JPH0322424A - Load-lock chamber - Google Patents

Load-lock chamber

Info

Publication number
JPH0322424A
JPH0322424A JP1157720A JP15772089A JPH0322424A JP H0322424 A JPH0322424 A JP H0322424A JP 1157720 A JP1157720 A JP 1157720A JP 15772089 A JP15772089 A JP 15772089A JP H0322424 A JPH0322424 A JP H0322424A
Authority
JP
Japan
Prior art keywords
atmospheric
valve
vacuum
air
atmospheric pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1157720A
Other languages
Japanese (ja)
Inventor
Takamoto Fukushima
福島　崇元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP1157720A priority Critical patent/JPH0322424A/en
Publication of JPH0322424A publication Critical patent/JPH0322424A/en
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To open the atmospheric-air side gate valve of a vacuum spare chamber, and to prevent the generation of dust by installing an atmospheric-air opening valve. CONSTITUTION:An atmospheric-air side gate valve 3 for passing a semiconductor wafer 2 and a vacuum-side gate valve 4 are mounted before and behind a vacuum spare chamber 1. An N2-gas introducing valve 5, an atmospheric pressure sensor 6 and an atmospheric-air opening valve 7 are set up. The inside of the chamber 1 has a carrying mechanism 8 for carrying the semiconductor wafer 2. The atmospheric-air intake 9 of the atmospheric-air opening valve 7 is connected through a parting plate 10. The atmospheric-air opening valve 7 is operated at timing opened after the atmospheric pressure sensor 6 is worked by N2-gas introduced from the N2-gas introducing valve 5. The atmospheric-air side gate valve 3 is opened, and the semiconductor wafer 2 is carried to the atmospheric air side.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は真空予備室に関し、特に半導体製造装置の真空
予備室に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a vacuum preliminary chamber, and particularly to a vacuum preliminary chamber of a semiconductor manufacturing apparatus.

〔従来の技術〕[Conventional technology]

従来の半導体製造装置の真空予備室は、第３図に示すよ
うに、バルブ５によりＮ２ガスを真空予備室１の内部に
導入して、真空予備室１内の気圧を大気圧に等しくなる
ようにし、これを大気圧センサ６により感知して大気側
ゲートバルブ３を開く構造となっていた。As shown in FIG. 3, the vacuum preliminary chamber of a conventional semiconductor manufacturing apparatus introduces N2 gas into the vacuum preliminary chamber 1 through a valve 5 to make the pressure inside the vacuum preliminary chamber 1 equal to atmospheric pressure. This is sensed by an atmospheric pressure sensor 6 and the atmospheric side gate valve 3 is opened.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の真空予備室は、大気圧センサにて、室内
の圧力を検知し大気側のゲートバルブを開ける構造とな
っているため、大気圧センサの検出誤差により真空予備
室内の圧力が大気圧と同じにならず、真空処理室のゲー
トバルプが開く瞬間差圧によりガスの流れが生じるとい
う欠点がある。このガスの流れにより微細な塵埃が半導
体ウェーハ上に付着しＩＣの歩留り低下の原因となって
いた。The conventional vacuum preliminary chamber described above has a structure in which an atmospheric pressure sensor detects the pressure inside the chamber and opens the gate valve on the atmospheric side. Therefore, due to a detection error of the atmospheric pressure sensor, the pressure in the vacuum preliminary chamber is lower than the atmospheric pressure. However, there is a drawback that a gas flow occurs due to the instantaneous pressure difference when the gate valve of the vacuum processing chamber opens. This gas flow causes fine dust to adhere to the semiconductor wafer, causing a decrease in the yield of ICs.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の半導体製造装置の真空予備室は大気開放バルブ
を有している。The vacuum preliminary chamber of the semiconductor manufacturing apparatus of the present invention has an atmosphere release valve.

〔実施例〕〔Example〕

次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第１図は本発明の第１の実施例の断面図である。FIG. 1 is a sectional view of a first embodiment of the invention.

真空予備室１は半導体ウェーハ２が通るための大気側ゲ
ートバルブ３と真空側ゲートバルブ４が前後に設けられ
、Ｎ２ガス導入バルブ５と大気圧センサ６と大気開放バ
ルブ７が取付けられた構造となっており、内部には半導
体ウェーハ２を搬送するための搬送機構８を有する。大
気開放バルブ７の大気取入れ口９は仕切り板１０を通し
て接続開き半導体ウェーハ２を大気側へ搬送する。The vacuum preliminary chamber 1 has a structure in which an atmosphere-side gate valve 3 and a vacuum-side gate valve 4 are provided at the front and back through which the semiconductor wafer 2 passes, and an N2 gas introduction valve 5, an atmospheric pressure sensor 6, and an atmosphere release valve 7 are attached. It has a transport mechanism 8 for transporting the semiconductor wafer 2 inside. The atmosphere intake port 9 of the atmosphere release valve 7 is connected through the partition plate 10 to transport the semiconductor wafer 2 to the atmosphere side.

第２図は本発明の第２の実施例の断面図である。FIG. 2 is a sectional view of a second embodiment of the invention.

本実施例では実施例１の大気開放バルブ７と真空予備室
１の配管の途中に流量制御弁１１を有する。In this embodiment, a flow control valve 11 is provided in the middle of the piping between the atmosphere release valve 7 of the first embodiment and the vacuum preliminary chamber 1.

この実施例では、ガスの流速を落とせるため予備室内の
塵埃の舞い上がりを防止する利点がある。This embodiment has the advantage of preventing dust from flying up in the preliminary chamber because the gas flow rate can be reduced.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は大気開放バルブを追加する
事により真空予備室の大気側ゲートバルブが開く塵埃の
発生を防止できる効果がある。As explained above, the present invention has the effect of preventing the generation of dust when the atmosphere side gate valve of the vacuum preliminary chamber is opened by adding an atmosphere release valve.

【図面の簡単な説明】 第１図及び第２図は本発明の第１及び第２の実施例の断
面図、第３図は従来の真空予備室断面図である。 １・・・真空予備室、２・・・半導体ウェーハ、３・・
・大気側ゲートバルプ、４・・・真空側ゲートバルプ、
５・・・Ｎ２ガス導入バルプ、６・・・大気圧センサー
、７・・・大気開放バルプ、８・・・搬送機構、９・・
・大気取入れ口、１０・・・仕切り板、１１・・・流量
制御弁。BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1 and 2 are cross-sectional views of first and second embodiments of the present invention, and FIG. 3 is a cross-sectional view of a conventional vacuum preliminary chamber. 1... Vacuum preliminary chamber, 2... Semiconductor wafer, 3...
・Atmospheric side gate valve, 4...Vacuum side gate valve,
5...N2 gas introduction valve, 6...Atmospheric pressure sensor, 7...Atmospheric release valve, 8...Transportation mechanism, 9...
-Atmospheric intake, 10...partition plate, 11...flow control valve.

Claims (1)

【特許請求の範囲】[Claims] 　不活性ガス導入バルブと、前記不活性導入バルブより
導入した不活性ガスの圧力が大気圧になるのを検出する
大気圧センサーとを有する真空予備室において、前記大
気圧センサーが前記真空予備室内の圧力を大気圧と殆ん
ど等しいと検出した信号により作動して真空予備室内を
外気に接続する大気開放バルプを備えたことを特徴とす
る真空予備室。In a vacuum preparatory chamber having an inert gas introduction valve and an atmospheric pressure sensor that detects when the pressure of the inert gas introduced from the inert gas introduction valve becomes atmospheric pressure, the atmospheric pressure sensor A vacuum preliminary chamber characterized in that it is equipped with an atmosphere opening valve which connects the vacuum preliminary chamber to the outside air by being actuated by a signal that detects that the pressure is almost equal to atmospheric pressure.
JP1157720A 1989-06-19 1989-06-19 Load-lock chamber Pending JPH0322424A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1157720A JPH0322424A (en) 1989-06-19 1989-06-19 Load-lock chamber

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1157720A JPH0322424A (en) 1989-06-19 1989-06-19 Load-lock chamber

Publications (1)

Publication Number Publication Date
JPH0322424A true JPH0322424A (en) 1991-01-30

Family

ID=15655900

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1157720A Pending JPH0322424A (en) 1989-06-19 1989-06-19 Load-lock chamber

Country Status (1)

Country Link
JP (1) JPH0322424A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106222626A (en) * 2016-09-06 2016-12-14 中山瑞科新能源有限公司 A high-efficiency sheet feeding and air extraction device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106222626A (en) * 2016-09-06 2016-12-14 中山瑞科新能源有限公司 A high-efficiency sheet feeding and air extraction device

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