JPH0323236A - Optical member for laser light - Google Patents

Optical member for laser light

Info

Publication number
JPH0323236A
JPH0323236A JP23298289A JP23298289A JPH0323236A JP H0323236 A JPH0323236 A JP H0323236A JP 23298289 A JP23298289 A JP 23298289A JP 23298289 A JP23298289 A JP 23298289A JP H0323236 A JPH0323236 A JP H0323236A
Authority
JP
Japan
Prior art keywords
laser light
optical system
laser
quartz glass
glass material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23298289A
Other languages
Japanese (ja)
Other versions
JPH0624997B2 (en
Inventor
Shigeru Yamagata
茂 山形
Kyoichi Inagi
恭一 稲木
Toshikatsu Matsutani
松谷 利勝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Quartz Products Co Ltd
Original Assignee
Shin Etsu Quartz Products Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Quartz Products Co Ltd filed Critical Shin Etsu Quartz Products Co Ltd
Priority to JP1232982A priority Critical patent/JPH0624997B2/en
Publication of JPH0323236A publication Critical patent/JPH0323236A/en
Publication of JPH0624997B2 publication Critical patent/JPH0624997B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Glass Compositions (AREA)
  • Lasers (AREA)

Abstract

PURPOSE:To impart excellent laser light resistance to the optical member for laser light over a long period by using a high-purity synthetic quartz glass material freed of oxygen defects and in which appropriate amts. of the OH group and occluded hydrogen are incorporated in the glass structure to form the member. CONSTITUTION:A high-purity synthetic quartz glass material contg. >=100ppm OH group, having no oxygen defects in its glass structure and in which gaseous hydrogen is occluded is prepared. The content of the gaseous hydrogen is appropriately set so that the number of the hydrogen molecules to be liberated when the glass material is heated to 1000 deg.C under vacuum is controlled to >=1X10<20> (molecules/m<2>). An optical member for laser light to be used for the laser light over the wavelength region at <= about 400 nm is made from the quartz glass material. A decrease in transmissivity, variations in refractive index, etc., are not caused in the optical member even if the member is irradiated with excimer laser light for a long time.

Description

【発明の詳細な説明】 「産東上の利用分!’?J 太発明はレンズ,窓部材,ミラー、プリズム、フィルタ
,エタロン板,その他のレーザ光用光学系に係り,特に
略400nm以下の特定波長城で使用されるレーザ光用
光学系部材に関する.「従来の技術』 近年LSIの微細化、高集積化に伴ない例えばウエハ上
に回路パターンを描画するリングラフィ技術においても
サブミクロン単位の描画技術の開発が急がれているが、
最近の光学系,光源,フォトレジスト等の着実な進歩か
らみてやはり光リソグラフィーが主流になるものと推定
されるが、光リソグラフィーの欠点として露光波長が大
きいため,回折により解像力が制限されるという問題が
あり,その解決策として光の短波長化が検討されている
. しかしながら、光の短波長化を図る為に400 ns以
下の紫外線を用いた場合は,従来の光学ガラスを用いた
レンズでは使用波長が385n■ ( iiJi)付近
より光透過率が急激に低下して,言い変えれば光吸収に
よる発熱が生じ、該レンズの焦点位置やその他の特性を
狂わせることになる. この為、レンズ材料を従来の光学ガラスから石英ガラス
に代えるとともに、石英ガラスを用いた場合における色
収差の発生を防止する為にスペクトル巾の狭いレーザ光
を使うことが考えられ、特に該レーザの中で最も完成度
の高いものがエキシマレーザである. しかしながら前記エキシマレーザ光は従来使用されてき
た光源に比較して極めてパワーが大であり而もκrF(
248ns) ,XeC文(308nm) .ArF(
 193ns)等の発振波長が略350 nm以下の短
波長レーザ光を用いた場合は、例え前記レーザ光用光学
系部材に石英ガラスを用いて製作したとしても前記レー
ザ光が長時間照射されるとレンズ等の光学系がダメージ
を受け、透過率の低下、絶対屈折率の上昇,屈折率分布
の変動や蛍光が発生し、特にエネルギー密度が高い場合
は最終的にクラックが発生するという問題が生じる. そして前記透過率等の低下の原因の一つは前記石英ガラ
ス中に存在する金属不純物に起因するとされ、この為前
記光学系に天然石英を出発母材とせずに、高純度化され
たSiCl4等の珪素化合物を用いて.金属元素の混入
を極力排除しながら高純度の合或石英ガラスを形成し、
該合戊石英ガラスを母材としてレーザ光用のレンズ等を
製作し、前記欠点の解消を図ったが、尚、高出力で且つ
短波長レーザ光用光学系として満足する結果が得られな
かった. そこで太出願人は、先に前記レンズ等を製造する為の母
材,言い換えればレーザ光学系素体を高純度の合成石英
ガラスで形成するとともに,該ガラス組織中のOH基含
有量を300PP■以上に設定したレーザ光学系素体を
提案し(#願昭82−323882号,以下第l先頭技
術という)、そして更に本出願人は、前記レーザ光学系
素体を形成する合或石英ガラス組織中に含まれる不純物
濃度をより低減する事により、該ガラス組織中のOH基
含有量を100pp■まで緩和した場合においても所期
の効果を達或し得るレーザ光学系素休を提案している.
(平威元年5月30日出願、以下第2先願技術という) 「発明が解決しようとする課題」 しかしながら前記OH基含有量と純度規制を行ったレー
ザ光学系素体は、それ自体では確かに耐レーザ性が向上
するが、該素体を用いてレンズその他の光学系を形威し
た場合に必ずしも所望の効果を連戊し得ない事が判明し
た. そこで本発明は前記各先願技術に因るレーザ光学系素体
自体では所期の耐レーザ性を得る事が出来るにも拘らず
,該素体を用いてレンズその他の光学系部材を形成した
場合に何故耐レーザ性が低下するのかその原因を見い出
し,該原因に着目して本発明を創作するに至ったもので
ある.即ち木発明は.長時間にわたってエキシマレーザ
光を照射した場合においても透過率の低下や屈折率分布
の変動が生じる事なく酎レーザ性の一層の向上を図った
レーザ光用光学系部材を提供する事を目的とする. 「課題を解決する為の手段」 本発明に至った過程を順を追って説明する,■先ず、木
発明はOH基濃度が少な〈とも100pp■以上好まし
ぐは略300ppm以上含有する高純度合戊石英ガラス
材を出発母材として前記レーザ光学系部材を形成した点
にある事は前記した通りである. けだし前記ガラス組織中のOHTi濃度を増大する事に
より蛍光特性、屈折率、透過率等の耐紫外線特性を向上
させる事は、本発明者が先に第l先願技術において知見
した技術であり,そして更に第2先願技術において前記
石英ガラス組織中に含まれる不純物濃度を高純度化、よ
り具体的には金属元素を50ρρb以下にするとともに
OH基濃度を100ppm以上に設定する事により, 
400nmまでの波長域の紫外線を照射した場合におけ
る酎レーザ性を向上させる事の出来る旨記載されている
.■しかしながら一般のレンズ部材を含めてレーザ光用
光学系部材は、前記母材をそのまま切断研磨若しくはコ
ーテングして所望のレンズを製作するのではなく、前記
母材を一旦加熱処理して内部歪等を除去した後、前記し
た加工手段により所望のレンズを製作するものである為
に、例え前記出発母材側で耐レーザ性を保証しても前記
処理過程中に生じる不具合により完戊部品としてのレー
ザ光用光学系部材が,所望の酎レ゛−ザ性を得る事が出
来ない場合がある. 特に合或石英ガラス材の場合はその合威方法及び該合成
に用いる原料等が多岐に亙る為に、例え同一条件で加熱
処理を行っても形威されるガラス組織が異なってしまい
、面も光学ガラスと異なり石英ガラス材の場合は徐冷点
が1120℃と高温である為に前記加熱処理温度を少な
くとも徐冷点#後の高温に設定して加熱処理を行なわな
ければならず、これらの理由により前記加熱処理に起因
する組戊変化により酎レーザ性を低下させる種々の問題
が生じる事が予想される. ■その第1が酸素欠陥のFW1題である.前記のように
高温で加熱処理を行う場合,その合戊方法及び加熱雰囲
気条件の相違により酸素欠陥が発生若しくは残存し、そ
して本発明者は前記合戊石英ガラスのガラス組織(Si
02 )中に下記■式で示される代表的酸素欠損型欠陥
,あるいは下記■式で示される代表的酸素過剰型欠陥が
存在すると、レーザ光照射により光学的特性の劣化を受
け易い事を突!!トめた.(特願昭83−21381号
参照) そこで本発明の第2の特徴とする所は前記光学系部材が
、そのガラス組織中に酸素欠陥が実質的に存在しない石
英ガラス材である点にある.即ちより具体的には出発母
材に酸素過剰型欠陥が存在する場合は還元性雰囲気で熱
処理する事により,一方出発母材に酸素欠損型欠陥が存
在する場合は酸化雰囲気で熱処理する事により前記酸素
欠陥濃度をいずれも低減させる事が出来、酸素欠陥の実
質的な除去を図る事が出来るものである.そして,酸素
欠陥の存在が何故光学特性に悪影響を及ぼすかその理由
についてはさだかではないが,下記の理由によるものと
推定される.即ちガラス組峰中に,不純物に加えて酸素
欠陥が存在すると、前記ガラス組織を構或する元素間の
結合が、理想的石英ガラスの元素間の結合に比較して弱
くなり、該レーザー光のエネルギーにより結合が切断さ
れやす〈なり、そして石英ガラスの元素間の結合が切断
されることにより構造的変化を起こし,屈折率を変化さ
せるものと推定される.又同様に不純物もしくは酸素欠
陥の存在が前駆体となり、レーザー光照射後各種のカラ
ーセンターを形威し、透過率の低下をもたらし、更に不
純物元素の存在及び前記カラーセンターの形或に伴って
,レーザー照射中の石英ガラスの蛍光棺長と強度が決り
,これにより蛍光が発生し易くなるものと思慮される. 尚木発明における,「実質的に酸素欠陥を存在しない」
とは、Shelby(1138G)法を参考にして前記
ガラス組織中の欠損酸素原子濃度及び過剰酸素原子濃度
を測定した場合その測定値が検出限界以下、具体的には
理想的なガラス組織(Si02)に対し,不足又は過剰
の!*素原子数が,ガラス Ig中おおむね10r1個
以下であるものが良いと推測される.ちなみに酸素過剰
型欠陥の場合過廁の酸素原子濃度10r7個(ガラス1
g当り)は約3ppmに相当し、又これが1019個で
あると約300ppmに相当する. ここでShelb!(1980)法による酸素過剰型欠
陥の過剰酸素濃度の測定は,高温で水素と反応させた時
に生ずるOH基の赤外吸収を測定して定量するものであ
り.S素欠損型欠陥の欠損酸素濃度の測定は、高温で酸
素ガスと反応させた時減少する?.8eV(1113n
m)の吸収ピークを測定して定量するものである. 又,酸素欠損型欠陥の検出は、細野他(1987)によ
る方法,すなわち石英ガラスサンプルにKrFエキシマ
レーザ(248n■)を照射した時発生する4.3eV
 (約290ns)の蛍光を検出することによっても可
能である. 更に、酸素過剰型欠陥の検出は,長澤他(19El8)
による方法、すなわち石英ガラスサンプルの紫外域透過
率を測定し、3.8eV (約325n耐の吸収バンド
の存在を検出することによっても可能である. ■次に加熱処理における第2の問題が、吸蔵本素の脱ガ
ス化の問題である. 即ち前記したように前記加熱処理温度は高温である為に
、該加熱処理中に前記石英ガラス組織中の吸蔵本素が脱
ガス化し,該水素濃度の低下に起因して加熱処理前に所
定レベル以上に維持していた酎レーザ性能が低下してし
まう事が確認された. そこで本発明の11!2の特徴とする所は、塩化水素を
加味した水素ガス雰囲気にて加熱処理を行う事により該
光学系部材中に水素ガスを高濃度で吸蔵させた点、より
具体的には前記光学系部材の真空下での1000℃昇温
時における水素分子放出量が少なくともIX 1020
(molecules/rn’)以上になるように水素
ガスを含有させた点にある.尚前記水素分子放出量の測
定は例えば前記光学系部材40X2QXtlmmに切断
し且つ円面を鏡面仕上げしたサンプルを用意し,該サン
プルをセットした石英チャンバー内を真空雰囲気にした
後、4℃/mtnで1000℃まで昇温させた後、fi
 1000℃にて2hr保持する.その時放出される各
種ガスを四重極型質量分析計に導入してその放出量を測
定すればよい. ■本発明を400n■までの特定波長城のレーザ光に使
用されるレーザ光用光学系部材に限定した理由は、波長
域が400n■以上ではフォトンエネルギーが小さいの
で光学特性の安定性を考慮する必要がない為である. 「実験例」 木発明に至った軽過を具体的な実験例に基づいて説明す
る. 原料四塩化ケイ素を蒸留処理して不純物を除去させた後
テフロンランニグ付ステンレス製容器に貯溜した高純度
四塩化ケイ素を用意し,該高純度の四塩化ケイ素原料を
用いてダイレクト法とCvDスート再溶融合戊法にて,
 3方向rM理フリーでありかつ光使用領域における屈
折率変動幅(Δn)を2XI04に設定した高純度石英
ガラスインゴットを各々複数個合成した.そして前記イ
ンゴットRよりOH基の含有量2>< 5PPI以下、
I5(l ppm(スート法)  400ppm  (
ダイレクト法)のOH基濃度を有するインゴットを選出
した. 次に、前記各0}1基濃度を有するインゴットを雰囲気
加熱炉内の石英ガラスチャンバー内に設置して,第1の
インゴット群(実一l〜2、比−1〜3)においてはア
ルゴンガスで稀釈した酸素ガス雰囲気下で、又第2のイ
ンゴット群(比−0においては水素ガス雰囲気下にて1
000℃前後の温度で加熱処理を行う. 次に、第1のインゴット群の(実−z〜2、比−1)に
ついてはHC文を加味した水素ガスH2雰囲気下にて,
各々約800〜700℃で一定時間保持した後次に約2
00℃の温度以下になるまで一定のプログラムにより徐
冷を行い、その後大気放冷を行った. そして前記加熱処理を行った各インゴットについてアル
カリ金属元素Li,Ha,K,アルカリ土類金属元素M
ggCa及び遷移金属元素Ti .Cr,Fe,Ni 
,Cuノ各元素の含量分析を行ってみるに,いずれもア
ルカリ金属元素が0.05ppm以下、アルカリ士類金
属元素が0.01ppm前後、遷移金属元素が0.01
ppm以下と高純度が維持されていた. そして,このようなインゴットの一部を所望サイズに切
断してをShelby(+980)法に基づいて過剰酸
素濃度及び欠損酸素濃度を、又 前記した測定法に基づ
いて真空下での1000℃昇温時における水素分子放出
量を測定した結果を下一覧表に示す. 次に、擬似光学部材として各インゴットから,40X 
30X tlo mraの所望の寸法に切断しかつ両面
を鏡面仕上げしたエキシマレーザ照射実験用試験片を作
成し,該試験片に対してKrFエキシマーレーf(24
8n■)を用い、パルス当りエネルギー密度100,2
00,400(mJ/crn” @pulse)及び照
射パルス数IX105、 IX 10’ .  IX 
107 (pulse)の組合せから或る照射条件にて
照射を行った. そして、前記照射終了後の各試験片について、干渉計に
て屈折率分布変化、透過率計にてンーラリゼーション、
蛍光測定器にて蛍光強度測定を行い、その結果を下記一
覧表に示す. 下記一覧表の比−1より理解される如く,OH基含有量
がspp■以下の場合は、酸素欠陥が検出されず、且つ
水素ガス放出量がIXI020(厘olecules/
m″)以上であっても酎レーザー性は平均レベル以下で
あり、又比−2,比−3に示す如<OH基含有量が10
0ppm以上で且つ酸素欠陥が検出されない場合であっ
ても水素ガス放出量がI X 102(+ (mole
cu!as/ rrf)以下の場合はやはり耐レーザー
性は平均レベルであり,更に比−4に示す如<OH基含
有量が100pp■以上で且つ水素ガス放出量がl X
 1020 (molecules/ rn”)以上で
あッテも且つ酸素欠陥が検出される場合には,耐レーザ
ー性が悪い事が実証された. 一方、OH基含有量がIQQpp−以上、酸素欠陥が検
出されず,且つ水素ガス放出量がIX1020(iol
ecules/m’)以上の試料の酎レーザー性はきわ
めて高いものであった. かかる実験結果より木発明の効果が円滑に達戊されてい
ることがわかる. 「発明の効果」 以上記載の如く本発明によれば、酸素欠陥の除去ととも
にOR基と吸蔵水素を効果的に高純度のガラス組織中に
混在させる事により,長時間にわたってエキシマレーザ
光を照射した場合においても透過率の低下や屈折率分布
の変動が生じる事なく酎レーザ性が一層向上し得るレー
ザ光用光学系部材を得る事が出来、これにより本発明に
のレーザ光学系部材は,リソグラフィー装置その他の高
集積回路製造装置のみならず,レーザ核融合装置その他
の高出力エキシマレーザーに使用されるレーザ光学系母
材にも十分適用可能である.等の種々の著効を有す.
[Detailed description of the invention] The invention relates to lenses, window members, mirrors, prisms, filters, etalon plates, and other optical systems for laser beams, and in particular specifies wavelengths of approximately 400 nm or less. Related to optical system components for laser beams used in wavelength castles. ``Prior technology'' In recent years, with the miniaturization and high integration of LSIs, for example, phosphorography technology for drawing circuit patterns on wafers has also been drawing submicron units. Although the development of technology is urgent,
Considering the recent steady progress in optical systems, light sources, photoresists, etc., it is presumed that optical lithography will become the mainstream, but one drawback of optical lithography is that the exposure wavelength is large, so the resolution is limited by diffraction. As a solution to this problem, shortening the wavelength of light is being considered. However, when ultraviolet rays of 400 ns or less are used to shorten the wavelength of light, the light transmittance of lenses using conventional optical glass decreases rapidly when the wavelength used is around 385 nm (iiJi). In other words, heat generation occurs due to light absorption, which disturbs the focal position and other characteristics of the lens. For this reason, it is possible to change the lens material from conventional optical glass to quartz glass and to use a laser beam with a narrow spectral width in order to prevent the occurrence of chromatic aberration when using quartz glass. The most complete type of laser is the excimer laser. However, the excimer laser light has extremely high power compared to conventionally used light sources, and κrF(
248ns), XeC (308nm). ArF(
When using a short wavelength laser beam with an oscillation wavelength of about 350 nm or less, such as 193 ns), even if the optical system member for the laser beam is made of quartz glass, if the laser beam is irradiated for a long time, Optical systems such as lenses are damaged, causing a decrease in transmittance, an increase in the absolute refractive index, fluctuations in the refractive index distribution, and fluorescence, which eventually leads to cracks, especially when the energy density is high. .. One of the causes of the decrease in transmittance is said to be due to metal impurities present in the quartz glass, and for this reason, highly purified SiCl4 etc. are used in the optical system instead of using natural quartz as a starting material. using a silicon compound. Forming high-purity synthetic quartz glass while minimizing the contamination of metal elements,
We tried to eliminate the above-mentioned drawbacks by manufacturing lenses for laser beams using the laminated quartz glass as a base material, but we were unable to obtain satisfactory results as an optical system for high-output, short-wavelength laser beams. .. Therefore, the applicant first formed the base material for manufacturing the lenses, etc., in other words, the laser optical system element, from high-purity synthetic quartz glass, and reduced the OH group content in the glass structure to 300PP. The applicant has proposed a laser optical system element set as described above (#Application No. 82-323882, hereinafter referred to as the first technology), and furthermore, the present applicant has proposed a synthetic quartz glass structure for forming the laser optical system element. We are proposing a laser optical system system that can achieve the desired effect even when the OH group content in the glass structure is reduced to 100pp by further reducing the impurity concentration contained therein. ..
(Application filed on May 30, 1997, hereinafter referred to as the second prior art) ``Problem to be solved by the invention'' However, the laser optical system element subject to the above-mentioned OH group content and purity regulations cannot be solved by itself. It is true that laser resistance is improved, but it has been found that the desired effect cannot always be achieved when using this element to form lenses or other optical systems. Therefore, the present invention proposes that although the laser optical system elements themselves according to the prior art can achieve the desired laser resistance, they are used to form lenses and other optical system members. We discovered the reason why laser resistance deteriorates in some cases, and focused on this cause to create the present invention. In other words, the invention of wood. The purpose of the present invention is to provide an optical system member for laser light that further improves the laser performance without causing a decrease in transmittance or fluctuation in refractive index distribution even when irradiated with excimer laser light for a long time. .. ``Means for Solving the Problems'' The process that led to the present invention will be explained step by step.■ First, the invention is based on a high-purity wood containing at least 100 ppm or more, preferably approximately 300 ppm or more. As mentioned above, the laser optical system member is formed using silica glass as the starting material. Improving ultraviolet resistance properties such as fluorescence properties, refractive index, and transmittance by increasing the OHTi concentration in the glass structure is a technique that the present inventors first discovered in the technique of the first prior application. Furthermore, in the second prior art, the impurity concentration contained in the silica glass structure is highly purified, more specifically, the metal element is set to 50 ρρb or less, and the OH group concentration is set to 100 ppm or more.
It is stated that it is possible to improve the lasing properties of chuji when irradiated with ultraviolet rays in the wavelength range up to 400 nm. ■However, optical system members for laser beams, including general lens members, are not made by cutting, polishing, or coating the base material as is to produce the desired lens, but by first heat-treating the base material to eliminate internal distortion. Since the desired lens is manufactured by the above-mentioned processing means after removing the above-mentioned materials, even if laser resistance is guaranteed on the starting base material side, defects that occur during the processing process may cause the finished part to fail. There are cases where the optical system components for laser light cannot achieve the desired laser properties. In particular, in the case of fused silica glass materials, the fusion methods and raw materials used for the synthesis vary widely, so even if heat treatment is performed under the same conditions, the formed glass structure will differ, and the surface will also differ. Unlike optical glass, the annealing point of quartz glass material is as high as 1120°C, so the heat treatment temperature must be set at least to a high temperature after the annealing point #. For this reason, it is expected that the structural changes caused by the heat treatment described above will cause various problems that will reduce the laser properties of the chu. ■The first is the FW1 problem of oxygen defects. When heat treatment is performed at a high temperature as described above, oxygen defects are generated or remain due to differences in the amalgamating method and heating atmosphere conditions, and the present inventors believe that the glass structure (Si
If a typical oxygen-deficient type defect shown by the following formula (■) or a typical oxygen-excess type defect shown by the following formula (2) is present in (02), the optical properties are easily deteriorated by laser beam irradiation! ! I lost it. (See Japanese Patent Application No. 83-21381.) The second feature of the present invention is that the optical system member is made of quartz glass material with substantially no oxygen defects in its glass structure. More specifically, if the starting base material contains oxygen-excess defects, heat treatment is performed in a reducing atmosphere, while if oxygen-deficient defects are present in the starting base material, heat treatment is performed in an oxidizing atmosphere. In both cases, the concentration of oxygen defects can be reduced, and oxygen defects can be substantially eliminated. The reason why the presence of oxygen defects has a negative effect on optical properties is not clear, but it is presumed to be due to the following reasons. That is, if oxygen defects exist in addition to impurities in the glass structure, the bonds between the elements that make up the glass structure become weaker than the bonds between the elements of ideal silica glass, and the laser beam Bonds are easily broken by energy, and it is presumed that the breaking of bonds between elements in silica glass causes structural changes and changes in the refractive index. Similarly, the presence of impurities or oxygen defects acts as a precursor and forms various color centers after laser light irradiation, resulting in a decrease in transmittance. It is thought that the fluorescent coffin length and intensity of the quartz glass during laser irradiation are determined, and this makes it easier for fluorescence to occur. "Substantially no oxygen defects" in Naoki's invention
means that when the concentration of defective oxygen atoms and the concentration of excess oxygen atoms in the glass structure are measured with reference to the Shelby (1138G) method, the measured values are below the detection limit, specifically for the ideal glass structure (Si02). In contrast, there is a shortage or an excess! *It is estimated that the number of elementary atoms in the glass Ig is approximately 10r1 or less. By the way, in the case of oxygen-excess type defects, the excessive oxygen atom concentration is 10r7 (glass 1
(per g) corresponds to about 3 ppm, and if it is 1019 pieces, it corresponds to about 300 ppm. Shelb here! (1980) method, the excess oxygen concentration of oxygen-excess defects is determined by measuring the infrared absorption of OH groups generated when reacting with hydrogen at high temperatures. Does the measurement of the missing oxygen concentration of S element-defective defects decrease when reacted with oxygen gas at high temperatures? .. 8eV (1113n
m) is quantified by measuring the absorption peak. Oxygen deficiency defects can also be detected using the method described by Hosono et al.
This can also be done by detecting fluorescence (approximately 290 ns). Furthermore, the detection of oxygen-excess defects was performed by Nagasawa et al. (19El8).
This is also possible by measuring the ultraviolet transmittance of a quartz glass sample and detecting the presence of an absorption band with a resistance of 3.8 eV (approximately 325 n). Next, the second problem in heat treatment is The problem is the degassing of the absorbed hydrogen atoms. That is, as mentioned above, since the heat treatment temperature is high, the absorbed hydrogen atoms in the quartz glass structure are degassed during the heat treatment, and the hydrogen concentration decreases. It was confirmed that the performance of the chu laser, which had been maintained at a predetermined level or higher before the heat treatment, deteriorated due to a decrease in By performing heat treatment in a hydrogen gas atmosphere, hydrogen gas is occluded at a high concentration in the optical system member. Molecular release amount is at least IX 1020
(molecules/rn') or more. The amount of released hydrogen molecules can be measured by preparing a sample of the optical system member cut into 40 x 2 Q After raising the temperature to 1000℃, fi
Hold at 1000℃ for 2 hours. The various gases released at that time can be introduced into a quadrupole mass spectrometer and the amount released can be measured. ■The reason why the present invention is limited to optical system members for laser beams used for laser beams with specific wavelengths up to 400n■ is to take into consideration the stability of optical characteristics since the photon energy is small in the wavelength range of 400n■ or more. This is because there is no need. ``Experimental Example'' The light accident that led to the invention of wood will be explained based on a specific experimental example. After distilling the raw material silicon tetrachloride to remove impurities, we prepare high-purity silicon tetrachloride stored in a stainless steel container with a Teflon run, and use the high-purity silicon tetrachloride raw material to perform the direct method and CvD soot. By remelting fusion method,
A plurality of high-purity quartz glass ingots were synthesized, each of which was free from RMR in three directions and had a refractive index variation range (Δn) of 2XI04 in the optical use region. Then, from the ingot R, the content of OH groups is 2><5 PPI or less,
I5 (l ppm (soot method) 400 ppm (
An ingot with an OH group concentration of 100% (direct method) was selected. Next, the above-mentioned ingots each having a concentration of 0}1 group were placed in a quartz glass chamber in an atmosphere heating furnace, and the first group of ingots (realistic 1~2, ratio -1~3) was heated with argon gas. In an oxygen gas atmosphere diluted with
Heat treatment is performed at a temperature of around 000℃. Next, for the first ingot group (actual -z ~ 2, ratio -1), in a hydrogen gas H2 atmosphere with HC text added,
After holding each for a certain period of time at approximately 800 to 700℃,
Slow cooling was performed according to a certain program until the temperature reached 00°C or less, and then air cooling was performed. Then, for each ingot subjected to the heat treatment, alkali metal elements Li, Ha, K, alkaline earth metal elements M
ggCa and transition metal element Ti. Cr, Fe, Ni
When we analyzed the content of each element in Cu, we found that the alkali metal elements were 0.05 ppm or less, the alkali metal elements were around 0.01 ppm, and the transition metal elements were 0.01 ppm.
High purity was maintained at less than ppm. Then, a part of such an ingot was cut into a desired size, and the excess oxygen concentration and deficient oxygen concentration were measured based on the Shelby (+980) method, and the temperature was raised to 1000°C under vacuum based on the measurement method described above. The table below shows the results of measuring the amount of hydrogen molecules released at different times. Next, as a pseudo optical member, 40X
A test piece for excimer laser irradiation experiments was prepared by cutting it into a desired size of 30X tlo mra and mirror-finishing both sides.
8n■), and the energy density per pulse is 100.2
00,400 (mJ/crn"@pulse) and number of irradiation pulses IX105, IX 10'.IX
Irradiation was performed under certain irradiation conditions from a combination of 107 pulses. After the irradiation, each test piece was examined for changes in refractive index distribution using an interferometer, and for normalization using a transmittance meter.
Measure the fluorescence intensity using a fluorometer, and the results are shown in the table below. As can be understood from the ratio -1 in the table below, when the OH group content is spp■ or less, no oxygen defects are detected and the amount of hydrogen gas released is less than IXI020 (rinolecules/
m″) or more, the chu laser property is below the average level, and as shown in ratio-2 and ratio-3, when the OH group content is <10
Even if the concentration is 0 ppm or more and no oxygen defects are detected, the amount of hydrogen gas released is I x 102 (+ (mole
Cu! as/rrf), the laser resistance is still at the average level, and as shown in ratio-4, the OH group content is 100 pp or more and the amount of hydrogen gas released is lX
It was demonstrated that when the OH group content was more than 1020 (molecules/rn") and oxygen defects were detected, the laser resistance was poor. On the other hand, when the OH group content was IQQpp- or more, oxygen defects were detected. and the amount of hydrogen gas released is IX1020 (iol
The laser properties of the samples with a diameter of 1.2 m/m' or more were extremely high. These experimental results show that the effects of the wood invention are smoothly achieved. "Effects of the Invention" As described above, according to the present invention, by removing oxygen defects and effectively mixing OR groups and occluded hydrogen in a high-purity glass structure, excimer laser light can be irradiated for a long period of time. It is possible to obtain an optical system member for a laser beam that can further improve the laser performance without causing a decrease in transmittance or a change in the refractive index distribution even in the case of lithography. It is fully applicable not only to equipment and other highly integrated circuit manufacturing equipment, but also to laser optical system base materials used in laser fusion equipment and other high-power excimer lasers. It has various effects such as.

Claims (1)

【特許請求の範囲】 1)略400nm以下の紫外線波長域のレーザ光に使用
されるレーザ光用光学系部材において、該光学系部材を
、OH基濃度を少なくとも100ppm以上含有する高
純度合成石英ガラス材で形成するとともに、該光学系部
材が、そのガラス組織中に酸素欠陥が実質的に存在せず
且つ水素ガスを含有させた石英ガラス材であることを特
徴とするレーザ光用光学系部材 2)前記石英ガラス材中における水素ガス含有量を、該
ガラス材の真空下での1000℃昇温時における水素分
子放出量が少なくとも1×10^2^0(molecu
les/m^2)以上になるように設定した事を特徴と
する請求項1)記載のレーザ光用光学系部材
[Scope of Claims] 1) In a laser beam optical system member used for laser light in the ultraviolet wavelength range of about 400 nm or less, the optical system member is made of high-purity synthetic quartz glass containing an OH group concentration of at least 100 ppm or more. An optical system member 2 for laser light, characterized in that the optical system member is made of a quartz glass material substantially free of oxygen defects in its glass structure and containing hydrogen gas. ) The hydrogen gas content in the quartz glass material is set such that the amount of hydrogen molecules released when the glass material is heated to 1000°C under vacuum is at least 1×10^2^0 (molecular
The optical system member for laser light according to claim 1), characterized in that the optical system member is set to be equal to or more than les/m^2).
JP1232982A 1989-09-11 1989-09-11 Optical components for laser light Expired - Lifetime JPH0624997B2 (en)

Priority Applications (1)

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JP1232982A JPH0624997B2 (en) 1989-09-11 1989-09-11 Optical components for laser light

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JP1232982A JPH0624997B2 (en) 1989-09-11 1989-09-11 Optical components for laser light

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JP01154620 Division 1989-06-09 1989-06-19

Related Child Applications (1)

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JP12044895A Division JP2652847B2 (en) 1995-04-24 1995-04-24 Optical system member for laser beam and optical system member for lithographic apparatus

Publications (2)

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JPH0323236A true JPH0323236A (en) 1991-01-31
JPH0624997B2 JPH0624997B2 (en) 1994-04-06

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03101282A (en) * 1989-06-19 1991-04-26 Shinetsu Sekiei Kk Optical system components for laser beams
JPH05330848A (en) * 1992-02-28 1993-12-14 Heraeus Quarzglas Gmbh Element for transmitting high energy light beam and use of said element
JPH08290935A (en) * 1995-04-14 1996-11-05 Corning Inc Highly purified molten silica glass member with resistance to optical damage and its preparation
EP0879799A3 (en) * 1997-05-16 1999-07-21 Sumitomo Electric Industries, Ltd. Silica glass article and manufacturing process therefor
US6333283B1 (en) 1997-05-16 2001-12-25 Sumitomo Electric Industries, Ltd. Silica glass article and manufacturing process therefor
DE10308466A1 (en) * 2003-02-21 2004-09-02 Carl Zeiss Smt Ag Producing quartz glass material used in microlithography-projection devices comprises minimizing the amount of peroxide defects in the material
JP2009011995A (en) * 2007-07-09 2009-01-22 Shinetsu Quartz Prod Co Ltd FIBER PHOTOCATALYST BODY, PURIFYING APPARATUS AND METHOD FOR PRODUCING FIBER PHOTOCATALYST BODY

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6275604A (en) * 1985-09-30 1987-04-07 Mitsubishi Metal Corp Light transmitting line having resistance to radiant rays
JPH01201664A (en) * 1988-02-08 1989-08-14 Nippon Sekiei Glass Kk Method for reforming synthetic quartz glass
JPH0280343A (en) * 1988-09-14 1990-03-20 Shin Etsu Chem Co Ltd UV-resistant synthetic quartz glass and its manufacturing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6275604A (en) * 1985-09-30 1987-04-07 Mitsubishi Metal Corp Light transmitting line having resistance to radiant rays
JPH01201664A (en) * 1988-02-08 1989-08-14 Nippon Sekiei Glass Kk Method for reforming synthetic quartz glass
JPH0280343A (en) * 1988-09-14 1990-03-20 Shin Etsu Chem Co Ltd UV-resistant synthetic quartz glass and its manufacturing method

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03101282A (en) * 1989-06-19 1991-04-26 Shinetsu Sekiei Kk Optical system components for laser beams
JPH05330848A (en) * 1992-02-28 1993-12-14 Heraeus Quarzglas Gmbh Element for transmitting high energy light beam and use of said element
JPH08290935A (en) * 1995-04-14 1996-11-05 Corning Inc Highly purified molten silica glass member with resistance to optical damage and its preparation
EP0879799A3 (en) * 1997-05-16 1999-07-21 Sumitomo Electric Industries, Ltd. Silica glass article and manufacturing process therefor
US5983673A (en) * 1997-05-16 1999-11-16 Sumitomo Electric Industries, Ltd. Silica glass article and manufacturing process therefor
US6333283B1 (en) 1997-05-16 2001-12-25 Sumitomo Electric Industries, Ltd. Silica glass article and manufacturing process therefor
US6709997B2 (en) 1997-05-16 2004-03-23 Sumitomo Electric Industries, Ltd. Silica glass article and manufacturing process therefor
DE10308466A1 (en) * 2003-02-21 2004-09-02 Carl Zeiss Smt Ag Producing quartz glass material used in microlithography-projection devices comprises minimizing the amount of peroxide defects in the material
JP2009011995A (en) * 2007-07-09 2009-01-22 Shinetsu Quartz Prod Co Ltd FIBER PHOTOCATALYST BODY, PURIFYING APPARATUS AND METHOD FOR PRODUCING FIBER PHOTOCATALYST BODY

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