JPH03220718A - Manufacturing apparatus for semiconductor - Google Patents

Abstract

PURPOSE:To prevent a hot plate and a retaining plate from damaging by equally dividing the upper surface of the plate into sector-shaped zones, forming grooves folded concentrically at the zones, burying heaters in the grooves, and superposing quartz retaining plate on the hot plate. CONSTITUTION:In a semiconductor manufacturing apparatus in which a board 3 is provided on a panel heater 2 of a reaction chamber 1, chemical reaction of gas introduced is performed on the board 3 to form a thin film on the board by a CVD, sputtering, etc., disclike hot plates 12 equally divided into a plurality of sector-shaped zones 13 on the upper surface are provided on the heater 2. Further, grooves 14 formed by folding concentrically from the center to the periphery and from the periphery to the center at the zones 13, laterally long rectangular-sectional-shaped heaters 15 buried in the grooves, and a disclike retaining plate 15 made of quartz having satisfactory transmission of infrared rays to be superposed on the plate 12 are provided. Thus, it can prevent the hot plate and the retaining plate from damaging, thereby quickly heating.

Description

Detailed Description of the Invention [Industrial Application Field] The present invention is a CV method for forming a thin film on a substrate by causing a chemical reaction of a gas introduced on a substrate on a planar heating element in a reaction chamber.
D. Semiconductor manufacturing equipment such as sputtering.

In particular, it relates to sheet heating elements.

[Conventional technology]

In general, semiconductor manufacturing equipment includes a planar heating plate (2) provided in one reaction chamber (1) as shown in FIG.
A substrate (3) is placed on top, and the substrate (3) is heated to a high temperature by a heat generating plate (2) to form a film with the gas (4).
is introduced into the reaction chamber (1) and decomposed, reduced, and
oxidation.

A chemical reaction such as substitution is performed to form a desired complex on the substrate (3).

In addition, in the figure, (5) is a heater, and (6) is an electrode.

As shown in FIGS. 6 to 8, the conventional planar heating element (2) has an upper surface of a disc-shaped heating plate (7) made of a sintered ceramic that does not transmit well infrared rays. A spiral groove (8) is formed in the groove (8), a heater (9) with a circular cross section is embedded in the groove (8), and the upper and lower surfaces of the hot plate (7) are connected to the hot plate (7).
A metal plate made of STJ'S, Mo, etc. is provided on the upper surface of the upper presser plate aQ, and the substrate is placed on the plate. There is.

The cross section of the grooves (8) is a square with a side of about 1 mm, the interval between the grooves (8) in the radial direction is about 1 mm, and the diameter of the heater (9) is about 1 mm.

[Problem to be solved by the invention]

In the case of the conventional heating element (2), the groove (8-inch heater (
Since heater (9) is spiral-shaped, the heater (9) expands and expands when energized once, and the upper surface of the heating plate (7) is pressed against the upper presser plate OO1.
damage.

Furthermore, the heat from the heater (9) reaches the substrate (3) by conduction because the upper presser base and metal plate do not transmit infrared rays, and the substrate (3) cannot be heated rapidly.

The present invention has been made with the above-mentioned points in mind, and an object of the present invention is to provide a semiconductor manufacturing apparatus capable of rapid heating while preventing damage to the heating plate and the holding plate.

[Means to solve the problem]

In order to solve the above-mentioned problems, one aspect of the semiconductor manufacturing apparatus of the present invention is to provide a substrate on a planar heating element in a reaction chamber, and to cause a chemical reaction of the introduced gas to occur on the substrate.

A semiconductor manufacturing apparatus such as CVD or sputtering that forms a thin film on the substrate is equipped with a disk-shaped heating plate whose upper surface is equally divided into a plurality of fan-shaped sections, and a disk-shaped heating plate whose upper surface is equally divided into a plurality of sector-shaped sections; a groove formed by folding concentrically from the center side to the peripheral side and from the peripheral side to the center side, and a heater having a horizontally long rectangular cross section buried in the front. and a disk-shaped holding plate made of quartz that is polymerized on a heating plate and has good transmission of infrared rays.

[For production]

In the semiconductor manufacturing apparatus of the present invention configured as described above, the upper surface of the disc-shaped hot plate is divided into a plurality of fan-shaped sections, and a concentrically folded groove is formed in each section. A heater with a rectangular cross section that is long in the horizontal direction is buried in the groove, and a disc-shaped press plate made of quartz that transmits infrared rays is superimposed on the heating plate, so that the expansion of the heater in the circumferential direction is offset by folding. The heating plate is extremely small and does not damage the upper surface of the heating plate, and the cross section of the heater is long and flat in the horizontal direction, allowing for uniform heating without damaging the upper holding plate.

Furthermore, since the upper holding plate is made of quartz that transmits infrared rays well, the susceptor can be heated by radiation rather than conduction.
Rapid heating is possible, and power consumption can be significantly reduced.

〔Example〕

One embodiment will be described with reference to FIGS. 1 to 4.

In those drawings, 0 is a disc-shaped heating plate of the planar heating element (2), which is made of fused transparent quartz that transmits infrared rays well. α is a section formed by equally dividing the upper surface of the hot plate (2) into a plurality of sector shapes; the illustration shows four divisions.

a< is a groove formed by concentrically folding back for each section 0, and is formed from the center side to the periphery side (from the periphery side to the center side), and each section α4 Each kQΦ communicates with #)α of the adjacent section a3 on the center side or the peripheral side.

The curve is a heater embedded in the groove αΦ, and has a rectangular cross-sectional shape that is long in the horizontal direction, and is formed by punching from a plate, and has a width of 4 to 5 mm and a thickness of about 1 mm.

(IQ is the upper presser plate superimposed on the upper surface of the hot plate (2), made of the same material as the hot plate (2), and a part of the lower surface has grooves σ
4) is fitted on the upper side. The α force is a lower pressing plate superimposed on the lower surface of the hot plate (2), and is made of the same material as the hot plate (2).

(The binding is the housing of the planar heating element (2), 5us8
Consists of 04. The α bell is a susceptor on the upper holding plate QQ, on which a substrate (3) made of the same material as the heating plate (2) is placed.

As mentioned above, when the susceptor Q is made of quartz that transmits infrared rays well, the heat from the heater α passes through the upper holding plate αQ and the susceptors, and is transferred to the substrate (3) as radiant heat. Therefore, the substrate (3) can be heated more rapidly.

Among them, when carbon is used for the susceptor.

The temperature uniformity on the upper surface of the susceptor 09) can thus be improved.

If the atmosphere in the reaction chamber (1) contains H2, halogen gas, etc., a metal or coated carphone may be used as the susceptor.

〔Effect of the invention〕

Since this @ version is configured as explained above, it produces the effects described below.

The upper surface of the hot plate q-force is equally divided into a plurality of door-shaped sections α east, and a concentrically folded groove σ→ is formed in each section α1, and a long cross-sectional rectangle in the horizontal direction is formed in the groove αΦ. Shape heater Q■
is buried, and a holding plate σQ made of quartz that transmits infrared rays is polymerized on the heating plate.

The expansion of the heater Q51 in the circumferential direction is canceled out by the bending, so that the upper surface of the hot plate (2), that is, the protrusion between the radial grooves (14), is prevented from being damaged. ,
Since the heater Q51 is flat, it can heat the upper presser plate α uniformly without damaging it.

In addition, since the upper presser plate QO is made of quartz, which has a good infrared rays tolerance, the heater α can heat the heat sink by radiation, making rapid heating possible and greatly reducing power consumption. can be reduced.

[Brief explanation of drawings]

1 to 4 show essential parts of an embodiment of the semiconductor manufacturing apparatus of the present invention, FIG. 1 is a partially cutaway view of a planar heating element, and FIG. 2 is a cutaway front view of FIG. 1. figure. Fig. 3 is an enlarged view of a part of Fig. 2, Fig. 4 is a partially cutaway front view with the planar heating element installed, Fig. 5 is a schematic front view of the reaction chamber, and Figs. Figure 8 shows a conventional example;
The figure is a partially cutaway view of the planar heating element, FIG. 7 is a cutaway front view of FIG. 6, and FIG. 8 is a partially enlarged view of FIG. 7. (1)...Reaction chamber, (2)...Planar heating element, (3)
...Substrate, α...hot plate, σ1...section, 0x.
...Groove, 05)...Heater, αQ...Press plate.

Claims (1)

[Scope of Claims] 1. Semiconductor manufacturing using CVD, sputtering, etc., in which a substrate is provided on a planar heating element in a reaction chamber, and a chemical reaction of gas introduced on the substrate is performed to form a thin film on the substrate. In the device, the planar heating element includes a disk-shaped heating plate whose upper surface is equally divided into a plurality of fan-shaped sections, and a circular heating plate for each section from the center side to the periphery side, and from the periphery side to the center. A groove formed by folding back concentrically toward the bottom side, a heater with a rectangular cross section that is long in the horizontal direction and buried in the groove, and a heater made of quartz that is superimposed on the hot plate and has good transmission of infrared rays. A semiconductor manufacturing device configured with a disk-shaped presser plate.