JPH03269846A - Method for manufacturing a stamper for optical disc duplication - Google Patents
Method for manufacturing a stamper for optical disc duplicationInfo
- Publication number
- JPH03269846A JPH03269846A JP6929190A JP6929190A JPH03269846A JP H03269846 A JPH03269846 A JP H03269846A JP 6929190 A JP6929190 A JP 6929190A JP 6929190 A JP6929190 A JP 6929190A JP H03269846 A JPH03269846 A JP H03269846A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- mother
- film
- master
- stamper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Manufacturing Optical Record Carriers (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は、レーザーディスク、コンパクトディスク等の
光ディスク複製用スタンパの製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a stamper for duplicating optical discs such as laser discs and compact discs.
[従来の技術]
従来、光ディスク複製用スタンパの製造においては、マ
スターまたはマザーを剥離皮膜処理後、Niめっきして
マスターまたはマザーより剥離してマザーまたはサンを
得ていた。しかし、この方法では、めっき液中に含まれ
ている不純物が放電して析出するため、マザーまたはサ
ンの表面に欠陥が生じていた。この問題を解決する方法
として、特開昭60−197959号公報に記載のマス
ターまたはマザーを剥離皮膜処理後、剥離皮膜処理面に
真空蒸着法やスパッタリングによるNiの接触転写層を
形成する方法が提案されている。[Prior Art] Conventionally, in the production of a stamper for optical disk duplication, a master or mother was subjected to a release film treatment, Ni-plated, and then peeled from the master or mother to obtain a mother or a son. However, in this method, impurities contained in the plating solution are discharged and precipitated, resulting in defects on the surface of the mother or sun. As a method to solve this problem, a method described in JP-A-60-197959 has been proposed in which after treating a master or mother with a release film, a contact transfer layer of Ni is formed on the release film-treated surface by vacuum evaporation or sputtering. has been done.
[課題を解決するための手段]
ところが、第3図に示すように剥離皮膜処理後のマスタ
ー7の最表面は活性状態のNi水酸化物層であるため、
その上にスパッタリングして接触転写層9を形成し、通
常のNiめっき(浴温50℃)を行うと、浴温が高いた
め活性状態のNi水酸化物層のOH基がガス化し、体積
膨張して接触転写層9が圧力を受けて孔11が発生する
。その結果、マスター7から剥離して得たマザー12の
表面には多数の凹み13が生じてスタンパの品質が著し
く低下するという問題があった。[Means for Solving the Problem] However, as shown in FIG. 3, the outermost surface of the master 7 after the release film treatment is an active Ni hydroxide layer;
When a contact transfer layer 9 is formed by sputtering on top of the contact transfer layer 9 and normal Ni plating is performed (bath temperature 50°C), the OH groups in the active Ni hydroxide layer gasify due to the high bath temperature, resulting in volumetric expansion. The contact transfer layer 9 is then subjected to pressure and holes 11 are generated. As a result, a large number of depressions 13 are formed on the surface of the mother 12 obtained by peeling from the master 7, resulting in a problem in that the quality of the stamper is significantly degraded.
さらに、めっき応力によりマザー12の外周の一部また
は全部が自然剥離するので、剥離している部分よりめっ
き液が浸入してマザー12の情報転写面にじみができ、
また裏打ちによる加圧でビットの先端がつぶれ形状転写
性が低下する等、スタンパの品質が著しく低下するとい
う問題もあった。Furthermore, because part or all of the outer circumference of the mother 12 naturally peels off due to plating stress, the plating solution infiltrates from the peeled part and causes bleeding on the information transfer surface of the mother 12.
In addition, there was a problem in that the quality of the stamper was significantly degraded, such as the tip of the bit being crushed by the pressure applied by the backing, resulting in poor shape transferability.
そしてこれらのことはマザーからサンを得る場合にも当
てはまる。And these things also apply to obtaining Sun from the Mother.
本発明は上記の点を解決しようとするもので、その目的
は、めっき応力による自然剥離を防止し、かつ表面に凹
みのない高品質のスタンパを製造することにある。The present invention aims to solve the above-mentioned problems, and its purpose is to prevent natural peeling due to plating stress and to manufacture a high-quality stamper with no dents on the surface.
[課題を解決するための手段]
本発明は、光ディスク複製用スタンパ製造工程のマスタ
ーからマザーを複製する際のめっき工程、またはマザー
からサンを複製する際のめっき工程において、マスター
またはマザーを剥離皮膜処理後、該剥離皮膜処理面にN
iスタッパ膜を形成し、その後、めっき浴の温度を変化
させてめっきし、該マスターまたはマザーから剥離して
マザーまたはサンを得ることを特徴とする光ディスク複
製用スタンパの製造方法に関する。[Means for Solving the Problems] The present invention provides a method for removing a master or mother with a peeling film in a plating process when replicating a mother from a master or a plating process when replicating a sun from a mother in the manufacturing process of a stamper for optical disc duplication. After treatment, N is added to the release coating treated surface.
The present invention relates to a method for manufacturing a stamper for optical disk duplication, which comprises forming an i-stapper film, then plating by changing the temperature of a plating bath, and peeling it off from the master or mother to obtain a mother or a son.
次に本発明を第1図(a)〜(f)に基づいて詳しく説
明する。Next, the present invention will be explained in detail based on FIGS. 1(a) to 1(f).
まず、リソグラフィー法により微細な凹凸形状を形成し
たガラス基板に導電性皮膜を付与しNiめっきを施して
形成されたNiマスター1を得る(第1図(a))、次
に、第1図(b)に示すようにこのNiマスター1の情
報転写面にNi酸化膜の剥離皮膜2を形成する。この剥
離皮膜2は後に複製されるマザーをマスター1から剥離
しやすくするためのもので、このとき、Niマスター1
の剥離皮膜2の最表面は活性状態のNi水酸化物層とな
る0次に、第1図(c)に示すように剥離皮膜2上にス
パッタリングによってNiスパッタ膜3を形成する。こ
れは次のめつき工程の際、めっき液中に含まれる不純物
が放電して剥離皮膜2上に析出し、後に得られるマザー
の表面に凹みが生じるのを防止するためのものである0
次に、第1図(d)に示すようにめっき浴の温度を低温
にしてNiめっきを行い初期めっき膜4を形成する。通
常のめっき浴の温度(50℃)でめっきすると剥離皮膜
2の再表面のNi水酸化物層のOH基がガス化し体積膨
張してNiスパッタ膜3に孔が発生するため、低温のめ
っき浴でめっきすることにより孔の発生を防止し、その
後に得られるマザー表面の凹みを防止する。また、めっ
き速度が遅いためNiスパッタ膜3に密着性良くめっき
され、めっき応力による自然剥離が防止できる。めっき
浴の温度としては、常温(20℃)前後が好ましい、常
温以下の場合には、めっき速度が遅く、めっきに時間が
かかりすぎて経済的に問題がある。First, a conductive film is applied to a glass substrate on which fine irregularities have been formed by lithography, and Ni plating is applied to obtain a Ni master 1 (see FIG. 1(a)). Next, as shown in FIG. As shown in b), a peeling film 2 of a Ni oxide film is formed on the information transfer surface of this Ni master 1. This peeling film 2 is intended to make it easier to peel off the mother to be replicated later from the master 1. At this time, the Ni master 1
The outermost surface of the release film 2 becomes an active Ni hydroxide layer.Next, as shown in FIG. 1(c), a Ni sputtered film 3 is formed on the release film 2 by sputtering. This is to prevent impurities contained in the plating solution from discharging and precipitating on the release film 2 during the next plating process, thereby preventing the formation of dents on the surface of the mother that will be obtained later.
Next, as shown in FIG. 1(d), the temperature of the plating bath is lowered to perform Ni plating to form an initial plating film 4. When plating at the normal plating bath temperature (50°C), the OH groups in the Ni hydroxide layer on the resurface of the release film 2 gasify and expand in volume, creating holes in the Ni sputtered film 3. This plating prevents the formation of pores and prevents the mother surface from becoming dented afterwards. Furthermore, since the plating speed is slow, the Ni sputtered film 3 is plated with good adhesion, and natural peeling due to plating stress can be prevented. The temperature of the plating bath is preferably around room temperature (20° C.); if it is below room temperature, the plating speed is slow and plating takes too much time, which is economically problematic.
また、低温での初期めっき膜4の膜厚としては、5〜1
00μmが好ましい、膜厚が5μm未満の場合には、活
性状態のNi水酸化物層のO)1基の体積膨張による凹
みの発生防止には不充分であり、またNiスパッタ膜3
に密着性良くめっきするには薄いので初期めっき膜4と
その後のめっき膜5で剥離が発生する。膜厚が100μ
■を越える場合には、めっきに時間がかかり経済的に問
題がある。Further, the thickness of the initial plating film 4 at low temperature is 5 to 1
00 μm is preferable. If the film thickness is less than 5 μm, it is insufficient to prevent the occurrence of depressions due to the volume expansion of the O) group of the Ni hydroxide layer in the active state, and the Ni sputtered film 3
Since the plating film is too thin to be plated with good adhesion, peeling occurs between the initial plating film 4 and the subsequent plating film 5. Film thickness is 100μ
If it exceeds (2), plating takes a long time and is economically problematic.
なお、低温でのめっき時には剥離皮膜2の最表面の活性
状態のNi水酸化物層のOH基は不活性化される。Note that during plating at a low temperature, the OH groups of the activated Ni hydroxide layer on the outermost surface of the release film 2 are inactivated.
次に、第1図(e)に示すようにめっき浴の温度を上げ
てめっきし、めっき膜5を形成する。この時のめっき浴
の温度は通常の温度で良く、剥離皮膜2の最表面の活性
状態のNi水酸化物層は不活性化されているので、温度
を上げてめっきしても孔の発生は起こらない。Next, as shown in FIG. 1(e), plating is performed by raising the temperature of the plating bath to form a plating film 5. The temperature of the plating bath at this time may be a normal temperature, and since the activated Ni hydroxide layer on the outermost surface of the release film 2 has been inactivated, no pores will be generated even if the plating temperature is increased. It doesn't happen.
このようにして2段階にわたるめっき後、第1図(f)
に示すようにNiマスター1から剥離することによって
Niマザー6を得る。同様の方法でNiマザーからNi
サンを得ることができる。After two stages of plating in this way, Fig. 1(f)
A Ni mother 6 is obtained by peeling from the Ni master 1 as shown in FIG. In the same way, Ni mother to Ni
You can get sun.
本発明のめっき工程においては、Niマザーの表面には
凹みなく、まためっき膜の密着性が良いため、めっき応
力によるNiマザーの外周部の自然剥離も起こらないの
で高品質の光ディスク複製用スタンパの製造を可能にす
る。In the plating process of the present invention, there are no dents on the surface of the Ni mother, and the adhesion of the plating film is good, so natural peeling of the outer periphery of the Ni mother due to plating stress does not occur, resulting in a high quality stamper for optical disc duplication. enable manufacturing.
[実施例J 次に実施例および比較例を挙げて本発明を説明する。[Example J Next, the present invention will be explained with reference to Examples and Comparative Examples.
実施例1
ガラス基板に形成したプリグループパターン上に導体化
膜を形成した後、該導体化膜を陰極としてNiめっきを
行い、裏打ちしてマスターを得た。Example 1 After forming a conductive film on a pre-group pattern formed on a glass substrate, Ni plating was performed using the conductive film as a cathode, and a master was obtained by backing.
該マスターを剥離皮膜処理後、スパッタリングでNiス
パッタ膜を形成した0次にめっき浴の温度を常温(20
℃)としてめっきし、膜厚5μ厘のNLめっき膜を形成
後、めっき浴の温度を50℃としてめっきした。めっき
終了後、マスターから剥離してマザーを得た。さらにこ
のマザーから同様にしてサンを得た。After treating the master with a peeling film, the temperature of the zero-order plating bath in which a Ni sputtered film was formed by sputtering was set to room temperature (20°C).
After forming a NL plating film with a thickness of 5 μm, plating was performed at a plating bath temperature of 50° C. After plating was completed, the mother was obtained by peeling it off from the master. Furthermore, from this mother I obtained Sun in the same way.
実施例2
実施例1と同様にしてマスターを得、剥離皮膜処理後、
Niスパッタ膜を形成した1次に、めっき浴の温度を常
温としてめっきし、膜厚50μ謳のNiめっき膜を形成
後、めっき浴の温度を50℃としてめっきした。めっき
終了後、マスターから剥離してマザーを得た。さらにこ
のマザーから同様にしてサンを得た。Example 2 A master was obtained in the same manner as in Example 1, and after treatment with a release film,
After forming the Ni sputtered film, plating was carried out with the plating bath at room temperature. After forming a Ni plating film with a thickness of 50 μm, plating was carried out at the plating bath temperature at 50° C. After plating was completed, the mother was obtained by peeling it off from the master. Furthermore, from this mother I obtained Sun in the same way.
比較例
実施例1と同様にしてマスターを得、剥離皮膜処理後、
Niスパッタ膜を形成した。次に、めっき浴の温度を5
0℃としてめっきした。めっき終了後、マスターから剥
離してマザーを得た。さらにこのマザーから同様にして
サンを得た。Comparative Example A master was obtained in the same manner as in Example 1, and after treatment with a release film,
A Ni sputtered film was formed. Next, increase the temperature of the plating bath to 5
Plating was carried out at 0°C. After plating was completed, the mother was obtained by peeling it off from the master. Furthermore, from this mother I obtained Sun in the same way.
但し、めっき浴の組成は、スルファミン酸Ni450
g/n 、ホウ酸30g/I2.界面活性剤0.1g/
I2゜比重28Be’ 、電流密度8 A/d+o”で
あった。However, the composition of the plating bath is Ni450 sulfamate.
g/n, boric acid 30 g/I2. Surfactant 0.1g/
The I2° specific gravity was 28Be', and the current density was 8 A/d+o''.
実施例1.2および比較例でそれぞれ得られたマスター
、マザーおよびサンの欠陥率を第2図に示す。FIG. 2 shows the defect rates of the master, mother, and sun obtained in Example 1.2 and Comparative Example, respectively.
第2図より、実施例1.2で得られたマスター、マザー
およびサンの欠陥率は低く、複製による欠陥率の上昇は
全く見られなかったが、比較例で得られたマスター、マ
ザーおよびサンは複製によって明らかに欠陥率が上昇し
た。From Figure 2, the defect rates of the master, mother, and sun obtained in Example 1.2 were low, and no increase in the defect rate was observed due to replication, but the master, mother, and sun obtained in Comparative Example had low defect rates. The defect rate clearly increased with replication.
[発明の効果]
以上の説明で明らかなように本発明のめっき方法によれ
ば、めっき応力による自然剥離がなく、かつ表面に凹み
のない高品質の光ディスク複製用スタンパを製造するこ
とができる。[Effects of the Invention] As is clear from the above description, according to the plating method of the present invention, it is possible to produce a high-quality stamper for duplicating optical discs that is free from natural peeling due to plating stress and has no dents on its surface.
第1図(a)〜(f)は本発明の製造方法の工程を示す
断面図、第2図は実施例1,2および比較例でそれぞれ
得られたマスター、マザーおよびサンの欠陥率を示すグ
ラフ、第3図(a)〜(e)は従来の製造方法の工程を
示す断面図である。
1・・・Niマスター 2・・・剥離皮膜、3・・・
Niスパッタ膜、 4・・・初期めっき膜、5・・・め
っき膜、 6・・・Niマザー7・・・Niマスター
8・・・剥離皮膜、9・・・接触転写層、 lO・
・・めっき層、11・・・孔、 12・・・Niマザー
13・・・凹み第1図Figures 1 (a) to (f) are cross-sectional views showing the steps of the manufacturing method of the present invention, and Figure 2 shows the defect rates of master, mother, and sun obtained in Examples 1 and 2 and Comparative Example, respectively. The graphs and FIGS. 3(a) to 3(e) are cross-sectional views showing the steps of a conventional manufacturing method. 1...Ni master 2...Peeling film, 3...
Ni sputtered film, 4... Initial plating film, 5... Plating film, 6... Ni mother 7... Ni master 8... Peeling film, 9... Contact transfer layer, lO.
...Plating layer, 11...hole, 12...Ni mother 13...dent Figure 1
Claims (1)
ザーを複製する際のめっき工程、またはマザーからサン
を複製する際のめっき工程において、マスターまたはマ
ザーを剥離皮膜処理後、該剥離皮膜処理面にNiスタッ
パ膜を形成し、その後、めっき浴の温度を変化させてめ
っきし、該マスターまたはマザーから剥離してマザーま
たはサンを得ることを特徴とする光ディスク複製用スタ
ンパの製造方法。In the plating process when duplicating the mother from the master in the stamper manufacturing process for optical disk duplication, or the plating process when duplicating the sun from the mother, after the master or mother is treated with a release film, a Ni stopper film is applied to the surface treated with the release film. 1. A method for producing a stamper for duplicating an optical disk, which comprises forming a stamper, then plating by changing the temperature of a plating bath, and peeling from the master or mother to obtain a mother or a sun.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6929190A JPH03269846A (en) | 1990-03-19 | 1990-03-19 | Method for manufacturing a stamper for optical disc duplication |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6929190A JPH03269846A (en) | 1990-03-19 | 1990-03-19 | Method for manufacturing a stamper for optical disc duplication |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03269846A true JPH03269846A (en) | 1991-12-02 |
Family
ID=13398337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6929190A Pending JPH03269846A (en) | 1990-03-19 | 1990-03-19 | Method for manufacturing a stamper for optical disc duplication |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03269846A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008254413A (en) * | 2007-03-12 | 2008-10-23 | Toshiba Corp | Duplicating stamper and manufacturing method thereof |
| WO2011114968A1 (en) * | 2010-03-19 | 2011-09-22 | 学校法人早稲田大学 | Mold manufacture method and mold formed by said method |
| JP2011194721A (en) * | 2010-03-19 | 2011-10-06 | Waseda Univ | Mold manufacturing apparatus |
-
1990
- 1990-03-19 JP JP6929190A patent/JPH03269846A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008254413A (en) * | 2007-03-12 | 2008-10-23 | Toshiba Corp | Duplicating stamper and manufacturing method thereof |
| WO2011114968A1 (en) * | 2010-03-19 | 2011-09-22 | 学校法人早稲田大学 | Mold manufacture method and mold formed by said method |
| JP2011194721A (en) * | 2010-03-19 | 2011-10-06 | Waseda Univ | Mold manufacturing apparatus |
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