JPH03236226A - Manufacturing method of semiconductor device - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of manufacturing a semiconductor device having an ohmic contact portion.

[Prior Art] In conventional semiconductor device manufacturing, the formation of electrical contacts, especially for semiconductor materials such as silicon and polysilicon, is an important process that determines yield, reliability, semiconductor characteristics, etc. It is. When a metal layer is formed on silicon, a contact potential difference occurs between the two based on the difference in work function. -The work function of AI used as wiring electrodes for boat fishing is negative compared to silicon, resulting in an ohmic junction.

However, the silicon surface always has a thin oxide film (50 to 100
In reality, simply bringing A1 into contact with silicon does not provide ohmic characteristics.

As a method for solving this problem, JP-A-60-1869 proposes a method in which a long-time high-temperature hydrogen heat treatment is performed before the electrode wiring is formed, and a short-time heat treatment is performed after the electrode wiring is formed. That is, in this method, as shown in FIG. 2, polycrystalline silicon is deposited [FIG. 2(b)], patterned [FIG.
Formation of gate 4 and implantation of ions 5 [Fig. 2 (e)], Formation of glabella insulating film 6 and long-term high temperature hydrogen heat treatment [Fig. 2 (f)], Contact hole 8
Electrode formation is carried out through the following steps: formation of Al electrode IO [FIG. 2(g)].

[Problems to be Solved by the Invention] However, the above method has problems in terms of workability because it requires two heat treatment steps before and after forming the electrode wiring, and furthermore, it has problems in terms of safety due to the long-time high-temperature hydrogen heat treatment. There was a problem.

The present invention aims to solve the above-mentioned problems, and its purpose is to remove the oxide film and moisture on the silicon surface of the contact part using activated Ar gas in a good manner in terms of workability and safety. The purpose is to form ohmic electrodes in the electrode wiring process.

[Means for Solving the Problems] The present invention provides a semiconductor device in which, in a semiconductor device manufacturing process, after forming a contact hole, a contact portion is cleaned with activated Ar gas, and then a metal electrode wiring is formed. Regarding the manufacturing method.

[Function] After forming the contact hole, by implanting the surface of the semiconductor substrate with an Ar ion implanter, the oxide film and moisture on the silicon surface exposed in the contact part can be removed.
It becomes possible to form ohmic electrodes in the subsequent metal electrode wiring process.

[Example] Next, the present invention will be explained by giving examples.

Embodiment FIG. 1 shows the manufacturing process of a thin film transistor which is an embodiment of the present invention. A polycrystalline silicon thin film 2 with a film thickness of about 1000 to 5000 layers is formed on a transparent insulating substrate 1 by low pressure CVD method.
was deposited [Fig. 1(b)]. Next, after forming a pattern on the polycrystalline silicon thin film 2 [FIG. 1(c)],
A gate insulating film 3 having a thickness of approximately 500 to 1,000 layers was laminated by thermal oxidation or CVD method [FIG. 1(d)].

Thereafter, polycrystalline silicon was deposited to a thickness of about 2,000 to 4,000 layers, and the gate 4 was formed by patterning. Furthermore, if necessary, ions 5 were implanted to dope B' or P' at 2 to 4 x 10''/cm2 to form P-type and N-type regions, and then they were activated by treatment at 02 at 900°C for 30 minutes. [Figure 1(e)]. Next, the film thickness is 1000~5.
After forming the interlayer insulating film 6 of 1,000 yen, hydrogen plasma treatment 7 was performed to fill the defects in the polycrystalline silicon with hydrogen atoms [FIG. 1(f)]. Next, a contact hole 8 was formed, and the oxide film was removed by etching the exposed silicon surface in the contact area with activated Ar gas, and moisture in the contact area was removed [FIG. 1(g)]. Here, the cleaning treatment with activated Ar gas is performed, for example, by hitting the silicon surface with Ar'' energy in the range of 10 to 20 keys using implantation.Finally, pattern wiring of the A1 electrode IO is performed in the contact hole 8. A thin film transistor was manufactured [FIG. 1(h)]. The contact resistance of the obtained thin film transistor was a stable and low value, and exhibited ohmic characteristics.

[Effect of the invention] As is clear from the above explanation, according to the present invention, workability,
The oxide film on the silicon surface of the contact portion can be removed in a good manner from the standpoint of safety, and a semiconductor device having ohmic characteristics with a stable and low contact resistance can be manufactured.

[Brief explanation of drawings]

FIG. 1 is a sectional view showing the manufacturing process of a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a sectional view showing the manufacturing process of a conventional semiconductor device. 1... Transparent insulating substrate, 2... Silicon thin film, 3...
...Gate insulating film, 4...Gate. 5...Ion, 6...Interlayer insulating film, 7...Hydrogen, 8...Contact hole, 9...Ar gas,
10...Al electrode.

Claims (1)

[Claims] In the semiconductor device manufacturing process, after forming the contact hole, the contact part is cleaned with activated Ar gas,
A method of manufacturing a semiconductor device, the method comprising: thereafter forming a metal electrode wiring.