JPH03226572A - Sputtering device - Google Patents

Abstract

PURPOSE:To form a film on the bottom of a recess on a substrate, etc., in uniform thickness by providing a funneled shielding plate, etc., between a target and a substrate holder and using the metal atom flown out perpendicularly to a substrate to form a thin film. CONSTITUTION:The sputtering device is formed with the target 1, the holder 5 for a substrate 2 to be treated, a stage 4 and a shielding plate 3. The stage 4 is used to hold the holder 5, and the substrate 2 is moved in parallel with the target 1. The shielding plate 3 is funneled, set between the target 1 and the holder 5 and furnished with an opening 6 at its center.

Description

DETAILED DESCRIPTION OF THE INVENTION 3. Industrial Application Fields The present invention relates to a sputtering apparatus used in a thin film forming process.

[Conventional technology]

Conventionally, this type of sputtering equipment places the substrate to be processed on a holding plate placed to face a sputtering target attached to a vacuum chamber, and introduces and discharges argon gas to generate argon ions. It was configured to collide with a target and deposit metal atoms from the target surface onto the substrate to be processed, thereby creating a thin film.

[Problem to be solved by the invention]

In the conventional sputtering apparatus described above, argon ions collide with the target surface in multiple directions, and metal atoms fly out in multiple directions and are deposited on the substrate to be processed. The problem was that it was difficult to control.

Further, the surface of the substrate to be processed has small irregularities (about 1 μm in width and 1 μm in depth), and there is a problem in that it is impossible to apply a film of uniform thickness to the bottom and side surfaces of the recesses.

[Means to solve the problem]

The sputtering apparatus of the present invention includes a target, a holding plate provided opposite to the target and holding a substrate to be processed, and a stage for holding the holding plate and moving the substrate to be processed parallel to the target. , a funnel-shaped shielding plate provided between the target and the holding plate and having an opening in the center.

〔Example〕

Next, the present invention will be explained with reference to the drawings.

FIG. 1 is a block diagram of the vicinity of a target in a first embodiment of the present invention.

A holding plate 5 that holds the target 1 and the substrate to be processed 2 are arranged in parallel. This holding plate 5 is mounted on the stage 4 and is movable parallel to the target. In particular, a funnel-shaped shielding plate 3 having an opening 6 in the center is provided between the target 1 and the holding plate 2. The operation will be explained below.

First, argon ions collide with the surface of the target 1 from multiple directions, and metal atoms fly out from the surface of the target 1 in multiple directions.However, there is a funnel-shaped shielding plate 3 between the target 1 and the substrate 2 to be processed. Therefore, the metal atoms that jumped out in the diagonal direction adhere to the shielding plate, and only the metal atoms that jumped out in the direction perpendicular to the substrate 2 to be processed pass through the opening 6 and are deposited on the substrate 2 to be processed. During this sputtering, the substrate 2 to be processed is moved by the stage 4 in a plane parallel to the target 1, so that a thin film can be uniformly formed over the entire surface of the substrate 2 to be processed.

FIG. 2 is a block diagram of the vicinity of a target in a second embodiment of the present invention.

A funnel-shaped shielding plate 3A is located near the substrate 3 to be processed in the opposite direction from the first embodiment, and the thickness of the plate is thicker at the center.

In the second embodiment configured in this manner, the metal atoms flying out from the target 1 in indiscriminate directions pass through the central opening 6 of the shielding plate 3A, and metal atoms only in the vertical direction of the substrate 2 to be processed are exposed. It is deposited on the processing substrate 2.

In this embodiment, since the outer surface of the shielding plate 3A faces the outside of the target 1, it adheres to the outer surface of the shielding plate 3A,
This method has the advantage that the flaked metal does not re-adhere to the target surface, making it possible to form a thin film with less foreign matter.

〔Effect of the invention〕

As explained above, the present invention provides a funnel-shaped shielding plate between the target and the holding plate that holds the substrate to be processed, and a stage that moves the substrate to be processed in a plane parallel to the target. Since a thin film can be formed using metal atoms ejected in a vertical direction, it is possible to form a film with a uniform thickness on the bottom and side surfaces of a recess on a substrate to be processed.

Furthermore, by moving the substrate to be processed using the stage, there is also the effect that a uniform film thickness distribution can be obtained over the entire substrate to be processed.

[Brief explanation of drawings]

FIGS. 1 and 2 are configuration diagrams of the vicinity of targets in first and second embodiments of the present invention. 1...Target, 2...Substrate to be processed, 3.3A・
... Shielding plate, 4... Stage, 5... Holding plate, 6
···Aperture.

Claims (1)

[Claims] A target, a holding plate provided opposite to the target and holding the substrate to be processed, a stage for holding the holding plate and moving the substrate to be processed parallel to the target, the target and the holding plate. and a funnel-shaped shielding plate having an opening in the center.