JPH0322052B2 - - Google Patents
Info
- Publication number
- JPH0322052B2 JPH0322052B2 JP56159589A JP15958981A JPH0322052B2 JP H0322052 B2 JPH0322052 B2 JP H0322052B2 JP 56159589 A JP56159589 A JP 56159589A JP 15958981 A JP15958981 A JP 15958981A JP H0322052 B2 JPH0322052 B2 JP H0322052B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- growth
- solution
- compound
- boat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
- H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
Landscapes
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】
本発明は液相エピタキシヤル成長による半導体
結晶の製造方法のうち、特にエレクトロエピタキ
シヤル成長に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a semiconductor crystal by liquid phase epitaxial growth, and particularly to electroepitaxial growth.
従来、GaAsなどの化合物半導体では、これら
の半導体層を液相エピタキシヤル成長する方法が
知られており、それは通常被成長基板面と接触さ
せた成長用溶液の加熱温度を下げ、成長元素を過
飽和にして基板面に成長させる方式である。 Conventionally, for compound semiconductors such as GaAs, it is known to grow these semiconductor layers by liquid phase epitaxial growth, which usually involves lowering the heating temperature of the growth solution that is in contact with the growth substrate surface and supersaturating the growing elements. In this method, the film is grown on the substrate surface.
これに対して、同様の成長ボートを用い、基板
面と成長用溶液との間に電流を通じ、溶液中の溶
質原子が電子の流れる方向に吸い寄せられて、
（エレクトロンマイグレーシヨンをおこして）基
板上に成長する方式が最近提案されている。これ
をエレクトロエピタキシー法と呼んでおり、第１
図の成長ボート断面図に示すように、基板１を載
せた下部ボート２と溶液３を保持した上部ボート
４の間を窒化ボロン（BN）板５で絶縁し、上下
のカーボンボートをそれぞれ負と正の電極にして
電流を流し、基板面に柝出させるものである。こ
のようにすれば、GaAsなどの二元系溶液では、
上記した過飽和を利用する従来法と異なり、加熱
温度の微細な制御が不必要となる利点がある。 On the other hand, using a similar growth boat and passing an electric current between the substrate surface and the growth solution, the solute atoms in the solution are attracted in the direction of electron flow.
A method of growing on a substrate (by causing electron migration) has recently been proposed. This is called the electroepitaxy method, and the first
As shown in the cross-sectional view of the growth boat in the figure, a boron nitride (BN) plate 5 is used to insulate between the lower boat 2 carrying the substrate 1 and the upper boat 4 holding the solution 3, and the upper and lower carbon boats are each connected to a negative electrode. A current is applied to the positive electrode, and the current is ejected onto the substrate surface. In this way, in a binary solution such as GaAs,
Unlike the conventional method using supersaturation described above, this method has the advantage that fine control of heating temperature is unnecessary.
しかしながら、基板面上へ柝出した成長層が組
成勾配を生じたり、又成長用元素が枯渇する欠点
を防ぐことはできない。例えばInP基板に格子整
合させることができて、そのエネルギ−ギヤツプ
を1.46〔ev〕〜0.74〔ev〕にまで変えるこことがで
きるため、１〔μm〕波長帯の光半導体材料として
注目されているAlxGayIn1-x-yAs4元化合物では
アルミニウム（Al）の枯渇現象が生じる。即ち、
これらはInP基板面に成長させるが、その基板は
高温度では燐（Ｐ）が解離蒸発するため、溶液温
度を余り高温とできずに、約700〔℃〕が限界とな
る。しかし、700〔℃〕の加熱温度では、
AlGaInAs溶液中の溶解Al量はXl Al＝0.0002（Xl Alは
溶液中のAl原子分率を示す）で、それでは精々
0.4〔μm〕程度の厚さしか成長できずに、それ以
上ではAlは枯渇し、含有されなくなる。しかも、
0.4〔μm〕の膜厚内においても、Alの組成勾配が
発生する。 However, it is not possible to prevent the disadvantages that the growth layer formed on the substrate surface has a composition gradient or that the growth elements are depleted. For example, it can be lattice matched to an InP substrate and the energy gap can be changed from 1.46 [ev] to 0.74 [ev], so it is attracting attention as an optical semiconductor material in the 1 [μm] wavelength band. In the Al x Ga y In 1-xy As quaternary compound, an aluminum (Al) depletion phenomenon occurs. That is,
These are grown on the surface of an InP substrate, but since phosphorus (P) dissociates and evaporates at high temperatures, the solution temperature cannot be raised too high, and the limit is about 700 [°C]. However, at a heating temperature of 700 [℃],
The amount of dissolved Al in the AlGaInAs solution is X l Al = 0.0002 (X l Al indicates the Al atomic fraction in the solution), so at most
It can only grow to a thickness of about 0.4 [μm], and if it grows beyond that, Al will be depleted and no longer contained. Moreover,
Even within a film thickness of 0.4 [μm], a compositional gradient of Al occurs.
本発明は液相エピタキシヤル成長におけるこの
ような溶質元素の枯渇あるいは成長層の組成勾配
を解消させることを目的とし、その特徴は、基板
上に多元系化合物を液相エピタキシヤル成長する
に際し、成長用元素を含む化合物固体を負電極、
基板を正電極とし、これらを成長物質の化合物を
溶解した溶液に浸漬し、前記電極間に電流を流し
て前記基板上に多元系化合物を成長するエレクト
ロエピタキシヤル成長を行うことを特徴とする半
導体結晶の製造方法であり、
第２図は本発明にかゝる成長ボートの断面構造
で、下部ボート２は同じく正電極に接続するが、
負電極は溶液３に浸漬した化合物固体１０に接続
する。そうすれば、基板１に柝出した溶質量に応
じて、溶液３中に化合物固体１０から溶質を補給
し溶質を枯渇させることは勿論、組成勾配を生ず
ることも少なくすることができる。 The purpose of the present invention is to eliminate such depletion of solute elements or composition gradient of the grown layer in liquid phase epitaxial growth. Compound solid containing elements for negative electrode,
A semiconductor characterized by electroepitaxial growth in which a substrate is used as a positive electrode, these are immersed in a solution containing a compound of a growth substance, and a current is passed between the electrodes to grow a multi-component compound on the substrate. Fig. 2 shows a cross-sectional structure of a growth boat according to the present invention, and the lower boat 2 is also connected to the positive electrode.
The negative electrode is connected to a compound solid 10 immersed in a solution 3. By doing so, it is possible to replenish the solute from the compound solid 10 into the solution 3 according to the amount of solute dispensed onto the substrate 1, and not only to deplete the solute but also to reduce the occurrence of a composition gradient.
今、この成長ボートを使用して、AlxGay
In1-x-yAs化合物を成長させた例を説明すると、
基板１は（100）面をもつInP基板、溶液３の成
分はIn＝4.4402（ｇ）、InAs＝0.8（ｇ）、Ga＝
0.01816（ｇ）、Al＝0.00022（ｇ）を配合して作成
する。化合物固体（ソース化合物）１０はGaAs
基板面上に液相エピタキシヤル成長法又は分子線
エピタキシヤル成長法でAl0.5Ga0.5Asからなる組
成をもつた３元化合物層を積層させたものを用い
る。先づ、成長ボートの上部ボート４と下部ボー
ト２をスライドし、溶液にInP基板が触れないよ
うに離して、約720〔℃〕に昇温し、溶液成分を充
分溶解して均一とした後、700〔℃〕まで降温す
る。次いで上部ボートと下部ボートをスライドし
てInP基板と溶液とを接触させ、ソース化合物１
０を溶液に浸漬する。そして、電流密度を10A／
cm3程度として、20分間通電し、膜厚２〔μm〕の成
長層を得た。その成長層の組成は凡そAl0.24
Ga0.24In0.52Asであつた。しかし、この例では膜
厚方向に多少の組成勾配が認められた。 Now using this grow boat, Al x Ga y
To explain an example of growing an In 1-xy As compound,
Substrate 1 is an InP substrate with (100) plane, and the components of solution 3 are In = 4.4402 (g), InAs = 0.8 (g), Ga =
Created by blending 0.01816 (g) and Al=0.00022 (g). Compound solid (source compound) 10 is GaAs
A ternary compound layer having a composition of Al 0.5 Ga 0.5 As is laminated on a substrate surface by a liquid phase epitaxial growth method or a molecular beam epitaxial growth method. First, slide the upper boat 4 and lower boat 2 of the growth boat, separate them so that the InP substrate does not touch the solution, and raise the temperature to about 720 [℃] to sufficiently dissolve the solution components and make them uniform. , the temperature drops to 700 [℃]. Next, slide the upper boat and lower boat to bring the InP substrate into contact with the solution, and add source compound 1.
0 into the solution. Then, set the current density to 10A/
A current was applied for 20 minutes at a temperature of about cm 3 to obtain a grown layer with a thickness of 2 [μm]. The composition of the growth layer is approximately Al 0.24
It was Ga 0.24 In 0.52 As. However, in this example, some composition gradient was observed in the film thickness direction.
以上は一実施例であるが、これから明らかなよ
うに、化合物固体１０を作成し、それは溶液の成
長温度では溶融しない融解温度をもつた化合物と
し、これを負電極にして溶液中に浸漬する。そし
て溶液中の溶質を絶えず補給すれば、基板上に同
一組成の成長層を限りなく成長させることができ
る。又、基板上の成長層組成、化合物固体組成、
電流密度および溶液組成の組み合わせを、種々検
討すれば組成勾配をなくすることも可能である。 The above is an example, but as is clear from this, a solid compound 10 is prepared, which is a compound having a melting temperature that does not melt at the growth temperature of the solution, and is immersed in the solution using this as a negative electrode. By constantly replenishing the solute in the solution, it is possible to grow an unlimited number of growth layers with the same composition on the substrate. In addition, the growth layer composition on the substrate, the compound solid composition,
It is also possible to eliminate the composition gradient by considering various combinations of current density and solution composition.
したがつて、本発明は従前よりの液相エピタキ
シヤル成長の制約を解消させる液相エピタキシヤ
ル成長層の形成法であり、光半導体装置などの品
質向上に極めて寄与するものである。 Therefore, the present invention is a method for forming a liquid phase epitaxial growth layer that eliminates the conventional limitations of liquid phase epitaxial growth, and greatly contributes to improving the quality of optical semiconductor devices and the like.
第１図は従来のエレクトロエピタキシヤル成長
用ボートの断面図、第２図は本発明にかゝるエレ
クトロエピタキシヤル成長用ボートの断面図であ
る。図中、１は基板、２は下部ボート、３は溶
液、４は上部ボート、５は絶縁体、１０は化合物
固体を示す。
FIG. 1 is a cross-sectional view of a conventional electro-epitaxial growth boat, and FIG. 2 is a cross-sectional view of an electro-epitaxial growth boat according to the present invention. In the figure, 1 is a substrate, 2 is a lower boat, 3 is a solution, 4 is an upper boat, 5 is an insulator, and 10 is a compound solid.
Claims (1)
成長するに際し、成長用元素を含む化合物固体を
負電極、基板を正電極とし、これらを成長物質の
化合物を溶解した溶液に浸漬し、前記電極間に電
流を流して前記基板上に多元系化合物を成長する
エレクトロエピタキシヤル成長を行うことを特徴
とする半導体結晶の製造方法。1. When growing a multi-component compound on a substrate by liquid phase epitaxial growth, the compound solid containing the growth element is used as a negative electrode, the substrate is used as a positive electrode, and these are immersed in a solution in which the compound of the growth substance is dissolved, and the 1. A method for manufacturing a semiconductor crystal, comprising performing electro-epitaxial growth in which a multi-component compound is grown on the substrate by applying a current to the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56159589A JPS5860534A (en) | 1981-10-06 | 1981-10-06 | Preparation of semiconductor crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56159589A JPS5860534A (en) | 1981-10-06 | 1981-10-06 | Preparation of semiconductor crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5860534A JPS5860534A (en) | 1983-04-11 |
| JPH0322052B2 true JPH0322052B2 (en) | 1991-03-26 |
Family
ID=15697004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56159589A Granted JPS5860534A (en) | 1981-10-06 | 1981-10-06 | Preparation of semiconductor crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5860534A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112825349B (en) * | 2019-11-20 | 2022-05-17 | 郑州宇通集团有限公司 | Composite positive electrode plate and lithium secondary battery |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4870473A (en) * | 1971-12-23 | 1973-09-25 |
-
1981
- 1981-10-06 JP JP56159589A patent/JPS5860534A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5860534A (en) | 1983-04-11 |
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