JPH0322768A - Driving method for solid-state image pickup element - Google Patents
Driving method for solid-state image pickup elementInfo
- Publication number
- JPH0322768A JPH0322768A JP1157369A JP15736989A JPH0322768A JP H0322768 A JPH0322768 A JP H0322768A JP 1157369 A JP1157369 A JP 1157369A JP 15736989 A JP15736989 A JP 15736989A JP H0322768 A JPH0322768 A JP H0322768A
- Authority
- JP
- Japan
- Prior art keywords
- overflow drain
- photocharges
- driving
- channel region
- discharged
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract 6
- 230000004888 barrier function Effects 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 claims 1
- 238000003384 imaging method Methods 0.000 claims 1
- 238000005036 potential barrier Methods 0.000 claims 1
- 108091006146 Channels Proteins 0.000 abstract 3
- 238000007599 discharging Methods 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
Landscapes
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
《イ》産業上の利用分野
本発明は、チャネル領域中の光電荷をチャネル領域外に
排出させ−る固体撮像素子の駆動方法に関する.
〈口〉従来の技術
従来、CCD固体撮像素子を用いたテレビカメラの如き
撮像装置に於いては、CCDの動作原理を活用して電子
的に露光制御を行うことが考えられている.このような
露光制御方法は、例えば特開昭63−24764号公報
に開示されている如く、垂直走査期間毎の光電変換期間
の途中でそれまで撮像部に蓄積した光電荷を転送排出し
、残余の光電変換期間に光電変換して得た光電荷を蓄積
するように構成されている.即ち、光電荷の排出のタイ
ミングの変更に依って光電変換期間が伸縮されるもので
、光電荷の排出のタイミングがCCDの出力信号のレベ
ルに従って設定される.このようなCCDの駆動方法で
は、撮像部の不要な光電荷を読出転送方向とは反対の方
向に転送することで排出しているが、逆方向への転送に
依る光電荷の排出は、読出転送時と同様に排出転送時に
もスミアが発生する.そこで、スミアの発生しない光電
荷の排出方法が種々考えられている.例えば、本願出願
人既提案の特願平1−96712号に於いては、撮像部
の蓄積転送チケネルに並列して設けられるオーバーフロ
ードレインの電位を高くすることで、蓄積転送チケネル
と才−バーフロードレインとの間の電位障壁を消滅させ
て蓄積転送チャネルから才一バーフロードレインに光電
荷を排出させている.
第3図は、上述の駆動方法を採用するCCD固体撮像素
子の要部平面図であり、第4図は第3図x−x’線断面
図である.ここでは、クロスゲート構造のフレームトラ
ンスファ型CCDの撮像部が示してある.
P型基板(1)の一面には、複数のチャネルストップ〈
2〉がLOGOSに依って互いに平行に配列形成されて
おり、このチャネルストップ〈2〉の下にオーバーフロ
ードレイン〈3)が形成されている.各チャネルストッ
プ《2〉の間にはN型のチャネル領域(4)が拡散に依
って形成され、このチャネル領域《4〉上にチャネルス
トップ(2〉と直交する方向に複数の下層電極(5)が
平行に設けられ、さらにチャネルストップ〈2〉に沿っ
て複数の上層電極(6)が設けられている.上層電極(
6〉には、下層電極《5〉の間隙を覆う突出部が隣り合
う上層電極(6〉と互い違いになるように形成されてい
る.?電極(5)(6)は4相の転送クロックφ■〜φ
■でパルス駆動されるもので、上層電極〈6〉には転送
クロックφ■,φ,.、下層電極(5〉には転送クロッ
クφ,.φ■が交互に印加される.そして、オーバーフ
ロードレイン(3〉には、電位制御クロックφ。,,が
印加される.チャネル領域(4)に光電荷を蓄積する際
には、例えば転送クロックφ■を高レベル、制御クロッ
クφ。,Dを低レベルとすることで基板(1)内のボテ
ンシ勺ルを第5図に示すようにチャネル領域(4)とオ
ーバーフロードレイン(3〉との間で浅くさせ、ボテン
シヶル障壁を形成する.従って、受光領域(7〉で発生
する光電荷は、ポテンシャルの勾配に沿って上層電極(
6)の突出部の下に流れてチャネル領域(4〉に蓄積さ
れる.
一方、チャネル領域《4〉内の光電荷を排出する際には
、蓄積の際とは逆に転送クロックφ■を低レベル、制御
クロックφ。,。を高レベルとすることで、第3図に破
線で示すようにチャネル領域(4)のポテンシャルを浅
くしてチャネル領域〈4〉とオーバーフロードレイン(
3〉との間のポテンシャル障壁を消滅させる.ポテンシ
ャル障壁がなくなると、チャネル領域(4〉内の光電荷
はポテンシャル勾配に沿って才一バーフロードレイン(
3)へ流れる.従って、チャネル領域〈4)内の光電荷
が排出されることになる.
このような光電荷の排出方法に依ると、撮像部全体の光
電荷を略同時に、しかも極めて短い期間に排出すること
ができるため、逆転送に依る光電荷の排出方法に比して
スミアが大幅に抑圧される.
(八)発明が解決しようとする課題
しかしながら、光電荷をチケネル領域(4)からオーバ
ーフロードレイン(3〉に流す場合、チケネル領域(0
内に不要な光電荷が残留することがある.これは、チケ
ネル領域(4)やオーバーフロードレイン(3)等の不
純物濃度、チャネルストップ(2)部分のLOGOSの
厚さ等の製造時のばらつきに依り、チャネル領域(4)
とオーバーフロードレイン《3〉との間のポテンシャル
障壁が消滅し易い領域と、消滅し難い領域とが生ずるた
めであり、各領域を均一な電位とした場合、ポテンシ勺
ル障壁の消滅し難い領域に光電荷が残留する.このよう
な光電荷の残留を防止するためには、全ての領域でチャ
ネル領域(4)とオーバーフロードレイン(3〉との間
のボテンシケル障壁が十分に消滅するような極めて高い
電位差をチケネル領域(4〉とオーバーフロードレイン
〈3〉との間に与える必要がある.従って、CCDを駆
動する駆動パルスの電圧が高くなるという問題が生ずる
.そこで本発明は、チャネル領域(4〉内の光電荷を排
出する際の駆動パルスの電圧を下げると共に、チケネル
領域(4)内に光電荷が残留するのを防止することを目
的とする.
(二〉課題を解決するための手段
本発明は上述の課題を解決するためになされたもので、
複数のチャネル領域がチャネルストップ領域で互いに分
離されて配列形成され、上記チャネルストップ領域内に
設けられたオーバーフロードレインに上記チャネル領域
中の過剰な光電荷を受けるCCD固体撮像素子の駆動方
法に於いて、上記チャネル領域と上記オーバーフロード
レインとの間に電位障壁を形戒しうる上記オーバーフロ
ードレインの電位に対し、上記オーバーフロードレイン
を高電位として上記電位障壁を消滅させると共に、上記
チャネル領域上に設けられた転送電極をパルス駆動する
ことで、上記チャネル領域中の光電荷を上記チケネル領
域から上記オーバーブロードレインに排出せしめること
を特徴とする.
(ホ)作用
本発明に依れば、撮像部の光電荷が読出方向とは反対の
方向に転送される過程に於いてチャネル領域からオーバ
ーフロードレインに排出されるために、チャネル領域と
オーバーフロードレインとの間の電位障壁の消滅し難い
領域に残留した光電荷は転送経路中の電位障壁が消滅し
易い領域でオーバーフロードレインに排出される。DETAILED DESCRIPTION OF THE INVENTION <<A>> Industrial Application Field The present invention relates to a method for driving a solid-state image pickup device for discharging photocharges in a channel region to the outside of the channel region. <Background> Conventional technology Conventionally, in imaging devices such as television cameras that use CCD solid-state imaging devices, it has been considered to electronically control exposure by utilizing the operating principle of CCD. Such an exposure control method, as disclosed in, for example, Japanese Patent Application Laid-open No. 63-24764, transfers and discharges the photocharges accumulated in the imaging section in the middle of the photoelectric conversion period of each vertical scanning period, and removes the remaining photoelectric charges. It is configured to accumulate the photocharge obtained by photoelectric conversion during the photoelectric conversion period. That is, the photoelectric conversion period is expanded or contracted by changing the timing of photocharge discharge, and the timing of photocharge discharge is set according to the level of the output signal of the CCD. In this CCD driving method, unnecessary photocharges in the imaging section are discharged by transferring them in the opposite direction to the readout transfer direction. Smear occurs during ejection and transfer as well as during transfer. Therefore, various methods of discharging photocharges that do not cause smearing have been considered. For example, in Japanese Patent Application No. 1-96712 previously proposed by the present applicant, by increasing the potential of the overflow drain provided in parallel with the storage and transfer channel of the imaging section, By eliminating the potential barrier between the capacitor and the drain, the photocharge is discharged from the storage transfer channel to the barflow drain. FIG. 3 is a plan view of a main part of a CCD solid-state image pickup device employing the above-described driving method, and FIG. 4 is a cross-sectional view taken along line xx' in FIG. 3. Here, an imaging section of a frame transfer type CCD with a cross-gate structure is shown. A plurality of channel stops are provided on one side of the P-type substrate (1).
2> are arranged in parallel to each other by LOGOS, and an overflow drain <3) is formed below this channel stop <2>. An N-type channel region (4) is formed between each channel stop (2) by diffusion, and a plurality of lower electrodes (5) are formed on this channel region (4) in a direction orthogonal to the channel stop (2). ) are provided in parallel, and a plurality of upper layer electrodes (6) are further provided along the channel stop <2>.
6>, the protruding parts covering the gap between the lower layer electrodes <5> are formed so as to alternate with the adjacent upper layer electrodes (6>). ■〜φ
The upper layer electrode <6> is pulse-driven with the transfer clocks φ■, φ, . , transfer clocks φ, .φ■ are applied alternately to the lower layer electrode (5>), and potential control clocks φ, ., are applied to the overflow drain (3>). When accumulating photocharges, for example, by setting the transfer clock φ■ at a high level and the control clocks φ. (4) and the overflow drain (3>) to form a potential barrier. Therefore, the photocharge generated in the light receiving region (7>) flows along the potential gradient to the upper layer electrode (3).
6) and is accumulated in the channel region (4). On the other hand, when discharging the photocharges in the channel region (4), the transfer clock φ■ is activated, contrary to the case of accumulation. By setting the low level and the control clock φ, to high level, the potential of the channel region (4) is made shallow as shown by the broken line in FIG. 3, and the potential of the channel region (4) and the overflow drain (
3) Eliminates the potential barrier between When the potential barrier disappears, the photocharge in the channel region (4〉) flows along the potential gradient into the barflow drain (
Flows to 3). Therefore, the photocharges in the channel region <4) are discharged. According to this method of discharging photocharges, the photocharges of the entire imaging section can be discharged almost simultaneously and in an extremely short period of time, so smearing is significantly reduced compared to a method of discharging photocharges that uses reverse transfer. suppressed by (8) Problems to be Solved by the Invention However, when photocharges flow from the channel region (4) to the overflow drain (3), the channel region (0
Unnecessary photocharges may remain inside the device. This is due to manufacturing variations in the impurity concentration of the channel region (4), overflow drain (3), etc., and the thickness of the LOGOS in the channel stop (2) portion.
This is because there are areas where the potential barrier between the Photocharge remains. In order to prevent such photocharges from remaining, an extremely high potential difference is applied to the channel region (4) so that the Botenskel barrier between the channel region (4) and the overflow drain (3) is sufficiently eliminated in all regions. ) and the overflow drain <3>.Therefore, a problem arises in that the voltage of the driving pulse for driving the CCD becomes high.Therefore, the present invention aims to drain the photocharges in the channel region (4>). The purpose of the present invention is to reduce the voltage of the drive pulse when the drive pulse is applied and to prevent photocharges from remaining in the ticket channel region (4). It was done to solve
In a method for driving a CCD solid-state imaging device, a plurality of channel regions are arranged and separated from each other by a channel stop region, and an overflow drain provided in the channel stop region receives excess photocharge in the channel region. , with respect to the potential of the overflow drain that can form a potential barrier between the channel region and the overflow drain, the overflow drain is set at a high potential to eliminate the potential barrier, and the The present invention is characterized in that by pulse-driving the transfer electrode, photocharges in the channel region are discharged from the channel region to the overbroad drain. (E) Effect According to the present invention, since photocharges in the imaging section are discharged from the channel region to the overflow drain in the process of being transferred in the opposite direction to the readout direction, the channel region and the overflow drain are connected. The photocharges remaining in the region where the potential barrier is difficult to disappear between the transfer paths are discharged to the overflow drain in the region in the transfer path where the potential barrier is easy to disappear.
《へ〉実施例
本発明の一実施例を図面に従って説明する.第1図は本
発明駆動方法を用いて自動露光制御を行う撮像装置のブ
ロック図である.
CCD固体撮像素子(10〉は、撮像部に照射された映
像を光電変換し、得られた光電荷が一定期間毎に読出駆
動されて画面単位で連続する映像信号X (t)を出力
する.この映像信号X (t)は信号処理回路(11〉
でサンプルホールド、ガンマ補正等の処理が施され、ピ
デ才信号Y (t)として外部機器に出力される.
C O D (10)は、各種クロックでパルス駆動さ
れるもので、読出クロック発生回路(12〉から順方向
転送クロックφ,、排出クロック発生回路(13)から
逆方向転送クロックφ.が撮像部の転送電極に供給され
る.さらに、C C D (10)のオーバーフロード
レインには、制御クロック発生回路〈14〉から電位制
御クロックφ。,Dが供給される.これらクロック発生
回路(12)(13)及び〈14〉には、読出タイミン
グ設定回路(15)及び排出タイミング設定回路(16
〉から、夫々読出タイミング信号FT及び排出タイミン
グ信号RTが供給され、この読出タイミング信号FT及
び排出タイミング信号RTに従って動作する.即ち、C
CD(10)に蓄積された光電荷は、一定期間毎に順方
向転送クロックφ,に依って読出駆動され、排出タイミ
ング信号RTで設定されるタイミングに逆方向転送クロ
ックφ.で読出駆動の方向とは反対の方向に転送される
と共に電位制御クロックφ。,,でオーバーフロードレ
インに排出せしめられる.
一力、露光量判定回路(17)は、C C D (10
)から得られる映像信号X (t)の露光量を検知し、
その露光量が適正範囲以上であれば露光抑制信号CLO
SE,適正範囲以下であれば露光促進信号OPENを排
出タイミング設定回路(16〉に与える.そして、排出
タイミング設定回路(16)は、露光抑制信号CLOS
E及び露光促進信号OPENに従って露光期間を伸縮制
御する.
第2図は第1図の動作を示すタイミング図である.
読出タイミング信号FTは、垂直走査信号VDのプラン
キング期間の所定のタイミングにタイミングパルス(a
)を有しており、このタイミングパルス(a)の入力で
読出クロック発生回路(12〉は一画面分の光電荷を垂
直方向に転送するクロックパルス(b)を発生する.排
出タイミング信号RTは、垂直走査期間の特定のタイミ
ングにタイミングパルス(e)を有しており、このタイ
ミングにそれまで蓄積した光電荷が排出される.このタ
イミングパルス(C)の発生するタイミングは、露光量
判定回路(17〉からの露光抑制信号CLOSEで遅ら
せられ、露光促進信号OPENで速められるように構成
されている.タイミングパルス(e)が排出クロック発
生回路《13)及び制御クロック発生回路(14〉に入
力されると、水平走査信号HDのプランキング期間に電
位制御クロックφ。FDが立上り、一定期間(ここでは
水平走査信号HDの2周期)の後同じくプランキング期
間に立下ると共に、電位制御クロックφ。,Dが立上っ
てから立下るまでの期間の水平走査信号HDのプランキ
ング期間に逆方向転送クロックφ,がクロックパルス(
d)を発生する.光電荷の排出期間中は、電位制御クロ
ックφ。。に依って才一バーフロードレインの電位が高
められてボテンシ勺ルが深く形成され、チケネル領域と
オーバーフロードレインとの間のボテンシケル障壁が消
滅された状態で、チケネル領域の光電荷が逆方向に転送
される.従って、ポテンシャル障壁が完全に消滅せずに
光電荷が残留するような領域があった場合、その残留電
荷が一定の区間を転送される間にポテンシケル障壁の消
滅した領域に入れば才一バーブロード,レインに排出さ
れる.この排出期間が終わってから、次に順方向転送ク
ロックφ,がクロックパルス(b)を発生するまでの期
間が露光期間Eとして設定され、この期間Eで一画面分
の光電荷が蓄積される.
上述の如き駆動方法に依れば、逆方向転送クロックφ.
で転送される一定の区間内の一部でチャネル領域からオ
ーバーフロードレインに光電荷が排出されれば良いこと
から、c C D (tO)の製造ばらつきに依って部
分的に光電荷の排出され難い領域があったとしても、こ
の領域に応じて電位制御く、駆動電圧を低下させること
が可能である.尚、本実施例に於いては、光電荷の排出
タイミングをC O D (1G)の露光量に対応させ
た(自動露制御)場合を例示しているが、本発明駆動方
法を用いて可変速電子シャッタを実現することもできる
.この場合には、排出タイミングを手動で設定すること
に依り、所定のシャッタ速度の静止画を得ることができ
る.
(ト〉発明の効果
本発明に依れば、チヶネル領域に残留した光電荷を駆動
電圧を上げることなくオーバーフロードレインに排出す
ることができるため、光電荷を効率良く排出させること
ができ、露光期間の伸縮制御を容易に実現できる.
また、駆動電圧を低くすることが可能なため、駆動クロ
ックを発生する回路を容易に構成することができ、コス
トの低下が望める.《《〉《〉Example〉An example of the present invention will be explained according to the drawings. FIG. 1 is a block diagram of an imaging device that performs automatic exposure control using the driving method of the present invention. The CCD solid-state imaging device (10) photoelectrically converts the image irradiated onto the imaging section, and the resulting photocharges are read out and driven at regular intervals to output a continuous video signal X (t) for each screen. This video signal X (t) is processed by the signal processing circuit (11)
Processing such as sample hold and gamma correction is performed on the signal, and the signal is output to an external device as a signal Y(t). C O D (10) is pulse driven by various clocks, and the forward transfer clock φ from the read clock generation circuit (12>) and the reverse transfer clock φ. from the discharge clock generation circuit (13) are sent to the imaging section. Furthermore, the potential control clocks φ., D are supplied from the control clock generation circuit <14> to the overflow drain of CCD (10).These clock generation circuits (12) ( 13) and <14> include a read timing setting circuit (15) and a discharge timing setting circuit (16).
A read timing signal FT and a discharge timing signal RT are respectively supplied from the terminals 1 and 2, and the operation is performed according to the read timing signal FT and the discharge timing signal RT. That is, C
The photocharges accumulated in the CD (10) are read out and driven by the forward transfer clock φ, at regular intervals, and are read out by the reverse transfer clock φ. The potential control clock φ is transferred in the direction opposite to the read drive direction. , , the water is discharged to the overflow drain. First, the exposure amount judgment circuit (17) is C C D (10
) detects the exposure amount of the video signal X (t) obtained from
If the exposure amount is above the appropriate range, the exposure suppression signal CLO
SE, if it is below the appropriate range, the exposure promotion signal OPEN is given to the discharge timing setting circuit (16).The discharge timing setting circuit (16) then outputs the exposure suppression signal CLOS.
Expansion and contraction of the exposure period is controlled according to E and the exposure promotion signal OPEN. Figure 2 is a timing diagram showing the operation of Figure 1. The read timing signal FT generates a timing pulse (a) at a predetermined timing during the blanking period of the vertical scanning signal VD.
), and upon input of this timing pulse (a), the readout clock generation circuit (12) generates a clock pulse (b) for vertically transferring photocharges for one screen.The discharge timing signal RT is , has a timing pulse (e) at a specific timing in the vertical scanning period, and at this timing the photocharges accumulated up to that point are discharged.The timing at which this timing pulse (C) is generated is determined by the exposure amount judgment circuit. The timing pulse (e) is input to the discharge clock generation circuit (13) and the control clock generation circuit (14). Then, during the blanking period of the horizontal scanning signal HD, the potential control clock φ. During the blanking period of the horizontal scanning signal HD from the rise to the fall of .,D, the reverse direction transfer clock φ, is a clock pulse (
d). During the photocharge discharge period, the potential control clock φ. . As a result, the potential of the barflow drain is increased and a deep potency hole is formed, and the photocharge in the channel region is transferred in the opposite direction with the barrier between the channel region and the overflow drain disappearing. It will be done. Therefore, if there is a region where the potential barrier does not completely disappear and a photocharge remains, if the residual charge enters the region where the potential barrier disappears while being transferred over a certain period, it will become a single bar broad. , is discharged into the rain. The period from the end of this discharge period until the next forward transfer clock φ generates a clock pulse (b) is set as an exposure period E, and photo charges for one screen are accumulated in this period E. .. According to the driving method as described above, the reverse transfer clock φ.
Since it is sufficient that the photocharges are discharged from the channel region to the overflow drain in a part of a certain section where they are transferred by Even if there is a region, it is possible to reduce the drive voltage by controlling the potential according to this region. In this embodiment, a case is illustrated in which the photocharge discharge timing is made to correspond to the exposure amount of C O D (1G) (automatic exposure control), but it is also possible to use the driving method of the present invention. It is also possible to realize a variable speed electronic shutter. In this case, a still image at a predetermined shutter speed can be obtained by manually setting the ejection timing. (G) Effects of the Invention According to the present invention, the photocharges remaining in the channel region can be discharged to the overflow drain without increasing the drive voltage, so the photocharges can be efficiently discharged and the exposure period The expansion and contraction control can be easily realized.Also, since the drive voltage can be lowered, the circuit that generates the drive clock can be easily configured, and the cost can be reduced.
第1図は本発明駆動方法を用いた撮像装置のブロック図
、第2図は第1図の動作タイミング図、第3図はCCD
固体撮像素子の要部平面図、第4図は第3図の断面図、
第5図はCCD固体撮像素子内のボテンシ勺ル図である
.Fig. 1 is a block diagram of an imaging device using the driving method of the present invention, Fig. 2 is an operation timing diagram of Fig. 1, and Fig. 3 is a CCD
A plan view of the main parts of the solid-state image sensor, FIG. 4 is a cross-sectional view of FIG. 3,
Figure 5 is a diagram of the potency inside the CCD solid-state image sensor.
Claims (2)
数のチャネル領域がチャネルストップ領域で互いに分離
されて配列形成され、上記チャネルストップ領域内に設
けられたオーバーフロードレインに上記チャネル領域中
の過剰な光電荷を受けるCCD固体撮像素子の駆動方法
に於いて、上記チャネル領域と上記オーバーフロードレ
インとの間に電位障壁を形成しうる上記オーバーフロー
ドレインの電位に対し、 上記オーバーフロードレインを高電位として上記電位障
壁を消滅させると共に、 上記チャネル領域上に設けられた転送電極をパルス駆動
することで上記チャネル領域中の光電荷を転送駆動して
、 上記光電荷を上記チャネル領域から上記オーバーフロー
ドレインに排出せしめることを特徴とする固体撮像素子
の駆動方法。(1) A plurality of channel regions that accumulate and transfer photocharges generated by photoelectric conversion are separated from each other by a channel stop region and arranged in an array, and an overflow drain provided in the channel stop region is connected to an overflow drain provided in the channel stop region. In a method for driving a CCD solid-state imaging device that receives a photoelectric charge, the potential of the overflow drain is set at a high potential with respect to the potential of the overflow drain that can form a potential barrier between the channel region and the overflow drain. Disappearing the barrier and driving the transfer of photocharges in the channel region by pulse-driving a transfer electrode provided on the channel region to discharge the photocharges from the channel region to the overflow drain. A method for driving a solid-state image sensor, characterized by:
いて、 水平及び垂直方向に走査される上記固体撮像素子の垂直
走査期間中、 第1の期間に上記チャネル領域中の光電荷を上記オーバ
ーフロードレインに排出せしめた後、残余の第2の期間
に上記チャネル領域に光電荷を蓄積し、 この第2の期間に得た光電荷を一画面の映像情報として
出力することを特徴とする固体撮像素子の駆動方法。(2) In the method for driving a solid-state image sensor according to claim 1, during a vertical scanning period of the solid-state image sensor that is scanned in horizontal and vertical directions, photocharges in the channel region during a first period. is discharged to the overflow drain, photocharges are accumulated in the channel region during the remaining second period, and the photocharges obtained during the second period are output as one screen of video information. A method for driving a solid-state image sensor.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1157369A JPH0777434B2 (en) | 1989-06-20 | 1989-06-20 | Driving method for solid-state imaging device |
| KR1019900008215A KR100276971B1 (en) | 1989-06-20 | 1990-06-01 | Driving Method of Solid State Imaging Device |
| US07/534,236 US5057926A (en) | 1989-06-20 | 1990-06-07 | Driving method for discharging overflow charges in a solid state imaging device |
| DE69025651T DE69025651T2 (en) | 1989-06-20 | 1990-06-12 | Driving method of a solid-state image sensor |
| EP90111128A EP0403939B1 (en) | 1989-06-20 | 1990-06-12 | Method of driving a solid state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1157369A JPH0777434B2 (en) | 1989-06-20 | 1989-06-20 | Driving method for solid-state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0322768A true JPH0322768A (en) | 1991-01-31 |
| JPH0777434B2 JPH0777434B2 (en) | 1995-08-16 |
Family
ID=15648149
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1157369A Expired - Lifetime JPH0777434B2 (en) | 1989-06-20 | 1989-06-20 | Driving method for solid-state imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0777434B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5515103A (en) * | 1993-09-30 | 1996-05-07 | Sanyo Electric Co. | Image signal processing apparatus integrated on single semiconductor substrate |
| US6618085B2 (en) | 1996-11-27 | 2003-09-09 | Sanyo Electric Co., Ltd. | Image pickup apparatus for controlling the discharge of information charges in the image pickup apparatus |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6362480A (en) * | 1986-09-03 | 1988-03-18 | Toshiba Corp | Solid-state image pickup device |
| JPS6365668A (en) * | 1986-09-05 | 1988-03-24 | Nec Corp | Solid-state image sensor |
-
1989
- 1989-06-20 JP JP1157369A patent/JPH0777434B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6362480A (en) * | 1986-09-03 | 1988-03-18 | Toshiba Corp | Solid-state image pickup device |
| JPS6365668A (en) * | 1986-09-05 | 1988-03-24 | Nec Corp | Solid-state image sensor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5515103A (en) * | 1993-09-30 | 1996-05-07 | Sanyo Electric Co. | Image signal processing apparatus integrated on single semiconductor substrate |
| US6618085B2 (en) | 1996-11-27 | 2003-09-09 | Sanyo Electric Co., Ltd. | Image pickup apparatus for controlling the discharge of information charges in the image pickup apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0777434B2 (en) | 1995-08-16 |
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