JPH03240209A - Magnetic alloy - Google Patents
Magnetic alloyInfo
- Publication number
- JPH03240209A JPH03240209A JP2037822A JP3782290A JPH03240209A JP H03240209 A JPH03240209 A JP H03240209A JP 2037822 A JP2037822 A JP 2037822A JP 3782290 A JP3782290 A JP 3782290A JP H03240209 A JPH03240209 A JP H03240209A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- magnetic alloy
- alloy
- atomic
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910001004 magnetic alloy Inorganic materials 0.000 title claims abstract description 30
- 230000000737 periodic effect Effects 0.000 claims abstract description 7
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 6
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 6
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229910052762 osmium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052702 rhenium Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000000203 mixture Substances 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- 229920006395 saturated elastomer Polymers 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 23
- 229910045601 alloy Inorganic materials 0.000 description 14
- 239000000956 alloy Substances 0.000 description 14
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 13
- 229910052757 nitrogen Inorganic materials 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 7
- 238000005260 corrosion Methods 0.000 description 7
- 230000007797 corrosion Effects 0.000 description 7
- 230000004907 flux Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 230000035699 permeability Effects 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910001337 iron nitride Inorganic materials 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- 229910000702 sendust Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 239000003353 gold alloy Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004453 electron probe microanalysis Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Soft Magnetic Materials (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、高密度磁気記録用の磁気ヘッドに適する磁性
合金に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a magnetic alloy suitable for a magnetic head for high-density magnetic recording.
（従来の技術）
近年、磁気記録の高密度化や広帯域化の必要性が高まり
、磁気記録媒体に高い抗磁力を有する磁性材料を使用し
て記録トラック幅を狭くすることにより、高密度磁気記
録再生を実現している。(Prior art) In recent years, the need for higher density and wider band magnetic recording has increased, and high-density magnetic recording has been achieved by narrowing the recording track width by using magnetic materials with high coercive force in magnetic recording media. Achieving regeneration.
そして、この高い抗磁力をもつ磁気記録媒体に記録再生
するするための磁気ヘッド材料として、飽和磁束密度Ｂ
ｓの高い磁性合金か必要とされており、センダスト合金
やＣｏ−Ｚｒ系非晶質合金等をコアの一部または全部に
使用した磁気ヘッドか提案されている。The saturation magnetic flux density B
There is a need for magnetic alloys with high s, and magnetic heads using Sendust alloys, Co--Zr amorphous alloys, etc. for part or all of the core have been proposed.
然しなから、磁気記録媒体の高抗磁力化か一段と進み、
磁気記録媒体の抗磁力か２００００ ｅ以上になるとセ
ンダスト合金やＣｏ−Ｚｒ系非晶質合金を使用した磁気
ヘッドでは良好な磁気記録再生が困難になった。又、磁
気記録媒体の長平方向ではなく、厚さ方向に磁化して記
録する垂直磁化記録方式も提案されているが、この垂直
磁化記録方式を良好に行うには、磁気ヘッドの主磁極の
先端部の厚さを０．５μｍ以下にする必要があり、比較
的抗磁力の低い磁気記録媒体に記録するにも、高い飽和
磁束密度を持つ磁気ヘッド用磁性合金が必要になる。However, progress has been made in increasing the coercive force of magnetic recording media.
When the coercive force of the magnetic recording medium exceeds 20,000 e, it becomes difficult to perform good magnetic recording and reproduction with magnetic heads using Sendust alloys or Co--Zr amorphous alloys. Also, a perpendicular magnetization recording method has been proposed in which the magnetic recording medium is magnetized in the thickness direction rather than in the longitudinal direction, but in order to perform this perpendicular magnetization recording method effectively, it is necessary to The thickness of the magnetic head must be 0.5 μm or less, and a magnetic alloy for a magnetic head with a high saturation magnetic flux density is required even for recording on a magnetic recording medium with relatively low coercive force.
そして、センダスト合金やＣ０−Ｚｒ系非晶質合金より
も飽和磁束密度の高い磁性合金として、窒化鉄やＦｅ−
Ｓｉ系合金等の鉄を主成分とした磁性合金が知られてい
る。Iron nitride and Fe-
Magnetic alloys containing iron as a main component, such as Si-based alloys, are known.
（発明が解決しようとする課題）
ところが、従来より知られている、これらの高Ｂｓ磁性
合金は保磁力Ｈｃが大きく、そのままでは磁気ヘッドの
材料としては不十分であるのでセンダスト合金やパーマ
ロイ等の保磁力の小さい磁性材料か、或いは５ｉｎ２等
の非磁性材料を中間層とした多層構造の磁気ヘッドが提
案されている。(Problem to be solved by the invention) However, these conventionally known high Bs magnetic alloys have a large coercive force Hc and are not sufficient as materials for magnetic heads as they are, so sendust alloys, permalloy, etc. A multilayer magnetic head has been proposed in which the intermediate layer is made of a magnetic material with a low coercive force or a non-magnetic material such as 5in2.
然しなから、多層構造にするには工数やコストがかかり
、信頼性を保つのも難しいという問題点があった。特に
、数μｍ以上の膜厚にする為には場合によっては１００
層以上の多層構造にする必要があり、使用範囲も限られ
ていた。However, creating a multilayer structure requires a lot of man-hours and costs, and it is difficult to maintain reliability. In particular, in order to obtain a film thickness of several μm or more, it may be necessary to
It required a multilayer structure with more than one layer, and its range of use was also limited.
この問題点を解決するために、本発明穴等はＦｅＮ−０
合金によって、単層で高Ｂｓ・低Ｈｃの磁性合金か得ら
れることを提案したが、熱安定性の面から、ガラスモー
ルド工程には適さないという問題があった。In order to solve this problem, the holes etc. of the present invention are made of FeN-0
Although it was proposed that a single layer magnetic alloy with high Bs and low Hc could be obtained by using an alloy, there was a problem in that it was not suitable for the glass molding process from the viewpoint of thermal stability.
そこで本発明は多層構造にしなくても高飽和磁束密度を
持ち、保磁力が小さく、熱安定性に優れた磁性合金を提
供することを目的とする。Therefore, an object of the present invention is to provide a magnetic alloy that has a high saturation magnetic flux density without having a multilayer structure, has a small coercive force, and has excellent thermal stability.
（課題を解決するための手段）
本発明は上記の課題を解決するためになされたものであ
り、Ｆ ｅ ｖ Ｎｗ ＭＸ ＫＹなる組成式で表され
、ｖ、ｗ、ｘＳｙて示される原子％が１≦Ｗ≦１０
０＜ｘ＜１０
０＜ｙ＜１０
１≦ｗ≦ｉ。(Means for Solving the Problems) The present invention has been made to solve the above problems, and is represented by the composition formula F e v Nw MX KY, where the atomic percentages shown as v, w, and xSy are 1≦W≦10 0<x<10 0<y<10 1≦w≦i.
ｖ ＋ｗ＋ ｘ ＋ ｙ ＝ＬＯＯ
なる関係を有する磁性合金（但しＭは周期律表ＩＩＩｂ
族の中の少なくとも１種類以上の元素であり、ＫはＩＩ
Ｉｂ族の中の少なくとも１種類以上の元素である）また
は、Ｆ ｅ ｖ ＮＷ ＭＸ ＫＹ Ｌ ｚなる組成式
で表され、ｖ、ｗ、ｘ、ｙ、ｚで示される原子％が
１ ≦ Ｗ ≦ １０
０＜ｘ＜１０
Ｑ＜ｙ＜１０
０．５ ≦ ｘ＋ｙ ≦１０
０．３．ｉ；ｚ５１０
ｖ ＋ｗ＋ ｘ ＋ ｙ ＋ ｚ ！＋
１００なる関係を有する磁性合金（但しＭは周期律表■
ｂ族の中の少なくとも１種類以上の元素、Ｋは周期律表
ｒＶｂ族の中の少なくとも１種類以上の元素、ＫはＴｉ
、Ｖ、Ｃｒ、Ｃｏ、Ｎｉ、Ｃｕ。v + w + x + y = LOO
At least one element in the group, K is II
or at least one type of element in Group Ib), or it is represented by the composition formula F e v NW MX KY L z, and the atomic % represented by v, w, x, y, and z is 1 ≦ W ≦ 10 0<x<10 Q<y<10 0.5 ≦ x+y ≦10 0.3. i; z510 v +w+ x + y + z! +
A magnetic alloy with a relationship of 100 (where M is the periodic table ■
At least one element in group b, K is at least one element in group rVb of the periodic table, K is Ti
, V, Cr, Co, Ni, Cu.
Ｙ、Ｚｒ、Ｎｂ、Ｍｏ、Ｒｕ、Ｒｈ、Ｐｄ、Ａｇ。Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag.
Ｓｂ、Ｈｆ、Ｔａ、Ｗ、Ｒｅ、Ｏｓ、Ｉ ｒ、Ｐｔ。Sb, Hf, Ta, W, Re, Os, Ir, Pt.
Ａｕなる群の中から選ばれた少なくとも１種類以上の元
素である）をそれぞれ提供するものである。At least one element selected from the group Au) is provided.
（実施例）
本発明になる磁性合金の製造装置の一実施例を第１図に
示す。(Example) An example of the magnetic alloy manufacturing apparatus according to the present invention is shown in FIG.
一対のターゲット５．５は鉄（Ｆ ｅ）とＡＩ。A pair of targets 5.5 are iron (F e) and AI.
Ｓｉ等の合金ターゲットか、或いは適当な凹部を設けた
純鉄のターゲットの凹部にチップ状のＡｌ８１等をはめ
込んだ複合ターゲラＩ・である。このターゲット５．５
はターゲットホルダ９によって支えられており、このタ
ーゲット５とターゲットホルダ９には、直流電源１３よ
りマイナス電位が印加され、更にこのターゲットホルダ
９の周囲にはシールド４が取り付けである。又、このタ
ーゲットホルダ９の内部には、両ターゲット５．５間ニ
フラズマ１４を集束するための磁石６．６か挿入され、
かつターゲット５の表面の加熱を防ぐために冷却水８が
流入している。This is a composite targeter I, in which a chip-shaped Al81 or the like is fitted into the recess of an alloy target such as Si or a pure iron target provided with an appropriate recess. This target 5.5
is supported by a target holder 9, a negative potential is applied to the target 5 and the target holder 9 from a DC power supply 13, and a shield 4 is attached around the target holder 9. Also, a magnet 6.6 for focusing the Nifrasma 14 between the two targets 5.5 is inserted inside the target holder 9.
In addition, cooling water 8 flows in to prevent the surface of the target 5 from being heated.
そして、接地された真空槽１５の左右に、２個のターゲ
ットホルダ９が絶縁体７によって絶縁されて設けられて
いる。Two target holders 9 are provided on the left and right sides of the grounded vacuum chamber 15 and are insulated by an insulator 7.
又、この真空槽１５の上部より、窒素（Ｎ２）アルゴン
（Ａｒ）がそれぞれ流量計１．２により、所定の流量に
調節されて導入されている。Further, nitrogen (N2) and argon (Ar) are introduced from the upper part of the vacuum chamber 15, each being adjusted to a predetermined flow rate by a flow meter 1.2.
なお、アルゴンはターゲット５をスパッタすると同時に
成膜する磁性合金膜中の窒素の量を調節するためのもの
である。Note that argon is used to adjust the amount of nitrogen in the magnetic alloy film formed at the same time as the target 5 is sputtered.
そして、真空槽１５の下部には基板ホルダ１２上に基板
１１が置かれ、不純物を防くためのシャッタ１０が基板
１１を覆っている。A substrate 11 is placed on a substrate holder 12 at the bottom of the vacuum chamber 15, and a shutter 10 for preventing impurities covers the substrate 11.
このようなスパッタ装置において、直流電源１３により
、左右のターゲットホルダリに支えられたターゲット５
．５の間にプラズマ１４を発生させると、ターゲット５
はマイナス電位であるので、プラズマ１４中のアルゴン
イオン（Ａｒ１）かターゲッット５に衝突し、ターゲッ
ト５の鉄原子及びＡｌ５Ｓｉ等の原子か飛び出す。In such a sputtering apparatus, the target 5 supported by the left and right target holders is powered by the DC power supply 13.
．． When the plasma 14 is generated between 5 and 5, the target 5
Since is at a negative potential, argon ions (Ar1) in the plasma 14 collide with the target 5, and atoms such as iron atoms and Al5Si of the target 5 fly out.
そして、ターゲット５から飛び出した鉄とＡ１、Ｓｔ等
の原子と、プラズマ中の窒素の原子または分子とが結合
して、基板１１の上に成長していく。Then, atoms of iron, A1, St, etc. ejected from the target 5 combine with nitrogen atoms or molecules in the plasma, and grow on the substrate 11.
なお、スパッタ開始後の数分間はシャッタ１０を閉じて
基板１１を覆うことにより、ターゲット５の表面の不純
物が基板１１の上に付かないようにし、その後でシャッ
タ１０を開けるようにする。Note that the shutter 10 is closed to cover the substrate 11 for several minutes after the start of sputtering to prevent impurities on the surface of the target 5 from adhering to the substrate 11, and then the shutter 10 is opened.
そして、流量計１．２により窒素及びアルゴンの導入量
を調節することにより、所望の窒素を含んたＦ ｅ ｖ
ＮＷ ＭＸ ＫＹ金合金たは、ＦｅｖＮｗＭｘＫ、Ｌ
２合金を得ることができる。Then, by adjusting the amount of nitrogen and argon introduced using the flowmeter 1.2, F e v containing the desired nitrogen is adjusted.
NW MX KY gold alloy or FevNwMxK, L
2 alloys can be obtained.
この様にして得たＦ ｅ ｖ Ｎｗ ＭＸ ＫＹ金合金
窒素及びＡＩ、Ｓｉ等の元素の含有量と飽和磁束密度（
Ｂｓ）保磁力（Ｈｃ）との関係を表１に示す。The content of elements such as nitrogen, AI, and Si in the F e v Nw MX KY gold alloy obtained in this way and the saturation magnetic flux density (
Bs) The relationship with coercive force (Hc) is shown in Table 1.
表 １
表１は窒素、Ａ１、Ｓｉ等の含有量と飽和磁束密度（Ｂ
ｓ）、保磁力（Ｈｃ）との関係を示すものであり、含有
量はＥＳＣＡ（Ｘ線光電子分光分析法） 、ＥＰＭＡ
（Ｘ線マイクロアナライザ峡）等による定量分析で原子
％で表しているが、±２０％程度の誤差が見込まれる。Table 1 Table 1 shows the contents of nitrogen, A1, Si, etc. and the saturation magnetic flux density (B
s), shows the relationship with coercive force (Hc), and the content is ESCA (X-ray photoelectron spectroscopy), EPMA
Although it is expressed in atomic percent by quantitative analysis using an X-ray microanalyzer (X-ray microanalyzer), etc., an error of about ±20% is expected.
保磁力は真空中での熱処理を行った時の値であり、熱処
理温度はここでは３００ ’ ｃである。この内、試料
番号１はＦｅに窒素のみを含有させた時の結果てあり、
試料番号２はＦｅにＡ１のみを含有させた時の結果であ
る。試料番号３〜８は本発明の磁性合金である。The coercive force is the value when heat treatment is performed in vacuum, and the heat treatment temperature is 300'C here. Among these, sample number 1 is the result when Fe contains only nitrogen,
Sample number 2 is the result when Fe contains only A1. Sample numbers 3 to 8 are magnetic alloys of the present invention.
窒素の含有量が１原子％未満であると、顕著な窒素の効
果が見られずＨｅはほとんど低下しない。When the nitrogen content is less than 1 atomic %, no significant effect of nitrogen is observed and He hardly decreases.
また、図４に示したように窒素の含有量が（０原子％以
下であると、Ｂｓは１５ｋ Ｇ以上となる。従って、窒
素の含有量が１〜１０原子％である時、高Ｂｓで低Ｈｃ
の磁性合金が得られる。In addition, as shown in Figure 4, when the nitrogen content is (0 atomic % or less), Bs becomes 15 kG or more. Therefore, when the nitrogen content is 1 to 10 atomic %, high Bs Low Hc
A magnetic alloy is obtained.
図２には本発明になる磁性合金と従来例である窒化鉄（
ＦｅＮ）合金の、熱処理温度による保磁力（Ｈｃ）の変
化を示す。窒化鉄は熱処理温度３００° Ｃの時は比較
的Ｈｅが低いが３００″Ｃ以上にすると急激にＨｃか堆
大する。これに対し本発明になる磁性合金は、Ｈｃか小
さく熱安定性にも優れていることか解る。ここで、Ａ１
．．８１等の合計の含有量が０５原子？６未満であると
、低Ｈｃ化と熱安定性の向上に対する顕著な効果は見ら
れず、ｌＯ原子％を越えるとＢｓが１５ｋ Ｇ以上の磁
性合金が得られなくなる。従って、Ａ１、Ｓｉ等の合計
の含有量が０５〜１０原子％の時、高Ｂｓ・低Ｈｅて熱
安定性にも優れた磁性合金を得ることができる。Figure 2 shows the magnetic alloy of the present invention and the conventional example of iron nitride (
2 shows changes in coercive force (Hc) of FeN) alloys depending on heat treatment temperature. Iron nitride has a relatively low He when the heat treatment temperature is 300°C, but when the heat treatment temperature exceeds 300°C, the Hc rapidly increases.On the other hand, the magnetic alloy of the present invention has a small Hc and low thermal stability. I understand that it is excellent.Here, A1
．． ．． Is the total content of 81 etc. 05 atoms? If it is less than 6, there will be no noticeable effect on lowering Hc and improving thermal stability, and if it exceeds 10 atomic %, it will be impossible to obtain a magnetic alloy with Bs of 15 kG or more. Therefore, when the total content of A1, Si, etc. is 05 to 10 atomic %, a magnetic alloy with high Bs, low He, and excellent thermal stability can be obtained.
また、図３には膜厚を２μｍとした時の本発明になる磁
性合金の透磁率μと周波数の関係を示す。Further, FIG. 3 shows the relationship between the magnetic permeability μ and frequency of the magnetic alloy according to the present invention when the film thickness is 2 μm.
本発明になる磁性合金は透磁率か３００ｏと高く、磁気
ヘッドとして十分な再生効率か得られることが解る。It can be seen that the magnetic alloy according to the present invention has a high magnetic permeability of 300° and can obtain sufficient reproduction efficiency as a magnetic head.
表 ２
表２はＴｉ、Ｃｒ等の元素が耐蝕性の向上に寄与するこ
とを示したものである。Table 2 Table 2 shows that elements such as Ti and Cr contribute to improving corrosion resistance.
実験は試料を６０°Ｃ−９０％の恒温恒産中に放置し１
０００時間経過後に腐蝕痕が見られないものを０１腐蝕
痕が生じたものを×として耐蝕性を示した。The experiment was carried out by leaving the sample in a constant temperature chamber at 60°C - 90%.
Corrosion resistance was expressed as 01 for those with no corrosion marks after 000 hours, and 01 for those with corrosion marks.
試料番号２ｔは比較例であるＦｅＮ合金、試料番号２２
はＦ ｅ−Ｎ−Ａ ｌ−３ｉ合金、試料番号２３〜４５
はＦｅ−Ｎ−Ａｌ−Ｓｉ合金にＴｉ、、Ｃ「等の元素を
添加した合金であり、試料番号２２〜４５が本発明にな
る磁性合金である。ここて、Ｔｉ、Ｃｒ等の合計の含有
量が０．３原子％未満であると、耐蝕性に対する顕著な
効果が見られず、１０原子％を越えると１５ｋＧ以上の
Ｂｓが得られなくなる。従って、Ｔｉ、Ｖ、Ｃｒ、Ｃｏ
、Ｎｉ、Ｃｕ、Ｙ、Ｚｒ、Ｎｂ、Ｍｏ、Ｒｕ、Ｒｈ、Ｐ
ｄ、Ａ、ｇ、Ｓｂ。Sample number 2t is a comparative example of FeN alloy, sample number 22
is Fe-N-A l-3i alloy, sample number 23-45
is an alloy in which elements such as Ti and C are added to a Fe-N-Al-Si alloy, and sample numbers 22 to 45 are magnetic alloys of the present invention.Here, the total amount of Ti, Cr, etc. If the content is less than 0.3 at%, no significant effect on corrosion resistance will be observed, and if it exceeds 10 at%, Bs of 15 kG or more cannot be obtained. Therefore, Ti, V, Cr, Co
, Ni, Cu, Y, Zr, Nb, Mo, Ru, Rh, P
d, A, g, Sb.
Ｈｆ、Ｔａ、Ｗ、Ｒｅ、Ｏｓ、Ｉ ｒ、Ｐｔ、ＡＵの合
計の含有量が０，３〜１０原子％である時、磁気特性と
耐蝕性に優れた磁性合金が得られる。When the total content of Hf, Ta, W, Re, Os, Ir, Pt, and AU is 0.3 to 10 at%, a magnetic alloy with excellent magnetic properties and corrosion resistance can be obtained.
（発明の効果）
本発明は、以上のような組成の磁性６合金とすることに
より、高飽和磁束密度を有し、保磁力が小さく、透磁率
が大きく、更に熱安定性上耐蝕性に優れた磁気ヘッド等
の磁気デバイス用磁性合金が得られる。従って、本発明
の磁性合金を用いれば、高保磁力媒体への良好な記録再
生が行える他、高性能の薄膜磁気ヘッド等を作成するこ
とができ、高密度磁気記録再生が実現できる。(Effects of the Invention) The present invention has a magnetic 6 alloy with the above composition, which has high saturation magnetic flux density, low coercive force, high magnetic permeability, and has excellent thermal stability and corrosion resistance. A magnetic alloy for magnetic devices such as magnetic heads is obtained. Therefore, by using the magnetic alloy of the present invention, it is possible to perform good recording and reproducing on a high coercive force medium, and also to create a high-performance thin film magnetic head and the like, and realize high-density magnetic recording and reproducing.
第１図は、本発明になる磁性合金を製造する装置の一実
施例であるスパッタ装置の概略図、第２図は熱処理温度
によるＨｅの変化を表す図、第３図は透磁率μと周波数
の関係を示す図、第４図は窒素含有量と飽和磁束密度の
関係（Ｂｓ）を示す図である。Fig. 1 is a schematic diagram of a sputtering apparatus which is an embodiment of the apparatus for manufacturing the magnetic alloy according to the present invention, Fig. 2 is a diagram showing changes in He depending on heat treatment temperature, and Fig. 3 is a diagram showing magnetic permeability μ and frequency. FIG. 4 is a diagram showing the relationship (Bs) between nitrogen content and saturation magnetic flux density.
Claims (1)
、ｖ、ｗ、ｘ、ｙで示される原子％が １≦ｗ≦１０ ０＜ｘ＜１０ ０＜ｙ＜１０ ０．５≦ｘ＋ｙ≦１０ ｖ＋ｗ＋ｘ＋ｙ＝１００ なる関係を有する磁性合金。（但しＭは周期律表IIIｂ
族の中の少なくとも１種類以上の元素であり、Ｋは周期
律表IVｂ族の中の少なくとも１種類以上の元素である） （２）Ｆｅ＿ｖＮ＿ｗＭ＿ｘＫ＿ｙＬ＿ｚなる組成式で
表され、ｖ、ｗ、ｘ、ｙ、ｚで示される原子％が１≦ｗ
≦１０ ０＜ｘ＜１０ ０＜ｙ＜１０ ０．５≦ｘ＋ｙ≦１０ ０．３≦ｚ≦１０ ｖ＋ｗ＋ｘ＋ｙ＋ｚ＝１００ なる関係を有する磁性合金。（但しＭは周期律表IIIｂ
族の中の少なくとも１種類以上の元素、Ｋは周期律表I
Vｂ族の中の少なくとも１種類以上の元素であり、Ｌは
Ｔｉ，Ｖ，Ｃｒ，Ｃｏ，Ｎｉ，Ｃｕ，Ｙ，Ｚｒ，Ｎｂ，
Ｍｏ，Ｒｕ，Ｒｈ，Ｐｄ，Ａｇ，Ｓｂ，Ｈｆ，Ｔａ，Ｗ
，Ｒｅ，Ｏｓ，Ｉｒ，Ｐｔ，Ａｕなる群の中から選ばれ
た少なくとも１種類以上の元素である）[Claims] (1) Represented by the compositional formula Fe_vN_wM_xK_y, where the atomic % represented by v, w, x, and y is 1≦w≦10 0<x<10 0<y<10 0.5≦x+y A magnetic alloy having the following relationship: ≦10 v+w+x+y=100. (However, M is periodic table IIIb
(2) Fe_vN_wM_xK_yL_z, where v, w, x, y , atomic % indicated by z is 1≦w
A magnetic alloy having the following relationships: ≦10 0<x<10 0<y<10 0.5≦x+y≦10 0.3≦z≦10 v+w+x+y+z=100. (However, M is periodic table IIIb
At least one element in the group K is Periodic Table I
At least one element in the Vb group, L is Ti, V, Cr, Co, Ni, Cu, Y, Zr, Nb,
Mo, Ru, Rh, Pd, Ag, Sb, Hf, Ta, W
, Re, Os, Ir, Pt, and Au)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2037822A JPH03240209A (en) | 1990-02-19 | 1990-02-19 | Magnetic alloy |
| US07/598,515 US5154983A (en) | 1989-10-18 | 1990-10-16 | Magnetic alloy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2037822A JPH03240209A (en) | 1990-02-19 | 1990-02-19 | Magnetic alloy |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03240209A true JPH03240209A (en) | 1991-10-25 |
Family
ID=12508214
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2037822A Pending JPH03240209A (en) | 1989-10-18 | 1990-02-19 | Magnetic alloy |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03240209A (en) |
-
1990
- 1990-02-19 JP JP2037822A patent/JPH03240209A/en active Pending
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