JPH03225940A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH03225940A
JPH03225940A JP2020592A JP2059290A JPH03225940A JP H03225940 A JPH03225940 A JP H03225940A JP 2020592 A JP2020592 A JP 2020592A JP 2059290 A JP2059290 A JP 2059290A JP H03225940 A JPH03225940 A JP H03225940A
Authority
JP
Japan
Prior art keywords
substrate
vacuum chuck
chuck
flatness
protrusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2020592A
Other languages
Japanese (ja)
Inventor
Eiichi Kawamura
栄一 河村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2020592A priority Critical patent/JPH03225940A/en
Publication of JPH03225940A publication Critical patent/JPH03225940A/en
Pending legal-status Critical Current

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PURPOSE:To sense a malfunction on the surface of a substrate before a pattern is transferred and to cope with it by sucking the substrate to a vacuum chuck having an uneven part on its surface, measuring the flatness of the entire surface of the substrate, once removing the substrate from the chuck if a nonflat part is sensed, and resucking it after its position is deviated. CONSTITUTION:A substrate 1 is sucked on a vacuum chuck 3 by predetermined conveying means, and secured to a predetermined position on the chuck 3. If a foreign matter 4 exists between the rear surface of the substrate 1 and the protrusion of the chuck 3, a protrusion responsive to the size of the matter 4 is formed on the substrate 1. Accordingly, a chip region different in height from other chip region is formed on the substrate 1. If a protrusion is detected on the substrate 1, a defocusing is eliminated when a pattern is thereafter transferred. The matter 4 for causing the protrusion to be formed on the substrate 1 is contained in the recess of the chuck 3, and the flatness of the substrate 1 is recovered.

Description

【発明の詳細な説明】 〔概要〕 基板を積載し、また固定する真空チャックへの基板の吸
着方法に、関し、 パターン転写前に基板表面の異常を検知し、対処するこ
とのできる半導体装置の製造方法を提供することを目的
とし、 吸着面に凹凸を有する真空チャック上の所定位置に、基
板を吸着する工程と、該基板表面の平坦度を測定する工
程とを有し、前記測定の結果、非平坦部が存在した前記
基板を前記真空チャックより取り外し、該基板を該真空
チャック上の前記所定位置とは異なる位置に再吸着する
ように製造する。
[Detailed Description of the Invention] [Summary] This invention relates to a method of adsorbing a substrate to a vacuum chuck that loads and fixes the substrate, and provides a semiconductor device that can detect and deal with abnormalities on the surface of the substrate before pattern transfer. The purpose of the present invention is to provide a manufacturing method, which includes the steps of suctioning a substrate to a predetermined position on a vacuum chuck having an uneven suction surface, and measuring the flatness of the substrate surface, and measuring the flatness of the substrate surface. , the substrate having the non-flat portion is removed from the vacuum chuck, and the substrate is re-adsorbed at a position different from the predetermined position on the vacuum chuck.

〔産業上の利用分野〕[Industrial application field]

本発明は、基板を積載し、また固定する真空チャックへ
の基板の吸着方法に関する。
The present invention relates to a method for adhering a substrate to a vacuum chuck for loading and fixing the substrate.

近年の半導体装置の微細化に伴い、各種露光工程時にも
精密なパターン転写が求められている。
With the miniaturization of semiconductor devices in recent years, precise pattern transfer is required during various exposure processes.

そのためには露光時に基板を高精度で水平に固定し、且
つその表面を平坦化しておく必要がある。
For this purpose, it is necessary to horizontally fix the substrate with high precision during exposure, and to flatten the surface.

〔従来の技術〕[Conventional technology]

基板に対する従来のパターン転写の方法は、およそ以下
の通りであった。
The conventional method of pattern transfer to a substrate is approximately as follows.

(1)基板を所定の搬送手段にて真空チャック上に吸着
し、該真空チャック上の所定の位置に固定する。
(1) A substrate is sucked onto a vacuum chuck by a predetermined transport means and fixed at a predetermined position on the vacuum chuck.

(2)基板上へのパターン転写はチップ単位にて行われ
るため、アライメントスコープという位置合わせ用の顕
微鏡を用い、まず第一のチップ領域の正確な位置合わせ
を行う。
(2) Since pattern transfer onto the substrate is performed on a chip-by-chip basis, a positioning microscope called an alignment scope is used to accurately position the first chip area.

(3)  フォーカスセンサを用い、前記第一のチップ
領域の高さ合わせを行う。
(3) Adjust the height of the first chip area using a focus sensor.

ここで第3図はフォーカスセンサの原理を示す説明図で
あり、lOは位置センサ、14は光源、11.12はミ
ラー、13.13aは基板表面を示すものである。
FIG. 3 is an explanatory diagram showing the principle of the focus sensor, in which IO is a position sensor, 14 is a light source, 11.12 is a mirror, and 13.13a is a substrate surface.

フォーカスセンサは、光源14からの光を所定の角度に
て基板表面に入射させ、その反射光の位置を位置センサ
10にて計測するものである。同図に示す如く、異なる
高さを有する基板表面13.13aに対して光源からの
光が照射された場合、該基板表面13.13aの高さに
応じて位置センサ10への反射光の入射位置も異なって
くるため、これを基にして基板表面の高さを測定するこ
とができるのである。
The focus sensor makes light from a light source 14 enter the substrate surface at a predetermined angle, and the position sensor 10 measures the position of the reflected light. As shown in the figure, when light from a light source is irradiated onto a substrate surface 13.13a having different heights, reflected light is incident on the position sensor 10 depending on the height of the substrate surface 13.13a. Since the positions also differ, it is possible to measure the height of the substrate surface based on this.

(4)第一のチップ領域において、所定のパターン転写
を行う。
(4) Perform predetermined pattern transfer in the first chip area.

この後その他のチップ領域においても、上述と同様の工
程を行う。
After this, the same steps as described above are performed in other chip regions as well.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかしながら従来の方法では、基板と真空チャックとの
間に異物等が存在した場合、基板表面に凸部が発生し、
基板が平坦性を失ってしまうという問題があった。この
状態にてパターン転写を行うと、基板表面に凸部の斜面
が存在することから、部分的にデイフォーカス(ピント
ずれ)が発生してしまったのである。
However, in the conventional method, if there is a foreign object between the substrate and the vacuum chuck, a convex portion will occur on the substrate surface.
There was a problem that the substrate lost its flatness. When pattern transfer was performed in this state, day focus (out of focus) occurred partially due to the presence of slopes of convex portions on the substrate surface.

このためパターン転写後にデイフォーカスに気付いた場
合、基板に転写したパターン、レジスト等を全て除去し
、異物を取り除いた上で再度パターン転写を行わなけれ
ばならなかった。これは製造工程上多大な手間を招いた
のである。
Therefore, if day focus is noticed after pattern transfer, it is necessary to remove all the pattern, resist, etc. transferred to the substrate, remove foreign matter, and then perform pattern transfer again. This caused a great deal of effort in the manufacturing process.

本発明はパターン転写前に基板表面の異常を検知し、対
処することのできる半導体装置の製造方法を提供するこ
とを目的とする。
SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a semiconductor device that can detect abnormalities on the surface of a substrate before pattern transfer, and can deal with the abnormalities.

〔課題を解決するための手段〕[Means to solve the problem]

本発明は上記課題を解決するために、吸着面に凹凸を有
する真空チャック上の所定位置に、基板を吸着する工程
と、該基板表面の平坦度を測定する工程とを有し、前記
測定の結果、非平坦部が存在した前記基板を前記真空チ
ャックより取り外し、該基板を該真空チャック上の前記
所定位置とは異なる位置に再吸着するように製造する。
In order to solve the above problems, the present invention includes the steps of suctioning a substrate to a predetermined position on a vacuum chuck having an uneven suction surface, and a step of measuring the flatness of the substrate surface. As a result, the substrate having the non-flat portion is removed from the vacuum chuck, and the substrate is re-adsorbed at a position different from the predetermined position on the vacuum chuck.

〔作用〕[Effect]

本発明では、表面に凹凸を有する真空チャックに基板を
吸着した後、基板表面全体の平坦度を測定している。そ
して非平坦部を検知した場合は、−旦基板を真空チャッ
クより取り外し、位置をずらした後に再吸着している。
In the present invention, after a substrate is attracted to a vacuum chuck having an uneven surface, the flatness of the entire substrate surface is measured. If a non-flat portion is detected, the substrate is first removed from the vacuum chuck, the position is shifted, and then the substrate is re-adsorbed.

従って、基板裏面と真空チャックの凸部との間に異物が
存在して基板表面が平坦度を失っていたとしても、本発
明ではそれを検知して異物が真空チャックの凹部に収ま
るように基板を真空チャックに再吸着しているために、
基板表面の平坦性を回復させることができるのである。
Therefore, even if a foreign object exists between the back surface of the substrate and the convex part of the vacuum chuck and the surface of the substrate loses its flatness, the present invention detects this and adjusts the substrate so that the foreign object fits into the concave part of the vacuum chuck. Because it is re-adsorbed to the vacuum chuck,
The flatness of the substrate surface can be restored.

そしてこの後に該基板上にパターン転写を行うため、本
発明において基板に対するパターン転写は常時正確に行
うことが可能となる。
Since the pattern is then transferred onto the substrate, the pattern can be accurately transferred onto the substrate at all times in the present invention.

〔実施例〕〔Example〕

第1図は本発明の実施例を工程順に示す説明図であり、
1は基板、2はステージ、3は表面に凹凸を有し、例え
ばその凸部より真空吸着を行う真空チャックである。こ
の真空チャック3は、凸部の間隔が例えば3Inffl
、凸部の幅は例えば1m程度である。4は異物、5は真
空吸着機能を具備したハンドラであり、基板lを真空チ
ャック3より持ち上げるためのものである。
FIG. 1 is an explanatory diagram showing an example of the present invention in the order of steps,
Reference numeral 1 denotes a substrate, 2 a stage, and 3 a vacuum chuck having an uneven surface, for example, which performs vacuum suction from the protrusions. In this vacuum chuck 3, the interval between the protrusions is, for example, 3Inffl.
The width of the convex portion is, for example, about 1 m. 4 is a foreign object; 5 is a handler equipped with a vacuum suction function for lifting the substrate l from the vacuum chuck 3;

第1図(a)参照 基板1を所定の搬送手段にて真空チャック3上6 に吸着し、該真空チャック3上の所定の位置に固定する
In FIG. 1(a), the reference substrate 1 is sucked onto the vacuum chuck 3 by a predetermined conveying means and fixed at a predetermined position on the vacuum chuck 3.

例えばフォーカスセンサを適用し、基板1表面の高さを
チップ単位で全て測定する。
For example, a focus sensor is applied to measure the entire height of the surface of the substrate 1 on a chip-by-chip basis.

ここで第2図は本発明における基板平坦度測定例を示す
説明図であり、(a)は通常時、(b)は異常時である
Here, FIG. 2 is an explanatory diagram showing an example of substrate flatness measurement according to the present invention, in which (a) shows a normal state and (b) shows an abnormal state.

基板1裏面と真空チャック3の凸部との間に異物4が存
在しない場合は、該基板1表面は高度な平坦性を有する
ため、同図(a)の如く基板1表面の高さはチップ単位
でどこもほぼ均一となる。
If there is no foreign material 4 between the back surface of the substrate 1 and the convex portion of the vacuum chuck 3, the surface of the substrate 1 has a high level of flatness, so that the height of the surface of the substrate 1 is equal to that of the chip as shown in FIG. The units are almost uniform everywhere.

しかしながら基板1裏面と真空チャック3の凸部との間
に異物4が存在した場合、基板1表面には該異物4の大
きさに応じた凸部が形成されるため、同図(b)の如く
基板1表面には他のチップ領域とは高さの異なるチップ
領域が形成される。
However, if a foreign object 4 exists between the back surface of the substrate 1 and the convex part of the vacuum chuck 3, a convex part corresponding to the size of the foreign object 4 is formed on the surface of the substrate 1, so that Thus, a chip region having a different height from other chip regions is formed on the surface of the substrate 1.

この際に、測定したチップ領域の高さが他の領域に比べ
て異常であるかどうかを判断する手段として、例えば次
のような手段を適用する。
At this time, the following means, for example, is applied as means for determining whether the measured height of the chip region is abnormal compared to other regions.

まずフォーカスセンサによって基板表面のチップ領域の
高さを測定する際に、各チップ領域の測定値を一旦全て
記憶する。
First, when measuring the height of a chip area on the substrate surface using a focus sensor, all measured values of each chip area are once stored.

次いで各チップ領域において得られた測定値を、該チッ
プ領域に隣接する複数のチップ領域において得られた測
定値の平均値と比較する。
The measured value obtained in each chip region is then compared with the average value of the measured values obtained in a plurality of chip regions adjacent to the chip region.

例えば第2図(b)において高さを判断しようとするチ
ップ領域の高さをX、隣接する複数のチップ領域の高さ
をそれぞれa、b、c、dとすれば、x −(a + 
b 十c + d ) / 4 lを算出する。
For example, in FIG. 2(b), if the height of the chip area whose height is to be determined is X, and the heights of a plurality of adjacent chip areas are a, b, c, and d, respectively, x - (a +
Calculate b + c + d) / 4 l.

本実施例において、上述の算出値が異常かどうかを判断
する目安は例えば2μmである。
In this embodiment, the standard for determining whether the above-mentioned calculated value is abnormal is, for example, 2 μm.

発明者のデータによれば、基板1表面における高さ分布
が±2μm以内であるならば、後に行われるパターン転
写等に影響はでない。
According to the inventor's data, if the height distribution on the surface of the substrate 1 is within ±2 μm, there is no influence on pattern transfer, etc. performed later.

従って算出値が2μm以上であった場合に、異物4によ
る凸部が形成されていると判断するのである。この際本
発明に適用するフォーカスセンサは市販のものであるが
、0.2μm程度の凹凸までは測定可能な性能を有して
いるため、2μm以上の高低差を検知することには何の
問題も無い。
Therefore, if the calculated value is 2 μm or more, it is determined that a convex portion is formed by the foreign object 4. At this time, the focus sensor applied to the present invention is commercially available, but it has the ability to measure irregularities up to about 0.2 μm, so there is no problem in detecting height differences of 2 μm or more. There is no.

以上の工程の結果、基板1表面において凸部が検出され
た場合は、後に行うパターン転写の際にデイフォーカス
が出ないように以下の工程を実施する。
If a convex portion is detected on the surface of the substrate 1 as a result of the above steps, the following steps are performed to prevent day focus from occurring during pattern transfer to be performed later.

第1図(b)参照 ハンドラ5によって基板1の端部を真空吸着し、該基板
lを真空チャック3の上方へ持ち上げる。
Referring to FIG. 1(b), the end of the substrate 1 is vacuum-suctioned by the handler 5, and the substrate 1 is lifted above the vacuum chuck 3.

次いでステージ2を、真空チャック3の凸部の幅程度移
動させる。例えば本実施例における真空チャック3の凸
部は幅が1mm程度であるため、移動距離も1 mm程
度である。
Next, the stage 2 is moved by about the width of the convex portion of the vacuum chuck 3. For example, since the convex portion of the vacuum chuck 3 in this embodiment has a width of about 1 mm, the moving distance is also about 1 mm.

異物4の大きさが1陶を越えることは通常有り得ないた
め(1mmを越えるような大きさを有する異物は、基板
1が真空チャック3に吸着される以前に検知され、除去
されるのである。)、ステージ2を真空チャック3の凸
部程度移動させることにより、基板1裏面に付着した異
物4は真空チャック3の凸部上から四部上へと移動した
ことになるのである。
Since it is normally impossible for the foreign matter 4 to exceed 1 mm in size (foreign matter exceeding 1 mm in size is detected and removed before the substrate 1 is attracted to the vacuum chuck 3). ), by moving the stage 2 by the distance of the convex portion of the vacuum chuck 3, the foreign matter 4 adhering to the back surface of the substrate 1 is moved from above the convex portion of the vacuum chuck 3 to above the fourth portion.

第1図(C)参照 ハンドラ5により持ち上げていた基板1を、再度真空チ
ャック3上に吸着し、固定する。
Referring to FIG. 1(C), the substrate 1 which had been lifted by the handler 5 is again sucked onto the vacuum chuck 3 and fixed.

この結果、基板1表面に凸部を形成する原因となってい
た異物4は真空チャック3の凹部に収まるため、該基板
1の平坦性は回復するのである。
As a result, the foreign matter 4 that caused the formation of convex portions on the surface of the substrate 1 is accommodated in the concave portion of the vacuum chuck 3, so that the flatness of the substrate 1 is restored.

ところで基板1表面の平坦性に係わるような大きさを有
する異物4は〜実際には事前の処理によって、その多く
が露光処理工程以前に除去される。
By the way, most of the foreign particles 4 having a size that affects the flatness of the surface of the substrate 1 are removed by prior processing before the exposure process.

従って異物4が、1枚の基板1裏面に同時に多数存在す
ることは実際にはほとんど無い。
Therefore, it is actually almost impossible for a large number of foreign substances 4 to exist on the back surface of one substrate 1 at the same time.

このため上記工程の実施の結果、特定の異物4によって
基板1表面に形成されていた凸部が平坦化される代わり
に、他の異物4が真空チャック3の凸部上に移動して該
基板1表面に新たな凸部が形成されるという可能性はほ
とんど無い。
Therefore, as a result of carrying out the above process, instead of flattening the convex portion formed on the surface of the substrate 1 by the specific foreign matter 4, other foreign matter 4 moves onto the convex portion of the vacuum chuck 3, and the convex portion formed on the surface of the substrate 1 is flattened. There is almost no possibility that a new convex portion will be formed on one surface.

また上記工程を実施しても基板1裏面の平坦性が回復し
なかった場合は、異物4が基板1裏面ではなく真空チャ
ック3の凸部に付着していることが予想される。従って
この場合は、例えば警告音0 を発して当事者に知らせるといった手段が有効である。
If the flatness of the back surface of the substrate 1 is not restored even after performing the above steps, it is assumed that the foreign matter 4 is attached not to the back surface of the substrate 1 but to the convex portion of the vacuum chuck 3. Therefore, in this case, it is effective to notify the person concerned by emitting a warning sound, for example.

この後公知の方法により、チップ単位で基板1に所定の
パターン転写を行う。
Thereafter, a predetermined pattern is transferred onto the substrate 1 on a chip-by-chip basis by a known method.

他の実施例の説明 上述の実施例で用いた真空チャックは、その凸部より真
空吸着を行ったが、これは凹部より真空吸着を行うもの
であってももちろん構わない。
DESCRIPTION OF OTHER EMBODIMENTS In the vacuum chuck used in the above-described embodiments, vacuum suction was performed from the convex portion of the chuck, but it is of course possible to perform vacuum suction from the concave portion.

上述の実施例では基板を持ち上げるハンドラは1つであ
るが、これは1つである必要はなく、複数用いても良い
Although there is one handler for lifting the substrate in the above embodiment, it is not necessary to use one handler, and a plurality of handlers may be used.

上述の実施例では、基板を持ち上げた後にステージを移
動させているが、これは真空チャックを移動させるため
であり、必ずしもステージを移動させる必要はない。ま
たこの際に真空チャックではなく、基板を移動させても
これは構わない。
In the above-described embodiment, the stage is moved after lifting the substrate, but this is to move the vacuum chuck, and it is not necessarily necessary to move the stage. Further, at this time, the substrate may be moved instead of the vacuum chuck.

また以上の記載においては、本発明を基板の露光処理工
程に対応させて説明してきた。しかしながら本発明は、
例えば基板の研磨工程やエツチング工程等、基板を固定
する必要のある処理工程な■ らば他の処理工程に適用することも可能であり、本発明
の適用対象を限定するものではない。
Furthermore, in the above description, the present invention has been explained in correspondence with a substrate exposure process. However, the present invention
For example, the present invention can be applied to other processing steps such as substrate polishing and etching steps that require fixing of the substrate, and is not intended to limit the scope of the present invention.

以上本発明を実施例により説明したが、本発明は本発明
の趣旨に従い種々の変形が可能であり、本発明からこれ
らを排除するものではない。
Although the present invention has been described above with reference to examples, the present invention can be modified in various ways according to the spirit of the present invention, and these are not excluded from the present invention.

〔発明の効果] 以上説明したように本発明によれば、常時正確なパター
ン転写ができるという効果を奏する。
[Effects of the Invention] As explained above, according to the present invention, there is an effect that accurate pattern transfer is always possible.

従ってパターン転写におけるデイフォーカスが発生せず
、パターン転写をやり直す必要がなくなるために、係わ
る半導体装置の生産性向上に寄与するところが大きい。
Therefore, day focus does not occur during pattern transfer, and there is no need to redo pattern transfer, which greatly contributes to improving the productivity of related semiconductor devices.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の実施例を工程順に示す説明図、第2図
は本発明はおける基板平坦度測定例を示す説明図、 第3図はフォーカスセンサの原理を示す説明図である。 ■ 図中、 1゜ 2゜ 3゜ 4゜ 5゜ 10゜ 11゜ 13゜ 1.基板1 0.ステージ1 9.真空チャック1 0.異物1 3.ハンドラ1 70位置センサ、 12、、、  ミラー、 13a、、基板表面。 3 10位冒甘せサ \130基板表面 フォ ーカスセンサの 第 2 片理【飲す説明図 〉 図
FIG. 1 is an explanatory diagram showing an example of the present invention in the order of steps, FIG. 2 is an explanatory diagram showing an example of substrate flatness measurement according to the present invention, and FIG. 3 is an explanatory diagram showing the principle of a focus sensor. ■ In the figure, 1゜2゜3゜4゜5゜10゜11゜13゜1. Substrate 1 0. Stage 1 9. Vacuum chuck 1 0. Foreign object 1 3. Handler 1 70 position sensor, 12, mirror, 13a, substrate surface. 3 10th place Sasa \ 130 Second unilateral part of the substrate surface focus sensor [Explanatory diagram] Diagram

Claims (1)

【特許請求の範囲】 吸着面に凹凸を有する真空チャック(3)上の所定位置
に、基板(1)を吸着する工程と、該基板(1)表面の
平坦度を測定する工程とを有し、 前記測定の結果、非平坦部が存在した前記基板(1)を
前記真空チャック(3)より取り外し、該基板(1)を
該真空チャック(3)上の前記所定位置とは異なる位置
に再吸着することを特徴とする半導体装置の製造方法。
[Claims] The method includes the steps of suctioning a substrate (1) to a predetermined position on a vacuum chuck (3) having an uneven suction surface, and measuring the flatness of the surface of the substrate (1). As a result of the measurement, the substrate (1) in which a non-flat portion was present is removed from the vacuum chuck (3), and the substrate (1) is returned to a position different from the predetermined position on the vacuum chuck (3). A method for manufacturing a semiconductor device characterized by adsorption.
JP2020592A 1990-01-31 1990-01-31 Manufacture of semiconductor device Pending JPH03225940A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2020592A JPH03225940A (en) 1990-01-31 1990-01-31 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020592A JPH03225940A (en) 1990-01-31 1990-01-31 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPH03225940A true JPH03225940A (en) 1991-10-04

Family

ID=12031522

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020592A Pending JPH03225940A (en) 1990-01-31 1990-01-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPH03225940A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018163954A (en) * 2017-03-24 2018-10-18 キヤノン株式会社 Lithographic apparatus and article manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018163954A (en) * 2017-03-24 2018-10-18 キヤノン株式会社 Lithographic apparatus and article manufacturing method

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