JPH03224201A - Resistant paste composition - Google Patents
Resistant paste compositionInfo
- Publication number
- JPH03224201A JPH03224201A JP2002697A JP269790A JPH03224201A JP H03224201 A JPH03224201 A JP H03224201A JP 2002697 A JP2002697 A JP 2002697A JP 269790 A JP269790 A JP 269790A JP H03224201 A JPH03224201 A JP H03224201A
- Authority
- JP
- Japan
- Prior art keywords
- weight
- glass frit
- pbo
- parts
- paste composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 31
- 239000011521 glass Substances 0.000 claims abstract description 30
- 229910052793 cadmium Inorganic materials 0.000 claims abstract description 4
- 229910052738 indium Inorganic materials 0.000 claims abstract description 4
- 229910052741 iridium Inorganic materials 0.000 claims abstract description 4
- 229910052703 rhodium Inorganic materials 0.000 claims abstract description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 4
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 3
- 150000001875 compounds Chemical class 0.000 claims abstract 3
- 229910052727 yttrium Inorganic materials 0.000 claims abstract 3
- 229910052745 lead Inorganic materials 0.000 claims abstract 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 10
- 229910011255 B2O3 Inorganic materials 0.000 abstract description 5
- 229910052681 coesite Inorganic materials 0.000 abstract description 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- 239000000377 silicon dioxide Substances 0.000 abstract description 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 5
- 229910052682 stishovite Inorganic materials 0.000 abstract description 5
- 229910052905 tridymite Inorganic materials 0.000 abstract description 5
- 239000004020 conductor Substances 0.000 abstract description 4
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 abstract description 4
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 abstract 3
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 abstract 3
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 229910052746 lanthanum Inorganic materials 0.000 abstract 1
- 238000010304 firing Methods 0.000 description 7
- 239000000126 substance Substances 0.000 description 6
- 238000002156 mixing Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000005388 borosilicate glass Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
Landscapes
- Non-Adjustable Resistors (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、パイロクロール型酸化物から成る導電性物質
とガラスフリットから構成される抵抗ペースト組成物に
関し、特に、抵抗値変動が少なくＴＣＨの小さなペース
ト組成物の提供を目的とするものである。Detailed Description of the Invention [Industrial Application Field] The present invention relates to a resistance paste composition composed of a conductive substance made of pyrochlore type oxide and glass frit, and in particular, it relates to a resistance paste composition that has a small resistance value fluctuation and a TCH. The purpose is to provide small paste compositions.
［従来技術］
従来、ＨＩＣ（混成集積回路）等の厚膜抵抗は、ＲｕＯ
２（酸化ルテニウム）またはルテニウムの複合酸化物な
どからなる導電性粉末とホウケイ酸またはホウケイ酸鉛
系ガラス粉末との混合物に有機ビヒクルを加えて混練し
たペーストを用い、アルミナ等のセラミック基板に印刷
した後、焼成して形成されている。[Prior art] Conventionally, thick film resistors such as HIC (hybrid integrated circuit) are made of RuO.
A paste prepared by adding an organic vehicle to a mixture of conductive powder made of 2 (ruthenium oxide) or a composite oxide of ruthenium and borosilicate or lead borosilicate glass powder was used to print on a ceramic substrate such as alumina. After that, it is formed by firing.
この場合、ペースト中に配合されるガラスフリットは抵
抗値の調整を行うと同時に、基板との接着性、抵抗の安
定性等を向上させる役割を担っている。このような目的
で使用されてきたガラスフリットとしては、ホウケイ酸
鉛系ガラスが主流であり、しかもガラスフリットの全量
基準で４重量％以上の８２０．を含有するガラスフリッ
トを用いることが必要とされていた。一方、導電性物質
としてパイロクロール型の複合酸化物を使用すると、焼
成過程において非常に微細なＲｕ Ｏ２等が析出して遊
離状態で存在するようになるため、これが焼成時におい
て焼成条件の変動に敏感に反応して、抵抗値の変動を大
きくする要因となっていた。In this case, the glass frit mixed into the paste plays a role in adjusting the resistance value and at the same time improving adhesiveness with the substrate, resistance stability, etc. Lead borosilicate glass is the mainstream glass frit used for this purpose, and moreover, it contains 820.8% by weight or more based on the total amount of glass frit. There was a need to use a glass frit containing . On the other hand, when a pyrochlore-type composite oxide is used as a conductive material, very fine RuO2 etc. precipitate during the firing process and exist in a free state, which can be affected by changes in firing conditions during firing. It reacts sensitively and becomes a factor that increases the fluctuation of resistance value.
パイロクロール型酸化物の抵抗温度係数（以下ＴＣＲと
いう）は本来零に近いものであるが、上記のような遊離
状態のＲｕＯ７等が存在するとその影響を強く受け、Ｔ
ＣＲ値がプラス側へ大きく傾くと同時に、ガラスとの混
合比率の変動によって生しるＴＣＲ値の変動が非常に大
きくなることが知られている。The temperature coefficient of resistance (hereinafter referred to as TCR) of pyrochlore-type oxides is originally close to zero, but if RuO7, etc. in the free state as mentioned above is present, it is strongly influenced by it, and the TCR
It is known that when the CR value tilts significantly toward the positive side, the TCR value fluctuates significantly due to fluctuations in the mixing ratio with glass.
［発明が解決しようとする課題］
上述の理由により、従来の方法ではＴＣＲの変動が大き
く、ＨｏｔＴＣＲ値とＣｏ１ｄＴＣＲ値との差が最低で
も１２０〜１５０ ｐｐｍ／℃となるため、焼成後通常
の方法により厳密に調整してもＴＣＲ≦±５０１）Ｉ）
ｆｆｌ／℃以下にすることはできなかった。[Problems to be Solved by the Invention] For the above-mentioned reasons, the conventional method causes large fluctuations in TCR, and the difference between the HotTCR value and the Co1dTCR value is at least 120 to 150 ppm/°C. Even if adjusted more precisely, TCR≦±501)I)
It was not possible to reduce the temperature to below ffl/°C.
このため、抵抗値変動が小さい上に、ＴＣＲ絶対値が小
さく且つＨＯｔＴＣＲとＣｏ１ｄＴ ＣＲとの差が１０
０ ｐｐｍ／’Ｃ以内の抵抗ペーストが得られるように
するための何らかの解決手段が求められていた。Therefore, the resistance value fluctuation is small, the TCR absolute value is small, and the difference between HOtTCR and Co1dTCR is 10
There was a need for some kind of solution to make it possible to obtain a resistive paste within 0 ppm/'C.
［課題を解決するための手段］
本発明者等は斯る課題を解決するため鋭意研究したとこ
ろ、焼成過程で生成するＲｕＯ２を固定する手段として
、ある特定範囲の組成を持つガラスフリットを使用する
ことによって、上記目的に適う優れた効果が得られるこ
とを見い出し本発明に到達することができた。[Means for Solving the Problems] The present inventors conducted extensive research to solve the problems and found that a glass frit having a composition within a certain range was used as a means for fixing RuO2 generated during the firing process. The present inventors have discovered that, by doing so, excellent effects meeting the above objectives can be obtained, and the present invention has been achieved.
すなわち本発明は、少なくとも１種のパイロクロール型
酸化物、好ましくは
式Ｍ２ Ｍ′２Ｏ７−
（ただし、ＭはＹＳＬａ、ＴＪ７ 、Ｉ ｎ、Ｃｄ。That is, the present invention provides at least one pyrochlore type oxide, preferably of the formula M2M'2O7-, where M is YSLa, TJ7, In, Cd.
ｐｂおよびＢｉからなる群より選ばれる同一のまたは異
なる元素であり、Ｍ′はＲｕＳ ＩｒおよびＲｈからな
る群より選ばれる同一のまたは異なる元素である。）で
表されるパイロクロール型酸化物から成る導電性物質５
〜９５重量部に、ＰｂＯ６０〜９０重量％と５ｉ０２１
０〜４０重量％とから成るガラスフリット（ただしＰｂ
ＯとＳ ｉ Ｏ２との合計は１００重量％）または上記
混合物にさらにＢ２０３０．１〜４重量％を加えたガラ
スフリット（ただしｐｂｏと５ｉｎ２とＢ２０．の合計
は１００重量％）９５〜５重量部を導電性物質とガラス
−リットとの合計量が１００重量部となるように配合し
た組成物であることを特徴とする抵抗ペースト組成物を
提供するものである。The same or different elements are selected from the group consisting of pb and Bi, and M' is the same or different elements selected from the group consisting of RuS Ir and Rh. ) Conductive substance 5 made of pyrochlore type oxide
~95 parts by weight, 60-90% by weight of PbO and 5i021
Glass frit consisting of 0 to 40% by weight (however, Pb
(The total of O and SiO2 is 100% by weight) or a glass frit obtained by adding 0.1 to 4% by weight of B203 to the above mixture (however, the total of pbo, 5in2, and B20. is 100% by weight) 95 to 5 parts by weight The present invention provides a resistance paste composition characterized in that the composition contains a conductive material and glass-lit in a total amount of 100 parts by weight.
［作 用］
本発明において用いられるガラスフリットの組成は、ガ
ラスフリットの全量を１００とする重量％で６０≦Ｐｂ
Ｏ≦９０．１０≦５ｉｎ２≦４０．０≦８２０３≦４の
条件を満たすものであるが、この範囲が特に好ましい理
由は次の通りである。[Function] The composition of the glass frit used in the present invention is 60≦Pb in weight% with the total amount of glass frit being 100.
The condition O≦90.10≦5in2≦40.0≦8203≦4 is satisfied, and the reason why this range is particularly preferable is as follows.
ガラスフリット中に含まれるＢ２０．の量が、遊離状態
にあるＲｕＯ２を固定する反応に最も強く影響を及ぼす
ことが確認された。すなわち、Ｂ２Ｏ３の量が上記基準
で４重量％を越えるとＲｕＯ２がＰｂＲｕ０．あるいは
Ｐｂ２Ｒｕ０７−８の形で固定され難くなるため、Ｂ２
Ｏ３の添加量は４重量％以下とすることが必要である。B20 contained in the glass frit. It was confirmed that the amount of RuO2 has the strongest effect on the reaction of fixing RuO2 in the free state. That is, when the amount of B2O3 exceeds 4% by weight based on the above criteria, RuO2 becomes PbRu0. Alternatively, it becomes difficult to fix in the form of Pb2Ru07-8, so B2
The amount of O3 added must be 4% by weight or less.
また、ＰｂＯと５ｉｎ２の配合比率に関しては、両者の
合計を１００重量％とした場合ＰｂＯが９０重量％以上
、したがって５ｉｎ２が１０重量％以下の場合は、抵抗
値の安定性が悪く、逆にＰｂＯが６０重量％以下、した
かって５１０２が４０重量％以上てはｔｌｏｔＴｃＲと
Ｃｏ１ｄＴ ＣＲとの差が１００ ｐｐｍ／℃以上とな
り、本発明の目的の一つであるＴＣＲの差を±５０１）
Ｉ）Ｉｌｌ／℃以内にするという目的が達成できない。Regarding the blending ratio of PbO and 5in2, if the total of both is 100% by weight, if PbO is 90% by weight or more, and therefore 5in2 is 10% by weight or less, the stability of the resistance value will be poor; If 5102 is 60% by weight or less, and therefore 5102 is 40% by weight or more, the difference between tlotTcR and ColdTCR will be 100 ppm/°C or more, and the difference in TCR, which is one of the objects of the present invention, will be ±501)
I) The purpose of keeping the temperature within Ill/°C cannot be achieved.
上記の理由により、ＰｂＯとＳｉＯ２の配合は、それぞ
れ６０≦ＰｂＯ≦９０．１０≦５ｉｎ２≦４０（重量％
）の範囲と定めた。また、本発明法において導電性物質
として使用するパイロクロール型酸化物として好ましく
は、
式Ｍ２Ｍ′２Ｏ．−。For the above reasons, the formulation of PbO and SiO2 is 60≦PbO≦90.10≦5in2≦40 (wt%), respectively.
). Further, the pyrochlore type oxide used as the conductive substance in the method of the present invention preferably has the formula M2M'2O. −.
（ただし、ＭはＹ、Ｌａ５ＴＩＳ Ｉｎ、Ｃｄ。(However, M is Y, La5TIS In, Cd.
ｐｂおよびＢ１からなる群より選ばれる同一のまたは異
なる元素であり、Ｍ′はＲｕ、ＩｒおよびＲｈからなる
群より選ばれる同一のまたは異なる元素である。）で表
されるものを用い、ガラスフリットと適量混合してペー
スト組成物とすることができる。導電性物質と、ガラス
フリットとの配合比は従来の抵抗ペーストの場合と同じ
でよく、通常前者と後者の重量比は（５〜９５） ：
（９５〜５）である。They are the same or different elements selected from the group consisting of pb and B1, and M' is the same or different elements selected from the group consisting of Ru, Ir and Rh. ) can be used to prepare a paste composition by mixing an appropriate amount with glass frit. The mixing ratio of the conductive substance and the glass frit may be the same as in the case of conventional resistance paste, and the weight ratio of the former to the latter is usually (5 to 95):
(95-5).
以下、実施例により詳細に説明する。Hereinafter, this will be explained in detail using examples.
［実施例１］
第１表に示す６つの異なる組成のガラスフリット（表中
、Ａ−Ｃは本発明品、Ｄ−Ｆは比較品である）をそれぞ
れ調製した。これらを、導電性物質としてのパイロクロ
ール型酸化物Ｂｉ２Ｒｕ２Ｏ７と、第２表および第３表
に示す配合比で混合してペースト組成物をつくり、該ペ
ースト組成物を通常の方法によりアルミニウム基板に印
刷して、１５０℃で１０分間乾燥した後、ピーク温度８
５０℃にて１０分間ベルト式焼成炉で焼成した。[Example 1] Glass frits having six different compositions shown in Table 1 (in the table, A to C are products of the present invention and D to F are comparative products) were prepared. A paste composition is prepared by mixing these with pyrochlore type oxide Bi2Ru2O7 as a conductive substance at the compounding ratio shown in Tables 2 and 3, and the paste composition is printed on an aluminum substrate by a conventional method. After drying at 150℃ for 10 minutes, the peak temperature was 8.
It was fired in a belt-type firing furnace at 50°C for 10 minutes.
得られた抵抗体のシート抵抗、ＴＣＲ（ＨｏｔおよびＣ
ｏ１ｄ）および抵抗変化率△Ｒ（％）をそれぞれ測定し
た。このようにして得られた特性値のうち、Ａ、Ｂおよ
びＣの配合のガラスフリットを使用したものを、第２表
に示した。これらの結果から、Ａ、ＢおよびＣの配合の
ガラスフリットを用いたもののＴＣＲは全て±１５０
ｐｐｍ／’Ｃの範囲内にあることがわかる。Sheet resistance, TCR (Hot and C
o1d) and resistance change rate ΔR (%) were measured. Among the characteristic values obtained in this manner, those using glass frits having compositions A, B, and C are shown in Table 2. From these results, the TCR of glass frits with compositions A, B, and C was all ±150.
It can be seen that it is within the range of ppm/'C.
また、この場合のＨｏｔＴ ＣＲとＣｏ１ｄＴ ＣＲと
の差は４０〜６０１３Ｉ）Ｉ！１／”Ｃの範囲内にある
ため、従来用いられている調整剤を添加して調整するこ
とにより容易に≦５０ ｐｐｍ／”Ｃ以内にすることが
できた。Also, the difference between HotT CR and ColdT CR in this case is 40 to 6013I)I! Since it is within the range of 1/"C, it could be easily brought within 50 ppm/"C by adjusting by adding a conventionally used regulator.
また高温放置による安定性についても何ら問題がなかっ
た。Further, there were no problems with stability due to high temperature storage.
［比較例１］
第１表に示す組成のガラスフリットのうちＤ〜Ｆを用い
て、実施例１と同様の手段で焼結体を得た。[Comparative Example 1] A sintered body was obtained in the same manner as in Example 1 using glass frits D to F having the compositions shown in Table 1.
得られた焼結体のシート抵抗、ＴＣＲ等を実施例１と同
様にして測定し、結果を第３表に示した。The sheet resistance, TCR, etc. of the obtained sintered body were measured in the same manner as in Example 1, and the results are shown in Table 3.
その結果、ガラスフリット中のＰｂＯが６０重量％より
少なくなると安定性は問題がないが、ＨｏｔＴＣＲとＣ
ｏ１ｄＴ ＣＲとの差が１００ ｐｐＩＩＩ／”Ｃ以上
となるため、調整困難となることがわかった。As a result, when PbO in the glass frit was less than 60% by weight, there was no problem with stability, but HotTCR and C
It was found that adjustment was difficult because the difference from o1dT CR was 100 ppIII/''C or more.
また、ＰｂＯが９０重量％より多いガラス配合では安定
性が悪くなり、一方、Ｂ２Ｏ３が４重量％を越えるとＨ
ｏｔＴ ＣＲとＣｏ１ｄＴ ＣＲとの差が１００ｐｐＩ
ｌｌ／℃以上となり、最終的に±５０ ｐｐｓ／’ｃに
調整することが困難であった。Furthermore, glass formulations containing more than 90% by weight of PbO result in poor stability, while on the other hand, when B2O3 exceeds 4% by weight, H
The difference between otT CR and Co1dT CR is 100 ppI
11/°C or more, and it was difficult to finally adjust it to ±50 pps/'c.
なお、実施例１（第２表）および比較例１（第３表）に
示したシート抵抗は、抵抗体の幅Ｌｍｍ、長さＬ＋ｕで
膜厚１２伽の時の抵抗値であり、抵抗変化率△Ｒは、１
５０℃で１，０００ｈｒ保持した後の抵抗値をＲ１とし
、初期抵抗値をＲ８とじた場合の抵抗値の変化割合を、
計算式
％式％）
［発明の効果コ
本発明では、上述のようにパイロクロール型酸化物を導
電性物質として用いるが、焼成時に発生する遊離状態の
ＲｕＯ２等を特定組成のガラスフリット使用により固定
することができるので、ＨｏｔＴＣＲとＣｏ１ｄＴ Ｃ
Ｒとの差をＬＯＯｐｐｍ／℃以内にすることが容易かつ
確実にできるのと同時にＴＣＲ絶対値の小さい抵抗膜か
得られのて、この差をさらに５０ｐｐｍ／℃内に調整す
ることが容易にできるという効果がある。The sheet resistance shown in Example 1 (Table 2) and Comparative Example 1 (Table 3) is the resistance value when the resistor has a width of Lmm, a length of L+u, and a film thickness of 12. The rate △R is 1
When the resistance value after being held at 50°C for 1,000 hours is R1, and the initial resistance value is divided by R8, the rate of change in resistance value is:
Calculation formula % formula %) [Effects of the invention In the present invention, pyrochlore type oxide is used as a conductive substance as described above, but free RuO2 etc. generated during firing are fixed by using a glass frit with a specific composition. HotTCR and Co1dTC
Since it is possible to easily and reliably reduce the difference with R to within LOOppm/℃, and at the same time obtain a resistive film with a small absolute TCR value, it is easy to further adjust this difference to within 50 ppm/℃. There is an effect.
Claims (3)
５重量部とガラスフリット９５〜５重量部とを、両者の
合計が１００重量部となるように配合した混合物からな
る組成物であって、該組成物中の前記ガラスフリットが
、６０〜９０重量％のＰｂＯと１０〜４０重量％のＳｉ
Ｏ＿２とを合計１００重量％となるように配合した混合
物であることを特徴とする抵抗ペースト組成物。(1) At least one pyrochlore type oxide 5 to 9
5 parts by weight of glass frit and 95 to 5 parts by weight of glass frit in a total of 100 parts by weight, wherein the glass frit in the composition is 60 to 90 parts by weight. % PbO and 10-40 wt% Si
A resistance paste composition characterized in that it is a mixture containing O_2 in a total amount of 100% by weight.
５重量部とガラスフリット９５〜５重量部とを、両者の
合計が１００重量部となるように配合した混合物からな
る組成物であって、該組成物中の前記ガラスフリットが
、６０〜９０重量％のＰｂＯと１０〜４０重量％のＳｉ
Ｏ＿２と０．１〜４重量％のＢ＿２Ｏ＿３とを合計１０
０重量％となるように配合した混合物であることを特徴
とする抵抗ペースト組成物。(2) At least one pyrochlore type oxide 5 to 9
5 parts by weight of glass frit and 95 to 5 parts by weight of glass frit in a total of 100 parts by weight, wherein the glass frit in the composition is 60 to 90 parts by weight. % PbO and 10-40 wt% Si
A total of 10 O_2 and 0.1 to 4% by weight of B_2O_3
A resistance paste composition characterized in that it is a mixture blended so that the content thereof is 0% by weight.
びＢｉからなる群より選ばれる同一のまたは異なる元素
であり、Ｍ′はＲｕ、ＩｒおよびＲｈからなる群より選
ばれる同一のまたは異なる元素である。）で表される化
合物であることを特徴とする請求項１または２に記載の
抵抗ペースト組成物。(3) The pyrochlore type oxide has the formula M_2M'_2O_7_-_x (where M is the same or different element selected from the group consisting of Y, La, Tl, In, Cd, Pb and Bi, and M 3. The resistive paste composition according to claim 1 or 2, wherein the resistive paste composition is a compound represented by the following formula: ' is the same or different element selected from the group consisting of Ru, Ir, and Rh.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1-325019 | 1989-12-15 | ||
| JP32501989 | 1989-12-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03224201A true JPH03224201A (en) | 1991-10-03 |
Family
ID=18172233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002697A Pending JPH03224201A (en) | 1989-12-15 | 1990-01-10 | Resistant paste composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03224201A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003054953A (en) * | 2001-08-22 | 2003-02-26 | Japan Science & Technology Corp | Pyrochlore conductive substance |
-
1990
- 1990-01-10 JP JP2002697A patent/JPH03224201A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003054953A (en) * | 2001-08-22 | 2003-02-26 | Japan Science & Technology Corp | Pyrochlore conductive substance |
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