JPH0324718A - Semiconductor manufacturing equipment - Google Patents

Abstract

PURPOSE:To obtain a uniform film thickness distribution by constituting the section of a rod relatively in a streamline shape along the travelling direction of a susceptor, and preventing the disturbance of epitaxial growth reaction gas. CONSTITUTION:The section of a rod 26 retaining a susceptor 24 is constituted relatively in a streamline shape along the travelling direction of the susceptor 24, thereby preventing the disturbance of growth reaction gas. That is, by constituting the section of the rod 26 in a streamline shape with respect to the rotating direction of the susceptor 24, a boundary layer formed on the surface of the rod 26 is not exfoliated when the rod is arranged in the gas flow. As a result, an eddy does not occur, the gas enters smoothly the inside between the susceptors 24 and is discharged, so that the film grows averagely. Thereby the film thickness distribution is improved, and the yield of epitaxial CVD growth can be improved.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to semiconductor manufacturing equipment, particularly vertical batch type shrimp/CV.
D Regarding the structure of the device.

3. Detailed Description of the Invention (Summary) Regarding the structure of semiconductor manufacturing equipment, especially vertical batch type shrimp/C■D equipment, in shrimp/CVD equipment, the gas flow of the reaction gas is prevented from being disturbed, and a uniform film thickness distribution is achieved. [Prior Art] In recent years, larger diameters have been required for LSI wafer processes. For this purpose, for example, to epitaxially deposit silicon on wafers larger than 8 inches (approximately 20 cm), a vertical batch-type epitaxial chemical vapor deposition (CD) system (CVD system) is used as semiconductor manufacturing equipment. However, in order to obtain an average film thickness distribution of, for example, silicon on a wafer, the wafer itself is rotated.

Fig. 4 shows the configuration of a conventional vertical batch type shrimp/CVD apparatus. ), l4 is a carbon susceptor, 15
is a sample (wafer) placed on the susceptor 14 on which silicon will be grown; l6 is a carbon rod that supports the susceptor l4; 17 is a motor; 18 is a motor that supports the rod 16; With the Rondo support being rotated, the reaction gas 19 is introduced in the direction of arrow 1 and supplied into the chamber 11 from the opening 12a of the gas introduction pipe l2, and then sucked in from the opening 13a of the exhaust pipe l3. It is exhausted in the direction of arrow P. Same figure (b)
1 is a plan view of the susceptor l4 on which the wafer 15 is placed, the susceptor 14 rotates in the direction of the arrow (■), and the reaction gas is supplied in the direction of the arrow (■) and exhausted in the direction of the arrow (■). The cross section of the rod 16 is circular as shown in FIG. 2(c).

For example, to form a silicon (Si) thin film on the wafer 15, a (Sitl4+ Hz) gas is used as the reaction gas,
5 is caused to occur, and Si is epitaxially grown on the wafer 15.

[Problem to be solved by the invention]

Rondo 1 supporting the susceptor 14 of the conventional device described above
The cross-sectional shape of No. 6 was circular as shown in FIG. 4(c). When the susceptor 14 rotates and the rod 16 rotates accordingly and passes in front of the gas flow shown by the arrow ■, it disturbs the gas flow, and as a result, the part of the wafer near the rod 16, that is, the part of the wafer in FIG. It was confirmed that the silicon film thickness in the shown area is thinner than in other areas.

SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a means for preventing the gas flow of a reaction gas from being disturbed and obtaining a uniform film thickness distribution in a shrimp CVD apparatus.

[Means to solve the problem]

The above problem was solved by supporting the susceptor using a vertical batch type epitaxial, chemical vapor deposition apparatus in which a sample is placed on a susceptor, and the susceptor is rotated to epitaxially precipitate a desired substance onto the sample. This problem is solved by a semiconductor manufacturing apparatus configured to make the cross-sectional shape of the susceptor relatively streamlined in the direction of movement of the susceptor to prevent disturbance of the epitaxial growth reaction gas.

[Operation] FIG. 2 is a diagram for explaining the principle of the present invention, and in the figure, 26 indicates a rod according to the present invention. The cross-sectional shape of this rod 26 is streamlined so as not to disturb the gas flow in the direction of rotation of the susceptor 24 shown by the arrow (■). Since the boundary layer formed on the surface of the susceptor 24 does not peel off, and therefore no vortex is generated, the resistance becomes extremely small, so there is no disturbance of the gas flow observed in the conventional example, and the gas flow is smooth between the susceptors 24. As it enters and is evacuated, the membrane is lengthened on average.

〔Example〕

Hereinafter, the present invention will be specifically explained with reference to illustrated embodiments.

FIG. 1 is a structural diagram of an embodiment of the present invention. In the figure, the same parts as those shown in FIG. Similarly, it is made of carbon, and 2o is a spacer. This spacer 20 is also made of carbon and has a hole 20a corresponding to the cross-sectional shape of the iron 26. and,
A hole 24a corresponding to the cross-sectional shape of the rod 26 is formed in the susceptor 24.

In assembling the susceptor 24, the rod 26 is inserted into a rod support 28 having a hole 28a similar to the cross-sectional shape of the rod 26. Next, a spacer 20 having a streamlined cross-sectional shape and a hole 20a similar to the cross-section of the rod 26 is inserted into the rod 26, and the susceptor 24 is inserted from above. In the same manner, the spacers 20 and susceptors 24 are inserted alternately to attach a predetermined number of susceptors.

FIG. 3 shows a semiconductor manufacturing apparatus according to the present invention.

This is a configuration diagram of an RF induction heating epitaxial device.
31 is an RF coil for induction heating. Using this device,
Sill. to the reaction gas. +lh was used to deposit silicon on the wafer. In the conventional device, the film thickness distribution was ±10% in silicon epitaxial growth using the same reaction gas, but using the device shown in Figure 3, the film thickness distribution was improved to ±5%. Ta.

〔Effect of the invention〕

As described above, according to the present invention, the wafer film thickness near the rod of the shrimp/CVD apparatus, which was thinner than other parts, has been improved to the above-mentioned film thickness distribution, and the thickness of the wafer near the rod of the shrimp/CVD apparatus has been improved. Yield has been improved.

[Brief explanation of drawings]

Fig. 1 is a block diagram of an embodiment of the present invention, Fig. 2 is a diagram showing the principle of the present invention, Fig. 3 is a block diagram of an RF induction heating type epitaxial device according to the present invention, and Fig. 4 is a structure of a conventional example. In the figure, (a) is a front view, (b)
) is a plan view of the susceptor, (C) is a sectional view of the rond, and
The figure is a plan view of the wafer and susceptor showing the problems of the conventional method. In the figure, 11 is a chamber 12 is a gas introduction pipe, 12a is an opening, 13 is a gas exhaust pipe, 13a is an opening, 14 and 24 are susceptors, 15 is a wafer (sample), 16 and 26 are ronds, 17 is a motor , 18 and 28 are Rondo support stands, 19 is a reaction gas, 20 is a spacer, 20a, 24a, and 28a are holes, and 31 is an RF coil for induction heating.

Claims (1)

[Claims] Vertical batch type epitaxial chemistry in which a sample (15) is placed on a susceptor (24) and the susceptor (24) is rotated to epitaxially grow a desired substance on the sample (15). A semiconductor device in which the vapor phase growth apparatus has a structure in which the cross-sectional shape of a rod (26) supporting a susceptor (24) is made relatively streamlined in the direction of movement of the susceptor (24) to prevent disturbance of epitaxial growth reaction gas. Manufacturing equipment.