JPH03230488A - Discharge type surge absorbing element - Google Patents
Discharge type surge absorbing elementInfo
- Publication number
- JPH03230488A JPH03230488A JP2579490A JP2579490A JPH03230488A JP H03230488 A JPH03230488 A JP H03230488A JP 2579490 A JP2579490 A JP 2579490A JP 2579490 A JP2579490 A JP 2579490A JP H03230488 A JPH03230488 A JP H03230488A
- Authority
- JP
- Japan
- Prior art keywords
- discharge
- thin film
- absorbing element
- surge absorbing
- gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Thermistors And Varistors (AREA)
- Emergency Protection Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は、気密容器内に収容した放電間隙における放電
現象を利用した放電型サージ吸収素子に係り、特に寿命
特性の向上を図った放電型サージ吸収素子に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a discharge type surge absorbing element that utilizes a discharge phenomenon in a discharge gap housed in an airtight container, and in particular to a discharge type surge absorbing element with improved life characteristics. Related to surge absorption elements.
[従来の技術]
従来、電子回路に加わる誘導雷等のサージから電子回路
を保護するためのサージ吸収素子として、電圧非直線特
性を有する高抵抗体素子より成るバリスタや、放電間隙
を気密容器に収容したアレスタ等が広く使用されている
。[Prior Art] Conventionally, varistors made of high-resistance elements with non-linear voltage characteristics have been used as surge absorbing elements to protect electronic circuits from surges caused by induced lightning, etc. Arresters, etc., are widely used.
しかし、上記バリスタは、サージ吸収の応答性に優れる
ものの、単位断面積歯たりの電流耐量が比較的小さく、
シたがって大きなサージ電流を効率よく吸収することが
困難であった。また、上記アレスタは、その放電間隙に
アーク放電を生成することにより電流耐量を大きくする
ことができるのであるが、サージの印加からアーク放電
までに要する時間が上記バリスタと比較して遅く、その
応答性に問題を有していた。However, although the above-mentioned varistor has excellent surge absorption response, the current withstand capacity per unit cross-sectional area tooth is relatively small.
Therefore, it has been difficult to efficiently absorb large surge currents. In addition, the above arrester can increase the current withstand capacity by generating an arc discharge in the discharge gap, but the time required from the application of a surge to the arc discharge is slower than that of the above varistor, and its response is He had sexual problems.
そこで、上記アレスタにおけるサージ吸収の応答性を改
善すべく、第3図に示す如く、略円柱状の絶縁体2の表
面に導電性薄膜6を被着させた上で、この導電性薄膜6
に幅がO,lam程度の微小間隙7を周回状に形成して
導電性薄膜6を分割するとともに、絶縁体2の両端に放
電間隙5を隔てて放電電極4,4′を嵌着して上記導電
性薄膜6゜6と放電電極4,4′とを接続し、これを放
電ガスとともに気密容器8内に封入して外部端子3゜3
′を導出したサージ吸収素子10が提案されている。Therefore, in order to improve the response of surge absorption in the arrester, as shown in FIG.
A minute gap 7 with a width of about O.lam is formed in a circumferential manner to divide the conductive thin film 6, and discharge electrodes 4, 4' are fitted on both ends of the insulator 2 with a discharge gap 5 between them. The conductive thin film 6゜6 and the discharge electrodes 4, 4' are connected, and this is sealed together with the discharge gas in an airtight container 8, and the external terminal 3゜3 is connected.
A surge absorbing element 10 has been proposed that derives the value .
この微小間隙7を有するサージ吸収素子1oにサージが
印加された場合、まず微小間隙7を介した導電性薄膜6
,6間に電位差が生じ、これにより微小間隙7に電子が
放出されて沿面放電が発生する。次いで、この沿面放電
に伴って発生する電子のプライミング効果により放電電
極4,4′間に沿面放電が起こる。そして、この沿面放
電がサージ電流の増加によって放電間隙5のアーク放電
に移行し、このアーク放電によりサージを吸収するもの
である。このように、微小間隙7を有するサージ吸収素
子10は、元来応答速度の速い沿面放電を利用するもの
であるため、上記バリスタと比較して整向等の優れた応
答性を有するとともに、電流耐量も大きく優れたもので
ある。When a surge is applied to the surge absorbing element 1o having this minute gap 7, first the conductive thin film 6 is applied through the minute gap 7.
, 6, which causes electrons to be emitted into the minute gap 7, causing creeping discharge. Next, a creeping discharge occurs between the discharge electrodes 4 and 4' due to the priming effect of electrons generated with this creeping discharge. Then, as the surge current increases, this creeping discharge shifts to arc discharge in the discharge gap 5, and the surge is absorbed by this arc discharge. As described above, since the surge absorbing element 10 having the minute gap 7 utilizes creeping discharge which has a fast response speed, it has superior responsiveness such as alignment compared to the above-mentioned varistor, and also has a higher current response. It also has excellent durability.
[発明が解決しようとする課題]
しかしながら、上述の如き従来の微小間隙7を有するサ
ージ吸収素子10にあっては、導電性薄膜6,6が薄く
被着されていて物理的強度が乏しいことから、サージ吸
収を繰り返すうちに、微小間隙7に形成される沿面放電
により、導電性薄膜6.6がスパッタし、これにより微
小間隙7の電気的絶縁性が劣化し、ひいては絶縁不良状
態となり微小間隙7としての作用を発揮しなくなるとい
う欠点があった。[Problems to be Solved by the Invention] However, in the conventional surge absorbing element 10 having the minute gap 7 as described above, the conductive thin films 6, 6 are thinly deposited and have poor physical strength. As the surge absorption is repeated, the conductive thin film 6.6 is sputtered due to the creeping discharge formed in the micro gap 7, which deteriorates the electrical insulation of the micro gap 7, resulting in poor insulation and the micro gap. There was a drawback that the function as 7 could no longer be exerted.
そこで、本発明は上述の如き問題点を解決し、サージ吸
収を繰り返しても絶縁性が劣化せずに長寿命が得られる
放電型サージ吸収素子の実現を目的とする。SUMMARY OF THE INVENTION Therefore, the present invention aims to solve the above-mentioned problems and to realize a discharge type surge absorbing element that can have a long life without deteriorating its insulation properties even after repeated surge absorption.
[課題を解決するための手段]
上述の目的を達成するため、本発明の放電型サージ吸収
素子は、絶縁体の表面に導電性薄膜を被着させて、上記
絶縁体の両端に、放電間隙を隔てて相対向させて放電電
極を取り付け、上記一方の放電電極と導電性薄膜との間
に微小間隙を形成するとともに、上記他方の放電電極と
導電性薄膜とを接続して、これを放電ガスとともに気密
容器内に収容するものである。[Means for Solving the Problems] In order to achieve the above object, the discharge type surge absorbing element of the present invention has a conductive thin film coated on the surface of an insulator, and a discharge gap is formed at both ends of the insulator. Discharge electrodes are attached facing each other with a gap between them, a minute gap is formed between the one discharge electrode and the conductive thin film, and the other discharge electrode and the conductive thin film are connected to cause a discharge. It is stored in an airtight container along with the gas.
[作用]
本発明の放電型サージ吸収素子は、上述の如き構成であ
るので、上記サージ吸収素子にサージが印加されると、
微小間隙を介した放電電極と導電性薄膜との間に電位差
が生じ、これが所定の値を超えると、直ちに上記微小間
隙に電子が放出されて沿面放電が生成する。この沿面放
電は、放電に伴って更に電子を発生させ、この電子のプ
ライミング効果および導電性薄膜の抵抗とサージ電流と
による電圧降下の増大によって放電電極間の沿面放電へ
と転移する。更に、この放電電極間の沿面放電は、サー
ジ電流の増大によって放電間隙のアーク放電へと移行し
、このアーク放電により大電流のサージを吸収すること
ができる。[Function] Since the discharge type surge absorbing element of the present invention has the above-described configuration, when a surge is applied to the surge absorbing element,
A potential difference is generated between the discharge electrode and the conductive thin film across the microgap, and when this exceeds a predetermined value, electrons are immediately emitted into the microgap and a creeping discharge is generated. This creeping discharge further generates electrons as it discharges, and transforms into a creeping discharge between the discharge electrodes due to the priming effect of the electrons and an increase in voltage drop due to the resistance of the conductive thin film and the surge current. Furthermore, this creeping discharge between the discharge electrodes shifts to arc discharge in the discharge gap due to an increase in surge current, and this arc discharge can absorb large current surges.
本発明の放電型サージ吸収素子にあっては、微小間隙を
放電電極と導電性薄膜との間に設けており、この放電電
極が物理的にスパッタしにくいことから、導電性薄膜間
に設けた従来の微小間隙と比較して、スパッタによって
絶縁劣化状態を惹起する虞れが少なく、放電型サージ吸
収素子の長寿命化を企図することができるものである。In the discharge type surge absorbing element of the present invention, a minute gap is provided between the discharge electrode and the conductive thin film, and since this discharge electrode is physically difficult to sputter, the gap is provided between the conductive thin film. Compared to conventional microgaps, there is less risk of causing insulation deterioration due to sputtering, and it is possible to extend the life of the discharge type surge absorbing element.
[実施例]
以下、図面に基づいて本発明の実施例について説明する
。[Example] Hereinafter, an example of the present invention will be described based on the drawings.
第1図は、本発明の一実施例に係る放電型サージ吸収素
子を示し、第1図(a)は概略斜視図、第1図(b)は
要部断面図である。図において。FIG. 1 shows a discharge type surge absorbing element according to an embodiment of the present invention, FIG. 1(a) is a schematic perspective view, and FIG. 1(b) is a sectional view of a main part. In fig.
放電型サージ吸収素子1は、アルミナ、フォルステライ
ト、ステアタイト等のセラミックスから成る略円柱状の
絶縁体2の両端に、デュメット線から成る外部端子3,
3′を接続したニッケル、鉄あるいはこれらの合金等、
放電特性が良好な金属をキャップ状に形成した一対の放
電電極4.4′を嵌着や接着等の手段で取り付けて、こ
の放電電極4,4′における対向端部4a、4a’間に
放電間隙5を形成している。また、上記絶縁体2周面に
導電性薄膜6を被着して、この導電性薄膜6と上記一方
の放電電極4の対向端部4aとの間に微小間隙7を形成
し、更に上記他方の放電電極4′と導電性薄膜6とを接
続して、これを、He 。The discharge type surge absorbing element 1 has an approximately cylindrical insulator 2 made of ceramics such as alumina, forsterite, steatite, etc., and external terminals 3 made of dumet wires at both ends thereof.
Nickel, iron or alloys of these, etc. with 3' connected,
A pair of discharge electrodes 4 and 4' made of a cap-shaped metal with good discharge characteristics are attached by means such as fitting or adhesion, and a discharge is generated between the opposite ends 4a and 4a' of the discharge electrodes 4 and 4'. A gap 5 is formed. Further, a conductive thin film 6 is deposited on the circumferential surface of the insulator 2, a minute gap 7 is formed between the conductive thin film 6 and the opposite end 4a of the one discharge electrode 4, and the other The discharge electrode 4' and the conductive thin film 6 were connected and then heated with He.
N e y A r等の希ガスから成る放電ガスととも
にガラス等から成る気密容器8内に封入し、上記外部端
子3,3′を外部に導出した構造を有している。It has a structure in which it is sealed in an airtight container 8 made of glass or the like together with a discharge gas made of a rare gas such as N ey Ar, and the external terminals 3 and 3' are led out.
上記微小間隙7は、絶縁体2周面における一方の放電電
極4が取り付けられる部分および微小間隙7が形成され
る部分を予めマスキングした上で、カーボンや導電性セ
ラミックス等を吹き付け、蒸着、塗布等の方法により被
着させ、その後マスキングを取り除き、一方の放電電極
4を取り付けて形成したり、絶縁体2周面全体に導電性
薄膜6を被着させた後、研磨、切削等の機械加工手段に
より不要な導電性薄膜部分を取り除き、一方の放電電極
4を取り付けて形成したりすることができる。The microgap 7 is created by spraying, vapor deposition, coating, etc. with carbon, conductive ceramics, etc. after masking in advance the part of the peripheral surface of the insulator 2 where one of the discharge electrodes 4 is attached and the part where the microgap 7 is formed. After the masking is removed and one of the discharge electrodes 4 is attached and formed, or the conductive thin film 6 is deposited on the entire circumferential surface of the insulator 2, machining means such as polishing and cutting are applied. By removing unnecessary conductive thin film portions, one discharge electrode 4 can be attached and formed.
また、上記微小間隙7は、第2図に示す如く、絶縁体2
の周面全体に導電性薄膜6を被着した後。Furthermore, as shown in FIG. 2, the minute gap 7 is
After applying a conductive thin film 6 to the entire circumferential surface of the.
この導電性薄膜6における微小間隙7が形成される位置
と整量等の位置に、切条機もしくはレーザー加工機等に
より、必要とされる微小間隙7の幅よりも幅広の溝を形
成して、この部分の導電性薄膜を取り除き、上記絶縁体
2における溝が形成されている側の端部に、一方の放電
電極4を取付けて形成してもよい。尚、一方の放電電極
4が取付けられている側の導電性薄膜6aと一方の放電
電極4との電気的接続は不要であるが、これらが電気的
に接続される場合には、上記導電性薄膜6aにおける微
小間隙7側の端部は、上記一方の放電電極4の対向端部
4aよりも奥に位置させる必要がある。これは、サージ
吸収における最初の沿面放電を、一方の放電電極4の対
向端部4aと、他方の放電電極4′に接続されている導
電性薄膜6の端部との間に生成させるためである。In this conductive thin film 6, grooves wider than the required width of the minute gap 7 are formed using a cutting machine, a laser processing machine, etc. at the position where the minute gap 7 is to be formed and at a position with a uniform width. The conductive thin film in this portion may be removed and one discharge electrode 4 may be attached to the end of the insulator 2 on the side where the groove is formed. Note that electrical connection between the conductive thin film 6a on the side to which one discharge electrode 4 is attached and one discharge electrode 4 is not necessary, but when these are electrically connected, the above-mentioned conductive The end of the thin film 6a on the microgap 7 side needs to be located deeper than the opposing end 4a of the one discharge electrode 4. This is because the first creeping discharge in surge absorption is generated between the opposing end 4a of one discharge electrode 4 and the end of the conductive thin film 6 connected to the other discharge electrode 4'. be.
上記微小間隙7の幅は、サージ吸収の際の放電開始電圧
を考慮し、封入する放電ガスの種類、ガス圧、放電間隙
幅等とともに適宜な値に設定する。The width of the minute gap 7 is set to an appropriate value in consideration of the discharge starting voltage during surge absorption, as well as the type of discharge gas to be filled, the gas pressure, the discharge gap width, etc.
この幅は、概ね200μm以下が好適であり、この値を
越えると条件によっては微小間隙7における電界集中度
が低下して放電遅れが大きくなる虞れを生じる。This width is preferably approximately 200 μm or less, and if this value is exceeded, the degree of electric field concentration in the minute gap 7 may decrease depending on the conditions, resulting in an increase in discharge delay.
[発明の効果コ
以上詳述した如く、本発明によれば、放電型サージ吸収
素子における最初の沿面放電が生成する微小間隙を、放
電電極と導電性薄膜との間に設けたことにより、物理的
強度が劣る導電性薄膜よりも放電電極の方がスパッタし
にくいことから、導電性薄膜間に設けた従来の微小間隙
と比較してスパッタによる絶縁劣化状態を惹起する虞れ
が少なく、放電型サージ吸収素子の寿命特性を向上させ
得るものである。[Effects of the Invention] As described in detail above, according to the present invention, by providing a minute gap between the discharge electrode and the conductive thin film in which the first creeping discharge is generated in the discharge type surge absorbing element, the physical Since discharge electrodes are less prone to sputtering than conductive thin films, which have lower physical strength, there is less risk of causing insulation deterioration due to sputtering than with conventional micro-gaps between conductive thin films. This makes it possible to improve the life characteristics of the surge absorbing element.
第1図は、本発明の一実施例に係る放電型サージ吸収素
子を示し、第1図(a)は概略斜視図、第1図(b)は
要部断面図、第2図は本発明の他の実施例を示す要部断
面図であり、第3図は従来の放電型サージ吸収素子を示
し、第3図(a)は概略斜視図、第3図(b)は要部断
面図である。
1・・・放電型サージ吸収素子 2・・・絶縁体4.
4′・・・放電電極 5・・・放電間隙 6・・・
導電性薄膜 7・・・微小間隙 8・・・気密容器
筒
図
(a)
−
第
図
(b)
第
2
図
第
3図
(a)
3′
第
図
(b)FIG. 1 shows a discharge type surge absorbing element according to an embodiment of the present invention, FIG. 1(a) is a schematic perspective view, FIG. 1(b) is a sectional view of a main part, and FIG. 2 is a diagram of the present invention. FIG. 3 is a sectional view of a main part showing another embodiment, FIG. 3 shows a conventional discharge type surge absorption element, FIG. 3(a) is a schematic perspective view, and FIG. 3(b) is a sectional view of a main part. It is. 1... Discharge type surge absorption element 2... Insulator 4.
4'...Discharge electrode 5...Discharge gap 6...
Conductive thin film 7...Minute gap 8...Airtight container cylinder diagram (a) - Figure (b) Figure 2 Figure 3 (a) 3' Figure (b)
Claims (1)
両端に、放電間隙を隔てて相対向させて放電電極を取り
付け、上記一方の放電電極と導電性薄膜との間に微小間
隙を形成するとともに、上記他方の放電電極と導電性薄
膜とを接続して、これを放電ガスとともに気密容器内に
収容した放電型サージ吸収素子。A conductive thin film is deposited on the surface of the insulator, and discharge electrodes are attached to both ends of the insulator so as to face each other with a discharge gap in between, and a minute gap is formed between one of the discharge electrodes and the conductive thin film. a discharge type surge absorbing element, in which the other discharge electrode and a conductive thin film are connected, and this is housed in an airtight container together with a discharge gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2579490A JPH03230488A (en) | 1990-02-05 | 1990-02-05 | Discharge type surge absorbing element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2579490A JPH03230488A (en) | 1990-02-05 | 1990-02-05 | Discharge type surge absorbing element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03230488A true JPH03230488A (en) | 1991-10-14 |
Family
ID=12175745
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2579490A Pending JPH03230488A (en) | 1990-02-05 | 1990-02-05 | Discharge type surge absorbing element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03230488A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58198884A (en) * | 1982-05-14 | 1983-11-18 | 三菱鉱業セメント株式会社 | Surge absorbing element |
| JPS63207078A (en) * | 1987-02-24 | 1988-08-26 | 松下電工株式会社 | Lightning arresting tube |
-
1990
- 1990-02-05 JP JP2579490A patent/JPH03230488A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58198884A (en) * | 1982-05-14 | 1983-11-18 | 三菱鉱業セメント株式会社 | Surge absorbing element |
| JPS63207078A (en) * | 1987-02-24 | 1988-08-26 | 松下電工株式会社 | Lightning arresting tube |
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