JPH032644U - - Google Patents
Info
- Publication number
- JPH032644U JPH032644U JP6266289U JP6266289U JPH032644U JP H032644 U JPH032644 U JP H032644U JP 6266289 U JP6266289 U JP 6266289U JP 6266289 U JP6266289 U JP 6266289U JP H032644 U JPH032644 U JP H032644U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- prober
- tester
- diagram
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000010521 absorption reaction Methods 0.000 claims description 2
- 230000001052 transient effect Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
第1図は、この考案の実施例の半導体測定装置
の一部回路図、第2図は、本実施例の半導体素子
にかかる時間による電圧変化図、第3図は、従来
の半導体ウエーハの一部拡大図を含む平面図、第
4図は、半導体素子の特性測定時の状態を示す一
部断面平面図、第5図は、従来の半導体素子にか
かる時間による電圧変化図である。
1……半導体素子、2……半導体ウエーハ、3
……可動ステージ、4……ニードル、5……導線
、6……プローバ、7……テスタ、8……過渡電
圧吸収回路、9……抵抗、10……コンデンサ。
FIG. 1 is a partial circuit diagram of a semiconductor measuring device according to an embodiment of this invention, FIG. 2 is a diagram of voltage changes over time applied to a semiconductor element of this embodiment, and FIG. 3 is a diagram of a conventional semiconductor wafer. FIG. 4 is a plan view including a partially enlarged view, FIG. 4 is a partially sectional plan view showing the state of the semiconductor element during characteristic measurement, and FIG. 5 is a diagram of voltage change over time in a conventional semiconductor element. 1...Semiconductor element, 2...Semiconductor wafer, 3
...Movable stage, 4...Needle, 5...Conducting wire, 6...Prober, 7...Tester, 8...Transient voltage absorption circuit, 9...Resistor, 10...Capacitor.
Claims (1)
、一対のニールドとテスタ間に過渡電圧吸収回路
を介装したことを、特徴とする半導体特性測定装
置。 A semiconductor characteristic measuring device, characterized in that, in a prober for measuring characteristics of semiconductor wafers, a transient voltage absorption circuit is interposed between a pair of needles and a tester.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6266289U JPH032644U (en) | 1989-05-30 | 1989-05-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6266289U JPH032644U (en) | 1989-05-30 | 1989-05-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH032644U true JPH032644U (en) | 1991-01-11 |
Family
ID=31592018
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6266289U Pending JPH032644U (en) | 1989-05-30 | 1989-05-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH032644U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6037135U (en) * | 1983-08-22 | 1985-03-14 | 株式会社東海理化電機製作所 | rotary switch |
-
1989
- 1989-05-30 JP JP6266289U patent/JPH032644U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6037135U (en) * | 1983-08-22 | 1985-03-14 | 株式会社東海理化電機製作所 | rotary switch |
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