JPH03230487A - Discharge type surge absorbing element - Google Patents

Discharge type surge absorbing element

Info

Publication number
JPH03230487A
JPH03230487A JP2579390A JP2579390A JPH03230487A JP H03230487 A JPH03230487 A JP H03230487A JP 2579390 A JP2579390 A JP 2579390A JP 2579390 A JP2579390 A JP 2579390A JP H03230487 A JPH03230487 A JP H03230487A
Authority
JP
Japan
Prior art keywords
discharge
thin film
surge absorbing
electrodes
gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2579390A
Other languages
Japanese (ja)
Inventor
Toshimoto Inaba
稲葉 敏元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Okaya Electric Industry Co Ltd
Original Assignee
Okaya Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Okaya Electric Industry Co Ltd filed Critical Okaya Electric Industry Co Ltd
Priority to JP2579390A priority Critical patent/JPH03230487A/en
Publication of JPH03230487A publication Critical patent/JPH03230487A/en
Pending legal-status Critical Current

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  • Thermistors And Varistors (AREA)
  • Emergency Protection Circuit Devices (AREA)

Abstract

PURPOSE:To obtain a stable surge absorbing action by providing a fine gap generating the initial creeping discharge on a discharge type surge absorbing element between discharge electrodes and a conducting thin film. CONSTITUTION:A discharge type surge absorbing element 1 is fitted with a pair of discharge electrodes 4 formed into a cap shape with a metal with good discharge characteristic such as Ni, Fe or their alloy and connected with external terminals 3 made of a Dumet wire on both ends of a columnar insulator 2 made of ceramic such as alumina, and a discharge gap 5 with the width several mm or ten end several mm is formed between the opposite end sections 4a of the electrodes 4. A conducting thin film 6 is coated on the periphery of the insulator 2, a fine gap 7 is formed between the film 6 and the opposite end sections 4a of the electrodes 4, it is sealed in an airtight container 8 made of glass together with discharge gas of rare gas such as He, and the external terminals 3 are guided to the outside. Since the fine gap 7 generating the initial creeping discharge on the element 1 is provided between the discharge electrodes 4 and the conducting thin film 6, an unstable defective contact state is eliminated, and a stable surge absorbing action is obtained.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、気密容器内に収容した放電間隙における放電
現象を利用した放電型サージ吸収素子に係り、特に安定
したサージ吸収動作を得られるとともに、長寿命化を図
った放電型サージ吸収素子に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a discharge-type surge absorption element that utilizes a discharge phenomenon in a discharge gap housed in an airtight container, and is capable of obtaining particularly stable surge absorption operation. , relates to a discharge type surge absorbing element with a long service life.

[従来の技術] 従来、電子回路に加わる誘導雷等のサージから電子回路
を保護するためのサージ吸収素子として。
[Prior Art] Conventionally, it has been used as a surge absorbing element to protect electronic circuits from surges such as induced lightning that are applied to electronic circuits.

電圧非直線特性を有する高抵抗体素子より成るバリスタ
や、放電間隙を気密容器に収容したアレスタ等が広く使
用されている。
Varistors made of high-resistance elements having nonlinear voltage characteristics, arresters whose discharge gap is housed in an airtight container, and the like are widely used.

しかし、上記バリスタは、サージ吸収の応答性に優れる
ものの、単位断面積当たりの電流耐量が比較的小さく、
シたがって大きなサージ電流を効率よく吸収することが
内置であった。また、上記アレスタは、その放電間隙に
アーク放電を生成することにより電流耐量を大きくする
ことができるのであるが、サージの印加からアーク放電
までに要する時間が上記バリスタと比較して遅く、その
応答性に問題を有していた。
However, although the above-mentioned varistors have excellent response in surge absorption, the current withstand capacity per unit cross-sectional area is relatively small.
Therefore, it was necessary to install it internally to efficiently absorb large surge currents. In addition, the above arrester can increase the current withstand capacity by generating an arc discharge in the discharge gap, but the time required from the application of a surge to the arc discharge is slower than that of the above varistor, and its response is He had sexual problems.

そこで、上記アレスタにおけるサージ吸収の応答性を改
善すべく、第3図に示す如く、略円柱状の絶縁体2の表
面に導電性薄膜6を被着させた上で、この導電性薄膜6
に幅が0.1ma+程度の微小間隙7を周回状に形成し
て導電性薄膜6を分割するとともに、絶縁体2の両端に
放電間隙5を隔てて放電電極4,4を嵌着して上記導電
性薄膜6゜6と放電電極4,4とを接続し、これを放電
ガスとともに気密容器8内に封入して外部端子3.3を
導出したサージ吸収素子10が提案されている。
Therefore, in order to improve the response of surge absorption in the arrester, as shown in FIG.
The conductive thin film 6 is divided by forming a micro gap 7 with a width of about 0.1 ma+ in a circumferential manner, and the discharge electrodes 4 are fitted on both ends of the insulator 2 with a discharge gap 5 in between. A surge absorbing element 10 has been proposed in which a conductive thin film 6.6 and discharge electrodes 4, 4 are connected, and this is sealed together with a discharge gas in an airtight container 8 to lead out an external terminal 3.3.

この微小間隙7を有するサージ吸収素子10にサージが
印加された場合、まず微小間隙7を介した導電性薄膜6
.6間に電位差が生じ、これにより微小間隙7に電子が
放出されて沿面放電が発生する2次いで、この沿面放電
に伴って発生する電子のプライミング効果により放電電
極4,4間に沿面放電が起こる。そして、この沿面放電
がサージ電流の増加によって放電間隙5のアーク放電に
移行し、このアーク放電によりサージを吸収するもので
ある。このように、微小間隙7を有するサージ吸収素子
10は1元来応答速度の速い沿面放電を利用するもので
あるため、上記バリスタと比較して略凹等の優れた応答
性を有するとともに。
When a surge is applied to the surge absorbing element 10 having this minute gap 7, first the conductive thin film 6 is applied through the minute gap 7.
.. A potential difference is generated between the discharge electrodes 4 and 6, and this causes electrons to be emitted into the minute gap 7, causing a creeping discharge.2 Next, a creeping discharge occurs between the discharge electrodes 4 and 4 due to the priming effect of the electrons generated with this creeping discharge. . Then, as the surge current increases, this creeping discharge shifts to arc discharge in the discharge gap 5, and the surge is absorbed by this arc discharge. As described above, since the surge absorbing element 10 having the minute gap 7 utilizes creeping discharge which has an inherently fast response speed, it has an excellent response such as a substantially concave shape compared to the above-mentioned varistor.

電流耐量も大きく優れたものである。The current withstand capacity is also large and excellent.

[発明が解決しよう、とする課題] しかしながら、上述の如き従来の微小間隙7を有するサ
ージ吸収素子10にあっては、放電電極4.4を18#
体2の両端に嵌着する際に放電電極4.4と導電性薄膜
6,6との間に隙間が生じて接触不良状態となり、これ
によりサージ吸収特性が不安定になるという虞れがあっ
た。
[Problems to be Solved by the Invention] However, in the conventional surge absorbing element 10 having the minute gap 7 as described above, the discharge electrode 4.4 is
When fitted to both ends of the body 2, there is a risk that a gap will be created between the discharge electrode 4.4 and the conductive thin films 6, 6, resulting in poor contact, and this will cause the surge absorption characteristics to become unstable. Ta.

更に、従来のサージ吸収素子にあっては、導電性薄膜6
,6が薄くて物理的強度が乏しいことから、サージ吸収
を繰り返すうちに、微小間隙7に形成される沿面放電に
より、導電性薄膜6.6がスパッタし、これにより微小
間隙7の電気的絶縁性が劣化し、ひいては絶縁不良状態
となり微小間11fi7としての作用を発揮しなくなる
という欠点があった。
Furthermore, in the conventional surge absorbing element, the conductive thin film 6
, 6 are thin and have poor physical strength, as the surge absorption is repeated, the conductive thin film 6.6 is sputtered due to the creeping discharge formed in the micro gap 7, which reduces the electrical insulation of the micro gap 7. There was a drawback that the properties of the 11fi7 were deteriorated, resulting in poor insulation and no longer functioning as a micro-interval 11fi7.

そこで、本発明は上述の如き問題点を解決し、安定した
サージ吸収特性が得られるとともに、サージ吸収を繰り
返しても絶縁性が劣化せずに長寿命が得られる放電型サ
ージ吸収素子の実現を目的とする。
Therefore, the present invention solves the above-mentioned problems and realizes a discharge-type surge absorption element that can obtain stable surge absorption characteristics and has a long life without deteriorating its insulation properties even after repeated surge absorption. purpose.

[課題を解決するための手段] 上述の目的を達成するたミー、本発明の放電型サージ吸
収素子は、絶縁体の表面に導電性薄膜を被着させて、上
記絶縁体の両端に、放電間隙を隔てて相対向させて放電
電極を取り付け、上記放電電極と導電性薄膜との間に微
小間隙を形成して、これを放電ガスとともに気密容器内
に収容するものである。
[Means for Solving the Problems] In order to achieve the above-mentioned object, the discharge type surge absorbing element of the present invention has a conductive thin film coated on the surface of an insulator, and discharge is applied to both ends of the insulator. Discharge electrodes are attached facing each other with a gap in between, a minute gap is formed between the discharge electrode and the conductive thin film, and the gap is housed together with the discharge gas in an airtight container.

[作用] 本発明の放電型サージ吸収素子は、上述の如き構成であ
るので、上記サージ吸収素子に所定の値を越えたサージ
が印加されると、放電電極と導電性薄膜との間の微小間
隙が放電電極間の放電間隙よりも充分に幅が狭いことか
ら、直ちに上記微小間隙に沿面放電が生成する。この沿
面放電は、放電に伴って更に電子を発生させ、この電子
のプライミング効果および導電性薄膜の抵抗とサージ電
流とによる電圧降下の増大によって放電電極間の沿面放
電へと転移する。更に、この放電電極間の沿面放電は、
サージ電流の増大によって放電間隙のアーク放電へと移
行し、このアーク放電により大電流のサージを吸収する
ことができる。
[Function] Since the discharge type surge absorbing element of the present invention has the above-described configuration, when a surge exceeding a predetermined value is applied to the surge absorbing element, microscopic damage occurs between the discharge electrode and the conductive thin film. Since the gap is sufficiently narrower than the discharge gap between the discharge electrodes, a creeping discharge is immediately generated in the minute gap. This creeping discharge further generates electrons as it discharges, and transforms into a creeping discharge between the discharge electrodes due to the priming effect of the electrons and an increase in voltage drop due to the resistance of the conductive thin film and the surge current. Furthermore, this creeping discharge between the discharge electrodes is
The increase in surge current causes a transition to arc discharge in the discharge gap, and this arc discharge can absorb large current surges.

本発明の放電型サージ吸収素子にあっては、微小間隙を
放電電極と導電性薄膜との間に設けたことにより、放電
電極と導電性薄膜との電気的接続が不要となり、不安定
な接触不良状態がなくなって安定したサージ吸収動作が
得られるものである。
In the discharge type surge absorbing element of the present invention, by providing a minute gap between the discharge electrode and the conductive thin film, there is no need for electrical connection between the discharge electrode and the conductive thin film, resulting in unstable contact. This eliminates defective conditions and provides stable surge absorption operation.

また、微小間隙を放電電極と導電性薄膜との間に設けた
本発明の放電型サージ吸収素子にあっては、放電電極が
物理的にスパッタしにくいことから、導電性薄膜間に設
けた従来の微小間隙と比較して、スパッタによって絶縁
劣化状態を惹起する虞れが少なく、放電型サージ吸収素
子の長寿命化を企図することができるものである。
In addition, in the discharge type surge absorbing element of the present invention in which a minute gap is provided between the discharge electrode and the conductive thin film, since the discharge electrode is physically difficult to sputter, the conventional surge absorbing element provided between the conductive thin film is Compared to the minute gap, there is less risk of causing insulation deterioration due to sputtering, and it is possible to extend the life of the discharge type surge absorbing element.

[実施例] 以下1図面に基づいて本発明の実施例について説明する
[Example] Hereinafter, an example of the present invention will be described based on one drawing.

第1図は、本発明の一実施例に係る放電型サージ吸収素
子を示し、第1図(a)は概略斜視図。
FIG. 1 shows a discharge type surge absorbing element according to an embodiment of the present invention, and FIG. 1(a) is a schematic perspective view.

第1図(b)は要部断面図である0図において、放電型
サージ吸収素子1は、アルミナ、フォルステライト、ス
テアタイト等のセラミックスから成る略円柱状の絶縁体
2の両端に、デュメット線から成る外部端子3,3を接
続したニッケル、鉄あるいはこれらの合金等、放電特性
が良好な金属をキャップ状に形成した一対の放電電極4
,4を嵌着や接着等の手段で取り付けて、この放電電極
4゜4における対向端部4a、4a間に幅数m乃至10
数m程度の放電間隙5を形成している。また、上記絶縁
体2周面に導電性薄膜6を被着して、この導電性薄膜6
と上記放電電極4,4の対向端部4a、4aとの間にそ
れぞれ微小間隙7,7を形成し、これを、I−re、N
e、Ar等の希ガスから成る放電ガスとともにガラス等
から成る気密容器8内に封入し、上記外部端子3,3を
外部に導出した構造を有している。
In FIG. 1(b), which is a sectional view of the main part, the discharge type surge absorbing element 1 has a dumet wire attached to both ends of a substantially cylindrical insulator 2 made of ceramics such as alumina, forsterite, steatite, etc. A pair of discharge electrodes 4 made of a cap-shaped metal with good discharge characteristics, such as nickel, iron, or an alloy thereof, to which external terminals 3 and 3 are connected.
, 4 by fitting or adhesion, and a width of several meters to 10 mm is formed between the opposing ends 4a and 4a of the discharge electrode 4.
A discharge gap 5 of about several meters is formed. Further, a conductive thin film 6 is deposited on the circumferential surface of the insulator 2, and this conductive thin film 6 is
and the opposing ends 4a, 4a of the discharge electrodes 4, 4, respectively, form minute gaps 7, 7, which are I-re, N
It has a structure in which it is sealed in an airtight container 8 made of glass or the like together with a discharge gas made of a rare gas such as E, Ar, etc., and the external terminals 3 are led out to the outside.

上記微小間隙7,7は、絶縁体2周面における放電電極
4,4が取り付けられる部分および微小間隙7が形成さ
れる部分を予めマスキングした上で、カーボンや導電性
セラミックス等、所定の抵抗値を有する導電材料を吹き
付け、蒸着、塗布等の方法により被着させ、その後マス
キングを取り除き、放電電極4,4を取り付けて形成し
たり、絶縁体2周面全体に導電性薄膜6を被着させた後
The minute gaps 7, 7 are made of carbon, conductive ceramics, etc. with a predetermined resistance value after masking in advance the portions of the peripheral surface of the insulator 2 where the discharge electrodes 4, 4 are attached and the portion where the minute gap 7 is formed. A conductive material having a conductive material is deposited by a method such as spraying, vapor deposition, or coating, and then the masking is removed and discharge electrodes 4 are attached and formed, or a conductive thin film 6 is deposited on the entire circumferential surface of the insulator 2. After.

研磨、切削等の機械加工手段により不要な導電性薄膜部
分を取り除き、放電電極4,4を取り付けて形成したり
することができる。
The discharge electrodes 4, 4 can be formed by removing unnecessary conductive thin film portions by machining means such as polishing or cutting, and then attaching the discharge electrodes 4, 4.

また、上記微小間隙7,7は、第2図に示す如く、絶縁
体2の周面全体に導電性薄膜6を被着した後、この導電
性薄膜6における微小間隙7,7が形成される位置と整
量等の位置に、切条機もしくはレーザー加工機等により
、必要とされる微小間隙7,7の幅よりも幅広の2本の
溝を形成して、この部分の導電性薄膜を取り除き、上記
絶縁体2の両端に放電電極4,4を取り付けて形成して
もよい。
Further, as shown in FIG. 2, the minute gaps 7, 7 are formed by depositing a conductive thin film 6 on the entire circumferential surface of the insulator 2, and then forming the minute gaps 7, 7 in this conductive thin film 6. Two grooves wider than the required width of the micro gaps 7, 7 are formed using a cutting machine or a laser processing machine at the desired positions, and the conductive thin film in these areas is cut. Alternatively, the insulator 2 may be removed, and discharge electrodes 4, 4 may be attached to both ends of the insulator 2.

この場合、上記2本の溝により3分割された導電性薄膜
6a、6.6aの中央部分の導電性薄膜6の両端部と、
放電電極4,4の対向端部4a。
In this case, both ends of the conductive thin film 6 at the center of the conductive thin film 6a, 6.6a divided into three parts by the two grooves,
Opposite ends 4a of discharge electrodes 4,4.

4aとのそれぞれの間隙幅が微小間隙7,7の幅となる
ように、放電電極4,4の絶縁体2に対する取り付は位
置を設定する。尚、左右の導電性薄膜6a、6aと放電
電極4,4との電気的接続は不要であるが、これらが電
気的に接続される場合には、上記導電性薄膜6a、6a
における微小間隙7,7側の端部は、上記放電電極4,
4の各対向端部4a、4aよりも奥に位置させる必要が
ある。これは、サージ吸収における最初の沿面放電を放
電電極4,4の対向端部4a、4aと、中央部分の導電
性薄膜6の両端部との間に生成させるためである。
The attachment positions of the discharge electrodes 4, 4 to the insulator 2 are set so that the respective gap widths with respect to the discharge electrodes 4a are the widths of the minute gaps 7, 7. Note that electrical connection between the left and right conductive thin films 6a, 6a and the discharge electrodes 4, 4 is not necessary, but when these are electrically connected, the conductive thin films 6a, 6a are connected electrically.
The end portion on the micro gap 7, 7 side is the discharge electrode 4,
It is necessary to position it deeper than the opposing ends 4a, 4a of 4. This is to generate the first creeping discharge in surge absorption between the opposing ends 4a, 4a of the discharge electrodes 4, 4 and both ends of the conductive thin film 6 in the central portion.

上記微小間隙7,7の幅は、サージ吸収の際の放電開始
電圧を考慮し、封入する放電ガスの種類。
The width of the minute gaps 7, 7 is determined based on the type of discharge gas to be filled in, taking into consideration the discharge starting voltage during surge absorption.

ガス圧、放電間隙幅等とともに適宜な値に設定する。こ
の幅は、概ね200μm以下が好適であり。
Set to appropriate values along with gas pressure, discharge gap width, etc. This width is preferably approximately 200 μm or less.

この値を越えると、条件によっては微小間隙7゜7にお
ける電界集中度が低下して放電遅れが大きくなる虞れを
生じる。
If this value is exceeded, depending on the conditions, the degree of electric field concentration in the minute gap 7.7 may decrease and the discharge delay may increase.

尚、放電電極4,4の対向端部4a、4a間の絶縁体2
表面に被着させた導電性薄膜6が、放電電極4,4とは
電気的に独立していることから、導電性薄膜6に電子が
接触した場合、これが蓄積され、この電子によりサージ
吸収の応答性が向上することとなる。
Note that the insulator 2 between the opposing ends 4a, 4a of the discharge electrodes 4, 4
Since the conductive thin film 6 deposited on the surface is electrically independent from the discharge electrodes 4, 4, when electrons come into contact with the conductive thin film 6, they are accumulated, and these electrons are used to absorb surges. Responsiveness will be improved.

[発明の効果コ 以上詳述した如く、本発明によれば、放電型サージ吸収
素子における最初の沿面放電が生成する微小間隙を、放
電電極と導電性薄膜との間に設けたことにより、放電電
極と導電性薄膜との電気的な接続が不要となり、不安定
な接触不良状態がなくなって安定したサージ吸収動作が
得られるものである。また、Wj小間隙の一端側の放電
電極が物理的にスパッタしにくいことから、微小間隙を
導電性薄膜間に設けた従来の場合と比較して、スパッタ
による絶縁劣化状態を惹起する虞れが少なく、放電型サ
ージ吸収素子を更に長寿命化するものである。
[Effects of the Invention] As detailed above, according to the present invention, by providing a minute gap between the discharge electrode and the conductive thin film in which the initial creeping discharge is generated in the discharge type surge absorbing element, the discharge This eliminates the need for electrical connection between the electrode and the conductive thin film, eliminates unstable contact failure, and provides stable surge absorption operation. In addition, since the discharge electrode at one end of the Wj small gap is physically difficult to sputter, there is a risk of causing insulation deterioration due to sputtering compared to the conventional case where a small gap is provided between conductive thin films. This further extends the life of the discharge type surge absorbing element.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、本発明の一実施例に係る放電型サージ吸収素
子を示し、第1図(a)は概略斜視図、第1図(b)は
要部断面図、第2図は本発明の他の実施例を示す要部断
面図であり、第3図は従来の放電型サージ吸収素子を示
し、第3図(a)は概略斜視図、第3図(b)は要部断
面図である。 1・・・放電型サージ吸収素子  2・・・絶縁体4・
・・放電電極  5・・・放電間隙  6・・・導電性
薄膜  7・・・微小間隙  8・・・気密容器時 許 出 願 人 岡谷電機産業株式会社
FIG. 1 shows a discharge type surge absorbing element according to an embodiment of the present invention, FIG. 1(a) is a schematic perspective view, FIG. 1(b) is a sectional view of a main part, and FIG. 2 is a diagram of the present invention. FIG. 3 is a sectional view of a main part showing another embodiment, FIG. 3 shows a conventional discharge type surge absorption element, FIG. 3(a) is a schematic perspective view, and FIG. 3(b) is a sectional view of a main part. It is. 1... Discharge type surge absorption element 2... Insulator 4.
...Discharge electrode 5...Discharge gap 6...Conductive thin film 7...Minute gap 8...Airtight container Applicant: Okaya Electric Industry Co., Ltd.

Claims (1)

【特許請求の範囲】[Claims] 絶縁体の表面に導電性薄膜を被着させて、上記絶縁体の
両端に、放電間隙を隔てて相対向させて放電電極を取り
付け、上記放電電極と導電性薄膜との間に微小間隙を形
成して、これを放電ガスとともに気密容器内に収容した
放電型サージ吸収素子。
A conductive thin film is deposited on the surface of the insulator, and discharge electrodes are attached to both ends of the insulator so as to face each other across a discharge gap, thereby forming a minute gap between the discharge electrode and the conductive thin film. This is a discharge-type surge absorption element in which this is housed in an airtight container together with a discharge gas.
JP2579390A 1990-02-05 1990-02-05 Discharge type surge absorbing element Pending JPH03230487A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2579390A JPH03230487A (en) 1990-02-05 1990-02-05 Discharge type surge absorbing element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2579390A JPH03230487A (en) 1990-02-05 1990-02-05 Discharge type surge absorbing element

Publications (1)

Publication Number Publication Date
JPH03230487A true JPH03230487A (en) 1991-10-14

Family

ID=12175716

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2579390A Pending JPH03230487A (en) 1990-02-05 1990-02-05 Discharge type surge absorbing element

Country Status (1)

Country Link
JP (1) JPH03230487A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018156800A (en) * 2017-03-17 2018-10-04 三菱マテリアル株式会社 Surge protective element
JP2018535510A (en) * 2015-09-25 2018-11-29 エプコス アクチエンゲゼルシャフトEpcos Ag Overvoltage protection device and method for manufacturing overvoltage protection device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63207078A (en) * 1987-02-24 1988-08-26 松下電工株式会社 Lightning arresting tube
JPH03138882A (en) * 1989-10-23 1991-06-13 Teikoku Tsushin Kogyo Co Ltd Surge absorption element and its manufacturing method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63207078A (en) * 1987-02-24 1988-08-26 松下電工株式会社 Lightning arresting tube
JPH03138882A (en) * 1989-10-23 1991-06-13 Teikoku Tsushin Kogyo Co Ltd Surge absorption element and its manufacturing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018535510A (en) * 2015-09-25 2018-11-29 エプコス アクチエンゲゼルシャフトEpcos Ag Overvoltage protection device and method for manufacturing overvoltage protection device
US10923885B2 (en) 2015-09-25 2021-02-16 Epcos Ag Surge protection component and method for producing a surge protection component
JP2018156800A (en) * 2017-03-17 2018-10-04 三菱マテリアル株式会社 Surge protective element

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