JPH03219083A - Electroless plating method, production of electroless plating body and electro-optical device, and electro-optical device - Google Patents
Electroless plating method, production of electroless plating body and electro-optical device, and electro-optical deviceInfo
- Publication number
- JPH03219083A JPH03219083A JP1170090A JP1170090A JPH03219083A JP H03219083 A JPH03219083 A JP H03219083A JP 1170090 A JP1170090 A JP 1170090A JP 1170090 A JP1170090 A JP 1170090A JP H03219083 A JPH03219083 A JP H03219083A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- electro
- electroless plating
- optical device
- nickel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007772 electroless plating Methods 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims 6
- 238000007747 plating Methods 0.000 claims abstract description 65
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 30
- 239000001257 hydrogen Substances 0.000 claims abstract description 30
- 239000000956 alloy Substances 0.000 claims abstract description 25
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000011888 foil Substances 0.000 claims abstract description 3
- 239000010931 gold Substances 0.000 claims description 11
- 239000004973 liquid crystal related substance Substances 0.000 claims description 11
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- IXQWNVPHFNLUGD-UHFFFAOYSA-N iron titanium Chemical compound [Ti].[Fe] IXQWNVPHFNLUGD-UHFFFAOYSA-N 0.000 claims description 2
- DOARWPHSJVUWFT-UHFFFAOYSA-N lanthanum nickel Chemical group [Ni].[La] DOARWPHSJVUWFT-UHFFFAOYSA-N 0.000 claims description 2
- ATTFYOXEMHAYAX-UHFFFAOYSA-N magnesium nickel Chemical compound [Mg].[Ni] ATTFYOXEMHAYAX-UHFFFAOYSA-N 0.000 claims description 2
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 claims 4
- QDWJUBJKEHXSMT-UHFFFAOYSA-N boranylidynenickel Chemical compound [Ni]#B QDWJUBJKEHXSMT-UHFFFAOYSA-N 0.000 claims 2
- 238000009713 electroplating Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 3
- 229910002593 Fe-Ti Inorganic materials 0.000 abstract 1
- 229910020794 La-Ni Inorganic materials 0.000 abstract 1
- 229910019083 Mg-Ni Inorganic materials 0.000 abstract 1
- 229910019403 Mg—Ni Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000011148 porous material Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 26
- 239000003638 chemical reducing agent Substances 0.000 description 5
- 239000003566 sealing material Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- VXAPDXVBDZRZKP-UHFFFAOYSA-N nitric acid phosphoric acid Chemical compound O[N+]([O-])=O.OP(O)(O)=O VXAPDXVBDZRZKP-UHFFFAOYSA-N 0.000 description 2
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical class B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000012279 sodium borohydride Substances 0.000 description 1
- 229910000033 sodium borohydride Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Chemically Coating (AREA)
Abstract
Description
【発明の詳細な説明】 Ｃ産業上の利用分野］ 本発明は、無電解めっき法に関するものである。[Detailed description of the invention] C industrial application field] The present invention relates to an electroless plating method.
［従来の技術］
従来、無電解めっき法において無電解めっきで金属層を
形成する場合、金属層を緻密でピンホールのないように
するため例えばめっきの析出速度を遅くするとかめっき
液やめっき環境のクリーン度を向上する等の方法が用い
られてきた。[Prior art] Conventionally, when forming a metal layer by electroless plating in an electroless plating method, in order to make the metal layer dense and pinhole-free, for example, the deposition rate of the plating is slowed down, or the plating solution and the plating environment are Methods have been used to improve the cleanliness of
第３図は従来の無電解めっきの様子を示す概念的側面図
である。ｌはめっき槽、３は被めっき体を保持するキャ
リア、４は被めっき体、６はめっきｔ夜である。FIG. 3 is a conceptual side view showing the state of conventional electroless plating. 1 is a plating tank, 3 is a carrier for holding an object to be plated, 4 is an object to be plated, and 6 is a plating stage.
［発明の解決しようとする課題］
しかし、めっき析出速度の調整とめっき液等のクリーン
化によるだけでは、無電解めっき時に発生し、金属層内
部に吸蔵された水素ガスが外部に放出される折りにガス
の通過路が出来てしまうためポーラス化、ピンホール発
生等の欠陥につながっていた。[Problems to be solved by the invention] However, simply adjusting the plating deposition rate and cleaning the plating solution will not solve the problem of hydrogen gas generated during electroless plating and released outside the metal layer. This creates a path for gas to pass through, leading to defects such as porousness and pinhole formation.
［課題を解決する為の手段］
本発明はかかる問題点を解決すべくなされたものであり
、めっき槽内で基板上に金属層を形成する無電解めっき
法において、めっき槽内に水素吸蔵合金を配置して、無
電解めっきを行なうことを特徴とする無電解めっき法を
提供するものである。[Means for Solving the Problems] The present invention has been made to solve these problems, and in an electroless plating method in which a metal layer is formed on a substrate in a plating tank, a hydrogen storage alloy is used in the plating tank. The present invention provides an electroless plating method characterized in that electroless plating is performed by arranging.
本発明では無電解めっき法で金属を形成するのに先立っ
てめっき槽内張として又はめっき槽内に表面積をできる
だけ大きくした水素吸蔵合金を配置する。水素吸蔵合金
としては、ランタン−ニッケル系、鉄−チタン系、マグ
ネシウムニッケル系、Ｆｅｏ、 ５−Ｎｌｏ、 １−Ｔ
ｔ系等を使用することが好ましい。通常の無電解めっき
法で例えば透明電極上へ金属を析出させて金属層を形成
する。続いて温水エージングや高温キュアをしても良い
。また金属層は１層とは駅らず、２層かそれ以上のもの
としても良い。本発明が適用される無電解めっきは、め
っき時に水素ガスが発生するタイプであれば適°用可能
である。In the present invention, prior to forming metal by electroless plating, a hydrogen storage alloy with a surface area as large as possible is arranged as a lining of the plating tank or inside the plating tank. Examples of hydrogen storage alloys include lanthanum-nickel, iron-titanium, magnesium-nickel, Feo, 5-Nlo, and 1-T.
It is preferable to use t-type or the like. For example, a metal layer is formed by depositing a metal onto a transparent electrode using a normal electroless plating method. Subsequently, hot water aging or high temperature curing may be performed. Further, the metal layer is not limited to one layer, but may be two or more layers. Electroless plating to which the present invention is applied can be applied to any type of plating that generates hydrogen gas during plating.
本発明の無電解めっき方法及び装置を概念的に示す側面
図が第１図及び第２図である。２及び５は水素吸蔵合金
であり、第１図は水素吸蔵合金をめっき層ｌの内張つと
して使用した場合、第２図はめっき槽ｌ内に水素吸蔵合
金を配置した場合の図である。FIGS. 1 and 2 are side views conceptually showing the electroless plating method and apparatus of the present invention. 2 and 5 are hydrogen storage alloys. Figure 1 shows the case where the hydrogen storage alloy is used as the lining of the plating layer l, and Figure 2 shows the case where the hydrogen storage alloy is placed in the plating tank l. .
これらの水素吸蔵合金は、通常、限界に近い水素を吸蔵
することにより、脆性破壊を起こしたり、微粉化するこ
とがある。従って、水素吸蔵合金は、無電解めっきから
の水素発生量に対して、十分大きな水素吸蔵能力を持っ
ていることが望ましい。このような水素吸蔵合金を得る
ためには、その形状を薄膜もしくは箔状とし、少量でも
十分大きな表面積になるようにすることが好ましい。These hydrogen-absorbing alloys usually suffer from brittle fracture or become pulverized by absorbing hydrogen close to their limit. Therefore, it is desirable that the hydrogen storage alloy has a sufficiently large hydrogen storage capacity with respect to the amount of hydrogen generated from electroless plating. In order to obtain such a hydrogen storage alloy, it is preferable to make it into a thin film or foil shape so that even a small amount has a sufficiently large surface area.
本発明は例えば液晶表示素子、エレクトロクロミック素
子、電気泳動表示素子、エレクトロルミネッセンス表示
素子等の公知の表示素子の端子の電極に使用するのに適
している。The present invention is suitable for use in terminal electrodes of known display elements such as liquid crystal display elements, electrochromic elements, electrophoretic display elements, and electroluminescent display elements.
以下、液晶表示セルの場合について説明する。The case of a liquid crystal display cell will be explained below.
液晶表示セルには、酸化インジウム錫（Ｉｎ２０３−３
−ＳｎＯ２）や酸化スズ等を主成分とする透明導電膜が
用いられている。この透明導電膜上に半田付けを行なっ
たりソケット類の接続端子として用いろ際の、強度の補
強や抵抗値の低減等の目的で、該透明導電膜上の所要部
分に金属被膜を形成することがしばしば行なわれる。The liquid crystal display cell is made of indium tin oxide (In203-3
-SnO2), tin oxide, or the like as a main component is used. A metal coating is formed on the required portions of the transparent conductive film for the purpose of reinforcing the strength and reducing the resistance value when soldering the film or using it as a connection terminal for sockets. is often done.
この金属被膜の形成方法として、Ｎｉ陽イオンの原料と
して硫酸ニッケル又は塩化ニッケル含み、次亜リン酸塩
を還元剤として含むメツキ液にて無電解めっき法により
透明電極上にＮ１−Ｐめっき被膜を施す方法や、還元剤
として水素化ホウ素ナトリウムを含むめっき液を用い、
透明導電膜上にＮｉ−８めっき被膜を形成する方法がし
ばしば行なわれている。As a method for forming this metal film, a N1-P plating film is formed on the transparent electrode by electroless plating using a plating solution containing nickel sulfate or nickel chloride as a raw material for Ni cations and hypophosphite as a reducing agent. using a plating solution containing sodium borohydride as a reducing agent,
A method of forming a Ni-8 plating film on a transparent conductive film is often used.
また、これらのめっきの上に更に金めつき等の層を形成
しても良い。かかるめっき被膜を施す方法に本発明の方
法は非常に適している。Furthermore, a layer such as gold plating may be further formed on these platings. The method of the present invention is very suitable for applying such a plating film.
第４図は液晶表示セルの構成を示す断面図であり、基板
５の上に電極７及びカラーフィルター８を形成し、更に
配向膜９を設けて配向膜面を相対向させて、周辺部をシ
ール材６でシールし、内側に液晶１０を封入したもので
あり、通常は、セルの両側に偏光膜を配置し、電極に電
圧を印加する手段を設けて使用する。FIG. 4 is a cross-sectional view showing the structure of a liquid crystal display cell, in which electrodes 7 and color filters 8 are formed on a substrate 5, and an alignment film 9 is further provided so that the alignment film surfaces face each other to form a peripheral area. It is sealed with a sealing material 6 and a liquid crystal 10 is sealed inside. Usually, polarizing films are arranged on both sides of the cell and means for applying voltage to the electrodes is provided.
この基板としては、ガラス、プラスチック等の透明基板
が使用でき、その表面には酸化インジウム錫（Ｉｎ２０
ｍ−３ｎ０２． Ｉ Ｔ Ｏ） 、酸化スズ等の透明
電極が形成されている。もちろん、この透明電極に低抵
抗の金属リードを併設したり、絶縁膜等を形成してあっ
ても良い。カラーフィルターは、必要に応じて設けられ
、第４図では電極の上に配置されているが、電極の下に
配置することも可能である。As this substrate, a transparent substrate such as glass or plastic can be used, and its surface is made of indium tin oxide (In20
m-3n02. A transparent electrode made of ITO), tin oxide, or the like is formed. Of course, a low-resistance metal lead may be provided along with this transparent electrode, or an insulating film or the like may be formed thereon. The color filter is provided as necessary, and although it is placed above the electrode in FIG. 4, it can also be placed below the electrode.
この電極付き基板の表面には、配向膜が形成されている
が、この配向制御方法としては、ポリイミド、ポリアミ
ド、ポリビニルアルコール等の有機高分子膜を印刷法や
スピナー法で形成し、これをラビングする方法、斜め蒸
着法等公知の配向制御法が使用できる。An alignment film is formed on the surface of this substrate with electrodes, and the method for controlling this alignment is to form an organic polymer film such as polyimide, polyamide, polyvinyl alcohol, etc. by a printing method or spinner method, and then rub it. A known orientation control method such as a method of evaporation, an oblique evaporation method, etc. can be used.
また、この配向膜とセル内面の遮光膜又は電極との間の
絶縁性を向上させる為に、ＳｉＯ□、Ｔｉ０ｚ等の絶縁
膜な挟持するようにしても良い。Further, in order to improve the insulation between this alignment film and the light shielding film or electrode on the inner surface of the cell, an insulating film such as SiO□ or Ti0z may be sandwiched between them.
シール材は、通常のエポキシ樹脂、シリコン樹脂等のシ
ール材でよく、通常はその一部に開口部を形成しておき
、セル化して後、その開口部から液晶を注入し、その開
口部を封止すれば良い。The sealing material may be an ordinary sealing material such as epoxy resin or silicone resin. Usually, an opening is formed in a part of the sealing material, and after forming a cell, liquid crystal is injected through the opening. Just seal it.
その一対の偏光膜の偏光軸は、通常のネガ型表示の液晶
表示素子の場合と同様にほぼ平行に配置されてもよいし
、通常のポジ型表示の液晶表示素子の場合と同様にほぼ
直交するように配置されても良い。The polarization axes of the pair of polarizing films may be arranged approximately parallel to each other as in the case of a normal negative-tone display liquid crystal display element, or substantially perpendicular to each other as in the case of a normal positive-tone display liquid crystal display element. It may be arranged as follows.
電極に電圧を印加する駆動手段としては、通常の液晶表
示装置に使用される駆動手段が使用でき、通常しきい値
以上の交流電圧を供給できる駆動手段が用いられる。As the driving means for applying a voltage to the electrodes, a driving means used in ordinary liquid crystal display devices can be used, and a driving means that can supply an alternating current voltage higher than a threshold value is usually used.
［実施例］
実施例１
ソーダガラス上にＩＴＯからなる透明導電膜を膜厚５０
０人に形成した後、フォトプロセスにより所定のパター
ンのＩＴＯ基板を得た。この基板を前処理してアルカリ
洗浄、酸処理、増感処理、促進処理を施した。次に水素
吸蔵合金をめっき槽内張又は槽内に配置した次亜リン酸
塩を還元剤として含むＮ１−Ｐめっき溶液８０℃に約２
分浸漬し、膜厚４５００人を得た。その後、リン酸−硝
酸溶液でめっき被膜を所定のパターンにエツチングした
。次に水素吸蔵合金をめっき槽内張又は槽内に配置した
置換型のＡｕめっき溶液９０℃に８０秒浸漬し、膜厚２
００人を得た。水洗後、水素吸蔵合金をめっき槽内張又
は槽内に配置した水素化ホウ素塩を還元剤として含む自
己触媒型のＡｕめっき溶液６０℃に６分浸漬し、膜厚１
５００人を得た。[Example] Example 1 A transparent conductive film made of ITO was formed on soda glass to a film thickness of 50 mm.
After forming the substrate, an ITO substrate with a predetermined pattern was obtained by photoprocessing. This substrate was pretreated and subjected to alkali cleaning, acid treatment, sensitization treatment, and acceleration treatment. Next, a N1-P plating solution containing hypophosphite as a reducing agent, with a hydrogen storage alloy lined in the plating tank or placed in the tank, was heated to 80℃ for about 2 hours.
The film was immersed for 30 minutes to obtain a film thickness of 4,500 mm. Thereafter, the plating film was etched into a predetermined pattern using a phosphoric acid-nitric acid solution. Next, the hydrogen storage alloy was immersed for 80 seconds in a displacement type Au plating solution at 90°C lined with or placed inside the plating tank, and the film thickness was 2.
Got 00 people. After washing with water, the hydrogen storage alloy was immersed for 6 minutes in an autocatalytic Au plating solution containing boron hydride salt as a reducing agent, which was placed inside or inside the plating tank, and the film thickness was 1.
We got 500 people.
このようにしてＮ１−Ｐめつきではピンホール個数が０
．１ｍｍ”あたり０個、Ａｕめつきではピンホール大き
さ約ｌＯμｍのものが、０．１ｍｍ”あたり０〜１個の
めっきが得られた。In this way, the number of pinholes is 0 in N1-P plating.
．． Plating with a pinhole size of about 10 μm was obtained in the case of Au plating, and 0 to 1 pinhole per 0.1 mm”.
実施例２
実施例１でＮ１−Ｐめつきを形成した後、さらに水洗後
、Ｎ１−Ｐ槽と同様に水素吸蔵合金を配置した水素化ホ
ウ素塩を還元剤として含むＮＬ−８めっき溶液５０℃に
約３分浸漬し、膜厚２５００人を得た。その後、リン酸
−硝酸溶液で各めっき被膜を所定のパターンにエツチン
グして導体を得た。更に実施例１と同様の方法で、２層
のＡｕめっきをその上に形成した。Example 2 After forming N1-P plating in Example 1 and further washing with water, a NL-8 plating solution containing a borohydride salt as a reducing agent with a hydrogen storage alloy arranged in the same way as in the N1-P tank was used at 50°C. It was immersed in water for about 3 minutes to obtain a film thickness of 2,500 mm. Thereafter, each plating film was etched into a predetermined pattern using a phosphoric acid-nitric acid solution to obtain a conductor. Further, in the same manner as in Example 1, two layers of Au plating were formed thereon.
このように得られたＮ１−Ｐめっき、Ｎ１−Ｂめっき、
Ａｕめっきは、ピンホールの少ない実施例１と遜色ない
ものであった。The thus obtained N1-P plating, N1-B plating,
The Au plating was comparable to Example 1 with fewer pinholes.
比較例
実施例１で水素吸蔵合金を配置せずに同様のめっきを行
なった。 ＮＬ−Ｐめっきには１０μｍ以下のピンホー
ルが１〜２個／−−” 、Ａｕめっきには２０〜５０μ
ｍのピンホールが３〜５個／園■２あり、実施例に比べ
欠陥の多いめっきであった。Comparative Example The same plating as in Example 1 was performed without disposing the hydrogen storage alloy. NL-P plating has 1 to 2 pinholes of 10 μm or less/--”, Au plating has 20 to 50 μm.
There were 3 to 5 m pinholes/2 x 2 pinholes, and the plating had more defects than the examples.
［発明の効果１
本発明は無電解めっき法による金属層の形成過程で、連
続的に水素ガスを強制放出させることにより、緻密でピ
ンホールのない金属層が得られるという優れた効果を有
し、また金属層の界面での付着強度においても従来と同
等のものが得られる。更に、使われる無電解めっきのフ
ローはほぼ通常のプロセスであり、特に大がかりな装置
や治、具を必要としない等のメリットがある。[Effect of the invention 1] The present invention has the excellent effect that a dense and pinhole-free metal layer can be obtained by continuously forcibly releasing hydrogen gas during the process of forming a metal layer by electroless plating. Also, the adhesion strength at the interface of the metal layer is equivalent to that of the conventional method. Furthermore, the flow of electroless plating used is almost a normal process, which has the advantage of not requiring particularly large-scale equipment, jigs, or tools.
第１図、第２図はそれぞれ本発明方法の実施例を示す側
面図であり、第３図は比較例である従来法の装置の側面
図である。
図において、１はめっき槽、２，５は水素吸蔵合金、３
はキャリア、４は被めっき体、６は第１
図
第２
図FIGS. 1 and 2 are side views showing an embodiment of the method of the present invention, and FIG. 3 is a side view of a conventional apparatus as a comparative example. In the figure, 1 is a plating tank, 2 and 5 are hydrogen storage alloys, and 3 is a plating tank.
is the carrier, 4 is the object to be plated, 6 is Fig. 1 Fig. 2
Claims (14)
っき法において、めっき槽内に水素吸蔵合金を配置して
、無電解めっきを行なうことを特徴とする無電解めっき
法。(1) An electroless plating method in which a metal layer is formed on a substrate in a plating tank, characterized in that a hydrogen storage alloy is placed in the plating tank and electroless plating is performed.
ていることを特徴とする請求項１記載の無電解めっき法
。(2) The electroless plating method according to claim 1, wherein the hydrogen storage alloy is arranged as a lining inside the plating tank.
ン系、マグネシウム−ニッケル系またはＦｅ＿０＿．＿
９−Ｎｉ＿０＿．＿１−Ｔｉ系のうちの１つから選ばれ
たものであることを特徴とする請求項１又は２記載の無
電解めっき法。(3) The hydrogen storage alloy is lanthanum-nickel, iron-titanium, magnesium-nickel, or Fe_0_. ＿
9-Ni_0_. The electroless plating method according to claim 1 or 2, characterized in that the plating material is selected from one of _1-Ti series.
対して、大きな水素吸蔵能力を持っていることを特徴と
する請求項１〜３いずれか１項記載の無電解めっき法。(4) The electroless plating method according to any one of claims 1 to 3, wherein the hydrogen storage alloy has a large hydrogen storage capacity relative to the amount of hydrogen generated from electroless plating.
る請求項１〜４いずれか１項記載の無電解めっき法。(5) The electroless plating method according to any one of claims 1 to 4, wherein the hydrogen storage alloy has a foil shape.
により形成された無電解めっき。(6) Electroless plating formed by the electroless plating method according to any one of claims 1 to 5.
ともに、基板上のリード端子を介して駆動回路と導電接
続されて成る電気光学装置の製造方法において、該リー
ド端子上に請求項１〜５いずれか１項記載の無電解めっ
き法により、無電解めっきを施すことを特徴とする電気
光学装置の製造方法。(7) A method for manufacturing an electro-optical device in which an electro-optic medium is sandwiched between a pair of electrode-attached substrates and is conductively connected to a drive circuit via a lead terminal on the substrate, wherein the electro-optic medium is sandwiched between a pair of electrode-attached substrates, and the electro-optical device is conductively connected to a drive circuit via a lead terminal on the substrate. 5. A method for manufacturing an electro-optical device, characterized in that electroless plating is performed by the electroless plating method according to any one of items 5 to 5.
項７記載の電気光学装置の製造方法。(8) The method for manufacturing an electro-optical device according to claim 7, wherein the electro-optic medium is a liquid crystal.
Ｏ＿２）であり、めっきはニッケル−リンめっき及び金
めっきであることを特徴とする請求項７又は８記載の電
気光学装置の製造方法。(9) The electrode is made of indium tin oxide (In_2O_3-Sn
9. The method for manufacturing an electro-optical device according to claim 7, wherein the plating is nickel-phosphorus plating and gold plating.
ｎＯ＿２）であり、めっきはニッケル−リンめっき、ニ
ッケル−ボロンめっき及び金めっきであることを特徴と
する請求項７又は８記載の電気光学装置の製造方法。(10) The electrode is made of indium tin oxide (In_2O_3-S
9. The method for manufacturing an electro-optical device according to claim 7, wherein the plating is nickel-phosphorus plating, nickel-boron plating, or gold plating.
とともに、基板上のリード端子を介して駆動回路と導電
接続されて成る電気光学装置において、該リード端子上
に請求項６記載の無電解めっきが形成されてなることを
特徴とする電気光学装置。(11) In an electro-optical device comprising an electro-optic medium sandwiched between a pair of electrode-attached substrates and conductively connected to a drive circuit via lead terminals on the substrate, an electro-optical device according to claim 6 is provided on the lead terminals. An electro-optical device characterized by being formed with electrolytic plating.
求項１１記載の電気光学装置。(12) The electro-optical device according to claim 11, wherein the electro-optic medium is a liquid crystal.
ｎＯ＿２）であり、めっきはニッケル−リンめっき及び
金めっきであることを特徴とする請求項１１又は１２記
載の電気光学装置。(13) The electrode is made of indium tin oxide (In_2O_3-S
13. The electro-optical device according to claim 11 or 12, wherein the electro-optical device is nickel-phosphorus plating and gold plating.
ｎＯ＿２）であり、めっきはニッケル−リンめっき、ニ
ッケル−ボロンめっき及び金めっきであることを特徴と
する請求項１１又は１２記載の電気光学装置。(14) The electrode is made of indium tin oxide (In_2O_3-S
13. The electro-optical device according to claim 11 or 12, wherein the plating is nickel-phosphorus plating, nickel-boron plating, or gold plating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1170090A JPH03219083A (en) | 1990-01-23 | 1990-01-23 | Electroless plating method, production of electroless plating body and electro-optical device, and electro-optical device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1170090A JPH03219083A (en) | 1990-01-23 | 1990-01-23 | Electroless plating method, production of electroless plating body and electro-optical device, and electro-optical device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03219083A true JPH03219083A (en) | 1991-09-26 |
Family
ID=11785316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1170090A Pending JPH03219083A (en) | 1990-01-23 | 1990-01-23 | Electroless plating method, production of electroless plating body and electro-optical device, and electro-optical device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03219083A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009011978A (en) * | 2007-07-06 | 2009-01-22 | Ngk Insulators Ltd | Hydrogen separator and method for producing the same |
-
1990
- 1990-01-23 JP JP1170090A patent/JPH03219083A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009011978A (en) * | 2007-07-06 | 2009-01-22 | Ngk Insulators Ltd | Hydrogen separator and method for producing the same |
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