JPH03242545A - Moisture sensor - Google Patents
Moisture sensorInfo
- Publication number
- JPH03242545A JPH03242545A JP3875690A JP3875690A JPH03242545A JP H03242545 A JPH03242545 A JP H03242545A JP 3875690 A JP3875690 A JP 3875690A JP 3875690 A JP3875690 A JP 3875690A JP H03242545 A JPH03242545 A JP H03242545A
- Authority
- JP
- Japan
- Prior art keywords
- humidity
- oxide particles
- silver oxide
- humidity sensor
- dispersed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000002245 particle Substances 0.000 claims description 10
- 229910001923 silver oxide Inorganic materials 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000003756 stirring Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910018879 Pt—Pd Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000026041 response to humidity Effects 0.000 description 1
- 230000006903 response to temperature Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明は、温度に対応して素子の電気的特性が変化する
ことにより湿度を検出する湿度センサに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a humidity sensor that detects humidity by changing the electrical characteristics of an element in response to temperature.
［従来の技術］
近年、湿度計測、湿度制御を必要とする分野が増加し、
湿度センサの重要性が認められるようになった。[Conventional technology] In recent years, the number of fields requiring humidity measurement and humidity control has increased.
The importance of humidity sensors is now recognized.
湿度に対応して素子の電気的特性が変化することにより
湿度を検出する湿度センサには、電解質系、金属系、高
分子系、セラミックス系等があり、それぞれいろいろな
系が研究されているが、現在実用化されているものは、
高分子系およびセラミックス系の温度センサである。い
ずれも、素子に対する水の吸脱着により、素子の抵抗値
または静電容量が変化する性質を利用したものである。Humidity sensors that detect humidity by changing the electrical characteristics of the element in response to humidity include electrolyte-based, metal-based, polymer-based, ceramic-based, etc., and various systems are being researched. , those currently in practical use are:
These are polymer-based and ceramic-based temperature sensors. All of these utilize the property that the resistance value or capacitance of the element changes due to adsorption and desorption of water to the element.
［発明が解決しようとする課題］
しかし、従来の湿度センサは、抵抗値が高いため、精度
の良い湿度計を製造するためには、高度な回路技術およ
び実装技術を必要とした。[Problems to be Solved by the Invention] However, since conventional humidity sensors have a high resistance value, advanced circuit technology and packaging technology are required in order to manufacture a highly accurate hygrometer.
そこで本発明はこのような問題点を解決するもので、そ
の目的とするところは、抵抗値の低い湿度センサを提供
するところにある。The present invention is intended to solve these problems, and its purpose is to provide a humidity sensor with a low resistance value.
［課題を解決するための手段］
本発明の湿度センサは、酸化銀粒子を分散させたシリカ
膜を感湿膜として用いることを特徴とする特
シリカ膜に酸化銀粒子を分散させることにより、抵抗値
の低い湿度センサを得ることができる。[Means for Solving the Problems] The humidity sensor of the present invention is characterized in that a silica film in which silver oxide particles are dispersed is used as a moisture-sensitive film.By dispersing silver oxide particles in a special silica film, the resistance can be increased. A humidity sensor with a low value can be obtained.
２図より、本発明の温度センサは、抵抗値が低く、使い
やすいことがわかる。From FIG. 2, it can be seen that the temperature sensor of the present invention has a low resistance value and is easy to use.
［実施例］
テトラエトキシシラン（Ｓｉ（○Ｃ２Ｈ３）Ｊ） ５０
ｍｌにエタノール２５ｍ１，０．０２Ｎ塩酸４ｍｌを加
え、１時間攪拌することによりテトラエトキシシランを
加水分解した後、グリセリン１０ｍ１、微粉末シリカ１
３．５ｇを加え、３０分間攪拌し、さらに酸化銀粒子２
３ｇを加え、３０分間攪拌することにより、酸化銀粒子
を分散させたシリカゾルを作製した。Ｐｔ−Ｐｄ櫛形電
極をスクリーン印刷により形成したアルミナ基板上に、
このゾルをデイツプコーティングし、１００°Ｃで１０
分間乾燥し、４５０°Ｃで３０分間焼結し、酸化銀粒子
を分散させたシリカ膜を形成した。[Example] Tetraethoxysilane (Si(○C2H3)J) 50
After hydrolyzing tetraethoxysilane by adding 25 ml of ethanol and 4 ml of 0.02N hydrochloric acid to 1 ml of ethanol and stirring for 1 hour, 10 ml of glycerin and 1 ml of finely powdered silica were added.
Add 3.5g of silver oxide particles, stir for 30 minutes, and add silver oxide particles 2
By adding 3 g and stirring for 30 minutes, a silica sol in which silver oxide particles were dispersed was prepared. On an alumina substrate on which Pt-Pd comb-shaped electrodes were formed by screen printing,
This sol was dip coated and heated at 100°C for 10
It was dried for 1 minute and sintered at 450°C for 30 minutes to form a silica film in which silver oxide particles were dispersed.
このようにして製作した湿度センサの斜視図を第１図に
示す。第１図において、１は基板、２は電極、３は酸化
銀粒子を分散させたシリカ膜である。本湿度センサの感
湿特性を第２図に示す。第［発明の効果］
以上述べたように本発明の湿度センサは、酸化銀粒子を
分散させたシリカ膜を感湿膜として用いるので、抵抗値
が低いため、高度な回路技術および実装技術は必要なく
、使いやすい。したがって、底コスト、高精度な湿度セ
ンサとして、湿度計測、湿度制御を必要とする分野に広
く応用することができる。A perspective view of the humidity sensor manufactured in this manner is shown in FIG. In FIG. 1, 1 is a substrate, 2 is an electrode, and 3 is a silica film in which silver oxide particles are dispersed. Figure 2 shows the humidity sensitivity characteristics of this humidity sensor. [Effects of the Invention] As described above, the humidity sensor of the present invention uses a silica film in which silver oxide particles are dispersed as a humidity sensitive film, so the resistance value is low, so advanced circuit technology and mounting technology are not required. Easy to use. Therefore, it can be widely applied as a low-cost, high-precision humidity sensor to fields requiring humidity measurement and humidity control.
第１図は本発明の湿度センサの斜視図。
１・・・基板
２・・・電極
３・・・酸化銀粒子を分散させたシリカ膜第２図は、本
発明の温度センサの感湿特性図。
以上FIG. 1 is a perspective view of the humidity sensor of the present invention. 1...Substrate 2...Electrode 3...Silica film in which silver oxide particles are dispersed FIG. 2 is a moisture sensitivity characteristic diagram of the temperature sensor of the present invention. that's all
Claims (1)
ことを特徴とする湿度センサ。A humidity sensor characterized by using a silica film in which silver oxide particles are dispersed as a moisture-sensitive film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3875690A JPH03242545A (en) | 1990-02-20 | 1990-02-20 | Moisture sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3875690A JPH03242545A (en) | 1990-02-20 | 1990-02-20 | Moisture sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03242545A true JPH03242545A (en) | 1991-10-29 |
Family
ID=12534135
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3875690A Pending JPH03242545A (en) | 1990-02-20 | 1990-02-20 | Moisture sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03242545A (en) |
-
1990
- 1990-02-20 JP JP3875690A patent/JPH03242545A/en active Pending
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