, and a lithium niobate single crystal thin film containing sodium and magnesium with a thickness of about 9 μm was obtained on the substrate material.
(4)得られたニオブ酸リチウムの単結晶薄膜のナトリ
ウム、マグネシウムの量は、それぞれ0.3モル%、5
モル%であった。又、薄膜の格子定数(a軸)は5.1
55人、入射光波長1.15μmで測定した屈折率は、
2.233±0.001であった。(4) The amounts of sodium and magnesium in the obtained single crystal thin film of lithium niobate were 0.3 mol% and 5 mol%, respectively.
It was mol%. Also, the lattice constant (a-axis) of the thin film is 5.1
The refractive index measured by 55 people at an incident light wavelength of 1.15 μm is
It was 2.233±0.001.
実施例1−10で得られた本発明のニオブ酸リチウム単
結晶薄膜についてプリズム結合により波長0.83μm
の半導体レーザ光に対する光伝搬損失を測定し、その結
果を第1表に示した。Regarding the lithium niobate single crystal thin film of the present invention obtained in Example 1-10, the wavelength was 0.83 μm by prism bonding.
The optical propagation loss for the semiconductor laser beam was measured, and the results are shown in Table 1.
第 1 表
実施例 光伝搬損失(dB/am)l1.3
2l.0
31.0
41.l
5l.3
6l.0
71.2
8 1.0
91.0
10 1.3
(発明の効果)
本発明によれば、タンタル酸リチウム基板上に優れた光
学的特性を持ち、従来得られる膜厚より厚いニオブ酸リ
チウム単結晶薄膜を形成でき、SHG素子を始めとして
化学的特性を持ち、従来得られる膜厚より厚いニオブ酸
リチウム単結晶薄膜を形成でき、SHG素子を始めとし
て光学デバイスの構成材料として有用である。Table 1 Example Optical propagation loss (dB/am) l1.3 2l. 0 31.0 41. l 5l. 3 6l. 0 71.2 8 1.0 91.0 10 1.3 (Effects of the invention) According to the present invention, lithium niobate having excellent optical properties and having a film thickness thicker than conventionally obtained is deposited on a lithium tantalate substrate. It can form a single crystal thin film, has chemical properties, and is thicker than conventionally obtained lithium niobate single crystal thin films, making it useful as a constituent material for optical devices such as SHG elements.
第1図はニオブ酸リチウム単結晶の成長面であるタンタ
ル酸リチウム基板の(0001)面を示す模式図である
。
第2図は、Li, O−V, O, −Nb, O.の
3成分系の三角図である。各組成点は(Li2Oのモル
%, V2O,のモル駕,Nb2OSのモル%)で表わ
される。
A(88.90
B(55.00
C(46.50
D(37.50
E(69.85
FC49.95
G(44.13
8(54,72
1(57.43
J(49.95
K(47.36
L(56.38
2.22, 8.88)
43,00, 2.00)
5l.50,2.00)
5.00, 57.’50)
21.33 8.82)
45.02 5.03)
16 76 39.11)
11 12 34.16)
35 05 7.52)
42,53 7.52)
26 32 26.32)
17 91 25.71)FIG. 1 is a schematic diagram showing the (0001) plane of a lithium tantalate substrate, which is the growth plane of a lithium niobate single crystal. FIG. 2 shows Li, O-V, O, -Nb, O. It is a triangular diagram of a three-component system. Each composition point is expressed as (mol % of Li2O, mol % of V2O, mol % of Nb2OS). A(88.90 B(55.00 C(46.50 D(37.50 E(69.85 FC49.95 G(44.13 8(54,72 1(57.43 J(49.95 K() 47.36 L (56.38 2.22, 8.88) 43.00, 2.00) 5l.50, 2.00) 5.00, 57.'50) 21.33 8.82) 45. 02 5.03) 16 76 39.11) 11 12 34.16) 35 05 7.52) 42,53 7.52) 26 32 26.32) 17 91 25.71)
Claims (1)
タキシャル成長により、ニオブ酸リチウム単結晶薄膜を
育成させる方法であって、溶融体として、主としてLi
_2O、V_2O_5、Nb_2O_5、Na_2O、
MgOからなり、前記Li_2O、V_2O_5、Nb
_2O_5の組成範囲が、Li_2O−V_2O_5−
Nb_2O_5の3成分系の三角図において、A(88
.90,2.22,8.88)、B(55.00,43
.00,2.00)、C(46.50,51.50,2
.00)、D(37.50,5.00,57.50)の
4組成点で囲まれる領域で示される組成割合にあるもの
を用い、ニオブ酸リチウム単結晶薄膜のa軸の格子定数
とタンタル酸リチウム基板のa軸の格子定数を整合させ
ることを特徴とするニオブ酸リチウム単結晶薄膜の製造
方法。 2、前記Na_2Oの組成範囲は、モル比でNa_2O
/Li_2Oが、2.0/98.0〜93.5/6.5
を満たす請求項1に記載のニオブ酸リチウム単結晶薄膜
の製造方法。 3、前記MgOの組成範囲は、モル比でMgO/ニオブ
酸リチウムが、0.1/99.9〜25.0/75.0
を満たす請求項1に記載のニオブ酸リチウム単結晶薄膜
の製造方法。 4、ニオブ酸リチウム単結晶薄膜を育成する温度は、6
00〜1250℃の範囲内である請求項1に記載のニオ
ブ酸リチウム単結晶薄膜の製造方法。 5、ニオブ酸リチウム単結晶薄膜をタンタル酸リチウム
基板(0001)面に育成することを特徴とする請求項
1に記載のニオブ酸リチウム単結晶薄膜の製造方法。 6、前記ニオブ酸リチウム単結晶薄膜のa軸の格子定数
をタンタル酸リチウム基板のa軸の格子定数の99.8
1〜100.07%の範囲にする請求項1に記載のニオ
ブ酸リチウム単結晶薄膜の製造方法。[Claims] 1. A method for growing a lithium niobate single crystal thin film by epitaxial growth by bringing a lithium tantalate substrate into contact with a melt, the method comprising mainly Li
_2O, V_2O_5, Nb_2O_5, Na_2O,
It consists of MgO, the Li_2O, V_2O_5, Nb
The composition range of _2O_5 is Li_2O-V_2O_5-
In the triangular diagram of the three-component system of Nb_2O_5, A(88
.. 90, 2.22, 8.88), B (55.00, 43
.. 00,2.00), C(46.50,51.50,2
.. 00), D(37.50, 5.00, 57.50), and the a-axis lattice constant of the lithium niobate single crystal thin film and tantalum. A method for producing a lithium niobate single crystal thin film, the method comprising matching the a-axis lattice constant of a lithium oxide substrate. 2. The composition range of Na_2O is Na_2O in molar ratio.
/Li_2O is 2.0/98.0 to 93.5/6.5
The method for producing a lithium niobate single crystal thin film according to claim 1, which satisfies the following. 3. The composition range of the MgO is MgO/lithium niobate in a molar ratio of 0.1/99.9 to 25.0/75.0.
The method for producing a lithium niobate single crystal thin film according to claim 1, which satisfies the following. 4. The temperature for growing lithium niobate single crystal thin film is 6.
The method for producing a lithium niobate single crystal thin film according to claim 1, wherein the temperature is within the range of 00 to 1250°C. 5. The method for producing a lithium niobate single crystal thin film according to claim 1, characterized in that the lithium niobate single crystal thin film is grown on a (0001) surface of a lithium tantalate substrate. 6. The a-axis lattice constant of the lithium niobate single crystal thin film is 99.8 of the a-axis lattice constant of the lithium tantalate substrate.
The method for producing a lithium niobate single crystal thin film according to claim 1, wherein the lithium niobate single crystal thin film is in a range of 1 to 100.07%.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34235789A JP2838803B2 (en) | 1989-09-20 | 1989-12-29 | Method for producing lithium niobate single crystal thin film |
| US07/700,169 US5209917A (en) | 1989-09-20 | 1990-09-20 | Lithium niobate single crystal thin film and production method thereof |
| EP90913862A EP0444209B1 (en) | 1989-09-20 | 1990-09-20 | Thin film of lithium niobate single crystal and production thereof |
| DE69033660T DE69033660T2 (en) | 1989-09-20 | 1990-09-20 | THIN FILM SINGLE CRYSTAL FROM LITHIUM NIOBATE AND METHOD FOR THE PRODUCTION THEREOF |
| PCT/JP1990/001207 WO1991004360A1 (en) | 1989-09-20 | 1990-09-20 | Thin film of lithium niobate single crystal and production thereof |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1-242285 | 1989-09-20 | ||
| JP24228589 | 1989-09-20 | ||
| JP34235789A JP2838803B2 (en) | 1989-09-20 | 1989-12-29 | Method for producing lithium niobate single crystal thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03218997A true JPH03218997A (en) | 1991-09-26 |
| JP2838803B2 JP2838803B2 (en) | 1998-12-16 |
Family
ID=26535699
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34235789A Expired - Lifetime JP2838803B2 (en) | 1989-09-20 | 1989-12-29 | Method for producing lithium niobate single crystal thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2838803B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5291576A (en) * | 1992-06-18 | 1994-03-01 | Ibiden Co., Ltd. | Single mode optical waveguide |
| JPH06199598A (en) * | 1992-10-15 | 1994-07-19 | Natl Inst For Res In Inorg Mater | Method for producing lithium niobate single crystal |
-
1989
- 1989-12-29 JP JP34235789A patent/JP2838803B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5291576A (en) * | 1992-06-18 | 1994-03-01 | Ibiden Co., Ltd. | Single mode optical waveguide |
| JPH06199598A (en) * | 1992-10-15 | 1994-07-19 | Natl Inst For Res In Inorg Mater | Method for producing lithium niobate single crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2838803B2 (en) | 1998-12-16 |
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