JPH0322407U - - Google Patents
Info
- Publication number
- JPH0322407U JPH0322407U JP8330189U JP8330189U JPH0322407U JP H0322407 U JPH0322407 U JP H0322407U JP 8330189 U JP8330189 U JP 8330189U JP 8330189 U JP8330189 U JP 8330189U JP H0322407 U JPH0322407 U JP H0322407U
- Authority
- JP
- Japan
- Prior art keywords
- package
- circuit board
- matching circuit
- semiconductor element
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/547—Dispositions of multiple bond wires
- H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
Landscapes
- Microwave Amplifiers (AREA)
- Waveguides (AREA)
Description
第１図はこの考案の一実施例による高周波高出
力用半導体装置を示す斜視図、第２図は従来の高
周波高出力用半導体装置を示す斜視図である。
図において、１……パツケージ、２……半導体
素子、３……入力整合回路基板、４……出力整合
回路基板、５……導体パターン、６……金属細線
、７……ゲート外部リード、８……ドレイン外部
リード、９……ストレート形の金属体、１０……
Ｈ形の金属体である。
FIG. 1 is a perspective view showing a high frequency, high power semiconductor device according to an embodiment of the invention, and FIG. 2 is a perspective view of a conventional high frequency, high power semiconductor device. In the figure, 1...Package, 2...Semiconductor element, 3...Input matching circuit board, 4...Output matching circuit board, 5...Conductor pattern, 6...Thin metal wire, 7...Gate external lead, 8 ...Drain external lead, 9...Straight metal body, 10...
It is an H-shaped metal body.
Claims (1)
およびマイクロストリツプライン形のインピーダ
ンス変換機能を備えた整合回路基板が設けられ、
前記半導体素子と整合回路基板とが金属細線によ
り接続され、さらに前記パツケージの開口部が金
属板で封止された高周波高出力用半導体装置にお
いて、前記半導体素子が並列に接続された整合回
路基板をそれぞれ仕切るように前記パツケージ内
部に金属体を設けたことを特徴とする高周波高出
力用半導体装置。 A semiconductor element and a matching circuit board with a microstripline type impedance conversion function are installed inside a package mainly made of metal.
In a high-frequency, high-output semiconductor device in which the semiconductor element and the matching circuit board are connected by a thin metal wire, and the opening of the package is further sealed with a metal plate, the matching circuit board to which the semiconductor element is connected in parallel is provided. A semiconductor device for high frequency and high output, characterized in that a metal body is provided inside the package so as to partition each package.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8330189U JPH0322407U (en) | 1989-07-14 | 1989-07-14 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8330189U JPH0322407U (en) | 1989-07-14 | 1989-07-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0322407U true JPH0322407U (en) | 1991-03-07 |
Family
ID=31630851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8330189U Pending JPH0322407U (en) | 1989-07-14 | 1989-07-14 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0322407U (en) |
-
1989
- 1989-07-14 JP JP8330189U patent/JPH0322407U/ja active Pending